WO2003103030A1 - Dispositif et procede de traitement de substrat, et injecteur y relatif - Google Patents

Dispositif et procede de traitement de substrat, et injecteur y relatif Download PDF

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Publication number
WO2003103030A1
WO2003103030A1 PCT/JP2003/005665 JP0305665W WO03103030A1 WO 2003103030 A1 WO2003103030 A1 WO 2003103030A1 JP 0305665 W JP0305665 W JP 0305665W WO 03103030 A1 WO03103030 A1 WO 03103030A1
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WIPO (PCT)
Prior art keywords
liquid
substrate
substrate processing
hole
nozzle
Prior art date
Application number
PCT/JP2003/005665
Other languages
English (en)
Japanese (ja)
Inventor
Osamu Miyahara
Masahito Hamada
Yukio Kiba
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to AU2003235846A priority Critical patent/AU2003235846A1/en
Publication of WO2003103030A1 publication Critical patent/WO2003103030A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for developing a resist pattern on a semiconductor substrate, for example, in a photolithography process in the manufacture of a semiconductor device, and a rinsing processing nozzle used in these apparatuses.
  • a photoresist is applied to the surface of a semiconductor wafer (hereinafter, referred to as “wafer”), a mask pattern is exposed on a resist, and developed to develop a resist pattern on the wafer surface. Is formed.
  • a developing solution is supplied onto a wafer, and the wafer is left as it is for a predetermined time to proceed with development. Thereafter, for example, a rinsing liquid is supplied onto the wafer to wash away the developing liquid.
  • micelles aggregated state of micro-level flowing molecules
  • the micelles remain on the wafer due to electrostatic force or van der Waals force.
  • the pH shock ( ⁇ -shock) generated by the supply of the rinsing solution may cause insolubles to be deposited after the rinsing solution is supplied to the developing solution and the developing solution is washed away. Similarly, it easily adheres to the wafer.
  • resist Often insolubles are scraped off the polymer surface and the insolubles are re-attached.
  • the micelle-insoluble matter adheres to the wafer by a strong force such as an electrostatic force as described above, there is a problem that it cannot be removed by the current rinsing treatment. Disclosure of the invention
  • an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of removing impurities such as micelles and insolubles attached to a substrate, and a rinsing nozzle used for these. It is to provide.
  • a substrate processing apparatus of the present invention comprises: a holding unit that holds a substrate; a unit that supplies a processing liquid to the substrate held by the holding unit; And a rinsing means for discharging the liquid and the second liquid to disturb the processing liquid to remove impurities attached to the substrate, and to wash away the processing liquid.
  • the processing liquid, the first liquid, and the second liquid are discharged by rinsing the first liquid and the second liquid to the substrate to which the processing liquid is supplied. It is disturbed and this disturbing produces, for example, bubbles.
  • the disturbance and the _ bubbles exert a stress on the impurity, so that the impurity can be removed (hereinafter, this is referred to as a disturbance effect).
  • the rinsing means also has a function of washing out the processing liquid as in the conventional case, the processing time is not increased.
  • the processing liquid is, for example, a developer.
  • pure water can be used for the first liquid and the second liquid.
  • the holding unit further includes means for rotating the substrate, and discharges the first liquid and the second liquid while rotating the substrate.
  • means for rotating the substrate for example, if the first liquid and the second liquid are discharged to the center of the substrate, the mixed liquid of the first liquid and the second liquid flows on the substrate by the rotational centrifugal force. As a result, the kinetic energy of the disturbed liquid on the substrate surface increases, and the action of removing impurities can be enhanced.
  • the rinsing means includes: a first discharge section having a first hole for discharging the first liquid; and a second hole for discharging the second liquid. And a nozzle having a second discharge unit.
  • the size of the first hole and the second By making the size of the second hole different, the flow rate of the liquid discharged from the small-diameter hole can be made smaller than the flow rate of the liquid discharged from the large-diameter hole.
  • the flow velocity can be varied by adjusting the pressure of a pump or the like of the supply system.
  • a plurality of the second holes are provided around the first hole.
  • a nozzle is disposed on the center of the substrate, the first liquid is discharged from the first hole to the center of the substrate, and the second liquid is supplied from the plurality of second holes provided around the first hole. Is supplied in a circular shape on the first liquid diffused on the substrate. In this way, the disturbed liquid can be evenly dispersed on the substrate, and the action of removing impurities is improved. This is particularly effective when the substrate is rotated as described above.
  • the flow rate of the second liquid can be made smaller than that of the first liquid, and the disturbance effect such as the generation efficiency of bubbles can be reduced. Can be enhanced.
  • the diameter of the first hole is 1.5 mn! ⁇ 2.5 mm
  • the diameter of the second hole is 0.3 ⁇ 0.3 mm.
  • the reason why the diameter of the first hole is made in this way is that, when the liquid is discharged at a predetermined discharge pressure, if the diameter is smaller than 1.5 mm, the flow velocity of the liquid becomes too high, and the impact is caused by the impact. This is because there is a risk that the resist pattern may collapse. Also, the reason why the diameter of the second hole is set in this manner is that when the liquid is discharged at a predetermined discharge pressure, if the diameter is set to 0.7 mm or more, the flow rate becomes too large, and the liquid is discharged onto the substrate. This is because the second liquid also flows to the central part of the substrate, and the liquid stays, so that impurities are reattached and the removal action is reduced.
  • the discharge flow rate of the first liquid is 500 m 1 / m i! 9900 ml / min
  • the discharge flow rate of the second liquid is preferably 100 mil Zmin i500 ml / min.
  • the nozzle includes a groove provided between the first discharge unit and the second discharge unit.
  • a groove portion As compared with the case where the discharge surface of the first discharge portion and the discharge surface of the second discharge portion are the same, when discharging the liquid, the first liquid and the second liquid can be separated. The effect of preventing interference can be improved, and a disturbance effect can be reliably generated on the substrate.
  • a discharge direction of the first liquid is different from a discharge direction of the second liquid.
  • the second liquid when the discharge direction of the second liquid is directed obliquely inside the substrate with respect to the substrate surface, the second liquid is directed in a direction opposite to the direction in which the first liquid diffuses from the center of the substrate to the outside of the substrate. Is discharged, so for example Disturbing effects such as the generation rate of bubbles can be increased.
  • the rinsing means includes a first nozzle formed with a first hole for discharging the first liquid, and a second nozzle formed with a second hole for discharging the first liquid. Nozzles. In this way, two nozzles are prepared, and the first liquid and the second liquid are discharged from the nozzles, whereby a disturbing effect such as bubbles can be generated.
  • the flow rate of the second liquid can be made smaller than that of the first liquid as described above. As a result, the disturbed liquid flows smoothly from the central portion of the substrate to the peripheral portion, and the impurities can be removed, while generating a disturbing effect.
  • the first liquid is an alkaline solution
  • the second liquid is a neutral or alkaline solution having a lower pH value than the first liquid.
  • the first liquid and the second liquid are as neutral as possible.
  • the first shock refers to a phenomenon in which, for example, when two types of liquids having greatly different pH values are mixed, an impurity is generated, an impurity is generated on the substrate, and the substrate is re-adhered to the substrate. This phenomenon occurs, for example, when a liquid having a significantly different pH value from the treatment liquid is used as the first liquid, or when a liquid having a significantly different pH value from the first liquid is used as the second liquid.
  • the first solution can be converted to an alkaline solution having a pH value of 9 to 11 to obtain a first solution.
  • the second liquid can disturb the processing liquid together with the first liquid, and can wash away the first liquid on the processing liquid.
  • the first liquid becomes insoluble. Rinsing is performed so that the disassembly does not adhere to the substrate.
  • a neutral or alkaline solution having a pH value lower than that of the first solution, for example, a pH value of 7 to 8 is used to reduce the shock. Disturbance can be caused and the first liquid can be washed away. As a result, the disturbing effect can be further enhanced, and impurities such as the processing solution, micelles adhered to the substrate, and insolubles can be efficiently removed.
  • the second liquid is mixed with a third liquid having a lower pH value than the second liquid
  • the third liquid is mixed with the second liquid by the mixing means.
  • the first liquid and the second liquid used as the rinsing liquid are both alkaline. When the first liquid and the second liquid are deposited on the substrate, unnecessary reactions may occur.
  • the pH value of the second liquid can be reduced by mixing a neutral third liquid having a lower pH value than the second liquid, for example. It does not cause unnecessary reactions on the substrate.
  • a control unit is provided to control the amount of the third liquid mixed with the second liquid, so that the pH value of the second liquid does not suddenly change, thereby reducing the shock. There is nothing to cause.
  • control is performed such that the second liquid is discharged while the first liquid is discharged. Is provided. With such control, the first liquid and the second liquid are reliably disturbed on the processing liquid, and the processing liquid, impurities, and the like can be reliably removed.
  • One embodiment of the present invention further includes cleaning means for discharging the fourth liquid and the fifth liquid to the back surface of the substrate and disturbing the same to remove impurities attached to the back surface of the substrate.
  • the disturbance effect removes impurities adhering to the back of the substrate It can also be applied when doing.
  • the cleaning means By discharging the fourth liquid and the fifth liquid by the cleaning means, the fourth liquid and the fifth liquid are disturbed, and for example, bubbles are generated by the disturbance. These disturbing bubbles can remove the impurities by applying a stress to the impurities attached to the back surface of the substrate.
  • the cleaning means does not increase the processing time because it also has the function of washing away impurities removed from the substrate as in the conventional case.
  • pure water can be used for each of the fourth liquid and the fifth liquid.
  • the holding unit holds a back surface of the substrate from below the substrate, and has a through hole penetrating the holding unit.
  • a nozzle is provided below the holding unit, and discharges the fourth liquid and the fifth liquid toward the rear surface of the substrate so as to directly reach the rear surface of the substrate through the through hole.
  • the back surface of the substrate is held from below by the holding unit.
  • the fourth liquid and the fifth liquid discharged from the nozzle can pass through the through-hole of the holding portion, so that the fourth liquid and the fifth liquid are discharged from the held portion on the back surface of the substrate. Even if it reaches directly. As a result, the fourth liquid and the fifth liquid are disturbed on the back surface of the substrate, and the impurities attached to the back surface of the substrate can be reliably removed.
  • a substrate processing apparatus includes: a holding unit that holds a substrate; a unit that supplies a processing liquid to the substrate held by the holding unit; and a long shape. And a plurality of second holes are arranged in a row, and the first liquid and the second liquid are respectively transferred from the first hole and the second hole to the substrate to which the processing liquid is supplied. A nozzle for discharging the liquid to disturb the processing liquid to remove impurities adhering to the substrate, and for washing away the processing liquid.
  • the first hole and the plurality of first holes are provided in the longitudinal direction of the nozzle having a long shape.
  • the second liquid can be discharged from the plurality of holes outside the first liquid discharged at the center of the substrate.
  • a disturbing action such as generation of bubbles can be given in a short time to the entire surface of the substrate, and the efficiency of removing impurities can be increased.
  • the first liquid may be discharged from the first hole to the center of the substrate, and the second liquid may be discharged from the second hole to the outside of the substrate from the center.
  • the substrate processing method of the present invention includes: (a) a step of supplying a processing liquid to the substrate; and (b) discharging the first liquid and the second liquid to the substrate to which the processing liquid has been supplied. A step of disturbing the treatment liquid to remove impurities attached to the substrate and washing away the treatment liquid.
  • a disturbing action such as generation of bubbles can be generated, and this disturbing action gives stress to impurities. This makes it possible to remove the impurities.
  • the processing time is not increased.
  • the first liquid is discharged before the second liquid.
  • the first liquid is supplied onto the substrate, the first liquid is diffused to some extent on the substrate, and then the second liquid is discharged, so that the impact on the substrate due to the discharge of the second liquid is achieved. Can be reduced, and the collapse of the pattern can be avoided.
  • the pH value of the first liquid to, for example, 9 to 11 and the pH value of the second liquid to, for example, 7 to 8
  • the pH shock can be reduced.
  • the step (b) includes: (c) a step of discharging an alkaline solution as the first liquid; and (d) a step from the middle of the step (c). Discharging the alkaline liquid having a lower pH value than the first liquid as the second liquid. Since many processing liquids exhibit, for example, a developer having a pH value of about 10 to 12 and exhibit an alkaline property, the first solution has a pH value of, for example, 9 to 11 for an alkaline solution. By doing so, it is possible to reduce the adhesion of insoluble matter on the substrate surface when the first liquid is discharged. In addition, the second liquid needs to disturb the processing liquid together with the first liquid, and also needs to wash out the first liquid on the processing liquid.
  • first liquid and the second liquid are as neutral as possible.
  • pH shock refers to a case where a liquid having a greatly different pH value from the treatment liquid, for example, as the first liquid, or a liquid having a large pH value, for example, the first liquid as the second liquid. This refers to the phenomenon in which disturbed impurities adhere to the substrate when different liquids are used.
  • an acid-base reaction can be caused by the first liquid.
  • a neutral or alkaline solution having a pH value lower than that of the first solution for example, a pH value of 7 to 8 as the second solution
  • disturbance is caused while relaxing the pH shock.
  • the first liquid can be washed away.
  • impurities such as the processing solution, micelles adhered to the substrate, and insolubles can be efficiently removed.
  • One embodiment of the present invention further comprises: (e) mixing the second liquid with a third liquid having a lower pH value than the second liquid.
  • the pH value of the second liquid can be reduced by mixing the third liquid having a lower pH value than the second liquid.
  • the control unit to control the amount of the third liquid mixed with the second liquid, the pH value of the second liquid does not change suddenly, and the first hydraulic shock is reduced. There is nothing to wake up. As a result, the processing solution, micelles adhered to the substrate, Further, impurities such as insolubles can be efficiently removed.
  • the method further comprises the step of removing impurities attached to the back surface of the substrate.
  • a disturbing effect is exerted also on the back surface of the substrate, and it is possible to reliably remove impurities attached to the back surface of the substrate.
  • the nozzle of the present invention discharges the first liquid and the second liquid to the substrate to which the processing liquid has been supplied, disturbs the processing liquid to remove impurities attached to the substrate, and rinses the processing liquid.
  • a first discharge unit having a hole for discharging the first liquid, and a second discharge unit having a hole for discharging the second liquid. Have.
  • a disturbing action such as air bubbles can be generated, and this disturbing action becomes an impurity.
  • the impurities can be removed.
  • the processing time is not increased because it also has the function of washing away the processing liquid as in the past.
  • a nozzle according to another aspect of the present invention has a long shape, and discharges a first liquid and a second liquid to a substrate to which a processing liquid has been supplied, and disturbs the processing liquid.
  • a disturbance action such as generation of bubbles can be given to the entire surface of the substrate in a short time, and the efficiency of removing impurities can be increased.
  • the first liquid is discharged from the first hole to the center of the substrate, and the second liquid is discharged from the second hole to the outside of the substrate from the center. Just do it.
  • FIG. 1 is a plan view of a coating and developing apparatus to which the present invention is applied.
  • FIG. 2 is a front view of the coating and developing apparatus shown in FIG.
  • FIG. 3 is a rear view of the coating and developing apparatus shown in FIG.
  • FIG. 4 is a plan view of a developing unit according to one embodiment of the present invention.
  • FIG. 5 is a sectional view of the developing unit shown in FIG.
  • FIG. 6 is a perspective view showing a rinse nozzle movable by a rinse nozzle arm.
  • FIG. 7 is a side view showing the positional relationship between the rinsing nozzle and the wafer.
  • FIG. 8 is a sectional view of the rinse nozzle according to the first embodiment.
  • FIG. 9 is a plan view of the rinse nozzle shown in FIG.
  • FIG. 10 is a diagram showing the supply operation of the developer.
  • FIG. 11 is a plan view of a rinse nozzle according to another embodiment.
  • FIG. 12 is an enlarged sectional view of a rinse nozzle according to the second embodiment.
  • FIG. 13 is a plan view of a developing unit according to another embodiment.
  • FIG. 14 is a sectional view and a plan view of a rinse nozzle according to the third embodiment.
  • FIG. 15 is a plan view showing an operation when performing a rinsing process using the rinsing nozzle shown in FIG.
  • FIG. 16 is a plan view showing a modification of the rinse nozzle shown in FIG.
  • FIG. 17 is a diagram showing a modification of the supply system of the rinsing nozzle shown in FIG. 14 (
  • FIG. 18 is a graph comparing the incidence of defects when using the rinsing nozzle according to the related art and the present invention) .
  • FIG. 19 is a configuration diagram showing a rinsing liquid supply mechanism according to another embodiment.
  • FIG. 20 is a configuration diagram showing a rinsing liquid supply mechanism according to still another embodiment.
  • FIG. 21 is a diagram showing the timing at which the rinse liquid is discharged from the two rinse nozzles.
  • FIG. 22 is a configuration diagram showing a rinsing liquid supply mechanism according to still another embodiment.
  • FIG. 23 is a configuration diagram showing a rinsing liquid supply mechanism according to still another embodiment.
  • FIG. 24 is a configuration diagram showing a rinsing liquid supply mechanism according to still another embodiment.
  • FIG. 25 is a view showing a rinsing liquid supply mechanism according to still another embodiment.
  • FIGS. 1 to 3 are views showing the overall configuration of a coating and developing treatment apparatus according to an embodiment of the present invention, wherein FIG. 1 is a plan view, and FIGS. 2 and 3 are front and rear views.
  • the coating / developing apparatus 1 includes a plurality of semiconductor wafers W loaded into or removed from the apparatus 1 by a wafer cassette CR, for example, in units of 25 wafers.
  • a cassette station 10 for loading and unloading, and various single-wafer processing units that perform a predetermined process on one sheet wafer W in the coating and developing process are arranged in multiple stages at predetermined positions. It has a configuration in which a processing station 12 and an interface 14 for transferring a wafer W between an exposure apparatus 100 provided adjacent to the processing station 12 are integrally connected. are doing.
  • the cassette station 10 as shown in FIG.
  • a plurality of, for example, five wafer cassettes CR are provided at the positions of the projections 20 a on the cassette mounting table 20 with their respective wafer entrances facing the processing station 12.
  • a wafer carrier 22 that is placed in a line in the X direction and can move in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR is selected for each wafer cassette CR. It is intended to be accessed.
  • the wafer carrier 22 is configured to be rotatable in the 6> direction, and as shown in FIG. 3, is provided to a heat treatment system unit belonging to a third processing unit section G3 having a multi-stage configuration described later. Is also accessible.
  • the processing station 12 is provided with a third processing unit G3, a fourth processing unit G4 and a fifth processing unit G4 from the cassette station 10 side.
  • a first main wafer transfer device A1 is provided between the third processing unit G3 and the fourth processing unit G4. I have.
  • the first main wafer transfer body 16 includes a first processing unit G1, a third processing unit G3, and a fourth processing unit G4. It is installed so that it can be accessed selectively.
  • a second main wafer transfer device A2 is provided between the fourth processing unit G4 and the fifth processing unit G5, and the second main wafer transfer device A2 is provided with a first main wafer transfer device A2.
  • the second main carrier 17 can selectively access the second processing unit G2, the fourth processing unit G4, the fifth processing unit G5, and the like. is set up.
  • a heat treatment unit is provided on the back side of the first main wafer transfer device A1, for example, an adhesion unit (AD) 110 for hydrophobizing the wafer W, and a heating unit for heating the wafer W.
  • Unit (HP) 1 13 are multi-tiered as shown in FIG. It should be noted that the adhesion unit (AD) may be configured to further include a mechanism for controlling the temperature of the W.
  • a peripheral exposure device (WEE) 120 for selectively exposing only the edge portion of the wafer W, a film thickness for inspecting a film thickness of a resist applied on the wafer W
  • An inspection apparatus 119 and a line width inspection apparatus 118 for inspecting the line width of the resist pattern are provided in multiple stages.
  • the film thickness inspection device 119 and the line width inspection device 118 may be provided outside the coating image processing apparatus 1 instead of being provided inside the coating image processing apparatus 1 as described above. Further, the heat treatment unit (HP) 113 may be arranged on the back side of the second main wafer transfer unit A2, similarly to the back side of the first main wafer transfer unit A1.
  • an oven-type processing unit that performs a predetermined process by placing the wafer W on a mounting table, for example, a high-temperature heating unit that performs a predetermined heating process on the wafer W Processing unit ( ⁇ ), cooling unit (CP L) that performs cooling processing on W with high-precision temperature control, transition as a transfer part of wafer W from wafer carrier 22 to main carrier 16
  • a delivery / cooling unit TCP which is divided into a transfer unit and a cooling unit in two upper and lower tiers, is stacked in, for example, 10 tiers from the top.
  • the third row from the bottom is provided as a spare space.
  • POST post-baking unit
  • TRS transition unit
  • One unit (PAB) and cooling unit (CPL) are stacked in order from the top, for example, in 10 layers.
  • P EB boss exposure unit
  • CPL cooling unit
  • TRS transition unit
  • the unit of the heat treatment system has a temperature control plate C for controlling the temperature of the wafer W arranged on the front side, for example, as shown in a fourth processing unit G4 in FIG. 1, and heats the wafer W.
  • a heating plate H is provided on the back side for heating.
  • a first processing unit G1 and a second processing unit G2 are provided in the Y direction on the apparatus front side of the processing station 12 (lower side in the figure).
  • the processing supplied by each processing unit G1 and G2 is provided between the first processing unit G1 and the cassette station 10 and between the second processing unit G2 and the interface unit 14.
  • Liquid temperature control pumps 24 and 25 used for controlling the temperature of the liquid are provided, respectively, and further, clean air from an air conditioner (not shown) provided outside the coating and developing apparatus 1 is provided.
  • Ducts 31 and 32 for supplying the inside of the processing units G1 to G5 are provided.
  • the first processing unit section G1 five spinner-type processing units that place a wafer W on a spin chuck and perform predetermined processing in a cup CP, for example, as a resist film forming section 3 layers of resist coating unit (COT) and 2 layers of bottom coating unit (BARC) to form an anti-reflection film to prevent light reflection during exposure It is piled up on the steps.
  • the second processing unit section G2 five spinner type processing units, for example, a development processing unit (DEV) as a development processing section are stacked in five stages.
  • DEV development processing unit
  • the drainage of the resist solution is troublesome both mechanically and for maintenance. It is also possible to arrange in the upper stage as needed.
  • chemical chambers (CHM) 26 and 28 for supplying the above-mentioned predetermined processing liquid to the respective processing units G 1 and G 2 are provided. Each is provided.
  • a portable pick-up cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the ink-jet face portion 14, and a wafer carrier 27 is provided at the center.
  • the wafer carrier 27 moves in the X and Z directions to access both cassettes CR and BR.
  • the wafer carrier 27 is configured to be rotatable in the zero direction, and can also access the fifth processing unit G5.
  • a plurality of high-precision cooling units (CPLs) are provided on the back surface of the in-face unit 14, for example, two upper and lower stages.
  • the wafer carrier 27 is also accessible to this cooling unit (CPL).
  • FIG. 4 and FIG. 5 are a plan view and a cross-sectional view showing a developing unit (DEV) according to one embodiment of the present invention.
  • a fan / filter unit F for supplying clean air into the case 41 is attached above the case 41.
  • an annular cap CP is disposed near the center of a unit bottom plate 51 smaller than the width of the housing 41 in the Y direction, and a spin chuck 42 is disposed inside the annular cap CP.
  • the spin chuck 42 is configured to be rotated by the rotational driving force of the motor 43 in a state where the wafer W is fixedly held by vacuum suction.
  • pins 48 for transferring the wafer W are provided so as to be movable up and down by a driving device 47 such as an air cylinder. This allows The wafer can be transferred to and from the main wafer carrier 1 ⁇ through the opening 41 a while the openable shirt 52 is open.
  • a drain port 45 for waste liquid is provided at the bottom of the cup CP.
  • a drain pipe 33 is connected to the drain port 45, and the drain pipe 33 communicates with a lower drain port (not shown) using the space N between the unit bottom plate 51 and the housing 41. .
  • the developing solution nozzle 53 for supplying the developing solution to the surface of the wafer W is formed, for example, in a long shape having substantially the same diameter as the diameter of the wafer W, and is supplied through the supply pipe 34 to the chemical chamber. (CHM) Connected to a developer tank (not shown) in 28 (Fig. 2).
  • the developer nozzle 53 is detachable from a nozzle holding member 60 of the nozzle scan program 36.
  • the nozzle scan arm 36 is attached to the upper end of a vertical support member 49 movable horizontally on a guide rail 44 laid in one direction (Y direction) on the unit bottom plate 51.
  • the belt drive mechanism moves together with the vertical support member 49 in the Y direction.
  • the developer nozzle 53 stands by at the developer nozzle path 46 disposed outside the power supply CP except when the developer is supplied. To be transported.
  • the developing solution nozzle 53 has, for example, a plurality of discharge holes (not shown) at its lower end, and the developing solution is discharged from the plurality of discharge holes.
  • a rinse nozzle 55 for discharging a rinse liquid is attached to the rinse nozzle arm 54 on the side of the force CP.
  • the rinsing nozzle arm 54 is provided so as to be rotatable in the direction by, for example, driving a stepping motor 56 supported by a support member 57.
  • the rinsing nozzle 55 moves to a position above the center of the wafer W accommodated in the force CP. It's swelling. Further, as shown in FIG.
  • the rinse nozzle 55 and the like are omitted.
  • the driving of the stepping motor 56 which is the moving mechanism of the nozzle scan arm 36 and the moving mechanism of the rinse nozzle arm 54, is electrically controlled by the control unit 40.
  • the rinsing nozzle 55 is connected via a supply pipe 58 to a rinsing liquid supply source 59 including an ink pump (not shown) for storing a rinsing liquid.
  • a rinsing liquid supply source 59 including an ink pump (not shown) for storing a rinsing liquid.
  • a surfactant or the like may be mixed into the pure water in order to lower the surface tension of the pure water from the viewpoint of preventing collapse.
  • a flow path 55 a through which the rinsing liquid flows is provided inside the nozzle, and a main hole 55 b for discharging the rinsing liquid penetrating from the center of the flow path 55 a to the center of the lower end face 55 e of the nozzle is provided.
  • a main hole 55 b for discharging the rinsing liquid penetrating from the center of the flow path 55 a to the center of the lower end face 55 e of the nozzle is provided.
  • eight sub-holes 55c having a smaller diameter than the main hole 55b are formed so as to penetrate from the flow path 55a to the lower end surface 55e.
  • the diameter of the main hole 55 b is, for example, 1.5 mn! ⁇ 2.5 mm, preferably 2.0 mm.
  • the diameter of the sub-hole 55c is, for example, 0.3 to 0.7 mm, and preferably 0.4 mm.
  • the rinsing nozzle 55 By discharging the rinsing liquid onto the wafer W by the rinsing nozzle 55 configured as described above, the liquid discharged from the main hole 55b and the liquid discharged from the sub-hole 55c are mixed, and the wafer is discharged.
  • a disruptive effect can occur on the above. For example, bubbles can be generated by this disturbing action.
  • the flow rate of the liquid discharged from the sub hole 55c is controlled by the flow rate of the liquid discharged from the main hole 55b. Liquid flow rate. As a result, for example, the turbulent liquid flows smoothly from the center of the wafer toward the peripheral edge, and the action of removing impurities can be enhanced.
  • the reason why the diameter of the main hole 55b is set to this value is that if the diameter is smaller than 1.5 mm, the flow velocity of the liquid is high and the impact may cause the resist pattern to collapse. .
  • the reason why the diameter of the sub hole 55c is set as described above is that if the diameter is set to 0.7 mm or more, the flow rate from the sub hole 55c becomes too large, and the liquid discharged from the sub hole 55c becomes The liquid also flows toward the center of the substrate, and the residence time of the liquid on the substrate becomes longer. As a result, the impurities are reattached and the removal action is reduced.
  • the flow rate of the rinsing liquid is 1 liter / minute
  • the flow rate of pure water discharged from the main hole 55b is 500 ml / min to 900 m1 / min.
  • the discharge flow rate of pure water from the sub hole 55c is 10 OmlZmi! It is preferable to set it to! -50 Om1 / min. .
  • the wafer carrier 22 accesses the cassette CR containing the unprocessed wafers W on the cassette mounting table 20, and transfers one wafer W from the cassette CR. Take out.
  • the wafer W is delivered to the first main transfer device A 1 via the delivery / cooling unit (TCP), and is carried into, for example, an adjuvant unit (AD) 110 to be subjected to a hydrophobic treatment.
  • the wafer is transferred to, for example, a bottom coating unit (BARC), where an anti-reflection film is formed to prevent reflection of exposure light from a wafer during exposure.
  • BARC bottom coating unit
  • the wafer W and the wafer W are carried into a resist coating unit (COT), and a resist film is formed.
  • COT resist coating unit
  • the wafer W is transferred to the pre-baking unit (P AB) by the first main transfer device A 1.
  • the wafer W is placed on the temperature control plate C, and the wafer W is moved to the heating plate H side while being temperature-controlled, and is placed on the heating plate H and heated.
  • the wafer W is transferred again to the first main transfer device A1 via the temperature control plate C. Thereafter, the W is cooled at a predetermined temperature in the cooling unit (CPL).
  • the wafer W is taken out by the second main transfer device A2, transferred to the film thickness inspection device 119, and the resist film thickness is sometimes measured. Then, the wafer W is transferred to the exposure apparatus 100 via the transition unit (TRS) in the fifth processing unit G5 and the interface unit 14, and is subjected to exposure processing. When the exposure processing is completed, the wafer W is transferred to the second main transfer device A 2 via the transition unit (TR S) in the interface 14 and the fifth processing unit G 5, and It is transported to a post-exposure bedding unit (PEB), where temperature control and heat treatment are performed. After the completion of the exposure processing, the wafer W may be temporarily stored in the buffer cassette BR in the interface section 14.
  • TRS transition unit
  • PEB post-exposure bedding unit
  • the wafer W is conveyed to the development processing unit (DEV) where the development processing is performed.
  • a predetermined heating process post-baking
  • the wafer W is subjected to a predetermined cooling process in the cooling unit (COL), and is returned to the cassette CR via the extension unit (EXT).
  • the developer nozzle 53 discharges the developer while moving on the stationary wafer W in the direction indicated by arrow A, and The developer is applied to the plate. Then, a developing process is performed for a predetermined time, for example, 60 seconds while the developing solution is applied on the entire surface of the substrate.
  • the rinsing nozzle 55 is arranged at the center position of the wafer W as shown in FIG. 7, and discharges the rinsing liquid.
  • the rinsing liquid is discharged from the main hole 55b and the sub hole 55c, and is disturbed on the wafer W.
  • the rinsing liquid in the disturbed state diffuses on the wafer, and removes the impurities by applying stress to the impurities such as micelles attached to the wafer by electrostatic force or van der Waals force.
  • the developing solution is washed away by discharging the rinsing solution.
  • the rinsing liquid may be discharged while rotating the wafer W at, for example, 500 rpm.
  • the disturbed rinsing liquid flows over the wafer due to the rotational centrifugal force, and the disturbed rinsing liquid increases the kinetic energy and enhances the impurity removing action.
  • the flow rate of the rinsing liquid supplied from the rinsing liquid supply source 59 is 1 liter / minute.
  • the rinsing nozzle 55 of the present embodiment has a configuration in which a plurality of sub-holes 55c are provided around the main hole 55b, the rinsing liquid is discharged from the main hole 55b to the central portion of the wafer W while being discharged.
  • the rinsing liquid can be discharged in a circular shape from the auxiliary hole 55c around the periphery. Thereby, the rinsing liquid in a disturbed state can be uniformly diffused on the wafer W, and the action of removing impurities is improved. This is particularly effective when rotating the wafer as described above.
  • the rinsing process of the present embodiment also has the function of washing away the developer as in the conventional case, and thus does not increase the processing time.
  • the sub-hole 55c of the rinsing nozzle 55 is not necessarily circular, but as shown in FIG. May be provided. Similarly, the main hole 55b may be rectangular.
  • FIG. 12 is an enlarged cross-sectional view of a lower portion of the rinse nozzle according to the second embodiment.
  • an annular groove 55d is formed between the main hole 55b and the sub-hole 55c.
  • FIG. 13 is a plan view showing a developing unit (DEV) according to the third embodiment of the present invention. 13, the same components as those in FIG. 4 are denoted by the same reference numerals, and description thereof will be omitted.
  • the rinsing nozzle 75 in this development processing unit (DEV) has a long shape and is supported by a rinsing nozzle arm 63.
  • the rinse nozzle 63 is provided movably on the guide rail 44 in the Y direction under the control of the control unit 40, similarly to the nozzle scan arm 36. Thus, the rinsing nozzle 75 is moved to the upper position of the wafer W accommodated in the nip CP.
  • FIG. 14 shows the rinse nozzle 75, (a) is a sectional view, and (b) is a plan view.
  • the rinsing nozzle 75 is formed, for example, in a long shape having substantially the same length as the radius of the wafer, and has a buffer chamber 75 a for temporarily storing a rinsing liquid therein, and penetrates from the buffer 75 a to the lower end face.
  • a plurality of holes for discharging the rinse liquid are provided. These holes have one main hole 55b at one end of the nozzle, and the sub-holes 55c other than the main hole 55b have smaller diameters. As a result, the flow rate of the rinsing liquid discharged from the sub hole 55c is made smaller than the flow rate from the main hole 55b.
  • the diameter of the main hole 55 b is, for example, 1.5 mn! ⁇ 2.5 mm, preferably 2.0 mm.
  • the diameter of the sub-hole 55c is, for example, 0.3 to 0.7 mm, and preferably 0.4 mm.
  • the flow rate of the rinsing liquid is 1 liter / min
  • the flow rate of pure water discharged from the main hole 55b is 500 ml / min to 900 ml / min.
  • the discharge flow rate of pure water from the sub-hole 55c is preferably 100 ml / min to 500 ml / min.
  • the rinsing liquid for example, pure water can be used, but a surfactant or the like may be mixed with the pure water to lower the surface of the pure water from the viewpoint of prevention of collapse. .
  • the rinsing nozzle 75 is disposed so that the rinsing liquid is discharged from the main hole 75b to the center of the wafer W as shown in FIG. 15, for example.
  • the rinsing liquid is mixed and disturbed on the wafer to remove impurities.
  • a disturbing action can be generated on the entire wafer surface in a short time, and the action of removing impurities can be improved.
  • the rinsing nozzle 75 has a long shape having the same length as the radius of the wafer W, but this length is shorter than the radius of the wafer, for example, 40 mm shorter than the radius.
  • the wafer rim may be shaped so as not to discharge the rinse liquid. As a result, it is possible to suppress the occurrence of pattern collapse at the periphery of the wafer. This is because the peripheral speed of the peripheral portion of the wafer is higher than that of the central portion, and by preventing the peripheral portion from being discharged, the rinse liquid discharged to the peripheral portion is applied to the wafer surface. This is because the message can be reduced. Further, generation of mist due to the influence of the peripheral speed of the rinsing liquid discharged to the peripheral portion can be suppressed, and contamination of the wafer surface can be prevented.
  • the rinsing nozzle 85 has a long shape substantially the same length as the diameter of the wafer, and a main hole 85b is provided at the center of the nozzle.
  • a plurality of sub-holes 85c may be provided in the outer direction of the nozzle. As a result, the time required for rinsing the entire surface of the wafer can be further reduced.
  • the diameter of each sub-hole of the rinse nozzle may be changed.
  • the flow rate of the rinsing liquid discharged from the sub-hole of the rinsing nozzle is changed stepwise by increasing the diameter of the sub-hole near the center of the wafer and decreasing the diameter toward the periphery of the wafer.
  • two supply pipes 82A and 82B are connected to the rinsing liquid supply source 59, and pumps 76A and 76B for pumping the rinsing liquid by gas are connected to the respective supply pipes.
  • the pumps 76A and 76B are separately controlled to make the discharge pressure different, so that the flow rate of the rinse liquid to be discharged can be changed. As a result, the impact on the wafer surface due to the influence of the peripheral speed of the wafer can be reduced.
  • Such an embodiment can also be applied to the rinse nozzle 85 shown in FIG.
  • FIG. 18 shows a comparison between the conventional rinsing nozzle, the rinsing nozzle 55 according to the first embodiment, and the occurrence rate of precipitation defects when rinsing is actually performed with the rinsing nozzle 75 according to the third embodiment.
  • the incidence Is the ratio of the number of defects when rinsing is performed by each rinsing nozzle according to the present embodiment, when the number of defects generated when rinsing is performed by the conventional rinsing nozzle is 100%.
  • the rinse nozzle according to the present embodiment was used, the number of defects was clearly reduced.
  • two rinse nozzles 55 A and 55 B are connected to a rinse liquid supply source 59 via a supply pipe 58.
  • the supply pipe 58 is connected to a pump 61 for pumping the rinsing liquid by gas.
  • the rinse nozzle 55A is provided with, for example, one rinse liquid discharge hole (not shown), and the rinse nozzle 55B is provided with a small discharge hole provided in the nozzle 55A.
  • one discharge hole (not shown) for discharging the rinsing liquid is provided.
  • the rinsing nozzle 55A is arranged on the center of the wafer W, and the rinsing nozzle 55B is arranged outside the substrate from the center. Even with such a configuration, the rinsing liquid can be discharged from the nozzles 55A and 55B while rotating the wafer W to efficiently generate a disturbing action and remove impurities.
  • independent supply pipes 58 A and 58 B extend from the rinsing liquid supply source 59, and the same supply pipes 58 A and 58 B as those shown in FIG. 19 are provided. Rinse nozzles 55 A and 55 B are connected respectively.
  • Separate pumps 61A and 61B are installed in the supply pipes 58A and 58B, respectively. In the present embodiment, for example, the separate pumps 61A and 61B may be controlled so that both nozzles have the same discharge pressure or different discharge pressures. This makes it possible to more precisely control the disturbance state such as the bubble generation rate. Also, supply pipes 58A and 58B are provided so that the discharge timing of both nozzles can be controlled separately. Independent on-off valves may be provided respectively.
  • the rinse nozzle 55B in FIGS. 19 and 20 may have a plurality of discharge holes. Further, a mechanism may be provided for scanning only the rinse nozzle 55B on the wafer in the radial direction of the wafer.
  • FIG. 21 is a view showing the timing in which the rinsing liquid is discharged from the rinsing nozzles 55 A and 55 B in FIGS. 19 and 20.
  • discharging from the nozzle 55A is performed first, and then discharging from the nozzle 55B.
  • the ejection timing is such that the rinsing liquid discharged from the nozzle 55A is diffused at least to the position on the wafer where the rinsing liquid is discharged from the nozzle 55B. Accordingly, the timing at which the rinsing liquid is discharged from the nozzle 55B depends on the rotation speed of the wafer, the discharge amount, the distance between the two nozzles, and the like.
  • the discharge from the nozzle 55B can be performed after the rinsing liquid from the nozzle 55A is diffused.
  • the impact on the wafer due to the discharge of the rinsing liquid from the nozzle 55B can be reduced, and the collapse of the pattern can be avoided.
  • the more effective the flow velocity of the nozzle 55B in order to enhance the disturbance effect the more effective it becomes.
  • FIG. 22 is a diagram showing a manner of rinsing a substrate using a nozzle according to still another embodiment of the present invention.
  • the rinsing nozzle 174 has a main chamber 174 A to which a main supply pipe 182 A is connected, and a subchamber ⁇ 4 B to which a sub supply pipe 182 B is connected.
  • This main supply pipe 18 2 A is the main supply for supplying main rinse liquid 159 A. Connected to source 1 59.
  • the main rinse liquid 159 A flows from the main supply source 159 through the main supply pipe 182 A and is supplied to the main chamber 1 14 A.
  • the sub supply pipe 182B is connected to a sub supply source 160 that supplies a sub rinse solution 16 OA.
  • the sub-rinse liquid 160A is supplied from the sub-supply source 160 through the sub-supply pipe 182B to the sub-room 174B.
  • Pumps 1-6A and 176B for pumping the rinsing liquid by gas are separately connected to the supply pipes 182A and 182B, respectively, so that the rinsing liquid is supplied separately.
  • the supply amount of the rinsing liquid is controlled by a control unit (not shown).
  • the main rinse solution 159 A for example, an alkaline solution such as a developer diluted to a pH value of 9 to 10 is used, and as the sub-rinse solution 160 A.
  • a lower pH value An alkaline solution such as a diluted developer is used.
  • the pH value of the sub-rinse solution 16 OA is lower than that of the main rinse solution 159A.
  • the pH value of the main rinse solution 159 A is, for example, 9 to 11, and the pH value of the sub rinse solution 160 A is, for example, 7 to 8.
  • the main chamber 144A is provided with a main hole 175A for discharging a main rinse liquid
  • the sub-chamber 174B is provided with a sub-hole 175B for discharging a sub-rinse liquid.
  • the wafer W is rotated by a rotating mechanism (not shown).
  • the pump 176A is operated, and the main rinse liquid 159A is discharged from the main hole 175A toward the wafer W as shown in FIG. 22 (a).
  • the discharged main rinse liquid 159 A is diffused around the wafer W by the centrifugal force of rotation.
  • Spread mainlin The liquid 159 forms a liquid film 159 B on the surface of the substrate W.
  • the developing solution on the wafer W is, for example, an alkaline solution such as TMAH (Tetramethylammonium hydroxide: tetramethylammonium hydroxide).
  • TMAH Tetramethylammonium hydroxide: tetramethylammonium hydroxide
  • the alkaline liquid film 159B spreads while reducing the adhesion of insoluble matter on the substrate surface.
  • the pump 176B is operated to discharge the sapling liquid 160A toward the wafer W from the sub hole 175B.
  • the sub-rinse liquid 160 A is discharged while the main rinse liquid 159 A is discharged.
  • the main rinse liquid 159A and the sub rinse liquid 160A are disturbed on the wafer W.
  • the disturbed rinsing liquid spreads on the wafer W, and removes impurities by applying stress to the impurities such as micelles attached to the wafer W by electrostatic force or van der Waals force.
  • the salts liberated in the liquid film 159B are washed away by the centrifugal force of rotation.
  • the main rinse solution 159A an alkaline solution having a pH value of, for example, 9 to 11, a single shock can be prevented. Further, by making the sub-rinse solution 16 OA a neutral or alkaline solution having a lower pH value than that of the main rinse solution 159 A, heat shock can be prevented.
  • the first hard shock means that, for example, when a liquid having a significantly different pH value from that of the developer on wafer W is used as main rinse 159 A, impurities such as the disturbed developer are re-adhered to the substrate.
  • the phenomenon that does.
  • a liquid having a significantly different pH value from the developer on the wafer W is used as the sub-rinse liquid 160A.
  • Generally used developing solutions are particularly susceptible to the shock.
  • the sub-rinse solution 16 OA is Along with 159 A, the developer must be disturbed and the main rinse 159 A must be washed away. It is desirable that the subrinse liquid 160 A be as neutral as possible. However, if neutral water such as pure water is used, pH shock may be caused.
  • the adhesion of the insoluble matter to the wafer W is suppressed by first discharging the alkaline main rinse solution 159A. Then, by using an alkaline solution having a lower pH value than the main rinse solution 159 A as the suprine solution 160 A, the disturbance is caused while relaxing the first shock, and the first solution is washed away. Can be. As a result, the disturbing effect can be further enhanced, and impurities such as micelles and insolubles attached to the developer and the substrate can be efficiently removed.
  • the mixed liquid 183 A is mixed with the sub-rinse liquid 160 A by the pump 185 provided in the pipe 183.
  • a pH value lower than that of the sub-rinse solution 16 OA for example, pure water or the like can be used.
  • the pH value of the sub-rinsing solution 16 OA can be reduced, and no reaction occurs on the developing solution, and the accuracy is improved. Good rinsing can be performed.
  • a control unit 190 may be provided for controlling the amount of the mixed solution 183 A to be mixed with the sub-rinse solution 16 OA by gradually changing the pressure of the pump 185, for example. .
  • the pH value of the sub-rinse solution 16 OA does not suddenly change, and the pH shock is reduced. There is nothing to wake up.
  • FIG. FIG. 24 shows a state where the wafer W is rinsed from both the front and back surfaces.
  • Nozzle 274 supplies main rinse source 259 A that supplies main rinse liquid 259 A and main chamber 274 A that is connected via main supply pipe 282 A, and sub-rinse liquid 26 OA And a sub-chamber 274B connected via a sub-supply pipe 282B.
  • the main chamber 274 A is provided with a main hole 275 A for discharging a main rinsing liquid
  • the sub chamber 274 B is provided with a sub hole 275 B for discharging a sub rinsing liquid. .
  • Pumps 276A and 276B which pump rinsing liquid by gas, are connected separately to supply pipes 282A and 282B so that rinsing liquid can be supplied separately. I'm sorry In each of the pumps 276A and 276B, the supply of the rinsing liquid is controlled by a control unit (not shown). As the main rinse liquid 255 A and the sub rinse liquid 260 A, for example, pure water is used.
  • the nozzle 174 discharges a rinsing liquid from the front side of the wafer W to clean the developing liquid surface on the wafer W surface. Further, a nozzle 274 discharges a rinsing liquid from the back side of the wafer W to clean the back side of the wafer W.
  • the rinsing liquid is discharged from the nozzle 274, the pure water discharged from the main hole 275A, together with the pure water discharged from the subhole 275B, disturbs the impurities attached to the back surface of the wafer W. I do. Thus, the back surface of the wafer W can be reliably cleaned.
  • the rinse liquid discharged from the main hole 275A and the sub hole 274B is disturbed, and for example, bubbles are generated by the disturbance.
  • the disturbing bubbles remove the impurities by applying stress to the impurities attached to the back surface of the wafer W. It becomes possible.
  • the cleaning means since the cleaning means also has a function of washing away impurities removed from the wafer W as in the past, the processing time does not increase.
  • FIG. 25 (a) shows a spin chuck used in the present embodiment.
  • the spin chuck 242 connected to the motor 243 has a rinsing liquid hole 242 a and a holding portion 244.
  • the holding portion 244 holds the wafer W by fixing the outer periphery of the wafer W by, for example, a mechanism not shown.
  • the rinsing liquid hole 242 a is opened to allow the rinsing liquid discharged from the nozzle 274 to reach the back surface of the substrate.
  • the spin chuck 242 shown in the present embodiment has a slight recess at the center. With such a shape, when the wafer W is placed on the spin chuck 24, a space is formed below the central portion of the wafer W, so that the rinsing liquid discharged from the nozzle 274 causes the wafer W The central part can be reached directly.
  • FIG. 25 (b) schematically shows the positional relationship of the nozzle, spin chuck, cap and the like.
  • a nozzle 274 provided on the back side of the wafer W discharges a rinsing liquid toward the wafer W.
  • the rinsing liquid thus discharged can reach the wafer W through the rinsing liquid hole 242a.
  • the rinsing liquid that has arrived is spread on the wafer W by the rotational centrifugal force.
  • the rinsing liquid from the main hole 275A and the sub hole 275B By discharging the rinsing liquid from the main hole 275A and the sub hole 275B, disturbance occurs on the back surface of the substrate, and impurities attached to the back surface of the substrate can be removed.
  • the rinsing liquid from the main hole 275 A may be discharged toward the center of the rotation axis of the wafer W, as shown by the broken arrow in FIG. 25 (b).
  • the present invention is not limited to the embodiments described above, Deformation is possible.
  • the main hole and the sub hole are provided as the holes for discharging the rinsing liquid, but the diameters of all the holes may be the same without necessarily making the diameters different.
  • the discharge angle of the rinsing liquid with respect to the wafer surface of the main hole and the sub hole may be made different.
  • the angle of the sub-hole 55c of the nozzle 55 shown in FIG. 8 is formed so as to approach the main hole toward the lower end face 55e. Then, the direction in which the rinsing liquid is discharged from the sub-holes is opposite to the direction in which the rinsing liquid discharged from the main holes 55b diffuses from the center of the wafer to the outside on the wafer. Can increase the disturbing effect of
  • the developer and the rinsing solution can be efficiently disturbed to remove impurities such as micelles and insolubles attached to the substrate, thereby reducing the occurrence of defects on the substrate. be able to.

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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

L'invention concerne un dispositif de traitement de substrat, dans lequel un fluide de rinçage est projeté à partir du trou principal (55b) et de trous auxiliaires (55c) d'un injecteur (55) sur un substrat, fluide auquel on incorpore un développeur, en vue de provoquer une action perturbatrice sur le substrat. Du fait qu'une contrainte est conférée à des impuretés par des bulles d'air produite par l'action perturbatrice, les impuretés peuvent être éliminées et, du fait que le processus de rinçage permet d'effectuer un traitement conventionnel d'élimination par lavage au moyen du fluide, la durée du traitement ne peut s'accroître.
PCT/JP2003/005665 2002-06-04 2003-05-06 Dispositif et procede de traitement de substrat, et injecteur y relatif WO2003103030A1 (fr)

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US8617318B2 (en) 2008-06-05 2013-12-31 Tokyo Electron Limited Liquid processing apparatus and liquid processing method
CN108828908A (zh) * 2018-06-27 2018-11-16 山东傲天环保科技有限公司 一种显影液处理装置

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JP4870342B2 (ja) * 2004-08-25 2012-02-08 芝浦メカトロニクス株式会社 二流体噴射ノズル装置
JP2007220956A (ja) * 2006-02-17 2007-08-30 Toshiba Corp 基板処理方法及び基板処理装置
JP4900116B2 (ja) * 2007-07-30 2012-03-21 東京エレクトロン株式会社 現像方法、現像装置及び記憶媒体
JP4900117B2 (ja) * 2007-07-30 2012-03-21 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5104994B2 (ja) * 2011-12-21 2012-12-19 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5212538B2 (ja) * 2011-12-21 2013-06-19 東京エレクトロン株式会社 現像方法、現像装置及び記憶媒体
JP6223839B2 (ja) * 2013-03-15 2017-11-01 東京エレクトロン株式会社 基板液処理方法、基板液処理装置および記憶媒体
JP6203098B2 (ja) 2013-03-29 2017-09-27 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6341035B2 (ja) * 2014-09-25 2018-06-13 東京エレクトロン株式会社 基板液処理方法、基板液処理装置、及び記憶媒体
KR101880232B1 (ko) * 2015-07-13 2018-07-19 주식회사 제우스 기판 액처리 장치 및 방법
TWI700730B (zh) * 2017-01-05 2020-08-01 大陸商盛美半導體設備（上海）股份有限公司 晶圓清洗裝置和方法

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CN108828908A (zh) * 2018-06-27 2018-11-16 山东傲天环保科技有限公司 一种显影液处理装置
CN108828908B (zh) * 2018-06-27 2021-11-19 上海德迈世欧化工有限公司 一种显影液处理装置

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