WO2004051206A1 - Dispositif de mesure optique d'un systeme de reproduction - Google Patents

Dispositif de mesure optique d'un systeme de reproduction Download PDF

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Publication number
WO2004051206A1
WO2004051206A1 PCT/EP2003/012207 EP0312207W WO2004051206A1 WO 2004051206 A1 WO2004051206 A1 WO 2004051206A1 EP 0312207 W EP0312207 W EP 0312207W WO 2004051206 A1 WO2004051206 A1 WO 2004051206A1
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WO
WIPO (PCT)
Prior art keywords
pattern
sub
image
diffraction
imaging system
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Application number
PCT/EP2003/012207
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German (de)
English (en)
Inventor
Ulrich Wegmann
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Publication of WO2004051206A1 publication Critical patent/WO2004051206A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0271—Testing optical properties by measuring geometrical properties or aberrations by using interferometric methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Definitions

  • the invention relates to a device for optical measurement of an imaging system, e.g. by wave front detection using shearing interferometry, according to the preamble of claim 1.
  • Devices of this type are typically used for the spatially resolved determination of the imaging quality or image errors of optical imaging systems over their entire pupil area.
  • the invention relates in particular to devices with which image errors of high-resolution imaging systems, such as those e.g. in microlithography systems for structuring semiconductor components, can be determined with high precision in a spatially resolved manner across the pupil of the imaging system. If the same radiation is used for the measurement as is used by the imaging system in its normal operation, and the measurement device can be integrated in a structural unit with the imaging system, this is also referred to as a so-called operational interferometer (BIF).
  • BIF operational interferometer
  • shearing interferometry uses one- or two-dimensional single-frequency diffraction gratings and corresponding coherence masks, for example checkerboard diffraction gratings.
  • the shear angle of the shearing interferometry is determined by the grating period and the wavelength of the radiation used.
  • the spatial resolution with which the phase values of the pupil of the imaging system to be measured, hereinafter also referred to as the test object, can be determined is given by the ratio of the shear angle to the numerical aperture of the test object.
  • the spatially resolved determination of the phase values of the pupil is based on a predetermined number of support points which are distributed in an orthogonal grid over the pupil diameter.
  • the desired accuracy of the wavefront measurement also increases. For example, it is desirable to determine the contributions of high-frequency wavefront components to the scattered light or to control effects that have hitherto hardly been adequately detectable as a sum error of residual machining errors on lens surfaces. On the other hand, there are cases and situations in which a measurement with less resolution and consequently less effort is sufficient.
  • the invention is based on the technical problem of providing a new type of device of the type mentioned at the outset which enables a further improved measurement of optical imaging systems, for example by wave front detection by means of shearing interferometry and / or by distortion measurement by means of moiré structures, in particular comfortable and flexible measurements different spatial resolution and / or with improved pupil illumination.
  • the image structure and / or the object structure has a multi-frequency pattern which comprises at least two periodic patterns of different periodicity lengths in at least one direction and / or comprises at least one two-dimensional main pattern and at least one sub-pattern which is formed in structural fields of the main pattern.
  • Wavefronting structure required.
  • an improved adaptation of the structural frequencies to the so-called parceling of the pupil is possible, which describes the effect that many conventional lighting systems, such as those e.g. in
  • Microlithography systems are used, a periodic intensity variation occurs in the pupil plane of the imaging system to be measured.
  • the use of the multi-frequency pattern In the case of the wavefront formation structure on the object side, the so-called pupil filling can be optimized by the corresponding diffraction effect, that is to say that the measurement radiation used covers the entire pupil of the imaging system as far as possible and not only, for example, a central pupil area.
  • the multi-frequency pattern comprises a combination of a two-dimensional main pattern which has periodically arranged structure fields, e.g. a checkerboard pattern, with several sub-patterns in structure fields of the main pattern, the several sub-patterns differing in their periodicity lengths and / or periodicity directions.
  • the main pattern is a periodic polygon pattern, e.g. from checkerboard-like squares or from triangles, and in addition one or more sub-patterns are provided, into which a respective polygon of the main pattern is structured.
  • FIG. 1 shows a schematic side view of a device for the interferometric measurement of an optical imaging system through wavefront detection using shearing interferometry with object-side coherence mask and image-side diffraction grating
  • FIG. 2 shows a schematic illustration of a two-frequency pupil scanning in a single diffraction direction
  • FIG. 3 shows a representation corresponding to FIG. 2, but for pupil screening with different periodicity in two mutually perpendicular directions
  • a diffraction grating structure with a main checkerboard pattern and two line grating subpatterns have the same periodicity length and periodicity directions parallel to each of the two orthogonal periodicity directions of the main checkerboard pattern and the position of the associated ones is shown schematically in the right partial image 0. and +1. Diffraction orders,
  • FIG. 5 shows a representation corresponding to FIG. 4, but for a variant with sub-pattern periodicity directions rotated by 45 ° with respect to the main pattern periodicity directions,
  • FIGS. 4 and 5 shows a representation corresponding to FIGS. 4 and 5 for a combined three-frequency pattern variant with four sub-patterns with sub-pattern periodicity directions oriented to the main pattern periodicity directions at an angle of 0 ° or 45 °,
  • FIGS. 4 to 6 shows a representation corresponding to FIGS. 4 to 6, but for a variant with a checkerboard-like arrangement of orthogonal single-frequency line gratings
  • 8 shows a representation corresponding to FIG. 4, but for a variant with a checkerboard-like arrangement of orthogonal two-frequency line gratings
  • FIG. 9 shows a representation corresponding to FIG. 4, but for a variant with a checkerboard sub-pattern
  • FIG. 10 shows a representation corresponding to FIG. 9 for a variant with chessboard periodicity directions of the sub-pattern rotated by 45 ° to the chessboard periodicity directions of the main pattern
  • FIGS. 9 and 10 are a representation corresponding to FIGS. 9 and 10 for a mixed variant with two different checkerboard sub-patterns
  • FIG. 12 shows a view corresponding to FIG. 9 for a variant with a checkerboard-like arrangement of several checkerboard sub-patterns of different periodicity lengths
  • FIG. 13 shows a schematic illustration of a diffraction structure with a multi-frequency pattern consisting of a triangular, periodic main pattern and a checkerboard sub-pattern
  • FIG. 14 shows a representation corresponding to FIG. 13 for a variant with two orthogonal line grid submustems each within a respective main pattern triangle field and
  • FIG. 15 shows a representation corresponding to FIG. 4 for a variant with a checkerboard-shaped square-in-square multi-frequency pattern.
  • 1 illustrates a typical structure of a device for pupil-resolved determination of the imaging quality or of possible image errors of an optical imaging system 1 by means of shearing interferometry wavefront measurement.
  • the imaging system 1 to be measured can be, for example, a projection objective of a microlithography system.
  • the lens 1 is simplified represented by an object-side lens 1 a, an objective pupil 1 b and an image-side lens 1 c.
  • a wavefront formation structure 2 for example in the form of a suitable coherence mask with a two-dimensional, coherence-forming diffraction structure, is introduced into the object plane of the objective 1 as the object structure.
  • An interference generation structure 3 for example in the form of a diffraction grating, is introduced into the image plane as the image structure.
  • the diffraction grating 3 can be arranged laterally movable relative to the coherence mask 2.
  • a downstream imaging optics 4 is arranged such that its object plane lies in the image plane of the imaging system 1 to be measured, so that it images its exit pupil on a detector plane 5 of a downstream, conventional detector and evaluation unit.
  • the wavefront formation structure 2 can be placed in front of the imaging system 1 instead of in the object plane at another object-side location, and likewise the interference generation structure 3 can be positioned on the image side instead of in the image plane at another suitable location after the imaging system 1 to be measured. be sitioned.
  • the use of multi-frequency patterns is proposed for the object-side wavefront formation structure 2 and / or the image-side interference generation structure 3, which have at least two different periodicity lengths in at least one direction and / or in which at least one two-dimensional main pattern which contains periodically arranged main structure fields with a nem or several sub-patterns is combined, which represent a further periodic structure subdivision of structure fields of the main pattern.
  • these grating / mask patterns which combine several periodicity frequencies and / or periodicity orientations, shearing interferograms of different shear distances and shear directions can be obtained simultaneously.
  • phase information of the individual interference systems can be determined separately by suitable design of the multi-frequency pattern, coherence function and evaluation part and possible image errors of the imaging system can be determined from them with high precision by means of wave front reconstruction.
  • the fundamental fact is used that when such multi-frequency patterns are used in lateral shearing interferometry, the lateral resolution of the pupil grid and the orientation of the respective coordinate system are determined via the frequency.
  • FIGS. 2 and 3 illustrate the influence with regard to the lateral resolution of the pupil grid for the case of a larger beam diameter D or a smaller beam diameter d in the system from FIG. 1.
  • FIG. 2 shows pupil rasterization using a two-frequency grating with identical main diffraction directions in the x and y directions.
  • the lines drawn solid in FIG. 2 form a coarser square grid with associated penodicity length a.
  • the coarser grid represented in nien has a penodicity length d in the y-direction which is smaller than its penodicity length c2 in the x-direction.
  • the finer grid is formed by dividing the penodicity length c2 of the coarser grid in the x direction by a factor of 4, i.e. its penodicity length c3 in the x direction is a quarter of the penodicity length c2 of the coarser grid in the x direction and is also smaller than that Penodicity length d of the coarser pattern in the y direction.
  • a suitable, rastered pupil illumination with different periodicity can be achieved.
  • the respective shearing interferograms overlap, but the phase information encoded therein can be separated by suitable phase shifting and application of a calculation method adapted to it, in particular by means of a corresponding Fourier algorithm.
  • Such algorithms are familiar to those skilled in the art as such and therefore do not require any further explanation here.
  • the formation of the spatial coherence function, i.e. the coherence or illumination mask 2 are used as a filter.
  • disruptive fractions can be eliminated or suppressed by suitable measures in the time domain, such as time averaging and fast grid oscillation.
  • the simultaneous measurement of the imaging system 1 with different spatial resolution over its pupil is possible, as is an optimal adaptation of the diffraction grating frequencies to the division of the pupil.
  • Pupil parceling is known to mean the effect that the Illumination intensity in the pupil of the imaging system is not homogeneous, but is dividedled out, as is often the case in microlithography systems, for example, if there is a corresponding division of the pupil of the illumination system due to the construction, which is imaged into the pupil of the projection lens to be measured.
  • the pupil filling can be improved by appropriate diffraction effects on the coherence or illumination mask, ie even with lower beam divergence angles of an upstream lighting system, as are typical, for example, for extreme UV radiation Illumination of the outer pupil area can also be achieved.
  • Fig. 4 illustrates in the left field a multi-frequency pattern in which a checkerboard main pattern is combined with two linear sub-patterns.
  • the main pattern has a checkerboard structure with diagonals running in the x and y directions.
  • This corresponds to two orthogonal grids with the same penodicity length L, which is equal to the length of the diagonals of each chess field.
  • the "black" chess fields are alternately replaced by orthogonal line grid sub-patterns, both of which have the same penodicity length I and of which the lines of one sub-pattern run parallel to the x-direction and the lines of the other sub-pattern run parallel to the y-direction.
  • the diffraction diagram is only used for a better understanding of the diffraction results or the resulting interferograms and is not to scale.
  • the exemplary embodiment shown in FIG. 5 largely corresponds to that of FIG. 5, in that it also contains a main checkerboard pattern with diagonals running in the x and y directions, in which the black fields alternate with two line grid sub-patterns with mutually orthogonal patterns Line directions are replaced which have the same penodicity length I.
  • the penodicity length or grating period of a main pattern with a large “L” and that of a respective sub-pattern with a small “I” are designated, the main pattern periodicity lengths L and the sub-pattern periodicity lengths I each differing in the different examples Can have values.
  • the line gratings of the sub-patterns are oriented at an angle of 45 ° to the x or y direction. This means that the associated axes of the diffraction orders in the main pattern are formed by the x or y axis, whereas those of the two line grating sub-patterns are at an angle of 45 ° to the x or y axis, as in the right partial image of Fig. 5 can be seen.
  • the corresponding, on these bisectors of the x and y axes lie diffraction maxima ⁇ 1.
  • Order for the line grid sub-patterns are correspondingly designated with Bs ⁇ , xy , Bs. ⁇ , xy , Bs xy and Bs- x y .
  • FIG. 4 and 5 are two-dimensional two-frequency patterns
  • FIG. 6 shows an example of a two-dimensional three-frequency pattern.
  • this again consists of a main chessboard pattern with the same penodicity length L in the x and y directions corresponding to the chess field diagonal length and alternately of four line grid subpatterns, two of which match those of FIG. 4 with the x - or y-direction parallel grid lines and the other two correspond to the two line grid sub-patterns of FIG. 5 with grid lines extending at 45 ° to the x or y direction.
  • this leads to a pattern of the diffraction orders which corresponds to the sum of those of FIGS.
  • the black chess fields of the main pattern have been replaced by the fine structures of line grid sub-patterns in the embodiments of FIGS. 4 to 6, it is understood that in FIG alternative embodiments, the white chess fields of the main pattern can instead be filled with sub-pattern fine structures and the black chess fields remain opaque.
  • FIG. 7 shows a further modification in the form of a multi-frequency pattern, in which two orthogonal line grating single-frequency patterns are arranged in a checkerboard fashion.
  • the one alternating checkerboard fields are filled with a line grid pattern with grid lines parallel to the x axis, while the other alternating chess fields are filled with a line grid pattern with grid lines parallel to the y axis.
  • the diffraction patterns corresponding to the main chessboard patterns of FIGS. 4 to 6 disappear in the diffraction diagram, while along the x and y axes the diffraction maxima correspond accordingly form two fine structure line grid patterns.
  • the same periodicity lengths I are selected for both fine structure line grating patterns, alternatively different periodicity lengths are possible.
  • Fig. 8 shows an embodiment of a multi-frequency pattern with a checkerboard arrangement of two orthogonal line grating two-frequency patterns.
  • the checkerboard fields are alternately occupied with two patterns that are rotated by 90 °, that is, orthogonal patterns, which in turn each consist of a rough pattern with three dark and three light lines and a fine pattern, in which each light stripe of the coarser pattern is represented by two dark stripes is divided into three individual light strips.
  • Fig. 9 shows an embodiment of a two-dimensional two-frequency pattern with a checkerboard-shaped main pattern, in which the black chess fields are replaced by a checkerboard-like sub-pattern, whose diagonals and thus diffraction axes are oriented parallel to those of the main pattern, i.e. parallel to the x and y direction.
  • FIG. 10 shows an embodiment which corresponds to that of FIG. 9 with the difference that the checkerboard diagonals and thus the diffraction axes of the checkerboard sub-pattern are rotated by 45 ° with respect to those of the main pattern. This leads to a diffraction diagram which corresponds qualitatively to that of FIG. 5.
  • FIG 11 shows an exemplary embodiment of a multifrequency pattern which corresponds to a combination of the examples of FIGS. 9 and 10, in which the two checkerboard-like subpatterns of FIGS. 9 and 10 are provided in alternating “black” checkerboard areas of the main pattern in the main checkerboard pattern
  • a penodicity length li is selected which is greater than the penodicity length l 2 of the other checkerboard sub-pattern, which leads to a diffraction slide shown in the right partial image of FIG - Gram that corresponds qualitatively to that of Fig. 6.
  • FIG. 12 shows an exemplary embodiment of a two-frequency pattern with a checkerboard-like arrangement of two checkerboard patterns of different frequencies or penodicity lengths.
  • alternating fields of a main chessboard pattern are filled with the penodicity length L of two chessboard patterns of different periodicity lengths, l 2 , one of which is arranged with a chess field diagonal parallel to the main chess board pattern and the other with a chess field diagonal inclined at 45 °, so that it is qualitative the diagram of the 0th and the ⁇ 1 shown in the right partial image of FIG. 12. Diffraction orders results.
  • FIG. 13 shows an exemplary embodiment of a multifrequency pattern with a two-dimensional main pattern consisting of alternating light and dark triangles in combination with a checkerboard sub-pattern which fills the bright triangular fields of the main pattern.
  • the triangular field arrangement of the main pattern generates three diffraction directions rotated by 120 ° with respect to one another, each with the same penodicity length L, one of which lies parallel to the y direction in the xy coordinate system explicitly shown in FIG. is based on a periodic lattice structure in the y direction.
  • the chessboard sub-pattern forms two diffraction directions, each offset by 90 °, in the x and y directions with the same penodicity length I, in that its checkerboard diagonals run in these two directions.
  • FIG. 14 shows a variant of FIG. 13, in which two orthogonal line grating subpatterns are provided for the same triangular field main pattern in the “white” triangular surfaces.
  • the two line grating subpatterns define orthogonal diffraction directions in the x and y directions 14, the same penodicity length I is selected for the two line grating subpatterns in the example of Fig. 14, alternatively different periodicity lengths are of course also possible there is a "white" triangle field of the main pattern by dividing each into four triangles of the same size, congruent to the main pattern triangles, two of which are "filled” with the same line grid sub-pattern.
  • the white main pattern triangular fields can remain free and the black triangular surfaces can be replaced by triangular surfaces which carry the relevant sub-patterns.
  • FIG. 15 illustrates a further multi-frequency pattern, in which a main chessboard pattern with chess field diagonals or diffraction directions in the x and y direction and penodicity length L is provided in combination with a sub-pattern.
  • the sub-pattern is formed by inner light squares in the dark main pattern chess fields and dark squares in the light main pattern chess fields, the square side length of the sub-pattern being one third of that of the main pattern. This leads to the diffraction image shown schematically in the right partial image of FIG. 15.
  • the use of a multi-frequency pattern in the image-side interference generation structure and / or in the object-side wavefront formation structure enables the measurement of a test specimen with different spatial resolutions in a single direction or else simultaneously in two or more different directions.
  • countless other multi-frequency patterns can be used, each of which is distinguished by the fact that they comprise in at least one direction a periodic structure with at least two different periodicity lengths and / or a structure which has at least one includes two-dimensional main pattern with periodically arranged structure fields and one or more sub-patterns, which are formed as a fine structure in structure fields of the main pattern.
  • phase information of the individual interference systems can be determined in a conventional manner separately from the simultaneous shearing interferograms of different shear distances and / or shear directions by suitable design of the image-side interference generation structure, the object-side wavefront formation structure and the evaluation algorithm.
  • supportive measures in the time domain such as time averaging and fast diffraction grating oscillation, and / or an illumination mask functioning as a filter can be used to form the spatial coherence function with different diffraction grating orientations.
  • the invention offers as further advantages the possibility of adapting the diffraction grating frequency to a predetermined division of the pupil illumination, adapting the diffraction grating frequencies to the wavelength of the radiation used, measuring the coherence function and using the periodic sub-pattern.
  • Fine structure for calibrating the phase shifting process in lateral shift interferometry In the latter application, sub-pattern fine structures of the object-side wavefront formation structure are combined with those of the image-side interference generation Structure superimposed in order to record the relative lateral displacement path between the object-side wavefront formation structure and the image-side interference generation structure with high precision.
  • the filling of the pupil of the test specimen can be improved, especially in the case of extreme UV radiation, in that the multi-frequency pattern on the object side diffracts the radiation with a noticeable intensity even into larger radiation angles.
  • the measurement device e.g. as a BIF device can also be integrated into the microlithography system, it goes without saying that the device according to the invention is also suitable for high-precision, spatially resolved measurement of other optical imaging systems across their pupils.
  • the invention encompasses devices for moiré distortion measurement, in each of which suitable moiré structures of the multi-frequency types explained above act as object or image structures, and combined devices which enable measurement both by shearing interferometry and by moiré structure superimposition and to this end contain suitable shearing interferometry and moire structures on the object and image side. Both types of structure can be superimposed or provided in different sub-areas of a respective structure support.

Abstract

L'invention concerne un dispositif de mesure optique d'un système de reproduction, par ex. par détection de front d'onde, par interférométrie différentielle, qui comporte une structure d'objet à disposer côté objet devant le système de reproduction, une structure d'image à disposer côté image après le système de reproduction et une unité de détection et d'évaluation montée en aval de la structure d'image et destinée à détecter une structure de superposition formée de la structure d'objet et de la structure d'image, une évaluation correspondante intervenant ensuite. Selon l'invention, la structure d'image et/ou la structure d'objet comprennent un modèle à plusieurs fréquences qui présente, dans au moins une direction, au moins deux différentes longueurs de périodicité et/ou au moins un modèle principal en deux dimensions, avec des champs structuraux disposés de manière périodique et au moins un modèle secondaire, formé dans des champs structuraux du modèle principal. Ladite invention s'utilise par ex. pour des mesures à résolution locale très précise, des objectifs de projection dans des installations de microlithographie pour structurer des composants à semi-conducteurs.
PCT/EP2003/012207 2002-12-04 2003-11-03 Dispositif de mesure optique d'un systeme de reproduction WO2004051206A1 (fr)

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DE2002158142 DE10258142A1 (de) 2002-12-04 2002-12-04 Vorrichtung zur optischen Vermessung eines Abbildungssystems
DE10258142.8 2002-12-04

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WO2012059912A1 (fr) * 2010-11-04 2012-05-10 Ramot At Tel-Aviv University Ltd. Procédé et dispositif de caractérisation d'un système optique
US20150160073A1 (en) * 2012-05-30 2015-06-11 Nikon Corporation Method and device for measuring wavefront, and exposure method and device
WO2018007211A1 (fr) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Système de mesure par interférométrie de la qualité de formation d'image d'une lentille de projection anamorphique
EP3964809A1 (fr) * 2020-09-02 2022-03-09 Stichting VU Capteur de métrologie de front d'onde et masque correspondant, procédé d'optimisation d'un masque et appareils associés

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DE102005041203A1 (de) * 2005-08-31 2007-03-01 Carl Zeiss Sms Gmbh Vorrichtung und Verfahren zur interferometrischen Messung von Phasenmasken
DE102015226571B4 (de) 2015-12-22 2019-10-24 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Wellenfrontanalyse
JP2023549319A (ja) * 2020-11-13 2023-11-24 エーエスエムエル ネザーランズ ビー．ブイ． 測定システム及びその使用方法

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