WO2003104162A1 - Ceramique a memoire de forme et son procede de fabrication - Google Patents

Ceramique a memoire de forme et son procede de fabrication Download PDF

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Publication number
WO2003104162A1
WO2003104162A1 PCT/CN2003/000302 CN0300302W WO03104162A1 WO 2003104162 A1 WO2003104162 A1 WO 2003104162A1 CN 0300302 W CN0300302 W CN 0300302W WO 03104162 A1 WO03104162 A1 WO 03104162A1
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shape memory
ceramic
mol
memory ceramic
shape
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PCT/CN2003/000302
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French (fr)
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Zuyao Xu
Xuejun Jin
Yulong Zhang
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Emerson Electric (China) Holdings Co., Ltd.
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Priority to AU2003236160A priority Critical patent/AU2003236160A1/en
Publication of WO2003104162A1 publication Critical patent/WO2003104162A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/486—Fine ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3229—Cerium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Definitions

  • the present invention relates to a shape memory ceramic, and more particularly to a shape memory ceramic based on cerium and yttrium-containing zirconia. Background technique
  • zirconium dioxide (Zr0 2) known as the research and development of a shape memory ceramics group are: magnesium (Mg) 3 ⁇ 40 2 of shape memory ceramics, cerium (Ce) of a shape memory ceramics Zr0 2 And yttrium (Y) -containing ZrO 2 shape memory ceramics and other binary ZrO 2 based shape memory ceramics.
  • Mg magnesium
  • Ce cerium
  • Y yttrium
  • ZrO 2 based shape memory ceramics zirconium dioxide
  • ⁇ 1 2 base ceramics it usually has high strength and toughness through the stress-induced t ⁇ m martensite transformation.
  • the added components mentioned above can stabilize the Zr0 2 ceramics or crystals.
  • the stress-induced martensite phase exhibits a shape memory effect (SME) by inverse phase transformation by heating, that is, by giving a temperature change to the shape memory material, it can automatically perform work to restore its shape.
  • SME shape memory effect
  • the shape memory Zr0 2 based ceramic containing the MgO, MgO play the role of a partially stabilized Zr0 2 ceramics.
  • Zr0 2 -based shape memory ceramics containing Y 2 0 3 or Ce0 2 , Y 2 O 3 or. 60 2 plays the role of stabilizing the tetragonal Zr0 2 polycrystal, so they all have shape memory effect, and their operating temperature is hundreds of degrees higher than that of general metal-based shape memory alloys, and they have the characteristics of ceramic materials.
  • the performance indicators of the shape memory effect include shape recovery rate and reversible strain.
  • shape memory ceramics In order to use shape memory ceramics in the fields of instrumentation, automatic control, engineering measurement and sensing technology, it is always desirable to obtain shape memory ceramics with high shape recovery rate and recoverable strain and which can be applied.
  • shape memory ceramics In order to use shape memory ceramics in the fields of instrumentation, automatic control, engineering measurement and sensing technology, it is always desirable to obtain shape memory ceramics with high shape recovery rate and recoverable strain and which can be applied.
  • the existing binary 3 ⁇ 4 2 2 -based shape memory ceramics cannot meet this requirement.
  • MVSwain revealed a Zr0 2 -based shape memory ceramic containing 9.4 mol% MgO with a grain size of about 50 ⁇ m. At four o'clock In the bending test, the shape can be recovered when heated above 600 ° C, but the recovery or recovery strain is small, only ⁇ 0.42%.
  • An object of the present invention is to provide a zirconia-based shape memory ceramic containing cerium and yttrium.
  • the shape memory ceramic can achieve a shape recovery rate of up to 95 to 100%, a recoverable strain of more than 1%, and 3 to 4 % Pseudo-elasticity.
  • Another object of the present invention is to provide a method for preparing such a shape memory ceramic.
  • One aspect of the present invention provides a shape memory ceramic based on cerium and yttrium-containing zirconia, the composition range of which is: 7-10 mol% CeO 2 , 0.2-0.8 mol% Y 2 0 3 and the balance is Zr0 2 .
  • the shape memory ceramics preferably have a composition range of 7.5 to 8.5 mol% Ce0 2 , 0.45-0.55 mol% Y 2 0 3 and a balance of Zr0 2 .
  • the shape memory ceramic is a tetragonal zirconia polycrystalline ceramic, which has pseudo-elasticity of 5% compressive strain which can reach 3 ⁇ 4% under uniaxial compressive stress.
  • the tetragonal zirconia polycrystalline ceramics still have a shape recovery rate of 95-100% when the recoverable strain reaches 1.2%.
  • Another aspect of the present invention provides a method for preparing a shape memory ceramic, wherein the following steps are used: preparing the superfine powder of each component by a co-precipitation method, and sintering in air at 1500 ⁇ 20 ° C for 4 ⁇ 6 hours, After sintering, it was gradually cooled to obtain a tetragonal zirconia polycrystalline ceramic bulk material having an average grain size of 0.9 to 1.1 ⁇ m and a density of 5.9 to 6.1 g / cm 3 .
  • the present invention obtains Ce and Y-containing & 0 2 shape memory ceramics with better shape memory effect (SME), which can recover the strain 95-100 ° / at 1.2%. Shape recovery rate, while maintaining high operating temperature and 3 ⁇ 4% pseudo-elastic recovery.
  • Fig. 1 is a scanning electron micrograph of 8 mol% cerium dioxide-0.5 mol yttrium trioxide-zirconia.
  • Figure 2 is a stress-strain-temperature curve of a shape memory effect containing 8 mol% cerium oxide -0.5 mol yttrium trioxide-zirconia. detailed description
  • tetragonal zirconia polycrystalline bulk material with an average grain size of 1.06 ⁇ m and a density of 6.03 g / cm 3 can be prepared, as shown in FIG. 1.
  • the test data of the recoverable strain and the shape recovery rate of the polycrystalline ceramic are listed in Table 1, and the corresponding temperature-strain and stress-strain relationship curves based on the test data are shown in FIG. 2. It can be seen from the test results that when the recoverable strain is 1.18%, the shape recovery rate is still 100%.
  • the calculation formula calculates the shape recovery rate, and obtains the shape recovery rate and recoverable strain as described above. 8mol% CeO 2 -0.5mol% Y 2 O 3 -ZrO 2 Shape Memory Effect
  • a shape memory ceramic having a composition of 7.5 mol% Ce0 2 , 0.45 mol% Y 2 0 3 and a balance of Zr0 2 was prepared by using the same preparation and sintering method as in Example 1.
  • the tetragonal zirconia block obtained in Example 1 was The same test method was used, and the recoverable strain was 1.2% and the shape recovery was 100%.
  • Example 3
  • a shape memory ceramic having a composition of 8.5 mol% CeO 2 , 0.55 mol% Y 2 0 3 and a balance of Zr0 2 was prepared using the same preparation and sintering method as in Example 1.
  • the tetragonal zirconia block obtained in Example 1 was The same test method was used to test, and the recoverable strain was 1.1% and the shape recovery rate was 100%.
  • a shape memory ceramic having a composition of 8 mol% Ce0 2 , 0.6 mol% ⁇ 2 0 3 and a balance of Zr0 2 was prepared by using the same preparation and sintering method as in Example 1.
  • the tetragonal zirconia block obtained by Example 1 The same test method was used to test, and the recoverable strain was 1.0%, and the shape recovery rate was 95 ⁇ 100%.
  • the performance index of the shape memory material is also achieved in this embodiment, However, the increase of the content of Y 2 O 3 in the shape memory ceramics of Zr0 2 will affect the increase of recoverable strain and shape recovery rate.
  • a shape memory ceramic with 8 mol% Ce0 2 , 0.75 mol% Y 2 O 3 and the balance of ZrO 2 was prepared by using the same preparation and sintering method as in Example 1.
  • the tetragonal zirconia block obtained in Example 1 The same test method was used to test, and the recoverable strain was 1.0%, and the shape recovery rate was 95 100%.
  • the obtained test data is substantially close to the test result of Example 4.
  • the material series of the present invention is a brand-new ternary Zr0 2 -based shape memory ceramic. When the recoverable strain reaches 1.0 to 1.2%, the shape recovery rate is 90 to 100%. Both the shape recovery rate and recoverable strain are much higher than those of binary shape memory ceramics containing Ce.
  • the materials according to the present invention are particularly suitable for special environments where high operating temperature, corrosion resistance, insulation and high strength shape memory elements are required.

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  • Ceramic Engineering (AREA)
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Description

一种形状记忆陶瓷及其制备方法 技术领域
本发明涉及一种形状记忆陶瓷， 尤其是涉及一种以含铈和钇的二氧 化锆为基的形状记忆陶瓷。 背景技术
近年来， 以二氧化锆 （Zr02) 为基的形状记忆陶瓷的研究和开发方 面已知的有： 含镁（Mg) 的 ¾02形状记忆陶瓷、 含铈 （Ce) 的 Zr02形 状记忆陶瓷和含钇（Y) 的 Zr02形状记忆陶瓷等二元 ZrO2基形状记忆陶 瓷。 对于∑1 2基陶瓷， 它通常是通过应力诱发 t → m马氏体相变而具 有高强度和韧性， 同时上述所加的各成分可起到稳定 Zr02陶瓷或晶体作 用。 应力诱发马氏体相通过加热逆相变而呈现形状记忆效应（SME)， 即 给予形状记忆材料以温度变化， 就能自动作功而回复形状。 举例来说， 在含有 MgO的 Zr02基形状记忆陶瓷中， MgO起到部分稳定 Zr02陶瓷的 作用。 在含有 Y203或 Ce02的 Zr02基形状记忆陶瓷中， Y2O3或。602起 到稳定四方 Zr02多晶的作用， 因而它们都具有形状记忆效应， 而且其动 作温度较一般金属基形状记忆合金高出数百度， 且兼具陶瓷材料的特点。 尽管它还存在着许多不足， 但有较好的研究和应用前景， 已引起业界的 广泛兴趣。
形状记忆效应的性能指标有形状恢复率 (Shape recovery rate)和可恢 复应变 (reversible strain)等。 为了将形状记忆陶瓷用于仪器仪表、 自动控 制、 工程测量和传感技术等领域， 人们总是希望得到形状恢复率和可恢 复应变都较高的和可供应用的形状记忆陶瓷。 但是， 现有的二元 ¾02基 形状记忆陶瓷并不能满足这种要求。
例如， 在 1986年美国的 《自然》杂志中， M.V.Swain揭示了一种含 有 9.4 mol%MgO的 Zr02基形状记忆陶瓷， 其晶粒约为 50 μ ιτι。 在四点 弯曲试验中， 加热至 600°C以上时其形状能恢复，但可回复或恢复应变较 小， 仅为〜 0.42%。
在 1988年美国 J. American Ceramics Society杂志上， P.E.Reyes-Morel 等人公开了一种 12 mol% Ce-TZP陶瓷，并发现该陶瓷具有伪弹性和形状 记忆效应。 在单轴压缩时晶粒尺寸从 1.0 μ m到 2.8 μ m的材料形状恢复 率为 ≤90%， 可恢复应变为 ≤1%。 由此可见， 含 Ce的 Zr02的二元形状 记忆陶瓷的主要问题为可回复应变较小和形状恢复不完全。
本发明的一个目的是为了提供一种含铈和钇的二氧化锆基形状记忆 陶瓷， 该形状记忆陶瓷可达到高达 95〜 100%的形状恢复率、 1 %以上的 可回复应变和 3〜4%的伪弹性。
本发明的另一个目的是提供这种形状记忆陶瓷的制备方法。 发明内容
本发明的一个方面提供以含铈和钇的二氧化锆为基的形状记忆陶 瓷，其成分范围为： 7-10 mol % CeO2， 0.2-0.8 mol % Y203和余量为 Zr02。
如以上所述的形状记忆陶瓷， 其成分范围较佳为： 7.5~8.5 mol % Ce02， 0.45-0.55 mol % Y203和余量为 Zr02。
所述的形状记忆陶瓷为四方氧化锆多晶陶瓷，其具有在单轴压应力下 5%的压缩应变可达到 3〜4%的伪弹性。
如上所述四方氧化锆多晶陶瓷在可恢复应变达 1.2%时仍有 95~100% 的形状恢复率。
本发明的另一个方面提供一种形状记忆陶瓷的制备方法，其中，采用 下列步骤： 用共沉淀法制备所述各成分的超细粉， 在 1500±20°C空气中 烧结 4〜6小时， 烧结后逐渐冷却， 得到平均晶粒尺寸为 0.9~1.1 μιη和致 密度为 5.9〜6.1 g/cm3的四方氧化锆多晶陶瓷块材。
本发明通过优化成分、 烧结工艺和热处理等手段， 获得具有更佳形 状记忆效应 （SME) 的含 Ce和 Y的 &02形状记忆陶瓷， 其可回复应变 达 1.2%时有 95-100 °/。的形状恢复率， 同时保持高的动作温度和 3~4%的 伪弹性恢复。 附图说明
图 1是一含有 8mol%二氧化铈 -0.5mol%三氧化二钇-二氧化锆的扫描 电镜照片。
图 2是一含有 8mol%二氧化铈 -0.5mol%三氧化二钇-二氧化锆的形状 记忆效应的应力-应变-温度曲线图。 具体实施方式
实施例 1
为制取成分为 8 mol % Ce02、 0.5 mol % Y203和余量为 Zr02的形状 记忆陶瓷， 用共沉淀法制备各成分的超细粉， 在 1500°C空气中烧结 6小 时， 随后逐渐冷却。
釆用这种方法可制得平均晶粒尺寸为 1.06μηι和致密度为 6.03 g/cm3 的四方氧化锆多晶块材， 如图 1 所示。 该多晶陶瓷的可恢复应变和形状 恢复率的测试数据列于表 1，而根据上述测试数据制作的相应的温度一应 变和应力一应变的关系曲线示于图 2。从测试结果可看到，可恢复应变为 1.18 %时， 形状恢复率仍为 100 %。 测试时，测得试样的压缩前长 = 6.974 mm,压缩后长 10 = 6.892，升 温至 600°C再冷至室温长 12 = 6.974,并通过形状恢复率 ?7 = f χ 100%的
一
计算公式算出形状恢复率， 得到如前所述的形状恢复率和可恢复应变。 8mol%CeO2-0.5mol%Y2O3-ZrO2材料形状记忆效应
Figure imgf000005_0001
实施例 2
使用如同实施例 1的制备和烧结方法制取成分为 7.5 mol % Ce02， 0.45 mol % Y203和余量为 Zr02的形状记忆陶瓷， 制得的四方氧化锆块材经实 施例 1的同样的测试方法进行测试， 得到可恢复应变为 1.2 %， 形状恢复 率为 100 %。 实施例 3
使用如同实施例 1的制备和烧结方法制取成分为 8.5 mol % CeO2，0.55 mol % Y203和余量为 Zr02的形状记忆陶瓷， 制得的四方氧化锆块材经实 施例 1的同样的测试方法进行测试， 得到可恢复应变为 1.1%， 形状恢复 率为 100 %。 实施例 4
使用如同实施例 1的制备和烧结方法制取成分为 8 mol % Ce02， 0.6 mol % ¥203和余量为 Zr02的形状记忆陶瓷， 制得的四方氧化锆块材经实 施例 1的同样的测试方法进行测试， 得到可恢复应变为 1.0 %， 形状恢复 率为 95~100 %。 很明显， 虽然本实施例也达到形状记忆材料性能指标， 但在 Zr02的形状记忆陶瓷中 Y2O3含量的增加会影响到可恢复应变和形 状恢复率的提高。 实施例 5
使用如同实施例 1的制备和烧结方法制取成分为 8 mol % Ce02、 0.75 mol % Y2O3和余量为 ZrO2的形状记忆陶瓷， 制得的四方氧化锆块材经实 施例 1的同样的测试方法进行测试， 得到可恢复应变为 1.0 %， 形状恢复 率为 95 100 %。 所得到的测试数据基本上接近实施例 4的测试结果。 本发明材料系列为全新的三元 Zr02基形状记忆陶瓷， 在可恢复应变 达到 1.0~1.2%的情况下， 形状恢复率均为 90〜100%。 形状恢复率和可恢 复应变均比含 Ce的二元形状记忆陶瓷有很大的提高。根据本发明的材料 特别适用于特殊环境， 如需高动作温度、 耐蚀、 绝缘和高强度的形状记 忆元件。

Claims

权 利 要 求 书
1.一种形状记忆陶瓷， 其特征在于， 所述的形状记忆陶瓷以含铈 和钇的二氧化锆为基， 其成分范围为： 7〜10 mol % Ce02， 0.2-0.8 mol % Y203和余量为 Zr02。
2.如权利要求 1所述的形状记忆陶瓷， 其中， 所述的形状记忆陶 瓷成分范围为： 7.5〜8.5 mol % CeO2， 0.45~0.55 mol % Y2O3和余量为 ¾02。
3.如权利要求 1或 2所述的形状记忆陶瓷， 其中， 所述的形状记 忆陶瓷为四方氧化锆多晶陶瓷，其具有在单轴压应力下 5%的压缩应变 可达到 3~4%的伪弹性。
4.如权利要求 3所述的形状记忆陶瓷， 其中， 所述四方氧化锆多 晶陶瓷在可恢复应变达 1.2%时有 95~100%的形状恢复率。
5.—种形状记忆陶瓷的制备方法， 其中， 釆用下列步骤： 用共沉淀法制备所述各成分的超细粉， 在 1500±20°C空气中烧结 4〜6小时， 烧结后逐渐冷却， 得到平均晶粒尺寸为 0.9〜1.1 μπι和致密 度为 5.9〜6.1 g/cm3的四方氧化锆多晶陶瓷块材。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014138316A1 (en) * 2013-03-08 2014-09-12 Massachusetts Institute Of Technology Oligocrystalline ceramic structures for enhanced shape memory and pseudoelastic effects
US9018117B2 (en) 2012-07-02 2015-04-28 Massachusetts Institute Of Technology Ceramic structures for enhanced shape memory and pseudoelastic effects
US9548678B2 (en) 2012-07-02 2017-01-17 Massachusetts Institute Of Technology Electric field activation of shape memory ceramics

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104496470B (zh) * 2014-12-16 2017-01-18 广东省工业技术研究院(广州有色金属研究院) 一种高弹性纳米氧化锆基陶瓷的制备方法
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525464A (en) * 1984-06-12 1985-06-25 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Ceramic body of zirconium dioxide (ZrO2) and method for its preparation
JPS6172683A (ja) * 1984-09-14 1986-04-14 東芝モノフラックス株式会社 ジルコニアセラミツクスの製造方法
US4767730A (en) * 1983-07-21 1988-08-30 Ngk Insulators, Ltd. Ceramic shape memory element
US4900492A (en) * 1984-04-27 1990-02-13 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. High-strength and temperature-stable formed bodies of zirconium dioxide
US5696040A (en) * 1996-12-20 1997-12-09 Eastiman Kodak Company Ceramic article containing a core comprising zirconia and a shell comprising zirconium boride
CN1253126A (zh) * 1999-11-19 2000-05-17 中国科学院上海硅酸盐研究所 低温液相烧结氧化锆增韧陶瓷材料

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4767730A (en) * 1983-07-21 1988-08-30 Ngk Insulators, Ltd. Ceramic shape memory element
US4900492A (en) * 1984-04-27 1990-02-13 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. High-strength and temperature-stable formed bodies of zirconium dioxide
US4525464A (en) * 1984-06-12 1985-06-25 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Ceramic body of zirconium dioxide (ZrO2) and method for its preparation
JPS6172683A (ja) * 1984-09-14 1986-04-14 東芝モノフラックス株式会社 ジルコニアセラミツクスの製造方法
US5696040A (en) * 1996-12-20 1997-12-09 Eastiman Kodak Company Ceramic article containing a core comprising zirconia and a shell comprising zirconium boride
CN1253126A (zh) * 1999-11-19 2000-05-17 中国科学院上海硅酸盐研究所 低温液相烧结氧化锆增韧陶瓷材料

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RONG QIGUANG: "Current developmental of shape memory effects in ceramics", FUNCTION MATERIAL, no. 6, June 1996 (1996-06-01), pages 487 - 505 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9018117B2 (en) 2012-07-02 2015-04-28 Massachusetts Institute Of Technology Ceramic structures for enhanced shape memory and pseudoelastic effects
US9548678B2 (en) 2012-07-02 2017-01-17 Massachusetts Institute Of Technology Electric field activation of shape memory ceramics
US10364804B2 (en) 2012-07-02 2019-07-30 Massachusetts Institute Of Technology Electric field activation of shape memory ceramics
WO2014138316A1 (en) * 2013-03-08 2014-09-12 Massachusetts Institute Of Technology Oligocrystalline ceramic structures for enhanced shape memory and pseudoelastic effects
US9512039B2 (en) 2013-03-08 2016-12-06 Massachusetts Institute Of Technology Oligocrystalline ceramic structures for enhanced shape memory and pseudoelastic effects

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