WO2004008497A2 - Thermal interconnect and interface systems, methods of production and uses thereof - Google Patents
Thermal interconnect and interface systems, methods of production and uses thereof Download PDFInfo
- Publication number
- WO2004008497A2 WO2004008497A2 PCT/US2003/022710 US0322710W WO2004008497A2 WO 2004008497 A2 WO2004008497 A2 WO 2004008497A2 US 0322710 W US0322710 W US 0322710W WO 2004008497 A2 WO2004008497 A2 WO 2004008497A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- thermal
- resin
- layered
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20436—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
- H05K7/20445—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing the coupling element being an additional piece, e.g. thermal standoff
- H05K7/20472—Sheet interfaces
- H05K7/20481—Sheet interfaces characterised by the material composition exhibiting specific thermal properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- Thermal interconnect materials and layers may also comprise metals, metal alloys and suitable composite materials that meet the following design goals:
- CTE coefficient of thermal expansion
- a material with a low value for k such as thermal grease, performs well if the interface is thin, i.e. the "t" value is low. If the interface thickness increases by as little as 0.002 inches, the thermal performance can drop dramatically. Also, for such applications, differences in CTE between the mating components cause the gap to expand and contract with each temperature or power cycle. This variation of the interface thickness can cause pumping of fluid interface materials (such as grease) away from the interface.
- the soft gel will be more "liquid-like".
- the amine resin and the rubber compounds undergo a minimal amount of crosslinking (about 10% of the sites available for crosslinking are actually used in the crosslinking reaction) then the soft gel will be more "liquid-like".
- the amine resin and the rubber compounds undergo a significant amount of crosslinking (about 40-60% of the sites available for crosslinking are actually used in the crosslinking reaction and possibly there is a measurable degree of intermolecular or intramolecular crosslinking between the rubber compounds themselves) then the gel would become thicker and more "solid-like".
- the catalyst is an organic acid, such as carboxylic, acetic, formic, benzoic, salicylic, dicarboxylic, oxalic, phthalic, sebacic, adipic, oleic, palmitic, stearic, phenylstearic, amino acids and sulfonic acid.
- organic acid such as carboxylic, acetic, formic, benzoic, salicylic, dicarboxylic, oxalic, phthalic, sebacic, adipic, oleic, palmitic, stearic, phenylstearic, amino acids and sulfonic acid.
- the alloy includes an element, material, compound or composition that improves the wettability of the alloy to the heat spreader. It should be understood that in this application, improving the wettability of the alloy comprises reducing the amount of surface oxides. Suitable elements that improve wettability are gold, calcium, cobalt, chromium, copper, iron, manganese, magnesium, gallium, molybdenum, nickel, phosphorus, palladium, platinum, tin, tantalum, titanium, vanadium, tungsten, zinc, and/or zirconium.
- the thermal interface layer Once the thermal interface layer is deposited it is understood that it will have a relatively high thermal conductivity as compared to conventional thermal adhesives and other thermal layers. Additional layers, such as a metallized silicon die can be soldered directly to the thermal interconnect layer without the use of such damaging materials as corrosive fluxes that may be needed to remove oxides of the materials, such as nickel, used to produce the thermal spreader.
- Ninyl Q resins are also clear reinforcing additives for addition cure elastomers.
- Examples of vinyl Q resin dispersions that have at least about 20%> Q-resin are NQM-135 (DMS-V41 Base), NQM-146 (DMS-N46 Base), and VQX-221 (50% in xylene Base).
- the resin mixture can be cured at either at room temperature or at elevated temperatures to form a compliant elastomer.
- the reaction is via hydrosilylation (addition cure) of vinyl functional siloxanes by hydride functional siloxanes in the presence of a catalyst, such as platinum complexes or nickel complexes.
- a catalyst such as platinum complexes or nickel complexes.
- Preferred platinum catalysts are SIP6830.0, SIP6832.0, and platinum- vinylsiloxane.
- Contemplated examples of vinyl silicone include vinyl terminated polydimethyl siloxanes that have a molecular weight of about 10000 to 50000.
- Contemplated examples of hydride functional siloxane include methylhydrosiloxane-dimethylsiloxane copolymers that have a molecular weight about 500 to 5000. Physical properties can be varied from a very soft gel material at a very low crosslink density to a tough elastomer network of higher crosslink density.
- solder materials as previously disclosed, that are dispersed in the resin mixture are contemplated to be any suitable solder material for the desired application.
- solder materials are indium tin (InSn) complexes, indium silver (InAg) complexes and alloys, indium-based compounds, tin silver copper complexes (SnAgCu), tin bismuth complexes and alloys (SnBi), and aluminum-based compounds and alloys. Of these, especially contemplated solder materials are those materials that comprise indium.
- the release liner is (short one preferably) removed to expose the polymer solder material to apply the material to the component.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Thermal Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Laminated Bodies (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004521992A JP2005538535A (ja) | 2002-07-15 | 2003-07-15 | 熱的インターコネクトおよびインターフェースシステム、製造方法およびその使用 |
| AU2003254046A AU2003254046A1 (en) | 2002-07-15 | 2003-07-15 | Thermal interconnect and interface systems, methods of production and uses thereof |
| US10/519,337 US20060040112A1 (en) | 2002-07-15 | 2003-07-15 | Thermal interconnect and interface systems, methods of production and uses thereof |
| EP03764825A EP1531985A4 (en) | 2002-07-15 | 2003-07-15 | THERMAL CONNECTING AND BORDER AREA SYSTEMS, MANUFACTURING METHOD AND USES THEREOF |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39629402P | 2002-07-15 | 2002-07-15 | |
| US60/396,294 | 2002-07-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO2004008497A2 true WO2004008497A2 (en) | 2004-01-22 |
| WO2004008497A3 WO2004008497A3 (en) | 2004-04-01 |
| WO2004008497B1 WO2004008497B1 (en) | 2004-05-06 |
Family
ID=30116003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2003/022710 Ceased WO2004008497A2 (en) | 2002-07-15 | 2003-07-15 | Thermal interconnect and interface systems, methods of production and uses thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060040112A1 (enExample) |
| EP (1) | EP1531985A4 (enExample) |
| JP (1) | JP2005538535A (enExample) |
| CN (1) | CN1681648A (enExample) |
| AU (1) | AU2003254046A1 (enExample) |
| TW (1) | TW200409246A (enExample) |
| WO (1) | WO2004008497A2 (enExample) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7141273B2 (en) * | 2003-10-07 | 2006-11-28 | Shin-Etsu Chemical Co., Ltd. | Curable organopolysiloxane composition and semiconductor device |
| DE102005045767A1 (de) * | 2005-09-23 | 2007-05-24 | Infineon Technologies Ag | Halbleiterbauteil mit Kunststoffgehäusemasse und Verfahren zur Herstellung desselben |
| CN100389166C (zh) * | 2004-04-29 | 2008-05-21 | 鸿富锦精密工业(深圳)有限公司 | 一种热界面材料及其制造方法 |
| WO2016086410A1 (en) * | 2014-12-05 | 2016-06-09 | Honeywell International Inc. | High performance thermal interface materials with low thermal impedance |
| CN108235666A (zh) * | 2018-02-11 | 2018-06-29 | 中国科学院工程热物理研究所 | 表面调控的柔性微槽群热沉、散热装置和方法 |
| US10155894B2 (en) | 2014-07-07 | 2018-12-18 | Honeywell International Inc. | Thermal interface material with ion scavenger |
| US10174433B2 (en) | 2013-12-05 | 2019-01-08 | Honeywell International Inc. | Stannous methanesulfonate solution with adjusted pH |
| US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
| US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
| US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
| US10781349B2 (en) | 2016-03-08 | 2020-09-22 | Honeywell International Inc. | Thermal interface material including crosslinker and multiple fillers |
| US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
| US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
| US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
| US20250214088A1 (en) * | 2023-12-28 | 2025-07-03 | Lenovo Enterprise Solutions (Singapore) Pte Ltd. | Removing a ferromagnetic liquid from a surface |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7210227B2 (en) * | 2002-11-26 | 2007-05-01 | Intel Corporation | Decreasing thermal contact resistance at a material interface |
| DE10319888A1 (de) | 2003-04-25 | 2004-11-25 | Siemens Ag | Lotmaterial auf SnAgCu-Basis |
| US7261389B2 (en) * | 2003-11-26 | 2007-08-28 | Fuji Xerox Co., Ltd. | Systems and methods for dissipating heat into a fluid ejector carriage device |
| US7192116B2 (en) * | 2003-11-26 | 2007-03-20 | Fuji Xerox Co., Ltd. | Systems and methods for dissipating heat from a fluid ejector carriage |
| EP1731002A4 (en) * | 2004-03-30 | 2010-05-26 | Honeywell Int Inc | HEAT DISTRIBUTION STRUCTURES, INTEGRATED CIRCUITS, METHOD FOR GENERATING HEAT DISTRIBUTION CONSTRUCTIONS, AND METHOD FOR GENERATING INTEGRATED CIRCUITS |
| JP2005317796A (ja) * | 2004-04-28 | 2005-11-10 | Toshiba Corp | ポンプ、冷却装置および電子機器 |
| US7319048B2 (en) * | 2004-09-03 | 2008-01-15 | Intel Corporation | Electronic assemblies having a low processing temperature |
| US20070069373A1 (en) * | 2005-09-29 | 2007-03-29 | Roth Arti P | Device with surface cooling and method of making |
| US20070148467A1 (en) * | 2005-12-23 | 2007-06-28 | World Properties, Inc. | Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom |
| US20070256783A1 (en) * | 2006-05-08 | 2007-11-08 | Dietz Raymond L | Thermally enhanced adhesive paste |
| US8344523B2 (en) | 2006-05-08 | 2013-01-01 | Diemat, Inc. | Conductive composition |
| US20080296756A1 (en) * | 2007-05-30 | 2008-12-04 | Koch James L | Heat spreader compositions and materials, integrated circuitry, methods of production and uses thereof |
| US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
| EP2188834A4 (en) * | 2007-09-11 | 2014-03-19 | Dow Corning | COMPOSITE, THERMAL INTERMEDIATE MATERIAL WITH THE COMPOSITE AND METHOD FOR ITS MANUFACTURE AND USE |
| KR20100069667A (ko) * | 2007-09-11 | 2010-06-24 | 다우 코닝 코포레이션 | 열계면재료, 열계면재료를 포함하는 전자장치, 그리고 이들의 제조방법 및 용도 |
| US20090111925A1 (en) * | 2007-10-31 | 2009-04-30 | Burnham Kikue S | Thermal interface materials, methods of production and uses thereof |
| WO2009114372A2 (en) * | 2008-03-13 | 2009-09-17 | Honeywell International Inc. | Thermal interconnect and integrated interface systems, methods of production and uses thereof |
| KR20100062550A (ko) * | 2008-12-02 | 2010-06-10 | 삼성전기주식회사 | 패턴부가 형성된 솔더 레지스트층을 구비한 패키지 기판 및그 제조방법 |
| CN102341474B (zh) | 2009-03-02 | 2014-09-24 | 霍尼韦尔国际公司 | 热界面材料及制造和使用它的方法 |
| WO2014074538A1 (en) * | 2012-11-09 | 2014-05-15 | 3M Innovative Properties Company | Thermal interface compositions and methods for making and using same |
| US9738976B2 (en) | 2013-02-27 | 2017-08-22 | Ioxus, Inc. | Energy storage device assembly |
| CN105190944B (zh) * | 2013-02-27 | 2018-08-17 | 翱旭公司 | 能量存储装置组件 |
| US9899643B2 (en) | 2013-02-27 | 2018-02-20 | Ioxus, Inc. | Energy storage device assembly |
| US9892868B2 (en) | 2013-06-21 | 2018-02-13 | Ioxus, Inc. | Energy storage device assembly |
| US9826662B2 (en) * | 2013-12-12 | 2017-11-21 | General Electric Company | Reusable phase-change thermal interface structures |
| JP6320331B2 (ja) * | 2015-03-16 | 2018-05-09 | 三菱電機株式会社 | 電力用半導体装置 |
| CN105441034A (zh) * | 2015-12-03 | 2016-03-30 | 深圳德邦界面材料有限公司 | 一种橡胶改性的相变导热界面材料及制备方法 |
| FR3061989B1 (fr) * | 2017-01-18 | 2020-02-14 | Safran | Procede de fabrication d'un module electronique de puissance par fabrication additive, substrat et module associes |
| CN116640366A (zh) * | 2023-06-27 | 2023-08-25 | 广东力王新材料有限公司 | 一种橡胶相变材料及其制备工艺 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2228814B1 (enExample) * | 1973-05-11 | 1975-11-21 | Rhone Poulenc Ind | |
| EP0042693B1 (en) * | 1980-06-21 | 1985-03-27 | LUCAS INDUSTRIES public limited company | Semi-conductor power device assembly and method of manufacture thereof |
| US4584336A (en) * | 1984-10-29 | 1986-04-22 | Sws Silicones Corporation | Thermally conductive room temperature vulcanizable compositions |
| US5440230A (en) * | 1993-04-02 | 1995-08-08 | Heflinger; Bruce L. | Combinatorial signature for component identification |
| US5679457A (en) * | 1995-05-19 | 1997-10-21 | The Bergquist Company | Thermally conductive interface for electronic devices |
| US5847929A (en) * | 1996-06-28 | 1998-12-08 | International Business Machines Corporation | Attaching heat sinks directly to flip chips and ceramic chip carriers |
| US6084775A (en) * | 1998-12-09 | 2000-07-04 | International Business Machines Corporation | Heatsink and package structures with fusible release layer |
| US6238596B1 (en) * | 1999-03-09 | 2001-05-29 | Johnson Matthey Electronics, Inc. | Compliant and crosslinkable thermal interface materials |
| US6605238B2 (en) * | 1999-09-17 | 2003-08-12 | Honeywell International Inc. | Compliant and crosslinkable thermal interface materials |
| US6653730B2 (en) * | 2000-12-14 | 2003-11-25 | Intel Corporation | Electronic assembly with high capacity thermal interface |
-
2003
- 2003-07-15 AU AU2003254046A patent/AU2003254046A1/en not_active Abandoned
- 2003-07-15 CN CNA038218844A patent/CN1681648A/zh active Pending
- 2003-07-15 EP EP03764825A patent/EP1531985A4/en not_active Withdrawn
- 2003-07-15 JP JP2004521992A patent/JP2005538535A/ja active Pending
- 2003-07-15 WO PCT/US2003/022710 patent/WO2004008497A2/en not_active Ceased
- 2003-07-15 US US10/519,337 patent/US20060040112A1/en not_active Abandoned
- 2003-07-15 TW TW92119265A patent/TW200409246A/zh unknown
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7141273B2 (en) * | 2003-10-07 | 2006-11-28 | Shin-Etsu Chemical Co., Ltd. | Curable organopolysiloxane composition and semiconductor device |
| CN100389166C (zh) * | 2004-04-29 | 2008-05-21 | 鸿富锦精密工业(深圳)有限公司 | 一种热界面材料及其制造方法 |
| DE102005045767A1 (de) * | 2005-09-23 | 2007-05-24 | Infineon Technologies Ag | Halbleiterbauteil mit Kunststoffgehäusemasse und Verfahren zur Herstellung desselben |
| DE102005045767B4 (de) * | 2005-09-23 | 2012-03-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauteils mit Kunststoffgehäusemasse |
| US10174433B2 (en) | 2013-12-05 | 2019-01-08 | Honeywell International Inc. | Stannous methanesulfonate solution with adjusted pH |
| US10428257B2 (en) | 2014-07-07 | 2019-10-01 | Honeywell International Inc. | Thermal interface material with ion scavenger |
| US10155894B2 (en) | 2014-07-07 | 2018-12-18 | Honeywell International Inc. | Thermal interface material with ion scavenger |
| US10287471B2 (en) | 2014-12-05 | 2019-05-14 | Honeywell International Inc. | High performance thermal interface materials with low thermal impedance |
| WO2016086410A1 (en) * | 2014-12-05 | 2016-06-09 | Honeywell International Inc. | High performance thermal interface materials with low thermal impedance |
| US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
| US10781349B2 (en) | 2016-03-08 | 2020-09-22 | Honeywell International Inc. | Thermal interface material including crosslinker and multiple fillers |
| US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
| US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
| US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
| CN108235666A (zh) * | 2018-02-11 | 2018-06-29 | 中国科学院工程热物理研究所 | 表面调控的柔性微槽群热沉、散热装置和方法 |
| CN108235666B (zh) * | 2018-02-11 | 2024-03-01 | 中国科学院工程热物理研究所 | 表面调控的柔性微槽群热沉、散热装置和方法 |
| US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
| US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
| US20250214088A1 (en) * | 2023-12-28 | 2025-07-03 | Lenovo Enterprise Solutions (Singapore) Pte Ltd. | Removing a ferromagnetic liquid from a surface |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003254046A1 (en) | 2004-02-02 |
| AU2003254046A8 (en) | 2004-02-02 |
| TW200409246A (en) | 2004-06-01 |
| JP2005538535A (ja) | 2005-12-15 |
| EP1531985A4 (en) | 2008-03-19 |
| WO2004008497B1 (en) | 2004-05-06 |
| EP1531985A2 (en) | 2005-05-25 |
| CN1681648A (zh) | 2005-10-12 |
| WO2004008497A3 (en) | 2004-04-01 |
| US20060040112A1 (en) | 2006-02-23 |
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