WO2004017431A1 - Nitride semiconductor led and fabrication method thereof - Google Patents

Nitride semiconductor led and fabrication method thereof Download PDF

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WO2004017431A1
WO2004017431A1 PCT/KR2003/001668 KR0301668W WO2004017431A1 WO 2004017431 A1 WO2004017431 A1 WO 2004017431A1 KR 0301668 W KR0301668 W KR 0301668W WO 2004017431 A1 WO2004017431 A1 WO 2004017431A1
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gan
layer
gaι
nitride semiconductor
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Suk Hun Lee
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LG Innotek Co Ltd
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Priority to US10/517,818 priority Critical patent/US7615772B2/en
Priority to AU2003257717A priority patent/AU2003257717A1/en
Publication of WO2004017431A1 publication Critical patent/WO2004017431A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Definitions

  • the present invention relates to a nitride semiconductor, and more particularly, to a GaN-based nitride semiconductor light emitting device (LED) and a fabrication method thereof.
  • LED light emitting device
  • a GaN-based nitride semiconductor is applied to electronic devices that are high-speed switching and high power devices such as optic elements of blue/green LEDs, MESFET, HEMT, etc.
  • the blue/green LED is under a state in which mass-production has been already progressed and a global sale is being exponentially increased.
  • the above-mentioned conventional GaN-based nitride semiconductor light emitting device is grown-up usually on a sapphire substrate or a SiC substrate. Further, at a low growth temperature, an Al y Gax- y polycrystalline layer is grown-up on the sapphire substrate or the SiC substrate as a buffer layer. After that, at a high temperature, an undoped GaN layer, an n- GaN layer doped with silicon over a lxl0 17 /c ⁇ concentration or a combined n-GaN layer thereof is formed on the buffer layer as a first electrode layer.
  • an Mg-GaN layer as a second electrode layer to complete the GaN-based nitride semiconductor LED. Also, a light emitting layer (multi-quanturn well active layer) is sandwiched between the first electrode layer and the second electrode layer.
  • the above-constructed conventional nitride semiconductor LED has a crystal defect of a very high value of about lo 8 / ⁇ or so, which is generated from an interface between the substrate and the buffer layer.
  • LED has a drawback in that an electric characteristic, specifically, leakage current under a reverse bias condition is increased, resulting in a fatal influence to the reliability of the device.
  • the conventional nitride semiconductor LED has another drawback in that the crystal defect generated from the interface between the buffer layer and the substrate deteriorates crystallinity of the light emitting layer thereby lowering the light emitting efficiency.
  • An object of the present invention is to provide a nitride semiconductor LED and a fabrication method thereof for reducing a crystal defect generated due to a difference in a thermal expansion coefficient and a lattice constant between a substrate and a GaN-based single crystalline layer grown-up on the substrate, and improving crystallinity of the GaN-based single crystalline layer, to thereby improve the performance of the device and assure the reliability.
  • a nitride semiconductor LED including: a substrate; a GaN- based buffer layer formed on the substrate; AlyGai.yN/GaN short period superlattice (SPS) layers formed on the GaN- based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium- doped GaN layer interposed therebetween (Here, O ⁇ y ⁇ l) • a first electrode layer of an n-GaN layer formed on the upper Al y Ga ⁇ -yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.
  • SPS short period superlattice
  • a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; a first electrode layer of an n + -GaN layer formed on the GaN-based buffer layer and containing a high concentration of dopants; an n-GaN layer formed on the first electrode layer and containing a low concentration of dopants; an active layer formed on the n-GaN layer; and a second electrode layer of a p-GaN layer formed on the active layer.
  • a fabrication method of a nitride semiconductor LED including the steps of: growing-up a GaN-based buffer layer on a substrate; forming Al y Ga ⁇ _ y N/GaN short period superlattice (SPS) layers on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, O ⁇ y ⁇ l); forming a first electrode layer of an n + -GaN layer containing a high concentration of dopants, on the upper Al y Ga!_ y N/GaN SPS layer; forming an active layer on the first electrode layer; and forming a second electrode layer of an p-GaN layer on the active layer.
  • SPS short period superlattice
  • FIG. 1 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a first embodiment of the present invention
  • FIG. 2 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a second embodiment of the present invention.
  • FIG. 3 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a third embodiment of the present invention.
  • FIG. 1 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a first embodiment of the present invention.
  • the inventive nitride semiconductor LED includes a substrate 101; a GaN-based buffer layer 102 formed on the substrate 101; a first electrode layer of an n-GaN layer 105 formed on the GaN- based buffer layer 102; an active layer 120 formed on the first electrode layer; and a second electrode layer of a p-GaN layer 110 formed on the active layer 120.
  • the GaN-based buffer layer 102 can be formed having a triple-structured Al y In x Ga ⁇ - x , y N/In x Ga ⁇ - x N/GaN (Here, O ⁇ x ⁇ l, O ⁇ y ⁇ l) laminated, a double- structured In x Ga ⁇ _ x N/GaN (Here, O ⁇ x ⁇ l) laminated, or a super-lattice-structured (SLS) In x Ga ⁇ _ x N/GaN (Here, O ⁇ x ⁇ l) laminated.
  • SLS super-lattice-structured
  • the inventive nitride semiconductor LED on the substrate 101 (for example, a sapphire substrate or a SiC substrate) is grown-up the GaN-based nitride semiconductor as the GaN-based buffer layer 102, the n-GaN layer 105 is formed as the first electrode layer, and an atomic g-doped p-GaN layer 110 is formed as the second electrode layer. Additionally, the active layer 120 having an InGaN/GaN multi-quantum well structure is formed in a sandwich combination structure between the first electrode layer of the n-GaN layer 105 and the second electrode layer of the p-GaN layer 110.
  • the active layer 120 can be formed with an In x Ga ⁇ _ x N well layer 106, an In x Ga ⁇ _ x N/GaN barrier layer 107, an In x Ga ⁇ _ x N well layer 108 and an In x Ga 1-x N/GaN barrier layer 109. Further, between the GaN-based buffer layer 102 and the first electrode layer of the n-GaN layer 105 can be also additionally formed an undoped GaN layer or an indium-doped GaN layer 103 and 104.
  • a metal organic chemical vapor deposition (MOCVD) equipment is used such that it is, in a growth pressure of 100-700torr and at a low temperature of 500- 800"C, grown-up to have a thickness of below 700 A in a laminated structure such as the triple-structured Al y In x Ga ⁇ _ x , y N/ln x Ga ⁇ -. x N/GaN, the double-structured In x Ga ⁇ _ x N/GaN or the super-lattice-structured (SLS) In x Ga ⁇ _ x N/GaN, etc.
  • MOCVD metal organic chemical vapor deposition
  • the MOCVD equipment is used having a carrier gas of H2 , N2 supplied while a source gas of T Ga, TMIn, TMAl introduced and simultaneously a NH 3 gas introduced.
  • the n-GaN layer 105 is used as the first electrode layer and has a carrier concentration of over lxl ⁇ 18 /c ⁇ f.
  • FIG. 2 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a second embodiment of the present invention.
  • the GaN-based buffer layer 202 having the triple-structured Al y In x Ga ⁇ _ x/y N/In x Ga ⁇ - x N/GaN (Here, O ⁇ x ⁇ l, O ⁇ y ⁇ l), the double-structured In x Ga ! _ x N/GaN (Here, O ⁇ x ⁇ l), or the super-lattice-structured (SLS) In x Ga ⁇ _ x N/GaN (Here, O ⁇ x ⁇ l).
  • the undoped GaN layer or the indium-doped GaN layer 203 is formed on the GaN-based buffer layer 202.
  • Al y Ga ⁇ - y N/GaN SPS layers 204 and 206 are formed on the undoped GaN layer or the indium- doped GaN layer 203 in a sandwich structure of upper and lower parts having the undoped GaN layer or the indium-doped GaN layer 205 interposed therebetween.
  • the n-GaN layer 207 As the first electrode layer.
  • the first electrode layer of the n-GaN layer 207 has the carrier concentration of over lxl0 18 /cn, and has the silicon used as the dopant.
  • the nitride semiconductor LED includes, as a light emitting layer, an active layer 220 of In x Ga x - x N/GaN.
  • the active layer 220 can be formed in the multi-quantum well structure having an In x Ga ⁇ -x N well layer 208, an In x Ga ⁇ - x N/GaN barrier layer 209, an In x Ga ⁇ - x N well layer 210 and an In x Ga ⁇ _ x N/GaN barrier layer 211.
  • the In x Ga ⁇ - x N well layers 208 and 210 and the In x Ga ⁇ - x N/GaN barrier layers 209 and 211 are grown-up to respectively have a thickness of less than 70 A at a 700- 800°C growth temperature and in a N 2 atmosphere.
  • the growth temperature is increased to a range of 900-1020 °C and a Cp 2 Mg doping gas is introduced so that a p-GaN layer 212 is grown-up in a 0.01-0.5/ ⁇ m thickness to be used as a second electrode layer, and at this time, a mixed gas atmosphere of NH 3 , H 2 as atmosphere gas is maintained with a high purity degree .
  • the inventive nitride semiconductor LED includes the Al y Ga ⁇ - y N/GaN SPS layers 204 and 206. Accordingly, in order to evaluate an influence of the sandwich-structured Al y Ga ⁇ - y N/GaN SPS layers 204 and 206 upon a crystallinity variation, a structure is grown-up not including the In x Ga ⁇ _ x N/GaN multi-quantum well structure of the active layer 220 and the second electrode layer of the p-GaN layer 212, and then a DC-XRD analysis is performed.
  • a forward bias characteristic such as an operation voltage (VF) and the brightness, etc. is not varied.
  • VF operation voltage
  • a conventional reverse bias breakdown voltage is increased from "-15V” to over “-19V” so that the current leakage is improved.
  • the above-improved characteristic is caused by an effect of effectively reducing a dislocation formed in the substrate 201 and the GaN-based buffer layer 202 to be intruded into surface. And accordingly, it is caused by the result that the In x Ga ⁇ - x N/GaN multi-quantum well structure of the active layer 220 and the p-GaN layer 212 are improved in their crystallinities .
  • the present invention provides, for more improving the characteristic, the nitride semiconductor LED having the following structure.
  • FIG. 3 is a sectional view illustrating a schematic construction of the nitride semiconductor LED according to a third embodiment of the present invention.
  • nitride semiconductor LED on a first electrode layer of a high concentration doped n + -GaN layer 307 is additionally grown-up a low concentration silicon of about lxl0 17 /c ⁇ rf doped n-GaN layer 308. Accordingly, in an interface of the In x Ga ! _ x N well layer 309 grown-up first in the In x Ga ⁇ _ x N/GaN multi-quantum well structured active layer 320 grown-up at a relatively low growth temperature, a stress can be suppressed and crystallinity can be improved.
  • the n-GaN layer 308 is formed with a semi-insulating GaN layer, it can also function as a role of a current prevention layer for effectively cutting off the current leakage which is, at the time of reverse bias, reversely intruded in the light emitting layer (multi-quantum well active layer) .
  • a current prevention layer for effectively cutting off the current leakage which is, at the time of reverse bias, reversely intruded in the light emitting layer (multi-quantum well active layer) .
  • the nitride semiconductor LED is reversely biased, its crystallinity deterioration results in the current leakage. Accordingly, for preventing this, it can be formed in a structure having a thin semi-insulating GaN layer or a low concentration of below lxl0 18 /c ⁇ f doped n-GaN layer inserted.
  • the inventive nitride semiconductor LED includes a substrate 301; a GaN-based buffer layer 302 formed on the substrate 301; a first electrode layer of an n + -GaN layer 307 formed on the GaN-based buffer layer 302 and containing a high concentration of dopants; an n-GaN layer 308 formed on the first electrode layer and containing a low concentration of dopants; an active layer 320 formed on the n-GaN layer 308; and a second electrode layer of a p-GaN layer 313 formed on the active layer 320.
  • the GaN- based buffer layer 302 having the triple-structured Alyln x Gai-j c yN/In x Gai- x N/GaN (Here, O ⁇ x ⁇ l, O ⁇ y ⁇ l), the double-structured In x Ga ⁇ - x N/GaN (Here, O ⁇ x ⁇ l) or the super-lattice-structured (SLS) In x Ga ⁇ _ x N/GaN (Here, O ⁇ x ⁇ l). Additionally, on the GaN-based buffer layer 302 is formed an undoped GaN layer or an indium-doped GaN layer 303.
  • the undoped GaN layer or the indium- doped GaN layer 303 are formed Al y Ga ⁇ - y N/GaN SPS layers 304 and 306 in a sandwich structure of upper and lower parts having the indium-doped GaN layer 305 interposed therebetween.
  • the n + -GaN layer 307 is formed on the upper Al y Ga ⁇ _ y N/GaN SPS layer 306 as the first electrode layer.
  • the first electrode layer of the n + -GaN layer 307 has the carrier concentration of over lxl0 18 /cn and has silicon used as the dopant .
  • the nitride semiconductor LED includes, as the light emitting layer, the active layer 320 of In x Gax- x N/GaN.
  • the active layer 320 can be formed to have the multi-quantum well structure having an In x Ga ⁇ _ x N well layer 309, an In x Ga ⁇ - x N/GaN barrier layer 310, an In x Ga ⁇ - x N well layer 311 and an In x Ga ! - x N/GaN barrier layer 312.
  • a N 2 gas is mixed and used as the carrier gas.
  • a thickness regularity doped and grown-up is improved.
  • an operation voltage and a reverse breakdown voltage can be obtained having a very regular dispersion distribution in a wafer.
  • the inventive semiconductor LED and its fabrication method can reduce the crystal defect caused by the difference of the thermal expansion coefficient and the lattice constant in the substrate and the GaN-based single crystalline layer grown-up on the substrate, and can improve the GaN-based single crystalline layer in its crystallinity. Accordingly, the present invention has an advantage in which the nitride semiconductor LED can be improved in its performance and assured in its reliability.

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Abstract

Disclosed a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; AlyGa1-yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, 0≤y≤1); a first electrode layer of an n-GaN layer formed on the upper AlyGa1-yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.

Description

NITRIDE SEMICONDUCTOR LED AND FABRICATION METHOD THEREOF
Technical Field
The present invention relates to a nitride semiconductor, and more particularly, to a GaN-based nitride semiconductor light emitting device (LED) and a fabrication method thereof.
Background Art Generally, a GaN-based nitride semiconductor is applied to electronic devices that are high-speed switching and high power devices such as optic elements of blue/green LEDs, MESFET, HEMT, etc. In particular, the blue/green LED is under a state in which mass-production has been already progressed and a global sale is being exponentially increased.
The above-mentioned conventional GaN-based nitride semiconductor light emitting device (LED) is grown-up usually on a sapphire substrate or a SiC substrate. Further, at a low growth temperature, an AlyGax-y polycrystalline layer is grown-up on the sapphire substrate or the SiC substrate as a buffer layer. After that, at a high temperature, an undoped GaN layer, an n- GaN layer doped with silicon over a lxl017/cπ concentration or a combined n-GaN layer thereof is formed on the buffer layer as a first electrode layer. Additionally, on an Mg-AlGaN cladding layer is formed an Mg-GaN layer as a second electrode layer to complete the GaN-based nitride semiconductor LED. Also, a light emitting layer (multi-quanturn well active layer) is sandwiched between the first electrode layer and the second electrode layer.
However, the above-constructed conventional nitride semiconductor LED has a crystal defect of a very high value of about lo8/^ or so, which is generated from an interface between the substrate and the buffer layer.
Accordingly, the conventional nitride semiconductor
LED has a drawback in that an electric characteristic, specifically, leakage current under a reverse bias condition is increased, resulting in a fatal influence to the reliability of the device.
Also, the conventional nitride semiconductor LED has another drawback in that the crystal defect generated from the interface between the buffer layer and the substrate deteriorates crystallinity of the light emitting layer thereby lowering the light emitting efficiency.
Disclosure of the Invention
An object of the present invention is to provide a nitride semiconductor LED and a fabrication method thereof for reducing a crystal defect generated due to a difference in a thermal expansion coefficient and a lattice constant between a substrate and a GaN-based single crystalline layer grown-up on the substrate, and improving crystallinity of the GaN-based single crystalline layer, to thereby improve the performance of the device and assure the reliability. To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, there is provided a nitride semiconductor LED including: a substrate; a GaN- based buffer layer formed on the substrate; AlyGai.yN/GaN short period superlattice (SPS) layers formed on the GaN- based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium- doped GaN layer interposed therebetween (Here, O≤y≤l) • a first electrode layer of an n-GaN layer formed on the upper AlyGaι-yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.
According to another aspect of the present invention, there is provided a nitride semiconductor LED, including: a substrate; a GaN-based buffer layer formed on the substrate; a first electrode layer of an n+-GaN layer formed on the GaN-based buffer layer and containing a high concentration of dopants; an n-GaN layer formed on the first electrode layer and containing a low concentration of dopants; an active layer formed on the n-GaN layer; and a second electrode layer of a p-GaN layer formed on the active layer.
According to still another aspect of the present invention, there is provided a fabrication method of a nitride semiconductor LED, the method including the steps of: growing-up a GaN-based buffer layer on a substrate; forming AlyGaι_yN/GaN short period superlattice (SPS) layers on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, O≤y≤l); forming a first electrode layer of an n+-GaN layer containing a high concentration of dopants, on the upper AlyGa!_yN/GaN SPS layer; forming an active layer on the first electrode layer; and forming a second electrode layer of an p-GaN layer on the active layer.
Brief Description of the Drawings FIG. 1 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a first embodiment of the present invention;
FIG. 2 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a second embodiment of the present invention; and
FIG. 3 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a third embodiment of the present invention.
Best Mode for Carrying Out the Invention
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to accompanying drawings. FIG. 1 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a first embodiment of the present invention.
Referring to FIG. 1, the inventive nitride semiconductor LED includes a substrate 101; a GaN-based buffer layer 102 formed on the substrate 101; a first electrode layer of an n-GaN layer 105 formed on the GaN- based buffer layer 102; an active layer 120 formed on the first electrode layer; and a second electrode layer of a p-GaN layer 110 formed on the active layer 120. Herein, the GaN-based buffer layer 102 can be formed having a triple-structured AlyInxGaι-x,yN/InxGaι- xN/GaN (Here, O≤x≤l, O≤y≤l) laminated, a double- structured InxGaι_xN/GaN (Here, O≤x≤l) laminated, or a super-lattice-structured (SLS) InxGaι_xN/GaN (Here, O≤x≤l) laminated.
In other words, in the inventive nitride semiconductor LED, on the substrate 101 (for example, a sapphire substrate or a SiC substrate) is grown-up the GaN-based nitride semiconductor as the GaN-based buffer layer 102, the n-GaN layer 105 is formed as the first electrode layer, and an atomic g-doped p-GaN layer 110 is formed as the second electrode layer. Additionally, the active layer 120 having an InGaN/GaN multi-quantum well structure is formed in a sandwich combination structure between the first electrode layer of the n-GaN layer 105 and the second electrode layer of the p-GaN layer 110.
Here, the active layer 120 can be formed with an InxGaι_xN well layer 106, an InxGaι_xN/GaN barrier layer 107, an InxGaι_xN well layer 108 and an InxGa1-xN/GaN barrier layer 109. Further, between the GaN-based buffer layer 102 and the first electrode layer of the n-GaN layer 105 can be also additionally formed an undoped GaN layer or an indium-doped GaN layer 103 and 104.
Additionally, in a process of growing-up the GaN- based buffer layer 102 on the substrate 101 at a low temperature, a metal organic chemical vapor deposition (MOCVD) equipment is used such that it is, in a growth pressure of 100-700torr and at a low temperature of 500- 800"C, grown-up to have a thickness of below 700 A in a laminated structure such as the triple-structured AlyInxGaι_x,yN/lnxGaι-.xN/GaN, the double-structured InxGaι_ xN/GaN or the super-lattice-structured (SLS) InxGaι_ xN/GaN, etc.
At this time, for growing-up the GaN-based buffer layer 102 at the low temperature, the MOCVD equipment is used having a carrier gas of H2 , N2 supplied while a source gas of T Ga, TMIn, TMAl introduced and simultaneously a NH3 gas introduced.
Further, in a high temperature process of growing- up the GaN-based single crystalline layer, on the GaN- based buffer layer 102 is, at a 900-1100°C temperature, the undoped GaN layer or the indium-doped GaN layer 103 and 104, and on the result thereof is again formed an atomic silicon-doped n-GaN layer 105 (over a lxl018/cιrf concentration) . Herein, the n-GaN layer 105 is used as the first electrode layer and has a carrier concentration of over lxlθ18/cπf. At this time, for growing-up the GaN-based single crystalline layer, the MOCVD equipment is used having the source gas of TMGa, TMIn supplied at the 900-1100 °C temperature to grow-up the GaN-based single crystalline layer. Additionally, the TMGa, TMIn source gas is introduced for supplying at the 100-700torr pressure and a 0.1-700 μmol/min flow rate to grow-up the GaN-based single crystalline layer. At this time, a SiH gas is used as a dopant gas for doping a silicon atom. On the other hand, FIG. 2 is a sectional view illustrating a schematic construction of a nitride semiconductor LED according to a second embodiment of the present invention.
Referring to FIG. 2, in the inventive nitride semiconductor LED, on the substrate 201 (for example, the sapphire substrate or the SiC substrate) is provided the GaN-based buffer layer 202 having the triple-structured AlyInxGaι_x/yN/InxGaι-xN/GaN (Here, O≤x≤l, O≤y≤l), the double-structured InxGa!_xN/GaN (Here, O≤x≤l), or the super-lattice-structured (SLS) InxGaι_xN/GaN (Here, O≤x≤l). Additionally, on the GaN-based buffer layer 202 is formed the undoped GaN layer or the indium-doped GaN layer 203.
Further, on the undoped GaN layer or the indium- doped GaN layer 203 are formed AlyGaι-yN/GaN SPS layers 204 and 206 in a sandwich structure of upper and lower parts having the undoped GaN layer or the indium-doped GaN layer 205 interposed therebetween.
On the upper AlyGaι-yN/GaN SPS layer 206 is formed the n-GaN layer 207 as the first electrode layer. Here, the first electrode layer of the n-GaN layer 207 has the carrier concentration of over lxl018/cn, and has the silicon used as the dopant.
Additionally, the nitride semiconductor LED includes, as a light emitting layer, an active layer 220 of InxGax-xN/GaN. Here, the active layer 220 can be formed in the multi-quantum well structure having an InxGaι-xN well layer 208, an InxGaχ-xN/GaN barrier layer 209, an InxGaι-xN well layer 210 and an InxGaι_xN/GaN barrier layer 211.
In the present invention, when the active layer 220 is formed, the InxGaι-xN well layers 208 and 210 and the InxGaι-xN/GaN barrier layers 209 and 211 are grown-up to respectively have a thickness of less than 70 A at a 700- 800°C growth temperature and in a N2 atmosphere. After that, the growth temperature is increased to a range of 900-1020 °C and a Cp2Mg doping gas is introduced so that a p-GaN layer 212 is grown-up in a 0.01-0.5/^m thickness to be used as a second electrode layer, and at this time, a mixed gas atmosphere of NH3, H2 as atmosphere gas is maintained with a high purity degree .
At this time, as shown in FIG. 2, the inventive nitride semiconductor LED includes the AlyGaχ-yN/GaN SPS layers 204 and 206. Accordingly, in order to evaluate an influence of the sandwich-structured AlyGaι-yN/GaN SPS layers 204 and 206 upon a crystallinity variation, a structure is grown-up not including the InxGaι_xN/GaN multi-quantum well structure of the active layer 220 and the second electrode layer of the p-GaN layer 212, and then a DC-XRD analysis is performed.
As a result of the above DC-XRD analysis, in case of a conventional nitride semiconductor having an undoped GaN/n-GaN structure as the buffer layer, a FWHM (full- width half-maximum) value of about 290 arcsec is obtained, but in case of having the inventive structure of FIG. 2, a FWHM value of about 250 arcsec is obtained. Considering the above, in case of having the sandwich- structured AlyGaι_yN/GaN SPS layers 204 and 206 as in the present invention, it can be appreciated that the crystallinity is improved.
Furthermore, as a result of analyzing an electrical characteristic of the nitride semiconductor LED having the structure of FIG. 2, a forward bias characteristic such as an operation voltage (VF) and the brightness, etc. is not varied. However, it can be appreciated that, when the reverse bias is applied, a conventional reverse bias breakdown voltage is increased from "-15V" to over "-19V" so that the current leakage is improved.
The above-improved characteristic is caused by an effect of effectively reducing a dislocation formed in the substrate 201 and the GaN-based buffer layer 202 to be intruded into surface. And accordingly, it is caused by the result that the InxGaι-xN/GaN multi-quantum well structure of the active layer 220 and the p-GaN layer 212 are improved in their crystallinities .
On the other hand, the present invention provides, for more improving the characteristic, the nitride semiconductor LED having the following structure.
FIG. 3 is a sectional view illustrating a schematic construction of the nitride semiconductor LED according to a third embodiment of the present invention.
As shown in FIG. 3, in the inventive nitride semiconductor LED, on a first electrode layer of a high concentration doped n+-GaN layer 307 is additionally grown-up a low concentration silicon of about lxl017/cιrf doped n-GaN layer 308. Accordingly, in an interface of the InxGa!_xN well layer 309 grown-up first in the InxGaι_ xN/GaN multi-quantum well structured active layer 320 grown-up at a relatively low growth temperature, a stress can be suppressed and crystallinity can be improved.
Here, in case the n-GaN layer 308 is formed with a semi-insulating GaN layer, it can also function as a role of a current prevention layer for effectively cutting off the current leakage which is, at the time of reverse bias, reversely intruded in the light emitting layer (multi-quantum well active layer) . Additionally describing, in case the nitride semiconductor LED is reversely biased, its crystallinity deterioration results in the current leakage. Accordingly, for preventing this, it can be formed in a structure having a thin semi-insulating GaN layer or a low concentration of below lxl018/cιτf doped n-GaN layer inserted.
In other words, the inventive nitride semiconductor LED includes a substrate 301; a GaN-based buffer layer 302 formed on the substrate 301; a first electrode layer of an n+-GaN layer 307 formed on the GaN-based buffer layer 302 and containing a high concentration of dopants; an n-GaN layer 308 formed on the first electrode layer and containing a low concentration of dopants; an active layer 320 formed on the n-GaN layer 308; and a second electrode layer of a p-GaN layer 313 formed on the active layer 320.
Here, on the substrate 301 is provided the GaN- based buffer layer 302 having the triple-structured AlylnxGai-jcyN/InxGai-xN/GaN (Here, O≤x≤l, O≤y≤l), the double-structured InxGaι-xN/GaN (Here, O≤x≤l) or the super-lattice-structured (SLS) InxGaι_xN/GaN (Here, O≤x≤l). Additionally, on the GaN-based buffer layer 302 is formed an undoped GaN layer or an indium-doped GaN layer 303. Further, on the undoped GaN layer or the indium- doped GaN layer 303 are formed AlyGaι-yN/GaN SPS layers 304 and 306 in a sandwich structure of upper and lower parts having the indium-doped GaN layer 305 interposed therebetween. On the upper AlyGaι_yN/GaN SPS layer 306 is formed the n+-GaN layer 307 as the first electrode layer. Here, the first electrode layer of the n+-GaN layer 307 has the carrier concentration of over lxl018/cn and has silicon used as the dopant .
Additionally, the nitride semiconductor LED includes, as the light emitting layer, the active layer 320 of InxGax-xN/GaN. Here, the active layer 320 can be formed to have the multi-quantum well structure having an InxGaι_xN well layer 309, an InxGaχ-xN/GaN barrier layer 310, an InxGaι-xN well layer 311 and an InxGa!-xN/GaN barrier layer 312.
On the other hand, in a fabrication method of the nitride semiconductor LED according to the present invention, when the undoped GaN layer and the indium- doped GaN layer 305 and 306, and the first electrode layer of the n+-GaN layer 307 are grown-up, besides a high purity degree of NH3 and H2 carrier gases, a N2 gas is mixed and used as the carrier gas. In the above- processed case, a thickness regularity doped and grown-up is improved. Additionally, from analysis of a forward and reverse electrical characteristic, an operation voltage and a reverse breakdown voltage can be obtained having a very regular dispersion distribution in a wafer.
Industrial Applicability
As described above, the inventive semiconductor LED and its fabrication method can reduce the crystal defect caused by the difference of the thermal expansion coefficient and the lattice constant in the substrate and the GaN-based single crystalline layer grown-up on the substrate, and can improve the GaN-based single crystalline layer in its crystallinity. Accordingly, the present invention has an advantage in which the nitride semiconductor LED can be improved in its performance and assured in its reliability.

Claims

Claims
1. A nitride semiconductor LED, comprising: a substrate; a GaN-based buffer layer formed on the substrate;
AlyGai-yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower layers having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (where, O≤y≤l); a first electrode layer of an n-GaN layer formed on the upper AlyGaχ-yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.
2. The nitride semiconductor LED of claim 1, wherein the GaN-based buffer layer has a triple- structured AlyInxGaι_x,yN/InxGaι-xN/GaN laminated (Here, O≤x≤l, o≤y≤l), a double- structured InxGaι_xN/GaN laminated (Here, o≤x≤l), or a super-lattice-structured (SLS) InxGaι_xN/GaN laminated (Here, O≤x≤l).
3. The nitride semiconductor LED of claim 1, further comprising the undoped GaN layer or the indium- doped GaN layer on the GaN-based buffer layer.
4. A nitride semiconductor LED, comprising: a substrate; a GaN-based buffer layer formed on the substrate; an undoped GaN layer or an indium-doped GaN layer formed on the GaN-based buffer layer;
Figure imgf000014_0001
short period superlattice (SPS) layers formed on the undoped GaN layer or the indium-doped GaN layer, in a sandwich structure of upper and lower layers having the undoped GaN layer or the indium-doped GaN layer interposed therebetween (Here, O≤y≤l); a first electrode layer of an n+-GaN layer formed on the upper AlyGaι_yN/GaN SPS layer and containing a high concentration of dopants; an n-GaN layer formed on the first electrode layer and containing a low concentration of dopants; an active layer formed on the n-GaN layer; and a second electrode layer of a p-GaN layer formed on the active layer.
5. The nitride semiconductor LED of claim 4 , wherein the GaN-based buffer layer has a triple- structured AlyInxGaι-x/yN/lnxGaι-xN/GaN laminated (Here, O≤x≤l, o≤y≤l), a double-structured InxGaι-xN/GaN laminated (Here, O≤x≤l), or a super-lattice-structured (SLS) InxGa!-xN/GaN laminated (Here, O≤x≤l).
6. A nitride semiconductor LED, comprising: a substrate; a GaN-based buffer layer formed on the substrate ,- a first electrode layer of an n+-GaN layer formed on the GaN-based buffer layer and containing a high concentration of dopants; an n-GaN layer formed on the first electrode layer and containing a low concentration of dopants; an active layer formed on the n-GaN layer; and a second electrode layer of a p-GaN layer formed on the active layer.
7. The nitride semiconductor LED of claim 6, wherein the dopant concentration of the n+-GaN layer is more than lxl018/cm\
8. The nitride semiconductor LED of claim 6, wherein the dopant concentration of the n-GaN layer is less than IxlO18/^.
9. The nitride semiconductor LED of claim 6, wherein the dopant concentration of the n-GaN layer is lxl017/cιrf.
10. The nitride semiconductor LED of claim 6, wherein the GaN-based buffer layer has a triple- structured AlyInxGaι-x,yN/InxGaι-xN/GaN laminated (Here, O≤x≤l, o≤y≤l), a double-structured InxGaι_xN/GaN laminated (Here, O≤x≤l), or a super-lattice-structured (SLS) InxGaι-xN/GaN laminated (Here, O≤x≤l).
11. The nitride semiconductor LED of claim 6, further comprising AlyGaι-yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, O≤y≤l).
12. A fabrication method of a nitride semiconductor LED, the method comprising the steps of: growing-up a GaN-based buffer layer on a substrate; forming AlyGaχ_yN/GaN short period superlattice (SPS) layers on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, O≤y≤l); forming a first electrode layer of an n+-GaN layer containing a high concentration of dopants, on the upper AlyGaχ_yN/GaN SPS layer; forming an active layer on the first electrode layer; and forming a second electrode layer of an p-GaN layer on the active layer.
13. The fabrication method of claim 12, further comprising the step of forming an n-GaN layer containing a low concentration of dopants, between the first electrode layer of the n+-GaN layer and the active layer.
14. The fabrication method of claim 12, wherein the GaN-based buffer layer is, using a MOCVD equipment, grown-up to have a 50-800 A thickness at a 500-800°C temperature and in an atmosphere having H2 and N2 carrier gases supplied while having TMGa, TMIn, TMAl source gas introduced and simultaneously having NH3 gas introduced.
15. The fabrication method of claim 12, wherein the GaN-based buffer layer is grown-up with a 5-
300Umol/min flow rate of the TMGa, TMIn, TMAl source gas and a 100-700torr growth pressure.
16. The fabrication method of claim 12, wherein the GaN-based buffer layer has a triple-structured
AlyInxGaι-x,yN/lnxGaι-xN/GaN laminated (Here, O≤x≤l, O≤y≤l), a double-structured InxGaι-xN/GaN laminated (Here, O≤x≤l), or a super-lattice-structured (SLS) InxGaι-xN/GaN laminated (Here, O≤x≤l).
17. The fabrication method of claim 12, further comprising the step of forming an undoped GaN layer or an indium-doped GaN layer on the GaN-based buffer layer.
18. The fabrication method of claim 12, wherein the dopant concentration of the n+-GaN layer is more than lxl018/cm\
19. The fabrication method of claim 13, wherein the dopant concentration of the n-GaN layer is lxl017/cιτf.
20. The fabrication method of claim 13, wherein the n-GaN layer is formed with a semi-insulating layer.
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Cited By (10)

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Publication number Priority date Publication date Assignee Title
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Publication number Priority date Publication date Assignee Title
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JP2007158132A (en) * 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Group III nitride compound semiconductor device and method for manufacturing the same
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US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
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TWI557936B (en) 2010-04-30 2016-11-11 美國波士頓大學信託會 High-efficiency ultraviolet light-emitting diode with variable structure position
US20120126239A1 (en) * 2010-11-24 2012-05-24 Transphorm Inc. Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
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US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
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US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
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US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
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WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
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JP6888013B2 (en) 2016-01-15 2021-06-16 トランスフォーム テクノロジー，インコーポレーテッド Enhancement Mode Group III Nitride Devices with AL (1-x) Si (x) O-Gate Insulators
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
WO2019113815A1 (en) * 2017-12-13 2019-06-20 深圳前海小有技术有限公司 Semiconductor structure and manufacturing process thereof
US10516076B2 (en) 2018-02-01 2019-12-24 Silanna UV Technologies Pte Ltd Dislocation filter for semiconductor devices
US11162189B2 (en) * 2018-03-02 2021-11-02 Dexerials Corporation Semiconductor substrate, gallium nitride single crystal, and method for producing gallium nitride single crystal

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254733A (en) * 1994-01-28 1995-10-03 Nichia Chem Ind Ltd Gallium nitride-based compound semiconductor light emitting device and electrode forming method thereof
JPH07302929A (en) * 1994-03-08 1995-11-14 Sumitomo Chem Co Ltd Group 3-5 compound semiconductor and light emitting device
JPH09129925A (en) * 1995-10-31 1997-05-16 Toyoda Gosei Co Ltd Iii group nitride semiconductor element
JPH09153643A (en) * 1995-11-30 1997-06-10 Toyoda Gosei Co Ltd Group III nitride semiconductor device
JPH10173220A (en) * 1996-12-06 1998-06-26 Rohm Co Ltd Manufacture of semiconductor light-emitting element
JP2001007397A (en) * 1999-06-23 2001-01-12 Nichia Chem Ind Ltd Nitride semiconductor optical device and method of forming the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5432808A (en) * 1993-03-15 1995-07-11 Kabushiki Kaisha Toshiba Compound semicondutor light-emitting device
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US6017774A (en) * 1995-12-24 2000-01-25 Sharp Kabushiki Kaisha Method for producing group III-V compound semiconductor and fabricating light emitting device using such semiconductor
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JP3753793B2 (en) 1996-06-14 2006-03-08 豊田合成株式会社 Group 3 nitride compound semiconductor light emitting device
JP3304787B2 (en) * 1996-09-08 2002-07-22 豊田合成株式会社 Semiconductor light emitting device and method of manufacturing the same
JPH10150245A (en) * 1996-11-21 1998-06-02 Matsushita Electric Ind Co Ltd Manufacturing method of gallium nitride based semiconductor
JPH10214999A (en) 1997-01-30 1998-08-11 Toyota Central Res & Dev Lab Inc III-V nitride semiconductor device
JPH10303458A (en) 1997-04-24 1998-11-13 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor element
KR19980084825A (en) * 1997-05-26 1998-12-05 윤종용 GaN-based light emitting diode
US6194742B1 (en) 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
KR100304881B1 (en) * 1998-10-15 2001-10-12 구자홍 GaN system compound semiconductor and method for growing crystal thereof
JP2000244070A (en) * 1999-02-19 2000-09-08 Sony Corp Semiconductor device and semiconductor light emitting element
JP3567790B2 (en) * 1999-03-31 2004-09-22 豊田合成株式会社 Group III nitride compound semiconductor light emitting device
JP2001119102A (en) * 1999-10-15 2001-04-27 Toyoda Gosei Co Ltd Group III nitride compound semiconductor laser diode
JP2000261037A (en) * 2000-01-01 2000-09-22 Sharp Corp Semiconductor light emitting device
KR100425341B1 (en) * 2000-02-08 2004-03-31 삼성전기주식회사 Nitride semiconductor light emitting device
EP1265273A4 (en) * 2000-03-14 2009-05-06 Toyoda Gosei Kk PROCESS FOR PRODUCING NITRIDE III COMPOUND SEMICONDUCTOR AND SEMICONDUCTOR COMPONENT BASED ON NITRIDE III COMPOUND
JP3778765B2 (en) * 2000-03-24 2006-05-24 三洋電機株式会社 Nitride-based semiconductor device and manufacturing method thereof
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP4150527B2 (en) 2002-02-27 2008-09-17 日鉱金属株式会社 Crystal production method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254733A (en) * 1994-01-28 1995-10-03 Nichia Chem Ind Ltd Gallium nitride-based compound semiconductor light emitting device and electrode forming method thereof
JPH07302929A (en) * 1994-03-08 1995-11-14 Sumitomo Chem Co Ltd Group 3-5 compound semiconductor and light emitting device
JPH09129925A (en) * 1995-10-31 1997-05-16 Toyoda Gosei Co Ltd Iii group nitride semiconductor element
JPH09153643A (en) * 1995-11-30 1997-06-10 Toyoda Gosei Co Ltd Group III nitride semiconductor device
JPH10173220A (en) * 1996-12-06 1998-06-26 Rohm Co Ltd Manufacture of semiconductor light-emitting element
JP2001007397A (en) * 1999-06-23 2001-01-12 Nichia Chem Ind Ltd Nitride semiconductor optical device and method of forming the same

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1790017A4 (en) * 2004-08-26 2009-08-05 Lg Innotek Co Ltd NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
US8723197B2 (en) 2004-08-26 2014-05-13 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and method of manufacturing the same
US8193545B2 (en) 2004-08-26 2012-06-05 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US7812337B2 (en) 2004-08-26 2010-10-12 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
EP1794812A4 (en) * 2004-08-26 2010-07-07 Lg Innotek Co Ltd NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1803166A4 (en) * 2004-10-19 2013-02-27 Lg Innotek Co Ltd NITRIDE SEMICONDUCTOR PHOTOEMETER DEVICE AND METHOD FOR MANUFACTURING THE SAME
CN100583468C (en) * 2004-10-19 2010-01-20 Lg伊诺特有限公司 Nitride semiconductor light emitting device and method for manufacturing the same
US8030679B2 (en) 2004-10-19 2011-10-04 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method therefor
WO2006080701A1 (en) * 2004-10-19 2006-08-03 Lg Innotek Co., Ltd Nitride semiconductor light emitting device and fabrication method therefor
CN100433378C (en) * 2004-11-19 2008-11-12 深圳市方大国科光电技术有限公司 Light emitting diode structure and growth thereof
US8044380B2 (en) 2004-12-23 2011-10-25 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
WO2006068375A1 (en) * 2004-12-23 2006-06-29 Lg Innotek Co., Ltd Nitride semiconductor light emitting device and fabrication method thereof
KR100765004B1 (en) * 2004-12-23 2007-10-09 엘지이노텍 주식회사 Nitride semiconductor light emitting device and manufacturing method
EP1829122A4 (en) * 2004-12-23 2010-08-25 Lg Innotek Co Ltd NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
US7791062B2 (en) 2004-12-23 2010-09-07 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
CN100555682C (en) * 2004-12-23 2009-10-28 Lg伊诺特有限公司 Nitride semiconductor light emitting device and method for manufacturing the same
EP1829121A4 (en) * 2004-12-23 2010-12-01 Lg Innotek Co Ltd NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
US7902561B2 (en) 2004-12-23 2011-03-08 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device
JP2008526012A (en) * 2004-12-23 2008-07-17 エルジー イノテック カンパニー リミテッド Nitride semiconductor light emitting device and manufacturing method thereof
US8030639B2 (en) 2004-12-23 2011-10-04 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
CN100479206C (en) * 2004-12-23 2009-04-15 Lg伊诺特有限公司 Nitride semiconductor light emitting device and fabrication method thereof
CN100568551C (en) * 2004-12-23 2009-12-09 Lg伊诺特有限公司 Nitride semiconductor light emitting device and method for manufacturing the same
US8222654B2 (en) 2004-12-23 2012-07-17 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US8278646B2 (en) 2004-12-23 2012-10-02 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
WO2006068376A1 (en) * 2004-12-23 2006-06-29 Lg Innotek Co., Ltd Nitride semiconductor light emitting device and fabrication method thereof
US8558258B2 (en) 2004-12-23 2013-10-15 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US9343622B2 (en) 2004-12-23 2016-05-17 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US8674340B2 (en) 2004-12-23 2014-03-18 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
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US8969849B2 (en) 2004-12-23 2015-03-03 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US9190567B2 (en) 2004-12-23 2015-11-17 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US9231070B2 (en) 2006-05-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
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