WO2004025747A2 - Organisches photovoltaisches bauelement und herstellungsverfahren dazu - Google Patents
Organisches photovoltaisches bauelement und herstellungsverfahren dazu Download PDFInfo
- Publication number
- WO2004025747A2 WO2004025747A2 PCT/DE2003/002930 DE0302930W WO2004025747A2 WO 2004025747 A2 WO2004025747 A2 WO 2004025747A2 DE 0302930 W DE0302930 W DE 0302930W WO 2004025747 A2 WO2004025747 A2 WO 2004025747A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- structuring
- semiconductor layer
- substrate
- electrode
- Prior art date
Links
- 238000013086 organic photovoltaic Methods 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 56
- 239000000463 material Substances 0.000 description 7
- 239000006096 absorbing agent Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the invention relates to an organic photovoltaic component, in particular an organic solar cell.
- a positive electrode typically ITO, Indium Tin Oxide
- the hole-guiding layer which, for example, consists of PEDOT with PSS as anion.
- the adjacent layer is an absorber, typically an organic semiconductor (eg, a mixture of conjugated polymer with fullerene).
- the negative electrode eg Ca / Ag or LiF / Al.
- the individual layers may differ, in particular the electrodes, the conjugated polymer and also the acceptor (PCBM, a soluble methanofullerene).
- the active semiconductor layer (the absorber) is made very thin (typically between 20 nm and 2000 nm) in order to avoid recombination.
- this thin absorber layer is usually not sufficient to completely absorb the incident light. Part of the light is therefore lost (absorbed) or reflected at the back electrode (and decoupled from the front of the solar cell).
- the object of the invention is therefore to reduce these loss processes by the simplest and most cost-effective process step.
- the invention relates to an organic photovoltaic device comprising a substrate, a positive electrode, an organic semiconductor and a negative electrode, wherein the substrate and / or one or more additional transport layer (s) is / are structured between the electrode and the semiconductor layer.
- the subject matter of the invention is a method for structuring the semiconductor layer of a photovoltaic component by maintaining an existing structuring of a lower layer to which the semiconductor layer is applied.
- the substrate is structured so that the electrode and the semiconductor layer follow the structuring and thus the specific absorption of the semiconductor layer is increased.
- the semiconductor layer is applied so that it planarizes the structuring.
- multiple layers underlying the semiconductor layer are patterned.
- Interlayers may also be incorporated into the photovoltaic device to provide a patterned surface onto which the semiconductor layer is deposited.
- the structuring of one or more layers of the photovoltaic element leads to better coupling of light into the solar cell. Therefore, this type of structuring is also called “lighttrapping”.
- organic material and / or “functional polymer” here includes all types of organic, organometallic and / or inorganic plastics, which are referred to in English for example as “plastics.” These are all types of substances Exception of semiconductors, which form the classical diodes (germanium, silicon), and the typical metallic conductor. make sense on organic material as a carbon-containing material is therefore not provided, but is also thought of the widespread use of eg silicones. Furthermore, the term should not be restricted in terms of molecular size, in particular to polymeric and / or oligomeric materials, but it is also quite possible to use "small molecules”.
- light trapping is achieved by a periodic structuring of at least one of the layers of the solar cell.
- the absorber for example by a
- embossing the semiconductor is a critical process step because it can easily damage the sensitive semiconductor layer, but the patterning of the semiconductor layer can be combined with patterning of the substrate and / or an additional transport layer in the substrate Be carried out sense of the invention.
- the upper layer follows the structuring and / or “depicts the structuring upward” only describes the fact that at least part of the lower structuring is traversed upwards, ie either to find the lower structuring partially or completely at the top is.
- the upper structure can certainly also be supplemented by the structuring, so that a completely different structure results.
- the invention should not be limited in any way at this point.
- FIG. 1 shows a layer structure of a photovoltaic component in which the substrate is structured and is planarized again with an additional transport layer and the lower electrode is already applied again to a planar surface.
- FIG. 2 shows a photovoltaic component in which an additional compensating layer for matching the optical properties (matching layer) is applied to the substrate in such a way that the structuring is imaged upward, thereby structuring the electrode layer, which is then planarized by a hole-conducting layer so that the semiconductor layer is deposited on a planar surface.
- FIG. 3 shows a photovoltaic component in which a lower electrode is patterned on a planar substrate, the structuring is penetrated by a hole-conducting layer, and finally the semiconductor layer is applied to a structured surface.
- FIG. 1 shows the substrate 1, which may be a PET film or even a photoresist layer on glass.
- This substrate is patterned and coated by an additional layer 6 of, for example, a high refractive index material, such as TiO 2 , so that the structure passes through and then again with a layer 7 of transparent material, which also comprises a PET film or a photoresist layer Glass can be planarized.
- the standard cell is then processed on this substrate, from bottom to top, first a lower electrode 2, which is designed semitransparent (eg ITO) in the case where the side of the substrate 1 represents the light incident side of the photovoltaic device.
- there is an additional organic electrode 3a for example made of PEDOT, and then the semiconductor layer 4, a second electrode 3b and / or 5.
- FIG. 2 shows a substrate 1 which is patterned and on which a layer 6 of a material with, for example, a high refractive index, which follows the structuring, is applied. Thereupon is the lower electrode 2, thereupon an additional electrode or transport layer 3a, which planarizes the structuring.
- the semiconductor layer 4 is applied to a planar surface.
- the further construction comprises a further electrode or transport layer 3b and the upper electrode 5.
- the material of layer 6 is generally a layer for improved optical properties and / or optical matching, such as a high refractive index layer.
- FIG. 3 shows a substrate 1, which is not structured, thereupon a lower electrode 2, which is patterned, thereupon an additional layer 3a, which follows the structuring and on whose structured surface the semiconductor layer 4 is applied.
- the semiconductor layer 4 planarizes the
- this electrode can also be made of completely reflecting material.
- the invention shows photovoltaic components whose specific absorption of light is increased by the structuring of one or more layers of the component, which leads to an improved coupling.
- the structuring of the layers is carried out without mechanical or thermal loading of the semiconductor layer, so that it remains undamaged.
- the invention proposes, instead of structuring the semiconductor layer, which indeed causes an increase in the specific absorption, but mechanically, chemically and / or physically stresses the semiconductor layer, a structuring of the substrate before the application of the positive or negative electrode and / or structuring an organic transport layer (eg PEDOT) before application of the semiconductor layer.
- the structuring steps relate to the substrate, one of the electrodes and / or one of the additional transport layer (s) but not the semiconductor, so that it remains unloaded.
- structurable substrates would be films or layers of conventional polymers such as PET, PMMA, PC. These films may typically have a film thickness between 10 and 1000 microns, the depth and period of the embossed periodic pattern may be in the 10-1000 nm range, the depth of aperiodic irregular embossed structures may be in the 1 - 500 micron range.
- planarization layers with a high optical refractive index examples include polyimides and / or polymers filled with inorganic nanoparticles (TiO 2).
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/525,058 US20060102891A1 (en) | 2002-09-05 | 2003-09-03 | Organic photovoltaic component and method for production thereof |
EP03794811A EP1535353A2 (de) | 2002-09-05 | 2003-09-03 | Organisches photovoltaisches bauelement und herstellungsverfahren dazu |
JP2004535002A JP2005538556A (ja) | 2002-09-05 | 2003-09-03 | 有機光起電素子およびその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10241204.9 | 2002-09-05 | ||
DE10241204 | 2002-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004025747A2 true WO2004025747A2 (de) | 2004-03-25 |
WO2004025747A3 WO2004025747A3 (de) | 2004-06-24 |
Family
ID=31983900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2003/002930 WO2004025747A2 (de) | 2002-09-05 | 2003-09-03 | Organisches photovoltaisches bauelement und herstellungsverfahren dazu |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060102891A1 (de) |
EP (1) | EP1535353A2 (de) |
JP (1) | JP2005538556A (de) |
CN (1) | CN1682389A (de) |
WO (1) | WO2004025747A2 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007005620A (ja) | 2005-06-24 | 2007-01-11 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
JP2007073717A (ja) * | 2005-09-06 | 2007-03-22 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
WO2008009428A1 (de) * | 2006-07-20 | 2008-01-24 | Leonhard Kurz Stiftung & Co. Kg | Solarzelle auf polymerbasis |
Families Citing this family (11)
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KR101102133B1 (ko) * | 2004-10-27 | 2012-01-02 | 삼성전자주식회사 | 박막 트랜지스터의 제조방법 및 그 방법에 의해서 제조되는 박막 트랜지스터를 포함하는 표시소자 |
JP5417170B2 (ja) * | 2006-05-01 | 2014-02-12 | ウェイク フォレスト ユニバーシティ | 光起電性装置及びそれを含む光電子デバイス |
WO2010060145A1 (en) * | 2008-11-28 | 2010-06-03 | Securency International Pty Ltd | Nanoscale embossing of hetero-junction devices |
US8941006B2 (en) | 2011-02-25 | 2015-01-27 | Fina Technology, Inc. | Apparatus and method for extending polyolefin containing photovoltaic panel life span |
JP5773255B2 (ja) * | 2011-04-28 | 2015-09-02 | 三菱化学株式会社 | 太陽電池モジュール |
TWI430492B (zh) * | 2011-07-21 | 2014-03-11 | Nat Univ Tsing Hua | 具圖案化電極的有機太陽能電池 |
CN102956825B (zh) * | 2011-08-23 | 2016-06-01 | 岑尚仁 | 具图案化电极的有机太阳能电池 |
WO2013142870A1 (en) * | 2012-03-23 | 2013-09-26 | The University Of Akron | Broadband polymer photodetectors using zinc oxide nanowire as an electron-transporting layer |
US9256126B2 (en) | 2012-11-14 | 2016-02-09 | Irresistible Materials Ltd | Methanofullerenes |
JP6293138B2 (ja) * | 2013-06-17 | 2018-03-14 | 株式会社カネカ | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
US9748423B2 (en) * | 2014-01-16 | 2017-08-29 | Fundacio Institut De Ciencies Fotoniques | Photovoltaic device with fiber array for sun tracking |
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2003
- 2003-09-03 JP JP2004535002A patent/JP2005538556A/ja active Pending
- 2003-09-03 CN CNA038211556A patent/CN1682389A/zh active Pending
- 2003-09-03 WO PCT/DE2003/002930 patent/WO2004025747A2/de active Application Filing
- 2003-09-03 US US10/525,058 patent/US20060102891A1/en not_active Abandoned
- 2003-09-03 EP EP03794811A patent/EP1535353A2/de not_active Withdrawn
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JP2007005620A (ja) | 2005-06-24 | 2007-01-11 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
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WO2008009428A1 (de) * | 2006-07-20 | 2008-01-24 | Leonhard Kurz Stiftung & Co. Kg | Solarzelle auf polymerbasis |
Also Published As
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CN1682389A (zh) | 2005-10-12 |
EP1535353A2 (de) | 2005-06-01 |
JP2005538556A (ja) | 2005-12-15 |
US20060102891A1 (en) | 2006-05-18 |
WO2004025747A3 (de) | 2004-06-24 |
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