WO2004060793A1 - Structure multicouche et procede de fabrication de cette derniere, structure fonctionnelle et procede de fabrication de cette derniere et masque destine a l'exposition a un faisceau d'electrons et procede de fabrication de ce dernier - Google Patents

Structure multicouche et procede de fabrication de cette derniere, structure fonctionnelle et procede de fabrication de cette derniere et masque destine a l'exposition a un faisceau d'electrons et procede de fabrication de ce dernier Download PDF

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Publication number
WO2004060793A1
WO2004060793A1 PCT/JP2003/014512 JP0314512W WO2004060793A1 WO 2004060793 A1 WO2004060793 A1 WO 2004060793A1 JP 0314512 W JP0314512 W JP 0314512W WO 2004060793 A1 WO2004060793 A1 WO 2004060793A1
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Prior art keywords
layer
substrate
layer containing
structure according
single crystal
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PCT/JP2003/014512
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English (en)
Japanese (ja)
Inventor
Masaki Hara
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Sony Corporation
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Publication of WO2004060793A1 publication Critical patent/WO2004060793A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Definitions

  • the present invention relates to a multilayer structure, a method for manufacturing the same, a functional structure, a method for manufacturing the same, an electron beam exposure mask, and a method for manufacturing the same.
  • a SOI (Silicon On Insulator) substrate has been frequently used as a substrate for fabricating a structure having a flat surface, for example, a micromirror.
  • Structure which is a structure having upper and lower single-crystal silicon thermal oxide film called B OX layer between the (S i) layer (S i 0 2 film), by processing them single crystal S i layer It is what makes.
  • a dry etching method using high-density plasma called a deep RIE (Reactive Ion Etching) method
  • RIE Reactive Ion Etching
  • Japanese Patent Application Laid-Open No. 5-2187825 discloses that a Si substrate is made porous, and a non-porous Si single crystal layer is formed on the porous substrate.
  • a technique for bonding both Si substrates by heating the non-porous Si single crystal layer to a temperature of 450 to 900 ° C with the surface of the non-porous Si single crystal layer bonded to another substrate having a metal surface. It has been disclosed.
  • Japanese Patent Application Laid-Open No. 5-10971 discloses that the surface of the first Si substrate on which the polycrystalline Si layer is formed is in contact with the first Si substrate. There is disclosed a technique of bonding both Si substrates by performing a heat treatment at about 100 ° C.
  • Japanese Patent Application Laid-Open Nos. 11-15035 and 110-1576 describe that two substrates are provided with a reaction layer between a metal and a metal or a semiconductor between them.
  • a technique for manufacturing an S 0 I substrate by bonding by forming is disclosed.
  • the problem to be solved by the present invention is to manufacture various functional structures such as micromirrors inexpensively, easily and accurately. And a method of manufacturing the same.
  • Another object of the present invention is to provide a functional structure capable of manufacturing various types of functional structures such as micromirrors inexpensively, easily, and accurately, and a method of manufacturing the same. .
  • Still another object of the present invention is to provide an electron beam exposure mask capable of manufacturing an electron beam exposure mask at a low cost, easily and accurately, and a method of manufacturing the same. Disclosure of the invention
  • a multilayer structure according to a first invention of the present invention comprises:
  • first layer and a second layer are joined at room temperature via a layer containing at least one kind of metal.
  • the single crystal material includes not only a perfect single crystal but also a material that can be regarded as a substantially single crystal, such as a material containing a sub-grain boundary. Also, if one of the first and second layers is not made of a single crystal material, it is specifically a polycrystalline or amorphous material. Typical—In one example, both the first and second layers consist of a single crystal material.
  • the single crystal material is excellent as a structural material because it has extremely low internal stress, is tough, and can produce a flat layer or a substrate.
  • the first layer and the second layer may be made of the same material or may be made of different materials.
  • the material of the first layer and the second layer can be selected according to the purpose of use of the multilayer structure, and basically any material can be used. If that, one of the first layer and the first layer, S i, S i have x G e x (was however, 0 ⁇ x ⁇ 1), S i C :, C ( diamond etc.), III _ V compound semiconductor (e.g., G a a s based semiconductor, a 1 G a I n p type semiconducting material, G a n type semiconductor, etc.) consists of compounds typified by semiconductor, the other is, S i, glass (For example, Pyrex (registered trademark) glass) and ceramics.
  • the semiconductor When a semiconductor is used as the material of the first layer and the second layer, the semiconductor may be non-doped or may be doped with an n-type impurity or a p-type impurity.
  • at least one of the first layer and the second layer is made of single-crystal Si, and in particular, both the first layer and the second layer are made of single-crystal Si.
  • at least hand of the first layer and the second layer is made of a single crystal S i, the other of the t first and second layers of glass or ceramics
  • the layer is made of a dry-etchable material.
  • the material that can be dry-etched various materials can be used in combination with the dry-etching method to be used, and single crystal Si is one of the materials excellent in this dry-etching property.
  • Each of the first layer and the second layer may have a single-layer structure made of a single material or a multi-layer structure made of a plurality of layers made of the same or a plurality of materials. . Further, the first layer and the second layer may have a structure or an element formed on one or both of them.
  • the layer containing one or more metals sandwiched between the first and second layers typically comprises a metal or alloy.
  • This metal or alloy can be selected according to the purpose of use of the multilayer structure, and basically any material can be used. However, dry etching resistance, electrical conductivity, The most suitable one is often selected from the viewpoint of thermal conductivity and the like. Specific examples include Al, Cu, Au, Cr, Ta, and W.
  • a low-melting-point metal such as A1 can be used because room-temperature bonding is used.
  • the layer containing one or more metals is patterned into a predetermined shape depending on the intended use of the multilayer structure. When showing the thermal expansion coefficient of a metal exemplified above by reference, S for i that 2.
  • W Shirisai de is 8. 4 X 1 0- 6 / ° C, the C 0 Shirisai de 9. a 4 X 1 0 one 6 / ° C.
  • the first layer and the second layer are preferably used.
  • An etching stopper is provided between at least one of the layers and the layer containing one or more metals.
  • An insulating film (such as a Si 2 film or a Si 3 N 4 film) is typically used as the etching stopper layer.
  • the first layer and the second layer may be the substrate itself, films formed by various film forming techniques, or thin layers of the substrate.
  • the thickness of at least one of the first layer and the first layer is typically less than 100, more typically less than 50 um, more typically 10 m or less.
  • the method for manufacturing a multilayer structure according to the second invention of the present invention includes:
  • the method for producing a multilayer structure according to the third invention of the present invention comprises:
  • first substrate and a second substrate at least one of which is made of a single crystal material, forming a layer containing one or more metals on a main surface of the first substrate;
  • the first substrate and the second substrate correspond to the first layer and the second layer in the first invention, and the first substrate is made thinner, and the first substrate is formed by a film forming technique.
  • the first substrate itself or the like is the first layer
  • the second substrate is a thin layer, a film formed by a film forming technique, or the second substrate itself is the first layer.
  • the room-temperature bonding between the second substrate and the layer containing one or more metals is typically performed by bonding the main surface of the second substrate and the surface of the layer containing one or more metals in an ultra-high vacuum.
  • the cleaning is performed, and pressure is applied in a state where they are opposed to each other.
  • one of the first substrate and the second substrate is thinned by, for example, polishing the back surface.
  • the substrate to be thinned is made of a single crystal material
  • the thinned substrate becomes a single crystal layer.
  • the first substrate and the second substrate may be made of a single crystal material.
  • a porous layer is formed on one of the main surfaces, a single crystal layer is epitaxially grown on the porous layer, and the second substrate and a layer containing at least one metal are bonded at room temperature. Separation may be performed at the position of the porous layer. This separation utilizes the fact that the porous layer becomes a mechanical weak point.
  • the single crystal layer that is epitaxially grown on the porous layer is porous.
  • a hydrogen accumulation layer is formed by ion-implanting hydrogen ions into one of the main surfaces of the first substrate and the second substrate made of a single crystal material, and the second substrate and one or more kinds of metals are formed. After bonding at room temperature to a layer containing, separation may be performed at the position of the hydrogen storage layer. This separation utilizes the fact that the hydrogen storage layer becomes a mechanical weak point.
  • a layer containing at least one type of metal is patterned into a predetermined shape.
  • the functional structure according to the fourth invention of the present invention is:
  • a first layer and a first layer, at least one of which is made of a single crystal material, are joined at room temperature through a layer containing one or more metals;
  • At least one of the layer containing one or more metals, the first layer, and the second layer is patterned in a predetermined shape.
  • the layer containing one or more types of metal, the first layer, and the second layer are each patterned into a predetermined shape. These patterning shapes depend on the purpose of use of the functional structure and the functions it has. It is appropriately selected depending on the situation.
  • the functional structure is a structure having some function, and is generally, for example, a mechanical, electrical, electro-mechanical, optical, or electro-optical component or element.
  • a specific example is a micro mirror used for scanning a laser beam in an optical disk device or the like.
  • the method for manufacturing a functional structure according to the fifth aspect of the present invention includes:
  • first substrate and a second substrate at least one of which is made of a single crystal material, forming a layer containing one or more metals on a main surface of the first substrate;
  • the layer containing one or more types of metal is patterned into a predetermined shape.
  • one of the first substrate and the second substrate is patterned into a predetermined shape. If necessary, one etching stopper is formed between at least one of the first substrate and the second substrate and a layer containing one or more types of metals.
  • a first layer and a second layer, at least one of which is made of a single crystal material, are joined at room temperature via a layer containing one or more metals,
  • a layer containing at least one metal and at least a first layer and a second layer A mask pattern is formed on one side.
  • a material for forming a mask pattern a material having at least one kind of metal and at least one of the first layer and the second layer is preferably used because it has a high ability to block an electron beam. It will be selected accordingly.
  • the mask pattern is typically formed by a layer containing one or more metals and one of the first layer and the second layer, and the other of the first layer and the second layer forms the mask pattern. Is completely removed.
  • a method of manufacturing a mask for electron beam exposure comprising: preparing a first substrate and a second substrate, at least one of which is made of a single crystal material, Forming a layer containing the above metal;
  • At least one of the first layer and the first layer made of a single-crystal material is interposed via a layer containing at least one kind of metal, for example, a layer made of a metal or an alloy.
  • the first layer and the second layer or one of the first and second substrates by dry etching by bonding the first layer and the first substrate and the second substrate at room temperature.
  • the layer containing one or more metals has a sufficiently high electrical conductivity as compared to the SiO 2 film, so that the charge No charge-up occurs, and the orbit of the ion is bent by the charge-up so that it is below the layer to be etched. It is possible to prevent the occurrence of the notching phenomenon in which the portion is hollowed out. For this reason, it is not necessary to switch the recipe of the etching process or install a mechanism for preventing charge up in the etching apparatus, so that the process is easy and the cost of the countermeasure can be reduced.
  • the thermal expansion differs from the conventional case where the substrates are bonded by using a high-temperature heat treatment. Can be eliminated.
  • the substrates to be bonded have different coefficients of thermal expansion (linear expansion coefficients)
  • the substrates are greatly warped during the heat treatment, and a flat bonded substrate is obtained. This makes it difficult to manufacture the functional structure.
  • one of the first layer and the second layer or one of the first substrate and the second substrate can be formed of an insulator such as A1N.
  • a reaction layer is not formed at the interface between layers or the interface between substrates.
  • FIG. 1 is a cross-sectional view showing a multilayer structure according to a first embodiment of the present invention.
  • FIGS. 2A and 2B are multilayer structures for manufacturing a micromirror mirror according to a second embodiment of the present invention. Plan view and cross section showing body, Fig. 3 A
  • FIG. 3B is a plan view and a sectional view showing a micromirror according to a second embodiment of the present invention.
  • FIGS. 4A to 4F are diagrams of a multilayer structure according to a third embodiment of the present invention.
  • FIG. 5A to FIG. 5D are cross-sectional views for explaining a method of manufacturing a mask for electron beam exposure according to the fourth embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 shows a multilayer structure according to a first embodiment of the present invention.
  • the (100) single-crystal Si layers 2 and 3 are joined at room temperature with the upper and lower sides of the metal film 1 interposed therebetween to form a three-layer structure.
  • the material of the metal film for example, A1 or Cu can be used.
  • the thickness of the (100) single crystal Si layer 2 depends on the use thereof, but is generally 100 Lim or less, typically 50 m or less.
  • the (100) single-crystal Si layer 3 serves as a support of the multilayer structure, and is composed of the (100) single-crystal Si substrate itself, and has a thickness of, for example, 300 m to 1 m. mm.
  • a metal film 1 is formed on a (100) single-crystal Si layer 3 made of a (100) single-crystal Si substrate by a sputtering method or a vacuum evaporation method.
  • the (100) single-crystal Si layer 3 on which the substrate was formed was opposed to another (100) single-crystal Si substrate at an interval in one ultra-high vacuum chamber, and A r After cleaning by irradiation with ions, normal pressure bonding is performed by applying pressure while keeping them in close contact.
  • Fig. 1 shows A multilayer structure is manufactured.
  • the (100) single-crystal Si layer 2 has excellent workability by dry etching and is most suitable as a structural material
  • the (100) single-crystal Si layer 2 is desirably etched by dry etching.
  • the base of the (100) single-crystal Si layer 2 is a metal film 1 having excellent dry etching resistance
  • the (100) single-crystal Si layer 2 is, for example, RIE.
  • the metal film 1 becomes one layer of etching.
  • the metal film 1 is made of the (100) single crystal single crystal. It works effectively as an etching stopper layer of the Si layer 2. It not only by an electrically conductive metal layer 1, the abnormality of the S 0 I substrate single crystal S i layer of the single crystal S i layer due to charge-up of S i ⁇ 2 film has become a problem when the dry etching ing of It is possible to suppress the occurrence of the etching phenomenon, that is, the notching phenomenon, and there is no problem that the lower portion of the (100) single-crystal Si layer 2 is cut off.
  • the process is simple. Low cost.
  • the metal film 1 can be expected to function as a current path / heat conduction path. Further, since room-temperature bonding is used for bonding the substrates, there is no risk of warpage of the substrate due to a difference in the thermal expansion coefficient between the metal used for the metal film 1 and Si, and there is no fear of a reaction between the metal and Si.
  • FIGS. 2A and 2B show a multilayer structure having a three-layer structure used for manufacturing the micromirror.
  • FIG. 2A is a plan view
  • FIG. 2B is an X-X line of FIG. 2A. It is sectional drawing along.
  • this multilayer structure is formed by bonding (100) single-crystal Si layers 12 and 13 at room temperature with the upper and lower sides of metal film 11 interposed therebetween.
  • the formation of the three-layer structure is the same as that of the first embodiment, except that the metal film 11 is patterned in a predetermined shape corresponding to the structure of the microphone opening mirror.
  • illustration of the (100) single crystal Si layer 12 is omitted.
  • the method for manufacturing the multilayer structure is the same as the method for manufacturing the multilayer structure according to the first embodiment, except that the metal film 11 is patterned into a predetermined shape after the metal film 11 is formed. is there.
  • FIGS. 3A and 3B show micromirrors manufactured using the multilayer structure shown in FIGS. 2A and 2B, wherein FIG. 3A is a plan view and FIG. FIG. 3 is a cross-sectional view taken along the line Y-Y of FIG.
  • This micromirror is manufactured using the multilayer structure shown in FIGS. 3A and 3B as follows. That is, first, a mirror surface 14 made of a metal film and a pair of electrode pads 15 and 16 are formed at predetermined positions on the (100) single crystal Si layer 12. The mirror surface 14 and the electrode pads 15 and 16 are formed by forming a metal film on the entire surface of the (100) single crystal Si layer 12 and then using the metal film as a mask with a resist pattern or the like. It can be formed by a pattern jung method by etching or by a lift-off method.
  • the (100) single-crystal Si layer 12 is dry-etched. After the resist pattern 12 was etched to an intermediate depth, the resist pattern was removed, and the surface of the (100) single crystal Si layer 12 was again masked with a resist pattern having a predetermined shape.
  • a rectangular mirror portion 17 and two V-shaped hinge portions that support the mirror portion 17 are formed. 18 and 19 are formed.
  • the (100) single-crystal Si layer 13 is masked by a resist pattern having a predetermined shape, and the (100) single-crystal Si layer 13 is dry-etched.
  • the Si through layer 13 is etched through.
  • a micro mirror 20 composed of the mirror part 17 and the hinge parts 18 and 19 is formed.
  • the micromirror 20 is a cantilever supported at the root of the hinge 18-19.
  • the entire hinge portions 18 and 19 and the predetermined portion on the hinge portions 18 and 19 side of the mirror portion 17 are formed by the (100) single crystal Si layer 12 and the metal film 11. It has a bimorph structure consisting of two layers.
  • the mirror surface 14 is formed on the mirror part 17, and the electrode surface. Heads 15 and 16 are formed at the roots of hinges 18 and 19, respectively.
  • the hinge portions 18 and 19 that generate heat by applying a pulse voltage between the electrode pads 15 and 16 have a coefficient of thermal expansion between S i and metal. It is deformed from the difference, and as a result it can move up and down.
  • the micromirror 20 can be used, for example, as a device for scanning one laser beam in an optical disk device.
  • the fine pattern of the metal film 11 not used in the configuration of the micromirror 20 may be replaced by, for example, an electric It can be used as a standard wiring.
  • the microphone opening mirror can be easily manufactured using the multilayer structure shown in FIGS. 2A and 2B.
  • a thin-film device having a fine metal pattern on the back side like the micromirror 120 could not be easily manufactured.
  • a multi-layered structure in which a metal film 11 previously patterned into a predetermined shape is formed between (100) single-crystal Si layers 12 and 13 is formed. Since the micromirror 20 is manufactured using the body, a fine metal pattern can be formed on the back side of the micromirror 20, which is a thin film device using single crystal Si. It goes without saying that various advantages similar to those of the first embodiment can be obtained.
  • a method for manufacturing a multilayer structure according to the third embodiment of the present invention will be described. This manufacturing method is shown in FIGS. 4A to 4F.
  • a (100) single crystal Si substrate 21 is prepared, and the surface is cleaned by cleaning.
  • the (100) The single-crystal Si layer 23 is epitaxially grown to form a structure having the (100) single-crystal Si layer 23 on the porous Si layer 22.
  • a metal film 24 is formed on the (100) single crystal Si layer 23 by a sputtering method.
  • a (100) single crystal Si substrate 25 whose surface has been cleaned by cleaning in advance is separately prepared, and the (100) single crystal Si substrate 25 is prepared in an ultra-high vacuum.
  • the (100) single crystal Si substrate 25 is prepared in an ultra-high vacuum.
  • a water jet is injected toward the porous Si layer 22 of the (100) single-crystal Si substrate 21 to form a porous Si layer. Separate at 1 and 2.
  • the porous Si layer 22 remaining on the outermost surface of one of the separated (100) single crystal Si substrates 25 is chemically removed.
  • the metal film 24 and the (100) single-crystal Si layer 27 are sequentially formed on the (100) single-crystal Si substrate 25.
  • a multi-layer structure having a three-layer structure is manufactured.
  • the (100) single crystal Si layer 23 is formed by epitaxial growth, its thickness is easily reduced to about 1 / m or less. Not only can it be controlled, but the in-plane distribution of its thickness can be controlled with high precision. In addition, advantages similar to those of the first embodiment can be obtained.
  • FIGS. 5A to 5D This manufacturing method is shown in FIGS. 5A to 5D.
  • a (100) single crystal Si substrate 31 is formed on a (100) single-crystal Si substrate 31 by using, for example, a normal temperature bonding method as in the third embodiment. Then, a multilayer structure having a three-layer structure in which a metal film 32 and a (100) single-crystal Si layer 33 are sequentially formed is manufactured.
  • the surface of the (100) single-crystal Si layer 33 is formed by a resist pattern (not shown) made of an electron beam resist having a predetermined shape corresponding to the mask pattern.
  • the (100) single-crystal Si layer 3 is dry-etched until the metal film 32 is exposed in a state masked by You.
  • the metal film 32 is dry-etched again using this resist pattern.
  • a line-and-space mask pattern 34 having a two-layer structure of the metal film 32 and the (100) single-crystal Si layer 33 is formed.
  • a resist pattern having a predetermined shape with an opening corresponding to the mask pattern 34 is formed on the back surface of the (100) single crystal Si substrate 31, Using this resist pattern as a mask, through-holes are formed by dry-etching the (100) single-crystal Si substrate 31 from the back side. As a result, the mask pattern 34 has a structure floating in the air except for its end.
  • the intended electron beam exposure mask is manufactured.
  • the mask pattern 34 of the mask for electron beam exposure has a two-layer structure of the metal film 32 and the (100) single-crystal Si layer 33.
  • heat generated by the electron beam exposure mask heated by the electron beam irradiation is transferred to a metal film 3 having particularly good thermal conductivity through a heat conduction path.
  • deformation of the mask pattern 34 due to a rise in temperature can be effectively prevented. Therefore, it is possible to perform exposure that faithfully reflects the shape of the mask pattern 34.
  • Example 1 Example corresponding to the first embodiment
  • the (100) single-crystal Si layer 3 has a diameter of 5 inches and a thickness of 500 m (100) single-crystal Si substrate; 0) The thickness of the single crystal Si layer 1 is 0 m.
  • the metal film 1 an A1 film having a thickness of 1 ⁇ m was used. These layers are firmly bonded to each other and can be used without any problem even when heated to about 400 ° C.
  • This multilayer structure was manufactured by the cold bonding method as follows. First, an A1 film having a thickness of 1 is formed by a sputtering method on a (100) single crystal Si substrate 3 having a diameter of 5 inches and a thickness of 500 m serving as a supporting substrate.
  • a diameter of a thickness of 5 Inchi 2 0 0 (1 0 0) zm is prepared separately monocrystal S i substrate, both 1 X 1 0- 9 T 0 rr total one scan pressure board
  • the substrates were held opposite to each other in an ultra-high vacuum vessel and irradiated with an Ar ion beam at a pressure of 1 ⁇ 10 ⁇ 3 ⁇ 0 rr to clean the surfaces of the substrates.
  • the accelerating voltage of the Ar ion was 1 kV.
  • the multilayer structure manufactured in this manner can suppress the notching phenomenon during the dry etching of the (100) single-crystal Si layer 2 and contribute to the realization of an excellent etched shape.
  • Example 1 Example corresponding to the second embodiment
  • a (100) single crystal Si substrate having a diameter of 5 inches was used as the (100) single crystal Si layer 13 of the multilayer structure shown in FIGS. 2A and 2B.
  • the thickness of the (100) single crystal Si layer 13 is 525 m
  • the thickness of the upper (100) single crystal Si layer 12 is 20 m.
  • the metal film 11 is an A1 film having a thickness of 1.
  • This multilayer structure can be manufactured by the same process as in Example 1. However, after forming an A 1 film as a metal film 11 on a (100) single crystal Si layer 13, This is different from Example 1 in that normal temperature bonding is performed after pattern jungling of one film.
  • a micromirror shown in FIGS. 3A and 3B was manufactured.
  • the mirror surface 14 and the electrode pads 15 and 16 are formed by forming a Cr / Au film on the (100) single-crystal Si layer 12 by the sputtering method, and then pattern-jewing the Cr / Au film. Thus, they were simultaneously formed.
  • the basic structure of the micromirror 20 was formed by dry-etching the (100) single-crystal Si layer 12.
  • the (100) single crystal Si layer 12 was a low resistance layer having a specific resistance of 0.01 ⁇ cm.
  • the hinge sections 18 and 19 of the microphone opening mirror 20 have a (100) single-crystal Si layer 12 and an A1 film formed in advance as a metal layer 11 on the lower side, and a bimorph It has a structure.
  • the upper etching is performed by the over-etching after the (100) single-crystal Si layer 13 penetrates. Since there is a concern that the (100) single crystal Si layer 12 may be damaged, for example, when manufacturing a multilayer structure, the (100) single crystal Si layer By forming one insulating film such as two films and then forming the metal film 11 thereon, this insulating film becomes one layer of etching (100) single crystal Si Damage to the layer 12 can be effectively prevented. This insulating film also reduces the value of the current flowing when current flows through the hinge portions 18 and 19 of the bimorph structure. It also works to reduce power consumption.
  • Example 3 Example corresponding to the third embodiment.
  • the multilayer structure was manufactured according to the manufacturing method shown in FIGS. 4A to 4F.
  • (100) single crystal Si substrates 21 and 25 having a diameter of 5 inches are prepared.
  • the thickness of the (100) single crystal Si substrate 21 was 525 m
  • the thickness of the (100) single crystal Si substrate 25 was 200 m.
  • the (100) single crystal Si substrates 21 and 25 are anodized to form a porous Si layer 22 having a thickness of 0.8 m.
  • a (100) single crystal Si layer (23) was grown by an epitaxial thickness of 0.6. As a result, a structure in which the (100) single crystal Si layer 23 was formed on the porous Si layer 22 was produced.
  • an Al film having a thickness of 1 / m was formed as a metal film 22 on the (100) single crystal Si layer I3 by a sputtering method.
  • the (100) single-crystal Si substrate 21 and the (100) single-crystal Si substrate 25 formed up to the metal film 22 were put into an ultra-high vacuum chamber, and their surfaces were cleaned. After cleaning by cleaning by Ar ion beam irradiation, they were brought into close contact with each other and pressure was applied to perform normal temperature bonding.
  • the joining conditions were the same as in Example 1.
  • a composite substrate was obtained in which the (100) single-crystal Si substrate 21 and the (100) single-crystal Si substrate 25 formed up to the metal film 22 were integrated.
  • the multilayer structure manufactured in this way has a better in-plane thickness than a multilayer structure manufactured by a manufacturing method in which one substrate is thinned by polishing the back surface after bonding the substrates. It has uniformity and is suitable for forming a single-crystal Si layer with a thickness of about 1 m.
  • Example 4 Example corresponding to the fourth embodiment.
  • the thickness of the (100) single crystal Si substrate 31 is 5255 wm, and the thickness of the (100) single crystal Si layer 33 is 0. 6 um.
  • the metal film 32 an A1 film having a thickness of 0.1 m was used.
  • a mask for electron beam exposure was manufactured as follows. First, an electron beam resist is applied on the (100) single crystal Si layer 33, and the electron beam resist is exposed to a desired pattern shape by an electron beam drawing method, and then the resist is developed. A resist pattern is formed. Next, the (100) single-crystal Si layer 33 is pattern-junged by performing dry etching using this resist pattern to obtain a desired pattern shape. Subsequently, the lower metal film 32 is also dry-etched using this resist pattern to form a pattern having the same shape as the pattern shape of the (100) single-crystal Si layer 33. Thus, a mask pattern 34 is formed.
  • the (100) single-crystal Si layer 33 constituting the mask pattern 34 is a tough material having almost no residual stress.
  • the lower metal film 32 has an excellent drawing capability because it has a function of quickly releasing the charge charged up to the electron beam exposure mask and the heat generated by the electron beam irradiation at the time of exposure.
  • the numerical values are merely examples, and numerical values different from these may be used as necessary.
  • a material, a structure, a shape, a plane orientation, a process, or the like may be used.
  • a ceramic material may be used instead of the (100) single crystal Si layer 3. It is also very useful to use a multilayer structure having a metal film between a ceramic substrate and a single-crystal Si substrate instead of the multilayer structure of the first embodiment. Further, a structure such as a cavity may be provided in advance on the side to be a supporting substrate, and a substrate having a metal film may be bonded thereto to manufacture a similar structure.
  • the porous Si layer 22 was used as the separation layer, but the porous Si layer 22 was formed on the (100) single crystal Si substrate 21. Instead, hydrogen ions may be implanted into the (100) single crystal Si substrate 21 and a hydrogen storage layer formed thereby may be used as a separation layer.
  • a layer made of, for example, SiC or diamond may be used instead of the (100) single crystal Si layer 33.
  • a layer containing at least one kind of metal for example, a layer made of a metal or an alloy

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)

Abstract

La présente invention porte sur une première couche et une deuxième couche qui sont telles qu'au au moins une couche est constituée d'une matière monocristalline, ces deux couches sont associées à température ambiante avec une couche contenant au moins un métal, par exemple, un film métallique tel qu'un film en Al, intercalé entre ces dernières, ceci formant ainsi une structure multicouche. Les première et deuxième couches peuvent être constituées de matières monocristallines ou peuvent être constituées de matières différentes. Les première et deuxième couches sont, par exemple, des couches en Si monocristallin Si ou des substrats en Si monocristallin. A l'aide de cette structure multicouche on fabrique micromiroir par exemple.
PCT/JP2003/014512 2002-12-26 2003-11-14 Structure multicouche et procede de fabrication de cette derniere, structure fonctionnelle et procede de fabrication de cette derniere et masque destine a l'exposition a un faisceau d'electrons et procede de fabrication de ce dernier WO2004060793A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002377413A JP2004207625A (ja) 2002-12-26 2002-12-26 多層構造体およびその製造方法ならびに機能構造体およびその製造方法ならびに電子線露光用マスクおよびその製造方法
JP2002-377413 2002-12-26

Publications (1)

Publication Number Publication Date
WO2004060793A1 true WO2004060793A1 (fr) 2004-07-22

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PCT/JP2003/014512 WO2004060793A1 (fr) 2002-12-26 2003-11-14 Structure multicouche et procede de fabrication de cette derniere, structure fonctionnelle et procede de fabrication de cette derniere et masque destine a l'exposition a un faisceau d'electrons et procede de fabrication de ce dernier

Country Status (3)

Country Link
JP (1) JP2004207625A (fr)
TW (1) TW200426905A (fr)
WO (1) WO2004060793A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216393A (ja) * 1987-03-04 1988-09-08 Fujitsu Ltd 圧電アクチユエ−タの製造方法
JPH05259038A (ja) * 1992-03-10 1993-10-08 Nippon Steel Corp Ｘ線転写用マスク
EP0845831A2 (fr) * 1996-11-28 1998-06-03 Matsushita Electric Industrial Co., Ltd. Guide d'ondes millimétrique et dispositif de circuit l'utilisant
JPH1144797A (ja) * 1997-07-29 1999-02-16 Nec Corp シリコン分光結晶とその製造方法
US20010021086A1 (en) * 2000-02-01 2001-09-13 Hideki Kuwajima Head support mechanism and thin film piezoelectric actuator
US6375313B1 (en) * 2001-01-08 2002-04-23 Hewlett-Packard Company Orifice plate for inkjet printhead

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216393A (ja) * 1987-03-04 1988-09-08 Fujitsu Ltd 圧電アクチユエ−タの製造方法
JPH05259038A (ja) * 1992-03-10 1993-10-08 Nippon Steel Corp Ｘ線転写用マスク
EP0845831A2 (fr) * 1996-11-28 1998-06-03 Matsushita Electric Industrial Co., Ltd. Guide d'ondes millimétrique et dispositif de circuit l'utilisant
JPH1144797A (ja) * 1997-07-29 1999-02-16 Nec Corp シリコン分光結晶とその製造方法
US20010021086A1 (en) * 2000-02-01 2001-09-13 Hideki Kuwajima Head support mechanism and thin film piezoelectric actuator
US6375313B1 (en) * 2001-01-08 2002-04-23 Hewlett-Packard Company Orifice plate for inkjet printhead

Also Published As

Publication number Publication date
TW200426905A (en) 2004-12-01
JP2004207625A (ja) 2004-07-22

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