WO2004017422A2 - Matiere destinee a une couche intermediaire d'un composant photovoltaique organique, procede de production et utilisation associes et composant photovoltaique - Google Patents

Matiere destinee a une couche intermediaire d'un composant photovoltaique organique, procede de production et utilisation associes et composant photovoltaique Download PDF

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Publication number
WO2004017422A2
WO2004017422A2 PCT/DE2003/002464 DE0302464W WO2004017422A2 WO 2004017422 A2 WO2004017422 A2 WO 2004017422A2 DE 0302464 W DE0302464 W DE 0302464W WO 2004017422 A2 WO2004017422 A2 WO 2004017422A2
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WO
WIPO (PCT)
Prior art keywords
organic
intermediate layer
photovoltaic component
work function
layer
Prior art date
Application number
PCT/DE2003/002464
Other languages
German (de)
English (en)
Other versions
WO2004017422A3 (fr
Inventor
Klaus Meerholz
Christoph Brabec
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2004017422A2 publication Critical patent/WO2004017422A2/fr
Publication of WO2004017422A3 publication Critical patent/WO2004017422A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • a photovoltaic component means both a solar cell and a photodetector.
  • the invention relates to a material for an intermediate layer of an organic photovoltaic component with improved efficiency.
  • An electrode for example a transparent conductive oxide such as indium tin oxide “ITO”, is followed by an organic intermediate layer PEDOT / PSS on which the photoactive semiconductor layer, for example a conjugated polymer / fullerene mixture, is located, that is to say a donor-acceptor Mixture that connects to the negative electrode, eg a metal contact such as Ca / Ag or LiF / Al, but the individual layers can differ, in particular the electrodes, the donor (conjugated polymer) and the acceptor (PCBM, a soluble methano - fullerene).
  • the photoactive semiconductor layer for example a conjugated polymer / fullerene mixture
  • PCBM a soluble methano - fullerene
  • the built-in voltage corresponds to the compensation voltage that is applied to a solar cell to the cell under intensive lighting and at low temperatures (ideally 0 K).
  • the open circuit voltage of a fully functional solar cell is usually accepted as a measure of the built-in voltage.
  • the upper limit of the open circuit voltage is given by the electrical potentials of the semiconductor materials used (the HOMO or valence band of Donors (p-type semiconductor) and the LUMO or conduction band of the acceptor (n-type semiconductor). In the event that the electrical contacts of the solar cell do not form an ideal ohmic contact, the built-in potential or the open circuit voltage can also reach values lower than the maximum value defined above.
  • the built-in potential or the open circuit voltage is influenced or even dominated by the work function of the metal contacts.
  • the material of the organic (polymer” the term “polymer” here stands for organic or non-conventional, ie silicon-based semiconductor technology par excellence) intermediate layer, which connects the transparent electrode with the photoactive semiconductor layer, thus has a key position in improving the Efficiency of organic solar cells, especially with regard to the optimization of the electrical losses through the electrode / semiconductor contact.
  • the successful functioning is demonstrated by “zero built in field” and / or “inverted” organic solar cells that can be realized by chemical and / or physical changes in the organic intermediate layer.
  • the object of the invention is therefore to create a material for an intermediate layer of an organic photovoltaic component which can be adapted chemically and / or physically to the electrical properties of the subsequent semiconductor layer.
  • the invention relates to a material for an intermediate layer of an organic photovoltaic component, the work function of which (electrochemical potential or Fermi function) is adapted to the physical properties of the semiconductor layer.
  • the invention also relates to a method for producing a material for an intermediate layer of an organic photovoltaic component and finally the use of a material for an intermediate layer of an organic photovoltaic component is the subject of the invention.
  • the subject is also an organic African photovoltaic component that meets the conditions of an "inverted" solar cell or a "zero-built-in-field” solar cell, object of the invention.
  • the invention addresses improvements for them
  • PEDOT.PSS layer PEDOT.PSS is representative of all other materials known as hole transport layers. What these materials have in common is that their conductivity can be changed by doping (oxidation). The insertion of a PEDOT.PSS (or possibly PANI) layer in the
  • PEDOT.PSS is primarily known from light-emitting diodes as a hole transport layer (HTL).
  • the invention discloses alternative solutions for these PEDOT.PSS layers.
  • the use of known, electrochemically doped layers of conjugated polymers instead of PEDOT: PSS in organic photovoltaic components is the essential innovation of the invention and the function and efficiency of an organic photovoltaic element can be improved thereby.
  • the work function or work function of the organic interlayer is the energy that is required to lift charge carriers out of the straps into the vacuum level.
  • the Fermie energy or of the electrochemical potential are examples of the Fermie energy or of the electrochemical potential.
  • the adaptation of the material of the organic intermediate layer takes place by doping, that is to say that the material either before or after it is applied to the transparent electrode or another lower layer of the organic photovoltaic component by chemical or electrochemical means, that is to say by a chemical process ( Add an oxidizing or reducing agent, e.g. J 2 , Na, FeCl 3 ) or (preferably because better fine adjustment is possible) is doped by an electrochemical, galvanic process, that is to say oxidized or reduced in a controlled manner.
  • doping that is to say that the material either before or after it is applied to the transparent electrode or another lower layer of the organic photovoltaic component by chemical or electrochemical means, that is to say by a chemical process ( Add an oxidizing or reducing agent, e.g. J 2 , Na, FeCl 3 ) or (preferably because better fine adjustment is possible) is doped by an electrochemical, galvanic process, that is to say oxidized or reduced in a controlled manner.
  • an oxidizing or reducing agent
  • controlled or “systematic” means that the electrochemical potential of the organic semiconductor layer can be shifted with an accuracy which realizes a fine adjustment of +/- 10 mV or less, but which can also be arbitrary or statistical, as desired ,
  • a PEDOT polyp, 4-ethylenedioxythiophene
  • PSS stands for polystyrene sulfonate
  • counterions such as hexafluorophosphate, tetraphenylborate, perchlorate and / or tetraalkylammonium salts serve as organic material, for example.
  • PDBT poly (4, 4 ⁇ -dimethoxy-bithiophene) is also used as an organic material.
  • organic material includes fully here all types of organic, organometallic and / or inorganic polymers that are referred to in English, for example, with “plastics". These are all types of substances with the exception of the semiconductors that form the classic diodes (germanium, silicon) and the typical metallic conductors.
  • a limitation in the dogmatic sense to organic material as carbon-containing material is therefore not intended, rather the broad use of, for example, silicones is also contemplated.
  • the term should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but the use of "small molecules" is also entirely possible.
  • the adaptation or doping of the intermediate layer takes place during the manufacturing process the organic intermediate layer, that is to say the monomers are applied and electrochemically polymerized and simultaneously doped, that is to say reduced or oxidized electrochemically, for example by means of connected and / or immersed electrodes.
  • This ensures a relatively precise fine adjustment of the desired work function.
  • the doping can of course also be carried out just as well on the already fully polymerized or crosslinked organic material.
  • the material is doped with a chemical reducing or oxidizing agent before it is applied, for example from the solution, by addition and / or reaction.
  • chemical reducing or oxidizing agents include iodine, iron (III) chloride, sodium, lithium, potassium ... also all other strongly oxidizing or reducing substances.
  • the doping of the organic material is already from the publication M.Gross, D.C. Müller, H.-G. Nothofer,
  • FIGS 1 to 3 schematically show the layer structure of an organic photovoltaic component again.
  • Figure 1 shows an organic photovoltaic device, which, as is known, a substrate 1, a semi-transparent electrode 2, a semiconductor 4, which also has several layers may comprise, and comprises a negative electrode 5.
  • a layer 3 doped according to the invention is introduced between the semi-transparent p-electrode 2 and the semiconductor 4.
  • layer 3 is positively doped (oxidized).
  • the work function of this layer 3 is determined by the degree of doping and can be adapted to the photovoltaic system.
  • the semiconductor layer can be doped chemically or electrochemically.
  • FIG. 2 shows a photovoltaic organic component which, as in FIG. 1, has a substrate 1, a semitransparent electrode 2, a semiconductor 4 and a negative electrode 5.
  • the doped layer 3 is between the negative electrode 5 and the semiconductor 4 brought in.
  • layer 3 is negatively doped (reduced).
  • the work function of this layer 3 is determined by the degree of doping and can be adapted to the photovoltaic system.
  • the semiconductor layer can be doped chemically or electrochemically.
  • FIG. 3 shows the structure of a further organic photovoltaic component, which comprises a substrate 1, a semi-transparent electrode 2, a semiconductor 4 and a negative electrode 5.
  • Two doped layers 3a and 3b are introduced.
  • the layer 3b is introduced between the negative electrode 5 and the semiconductor 4 and the doped layer 3a is introduced between the positive electrode 2 and the semiconductor 4.
  • layer 3b is negatively doped (reduced), and layer 3a is positively doped (oxidized) in this case.
  • the work function of the layers (3a, 3b) is determined by the degree of doping and can be adapted to the photovoltaic system.
  • the semiconductor layers can be doped chemically or electrochemically. In all cases it is possible to make the positive or the negative electrode semi-transparent.
  • Organic photovoltaic components are a promising new technology for the inexpensive conversion and / or detection of photons, in particular solar energy.
  • the work function or the "built-in voltage” could be systematically adapted.
  • "Zero-built -in-field "and” inverted "organic photovoltaic components could thus be realized for the first time with the same chemical intermediate layer as organic photovoltaic components with optimized electrode / semiconductor contacts.
  • this organic intermediate layer serves as a negative electrode, which means that the organic interlayer is the electron-collecting electrode, which was not previously known for these organic photovoltaic components .. It is noteworthy that the same interlayer as both anode and cathode can also work.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une matière destinée à une couche intermédiaire d'un composant photovoltaïque organique possédant une efficacité accrue. Selon l'invention, l'efficacité est accrue par adaptation du travail d'extraction de la couche intermédiaire.
PCT/DE2003/002464 2002-07-31 2003-07-22 Matiere destinee a une couche intermediaire d'un composant photovoltaique organique, procede de production et utilisation associes et composant photovoltaique WO2004017422A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10235012A DE10235012A1 (de) 2002-07-31 2002-07-31 Material für eine Zwischenschicht eines organischen photovoltaischen Bauelements, Herstellungsverfahren und Verwendung dazu sowie ein photovoltaisches Bauelement
DE10235012.4 2002-07-31

Publications (2)

Publication Number Publication Date
WO2004017422A2 true WO2004017422A2 (fr) 2004-02-26
WO2004017422A3 WO2004017422A3 (fr) 2004-12-23

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PCT/DE2003/002464 WO2004017422A2 (fr) 2002-07-31 2003-07-22 Matiere destinee a une couche intermediaire d'un composant photovoltaique organique, procede de production et utilisation associes et composant photovoltaique

Country Status (2)

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DE (1) DE10235012A1 (fr)
WO (1) WO2004017422A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278585A (ja) * 2005-03-28 2006-10-12 Dainippon Printing Co Ltd 有機薄膜太陽電池素子
WO2020111943A1 (fr) 2018-11-30 2020-06-04 Technische Universiteit Delft Dopage électrochimique de matériaux semi-conducteurs

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
WO2000065653A1 (fr) * 1999-04-22 2000-11-02 Thin Film Electronics Asa Procede de fabrication de dispositifs semi-conducteurs a couches minces
WO2001039276A1 (fr) * 1999-11-26 2001-05-31 The Trustees Of Princeton University Dispositif opto-electronique photosensible organique comportant une couche de blocage d'excitons
WO2001084644A1 (fr) * 2000-04-27 2001-11-08 Qsel-Quantum Solar Energy Linz Forschungs- Und Entwicklungs-Gesellschaft M.B.H. Cellule photovoltaique
DE10209789A1 (de) * 2002-02-28 2003-09-25 Univ Dresden Tech Photoaktives Bauelement mit organischen Schichten

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
WO2000065653A1 (fr) * 1999-04-22 2000-11-02 Thin Film Electronics Asa Procede de fabrication de dispositifs semi-conducteurs a couches minces
WO2001039276A1 (fr) * 1999-11-26 2001-05-31 The Trustees Of Princeton University Dispositif opto-electronique photosensible organique comportant une couche de blocage d'excitons
WO2001084644A1 (fr) * 2000-04-27 2001-11-08 Qsel-Quantum Solar Energy Linz Forschungs- Und Entwicklungs-Gesellschaft M.B.H. Cellule photovoltaique
DE10209789A1 (de) * 2002-02-28 2003-09-25 Univ Dresden Tech Photoaktives Bauelement mit organischen Schichten

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278585A (ja) * 2005-03-28 2006-10-12 Dainippon Printing Co Ltd 有機薄膜太陽電池素子
WO2020111943A1 (fr) 2018-11-30 2020-06-04 Technische Universiteit Delft Dopage électrochimique de matériaux semi-conducteurs
NL2022110B1 (en) * 2018-11-30 2020-06-26 Univ Delft Tech Electrochemical doping of semiconductor materials

Also Published As

Publication number Publication date
WO2004017422A3 (fr) 2004-12-23
DE10235012A1 (de) 2004-03-04

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