WO2004008497A2 - Thermal interconnect and interface systems, methods of production and uses thereof - Google Patents

Thermal interconnect and interface systems, methods of production and uses thereof Download PDF

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Publication number
WO2004008497A2
WO2004008497A2 PCT/US2003/022710 US0322710W WO2004008497A2 WO 2004008497 A2 WO2004008497 A2 WO 2004008497A2 US 0322710 W US0322710 W US 0322710W WO 2004008497 A2 WO2004008497 A2 WO 2004008497A2
Authority
WO
WIPO (PCT)
Prior art keywords
component
thermal
resin
layered
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/022710
Other languages
English (en)
French (fr)
Other versions
WO2004008497B1 (en
WO2004008497A3 (en
Inventor
Nancy Dean
Paula Knoll
Robert Townsend
My Nguyen
Colin Edie
Dan Curran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to JP2004521992A priority Critical patent/JP2005538535A/ja
Priority to AU2003254046A priority patent/AU2003254046A1/en
Priority to US10/519,337 priority patent/US20060040112A1/en
Priority to EP03764825A priority patent/EP1531985A4/en
Publication of WO2004008497A2 publication Critical patent/WO2004008497A2/en
Publication of WO2004008497A3 publication Critical patent/WO2004008497A3/en
Publication of WO2004008497B1 publication Critical patent/WO2004008497B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427Cooling by change of state, e.g. use of heat pipes
    • H01L23/4275Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/20436Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
    • H05K7/20445Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing the coupling element being an additional piece, e.g. thermal standoff
    • H05K7/20472Sheet interfaces
    • H05K7/20481Sheet interfaces characterised by the material composition exhibiting specific thermal properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal

Definitions

  • Thermal interconnect materials and layers may also comprise metals, metal alloys and suitable composite materials that meet the following design goals:
  • CTE coefficient of thermal expansion
  • a material with a low value for k such as thermal grease, performs well if the interface is thin, i.e. the "t" value is low. If the interface thickness increases by as little as 0.002 inches, the thermal performance can drop dramatically. Also, for such applications, differences in CTE between the mating components cause the gap to expand and contract with each temperature or power cycle. This variation of the interface thickness can cause pumping of fluid interface materials (such as grease) away from the interface.
  • the soft gel will be more "liquid-like".
  • the amine resin and the rubber compounds undergo a minimal amount of crosslinking (about 10% of the sites available for crosslinking are actually used in the crosslinking reaction) then the soft gel will be more "liquid-like".
  • the amine resin and the rubber compounds undergo a significant amount of crosslinking (about 40-60% of the sites available for crosslinking are actually used in the crosslinking reaction and possibly there is a measurable degree of intermolecular or intramolecular crosslinking between the rubber compounds themselves) then the gel would become thicker and more "solid-like".
  • the catalyst is an organic acid, such as carboxylic, acetic, formic, benzoic, salicylic, dicarboxylic, oxalic, phthalic, sebacic, adipic, oleic, palmitic, stearic, phenylstearic, amino acids and sulfonic acid.
  • organic acid such as carboxylic, acetic, formic, benzoic, salicylic, dicarboxylic, oxalic, phthalic, sebacic, adipic, oleic, palmitic, stearic, phenylstearic, amino acids and sulfonic acid.
  • the alloy includes an element, material, compound or composition that improves the wettability of the alloy to the heat spreader. It should be understood that in this application, improving the wettability of the alloy comprises reducing the amount of surface oxides. Suitable elements that improve wettability are gold, calcium, cobalt, chromium, copper, iron, manganese, magnesium, gallium, molybdenum, nickel, phosphorus, palladium, platinum, tin, tantalum, titanium, vanadium, tungsten, zinc, and/or zirconium.
  • the thermal interface layer Once the thermal interface layer is deposited it is understood that it will have a relatively high thermal conductivity as compared to conventional thermal adhesives and other thermal layers. Additional layers, such as a metallized silicon die can be soldered directly to the thermal interconnect layer without the use of such damaging materials as corrosive fluxes that may be needed to remove oxides of the materials, such as nickel, used to produce the thermal spreader.
  • Ninyl Q resins are also clear reinforcing additives for addition cure elastomers.
  • Examples of vinyl Q resin dispersions that have at least about 20%> Q-resin are NQM-135 (DMS-V41 Base), NQM-146 (DMS-N46 Base), and VQX-221 (50% in xylene Base).
  • the resin mixture can be cured at either at room temperature or at elevated temperatures to form a compliant elastomer.
  • the reaction is via hydrosilylation (addition cure) of vinyl functional siloxanes by hydride functional siloxanes in the presence of a catalyst, such as platinum complexes or nickel complexes.
  • a catalyst such as platinum complexes or nickel complexes.
  • Preferred platinum catalysts are SIP6830.0, SIP6832.0, and platinum- vinylsiloxane.
  • Contemplated examples of vinyl silicone include vinyl terminated polydimethyl siloxanes that have a molecular weight of about 10000 to 50000.
  • Contemplated examples of hydride functional siloxane include methylhydrosiloxane-dimethylsiloxane copolymers that have a molecular weight about 500 to 5000. Physical properties can be varied from a very soft gel material at a very low crosslink density to a tough elastomer network of higher crosslink density.
  • solder materials as previously disclosed, that are dispersed in the resin mixture are contemplated to be any suitable solder material for the desired application.
  • solder materials are indium tin (InSn) complexes, indium silver (InAg) complexes and alloys, indium-based compounds, tin silver copper complexes (SnAgCu), tin bismuth complexes and alloys (SnBi), and aluminum-based compounds and alloys. Of these, especially contemplated solder materials are those materials that comprise indium.
  • the release liner is (short one preferably) removed to expose the polymer solder material to apply the material to the component.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
PCT/US2003/022710 2002-07-15 2003-07-15 Thermal interconnect and interface systems, methods of production and uses thereof Ceased WO2004008497A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004521992A JP2005538535A (ja) 2002-07-15 2003-07-15 熱的インターコネクトおよびインターフェースシステム、製造方法およびその使用
AU2003254046A AU2003254046A1 (en) 2002-07-15 2003-07-15 Thermal interconnect and interface systems, methods of production and uses thereof
US10/519,337 US20060040112A1 (en) 2002-07-15 2003-07-15 Thermal interconnect and interface systems, methods of production and uses thereof
EP03764825A EP1531985A4 (en) 2002-07-15 2003-07-15 THERMAL CONNECTING AND BORDER AREA SYSTEMS, MANUFACTURING METHOD AND USES THEREOF

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39629402P 2002-07-15 2002-07-15
US60/396,294 2002-07-15

Publications (3)

Publication Number Publication Date
WO2004008497A2 true WO2004008497A2 (en) 2004-01-22
WO2004008497A3 WO2004008497A3 (en) 2004-04-01
WO2004008497B1 WO2004008497B1 (en) 2004-05-06

Family

ID=30116003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/022710 Ceased WO2004008497A2 (en) 2002-07-15 2003-07-15 Thermal interconnect and interface systems, methods of production and uses thereof

Country Status (7)

Country Link
US (1) US20060040112A1 (enExample)
EP (1) EP1531985A4 (enExample)
JP (1) JP2005538535A (enExample)
CN (1) CN1681648A (enExample)
AU (1) AU2003254046A1 (enExample)
TW (1) TW200409246A (enExample)
WO (1) WO2004008497A2 (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141273B2 (en) * 2003-10-07 2006-11-28 Shin-Etsu Chemical Co., Ltd. Curable organopolysiloxane composition and semiconductor device
DE102005045767A1 (de) * 2005-09-23 2007-05-24 Infineon Technologies Ag Halbleiterbauteil mit Kunststoffgehäusemasse und Verfahren zur Herstellung desselben
CN100389166C (zh) * 2004-04-29 2008-05-21 鸿富锦精密工业(深圳)有限公司 一种热界面材料及其制造方法
WO2016086410A1 (en) * 2014-12-05 2016-06-09 Honeywell International Inc. High performance thermal interface materials with low thermal impedance
CN108235666A (zh) * 2018-02-11 2018-06-29 中国科学院工程热物理研究所 表面调控的柔性微槽群热沉、散热装置和方法
US10155894B2 (en) 2014-07-07 2018-12-18 Honeywell International Inc. Thermal interface material with ion scavenger
US10174433B2 (en) 2013-12-05 2019-01-08 Honeywell International Inc. Stannous methanesulfonate solution with adjusted pH
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
US10781349B2 (en) 2016-03-08 2020-09-22 Honeywell International Inc. Thermal interface material including crosslinker and multiple fillers
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
US20250214088A1 (en) * 2023-12-28 2025-07-03 Lenovo Enterprise Solutions (Singapore) Pte Ltd. Removing a ferromagnetic liquid from a surface

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7210227B2 (en) * 2002-11-26 2007-05-01 Intel Corporation Decreasing thermal contact resistance at a material interface
DE10319888A1 (de) 2003-04-25 2004-11-25 Siemens Ag Lotmaterial auf SnAgCu-Basis
US7261389B2 (en) * 2003-11-26 2007-08-28 Fuji Xerox Co., Ltd. Systems and methods for dissipating heat into a fluid ejector carriage device
US7192116B2 (en) * 2003-11-26 2007-03-20 Fuji Xerox Co., Ltd. Systems and methods for dissipating heat from a fluid ejector carriage
EP1731002A4 (en) * 2004-03-30 2010-05-26 Honeywell Int Inc HEAT DISTRIBUTION STRUCTURES, INTEGRATED CIRCUITS, METHOD FOR GENERATING HEAT DISTRIBUTION CONSTRUCTIONS, AND METHOD FOR GENERATING INTEGRATED CIRCUITS
JP2005317796A (ja) * 2004-04-28 2005-11-10 Toshiba Corp ポンプ、冷却装置および電子機器
US7319048B2 (en) * 2004-09-03 2008-01-15 Intel Corporation Electronic assemblies having a low processing temperature
US20070069373A1 (en) * 2005-09-29 2007-03-29 Roth Arti P Device with surface cooling and method of making
US20070148467A1 (en) * 2005-12-23 2007-06-28 World Properties, Inc. Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom
US20070256783A1 (en) * 2006-05-08 2007-11-08 Dietz Raymond L Thermally enhanced adhesive paste
US8344523B2 (en) 2006-05-08 2013-01-01 Diemat, Inc. Conductive composition
US20080296756A1 (en) * 2007-05-30 2008-12-04 Koch James L Heat spreader compositions and materials, integrated circuitry, methods of production and uses thereof
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
EP2188834A4 (en) * 2007-09-11 2014-03-19 Dow Corning COMPOSITE, THERMAL INTERMEDIATE MATERIAL WITH THE COMPOSITE AND METHOD FOR ITS MANUFACTURE AND USE
KR20100069667A (ko) * 2007-09-11 2010-06-24 다우 코닝 코포레이션 열계면재료, 열계면재료를 포함하는 전자장치, 그리고 이들의 제조방법 및 용도
US20090111925A1 (en) * 2007-10-31 2009-04-30 Burnham Kikue S Thermal interface materials, methods of production and uses thereof
WO2009114372A2 (en) * 2008-03-13 2009-09-17 Honeywell International Inc. Thermal interconnect and integrated interface systems, methods of production and uses thereof
KR20100062550A (ko) * 2008-12-02 2010-06-10 삼성전기주식회사 패턴부가 형성된 솔더 레지스트층을 구비한 패키지 기판 및그 제조방법
CN102341474B (zh) 2009-03-02 2014-09-24 霍尼韦尔国际公司 热界面材料及制造和使用它的方法
WO2014074538A1 (en) * 2012-11-09 2014-05-15 3M Innovative Properties Company Thermal interface compositions and methods for making and using same
US9738976B2 (en) 2013-02-27 2017-08-22 Ioxus, Inc. Energy storage device assembly
CN105190944B (zh) * 2013-02-27 2018-08-17 翱旭公司 能量存储装置组件
US9899643B2 (en) 2013-02-27 2018-02-20 Ioxus, Inc. Energy storage device assembly
US9892868B2 (en) 2013-06-21 2018-02-13 Ioxus, Inc. Energy storage device assembly
US9826662B2 (en) * 2013-12-12 2017-11-21 General Electric Company Reusable phase-change thermal interface structures
JP6320331B2 (ja) * 2015-03-16 2018-05-09 三菱電機株式会社 電力用半導体装置
CN105441034A (zh) * 2015-12-03 2016-03-30 深圳德邦界面材料有限公司 一种橡胶改性的相变导热界面材料及制备方法
FR3061989B1 (fr) * 2017-01-18 2020-02-14 Safran Procede de fabrication d'un module electronique de puissance par fabrication additive, substrat et module associes
CN116640366A (zh) * 2023-06-27 2023-08-25 广东力王新材料有限公司 一种橡胶相变材料及其制备工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2228814B1 (enExample) * 1973-05-11 1975-11-21 Rhone Poulenc Ind
EP0042693B1 (en) * 1980-06-21 1985-03-27 LUCAS INDUSTRIES public limited company Semi-conductor power device assembly and method of manufacture thereof
US4584336A (en) * 1984-10-29 1986-04-22 Sws Silicones Corporation Thermally conductive room temperature vulcanizable compositions
US5440230A (en) * 1993-04-02 1995-08-08 Heflinger; Bruce L. Combinatorial signature for component identification
US5679457A (en) * 1995-05-19 1997-10-21 The Bergquist Company Thermally conductive interface for electronic devices
US5847929A (en) * 1996-06-28 1998-12-08 International Business Machines Corporation Attaching heat sinks directly to flip chips and ceramic chip carriers
US6084775A (en) * 1998-12-09 2000-07-04 International Business Machines Corporation Heatsink and package structures with fusible release layer
US6238596B1 (en) * 1999-03-09 2001-05-29 Johnson Matthey Electronics, Inc. Compliant and crosslinkable thermal interface materials
US6605238B2 (en) * 1999-09-17 2003-08-12 Honeywell International Inc. Compliant and crosslinkable thermal interface materials
US6653730B2 (en) * 2000-12-14 2003-11-25 Intel Corporation Electronic assembly with high capacity thermal interface

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141273B2 (en) * 2003-10-07 2006-11-28 Shin-Etsu Chemical Co., Ltd. Curable organopolysiloxane composition and semiconductor device
CN100389166C (zh) * 2004-04-29 2008-05-21 鸿富锦精密工业(深圳)有限公司 一种热界面材料及其制造方法
DE102005045767A1 (de) * 2005-09-23 2007-05-24 Infineon Technologies Ag Halbleiterbauteil mit Kunststoffgehäusemasse und Verfahren zur Herstellung desselben
DE102005045767B4 (de) * 2005-09-23 2012-03-29 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils mit Kunststoffgehäusemasse
US10174433B2 (en) 2013-12-05 2019-01-08 Honeywell International Inc. Stannous methanesulfonate solution with adjusted pH
US10428257B2 (en) 2014-07-07 2019-10-01 Honeywell International Inc. Thermal interface material with ion scavenger
US10155894B2 (en) 2014-07-07 2018-12-18 Honeywell International Inc. Thermal interface material with ion scavenger
US10287471B2 (en) 2014-12-05 2019-05-14 Honeywell International Inc. High performance thermal interface materials with low thermal impedance
WO2016086410A1 (en) * 2014-12-05 2016-06-09 Honeywell International Inc. High performance thermal interface materials with low thermal impedance
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
US10781349B2 (en) 2016-03-08 2020-09-22 Honeywell International Inc. Thermal interface material including crosslinker and multiple fillers
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
CN108235666A (zh) * 2018-02-11 2018-06-29 中国科学院工程热物理研究所 表面调控的柔性微槽群热沉、散热装置和方法
CN108235666B (zh) * 2018-02-11 2024-03-01 中国科学院工程热物理研究所 表面调控的柔性微槽群热沉、散热装置和方法
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
US20250214088A1 (en) * 2023-12-28 2025-07-03 Lenovo Enterprise Solutions (Singapore) Pte Ltd. Removing a ferromagnetic liquid from a surface

Also Published As

Publication number Publication date
AU2003254046A1 (en) 2004-02-02
AU2003254046A8 (en) 2004-02-02
TW200409246A (en) 2004-06-01
JP2005538535A (ja) 2005-12-15
EP1531985A4 (en) 2008-03-19
WO2004008497B1 (en) 2004-05-06
EP1531985A2 (en) 2005-05-25
CN1681648A (zh) 2005-10-12
WO2004008497A3 (en) 2004-04-01
US20060040112A1 (en) 2006-02-23

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