JP3940124B2 - apparatus - Google Patents
apparatus Download PDFInfo
- Publication number
- JP3940124B2 JP3940124B2 JP2004003413A JP2004003413A JP3940124B2 JP 3940124 B2 JP3940124 B2 JP 3940124B2 JP 2004003413 A JP2004003413 A JP 2004003413A JP 2004003413 A JP2004003413 A JP 2004003413A JP 3940124 B2 JP3940124 B2 JP 3940124B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- silver
- gold
- alloy coating
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 38
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 36
- 229910052709 silver Inorganic materials 0.000 claims description 36
- 239000004332 silver Substances 0.000 claims description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 23
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 22
- 229910052763 palladium Inorganic materials 0.000 claims description 19
- 229910001020 Au alloy Inorganic materials 0.000 claims description 16
- 239000003353 gold alloy Substances 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 9
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 9
- 238000007747 plating Methods 0.000 description 60
- 239000010408 film Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001579 optical reflectometry Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- -1 electroplating Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Led Device Packages (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
本発明は、半導体装置用リードフレームに関し、特に、リードフレームの光反射率を向上させる技術に関する。 The present invention relates to a lead frame for a semiconductor device, and more particularly to a technique for improving the light reflectivity of a lead frame.
従来、半導体装置用リードフレームにおいて、良好な耐食性を得るために最表層に金−銀合金フラッシュめっき層を形成する技術が知られている（例えば、特許文献１を参照）
図６は、当該文献に記載されたリードフレームの構成を示す模式図である。リードフレーム９００は、リードフレーム素材９０１に、ニッケルめっき９０２、パラジウムめっき９０３、及び金−銀合金フラッシュめっき９０４がこの順に施されてなる。当該文献は、この構成のリードフレームが優れた耐食性を有することを、塩水噴霧試験の結果として示している。
FIG. 6 is a schematic diagram showing the configuration of the lead frame described in the document. In the
しかしながら、上記従来技術のリードフレームは、良好な耐食性を有するものの光反射率が小さいという問題がある。このため従来のリードフレームに、特に発光ダイオード等の発光素子を取り付けて発光装置を構成する場合に、発光素子の後方光をリードフレームで反射させることによって装置全体の発光効率を高めようとしても目的を達することが難しい。 However, the above-described lead frame of the prior art has a problem that the light reflectance is small although it has good corrosion resistance. Therefore, when a light-emitting device is configured by attaching a light-emitting element such as a light-emitting diode to a conventional lead frame, it is intended to improve the light-emitting efficiency of the entire device by reflecting the back light of the light-emitting element by the lead frame. Difficult to reach.
上記の問題を解決するために、本発明は、従来よりも高い光反射率を持つ半導体装置用のリードフレームの提供を目的とする。 In order to solve the above problem, an object of the present invention is to provide a lead frame for a semiconductor device having a higher light reflectivity than conventional ones.
上記問題を解決するため、本発明のリードフレームは、リードフレーム素材の上に複数層の金属被膜が形成されてなる半導体装置用リードフレームであって、前記半導体装置の外囲器に囲繞されることとなるインナー部を有し、前記インナー部の最表層に形成される金属被膜は銀又は銀合金被膜であることを特徴とする。
また、前記インナー部を除いた部分の最表層に形成される金属被膜は金又は金合金被膜であるとしてもよい。
In order to solve the above problems, a lead frame of the present invention is a lead frame for a semiconductor device in which a plurality of layers of metal films are formed on a lead frame material, and is surrounded by an envelope of the semiconductor device. The metal film formed on the outermost layer of the inner part is a silver or silver alloy film.
The metal film formed on the outermost layer except for the inner part may be a gold or gold alloy film.
また、前記銀又は銀合金被膜が０．１μｍ以上の厚さに形成されているとしてもよい。
また、前記インナー部の一部を囲繞して前記外囲器の台部が形成されているとしてもよい。
The silver or silver alloy film may be formed to a thickness of 0.1 μm or more.
Further, a part of the inner part may be surrounded to form a base part of the envelope.
この構成によれば、前記インナー部では銀又は銀合金被膜の特性である優れた光反射率とワイヤーボンディング性が発揮され、前記インナー部を除いた部分では金又は金合金被膜の特性である優れた耐食性とはんだ付け性が発揮される。
このリードフレームはインナー部において光反射率に優れるため、特に半導体発光装置に用いた場合に発光素子の後方光を効率よく反射して装置全体として高い発光効率を実現できる。
According to this configuration, excellent light reflectivity and wire bonding properties, which are the characteristics of silver or a silver alloy film, are exhibited in the inner part, and excellent characteristics of a gold or gold alloy film are provided in the part other than the inner part. Corrosion resistance and solderability are demonstrated.
Since this lead frame is excellent in light reflectivity in the inner part, particularly when used in a semiconductor light emitting device, the back light of the light emitting element can be efficiently reflected to achieve high light emission efficiency as a whole device.
また、前記リードフレームにおいて、前記金又は金合金被膜は前記リードフレームの略全面に形成され、前記銀又は銀合金被膜は前記インナー部においてのみ前記金又は金合金被膜の上に形成されているとしてもよい。
この構成によれば、銀又は銀合金被膜のみ部分選択的に形成し金又は金合金被膜は全面に形成すればよいので、前記リードフレームの製造工程を簡素化できる。
In the lead frame, the gold or gold alloy film is formed on substantially the entire surface of the lead frame, and the silver or silver alloy film is formed on the gold or gold alloy film only in the inner portion. Also good.
According to this configuration, since only the silver or silver alloy coating is selectively formed and the gold or gold alloy coating is formed on the entire surface, the manufacturing process of the lead frame can be simplified.
また、前記リードフレームにおいて、前記リードフレーム素材の上にニッケルまたはニッケル合金被膜、パラジウム又はパラジウム合金被膜、前記金又は金合金被膜、及び前記銀又は銀合金被膜がこの順に形成され、前記ニッケルまたはニッケル合金被膜、及び前記パラジウム又はパラジウム合金被膜は前記リードフレームの略全面に形成されているとしてもよい。 In the lead frame, the nickel or nickel alloy film, the palladium or palladium alloy film, the gold or gold alloy film, and the silver or silver alloy film are formed in this order on the lead frame material, and the nickel or nickel The alloy coating and the palladium or palladium alloy coating may be formed on substantially the entire surface of the lead frame.
この構成によれば、前述した効果に加えて、パラジウム被膜の高温安定性によって無鉛はんだによる高温はんだ付けに適したリードフレームが得られる。
また、前記リードフレームにおいて、前記銀又は銀合金被膜は前記リードフレームの略全面に形成され、前記金又は金合金被膜は前記リードフレームの前記インナー部を除いた部分においてのみ前記銀又は銀合金被膜の上に形成されている
としてもよい。
According to this configuration, in addition to the effects described above, a lead frame suitable for high-temperature soldering using lead-free solder can be obtained due to the high-temperature stability of the palladium coating.
In the lead frame, the silver or silver alloy film is formed on substantially the entire surface of the lead frame, and the gold or gold alloy film is formed only on a portion of the lead frame excluding the inner part. It may be formed on the top.
この構成によれば、金又は金合金被膜のみ部分選択的に形成し銀又は銀合金被膜は全面に形成すればよいので、前記リードフレームの製造工程を簡素化できる。
また、前記リードフレームにおいて、前記リードフレーム素材の上にニッケルまたはニッケル合金被膜、パラジウム又はパラジウム合金被膜、前記銀又は銀合金被膜及び、前記金又は金合金被膜がこの順に形成され、前記ニッケルまたはニッケル合金被膜、及び前記パラジウム又はパラジウム合金被膜は前記リードフレームの略全面において形成されているとしてもよい。
According to this configuration, only the gold or gold alloy film may be partially selectively formed, and the silver or silver alloy film may be formed on the entire surface, so that the lead frame manufacturing process can be simplified.
In the lead frame, the nickel or nickel alloy film, the palladium or palladium alloy film, the silver or silver alloy film, and the gold or gold alloy film are formed in this order on the lead frame material, and the nickel or nickel The alloy coating and the palladium or palladium alloy coating may be formed on substantially the entire surface of the lead frame.
この構成によれば、前述した効果に加えて、パラジウム被膜の高温安定性によって無鉛はんだによる高温はんだ付けに適したリードフレームが得られる。
また、前記リードフレームにおいて、前記銀又は銀合金被膜は、前記台部に囲繞される前記インナー部の少なくとも一部を除外して形成されているとしてもよい。
この構成によれば、銀又は銀合金被膜の形成が除外された部分において前記リードフレームと前記外囲器を形成する樹脂との密着性が高まるので、外囲器の密閉性を保ち、また前記インナー部における耐食性を向上する。
According to this configuration, in addition to the effects described above, a lead frame suitable for high-temperature soldering using lead-free solder can be obtained due to the high-temperature stability of the palladium coating.
In the lead frame, the silver or silver alloy coating film may be formed excluding at least a part of the inner part surrounded by the base part.
According to this configuration, since the adhesion between the lead frame and the resin forming the envelope is increased in the portion where the formation of the silver or silver alloy film is excluded, the hermeticity of the envelope is maintained, and the Improves corrosion resistance in the inner part.
また、前記リードフレームには半導体発光素子が載置され半導体発光装置を構成しているとしてもよい。
この構成によれば、前記半導体発光装置は、インナー部において光反射率に優れる前記リードフレームを用いて構成されるため、前記半導体発光素子の後方光を効率よく反射して装置全体として高い発光効率を発揮する。
Further, a semiconductor light emitting device may be configured by mounting a semiconductor light emitting element on the lead frame.
According to this configuration, since the semiconductor light emitting device is configured using the lead frame having excellent light reflectivity in the inner portion, the back light of the semiconductor light emitting element is efficiently reflected, and the entire device has high light emission efficiency. Demonstrate.
本発明の実施の形態について、図面を参照しながら詳細に説明する。
（リードフレームの形状）
図１は、本発明に係るリードフレームの形状例を示す平面図である。
リードフレーム１００は、リードフレーム素材を図に例示した形状にプレス加工またはエッチング加工した後、後述するめっきを施して作られる。リードフレーム素材は、例えば鉄合金、又は銅合金等の薄板である。
Embodiments of the present invention will be described in detail with reference to the drawings.
(Lead frame shape)
FIG. 1 is a plan view showing a shape example of a lead frame according to the present invention.
The
破線で示した領域には、リードフレームを囲繞しかつ半導体素子（とりわけ発光素子）を格納するための外囲器が設けられる。外囲器は、発光素子を設置するための凹部を有する台部と、発光素子の設置後当該凹部を封止する蓋部とからなる。
破線の内部、つまり半導体装置にパッケージングされたときに外囲器に囲繞されるリードフレーム部分をインナー部、外囲器から延出するリードフレーム部分をアウター部と呼ぶことにする。インナー部は少なくともインナーリードを含む。さらにインナーリードとは別個に設けられるか、又はインナーリードの一部分として設けられる素子載置部を含んでもよい。
（めっきの詳細）
図２は、リードフレーム１００に施されるめっきの詳細を示す模式図であり、図１のＡ−Ａ’断面を模式的に示している。
In the region indicated by the broken line, an envelope for enclosing the lead frame and storing a semiconductor element (in particular, a light emitting element) is provided. The envelope includes a base having a recess for installing the light emitting element, and a lid for sealing the recess after the light emitting element is installed.
The inside of the broken line, that is, the lead frame portion surrounded by the envelope when packaged in the semiconductor device is referred to as the inner portion, and the lead frame portion extending from the envelope is referred to as the outer portion. The inner part includes at least an inner lead. Furthermore, an element mounting portion provided separately from the inner lead or provided as a part of the inner lead may be included.
(Details of plating)
FIG. 2 is a schematic diagram showing details of plating applied to the
リードフレーム１００は、リードフレーム素材１０１に、ニッケルめっき１０２、パラジウムめっき１０３、及び金フラッシュめっき１０４がこの順に施され、さらにインナー部の一部分に銀めっき１０５が施されてなる。
それぞれのめっき厚は、例えばニッケルめっきが０．５から２．０μｍ、パラジウムめっきが０．００５から０．０７μｍ、金フラッシュめっきが０．００３から０．０１μｍ、及び銀めっきが０．１μｍ以上である。
In the
The plating thicknesses are 0.5 to 2.0 μm for nickel plating, 0.005 to 0.07 μm for palladium plating, 0.003 to 0.01 μm for gold flash plating, and 0.1 μm or more for silver plating, for example. is there.
なお、めっきされるこれらの金属はそれぞれ合金であってもよい。つまり、これらのめっきはそれぞれ、ニッケル合金めっき、パラジウム合金めっき、金合金めっき、及び銀合金めっきであってもよい。
めっき後、破線で示した領域に外囲器の台部がインサート形成される。台部は白色又は淡色の絶縁性樹脂からなり、例えばポリフタルアミドで作られる。台部は図に例示したような凹部を有し、凹部に設置される発光素子の光を紙面上方へ放出する。凹部には発光素子の設置後、封止用の透明樹脂（例えばエポキシ樹脂）が充填されることによって蓋部が設けられ、台部とともに外囲器となる。
Each of these metals to be plated may be an alloy. That is, these platings may be nickel alloy plating, palladium alloy plating, gold alloy plating, and silver alloy plating, respectively.
After plating, the base portion of the envelope is insert-formed in the area indicated by the broken line. The base portion is made of white or light-colored insulating resin, and is made of, for example, polyphthalamide. The base has a recess as illustrated in the figure, and emits light of a light emitting element installed in the recess upward in the drawing. After the light emitting element is installed in the concave portion, a lid portion is provided by being filled with a sealing transparent resin (for example, epoxy resin), and becomes an envelope together with the base portion.
図に見られるように銀めっきがインナー部の一部分のみに施され、台部と接する一部分からは除外されていることに注意する。
（リードフレームを用いた半導体装置）
図３は、台部２００が形成された後のリードフレーム１００の形状例を示す斜視図である。
Note that the silver plating is applied to only a part of the inner part as shown in the figure and is excluded from the part in contact with the base part.
(Semiconductor device using lead frame)
FIG. 3 is a perspective view showing an example of the shape of the
図４は、前記リードフレームを用いて構成された半導体発光装置７００の断面を示す模式図である。
半導体発光装置７００は、蓋部形成前、台部２００の凹部へ露出しているインナー部に半導体発光素子４００を載置し、ボンディングワイヤー５００で半導体発光素子４００とインナー部とを接続した後、透明樹脂３００を凹部に充填封止して蓋部を形成することによって構成される。
FIG. 4 is a schematic diagram showing a cross section of a semiconductor
In the semiconductor
半導体発光素子４００の光の一部分６０１は直接放出され、他の一部分６０２はインナー部及び台部２００で反射した後放出される。
発明者らは、上述した構成によるリードフレームが以下に説明する優れた特性を有していることを確認した。
（光反射率）
図５は、リードフレームの光反射率を比較するグラフであり、硫酸バリウムの光反射率を１００としたときの、試料１（発明品の銀めっき部）、試料２（参考比較品）、試料３（従来品）のそれぞれのリードフレームの光反射率比を、紫外可視分光光度計を用いて測定した結果を示している。
A
The inventors confirmed that the lead frame having the above-described configuration has excellent characteristics described below.
(Light reflectance)
FIG. 5 is a graph comparing the light reflectance of lead frames. Sample 1 (inventive silver-plated portion), sample 2 (reference comparative product), and sample when the light reflectance of barium sulfate is 100 3 shows the result of measuring the light reflectance ratio of each lead frame of No. 3 (conventional product) using an ultraviolet-visible spectrophotometer.
試料１の構成は前述したとおりである。
試料２は、銅合金薄板のリードフレーム素材に、銅ストライクめっき、及び銀めっき３μｍがこの順に施されてなる。銀単層めっきによって発明品の銀めっき部と略同等の光反射率が得られる試料として参考比較する。
試料３は従来技術のリードフレームであり、銅合金薄板のリードフレーム素材に、ニッケルめっき１．０から１．２μｍ、パラジウムめっき０．０３μｍ、及び金フラッシュめっき０．００８μｍがこの順に施されてなる。
The configuration of the sample 1 is as described above.
Sample 3 is a conventional lead frame, in which a copper alloy thin plate lead frame material is subjected to nickel plating 1.0 to 1.2 μm, palladium plating 0.03 μm, and gold flash plating 0.008 μm in this order. .
グラフに示されるように、本発明に係るリードフレームの銀めっき部における光反射率比は、波長４００ｎｍ〜７００ｎｍの可視光について、従来技術のリードフレームの光反射率比を２５ポイント以上上回り、また銀単層めっきが３μｍ施されてなる参考比較品をやや上回る程度の光反射率比となる。
（樹脂密着性）
発明者らは測定の結果から、最表層にパラジウムめっきが施されたリードフレーム部分と前記台部を形成する樹脂との接合面に生じる第１のせん断接着力が、最表層に銀めっきが施されたリードフレーム部分と前記台部を形成する樹脂との接合面に生じる第２のせん断接着力よりも大きいという知見を得て、台部と接するインナー部の一部に銀めっきを施さないこととした。
As shown in the graph, the light reflectance ratio in the silver plating portion of the lead frame according to the present invention exceeds the light reflectance ratio of the conventional lead frame by 25 points or more for visible light having a wavelength of 400 nm to 700 nm, and The light reflectance ratio is slightly higher than that of a reference comparative product having a silver single layer plating of 3 μm.
(Resin adhesion)
Based on the measurement results, the inventors found that the first shear adhesive force generated on the joint surface between the lead frame portion plated with palladium on the outermost layer and the resin forming the base portion was subjected to silver plating on the outermost layer. Acquire knowledge that it is greater than the second shearing adhesive force generated on the joint surface between the formed lead frame part and the resin forming the base part, and do not apply silver plating to a part of the inner part in contact with the base part It was.
この構成によって、銀めっきが除外された部分では前記台部を形成する樹脂が金フラッシュめっき層を通してパラジウムと接合することになり、銀めっきが施された部分に比べてより大きなせん断接着力が生じる。金フラッシュめっき層はごく薄いため、せん断接着力に大きな影響を与えない。
前述した試料１と試料２とを同一条件で赤インクに浸漬する実験を行ったところ、台部との接合面に銀めっきの除外部がある試料１には赤インクが浸入せず、全面に銀めっきが施されている試料２には赤インクが浸入することが確認された。
（その他の特性）
前述した特性の他に、各めっき層は次のような優れた特性を発揮する。
With this configuration, the resin forming the base portion is bonded to palladium through the gold flash plating layer in the portion where silver plating is excluded, and a greater shear adhesive force is generated than in the portion subjected to silver plating. . Since the gold flash plating layer is very thin, it does not significantly affect the shear adhesion.
When an experiment in which the above-described sample 1 and
(Other characteristics)
In addition to the above-described characteristics, each plating layer exhibits the following excellent characteristics.
銀めっき層は優れた光反射率を実現するのみならず、載置される発光素子との接続性やワイヤーボンディング性に優れる。
金フラッシュめっき層は熱的安定性によりアウター部に優れたはんだ付け性を与える。
パラジウムめっき層は化学的に安定であり、高温環境下での耐食性に優れる。
ニッケルめっき層は下地めっきとしての特性を有し、ワイヤーボンディング性、無鉛はんだによるはんだ付け性、耐食性、及び外囲器を形成する樹脂との密着性に寄与する。
The silver plating layer not only realizes excellent light reflectance, but also has excellent connectivity with a light emitting element to be mounted and wire bonding.
The gold flash plating layer provides excellent solderability to the outer part due to thermal stability.
The palladium plating layer is chemically stable and has excellent corrosion resistance in a high temperature environment.
The nickel plating layer has characteristics as a base plating, and contributes to wire bonding, solderability by lead-free solder, corrosion resistance, and adhesion to the resin forming the envelope.
以上説明したように、本発明の半導体装置用リードフレームはインナー部の最表層が銀又は銀合金めっき層である特徴的な構成によって良好な光反射率を実現する。
実施の形態では、この特徴的な構成を実現するために、リードフレームの略全面にニッケルめっき、パラジウムめっき、金フラッシュめっきがこの順に施され、インナー部においてのみその上に銀めっきが施されてなるリードフレームを例示した。しかしながら、この特徴的な構成は、リードフレームの略全面にニッケルめっき、パラジウムめっき、銀めっきがこの順に施され、アウター部においてのみその上に金フラッシュめっきが施されてなるリードフレームによっても実現できることは明らかである。そのようなリードフレームも本発明に含まれる。
As described above, the lead frame for a semiconductor device according to the present invention achieves good light reflectivity by a characteristic configuration in which the outermost layer of the inner part is a silver or silver alloy plating layer.
In the embodiment, in order to realize this characteristic configuration, nickel plating, palladium plating, and gold flash plating are applied in this order on almost the entire surface of the lead frame, and silver plating is applied only on the inner portion thereof. An example of a lead frame is shown. However, this characteristic configuration can also be realized by a lead frame in which nickel plating, palladium plating, and silver plating are applied in this order on almost the entire surface of the lead frame, and gold flash plating is applied only on the outer portion thereof. Is clear. Such a lead frame is also included in the present invention.
なお、実施の形態では簡潔のため、リードフレーム素材に設けられる金属被膜を単にめっき又はめっき層と表現したが、これは前記金属被膜の形成方法を限定する意図ではない。本発明のリードフレームは、実施の形態で説明した金属被膜を、例えば電気めっき、化学めっき、蒸着、スパッタリング、拡散など、金属薄膜を形成するための周知の方法を適宜用いてリードフレーム素材上に形成したものを全て含む。 In the embodiment, for simplicity, the metal film provided on the lead frame material is simply expressed as plating or a plating layer, but this is not intended to limit the method of forming the metal film. In the lead frame of the present invention, the metal film described in the embodiment is appropriately formed on the lead frame material by appropriately using a known method for forming a metal thin film such as electroplating, chemical plating, vapor deposition, sputtering, and diffusion. Includes everything formed.
必要箇所に金属被膜を選択形成するには、従来から用いられるマスキングやブラストといった方法を用いればよい。 In order to selectively form a metal film at a necessary location, a conventional method such as masking or blasting may be used.
本発明に係る半導体装置用リードフレームは、高い発光効率を要求される半導体発光装置に適用され、例えば照明、標識、装飾、通信等に用いられるＬＥＤ装置に適用される。 The lead frame for a semiconductor device according to the present invention is applied to a semiconductor light emitting device that requires high light emission efficiency, and is applied to, for example, an LED device used for illumination, signage, decoration, communication, and the like.
１００ リードフレーム
１０５ 銀めっき
２００ 外囲器台部
３００ 透明樹脂
４００ 半導体発光素子
５００ ボンディングワイヤー
６０１、６０２ 出射光
７００ 半導体発光装置
９００ リードフレーム
DESCRIPTION OF
Claims (7)
前記半導体装置の外囲器に囲繞されることとなるインナー部を有し、
前記インナー部の一部を囲繞して形成されるべき前記外囲器の台部に囲繞されることとなる当該インナー部の一部の少なくとも一部分を前記インナー部から除外した部分であるところの前記インナー部の第１部分の最表層に形成される金属被膜は銀又は銀合金被膜であり、
前記インナー部の第１部分を除いた部分の最表層に形成される金属被膜は金又は金合金被膜である
ことを特徴とするリードフレーム。 A lead frame for a semiconductor device in which a metal film of a plurality of layers is formed on a lead frame material,
Having an inner part to be surrounded by the envelope of the semiconductor device;
The part in which at least a part of the part of the inner part to be surrounded by the base part of the envelope to be formed surrounding the part of the inner part is excluded from the inner part. metal film formed on the uppermost layer of the first portion of the inner portion is Ri silver or silver alloy coating der,
The lead frame according to claim 1, wherein the metal coating formed on the outermost layer of the portion excluding the first portion of the inner portion is a gold or gold alloy coating .
前記銀又は銀合金被膜は前記インナー部の第１部分においてのみ前記金又は金合金被膜の上に形成されている
ことを特徴とする請求項１に記載のリードフレーム。 The gold or gold alloy coating is formed on substantially the entire surface of the lead frame,
The lead frame according to claim 1 , wherein the silver or silver alloy film is formed on the gold or gold alloy film only in the first portion of the inner portion.
前記ニッケルまたはニッケル合金被膜、及び前記パラジウム又はパラジウム合金被膜は前記リードフレームの略全面に形成されている
ことを特徴とする請求項２に記載のリードフレーム。 Nickel or nickel alloy coating, palladium or palladium alloy coating, gold or gold alloy coating, and silver or silver alloy coating are formed in this order on the lead frame material,
The lead frame according to claim 2 , wherein the nickel or nickel alloy coating and the palladium or palladium alloy coating are formed on substantially the entire surface of the lead frame.
前記金又は金合金被膜は前記リードフレームの前記インナー部の第１部分を除いた部分においてのみ前記銀又は銀合金被膜の上に形成されている
ことを特徴とする請求項１に記載のリードフレーム。 The silver or silver alloy coating is formed on substantially the entire surface of the lead frame,
The lead frame according to claim 1 wherein the gold or gold alloy coatings, characterized in that it is formed on the silver or silver alloy coating only in the portion excluding the first portion of the inner portion of the lead frame .
前記ニッケルまたはニッケル合金被膜、及び前記パラジウム又はパラジウム合金被膜は前記リードフレームの略全面において形成されている
ことを特徴とする請求項４に記載のリードフレーム。 Nickel or nickel alloy coating, palladium or palladium alloy coating, silver or silver alloy coating, and gold or gold alloy coating are formed in this order on the lead frame material,
The lead frame according to claim 4 , wherein the nickel or nickel alloy coating and the palladium or palladium alloy coating are formed on substantially the entire surface of the lead frame.
ことを特徴とする請求項１に記載のリードフレーム。 The lead frame according to claim 1, wherein the silver or silver alloy film is formed to a thickness of 0.1 μm or more.
ことを特徴とする請求項１に記載のリードフレーム。 The lead frame according to claim 1, wherein a semiconductor light emitting element is mounted to constitute a semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004003413A JP3940124B2 (en) | 2003-01-16 | 2004-01-08 | apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003007988 | 2003-01-16 | ||
| JP2004003413A JP3940124B2 (en) | 2003-01-16 | 2004-01-08 | apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004241766A JP2004241766A (en) | 2004-08-26 |
| JP3940124B2 true JP3940124B2 (en) | 2007-07-04 |
Family
ID=32964775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004003413A Expired - Lifetime JP3940124B2 (en) | 2003-01-16 | 2004-01-08 | apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3940124B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7888697B2 (en) | 2007-12-03 | 2011-02-15 | Hitachi Cable Precision Co., Ltd. | Lead frame, method of making the same and light receiving/emitting device |
| JPWO2010150824A1 (en) * | 2009-06-24 | 2012-12-10 | 古河電気工業株式会社 | Optical semiconductor device lead frame, optical semiconductor device lead frame manufacturing method, and optical semiconductor device |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5133963B2 (en) * | 2004-12-03 | 2013-01-30 | 日本特殊陶業株式会社 | Ceramic substrate |
| KR101154801B1 (en) | 2004-12-03 | 2012-07-03 | 엔지케이 스파크 플러그 캄파니 리미티드 | Ceramic package for receiving ceramic substrate and light emitting device |
| JP5179766B2 (en) * | 2007-03-08 | 2013-04-10 | スタンレー電気株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| WO2010119575A1 (en) * | 2009-04-16 | 2010-10-21 | 株式会社エノモト | Surface-mounted led lead frame and method for manufacturing same |
| WO2011122665A1 (en) | 2010-03-30 | 2011-10-06 | 大日本印刷株式会社 | Leadframe or substrate for led, semiconductor device, and method for manufacturing leadframe or substrate for led |
| JP5922326B2 (en) * | 2010-07-26 | 2016-05-24 | 大日本印刷株式会社 | LED lead frame or substrate and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
| KR101778832B1 (en) | 2010-11-02 | 2017-09-14 | 다이니폰 인사츠 가부시키가이샤 | Led-element mounting lead frame, resin-attached lead frame, method of manufacturing semiconductor device, and semiconductor-element mounting lead frame |
| TW201250964A (en) * | 2011-01-27 | 2012-12-16 | Dainippon Printing Co Ltd | Resin-attached lead frame, method for manufacturing same, and lead frame |
| JP5682341B2 (en) * | 2011-02-01 | 2015-03-11 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
| JP5977973B2 (en) * | 2012-03-22 | 2016-08-24 | 大日本印刷株式会社 | LED substrate, method of manufacturing the same, and semiconductor device |
| JP5939474B2 (en) * | 2014-07-02 | 2016-06-22 | 大日本印刷株式会社 | Lead frame and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
| JP5817894B2 (en) * | 2014-07-18 | 2015-11-18 | 大日本印刷株式会社 | Lead frame and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
| JP6493975B2 (en) * | 2015-07-03 | 2019-04-03 | 大口マテリアル株式会社 | Multi-row type LED lead frame, LED package, and manufacturing method thereof |
| JP6432943B2 (en) * | 2015-10-26 | 2018-12-05 | 大口マテリアル株式会社 | Lead frame manufacturing method |
| JP6250749B2 (en) * | 2016-07-22 | 2017-12-20 | 大日本印刷株式会社 | LED substrate, method of manufacturing the same, and semiconductor device |
| JP7148792B2 (en) | 2018-09-27 | 2022-10-06 | 日亜化学工業株式会社 | METAL MATERIAL FOR OPTO-SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND OPTO-SEMICONDUCTOR DEVICE USING THE SAME |
-
2004
- 2004-01-08 JP JP2004003413A patent/JP3940124B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7888697B2 (en) | 2007-12-03 | 2011-02-15 | Hitachi Cable Precision Co., Ltd. | Lead frame, method of making the same and light receiving/emitting device |
| JPWO2010150824A1 (en) * | 2009-06-24 | 2012-12-10 | 古河電気工業株式会社 | Optical semiconductor device lead frame, optical semiconductor device lead frame manufacturing method, and optical semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004241766A (en) | 2004-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3940124B2 (en) | apparatus | |
| KR101059361B1 (en) | Lead frame and semiconductor light emitting device | |
| US9966517B2 (en) | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate | |
| TWI514629B (en) | A semiconductor light-emitting element mounting substrate, and a semiconductor light-emitting device using the same | |
| US20110121326A1 (en) | Submount Having Reflective Cu-Ni-Ag Pads Formed Using Electroless Deposition | |
| JP2007067116A (en) | Light-emitting device | |
| JP2007201420A (en) | Semiconductor light-emitting device, semiconductor light-emitting element, and method of manufacturing semiconductor light-emitting device | |
| JP5871174B2 (en) | LED lead frame or substrate, semiconductor device, and LED lead frame or substrate manufacturing method | |
| JP4776175B2 (en) | Light emitting element storage package, method for manufacturing the same, light emitting device, and lighting device | |
| JP7148792B2 (en) | METAL MATERIAL FOR OPTO-SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND OPTO-SEMICONDUCTOR DEVICE USING THE SAME | |
| JP2004228549A (en) | Package for housing light emitting element and light emitting device | |
| JP2004207672A (en) | Package for light emitting element and light emitting device | |
| JP2011228687A (en) | Led lead frame or substrate, semiconductor device, and method of manufacturing led lead frame or substrate | |
| JP2010206034A (en) | Lead frame for optical semiconductor device, package for the optical semiconductor device, the optical semiconductor device, production method of lead frame for optical semiconductor device, production method of package for the optical semiconductor device, and production method of the optical semiconductor device | |
| JP2006351611A (en) | Substrate for mounting light-emitting device and optical semiconductor device using same | |
| JP7116308B2 (en) | METAL MATERIAL FOR OPTO-SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND OPTO-SEMICONDUCTOR DEVICE USING THE SAME | |
| JP2011199066A (en) | Light emitting component, light emitting device, and method for manufacturing the light emitting component | |
| JP6206568B2 (en) | Semiconductor device | |
| JP6701711B2 (en) | Light emitting device | |
| JP7148793B2 (en) | METAL MATERIAL FOR OPTO-SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND OPTO-SEMICONDUCTOR DEVICE USING THE SAME | |
| JP2011199067A (en) | Light emitting component, light emitting device, and method for manufacturing the light emitting component | |
| TWI796363B (en) | Light-emitting device | |
| KR101380387B1 (en) | Light emitting diode package | |
| KR101863545B1 (en) | Semiconductor light emitting device | |
| JP2016001702A (en) | Lead frame with resin and method for manufacturing the same, and led package and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050630 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061128 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061212 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070208 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070306 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070329 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 3940124 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110406 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120406 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130406 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130406 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140406 Year of fee payment: 7 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |