CN101989637A - Blue light-emitting diode - Google Patents
Blue light-emitting diode Download PDFInfo
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- CN101989637A CN101989637A CN2009101574549A CN200910157454A CN101989637A CN 101989637 A CN101989637 A CN 101989637A CN 2009101574549 A CN2009101574549 A CN 2009101574549A CN 200910157454 A CN200910157454 A CN 200910157454A CN 101989637 A CN101989637 A CN 101989637A
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Abstract
The invention relates to a blue light-emitting diode and solves the problem of poor antistatic capacity of the conventional high-power blue light-emitting diode. The structure of the blue light-emitting diode is that: a sapphire substrate, an InGaN transition layer, an AlGaN transition layer, a low-temperature GaN buffer layer, an N-GaN contact layer, an InGaN/GaN light-emitting layer, a P+GaN contact layer and an Ni/Au transparent electrode layer are formed on the upper surface of a lining layer sequentially from bottom to top. A chip with the structure has superior stability. Compared with the conventional blue light-emitting diode, the blue light-emitting diode has strong antistatic capacity; and the service life of the high-power blue light-emitting diode can be obviously prolonged.
Description
Technical field
The present invention relates to a kind of light-emitting diode, more particularly, relate to blue light-emitting diode.
Background technology
Powerful blue light-emitting diode mainly is used in railway illumination, road lighting, mine lighting, and to the domestic lighting development, its effects of energy conservation and environmental protection is remarkable.
Epitaxial structure is the core of light-emitting diode, and at present the most ripe and blue light-emitting diode tool efficient is to adopt the stock of gallium nitride (GaN) as epitaxial structure, and it has the high characteristics of luminous efficiency.Its common structure is that growth has the epitaxial loayer of GaN sill and device on substrate.Because Sapphire Substrate has good stability, advantage that mechanical strength is high, can be used in the high growth temperature process and be easy to and handle and clean.Therefore, great majority designs all with sapphire as substrate, sapphire is a kind of insulator, resistivity under the normal temperature is greater than 1011 Ω/cm, can not change its conductivity by doping, the device of vertical stratification be can't make in this case, only n type and p type electrode made usually at the upper surface of epitaxial loayer.
In the making of blue light-emitting diode, the coupling of lattice is a great problem, the crystal structure that is to say epitaxial material and backing material is identical or close, lattice constant mismatch is little, crystal property good, defect concentration is low, and the factor that just is unlikely stress causes lattice defect.
The epitaxial structure of existing a kind of high-power blue light-emitting diode is to be formed with Sapphire Substrate 102, low temperature GaN resilient coating 103, N-GaN contact 104, InGaN/GaN luminescent layer 105, P+GaN contact 106, transparency conducting layer 107 on liner layer 101 from bottom to up successively as shown in Figure 1.
In this epitaxial structure, because the lattice constant and the thermal coefficient of expansion of GaN and Sapphire Substrate differ greatly, so lattice mismatch is quite big, that is to say GaN and sapphire AI
2O
3Lattice does not match, so, if on Sapphire Substrate growing GaN, cause a large amount of lattice defects easily, and these defectives will cause too much and puncture, thereby reduce the device antistatic effect greatly, cause component failure easily, influence its performance parameter.Its reason is, because the resistivity of GaN is higher, the induced charge because of generation of static electricity is difficult for disappearing in process of production, after being accumulated to a certain degree, will produce very high electrostatic potential, when electrostatic potential surpasses the ability to bear of material, punch-through and discharge can take place.In addition, adopt the positive and negative electrode of the chip of Sapphire Substrate all to be positioned at above the chip, spacing is very little, and is very little to the ability to bear of static, very easily by electrostatic breakdown, makes component failure, and the light-emitting diode that causes utilizing this epitaxial structure to form damages easily.
Summary of the invention
The present invention is in order to solve the problem of the antistatic effect difference that exists in the existing high-power blue light-emitting diode, and a kind of suitable production in enormous quantities, antistatic effect is strong, reliability is high blue light-emitting diode are provided.
For addressing the above problem, a kind of blue light-emitting diode provided by the invention forms Sapphire Substrate, InGaN transition zone, AIGaN transition zone, low temperature GaN resilient coating, N-GaN contact layer, InGaN/GaN luminescent layer, P+GaN contact layer, transparency conducting layer from bottom to up successively on the liner layer.
In addition, preferred construction is that described transparency conducting layer is the Ni/Au conductive layer.
In addition, preferred construction is that the thickness of described Sapphire Substrate layer is 50-200um.
In addition, structure more preferably is that the thickness of described Sapphire Substrate layer is 80um.
Moreover preferred construction is that the thickness of described InGaN transition zone is 5um-20um.
In addition, preferred structure is that the thickness of described InGaN transition zone is 8um-10um.
In addition, preferred construction is that the thickness of described AlGaN transition zone is 5um-20um.
Moreover preferred structure is that the thickness of described AlGaN transition zone is 8um-10um
Principal character of the present invention is to have added three layers of resilient coating again and reduce lattice mismatch before the InGaN layer.The InGaN layer can provide a surface diffusion coefficient preferably, but the lattice mismatch of it and GaN is more serious, so will add one deck transition zone; The AlGaN transition zone has the transitional function from InGaN to GaN; The GaN layer can provide the basis for the growth of high-quality InGaN as substrate.
According to aforesaid structure of the present invention, can obviously improve the antistatic effect of blue light-emitting diode, when guaranteeing brightness and voltage, can have good stability, improved the epitaxial growth condition, strengthened the antistatic effect of epitaxial structure, also be greatly improved useful life.
Description of drawings
Fig. 1 is the schematic diagram of the concrete structure of the existing blue light-emitting diode of expression.
Fig. 2 is the schematic diagram of the concrete structure of the blue light-emitting diode that the present invention relates to of expression.
Embodiment
Below, be described with reference to the accompanying drawings the specific embodiment of the present invention.
Fig. 2 is the schematic diagram of the concrete structure of the blue light-emitting diode that the present invention relates to of expression.As shown in Figure 2, the concrete structure of blue light-emitting diode is to be formed with Sapphire Substrate 202, InGaN transition zone 208, AIGaN transition zone 209, low temperature GaN resilient coating 203, N-GaN contact layer 204, lnGaN/GaN luminescent layer 205, P+GaN contact layer 206, Ni/Au transparent electrode layer 207 on liner layer 201 from bottom to up successively.
At this, between described Sapphire Substrate 202 and GaN resilient coating 203, be formed with two-layer transition zone, wherein InGaN transition zone 208 and Sapphire Substrate 202 adjacency, that is to say, because the lattice constant of sapphire and InGaN is more or less the same, and InGaN has a surface of good diffusion coefficient, can be complementary with sapphire well; Moreover, AIGaN transition zone 209 is formed between InGaN transition zone 208 and the low temperature GaN resilient coating 203, because the adding of InGaN transition zone 208 has increased the weight of the lattice unbalance defective of Sapphire Substrate 202 with GaN resilient coating 203, for this reason, must choose a kind of better material and cushion lattice defect, a kind of material preferably is AIGaN, it can be well in and the lattice defect of GaN and InGaN, thereby the thermal stability of final products and anti-current are all had a greater degree of improvement.
The thickness of various materials need be determined certain boundary, if too thin, in the process of producing and processing, is not easy control; Too thick, on overall dimensions, exceed design again easily, influence the optical effect of light-emitting diode.
Therefore, in one embodiment, preferred construction is, the thickness of described Sapphire Substrate 202 is 50um, and the thickness of InGaN transition zone 208 is 5um, and the thickness of AlGaN transition zone 209 is 5um.
In another embodiment, preferred construction is, the thickness of described Sapphire Substrate 202 is 200um, and the thickness of InGaN transition zone 208 is 20um, and the thickness of AlGaN transition zone 209 is 20um.
And in yet another embodiment of the present invention, preferred construction is, the thickness of described Sapphire Substrate 202 is elected 80um as, and the thickness of InGaN transition zone 208 is 8um-10um, and the thickness of AlGaN transition zone 209 is 8um-10um.Under the situation of this embodiment, can control integral thickness well, in addition, this gauge is not high for the requirement of production technology yet, and the light-emitting diode of producing has good luminescent characteristic.
In the present embodiment, between Sapphire Substrate 202 and low temperature GaN resilient coating 203, be formed with InGaN transition zone 208 and AlGaN transition zone 209, AlGaN transition zone 209, InGaN transition zone 208 and GaN resilient coating 203 interact, part complements each other in the electron hole, finally can reach good coupling, make the unbalance control that obtains to a certain degree of lattice.
After the AlGaN transition zone of InGaN transition zone that adopts the Sapphire Substrate of 80um, 8um-10um and 8um-10um has been made the epitaxial structure of blue light-emitting diode, utilize the LED-electrostatic tester to test the antistatic effect of this blue light-emitting diode and adopt the antistatic effect of the blue light-emitting diode of existing epitaxial structure, shown in the table 1 below its contrast situation.
Table 1:
Can know from above contrast, adopt the structure that the present invention relates to, can improve the antistatic effect of blue light-emitting diode largely.Simultaneously, the production technology of the epitaxial structure of this blue light-emitting diode is simple, is suitable for large batch of production.
Though above at the structrual description of blue light-emitting diode principle of the present invention and embodiment; but; under above-mentioned instruction of the present invention; those skilled in the art can carry out various improvement and distortion on the basis of above-mentioned execution mode, and these improvement or distortion drop in protection scope of the present invention.It will be understood by those skilled in the art that top specific descriptions just in order to explain purpose of the present invention, are not to be used to limit the present invention.Protection scope of the present invention is limited by claim and equivalent thereof.
Claims (8)
1. a blue light-emitting diode is characterized in that,
On the liner layer, form Sapphire Substrate, InGaN transition zone, AIGaN transition zone, low temperature GaN resilient coating, N-GaN contact layer, InGaN/GaN luminescent layer, P+GaN contact layer, transparency conducting layer from bottom to up successively.
2. blue light-emitting diode as claimed in claim 1 is characterized in that,
Described transparency conducting layer is the Ni/Au conductive layer.
3. blue light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described Sapphire Substrate layer is 50-200um.
4. blue light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described Sapphire Substrate layer is 80um.
5. blue light-emitting diode as claimed in claim 1 is characterized in that,
Described InGaN transition region thickness is 5um-20um.
6. blue light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described InGaN transition zone is 8um-10um.
7. blue light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described AlGaN transition zone is 5um-20um.
8. blue light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described AlGaN transition zone is 8um-10um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101574549A CN101989637A (en) | 2009-07-30 | 2009-07-30 | Blue light-emitting diode |
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| CN2009101574549A CN101989637A (en) | 2009-07-30 | 2009-07-30 | Blue light-emitting diode |
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| CN101989637A true CN101989637A (en) | 2011-03-23 |
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| CN2009101574549A Pending CN101989637A (en) | 2009-07-30 | 2009-07-30 | Blue light-emitting diode |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
| CN1659715A (en) * | 2002-08-19 | 2005-08-24 | Lg伊诺特有限公司 | Nitride semiconductor LED and fabrication method thereof |
| CN1996625A (en) * | 2006-01-06 | 2007-07-11 | 大连路明科技集团有限公司 | GaN base optical electronic part and its making method |
| CN101038947A (en) * | 2006-03-17 | 2007-09-19 | 中国科学院物理研究所 | White light GaN LED epitaxial material without fluorescent powder conversion and method for making the same |
| CN201490229U (en) * | 2009-07-30 | 2010-05-26 | 歌尔声学股份有限公司 | Blue light emitting diode (LED) |
-
2009
- 2009-07-30 CN CN2009101574549A patent/CN101989637A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
| CN1659715A (en) * | 2002-08-19 | 2005-08-24 | Lg伊诺特有限公司 | Nitride semiconductor LED and fabrication method thereof |
| CN1996625A (en) * | 2006-01-06 | 2007-07-11 | 大连路明科技集团有限公司 | GaN base optical electronic part and its making method |
| CN101038947A (en) * | 2006-03-17 | 2007-09-19 | 中国科学院物理研究所 | White light GaN LED epitaxial material without fluorescent powder conversion and method for making the same |
| CN201490229U (en) * | 2009-07-30 | 2010-05-26 | 歌尔声学股份有限公司 | Blue light emitting diode (LED) |
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Application publication date: 20110323 |