200307985 (1) 玖、發明說明 【發明所屬之技術領域】 本發明是關於在於半導體裝置的製造之微影製程，用 以將例如半導體基板上的光阻劑圖案顯像的基板處理裝置 、基板處理方法、及使用在這些上的淸洗處理用噴嘴。 【先前技術】 在半導體處理製造的微影製程，在半導體晶圓（以下 稱爲晶圓）的表面，塗佈光阻劑，在光阻劑上曝光光罩圖 案，將之顯像後，在晶圓表面形成光阻劑圖案。 在於如此的微影製程，在例如槳式顯像處理，利用在 晶圓上供給顯像液，在該狀態下將晶圓放置預定時間，來 進行顯像。然後，例如將淸洗液供給到晶圓上將顯像液沖 洗。 但，在顯像處理進行中，會有受到鹽析反應而形成微 晶胞（微等級的流動分子之集合狀態）的情況，而產生： 此微晶胞受到靜電或范德瓦耳斯（van der Waals’）力而 附著於晶片的狀態下殘留，造成缺陷的問題點。又，也有 受到供給淸洗液所產生的pH衝擊，再將淸洗液供給至顯 像液來將顯像液沖洗後使得不溶解物析出的情況，此不溶 解物也同樣地容易附著於晶圓。又，由光阻劑的聚合物表 面切削不溶解物，此不溶解物也大多會再附著。如此，微 晶胞或不溶解物是由於如上所述，受到靜電等的強大力量 所附著於晶圓，故，會有無法利用現狀的淸洗處理來除去 -5- (2) 200307985 【發明內容】 [發明的揭示] 本發明是有鑒於上述的問題點而開發完成的發明，其 目的在於：提供能夠除去附著於基板的微晶胞或不溶解物 等的雜質之基板處理裝置、基板處理方法、以及使用於這 些中之淸洗處理用的噴嘴。 爲了達到上述目的，本發明的基板處理裝置是具備： 用來保持基板的保持部；將處理液供給至保持於保持部的 基板之手段；對供給有處理液的基板，吐出第1液體與第 2液體，攪亂前述處理液來除去附著在基板的雜質，並且 沖洗前述處理液的淸洗手段。 在本發明，藉由對供給有處理液的基板，利用淸洗手 段來吐出第1液體與第2液體，使得這些的處理液、第1 液體、第2液體被攪亂，受到此攪亂而發生例如氣泡。能 以此攪亂或氣泡對雜質賦予應力，來除去該雜質（以下， 將之稱爲攪亂效果）。 並且，由於此淸洗手段也兼作以往以來之沖洗處理液 的作用，故，不會增加處理時間。在此，處理液是例如顯 像液。又，例如，分別能夠使用純水來作爲第1液體與第 2液體。 本發明的一形態，前述保持部是更具備用來使基板旋 轉的手段，一邊使基板旋轉，一邊吐出前述第1液體與第 (3) 200307985 2液體。例如，若作成在基板的中央部吐出第1液體與第 2液體的話，則第1液體與第2液體的混合液體受到旋轉 的離心力而流動於基板上。藉此，可增加在基板表面的被 攪亂之液體的運動能量，提高雜質的除去作用。 本發明的一形態，前述淸洗手段是具備噴嘴，此噴嘴 是具有··形成有吐出前述第i液體用的第1孔之第1吐出 部、形成有吐出前述第2液體用的第2孔之第2吐出部。 利用設置如此的第1孔與第2孔，能夠分開產生攪亂作用 的第1液體與第2液體而加以吐出。然後，若例如對噴嘴 供給的液體之供給系統（在此，所謂供給系統是指例如用 來壓送抑的泵浦或配管等）相同的話，則利用將第1孔的 大小與第2孔的大小作成不同，使得能夠將由孔徑小的孔 所吐出的液體的流量作成較由孔徑大的孔所吐出的液體的 流量少。藉此，例如在由第1恐將第1液體吐出於基板中 央部的情況時，使得已被攪亂的液體由基板中央部朝基板 周緣部圓滑地流動，而提昇了雜質的除去作用。再者，在 例如將第1液體的供給系統與第2液體的供給系統分別設 置的情況時，可利用進行供給系統的泵浦等之壓力調整， 來變更流速。 本發明的一形態，前述第2孔是複數個設在前述第1 孔的周圍爲佳。例如，將噴嘴配置於基板的中央部，由第 1孔將第1液體吐出至基板的中央部，由設在第1孔的周 圍之複數個第2孔將第2液體成圓形狀地供給至在基板上 呈擴散狀的第1液體上。藉此，可將已被攪亂的液體在基 (4) 200307985 板上均等地擴散，提昇雜質的除去作用。特別是在如上所 述之使基板旋轉的情況時非常有效。 且，若例如對噴嘴供給的液體之供給系統爲相同的話 ，則利用將第2孔的孔徑做成較第1孔的孔徑小，能夠將 第2液體的流量作成較第1液體的流量小，而可以提高例 如氣泡的發生效率等的攪亂效果。具體而言，前述第1孔 的孔徑爲1 · 5 mm〜2 · 5 mm，而前述第2孔的孔徑爲0 · 3 mm 〜0.7 nun。將第1孔的孔徑作成如此尺寸是由於在以預定 的吐出壓力將液體吐出的情況時，當將該孔徑做成較1.5 nrni小則液體的流速會變得過高，根據該衝擊而發生光阻劑 圖案倒塌之虞之故。又，將第2孔的孔徑作成如此尺寸是 由於在以預定的吐出壓力將液體吐出的情況時，當該孔徑 作成0.7 mm以上則流量變得過多，吐出到基板上的第2液 體也朝基板中央部流動，受到液體的滯留，使得雜質再附 著等，降低除去作用之故。又，針對具體的第1液體與第 2液體的流量，前述第1液體的吐出流量是500ml/min〜 900ml/min，而前述第 2液體的吐出流量是 100ml/min〜 5 00ml/min爲佳。利用作成如此的流量，可以使得已被攪 亂的液體由基板中央部朝周緣部圓滑地流動，而除去雜質 本發明的一形態，前述噴嘴是具備有設在前述第1吐 出部與第2吐出部之間的溝槽部。比起例如第1吐出部與 第2吐出部的吐出面爲相同的情況，能夠利用設置如此的 溝槽部，來在吐出液體之際，提昇第1液體與第2液體的 -8- (5) 200307985 干擾之防止效果，可確實地在基板上產生攪亂效果。 本發明的一形態，前述第1液體的吐出方向與第2液 體的吐出方向不同。例如在將第2液體的吐出方向做成對 基板面朝向基板內側的傾斜方向的情況時，因朝與第1液 體由基板中央部朝基板外側擴散的方向之反方向吐出第2 液體，所以，可提高例如氣泡的發生率等之攪亂效果。 本發明的一形態，前述淸洗手段是具備有：形成有吐 出前述第1液體用的第1孔之第1噴嘴、與形成有吐出前 述第2液體用的第2孔之第2噴嘴。藉此，能夠準備2個 噴嘴，由各自的噴嘴吐出第1液體與第2液體，來發生例 如氣泡等的攪亂效果。在此情況時，可利用將前述第2孔 的孔徑作成較前述第1孔小，來如前所述地將前述第2液 體的流量做成較前述第1液體的流量少。其結果，即可產 生攪亂效果，又可使已被攪亂的液體由基板中央部朝周緣 部圓滑地流動，而除去雜質。 本發明的一形態，前述第1液體是鹼性溶液，而前述 第2液體是較前述第1液體的pH値低的中性或鹼性溶液 。第1液體與第2液體是儘可能地接近中性的液體爲佳， 但，當分別使用中性之例如純水等時，則會產生pH衝擊 。在此，所謂的pH衝擊是指在將pH大不相同的兩種類 的液體混合時產生雜質，而在基板產生雜質，而再附著於 基板的現象。此現象是在例如使用pH値與處理液大不相 同的液體作爲第1液體的情況、或使用pH値與第1液體 大不相同的液體作爲第2液體的情況時產生。 -9 - (6) 200307985 處理液是由於多數顯示例如pH値爲10〜12程度的 顯像液等之鹼性，故，可利用將第1液體的pH値做成例 如9〜1 1的鹼性溶液，來在吐出第1液體時，減低不溶解 物附著於基板表面。又，第2液體是可使第1液體一同地 攪亂處理液，且進一步第將處理液上的第1液體沖洗。 因此，若根據本發明的結構的話，首先，利用第1液 體來進行淸洗使得不溶解物不會附著於基板上。又，藉由 使用較第1液體的pH値低之例如pH値爲7〜8的中性或 鹼性容易作爲第2液體，即可緩和pH衝擊，又可引起攪 亂，並且能沖洗第1液體。藉此，能夠更進一步提高攪亂 效果，能有效率地除去附著在處理液、基板之微晶胞與不 溶解物等的雜質。 本發明的一形態，更具備有：在前述第2液體，混合 較該第2液體的pH値低的第3液體的手段；及用來控制 利用前述混合手段混合於第2液體的第3液體的量之控制 部。在進行淸洗後，經常有淸洗液堆積於處理液上的情事 產生。特別是在於本發明，作爲淸洗液來使用的第1液體 與第2液體均爲鹼性。當此第1液體與第2液體堆積於基 板上時，則會有引起不需要的反應之可能性。若根據本發 明的結構的話，則利用混合pH値低於第2液體的例如中 性之第3液體，可減少第2液體的pH値，也不會在基板 上引起不必要的反應。又，利用設置控制部，控制混合於 第2液體的第3液體的量，不會使第2液體的pH値產生 急劇的變化，且也不會引起pH衝擊。 -10- (7) (7)200307985 本發明的一形態，具備第1控制部，來控制成：由前 述淸洗手段將前述第1液體吐出至前述基板後，在吐出該 第1液體的狀態下使前述第2液體吐出。若如此加以控制 的話，則在處理液上，可於第1液體與第2液體之間確實 地產生攪亂，而能確實地除去處理液或雜質等。 本發明的一形態，更具備有洗淨手段，該手段是使第 4液體與第5液體吐出至前述基板的裏面而加以攪亂，來 除去附著於該基板的裏面之雜質。攪亂效果是亦適用於附 著於基板的裏面的雜質之時。受到利用洗淨手段吐出第4 液體與第5液體，而使得第4液體與第5液體被攪亂，藉 由攪亂產生例如氣泡。利用此攪亂或氣泡對附著於基板的 裏面之雜質賦予應力，可除去該雜質。並且，此洗淨手段 是由於也兼作以往以來之沖洗由基板除去的雜質的作用， 故，不會增加處理時間。在此，例如第4液體與第5液體 是分別可使用純水。 本發明的一形態，前述保持部是用來由前述基板的下 方保持該基板的裏面者，具有貫通該保持部的貫通孔。前 述洗淨手段是具備：配置在前述保持部的下方，朝前述基 板的裏面，將前述第4液體與前述第5液體吐出，使其可 通過前述貫通孔而直接到達前述基板的裏面之噴嘴。 基板的裏面是受到保持部由下方所保持。在由下方洗 淨如此的基板的裏面之情況時，不易洗淨受到保持部所保 持的部分。但若根據本發明的如此結構的話，則由於由噴 嘴所吐出的第4液體與第5液體是可通過保持部的貫通孔 -11 . (8) (8)200307985 ，故，即使是基板的裏面所受到保持的部分，也可直接到 達。藉此，在基板的裏面，第4液體與第5液體被攪亂， 而可確實地除去附著於基板的裏面之雜質。 本發明之另一觀點的基板處理裝置是具備：用來保持 基板的保持部；及具有長條形狀，在其長方向排列設置有 第1孔與複數個第2孔，用來對供給有處理液的基板，由 前述第1孔與第2孔分別吐出第1液體與第2液體，攪亂 前述處理液，來除去附著於基板上的雜質，並且沖洗前述 處理液之噴嘴。在本發明，因於具有長條形狀的噴嘴之長 方向排列設置有第1孔與複數個第2孔，所以，能夠對吐 出於基板的中央部之第1液體，由在其外側由複數個孔吐 出第2液體。其結果，在例如一邊使基板旋轉一邊吐出的 情況時，能夠以短時間對基板全面賦予例如發生氣泡等的 攪亂作用，而可提高雜質的除去效率。在此情況時，例如 由前述第1孔將第1液體吐出至基板的中央部，而由前述 第2孔較基板中央部之更外側的基板外側吐出第2液體即 可〇 本發明的基板處理方法是具備：（a)將處理液供給 至基板的製程；（b)對供給有前述處理液的基板，吐出 第1液體與第2液體，攪亂前述處理液，來除去附著於基 板的雜質，並且沖洗前述處理液的製程。在本發明，若對 供給有處理液的基板，吐出第1液體與第2液體的話，則 可發生例如產生氣泡等的攪亂作用，能藉由此攪亂作用將 應力賦予雜質，除去該雜質。並且，由於兼作以往以來的 -12· (9) 200307985 沖洗處理液的作用，故，不會增加處理時間。 本發明的一形態’將前述第1液體較前述第2液體先 吐出。如此，能利用在基板上供給第1液體，使第1液體 在基板上某種程度擴散後吐出第2液體，來減輕由於吐出 第2液體對基板之衝擊，可迴避圖案的倒塌。且，利用將 第1液體的pH値作成例如9〜1 1、而第2液體的pH値作 成例如7〜8，也可減輕pH衝擊。在此情況時，特別是在 爲了提高產生氣泡等的攪亂效果，而將第2液體的流速作 成較第1液體的流速快的情況下非常有效。 本發明的一形態，前述製程（b )是具備：（c )吐出 鹼性溶液作爲前述第1液體的製程；（d )由前述製程（c )的途中，吐出pH値低於前述第1液體的鹼性溶液作爲 前述第2液體之製程。由於處理液多數是顯示例如PH値 爲1 〇〜1 2程度之顯像液等的鹼性，故，可利用將第1液 體作成pH爲例如10〜12程度的鹼性溶液，來當吐出第1 液體時，減輕不溶解物附著在基板表面。又，第2液體是 須要與第1液體一同攪亂處理液，並且也須要沖洗處理液 上的第1液體。第1液體與第2液體是儘可能地接近中性 的液體爲佳，但，當分別使用中性之例如純水等時，則會 產生pH衝擊。在此，所謂的pH衝擊是指在使用例如與 處理液之pH値大不相同的液體作爲第1液體、使用例如 pH値與第1液體大不相同的液體作爲第2液體的情況時 ，已被攪亂的雜質再附著於基板的現象。但，若利用本發 明的結構的話，則首先能夠利用第1液體引起酸鹼反應。 -13- (10) (10)200307985 又，可藉由使用pH値較第1液體低的例如pH値爲7〜8 的中性或鹼性溶液作爲第2液體，來一邊緩和pH衝擊一 邊引起攪亂，並且沖洗第1液體。藉此，能進一步提高攪 亂效果，可有效率地除去附著在處理液、基板之微晶胞及 不溶解物等的雜質。 本發明的一形態，更具備：（e )在前述第2液體， 混合pH値低於該第2液體的第3液體之製程。若根據本 發明的此結構的話，可利用混合pH値低於第2液體的第 3液體，來減少第2液體的pH値。特別是利用設置控制 部，控制混合於第2液體的第3液體之量，也不會使第2 液體的pH値產生急劇的變化，也不會造成pH衝擊。藉 此，可有效率地除去附著於處理液、基板上的微晶胞及不 溶解物等的雜質。 本發明的一形態，更具備有：（f )對供給有前述處 理液的基板，由該基板的裏面吐出前述第4液體與第5液 體且加以攪亂，來除去附著於該基板的裏面之雜質。若根 據本發明之此結構的話，則即使在基板裏面也可發揮攪亂 效果，能確實地除去附著於基板的裏面的雜質。 本發明的噴嘴是用來對供給有處理液的基板，吐出第 1液體與第2液體後攪亂前述處理液，來除去附著於基板 上的雜質，並且沖洗前述處理液的噴嘴，具備有：形成有 吐出前述第1液體用的孔之第1吐出部；及形成有吐出前 述第2液體用的孔之第2吐出部。若利用如此的噴嘴，對 供給有處理液的基板吐出第1液體與第2液體的話，則能 (11) 200307985 產生例如氣泡等的攪亂作用，能夠藉由此攪亂作用對雜質 賦予應力，來除去該雜質。並且也兼作以往以來的沖洗處 理液的作用，故，不會增加處理時間。 又，本發明之另一觀點的噴嘴是具有長條形狀，在其 長方向排列設置有第1孔與複數個第2孔，用來對供給有 處理液的基板，由前述第1孔與第2孔分別吐出第1液體 與第2液體，攪亂前述處理液，來除去附著於基板上的雜 質，並且沖洗前述處理液之噴嘴，具備有：形成有吐出前 述第1液體用的孔之第1吐出部；及於前述長條方向上排 列設置有複數個吐出前述第2液體用的孔之第2吐出部。 在例如一邊使基板旋轉一邊吐出的情況時，能夠以短時間 對基板全面賦予例如發生氣泡等的攪亂作用，而可提高雜 質的除去效率。在此情況時，例如由前述第1孔將第1液 體吐出至基板的中央部，而由前述第2孔較基板中央部之 更外側的基板外側吐出第2液體即可。 【實施方式】 以下，根據圖面，說明本發明的實施形態。 第1〜3圖是顯示本發明之一實施形態的塗佈顯像處 理裝置的全體結構的圖，其中第1圖是平面圖、第2及3 圖是正面圖及背面圖。 此塗佈顯像處理裝置1是具有分別將下述的構件一體 地連接而成之結構：利用晶圓匣CR以複數片例如25片 爲單位，將半導體晶圓W由外部搬入塗佈顯像處理裝置1 •15· (12) 200307985 或由塗佈顯像處理裝置1搬出，用來對晶圓匣CR將晶圓 搬入·搬出的卡匣台（cassette station) 10;在塗佈顯像 製程中，將在一片片的晶圓W上實施預定的處理之單片 式各種處理單元多段配置於預定位置而構成之處理台12 ;在與此處理台12鄰接設置的曝光裝置100之間用來傳 遞晶圓W的介面部14。 在卡匣台10，如第1圖所示，在卡匣載置台20上的 突起20a的位置，於X方向一列地載置著複數個例如5個 晶圓匣CR，其各自的晶圓出入口朝向處理台1 2側，而可 移動於卡匣排列方向（X方向）及收納在晶圓匣CR內的 晶圓的晶圓排列方向（Z方向）之晶圓搬送體22可選擇 性地出入各晶圓匣CR。且，此晶圓搬送體22是構成可旋 轉於0方向，如第3圖所示，亦可出入於屬於做成後述的 多段結構之第3處理單元部G3的熱處理系統單元。 如第1圖所示，處理台12是在於裝置背面側（圖中 上方），由卡匣台10側起，分別配置第3處理單元部G3 、第4處理單元部G4及第5處理單元部G5，在第3處理 單元部G3與第4處理單元部G4之間設有第1主晶圓搬 送裝置A1。此第1主晶圓搬送裝置A1是將第1主晶圓搬 送體16設置成可選擇性地出入於第1處理單元部G1、第 3處理單元部G3及第4處理單元部G4。又，在第4處理 單元部G4與第5處理單元部G5之間設有第2主晶圓搬 送裝置A2，此第2主晶圓搬送裝置A2是與第1主晶圓搬 送裝置A1同樣地，將第2主晶圓搬送體17設置成可選 -16- (13) 200307985 擇性地出入於第2處理單元部G2、第4處理單元部G4及 第5處理單元部G5。 又，在第1主晶圓搬送裝置A1的背面側設有熱處理 單元，例如如第3圖所示，多段地重疊：將晶圓W加以 疏水化處理之附著單元（AD ) 1 1 0、及加熱晶圓W用的加 熱單元（HP) 113。再者，附著單元（AD) 110是亦可作 爲更具有溫度調節晶圓W的機構之結構。在第2主晶圓 搬送裝置A2的背面側，多段地設有：僅將晶圓W的邊緣 部加以曝光之周邊曝光裝置（WEE ) 120、檢查塗佈於晶 圓W的光阻劑膜厚用的膜厚檢查裝置119及檢查光阻劑 圖案的線寬之線寬檢查裝置118。這些膜厚檢查裝置119 及線寬檢查裝置118是亦可不須設在塗佈顯像處理裝置1 ，而設在裝置外。又，第2主晶圓搬送裝置A2的背面側 是與第1主晶圓搬送裝置A 1的背面側同樣地也會有配置 構成加熱單元（HP ) 1 1 3的情況。 如第3圖所示，在第3處理單元部G3，將晶圓W載 置於載置台後進行預定的處理之開放型處理單元：例如將 在晶圓W上實施預定的加熱處理之高溫加熱處理單元（ BAKE )、在晶圓W以精度良好的溫度管理化來實施冷卻 處理的冷卻處理單元（CPL )、成爲將晶圓W由晶圓搬送 體22傳遞到第1主晶圓搬送體16之傳遞部的遞移單元（ TRS )、在上下2段分別分成傳遞部與冷卻部而加以配設 的傳遞·冷卻處理單元（TCP )由上算起的順序重疊成例 如10段。再者，在於第3處理單元部G3,在本實施形態 (14) 200307985 ’第3段是作爲備件（spare )的空間而加以設置。在第4 處理單元部G4，也由上算起的順序，將例如後焙（ postbaking )單元（POST)、成爲晶圓傳遞部之遞移單元 (TRS)、在形成光阻劑膜後的晶圓W上實施加熱處理的 滑輪烘焙單元（PAB )、冷卻處理單元（cpl )重疊成例 如10段。且，在第5處理單元部G5，也例如由上算起的 順序，將在曝光後的晶圓W實施加熱處理的後曝光烘焙 單元（PEB )、冷卻處理單元（CPL )、成爲晶圓W的傳 遞部之遞移單元（TRS )重疊成例如10段。 ‘ 加熱處理系統是例如在第1圖的第4處理單元部G4 所示，將用來溫度調節晶圓W的溫度調節板C配置在正 面側，而將用來加熱晶圓W的加熱板Η配置於背面側。 在於第1圖，在處理台12的裝置正面側（圖中下方 )，將第1處理單元部G1與第2處理單元部G2倂設於 Υ方向。在此第1處理單元部G1與卡匣台10之間及第2 處理單元部G2與介面部14之間，分別設有使用在以各 處理單元部G1及G2所供應的處理液之溫度調節的液溫 調節泵浦24、25。且，將來自於設在該塗佈顯像處理裝 置1外的未圖示之空調器的淸淨空氣供給至各處理單元部 G1〜G5內部的配管31、32。 如第2圖所示，在第1處理單元部G1，重疊有將在 杯狀體CP內將晶圓W載置於旋轉夾進行預定的處理之5 台的旋轉型處理單元：例如，將作爲光阻劑膜形成部的光 阻劑塗佈處理單元（COT ) 3段、及爲了防止曝光時的光 (15) 200307985 反射而形成防止反射膜之底部塗佈單元（BARC ) 2段， 由下方算起的順序，重疊成5段。又，在第2處理單元部 G2，也同樣地重疊5台的旋轉型處理單元：例如將作爲 顯像處理部的顯像處理單元（DEV )重疊成5段。由於， 光阻劑塗佈處理單元（COT )，光阻劑液的排液在結構上 、在維修上均麻煩，故如前所述，配置在下段爲佳。但， 亦可因應需要，配置在上段。 又，在第1及第2處理單元部G1及G2的最下段， 分別設有將上述的預定處理液供給至各處理單元部G1及 G2 之化學室（CHM) 26、28。 在介面部14的正面部，2段配置有可搬送性的拾取 卡匣CR、與定置型的緩衝卡匣BR，在中央部設有晶圓搬 送體27。此晶圓搬送體27是移動於X、Z方向，出入於 兩卡匣CR、BR。又，晶圓搬送體27是構成可旋轉於0 方向，亦可出入於第5處理單元部G5。且，如第3圖所 示，在介面部14的背面部，設有複數個高精度冷卻處理 單元（CPL )，例如做成上下2段。晶圓搬送體27亦可 出入於此冷卻處理單元（CPL)。 其次，詳細說明關於本發明之顯像處理單元（DEV ) 。第4及5圖是顯不本發明的一實施形態之顯像處理單元 (DEV )的平面圖及斷面圖。 在此單元，在框體41的上方，安裝有用來將淸淨空 氣供給至框體41內的風扇過清、單兀F。然後，在下方， 於較框體41的Y方向的寬度小之單元底板51的中央附 •19· (16) 200307985 近配設有環狀的杯狀體CP，在其內側配置有旋轉夾42。 此旋轉夾42是構成：在利用真空吸著將晶圓W固定保持 的狀態下，利用馬達43的旋轉驅動力來旋轉。 在杯狀體CP中，傳遞晶圓W之際的銷48利用汽缸 等的驅動裝置47可升降地加以設置。藉此，在設置成可 開關的開關器52打開中，介由開口部41a，可在與第2 主晶圓搬送體1 7之間進行晶圓W的傳遞。又，在杯狀體 CP的底部，設有廢棄液用的排放口 45。在此排放口 45 連接著廢棄液管33,此廢棄液管33是利用單元底板51 與框體41之間的空間N來連通於下方之未圖示的廢棄液 □。 用來將顯像液供給至晶圓W的顯像液噴嘴53是形成 例如與晶圓 W的直徑大致相同的長度之長條狀，介由供 給管34，連接於化學室（CHM)28(第2圖）的顯像液 槽（未圖示）。顯像液噴嘴53是作成可自由裝卸於噴嘴 掃描臂36的噴嘴保持部60。噴嘴掃描臂36是安裝於垂 直支承部49的上端部，利用例如皮帶驅動機構來與垂直 支承部49 一同地移動於Y方向，其中垂直支承部49是 在單元底板51上敷設於一方向（Y方向）之導軌44上可 水平移動者。藉此，顯像液噴嘴53是除了供給顯像液以 外，其餘均在配設於杯狀體CP的外側的顯像液噴嘴槽46 待機，當供給顯像液時，移送至晶圓W上。再者，顯像 液噴嘴53是在其下端部形成有複數個吐出孔（未圖示） ，由這些複數個吐出孔吐出顯像液。 -20- (17) 200307985 且，在杯狀體CP的側方，吐出淸洗液用的淸洗噴嘴 55安裝於淸洗噴嘴臂54。淸洗噴嘴臂54是如第6圖所示 ，設置成：利用例如支承於支承構件5 7的步進馬達5 6的 驅動，可轉動於0方向。藉此，如第5圖的虛線所示，當 進行淸洗處理時，淸洗噴嘴55移動至收容在杯狀體CP 內的晶圓W的中心部上。又，淸洗噴嘴55是如第7圖所 示，配置在：當進行淸洗處理時，保持於旋轉夾42的晶 圓W表面算起例如高度t= 15 nun的位置處。再者，在第5 圖中，省略了淸洗噴嘴55。 以上的噴嘴掃描臂36的移動機構與淸洗噴嘴臂54的 移動機構之步進馬達56的驅動是利用控制部40來進行電 氣性控制。 第8及9圖是第1實施形態之淸洗噴嘴55的斷面圖 及平面圖。此淸洗噴嘴55是介由供給管58連接於包含有 儲存淸洗液用的未圖示之儲存槽與壓送泵浦等的淸洗液供 給源59。此淸洗液是使用例如純水，但，由防止圖案倒 塌的觀點來看，會有：爲了降低純水的表面張力，而在純 水混入介面活性劑等的情況。在噴嘴內部，設有供淸洗液 流動的流通路55a，且貫通由此流通路55a的中心至噴嘴 的下端面55e爲止之吐出淸洗液用的主孔5 5b。又，在主 孔55b的周圍，形成有貫通由流通路55a至下端面55e爲 止之孔徑較此主孔55b小的例如8個副孔55c。此主孔 5 5b的直徑例如爲1.5 mm〜2.5腿，理想是2.0腿。又，副 孔55c的直徑例如爲〇·3 mm〜0.7腿，理想爲〇·4 mm。又 -21 · (18) 200307985 在於第9圖，以8個副孔5 5 c來構成之以虛線所示的圓之 直徑爲例如8腿。 以利用如此結構的淸洗噴嘴55將淸洗液吐出於晶圓 W上，能夠使得由主孔5 5 b所吐出的液體與由副孔5 5 c所 吐出的液體混合，而在晶圓W上發生攪亂作用。利用此 攪亂作用可產生例如氣泡。特別是在本實施形態’因將主 孔55b的大小與副孔55c的大小作成不同，所以，能夠將 由副孔55c所吐出的液體之流量作成較由主孔55b所吐出 的液體的流量少。其結果，使得例如已被攪亂的液體由晶 圓的中央部朝周緣部圓滑地流動，而可提高雜質的除去作 又，將主孔55b的孔徑作成如此尺寸是由於當將其直 徑做成小於1.5 mm時，則會有使得液體的流速變高，受到 該衝擊而產生光阻劑圖案的倒塌之虞之故。又，將副孔 55c的孔徑做成如此尺寸是由於當將其直徑做成大於0.7 mm以上時則使得來自副孔55c的流量變得過多，由副孔 55c所吐出的液體也朝基板中心方向流動，使得液體在基 板上的滯留時間變長，其結果，造成雜質再附著而使得除 去作用降低之故。具體而言，例如淸洗液的流量爲1公升 /分時，針對流量，來自於主孔55b之純水的吐出流量是 500ml/min〜900ml/min，而來自於副孔55c的純水的吐出 流量是 l〇〇ml/min 〜500ml/min 爲佳。 其次，說明關於如上所述的結構的塗佈顯像處理裝置 1之處理製程的一例。 -22- (19) 200307985 首先，在卡匣台10，晶圓搬送體22進入收容著卡匣 載置台20上的處理前之晶圓W的卡匣CR，由該卡匣CR 取出1片的晶圓W。晶圓W是介由傳遞·冷卻處理單元 (TCP )傳遞至第1主晶圓搬送裝置A1，例如搬入至附 著單元（AD) 110進行疏水化處理。其次，將之搬送至例 如底部塗佈單元（BARC )，在此，再於曝光時，會有爲 了防止來自於晶圓的曝光光的反射而形成防止反射膜的情 況。 其次，晶圓 W是被搬入至光阻劑塗佈處理單元（ COT )，形成光阻劑膜。當形成了光阻劑膜時，利用第1 主晶圓搬送裝置A1將晶圓W搬送至滑輪烘焙單元（PAB )。在此，首先，將晶圓W載置於溫度調節板C，晶圓 W —邊被溫度調節，一邊朝加熱板Η側移動，而載置於 加熱板Η上進行加熱處理。在進行加熱處理後，將晶圓 W再次介由溫度調節板C傳遞至第1主晶圓搬送裝置Α1 。然後，在冷卻處理單元（CPL)以預定的溫度將晶圓W 進行冷卻處理。 其次，會有利用第2主晶圓搬送裝置Α2將晶圓W取 出，將其搬送到膜厚檢查裝置Π 9，進行光阻劑膜厚的測 定的情況。然後，晶圓W是介由第5處理單元部G5之遞 移單元（TRS )及介面部14傳遞至曝光裝置100，在此進 行曝光處理。當曝光處理結束時，晶圓W介由介面部14 及第5處理單元部G5之遞移單元（TRS)傳遞至第2主 晶圓搬送裝置Α2後，搬送到後曝光烘焙單元（ΡΕΒ )進 (20) 200307985 行溫度調節及加熱處理。當曝光處理結束後，也會有晶圓 w在於介面部14 一旦被收容於緩衝卡匣BR的情況。 然後，晶圓 W被搬送到顯像處理單元（DEV )進行 顯像處理。在此顯像處理後，也會有進行預定的加熱處理 (post baking )。當顯像處理結束後，晶圓W在冷卻單 元（C0L )進行預定的冷卻處理，介由延伸單元（EXT ) 返回到卡匣CR。 其次，說明關於顯像處理單元（DEV )的動作。 如第10圖（a) 、（b)所示，顯像液噴嘴53 —邊在 靜止的晶圓W上朝箭號A所示的方向移動，一邊吐出顯 像液，使得顯像液充滿於晶圓W上。然後，在顯像液充 滿於晶圓全面的狀態下，進行預定的時間例如60秒的顯 像處理。 然後，淸洗噴嘴55如第7圖所示，配置於晶圓W的 中心位置，吐出淸洗液。這時，由主孔55b與副孔55c吐 出淸洗液，在晶圓W上攪亂。在已被攪亂的狀態下之淸 洗液擴散於晶圓上’以對用靜電或范德瓦耳斯力所附著的 微晶胞等的雜質賦予應力’來除去該雜質。又，在同時， 利用吐出淸洗液來沖洗顯像液。這時’亦可作成1將晶圓 W —邊以例如500rpm來旋轉’一邊吐出淸洗液。藉此’ 能夠使得已被攪亂的狀態之 '凊洗液受到旋轉的離心力而流 動於晶圓上’已被攪亂的狀態之 '凊 '冼液增加運動能量’而 提高了雜質的除去作用。再者’在本實施形態，將由淸洗 液供給源59所供給的淸洗液之流量作成1公升/分。 (21) 200307985 又，因本實施形態的淸洗噴嘴5 5的結構是在主孔 55b的周圍設有複數個副孔55c，所以，能夠由主孔55b 將淸洗液吐出至晶圓W的中央部，並且由副孔55c將淸 洗液呈圓形狀地吐出於其周圍。藉此，能夠將已被攪亂的 狀態之淸洗液均等地擴散在晶圓W上，提昇雜質的除去 作用。特別是在如上所述的使晶圓旋轉的情況時非常有效 〇 且，本實施形態之淸洗處理是由於兼作以往以來的沖 洗顯像液之作用，故不會增加處理時間。 再者，淸洗噴嘴55的副孔55c並非一定是圓形，亦 可如第11圖所示，若爲小於例如主孔55c之孔的話，設 置長方形狀的副孔55c。又針對主孔55b亦可同樣地作成 矩形狀。 第12圖是第2實施形態之淸洗噴嘴的下部之擴大斷 面圖。在於此淸洗噴嘴的下端面55e，於主孔55b與副孔 5 5 c之間設有環狀溝槽5 5 d。利用設置如此的溝槽5 5 d， 在吐出淸洗液之際，比起下端面55e呈平坦面的情況，能 抑制由主孔55b所吐出的液體與副孔55c所吐出的液體之 干擾，可在晶圓上確實地產生攪亂效果。 第1 3圖是顯示本發明的第3實施形態之顯像處理單 元（DEV )的平面圖。在於第13圖，針對與第4圖之結 構要素相同者賦予相同的圖號，省略其說明。此顯像處理 單元（DEV )之淸洗噴嘴75是具有長條形狀，受到淸洗 噴嘴臂63所支承。淸洗噴嘴臂63是與噴嘴掃描臂36同 (22) 200307985 樣地設置成：在導軌44上可利用控制部40的控制來移動 於Y方向。藉此，淸洗噴嘴75移動至收容於杯狀體CP 內的晶圓W的上部位置。 第14圖是顯示該淸洗噴嘴75，（a)爲斷面圖、（b )爲平面圖。此淸洗噴嘴7 5是形成例如與晶圓的半徑大 致相同的長度之長條形狀，在內部設有：暫時將淸洗液儲 存的緩衝室75a、由此緩衝室75a貫通於下端面之吐出淸 洗液用的複數個孔。這些的孔是在噴嘴的其中一端形成1 個主孔75b，此主孔75b以外的副孔55c是形成孔徑小於 主孔75b的孔徑。藉此，能夠將由副孔75c所吐出的淸洗 液的流量作成少於由主孔75b所吐出的流量，可獲得與上 述實施形態同樣的效果。在此情況時，主孔75b的直徑例 如爲1 · 5 mm〜2.5 mm，理想是2 · 0 mm。又，副孔7 5 c的直 徑例如爲〇·3 mm〜0·7 mm，理想爲0.4 mm。又，例如淸洗 液的流量爲1公升/分時，針對流量，來自於主孔75b之 純水的吐出流量是500ml/min〜900ml/min，而來自於副孔 75c的純水的吐出流量是100ml/min〜500ml/min爲佳。 再者，能夠使用例如純水來作爲淸洗液，但，由防止 圖案倒塌的觀點來看，爲了使純水的表面張力降低，而亦 可在純水中混入介面活性劑等。 利用如此結構的淸洗噴嘴75，例如第1 5圖所示，將 淸洗噴嘴75配置成由主孔75b朝晶圓W的中心部吐出淸 洗液。然後，利用一邊使晶圓W旋轉一邊由主孔75b及 副孔75c吐出淸洗液，來在晶圓上混合淸洗液，除去雜質 (23) (23)200307985 。能夠利用由如此長條形狀的淸洗噴嘴75吐出淸洗液， 在晶圓的表面全體以短時間產生攪亂作用，提昇雜質的除 去作用。 再者，在上述實施形態，淸洗噴嘴75是作成與晶圓 W的半徑大致相同長度的長條形狀，但，亦可作成：將此 長度縮短成較晶圓的半徑短例如較半徑短40 imn，使淸洗 液不會吐出至晶圓的周緣部。藉此，能夠抑制在晶圓周緣 部產生圖案的倒塌。這是考量晶圓周緣部的周速度較中心 部的周速度快，如此，利用不吐出於周緣部，來減輕吐出 到周緣部的淸洗液給予晶圓表面的損傷之故。且，能夠抑 制吐出到周緣部的淸洗液的周速度之影響所造成的煙霧的 發生，可防止晶圓的表面受到污染。 又，亦可如第1 6圖所示，將清洗噴嘴8 5作成與晶圓 的直徑大致相同的長度之長條形狀，在此噴嘴的中心位置 設置主孔85b，且由主孔85b朝噴嘴的外側方向設置複數 個副孔85c。藉此，可進一步縮短對晶圓全面進行淸洗處 理的時間。 又，亦可改變淸洗噴嘴的各副孔的孔徑之大小。利用 例如將接近晶圓中心的副孔孔徑做大，隨著接近晶圓的周 緣部逐漸做小，來階段性地改變由淸洗噴嘴的副孔所吐出 之淸洗液的流量。其結果，能夠控制成：使淸洗液賦予晶 圓表面的衝劑對應晶圓周速度而形成均等。 在第17圖，在淸洗液供給源59連接兩個供給管82A 及82B，且將以氣體壓送淸洗液的泵浦76A及76B個別 (24) 200307985 地連結於各自的供給管，而個別作成對上述淸洗噴嘴7 5 的主孔75b與副孔75c之淸洗液的供給系統。如此，能夠 以個別控制泵浦76 A及76B使在吐出壓上產生差，來改 變將吐出的淸洗液的流速。藉此，能夠減輕因受到晶圓的 周速度之影響所賦予晶圓表面之衝擊。又，在此實施形態 是亦可適用於如第16圖所示的淸洗噴嘴85。 第1 8圖是比較以往的淸洗噴嘴、第1實施形態之淸 洗噴嘴55及第3實施形態之淸洗噴嘴75實際進行淸洗處 理的情況之析出系統缺陷的發生率的圖表。在此，發生率 是指將以以往的淸洗噴嘴進行淸洗處理時所產生的缺陷之 個數設爲100%得情況下，以本實施形態之各淸洗噴嘴進 行淸洗處理之際的缺陷個數之比率。由此圖表可得知，在 使用本實施形態之淸洗噴嘴的情況時，缺陷個數明顯地減 少〇 其次，參照第19及20圖，說明關於其他之實施形態 。在第19圖，例如2個淸洗噴嘴55A及5 5B介由供給管 58連接於淸洗液供給源59。在供給管58連接有以氣體來 壓送淸洗液之泵浦61。在淸洗噴嘴55A設有例如1個的 淸洗液之吐出孔（未圖示），而在淸洗噴嘴55B，設有例 如1個較設在淸洗噴嘴55A的吐出孔小之吐出淸洗液用 的吐出孔（未圖示）。將淸洗噴嘴55A配置在晶圓W的 中心部上，在較晶圓W的中心部更外側處配置淸洗噴嘴 5 5B。即使利用如此結構，也能夠一邊使晶圓W旋轉，一 邊由各自的淸洗噴嘴55A及55B吐出淸洗液，有效率地 (25) 200307985 產生攪亂作用，來除去雜質。 在第20圖，由淸洗噴嘴55分別獨立之供給管58A 及58B延伸，在各自的供給管58A及58B，分別連接著 與第19圖所示者相同之淸洗噴嘴55A及55B。又，在各 自的供給管58A及58B，分別設置另外的壓送泵浦61A 及6 1 B。在本實施形態，亦可控制例如另外的泵浦6 1 A及 6 1 B，在兩噴嘴做成相同的吐出壓，又，亦可分別做成不 同之吐出壓。藉此，能夠更精密地控制氣泡的發生率等之 攪亂狀態。又，亦可在供給管58A及58B分別設置獨立 的開關閥，使得能個別地控制兩噴嘴的吐出之時間點。 再者，第19及20圖之淸洗噴嘴55B是亦可設置複數 個吐出孔。又，亦可在晶圓W上於晶圓的直徑方向設置 僅將淸洗噴嘴55B掃描之機構。 第21圖是顯示在第19及20圖，由淸洗噴嘴55A及 5 5B吐出淸洗液的時間點的圖。例如先進行來自於淸洗噴 嘴55A的吐出，然後由淸洗噴嘴55B吐出。吐出的時間 點，是當由淸洗噴嘴55A吐出的淸洗液擴散到至少由淸 洗噴嘴5 5 B此吐出淸洗液的晶圓上之位置時吐出。因此， 由噴嘴55B吐出淸洗液的時間點是依據晶圓的旋轉數、吐 出量、兩噴嘴間之距離等。如此，可利用將來自於噴嘴 5 5B的吐出時間點作成較噴嘴55A慢，來使得來自於噴嘴 55A的吐出是在使來自於噴嘴55A的淸洗液擴散後進行。 藉此，能夠減輕來自於噴嘴55B的淸洗液的吐出對晶圓所 造成的衝擊，而能迴避圖案的倒塌。在此情況時，爲了提 •29- (26) 200307985 高攪亂作用，使噴嘴55B的流速越快則越有效。 其次，使用第22及23圖，說明本發明之其他實施形 態。 第22圖是使用本發明之其他實施形態的噴嘴來淸洗 基板的樣子之圖。 淸洗噴嘴174是具有：連接有主供給管182 A的主室 174A、連接有畐IJ供給管182B的副室174B。 此主供給管182A是與用來供給主淸洗液159A之主 供給源159相連接。主淸洗液159A是由主供給源159通 過主供給管182A供給至主室174A。 副供給管182B是與用來供給副淸洗液160A的副供 給源160相連接。在各自的供給管18 2A、182B分別連接 有以氣體來壓送淸洗液的泵浦176A及176B，分別進行供 給淸洗液。泵浦176A、176B是分別受到未圖示的控制部 所控制淸洗液的供給量。 使用稀釋成例如pH値成爲9〜1 0之顯像液等的鹼性 溶液作爲主淸洗液159A，而使用例如pH値更低之稀釋顯 像液的鹼性溶液作爲副淸洗液1 60A。在此，副淸洗液 160A的pH値是作成較主淸洗液159A的pH値低爲佳。 具體而言，將主淸洗液159A的pH値作成例如9〜1 1時 ，則將副淸洗液160A的pH値作成7〜8爲佳。 在主室174A，設有吐出主淸洗液用的主孔175A，而 在副室174B，設有吐出副淸洗液用的副孔175B。 其次，說明關於淸洗晶圓的製程。在進行此淸洗製程 -30- (27) 200307985 之際，預先利用未圖示的旋轉機構來使晶圓W旋轉。 在晶圓旋轉中的狀態下，如第22圖（a )所示，首先 ，使泵浦176a動作，由主孔175A將主淸洗液159A朝晶 圓W吐出。已被吐出的主淸洗液1 5 9 A是受到旋轉的離心 力而朝晶圓W的外周擴散。受到擴散的主淸洗液159 A在 晶圓W的表面形成液膜159B。 晶圓 W 上的顯像液爲例如 TMAH ( Tetramethylammonium-hydroxide )等的驗性溶液。驗性的 液膜15 9B是一邊減低不溶解物附著於基板表面，一邊擴 散。 其次，如第22圖（b )所示，使泵浦176B動作，由 副孔175B將副淸洗液160A朝晶圓W吐出。副淸洗液 160A的吐出是在吐出了主淸洗液159A的狀態下進行。這 時，主淸洗液159A與副淸洗液160A是在晶圓W上被攪 亂。形成攪亂狀態的淸洗液是在晶圓W上擴散，以對於 受到靜電力或范德瓦耳斯力而附著於晶圓W上的微晶胞 等之雜質賦予應力，來除去雜質。又，利用將來自於主孔 175A的吐出量做成較來自於副孔175B的吐出量多，來以 旋轉的離心力沖洗游離於液膜159B內的鹽。 在於本實施形態，利用將主淸洗液159A做成例如pH 値爲9〜1 1的鹼性溶液，能夠防止pH衝擊。又，利用將 副淸洗液160A作成較主淸洗液159A的pH値低之中性或 驗性溶液，能夠防止pH衝擊。 在此，pH衝擊是指在使用例如與晶圓W上的顯像液 (28) 200307985 pH値大不相同之液體作爲主淸洗液159A的情況時’已被 攪亂的顯像液等之雜質再次附著到基板上的現象。關於使 用例如與晶圓W上的顯像液pH値大不相同之液體作爲副 淸洗液1 6 0 A的情況時也相同。一般所使用的顯像液特別 容易受到pH衝擊的影響。 又，在本實施形態的情況，副淸洗液1 60A是需要與 主淸洗液159A —同攪亂顯像液’並且也需要沖洗主淸洗 液159A。副淸洗液160A是儘可能接近中性的液體爲佳， 但，當使用中性之例如純水等時，會有引起PH衝擊的可 能性。 因此，在本實施形態，首先利用吐出鹼性之主淸洗液 1 5 9a來抑制不溶解物附著到晶圓W。然後，利用pH値低 於主淸洗液159A之鹼性溶液作爲副淸洗液160A，即可緩 和pH衝擊又可引起攪亂，並且可沖洗第1液體。藉此， 能更進一步提高攪亂效果，可有效率地除去附著於顯像液 或基板上的微晶胞、不溶解物等的雜質。 又，如第23圖所示，亦可作成：將其中一方連接於 混合液供給源183的配管184之另一方連接於副供給管 182B的結構。藉此結構，能夠利用由混合供給源183所 供給的混合液183A，來稀釋副淸洗液160A。 在本實施形態，利用設於配管183的泵浦185，將混 合液183A混合於副淸洗液160A。能夠使用pH値低於副 淸洗液160A的例如純水等作爲用來稀釋副淸洗液160A 之混合液183A。利用將混合液183A混合於副淸洗液 (29) 200307985 160A，使得可以減少此副淸洗液160A的pH値，不會在 顯像液上引起反應，而能進行精度良好的淸洗。 在此，亦可設置控制部1 90，來控制成：利用使泵浦 185的壓力產生變化，使得混合於副淸洗液160A的混合 液183A的量例如逐漸變多。藉此，副淸洗液160A的pH 値不會產生急劇的變化，也不會有引起pH衝擊般的情事 發生。 其次，根據第24、258圖，說明關於本發明之其他實 施形態。第24圖是顯示由晶圓W的表面及裏面之兩面進 行淸洗的樣子之圖。 噴嘴274是具有供給主淸洗液259A用的主供給源 259與介由主供給管282A來連接的主室274A、及供給副 淸洗液260A用的副供給源260與介由副供給管282B來 連接的副室274B。在主室274A，設有吐出主淸洗液用的 主孔275A，而在副室274B，設有吐出副淸洗液用的副孔 275B。 在各自的供給管282A、282B分別連接有以氣體來壓 送淸洗液用的泵浦276A及276B，分別來進行供給淸洗液 。各自的泵浦276A、276B是是到未圖示的控制部所控制 供給淸洗液。可使用例如純水來作爲主淸洗液2 5 9 A、副 淸洗液260A。 在本實施形態，噴嘴1 74由晶圓W的表面側吐出淸 洗液，來洗淨晶圓W表面的顯像液表面。又，噴嘴274 由晶圓W的表面側吐出淸洗液，來洗淨晶圓W的裏面。 (30) 200307985 當由噴嘴274吐出淸洗液時，由主孔275A所吐出的純水 是與由副孔275B所吐出的純水一同攪亂附著於晶圓W裏 面的雜質。藉此，能夠確實地洗淨晶圓W裏面。 即，由主孔275 A、副孔274B所吐出的淸洗液被攪亂 ，受到該攪亂而發生例如氣泡。可利用以此攪亂或氣泡對 於附著於晶圓W的裏面之雜質賦予應力，來除去該雜質 。並且，此洗淨手段是由於也兼作以往以來之沖洗由晶圓 W所除去的雜質之作用，故不會增加處理時間。 第25圖（a )是顯示關於在本實施形態所使用的旋轉 夾。 連接於馬達243的旋轉夾242是具有淸洗液孔242a 、保持部244。保持部244是利用以例如未圖示的構件固 定晶圓W的外周，來保持晶圓W。淸洗液孔242a是爲了 使由噴嘴274所吐出的淸洗液到達基板裏面而開的孔。 在本實施形態所示的旋轉夾242是在中央部分稍微凹 陷。由於利用如此的形狀，當將晶圓W載置於旋轉夾242 時，能夠在晶圓W的中央部的下方形成空間，故，由噴 嘴2 74所吐出的淸洗液能夠直接到達晶圓W的中央部。 第25圖（b)是示意地顯示噴嘴、旋轉夾、杯狀體等 的位置關係的圖。 如第25圖（b )所示，設在晶圓W的裏面側之噴嘴 2 74朝晶圓W吐出淸洗液。如此被吐出之淸洗液是能夠通 過淸洗液孔242a到達晶圓W。到達的淸洗液是利用旋轉 的離心力在晶圓W上擴散。利用由主孔275A及副孔 -34· (31) 200307985 275B吐出淸洗液，使得即使在基板裏面也可發生攪亂， 來除去附著於基板裏面的雜質。來自於主孔275A的淸洗 液是如第25圖（b )的虛線所示，朝晶圓W的旋轉軸中 心被吐出。 本發明是不被限定於以上所說明過之實施形態，亦可 進行各種變形。 例如在上述各實施形態，設置主孔與副孔來作爲吐出 淸洗液用的孔，但，不一定需要將孔徑做成不同，亦可將 所有的孔徑做成相同。 又，亦可作成：使主孔與副孔之對晶圓面的淸洗液之 吐出角度不同。例如，將如第8圖所示的淸洗噴嘴55之 副孔55c的角度形成越朝向下端面55e越接近主孔。於是 ’由副孔吐出淸洗液的朝向是因朝向與由主孔55b所吐出 的淸洗液在晶圓上從晶圓中央部朝外側擴散的方向呈相反 的方向，所以可以提高氣泡的發生率等的攪亂作用。 且，能夠在適宜合理的範圍內組合在上述各實施形態 所揭示的結構而加以實施。 [產業上的利用可能性] 如上所述，若根據本發明的話，能夠有效率地攪亂顯 像液與淸洗液，來除去附著於基板上的微晶胞或不溶解物 等的雜質，而可以減輕基板發生缺陷。 【圖式簡單說明】 -35- (32) 200307985 第1圖是適用本發明的塗佈顯像處理裝置的平面圖。 第2圖是第1圖所示的塗佈顯像處理裝置的正面圖。 第3圖是第1圖所示的塗佈顯像處理裝置的背面圖。 第4圖是本發明的一實施形態之顯像處理單元的平面 圖。 第5圖是第4圖所示的顯像處理單元的斷面圖。 第6圖是顯示可利用淸洗噴嘴臂來移動的淸洗噴嘴之 斜視圖。 第7圖是顯示淸洗噴嘴與晶圓的位置之側面圖。 第8圖是第1實施形態之淸洗噴嘴的斷面圖。 第9圖是第8圖所示的淸洗噴嘴的平面圖。 第10圖（a) 、（b)是顯示顯像液的供給動作之圖 〇 第11圖是其他實施形態的淸洗噴嘴的平面圖。 第12圖是第2實施形態之淸洗噴嘴的擴大斷面圖。 第13圖是其他實施形態之顯像處理單元的平面圖。 第14圖（a) 、（b)是第3實施形態之淸洗噴嘴的 斷面圖及平面圖。 第15圖是顯示使用第14圖所示淸洗噴嘴，進行淸洗 處理時的動作之平面圖。 第16圖是顯示第14圖所示的淸洗噴嘴的變形例之平 面圖。 第17圖是顯示第14圖所示的淸洗噴嘴的供給系統的 變形例的圖。 •36- (33) 200307985 第1 8圖是比較使用以往與本發明的淸洗噴嘴的情況 時之缺陷的發生率之圖表。 第1 9圖是顯示其他實施形態之淸洗液的供給機構之 結構圖。 第20圖是顯示其他實施形態之淸洗液的供給機構之 結構圖。 第2 1圖是顯示由2個淸洗噴嘴吐出淸洗液的時間點 之圖。 第22圖（a ) 、（ b )是顯示其他實施形態之淸洗液 的供給機構之結構圖。 第23圖是顯示其他實施形態之淸洗液的供給機構之 結構圖。 第24圖是顯示其他實施形態之淸洗液的供給機構之 結構圖。 第25圖（a ) 、（ b )是顯示其他實施形態之淸洗液 的供給機構之結構圖。 [圖號說明] 1 塗佈顯像處理裝置 10 卡匣台 12 處理台 14 介面部 16 第1主晶圓搬送體 17 第2主晶圓搬送體 -37- 卡匣載置台 突起 晶圓搬送體 液溫調節泵浦 液溫調節泵浦 化學室（CHM) 晶圓搬送體 化學室（CHM) 廢棄液管 供給管 噴嘴掃描臂 控制部 框體 旋轉夾 馬達 導軌 排放口 顯像液噴嘴 驅動裝置 銷 單元底板 開關器 顯像液噴嘴 淸洗噴嘴臂 -38- 200307985 (35) 55 淸洗噴嘴 55 A 淸洗噴嘴 55B 淸洗噴嘴 55a 流路 55b 主孔 55c 副孔 55d 溝槽 55e 下端面 56 步進馬達 57 支承構件 58 供給管 58 A 供給管 58B 供給管 59 淸洗液供給源 60 噴嘴保持部 61 泵浦 61 A (壓送）泵浦 61B (壓送）泵浦 63 淸洗噴嘴臂 75 淸洗噴嘴 75a 緩衝室 75b 主孔 75c 副孔 76A 泵浦 (36) 200307985 76B 泵浦 82A 供給管 82B 供給管 85 淸洗噴嘴 85b 主孔 85c 副孔 100 曝光裝置200307985 (1) 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a lithography process for manufacturing a semiconductor device, and a substrate processing device and a substrate processing device for developing a photoresist pattern on a semiconductor substrate, for example. Method and nozzle for cleaning treatment used in these. [Prior technology] In the lithography process of semiconductor processing, a photoresist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), and a photoresist pattern is exposed on the photoresist. A photoresist pattern is formed on the wafer surface. In such a lithography process, for example, in a paddle development process, a developing liquid is supplied on a wafer, and a wafer is left in this state for a predetermined time to perform development. Then, for example, a cleaning solution is supplied to the wafer to rinse the developing solution. However, during the development process, there may be cases where a salt cell reaction forms a microcell (a collection of micro-scale mobile molecules), resulting in: This microcell is subject to static electricity or van der Waals (van der Waals') and remain in the state of being adhered to the wafer, causing defects. In addition, there may be a case where the washing solution is supplied with a pH shock, and the washing solution is supplied to the developing solution to rinse the developing solution to cause insoluble matter to precipitate. The insoluble matter is also easily attached to the crystal. circle. In addition, insoluble matter is cut from the polymer surface of the photoresist, and most of this insoluble matter is re-adhered. As described above, the microcell or insoluble matter is attached to the wafer by a strong force such as static electricity as described above. Therefore, it may not be removed by the current cleaning process. -5- (2) 200307985 [Summary of the Invention] [Disclosure of the Invention] The present invention has been developed in view of the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of removing impurities such as microcells and insoluble matter adhering to a substrate. And nozzles for cleaning treatment among these. In order to achieve the above object, the substrate processing apparatus of the present invention includes: a holding section for holding the substrate; means for supplying a processing liquid to the substrate held in the holding section; and ejecting the first liquid and the first liquid to the substrate to which the processing liquid is supplied. 2 liquid, stir the processing solution to remove impurities adhering to the substrate, and rinse the cleaning solution. In the present invention, the first liquid and the second liquid are ejected by a cleaning method on the substrate to which the processing liquid is supplied, so that the processing liquid, the first liquid, and the second liquid are disturbed, and the disturbance occurs, for example. bubble. The impurities can be stressed by this disturbance or bubbles to remove the impurities (hereinafter referred to as the disturbance effect). In addition, since this rinsing method also functions as a conventional rinse treatment liquid, it does not increase the treatment time. Here, the processing liquid is, for example, a developing liquid. For example, pure water can be used as the first liquid and the second liquid, respectively. According to an aspect of the present invention, the holding portion further includes a means for rotating the substrate, and the first liquid and the (3) 200307985 2 liquid are discharged while the substrate is rotated. For example, if the first liquid and the second liquid are discharged at the center of the substrate, the mixed liquid of the first liquid and the second liquid is subjected to the centrifugal force of rotation and flows on the substrate. Thereby, the movement energy of the disturbed liquid on the substrate surface can be increased, and the effect of removing impurities can be improved. According to an aspect of the present invention, the rinsing means is provided with a nozzle having a first discharge portion formed with a first hole for discharging the i-th liquid and a second hole formed with the second liquid. The second discharge part. By providing such a first hole and a second hole, the first liquid and the second liquid which cause a disturbance can be separated and discharged. Then, for example, if the supply system for the liquid supplied to the nozzle (here, the supply system refers to, for example, a pump or piping for pressure suppression), the size of the first hole and the size of the second hole are used. The size is made different, so that the flow rate of the liquid discharged from the hole with a small hole diameter can be made smaller than the flow rate of the liquid discharged from a hole with a large hole diameter. With this, for example, when the first liquid is discharged from the central portion of the substrate by the first fear, the disturbed liquid flows smoothly from the central portion of the substrate toward the peripheral portion of the substrate, thereby improving the removal effect of impurities. When the first liquid supply system and the second liquid supply system are separately provided, for example, the flow rate can be changed by adjusting the pressure of a pump or the like of the supply system. According to an aspect of the present invention, it is preferable that the second hole is provided in the periphery of the first hole. For example, the nozzle is arranged in the center of the substrate, the first liquid is discharged from the first hole to the center of the substrate, and the second liquid is supplied in a circular shape to the second hole through a plurality of second holes provided around the first hole. On the first liquid which is diffused on the substrate. In this way, the disturbed liquid can be evenly diffused on the base plate (4) 200307985 to improve the removal effect of impurities. This is particularly effective when the substrate is rotated as described above. In addition, if the supply system for the liquid supplied to the nozzle is the same, for example, by making the hole diameter of the second hole smaller than that of the first hole, the flow rate of the second liquid can be made smaller than the flow rate of the first liquid. However, it is possible to improve the disturbance effect such as the generation efficiency of bubbles. Specifically, the diameter of the aforementioned first hole is 1.5 mm to 2.5 mm, and the diameter of the aforementioned second hole is 0.3 mm to 0.3 mm. 7 nun. The size of the hole diameter of the first hole is such that when the liquid is discharged at a predetermined discharge pressure, the hole diameter is made smaller than 1. 5 When the nrni is small, the flow velocity of the liquid becomes too high, and the photoresist pattern may collapse due to the impact. Also, the diameter of the second hole is made such a size because when the liquid is ejected at a predetermined ejection pressure, when the aperture is made 0. When the flow rate is 7 mm or more, the flow rate becomes excessive, and the second liquid discharged onto the substrate also flows toward the center of the substrate, and the liquid is retained, causing impurities to reattach and the like, thereby reducing the removal effect. For the specific flow rates of the first liquid and the second liquid, the discharge flow rate of the first liquid is preferably 500 ml / min to 900 ml / min, and the discharge flow rate of the second liquid is preferably 100 ml / min to 500 ml / min. . With such a flow rate, the disturbed liquid can be smoothly flowed from the central portion of the substrate to the peripheral portion to remove impurities. According to an aspect of the present invention, the nozzle includes a first discharge portion and a second discharge portion. Between the grooves. Compared with, for example, the case where the discharge surfaces of the first and second discharge portions are the same, it is possible to increase the -8- (5 of the first liquid and the second liquid when the liquid is discharged by providing such a groove portion. ) 200307985 The effect of preventing interference can surely produce a disturbing effect on the substrate. In one aspect of the present invention, the discharge direction of the first liquid is different from the discharge direction of the second liquid. For example, when the discharge direction of the second liquid is an oblique direction with respect to the substrate surface toward the inside of the substrate, the second liquid is discharged in a direction opposite to the direction in which the first liquid diffuses from the center portion of the substrate to the outside of the substrate. It can increase the disturbance effect such as the occurrence rate of bubbles. According to an aspect of the present invention, the cleaning means includes a first nozzle formed with a first hole for discharging the first liquid, and a second nozzle formed with a second hole for discharging the second liquid. Thereby, two nozzles can be prepared, and the first liquid and the second liquid are discharged from the respective nozzles, thereby generating a disturbance effect such as bubbles. In this case, the flow rate of the second liquid can be made smaller than the flow rate of the first liquid by making the hole diameter of the second hole smaller than that of the first hole. As a result, the disturbing effect can be produced, and the disturbed liquid can be smoothly flowed from the central portion of the substrate to the peripheral portion to remove impurities. According to an aspect of the present invention, the first liquid is an alkaline solution, and the second liquid is a neutral or alkaline solution having a lower pH than the first liquid. The first liquid and the second liquid are preferably as close to a neutral liquid as possible. However, when neutral, such as pure water, is used, a pH shock occurs. Here, the term "pH shock" refers to a phenomenon in which impurities are generated when two types of liquids having greatly different pHs are mixed, impurities are generated on a substrate, and then they are adhered to the substrate. This phenomenon occurs when, for example, a liquid whose pH 値 is substantially different from the treatment liquid is used as the first liquid, or when a liquid whose pH 値 is significantly different from the first liquid is used as the second liquid. -9-(6) 200307985 The processing solution is alkaline, such as a developing solution having a pH value of about 10 to 12, for example. Therefore, the pH value of the first liquid can be made into an alkali value of, for example, 9 to 11. When the first liquid is discharged, the non-soluble matter is prevented from adhering to the surface of the substrate. In addition, the second liquid allows the first liquid to disturb the treatment liquid together, and further rinses the first liquid on the treatment liquid. Therefore, according to the structure of the present invention, first, the first liquid is used for rinsing so that insoluble matter does not adhere to the substrate. In addition, by using a pH lower than the first liquid, for example, a neutral or alkaline pH of 7 to 8 is easily used as the second liquid, which can ease the impact of pH and cause disturbance, and can rinse the first liquid. . This makes it possible to further increase the disturbance effect and efficiently remove impurities such as microcells and insoluble matter adhering to the processing liquid and the substrate. One aspect of the present invention further includes: means for mixing a third liquid having a lower pH than the second liquid in the second liquid; and a third liquid for controlling the second liquid to be mixed with the second liquid by the mixing means. The amount of control. After rinsing, rinsing liquid often accumulates on the treatment liquid. In particular, in the present invention, both the first liquid and the second liquid used as the rinse liquid are alkaline. When the first liquid and the second liquid are deposited on the substrate, there is a possibility that an unnecessary reaction may be caused. According to the structure of the present invention, by using a third liquid having a pH lower than the second liquid, such as a neutral third liquid, the pH of the second liquid can be reduced, and no unnecessary reaction is caused on the substrate. In addition, by providing a control unit, the amount of the third liquid mixed in the second liquid is controlled, so that the pH of the second liquid does not change sharply, and pH shock is not caused. -10- (7) (7) 200307985 One aspect of the present invention includes a first control unit to control the state in which the first liquid is discharged to the substrate by the cleaning means, and then the first liquid is discharged. Then, the second liquid is discharged. If controlled in this way, disturbances between the first liquid and the second liquid can be reliably generated in the processing liquid, and the processing liquid or impurities can be reliably removed. One aspect of the present invention further includes a cleaning means for discharging the fourth liquid and the fifth liquid into the inside of the substrate and stirring them to remove impurities attached to the inside of the substrate. The disturbance effect is also applicable to the impurities attached to the inside of the substrate. The fourth liquid and the fifth liquid are discharged by washing means, and the fourth liquid and the fifth liquid are disturbed, and for example, bubbles are generated by the disturbance. The disturbance or bubbles are used to apply stress to the impurities attached to the substrate, and the impurities can be removed. In addition, this cleaning method also functions as a conventional method for rinsing impurities removed from the substrate, and therefore does not increase the processing time. Here, for example, pure water can be used as the fourth liquid and the fifth liquid, respectively. According to an aspect of the present invention, the holding portion is a portion for holding the inside of the substrate below the substrate, and has a through hole penetrating the holding portion. The aforementioned cleaning means includes a nozzle disposed below the holding portion and ejecting the fourth liquid and the fifth liquid toward the inside of the substrate so that the nozzle can directly reach the inside of the substrate through the through hole. The inside of the substrate is held by the holding portion from below. When the inside of such a substrate is cleaned from below, it is difficult to clean the portion held by the holding portion. However, according to the structure of the present invention, the fourth liquid and the fifth liquid discharged from the nozzle can pass through the through hole -11 of the holding portion. (8) (8) 200307985, so even the part held inside the substrate can be directly reached. Thereby, the 4th liquid and the 5th liquid are disturbed in the back surface of a board | substrate, and the impurities adhering to the back surface of a board | substrate can be removed reliably. A substrate processing apparatus according to another aspect of the present invention includes: a holding portion for holding a substrate; and a long shape having a first hole and a plurality of second holes arranged in a row in a longitudinal direction for processing the supply. The first liquid and the second liquid are discharged from the first and second holes of the liquid substrate, the processing liquid is disturbed to remove impurities adhering to the substrate, and the nozzle of the processing liquid is rinsed. In the present invention, since the first nozzle and the plurality of second holes are arranged in a row in the longitudinal direction of the nozzle having a long shape, the first liquid discharged from the central portion of the substrate can be formed by a plurality of holes on the outer side. The second liquid is discharged from the hole. As a result, when, for example, the substrate is discharged while being rotated, the substrate can be fully disturbed in a short period of time, such as the generation of bubbles, and the removal efficiency of impurities can be improved. In this case, for example, the first liquid may be discharged from the first hole to the center of the substrate, and the second liquid may be discharged from the outside of the substrate outside the center of the second hole from the center of the substrate. The method includes: (a) a process of supplying a processing liquid to a substrate; (b) discharging a first liquid and a second liquid to a substrate to which the processing liquid is supplied, and disturbing the processing liquid to remove impurities adhering to the substrate, And the process of rinsing the aforementioned treatment liquid. In the present invention, when the first liquid and the second liquid are discharged onto the substrate to which the processing liquid is supplied, disturbances such as generation of bubbles can occur, and stress can be imparted to the impurities by the disturbances to remove the impurities. In addition, since it also functions as a conventional -12 · (9) 200307985 rinse treatment liquid, it does not increase the processing time. According to one aspect of the present invention, the first liquid is discharged before the second liquid. In this way, by supplying the first liquid to the substrate, the first liquid is diffused to a certain extent on the substrate, and the second liquid is discharged, thereby reducing the impact of the discharged second liquid on the substrate and avoiding the collapse of the pattern. Furthermore, the pH shock of the first liquid can be reduced to, for example, 9 to 11, and the pH of the second liquid can be reduced to, for example, 7 to 8. In this case, it is very effective in particular in the case where the flow rate of the second liquid is made faster than the flow rate of the first liquid in order to increase the disturbance effect such as generation of bubbles. According to an aspect of the present invention, the aforementioned process (b) includes: (c) a process of ejecting an alkaline solution as the first liquid; (d) from the middle of the process (c), the pH is lower than the first liquid The alkaline solution is used as the second liquid manufacturing process. Most of the treatment liquids are alkaline, such as a developing solution having a pH of about 10 to 12, so the first liquid can be made into an alkaline solution having a pH of about 10 to 12, for example. 1 In the case of a liquid, the adhesion of insoluble matter to the substrate surface is reduced. In addition, the second liquid is the first liquid which needs to be disturbed together with the first liquid, and the first liquid on the processing liquid also needs to be rinsed. The first liquid and the second liquid are preferably as close to neutral as possible. However, when neutral, such as pure water, is used, pH shock occurs. Here, the term "pH shock" refers to a case where, for example, a liquid having a pH different from that of the treatment liquid is used as the first liquid, and a liquid having a pH different from that of the first liquid is used as the second liquid, for example. The phenomenon that disturbed impurities are reattached to the substrate. However, if the structure of the present invention is used, it is possible to first cause an acid-base reaction using the first liquid. -13- (10) (10) 200307985 In addition, by using a neutral or alkaline solution having a pH value lower than the first liquid, such as a pH value of 7 to 8, as a second liquid, it can be caused while mitigating the pH shock. Stir, and rinse the 1st liquid. This makes it possible to further increase the disturbance effect, and to efficiently remove impurities such as microcells and insoluble matter adhering to the processing liquid and the substrate. An aspect of the present invention further includes (e) a process of mixing the third liquid having a pH of lower than the second liquid in the second liquid. According to this structure of the present invention, it is possible to reduce the pH of the second liquid by mixing the third liquid having a pH of lower than the second liquid. In particular, by providing a control unit to control the amount of the third liquid mixed in the second liquid, the pH of the second liquid does not change drastically, nor does it cause a pH shock. This makes it possible to efficiently remove impurities such as microcells and insoluble matter adhering to the processing liquid and the substrate. One aspect of the present invention further includes: (f) ejecting the fourth liquid and the fifth liquid from the inside of the substrate to which the processing liquid is supplied, and stirring them to remove impurities attached to the inside of the substrate . According to the structure of the present invention, the disturbing effect can be exhibited even inside the substrate, and the impurities attached to the inside of the substrate can be reliably removed. The nozzle of the present invention is a nozzle for rinsing the processing liquid on the substrate to which the processing liquid is supplied after the first liquid and the second liquid are discharged, removing impurities adhering to the substrate, and rinsing the processing liquid. A first discharge portion having a hole for discharging the first liquid, and a second discharge portion having a hole for discharging the second liquid. If such a nozzle is used to discharge the first liquid and the second liquid to the substrate to which the processing liquid is supplied, (11) 200307985 can generate a disturbance effect such as bubbles, and the stress can be applied to the impurities to remove the disturbance effect. The impurities. In addition, it also functions as a conventional rinse treatment liquid, so it does not increase the treatment time. Furthermore, the nozzle of another aspect of the present invention has a long shape, and a first hole and a plurality of second holes are arranged in a row in the longitudinal direction. The substrate is supplied with the processing liquid through the first hole and the first hole. The first liquid and the second liquid are discharged from two holes, and the processing liquid is disturbed to remove impurities adhering to the substrate. The nozzle for flushing the processing liquid is provided with a first hole formed with a hole for discharging the first liquid. A discharge portion; and a second discharge portion in which a plurality of holes for discharging the second liquid are arranged in a row in the longitudinal direction. For example, when the substrate is spouted while rotating the substrate, the substrate can be provided with a disturbance effect such as generation of bubbles in a short time, thereby improving the efficiency of removing impurities. In this case, for example, the first liquid may be discharged from the first hole to the center portion of the substrate, and the second liquid may be discharged from the outside of the substrate from the second hole outside the center portion of the substrate. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Figures 1 to 3 are diagrams showing the overall configuration of a coating and developing processing apparatus according to an embodiment of the present invention, where Figure 1 is a plan view, and Figures 2 and 3 are a front view and a rear view. This coating development processing apparatus 1 has a structure in which the following components are integrally connected to each other: a semiconductor wafer W is carried into the coating development from outside by a wafer cassette CR in a plurality of pieces, for example, 25 pieces. Processing device 1 • 15 · (12) 200307985 or cassette imaging station 10 which is carried out by the coating imaging processing device 1 and used to carry wafers in and out of the wafer cassette CR; in the coating imaging process In the processing stage 12, a single-chip type processing unit that performs predetermined processing on a wafer W is arranged in a plurality of stages at predetermined positions; it is used between the exposure devices 100 provided adjacent to the processing stage 12 The mesial portion 14 of the wafer W is transferred. On the cassette table 10, as shown in FIG. 1, a plurality of, for example, five wafer cassettes CR are placed in a row in the X direction at the positions of the protrusions 20a on the cassette mounting table 20. The wafer carrier 22 that can be moved in the cassette alignment direction (X direction) and the wafer alignment direction (Z direction) of the wafers stored in the wafer cassette CR can be selectively moved in and out toward the processing table 12 side. Each cassette CR. In addition, the wafer transfer body 22 is configured to be rotatable in the 0 direction, and as shown in FIG. 3, the wafer transfer unit 22 can also be inserted into and out of a heat treatment system unit belonging to a third processing unit portion G3 which has a multi-stage structure described later. As shown in FIG. 1, the processing table 12 is located on the rear side of the device (upper in the figure), and from the cassette table 10 side, the third processing unit section G3, the fourth processing unit section G4, and the fifth processing unit section are arranged, respectively. G5. A first main wafer transfer device A1 is provided between the third processing unit portion G3 and the fourth processing unit portion G4. In the first main wafer transfer device A1, the first main wafer transfer body 16 is provided to be selectively accessible to the first processing unit portion G1, the third processing unit portion G3, and the fourth processing unit portion G4. A second main wafer transfer device A2 is provided between the fourth processing unit portion G4 and the fifth processing unit portion G5. The second main wafer transfer device A2 is the same as the first main wafer transfer device A1. The second main wafer transfer body 17 is set to be optional. (13) 200307985 Selectively enter and exit the second processing unit portion G2, the fourth processing unit portion G4, and the fifth processing unit portion G5. Further, a heat treatment unit is provided on the back side of the first main wafer transfer device A1. For example, as shown in FIG. 3, the heat treatment unit is overlapped in multiple stages: an attachment unit (AD) 1 1 0 that hydrophobizes the wafer W, and A heating unit (HP) 113 for heating the wafer W. In addition, the attachment unit (AD) 110 has a structure that can also be used as a mechanism further including a temperature adjustment wafer W. On the back side of the second main wafer transfer device A2, a peripheral exposure device (WEE) 120 that exposes only the edges of the wafer W is provided in multiple stages, and the thickness of the photoresist film applied to the wafer W is checked. A film thickness inspection device 119 and a line width inspection device 118 for inspecting the line width of a photoresist pattern. These film thickness inspection apparatuses 119 and line width inspection apparatuses 118 may be provided outside the apparatus without being provided in the coating development processing apparatus 1. In addition, the back side of the second main wafer transfer device A2 may be arranged in the same manner as the back side of the first main wafer transfer device A 1 to constitute a heating unit (HP) 1 1 3. As shown in FIG. 3, in the third processing unit section G3, an open-type processing unit that performs a predetermined process after placing the wafer W on a mounting table: for example, a high-temperature heating that performs a predetermined heating process on the wafer W A processing unit (BAKE), a cooling processing unit (CPL) that performs a cooling process on the wafer W with a precise temperature management, and transfers the wafer W from the wafer carrier 22 to the first main wafer carrier 16 The transfer unit (TRS) of the transfer unit is divided into a transfer unit and a cooling unit at the upper and lower stages, and the transfer and cooling processing unit (TCP) is arranged in the order from the top to 10 stages, for example. Furthermore, the third processing unit G3 is provided as a spare space in the third stage of the present embodiment (14) 200307985 '. In the fourth processing unit section G4, in the order from the above, for example, a postbaking unit (POST), a transfer unit (TRS) that becomes a wafer transfer unit, and a crystal after forming a photoresist film The circle baking unit (PAB) and the cooling process unit (cpl) which are heat-treated on the circle W are overlapped into, for example, 10 segments. Further, in the fifth processing unit portion G5, for example, in the order from the above, the post-exposure bake unit (PEB), the cooling process unit (CPL) that performs the heat treatment on the exposed wafer W, and the wafer W The transfer unit (TRS) of the transfer unit overlaps into 10 segments, for example. '' The heat treatment system is, for example, as shown in the fourth processing unit section G4 in FIG. 1, a temperature adjustment plate C for temperature adjustment of the wafer W is disposed on the front side, and a heating plate for heating the wafer W is provided. Placed on the back side. In FIG. 1, the first processing unit portion G1 and the second processing unit portion G2 are arranged in the Υ direction on the front side of the device of the processing table 12 (bottom in the figure). Here, between the first processing unit section G1 and the cassette stage 10 and between the second processing unit section G2 and the mesas 14, there are respectively provided temperature adjustments for the processing liquid supplied by the respective processing unit sections G1 and G2.的 温度 温度 控制 泵 24,25. The liquid temperature adjustment pump 24,25. The clean air from an air conditioner (not shown) provided outside the coating and developing processing device 1 is supplied to the pipes 31 and 32 inside the processing unit sections G1 to G5. As shown in FIG. 2, in the first processing unit section G1, five rotary processing units for stacking a wafer W in a cup CP to perform a predetermined process on a rotating chuck are superimposed: 3 steps of photoresist coating processing unit (COT) of the photoresist film forming part, and 2 steps of bottom coating unit (BARC) for forming antireflection film to prevent reflection of light (15) 200307985 during exposure, from below The counting order overlaps into 5 segments. In the second processing unit section G2, five rotary processing units are similarly superimposed: for example, a development processing unit (DEV) as a development processing section is superimposed into five stages. Because the photoresist coating processing unit (COT), the drainage of the photoresist liquid is troublesome in structure and maintenance, so as mentioned above, it is better to arrange in the lower section. However, it can also be configured in the upper section according to needs. Further, chemical chambers (CHM) 26 and 28 for supplying the above-mentioned predetermined processing liquid to the respective processing unit sections G1 and G2 are provided at the lowermost stages of the first and second processing unit sections G1 and G2, respectively. A transportable pick-up cassette CR and a fixed type buffer cassette BR are arranged in two stages on the front surface portion of the mesial surface portion 14, and a wafer transfer body 27 is provided in the central portion. This wafer carrier 27 moves in the X and Z directions, and enters and leaves the two cassettes CR and BR. In addition, the wafer transfer body 27 is configured to be rotatable in the 0 direction, and can be inserted into and removed from the fifth processing unit portion G5. Moreover, as shown in FIG. 3, a plurality of high-precision cooling processing units (CPL) are provided on the back surface portion of the mesial surface portion 14, and, for example, two upper and lower stages are provided. The wafer transfer body 27 can also come in and out of this cooling processing unit (CPL). Next, the development processing unit (DEV) of the present invention will be described in detail. 4 and 5 are a plan view and a cross-sectional view showing a development processing unit (DEV) according to an embodiment of the present invention. In this unit, a fan cleaning unit and a unit F for supplying clean air to the inside of the frame 41 are installed above the frame 41. Then, at the center of the unit base plate 51 which is smaller in width in the Y direction than the frame body 41 is attached at the center of the unit plate 51. (16) 200307985 A ring-shaped cup CP is arranged near it, and a rotation clamp 42 is arranged inside it. . The rotary clamp 42 is configured to be rotated by the rotational driving force of the motor 43 in a state where the wafer W is fixedly held by vacuum suction. In the cup-shaped body CP, a pin 48 at the time of transferring the wafer W is provided so as to be vertically movable by a driving device 47 such as a cylinder. With this, when the switch 52 provided to be openable is opened, the wafer W can be transferred to and from the second main wafer transfer body 17 through the opening 41a. A drain port 45 for waste liquid is provided at the bottom of the cup-shaped body CP. The discharge port 45 is connected to a waste liquid pipe 33. The waste liquid pipe 33 communicates with a waste liquid □ (not shown) below by using a space N between the unit bottom plate 51 and the housing 41. The developing liquid nozzle 53 for supplying the developing liquid to the wafer W is formed in a long shape having a length substantially the same as the diameter of the wafer W, for example, and is connected to the chemical chamber (CHM) 28 through a supply pipe 34 ( (Fig. 2) A developing liquid tank (not shown). The developing liquid nozzle 53 is a nozzle holding portion 60 which is detachably attached to the nozzle scanning arm 36. The nozzle scanning arm 36 is mounted on the upper end portion of the vertical support portion 49, and is moved in the Y direction together with the vertical support portion 49 by, for example, a belt drive mechanism. The vertical support portion 49 is laid on the unit bottom plate 51 in one direction (Y Direction) can be moved horizontally on the guide rail 44. With this, the developer liquid nozzle 53 stands by in the developer liquid nozzle groove 46 arranged outside the cup-shaped body CP except for supplying developer liquid, and is transferred to the wafer W when the developer liquid is supplied. . The developing liquid nozzle 53 has a plurality of discharge holes (not shown) formed in the lower end portion thereof, and the developing liquid is discharged from the plurality of discharge holes. -20- (17) 200307985 On the side of the cup CP, a cleaning nozzle 55 for discharging a cleaning liquid is attached to the cleaning nozzle arm 54. As shown in Fig. 6, the cleaning nozzle arm 54 is provided so as to be rotatable in the 0 direction by the drive of a stepping motor 56 supported by the support member 57, for example. As a result, as shown by the dotted line in FIG. 5, when the cleaning process is performed, the cleaning nozzle 55 moves to the center portion of the wafer W accommodated in the cup CP. As shown in Fig. 7, the cleaning nozzle 55 is disposed at a position where, for example, the height t = 15 nun is calculated from the surface of the crystal circle W held by the rotation clamp 42 when the cleaning process is performed. In FIG. 5, the cleaning nozzle 55 is omitted. The above-mentioned moving mechanism of the nozzle scanning arm 36 and the cleaning mechanism of the cleaning nozzle arm 54 are driven by the control unit 40 to perform electrical control. 8 and 9 are a sectional view and a plan view of the cleaning nozzle 55 of the first embodiment. The washing nozzle 55 is connected to a washing liquid supply source 59 including a storage tank (not shown) for storing the washing liquid, a pressure pump, and the like via a supply pipe 58. This cleaning solution uses, for example, pure water. However, from the viewpoint of preventing pattern collapse, there may be a case where a surfactant is mixed with pure water in order to reduce the surface tension of pure water. Inside the nozzle, a flow path 55a through which the cleaning solution flows is provided, and a main hole 5 5b for discharging the cleaning solution is penetrated through the center of the flow path 55a to the lower end surface 55e of the nozzle. Further, around the main hole 55b, there are formed, for example, eight auxiliary holes 55c, each having a smaller diameter than the main hole 55b, penetrating from the flow path 55a to the lower end face 55e. The diameter of this main hole 5 5b is 1. 5 mm ~ 2. 5 legs, ideal is 2. 0 legs. The diameter of the auxiliary hole 55c is, for example, 0.3 mm to 0.3 mm. 7 legs, ideally 0.4 mm. -21 · (18) 200307985 is shown in Fig. 9. The diameter of a circle shown by a dotted line is constituted by 8 auxiliary holes 5 5 c, for example, 8 legs. With the cleaning nozzle 55 having such a structure, the cleaning liquid is discharged onto the wafer W, so that the liquid discharged from the main hole 5 5 b and the liquid discharged from the auxiliary hole 5 5 c can be mixed, and the wafer W Disturbances occur. With this disturbance, for example, air bubbles can be generated. Especially in this embodiment ', since the size of the main hole 55b and the size of the auxiliary hole 55c are different, the flow rate of the liquid discharged from the auxiliary hole 55c can be made smaller than the flow rate of the liquid discharged from the main hole 55b. As a result, for example, the disturbed liquid flows smoothly from the central portion of the wafer to the peripheral portion, and the removal of impurities can be improved. The pore diameter of the main hole 55b is made smaller than the diameter of the main hole 55b. 1. If the thickness is 5 mm, the flow velocity of the liquid may increase, and the impact may cause the photoresist pattern to collapse. Also, the diameter of the auxiliary hole 55c is made such a size because when its diameter is made greater than 0. When it is 7 mm or more, the flow from the auxiliary hole 55c becomes excessive, and the liquid discharged from the auxiliary hole 55c also flows toward the center of the substrate, so that the residence time of the liquid on the substrate becomes longer. As a result, impurities are re-adhered and the This reduces the removal effect. Specifically, for example, when the flow rate of the washing liquid is 1 liter / minute, the discharge flow rate of the pure water from the main hole 55b is 500ml / min to 900ml / min, and the pure water from the auxiliary hole 55c is the flow rate. The discharge flow rate is preferably 100 ml / min to 500 ml / min. Next, an example of a processing process of the coating and developing processing apparatus 1 having the above-mentioned structure will be described. -22- (19) 200307985 First, at the cassette table 10, the wafer carrier 22 enters the cassette CR containing the wafer W before processing on the cassette mounting table 20, and one cassette is taken out from the cassette CR. Wafer W. The wafer W is transferred to the first main wafer transfer device A1 via a transfer / cooling processing unit (TCP), and is transferred to, for example, an attachment unit (AD) 110 for hydrophobic treatment. Next, it is transported to, for example, a bottom coating unit (BARC). Here, during exposure, an anti-reflection film may be formed to prevent reflection of the exposure light from the wafer. Next, the wafer W is carried into a photoresist coating processing unit (COT) to form a photoresist film. When the photoresist film is formed, the wafer W is transferred to the roller baking unit (PAB) by the first main wafer transfer device A1. Here, first, the wafer W is placed on the temperature adjustment plate C, and the wafer W is moved toward the heating plate Η side while being temperature-adjusted, and is placed on the heating plate 进行 for heat treatment. After the heat treatment is performed, the wafer W is transferred to the first main wafer transfer device A1 through the temperature adjustment plate C again. Then, the cooling process unit (CPL) cools the wafer W at a predetermined temperature. Next, the second main wafer transfer device A2 may be used to take out the wafer W and transfer it to the film thickness inspection device Π 9 to measure the photoresist film thickness. Then, the wafer W is transferred to the exposure apparatus 100 through the transfer unit (TRS) and the interface portion 14 of the fifth processing unit G5, and the exposure processing is performed here. When the exposure process is completed, the wafer W is transferred to the second main wafer transfer device A2 through the transfer unit (TRS) of the mesial portion 14 and the fifth processing unit G5, and then transferred to the post-exposure baking unit (PEB). (20) 200307985 Temperature adjustment and heat treatment. After the exposure process is completed, there may be a case where the wafer w lies in the interface portion 14 once stored in the buffer cassette BR. Then, the wafer W is transferred to a development processing unit (DEV) for development processing. After this development process, a predetermined post-baking process may be performed. After the development process is completed, the wafer W is subjected to a predetermined cooling process in a cooling unit (C0L), and returned to the cassette CR via the extension unit (EXT). Next, the operation of the development processing unit (DEV) will be described. As shown in Figs. 10 (a) and (b), the developing solution nozzle 53-while moving on the stationary wafer W in the direction shown by arrow A, spit out the developing solution so that the developing solution is filled in the developing solution. Wafer W. Then, in a state where the developing solution is full on the entire wafer, the developing process is performed for a predetermined time, for example, 60 seconds. Then, as shown in FIG. 7, the cleaning nozzle 55 is disposed at the center of the wafer W, and discharges the cleaning liquid. At this time, the rinse liquid is discharged from the main hole 55b and the sub hole 55c, and the wafer W is disturbed. In the disturbed state, the washing liquid is diffused on the wafer 'to apply stress to impurities such as microcells adhered by static electricity or Van der Waals force' to remove the impurities. At the same time, the developer was rinsed by spitting out the rinse solution. At this time, 'the wafer W may be made 1 while rotating at 500 rpm, for example', and then the cleaning solution is discharged. In this way, the 'wash solution in the disturbed state can be caused to flow on the wafer by rotating centrifugal force.' The shake solution in the disturbed state can increase movement energy, thereby improving the removal effect of impurities. Furthermore, in this embodiment, the flow rate of the washing liquid supplied from the washing liquid supply source 59 is set to 1 liter / minute. (21) 200307985 In addition, since the cleaning nozzle 55 of this embodiment has a plurality of sub-holes 55c provided around the main hole 55b, the cleaning liquid can be discharged to the wafer W from the main hole 55b. In the central portion, the gargle liquid is spit out in a circular shape by the auxiliary hole 55c. Thereby, the scouring liquid in the disturbed state can be uniformly diffused on the wafer W, and the removal effect of impurities can be enhanced. This is particularly effective when the wafer is rotated as described above. Furthermore, the cleaning process of this embodiment is also used as a conventional rinse developer solution, so it does not increase the processing time. In addition, the auxiliary hole 55c of the cleaning nozzle 55 is not necessarily circular, and as shown in FIG. 11, if the auxiliary hole 55c is smaller than, for example, the main hole 55c, a rectangular auxiliary hole 55c may be provided. The main hole 55b can be similarly formed in a rectangular shape. Fig. 12 is an enlarged sectional view of a lower portion of the cleaning nozzle of the second embodiment. Here, the lower end face 55e of the cleaning nozzle is provided with an annular groove 5 5 d between the main hole 55 b and the auxiliary hole 5 5 c. By providing such a groove 5 5 d, when the cleaning liquid is discharged, the interference between the liquid discharged from the main hole 55b and the liquid discharged from the auxiliary hole 55c can be suppressed when the lower end surface 55e is flat. It can surely produce a scramble effect on the wafer. Fig. 13 is a plan view showing a developing processing unit (DEV) according to a third embodiment of the present invention. In FIG. 13, the same drawing numbers are assigned to the same structural elements as those in FIG. 4, and the description is omitted. The cleaning nozzle 75 of this development processing unit (DEV) has a long shape and is supported by the cleaning nozzle arm 63. The cleaning nozzle arm 63 is provided in the same way as the nozzle scanning arm 36 (22) 200307985: The guide 44 can be moved in the Y direction by the control of the control unit 40. Thereby, the cleaning nozzle 75 moves to the upper position of the wafer W accommodated in the cup CP. FIG. 14 shows the cleaning nozzle 75, (a) is a sectional view, and (b) is a plan view. The cleaning nozzle 75 is formed in a long shape having a length substantially the same as the radius of the wafer, for example, and a buffer chamber 75a for temporarily storing the cleaning solution is provided therein.孔 Multiple holes for lotion. These holes have one main hole 75b formed at one end of the nozzle, and the auxiliary holes 55c other than the main hole 75b are formed with a smaller diameter than the main hole 75b. Thereby, the flow rate of the washing liquid discharged from the auxiliary hole 75c can be made smaller than the flow rate discharged from the main hole 75b, and the same effect as that of the above embodiment can be obtained. In this case, the diameter of the main hole 75b is, for example, 1.5 mm to 2. 5 mm, ideally 2.0 mm. In addition, the diameter of the auxiliary hole 7 5 c is, for example, 0.3 mm to 0.7 mm, and preferably 0. 4 mm. For example, when the flow rate of the washing liquid is 1 liter / minute, the discharge flow rate of the pure water from the main hole 75b is 500ml / min to 900ml / min, and the discharge flow rate of the pure water from the auxiliary hole 75c. It is preferably 100ml / min ~ 500ml / min. In addition, for example, pure water can be used as the cleaning solution. However, from the viewpoint of preventing the pattern from collapsing, in order to reduce the surface tension of pure water, a surfactant or the like may be mixed in the pure water. With the cleaning nozzle 75 having such a structure, for example, as shown in FIG. 15, the cleaning nozzle 75 is arranged to discharge the cleaning liquid from the main hole 75 b toward the center of the wafer W. Then, while the wafer W is rotated, the rinse liquid is discharged from the main hole 75b and the auxiliary hole 75c to mix the rinse liquid on the wafer to remove impurities (23) (23) 200307985. The cleaning liquid discharged from the cleaning nozzle 75 having such a long shape can cause a disturbance in the entire surface of the wafer in a short time, thereby improving the removal effect of impurities. Furthermore, in the above-mentioned embodiment, the cleaning nozzle 75 has a long shape having a length substantially the same as the radius of the wafer W, but it may be shortened to a length shorter than the radius of the wafer, for example, by 40. Imn so that the cleaning solution is not discharged to the peripheral portion of the wafer. Thereby, it is possible to suppress pattern collapse at the peripheral edge portion of the wafer. This is to consider that the peripheral speed of the peripheral portion of the wafer is faster than the peripheral speed of the central portion. In this way, the surface of the wafer is prevented from being damaged by the cleaning solution discharged to the peripheral portion by not ejecting from the peripheral portion. In addition, it is possible to suppress the generation of smoke due to the influence of the peripheral speed of the cleaning liquid discharged to the peripheral portion, and prevent the surface of the wafer from being contaminated. In addition, as shown in FIG. 16, the cleaning nozzle 85 may be formed into a strip shape having a length substantially the same as the diameter of the wafer. A main hole 85b is provided at the center of the nozzle, and the main hole 85b faces the nozzle. A plurality of auxiliary holes 85c are provided in the outer direction. This can further reduce the time required to thoroughly clean the wafer. In addition, the size of the hole diameter of each sub-hole of the cleaning nozzle may be changed. For example, by increasing the diameter of the auxiliary hole near the center of the wafer, and gradually decreasing the peripheral portion near the wafer, the flow rate of the cleaning solution discharged from the auxiliary hole of the cleaning nozzle is changed stepwise. As a result, it is possible to control such that the granules provided on the wafer surface by the cleaning solution are formed uniformly in accordance with the peripheral speed of the wafer. In FIG. 17, two supply pipes 82A and 82B are connected to the washing liquid supply source 59, and pumps 76A and 76B that feed the washing liquid by gas pressure are individually (24) 200307985 connected to the respective supply pipes, and Separately, a supply system of the cleaning liquid for the main hole 75b and the auxiliary hole 75c of the above-mentioned cleaning nozzle 75 is formed. In this way, the pumps 76A and 76B can be individually controlled to make a difference in the discharge pressure, thereby changing the flow rate of the washing liquid to be discharged. This makes it possible to reduce the impact given to the wafer surface by the influence of the peripheral speed of the wafer. It should be noted that this embodiment is also applicable to the cleaning nozzle 85 shown in Fig. 16. Fig. 18 is a graph comparing the occurrence rates of precipitation system defects when the conventional cleaning nozzle, the cleaning nozzle 55 of the first embodiment and the cleaning nozzle 75 of the third embodiment were actually subjected to cleaning treatment. Here, the occurrence rate refers to a case where the number of defects generated when the conventional cleaning nozzle is used for cleaning processing is set to 100%, and the cleaning processing is performed by using each cleaning nozzle of this embodiment. The ratio of the number of defects. From the graph, it can be seen that when the cleaning nozzle of this embodiment is used, the number of defects is significantly reduced. Next, referring to Figs. 19 and 20, other embodiments will be described. In Fig. 19, for example, two cleaning nozzles 55A and 55B are connected to a cleaning liquid supply source 59 via a supply pipe 58. A pump 61 is connected to the supply pipe 58 to pressurize the washing liquid with gas. The washing nozzle 55A is provided with, for example, one discharge hole (not shown) of the washing liquid, and the washing nozzle 55B is provided with, for example, one discharge smaller than the discharge hole provided in the washing nozzle 55A. Liquid ejection hole (not shown). The cleaning nozzle 55A is disposed on the center portion of the wafer W, and the cleaning nozzle 55B is disposed further outside the center portion of the wafer W. Even with such a structure, the wafer W can be rotated, and the washing liquid can be discharged from the respective washing nozzles 55A and 55B. This effectively disrupts (25) 200307985 to remove impurities. In Fig. 20, separate supply pipes 58A and 58B are extended from the cleaning nozzle 55, and the same supply nozzles 58A and 58B are connected to the same cleaning nozzles 55A and 55B as shown in Fig. 19, respectively. Separate supply pipes 58A and 58B are provided with separate pressure-feed pumps 61A and 6 1 B, respectively. In this embodiment, it is also possible to control, for example, the other pumps 6 1 A and 6 1 B, to make the same discharge pressure at both nozzles, or to make different discharge pressures respectively. This makes it possible to more precisely control the disturbance state such as the occurrence rate of bubbles. In addition, independent opening and closing valves may be provided in the supply pipes 58A and 58B, respectively, so that the timing of the discharge of the two nozzles can be individually controlled. The cleaning nozzle 55B in Figs. 19 and 20 may be provided with a plurality of discharge holes. A mechanism for scanning only the cleaning nozzle 55B may be provided on the wafer W in the diameter direction of the wafer. Fig. 21 is a diagram showing the time points when the rinse liquid is discharged from the rinse nozzles 55A and 55B in Figs. 19 and 20; For example, discharge from the cleaning nozzle 55A is performed first, and then discharge is performed from the cleaning nozzle 55B. The discharge timing is when the cleaning solution discharged from the cleaning nozzle 55A diffuses to at least the position on the wafer from which the cleaning solution is discharged from the cleaning nozzle 55 5B. Therefore, the time point at which the cleaning solution is discharged from the nozzle 55B is based on the number of wafer rotations, the discharge amount, the distance between the two nozzles, and the like. In this way, the discharge time point from the nozzle 55B can be made slower than the nozzle 55A, so that the discharge from the nozzle 55A can be performed after the cleaning liquid from the nozzle 55A is diffused. This can reduce the impact of the discharge of the cleaning liquid from the nozzle 55B on the wafer, and can avoid the collapse of the pattern. In this case, in order to improve the high disturbance effect of 29- (26) 200307985, the faster the flow rate of the nozzle 55B is, the more effective it is. Next, another embodiment of the present invention will be described with reference to Figs. 22 and 23. Fig. 22 is a view showing a state in which a substrate is cleaned by using a nozzle according to another embodiment of the present invention. The cleaning nozzle 174 has a main chamber 174A to which a main supply pipe 182A is connected, and a subchamber 174B to which a 畐 IJ supply pipe 182B is connected. The main supply pipe 182A is connected to a main supply source 159 for supplying a main scouring liquid 159A. The main washing liquid 159A is supplied from the main supply source 159 to the main chamber 174A through the main supply pipe 182A. The sub-supply tube 182B is connected to a sub-supply source 160 for supplying the sub-rinsing liquid 160A. Pumps 176A and 176B that pressurize the washing liquid with gas are connected to the respective supply pipes 18 2A and 182B to supply the washing liquid respectively. The pumps 176A and 176B are respectively supplied with the washing liquid controlled by a control unit (not shown). An alkaline solution diluted to, for example, a developing solution with a pH of 9 to 10 is used as the main cleaning solution 159A, and an alkaline solution, such as a diluted developing solution with a lower pH, is used as the auxiliary cleaning solution 1 60A . Here, it is preferable that the pH of the sublime washing liquid 160A is lower than the pH of the main hyaluronic acid washing liquid 159A. Specifically, when pH 値 of the main 淸 washing liquid 159A is, for example, 9 to 11, the pH 淸 of the sub 淸 washing liquid 160A is preferably 7 to 8. The main chamber 174A is provided with a main hole 175A for discharging the main scouring lotion, and the subchamber 174B is provided with a sub hole 175B for discharging the sub-horse wash. Next, a process for cleaning wafers will be described. When performing this cleaning process -30- (27) 200307985, the wafer W is rotated in advance by a rotation mechanism (not shown). In the state where the wafer is rotating, as shown in FIG. 22 (a), first, the pump 176a is operated, and the main cleaning solution 159A is discharged from the main hole 175A toward the wafer W. The discharged main washing liquid 1 59 A is diffused toward the outer periphery of the wafer W by the centrifugal force of rotation. The diffused main cleaning solution 159A forms a liquid film 159B on the surface of the wafer W. The imaging solution on the wafer W is a test solution such as TMAH (Tetramethylammonium-hydroxide). The liquid film 15 9B is diffusive while reducing the adhesion of insoluble matter to the surface of the substrate. Next, as shown in FIG. 22 (b), the pump 176B is operated, and the sub-cleaning liquid 160A is ejected toward the wafer W from the sub-hole 175B. The discharge of the sub-rinsing lotion 160A is performed in a state where the main rinsing lotion 159A is discharged. At this time, the main cleaning solution 159A and the secondary cleaning solution 160A are disturbed on the wafer W. The scouring liquid in a disturbed state is diffused on the wafer W to remove the impurities by applying stress to impurities such as microcells that are attached to the wafer W by electrostatic force or Van der Waals force. In addition, the discharge amount from the main hole 175A is made larger than the discharge amount from the auxiliary hole 175B to wash the salt freely in the liquid film 159B by rotating centrifugal force. In this embodiment, the pH of the main rinse solution 159A is, for example, an alkaline solution having a pH of 9 to 11 to prevent pH shock. In addition, the use of 160A of the secondary cleaning solution as a neutral or empirical solution lower than the pH of the main cleaning solution 159A can prevent pH shock. Here, the pH shock refers to impurities that have been disturbed in the developing solution and the like when a liquid having a pH substantially different from that of the developing solution (28) 200307985 on wafer W is used as the main cleaning solution 159A. Reattachment to the substrate. The same applies to the case where a liquid having a pH substantially different from that of the developing solution on the wafer W is used as the sub-cleaning solution 160 A. The developer used is particularly susceptible to pH shock. In the case of the present embodiment, the auxiliary cleaning solution 160A needs to be the same as the main cleaning solution 159A, and the main cleaning solution 159A also needs to be washed. It is preferable that the auxiliary washing liquid 160A is as close to a neutral liquid as possible. However, when a neutral one such as pure water is used, there is a possibility of causing a pH shock. Therefore, in the present embodiment, first, the alkaline cleaning solution 1 5 9 a is discharged to suppress the insoluble matter from adhering to the wafer W. Then, by using an alkaline solution having a pH value lower than 159A of the main cleaning solution as the auxiliary cleaning solution 160A, the pH shock can be eased and disturbance can be caused, and the first liquid can be washed. Thereby, the disturbance effect can be further enhanced, and impurities such as microcells and insoluble matter adhering to the developing solution or the substrate can be efficiently removed. Further, as shown in Fig. 23, a configuration may be adopted in which one of the pipes 184 connected to the mixed liquid supply source 183 is connected to the auxiliary supply pipe 182B. With this configuration, it is possible to use the mixed liquid 183A supplied from the mixed supply source 183 to dilute the sub-rinsing liquid 160A. In this embodiment, the pump 185 provided in the pipe 183 is used to mix the mixed solution 183A with the sub-rinsing solution 160A. As the mixed solution 183A for diluting the auxiliary cleaning solution 160A, for example, pure water or the like having a pH lower than the auxiliary cleaning solution 160A can be used. By mixing the mixed solution 183A with the sub-wash solution (29) 200307985 160A, it is possible to reduce the pH of this sub-wash solution 160A, without causing a reaction on the developing solution, and performing a precise wash. Here, a control unit 1 90 may be provided to control the pressure of the pump 185 so that the amount of the mixed liquid 183A mixed with the sub-rinsing liquid 160A gradually increases, for example. As a result, the pH of the sub-cleaning solution 160A does not change sharply, and it does not cause a pH shock. Next, another embodiment of the present invention will be described with reference to Figs. 24 and 258. Figs. Fig. 24 is a diagram showing a state in which the wafer W is cleaned from both the front surface and the back surface. The nozzle 274 has a main supply source 259 for supplying the main cleaning solution 259A and a main chamber 274A connected via a main supply pipe 282A, and a sub supply source 260 for supplying the secondary cleaning solution 260A and a sub supply pipe 282B. Come to connect the auxiliary room 274B. The main chamber 274A is provided with a main hole 275A for discharging the main scouring lotion, and the subchamber 274B is provided with a sub hole 275B for discharging the second scooping lotion. Pumps 276A and 276B for pressure-feeding the washing liquid with gas are connected to the respective supply pipes 282A and 282B to supply the washing liquid respectively. Each of the pumps 276A and 276B is controlled to supply a washing liquid to a control unit (not shown). For example, pure water can be used as the main cleaning solution 2 5 9 A and the secondary cleaning solution 260A. In this embodiment, the nozzle 1 74 ejects a cleaning solution from the surface side of the wafer W to clean the developing solution surface of the wafer W surface. In addition, the nozzle 274 ejects a cleaning solution from the surface side of the wafer W to clean the inside of the wafer W. (30) 200307985 When the scouring liquid is discharged from the nozzle 274, the pure water discharged from the main hole 275A is used to stir the impurities attached to the inside of the wafer W together with the pure water discharged from the auxiliary hole 275B. Thereby, the inside of the wafer W can be cleaned reliably. That is, the scouring liquid discharged from the main hole 275 A and the sub hole 274B is disturbed, and, for example, bubbles are generated by the disturbance. It is possible to remove the impurities by applying stress to the impurities attached to the inside of the wafer W by the disturbance or bubbles. In addition, this cleaning method also serves as a function of washing impurities removed by the wafer W in the past, and thus does not increase the processing time. Fig. 25 (a) shows a rotary clip used in this embodiment. The rotation clip 242 connected to the motor 243 has a washing liquid hole 242 a and a holding portion 244. The holding portion 244 holds the wafer W by fixing the outer periphery of the wafer W with a member (not shown), for example. The cleaning solution hole 242a is a hole opened for the cleaning solution discharged from the nozzle 274 to reach the inside of the substrate. The rotary clip 242 shown in this embodiment is slightly recessed in the center portion. With such a shape, when the wafer W is placed on the rotating clamp 242, a space can be formed below the center portion of the wafer W. Therefore, the cleaning solution discharged from the nozzle 2 74 can directly reach the wafer W The central part. Fig. 25 (b) is a diagram schematically showing a positional relationship among a nozzle, a rotary clip, a cup, and the like. As shown in FIG. 25 (b), the nozzle 2 74 provided on the back side of the wafer W discharges a cleaning solution toward the wafer W. The thus-discharged cleaning solution can reach the wafer W through the cleaning solution hole 242a. The arriving scrubbing liquid is spread on the wafer W by the rotating centrifugal force. By using the main hole 275A and the auxiliary hole -34 · (31) 200307985 275B to discharge the cleaning solution, even the substrate can be disturbed to remove impurities attached to the substrate. The cleaning solution from the main hole 275A is discharged toward the center of the rotation axis of the wafer W as shown by the dotted line in FIG. 25 (b). The present invention is not limited to the embodiments described above, and various modifications are possible. For example, in each of the above embodiments, the main hole and the auxiliary hole are provided as holes for discharging the washing liquid. However, the hole diameters do not necessarily need to be different, and all the hole diameters may be the same. In addition, it is also possible to make the discharge angle of the cleaning liquid on the wafer surface opposite to the main hole different from that of the sub hole. For example, as shown in Fig. 8, the angle of the auxiliary hole 55c of the rinsing nozzle 55 is formed closer to the main hole as it goes toward the lower end surface 55e. Therefore, the direction in which the cleaning solution is discharged from the sub-hole is opposite to the direction in which the cleaning solution discharged from the main hole 55b is diffused from the center of the wafer to the outside, so the generation of bubbles can be increased. Rate, etc. Furthermore, the structures disclosed in the above embodiments can be combined and implemented within an appropriate and reasonable range. [Industrial Applicability] As described above, according to the present invention, it is possible to efficiently scramble the developing solution and the cleaning solution to remove impurities such as microcells and insoluble matter adhering to the substrate, and It is possible to reduce substrate defects. [Brief description of the drawings] -35- (32) 200307985 FIG. 1 is a plan view of a coating development processing apparatus to which the present invention is applied. Fig. 2 is a front view of the coating development processing apparatus shown in Fig. 1. Fig. 3 is a rear view of the coating development processing apparatus shown in Fig. 1. Fig. 4 is a plan view of a development processing unit according to an embodiment of the present invention. Fig. 5 is a sectional view of the development processing unit shown in Fig. 4. Fig. 6 is a perspective view showing a cleaning nozzle which can be moved by the cleaning nozzle arm. FIG. 7 is a side view showing the positions of the cleaning nozzle and the wafer. Fig. 8 is a sectional view of the cleaning nozzle of the first embodiment. Fig. 9 is a plan view of a rinsing nozzle shown in Fig. 8; Figs. 10 (a) and (b) are diagrams showing the supply operation of the developing solution. Fig. 11 is a plan view of a cleaning nozzle according to another embodiment. Fig. 12 is an enlarged sectional view of a cleaning nozzle of a second embodiment. Fig. 13 is a plan view of a development processing unit according to another embodiment. 14 (a) and 14 (b) are a sectional view and a plan view of the cleaning nozzle of the third embodiment. Fig. 15 is a plan view showing the operation when performing a rinsing treatment using the rinsing nozzle shown in Fig. 14; Fig. 16 is a plan view showing a modification of the rinsing nozzle shown in Fig. 14; Fig. 17 is a diagram showing a modification of the supply system of the rinsing nozzle shown in Fig. 14. • 36- (33) 200307985 Fig. 18 is a graph comparing the incidence of defects when using the conventional and the cleaning nozzles of the present invention. Fig. 19 is a block diagram showing a cleaning solution supply mechanism of a scouring liquid according to another embodiment. Fig. 20 is a configuration diagram showing a scouring liquid supply mechanism of another embodiment. Fig. 21 is a diagram showing the time points when the washing liquid is discharged from the two washing nozzles. Figs. 22 (a) and (b) are structural diagrams showing a supply mechanism of a lotion lotion in another embodiment. Fig. 23 is a block diagram showing a cleaning solution supply mechanism of a scouring liquid according to another embodiment. Fig. 24 is a block diagram showing a cleaning solution supply mechanism of a scouring liquid according to another embodiment. Figs. 25 (a) and (b) are structural diagrams showing a supply mechanism of a scouring solution in another embodiment. [Explanation of drawing numbers] 1 Coating and developing processing device 10 Cassette table 12 Processing table 14 Interface portion 16 First main wafer transfer body 17 Second main wafer transfer body -37- Cassette mounting table protruding wafer transfer body fluid Thermostat pump Liquid thermostat pump chemical chamber (CHM) Wafer carrier chemical chamber (CHM) Waste liquid pipe supply pipe nozzle Scanner arm control unit Rotary clip Motor rail discharge port Imaging liquid nozzle drive pin unit base plate Switch developer liquid nozzle cleaning nozzle arm -38- 200307985 (35) 55 cleaning nozzle 55 A cleaning nozzle 55B cleaning nozzle 55a flow path 55b main hole 55c auxiliary hole 55d groove 55e lower end surface 56 stepper motor 57 Support member 58 Supply pipe 58 A Supply pipe 58B Supply pipe 59 Wash liquid supply source 60 Nozzle holder 61 Pump 61 A (pressure feed) pump 61B (Pressure feed) pump 63 Wash nozzle arm 75 Wash nozzle 75a Buffer chamber 75b main hole 75c auxiliary hole 76A pump (36) 200307985 76B pump 82A supply pipe 82B supply pipe 85 cleaning nozzle 85b main hole 85c auxiliary hole 100 exposure device
1 10 附著單元（AD ) 113 加熱單元（HP ) 118 線寬檢查裝置 119 膜厚檢查裝置 120 周邊曝光裝置（WEE ) 159A 主淸洗液 160A 副淸洗液 174 淸洗噴嘴1 10 Attachment unit (AD) 113 Heating unit (HP) 118 Line width inspection device 119 Film thickness inspection device 120 Peripheral exposure device (WEE) 159A Main cleaning solution 160A Secondary cleaning solution 174 Cleaning nozzle
174A 主室 174B 副室 175A 主孔 175B 副孔 176A 泵浦 182A 主供給管 182B 副供給管 183 混合液供給源 183A 混合液 -40- (37) 200307985 184 配管 185 泵浦 190 控制部 242 旋轉夾 242a 淸洗液口 243 馬達 244 保持部174A main chamber 174B auxiliary chamber 175A main hole 175B auxiliary hole 176A pump 182A main supply pipe 182B auxiliary supply pipe 183 mixed liquid supply source 183A mixed liquid -40- (37) 200307985 184 pipe 185 pump 190 control section 242 rotary clamp 242a Washing liquid port 243 Motor 244 Holder
259 主供給源 259A 主淸洗液 260 副供給源 260A 副淸洗液 274 噴嘴 274A 主室 274B 副室 2 7 5 A 主孔259 Main supply source 259A Main cleaning solution 260 Sub supply 260A Secondary cleaning solution 274 Nozzle 274A Main chamber 274B Sub chamber 2 7 5 A Main hole
275B 副孔 282A 主供給管 282B 副供給管 A1 第1主晶圓搬送裝置 A2 第2主晶圓搬送裝置 CP 杯狀體 BR 緩衝卡匣 CR 晶圓匣 G1 第1處理單元部 -41 · (38) (38)200307985 G2 第2處理單元部 G3 第3處理單元部 G4 第4處理單元部 G5 第5處理單元部 BAKE 高溫加熱處理單元 CPL 冷卻處理單元 EXT 延伸單元 TRS 遞移單元 TCP 傳遞·冷卻處理單元 POST 後焙單元 PAB 滑輪烘焙單元 PEB 後曝光烘焙單元 C 溫度調節板 F 風扇過濾單元 Η 加熱板 COT 光阻劑塗佈處理單元 BARC 底部塗佈單元 DEV 顯像處理單元275B Sub-hole 282A Main supply pipe 282B Sub-supply pipe A1 First main wafer transfer device A2 Second main wafer transfer device CP Cup-shaped BR Buffer cassette CR Wafer G1 First processing unit section-41 · (38 ) (38) 200307985 G2 2nd processing unit G3 3rd processing unit G4 4th processing unit G5 5th processing unit BAKE High-temperature heating processing unit CPL Cooling processing unit EXT Extension unit TRS Transfer unit TCP transfer and cooling processing Unit POST Post-baking unit PAB Wheel baking unit PEB Post-exposure baking unit C Temperature adjustment plate F Fan filter unit 加热 Heating plate COT Photoresist coating processing unit BARC Bottom coating unit DEV Development processing unit
W 晶圓W -42-W Wafer W -42-