JP3334873B2 - Rotary substrate processing equipment - Google Patents
Rotary substrate processing equipmentInfo
- Publication number
- JP3334873B2 JP3334873B2 JP2000238575A JP2000238575A JP3334873B2 JP 3334873 B2 JP3334873 B2 JP 3334873B2 JP 2000238575 A JP2000238575 A JP 2000238575A JP 2000238575 A JP2000238575 A JP 2000238575A JP 3334873 B2 JP3334873 B2 JP 3334873B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- nozzles
- processing apparatus
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Liquid Crystal (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Weting (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、液晶用ガラス基板
の製造に好適に使用される回転式基板処理装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotary substrate processing apparatus suitably used for manufacturing a liquid crystal glass substrate.
【０００２】[0002]
【従来の技術】液晶用ガラス基板の製造においては、素
材であるガラス基板の表面にレジスト塗布、エッチン
グ、レジスト剥離等の処理が繰り返される。このような
ガラス基板の処理に使用される基板処理装置の一つとし
て回転式のものがある。2. Description of the Related Art In the production of a glass substrate for a liquid crystal, processes such as application of a resist, etching, and peeling of a resist are repeated on the surface of a glass substrate as a material. One of the substrate processing apparatuses used for processing such a glass substrate is a rotary type.
【０００３】回転式の基板処理装置は、基板をロータ上
で回転させながら、スプレーユニットにより上方から基
板の表面に処理液を供給する。より具体的には、この基
板処理装置は、２種類のスプレーユニットを備えてお
り、一方のスプレーユニットから吐出されるエッチング
液、剥離液等の薬液による処理を終えた後、他方のスプ
レーユニットから吐出される純水によりリンス処理を行
う。A rotary type substrate processing apparatus supplies a processing liquid from above to a surface of a substrate by a spray unit while rotating the substrate on a rotor. More specifically, this substrate processing apparatus is provided with two types of spray units, and after finishing processing with a chemical solution such as an etching liquid or a stripping liquid discharged from one of the spray units, from the other spray unit. A rinsing process is performed using the discharged pure water.
【０００４】図３はリンス処理に使用される従来のスプ
レーユニットのヘッド部の平面図である。スプレーユニ
ット１は、基板２の回転円の半径方向へ２列に配列され
た複数のノズル３，３・・をヘッド部に装備している。
複数のノズル３，３・・は、リンス用の純水を両側へ広
げて下方へ膜状に吐出する強力タイプであり、いずれの
列においても、隣接するノズル３，３の間で吐出液４，
４が干渉しないように、各吐出液４の膜面を回転円の半
径方向に対して所定の角度θで回転方向へ傾斜させた構
成となっている。FIG. 3 is a plan view of a head portion of a conventional spray unit used for a rinsing process. The spray unit 1 is equipped with a plurality of nozzles 3, 3,... Arranged in two rows in the radial direction of the rotating circle of the substrate 2 in the head unit.
The plurality of nozzles 3, 3,... Are of a strong type in which pure water for rinsing is spread to both sides and discharged downward in a film-like manner. ,
In order to prevent interference, the film surface of each ejection liquid 4 is inclined at a predetermined angle θ with respect to the radial direction of the rotation circle in the rotation direction.
【０００５】[0005]
【発明が解決しようとする課題】このような回転式基板
処理装置によると、基板２が回転することにより、その
表面の全周にわたってリンス用の純水が短時間で大量に
供給される。また、基板２の回転に伴う遠心力により、
基板２の表面に供給された純水が外周側へ流動してその
表面上から逐次排出される。これにより、薬液から純水
への置換が短時間で行われ、薬液処理の急速停止が可能
になる。According to such a rotary substrate processing apparatus, a large amount of pure water for rinsing is supplied in a short time over the entire circumference of the surface of the substrate 2 by rotating the substrate. Also, due to the centrifugal force accompanying the rotation of the substrate 2,
Pure water supplied to the surface of the substrate 2 flows to the outer peripheral side and is sequentially discharged from the surface. Thus, the replacement of the chemical solution with pure water is performed in a short time, and the chemical solution processing can be rapidly stopped.
【０００６】しかしながら、基板２は四角形であり、最
小回転半径Ｒ１の内側に位置する部分（内側部分Ａ）
と、その外側に位置する部分（外側部分Ｂ）、即ち、最
小回転半径Ｒ１から最大回転半径Ｒ２までの間に位置す
る部分とでは、処理条件が大きく異なることになる。具
体的には、外側部分Ｂ、特にコーナ部Ｃでは２方向に処
理液が排出されるため、基板２上の液膜厚さが他の部分
に比べて薄くなり、その結果、純水によるリンス処理で
は、薬液から純水への置換が遅れ、処理ムラが発生す
る。However, the substrate 2 has a rectangular shape, and a portion located inside the minimum turning radius R1 (inner portion A).
The processing condition is greatly different between a portion located outside the portion (outside portion B), that is, a portion located between the minimum turning radius R1 and the maximum turning radius R2. More specifically, since the processing liquid is discharged in two directions in the outer part B, particularly in the corner part C, the liquid film thickness on the substrate 2 becomes thinner than other parts, and as a result, the rinsing with pure water is performed. In the processing, the replacement of the chemical solution with pure water is delayed, and processing unevenness occurs.
【０００７】回転式基板処理装置は枚葉式装置であり、
大型基板には不可欠な装置とされているが、基板が大型
化するほど、コーナ部Ｃにおける液置換の遅れは顕著と
なる。The rotary substrate processing apparatus is a single wafer processing apparatus,
Although the apparatus is indispensable for a large-sized substrate, the larger the substrate is, the more noticeable the delay of the liquid replacement in the corner portion C is.
【０００８】本発明の目的は、大型の角形基板の場合
も、コーナ部で十分な液膜厚さを確保できる回転式基板
処理装置を提供することにある。It is an object of the present invention to provide a rotary substrate processing apparatus capable of securing a sufficient liquid film thickness at a corner even in the case of a large rectangular substrate.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明の回転式基板処理装置は、基板をロータ上で
回転させながら、スプレーユニットにより上方から基板
の表面に処理液を供給する回転式基板処理装置におい
て、前記スプレーユニットは、基板回転円の半径方向に
沿って少なくとも２列に配列された複数のノズルを備え
ており、複数のノズルは、処理液を両側へ広げて下方へ
膜状に吐出すると共に、各ノズルから吐出される処理液
の膜面の回転円半径方向に対する傾斜角度θが、基板回
転方向に対して上流側に配列されたノズルより下流側に
配列されたノズルで小となるように構成されたものであ
る。In order to achieve the above object, a rotary substrate processing apparatus of the present invention supplies a processing liquid from above to a surface of a substrate by a spray unit while rotating the substrate on a rotor. In the rotary substrate processing apparatus, the spray unit includes a plurality of nozzles arranged in at least two rows along a radial direction of the substrate rotation circle, and the plurality of nozzles spread the processing liquid to both sides and move downward. The nozzles that discharge in the form of a film and that are arranged on the downstream side of the nozzles arranged on the upstream side with respect to the substrate rotation direction, the inclination angle θ of the film surface of the processing liquid discharged from each nozzle with respect to the radius of rotation circle And is configured to be small.
【００１０】本発明の回転式基板処理装置においては、
複数のノズルから吐出される処理液の膜面の回転円半径
方向に対する傾斜角度θが、上流側の列より下流側の列
で小とされていることから、上流側の列のノズルから基
板の表面上に供給された処理液が、下流側の列のノズル
から基板の表面上に供給された処理液によって基板上で
堰止められる形態となる。このため、流量を極端に増大
させずとも、基板コーナ部で十分な液膜厚さを確保する
ことが可能になる。[0010] In the rotary substrate processing apparatus of the present invention,
Since the inclination angle θ of the film surface of the processing liquid discharged from the plurality of nozzles with respect to the radial direction of the rotating circle is smaller in the downstream row than in the upstream row, the substrate liquid flows from the nozzle in the upstream row to the substrate. The processing liquid supplied on the surface is blocked on the substrate by the processing liquid supplied from the nozzles in the downstream row onto the surface of the substrate. For this reason, it is possible to secure a sufficient liquid film thickness at the substrate corner portion without extremely increasing the flow rate.
【００１１】前記傾斜角度θは、上流側に配列されたノ
ズルでは、基板上への液供給を促進する点から＋１０〜
１２０度が好ましく、＋４５〜９０度が特に好ましい。
下流側に配列されたノズルでは、堰止め機能を促進する
点から−１５〜＋４５度が好ましく、−１０〜＋３０度
が特に好ましい。また、角度差Δθとしては液膜厚さの
確保の点から３０〜７０度が好ましい。The above-mentioned inclination angle θ is set to +10 to +10 from the point that the nozzle arranged on the upstream side promotes the liquid supply onto the substrate.
120 degrees is preferable, and +45 to 90 degrees is particularly preferable.
For the nozzles arranged on the downstream side, the angle is preferably -15 to +45 degrees, and particularly preferably -10 to +30 degrees, from the viewpoint of promoting the damming function. The angle difference Δθ is preferably 30 to 70 degrees from the viewpoint of securing the liquid film thickness.
【００１２】前記スプレーユニットは、急速な液置換を
必要とする薬液処理後のリンス処理用として特に好適で
ある。The spray unit is particularly suitable for rinsing treatment after chemical treatment requiring rapid liquid replacement.
【００１３】[0013]
【発明の実施の形態】以下に本発明の実施形態を図面に
基づいて詳細に説明する。図１は本発明の１実施形態を
示すスプレーユニットのヘッド部の平面図、図２は同ヘ
ッド部の側面図である。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a plan view of a head part of a spray unit showing one embodiment of the present invention, and FIG. 2 is a side view of the head part.
【００１４】本実施形態の回転式基板処理装置は、液晶
用ガラス基板のレジスト剥離処理に使用される。この回
転式基板処理装置は、図示されない処理槽内に、基板１
０を水平に支持して回転させるロータと、２種類のスプ
レーユニットとを備えている。第１のスプレーノズル
は、図示されない薬液処理用であり、回転する基板１０
の表面上に剥離液を供給する。第２は薬液処理後のリン
ス処理に使用されるスプレーユニット２０である。The rotary substrate processing apparatus of this embodiment is used for resist stripping of a liquid crystal glass substrate. The rotary substrate processing apparatus includes a substrate 1 in a processing tank (not shown).
It is provided with a rotor that supports and rotates 0 horizontally and two types of spray units. The first spray nozzle is used for processing a chemical solution (not shown).
Is supplied on the surface of the substrate. The second is a spray unit 20 used for rinsing processing after chemical liquid processing.
【００１５】リンス用のスプレーユニット２０は、水平
なヘッド２１を備えている。ヘッド２１は、ロータの側
方に垂直に立設された逆Ｌ形の支持部材２２に取り付け
られている。支持部材２２は、ヘッド２１を垂直部の軸
方向に沿って昇降駆動すると共に垂直部回りに旋回駆動
し、これらの駆動により、ヘッド２１をロータ側方の退
避位置とロータ上の使用位置とに移動させる。そして、
使用位置では、ヘッド２１はロータ上の基板１０の回転
円の半径方向に沿ってほぼ回転中心から最大回転半径Ｒ
２の間に配置される。The rinsing spray unit 20 has a horizontal head 21. The head 21 is attached to an inverted L-shaped support member 22 that stands vertically on the side of the rotor. The support member 22 drives the head 21 to move up and down along the axial direction of the vertical portion and to rotate around the vertical portion. With these drives, the head 21 is moved to the retracted position on the rotor side and the use position on the rotor. Move. And
In the use position, the head 21 moves from the center of rotation substantially along the radial direction of the rotating circle of the substrate 10 on the rotor to the maximum turning radius R
2 between.
【００１６】ヘッド２１には、多数個のノズル２３がヘ
ッド長手方向に２列に設けられている。多数個のノズル
２３は、いずれも真下を向き、リンス用の純水を両側へ
所定角度で広げた膜状にして扇状に吐出するタイプであ
り、各列ごとにヘッダ２５に取り付けられている。そし
て、これらのノズル２３は各列で以下のように構成され
ている。The head 21 has a plurality of nozzles 23 provided in two rows in the longitudinal direction of the head. Each of the plurality of nozzles 23 is directed downward, and is a type in which pure water for rinsing is sprayed in a fan shape in the form of a film spread to both sides at a predetermined angle, and is attached to the header 25 for each row. These nozzles 23 are configured in each row as follows.
【００１７】ロータ上の基板１０の回転円の回転方向に
対して上流側のノズル列Ｕでは、各ノズル２３ｕは基板
１０の回転円の半径線上に整列しており、吐出液２４ｕ
の膜面が半径線に対して回転方向へ所定の角度θｕで傾
斜している。この傾斜角度θｕは＋１０〜１２０度の範
囲内が好ましく、ここでは約６０度である。In the nozzle row U on the upstream side with respect to the rotation direction of the rotation circle of the substrate 10 on the rotor, the nozzles 23u are aligned on the radius line of the rotation circle of the substrate 10, and the discharge liquid 24u
Is inclined at a predetermined angle θu in the rotational direction with respect to the radius line. The inclination angle θu is preferably in the range of +10 to 120 degrees, and is about 60 degrees here.
【００１８】一方、ロータ上の基板１０の回転円の回転
方向に対して下流側のノズル列Ｄでは、各ノズル２３ｄ
は基板１０の回転円の半径線に平行な線上に整列してお
り、吐出液２４ｄの膜面が半径線に対して回転方向へ所
定の角度θｄで傾斜している。この傾斜角度θｄは、上
流側のノズル列Ｕでの傾斜角度θｕより小さいことが必
要で、−１５〜＋４５度の範囲内が好ましく、ここでは
約１０度である。従って、角度差Δθ（θｕ−θｄ）
は、ここでは約５０度である。On the other hand, in the nozzle row D on the downstream side in the rotation direction of the rotation circle of the substrate 10 on the rotor, each nozzle 23d
Are aligned on a line parallel to the radius line of the rotating circle of the substrate 10, and the film surface of the discharge liquid 24d is inclined at a predetermined angle θd in the rotation direction with respect to the radius line. This inclination angle θd needs to be smaller than the inclination angle θu of the nozzle row U on the upstream side, and is preferably in the range of −15 to +45 degrees, and is about 10 degrees here. Therefore, the angle difference Δθ (θu−θd)
Is about 50 degrees here.
【００１９】次に、このように構成された本実施形態の
回転式基板処理装置の機能について説明する。Next, the function of the thus configured rotary substrate processing apparatus of the present embodiment will be described.
【００２０】図示されない薬液処理用スプレーユニット
のヘッドから、回転する基板１０の表面上へ剥離液が供
給されることにより、その表面に付着するレジストが除
去される。剥離液の供給が終わると、上記ヘッドが基板
１０上から退避し、代わってスプレーユニット２０のヘ
ッド２１が退避位置から基板１０上の使用位置へ移動す
る。そして、ノズル２３ｕ及び２３ｄから一斉に純水が
吐出される。By supplying the stripping solution onto the surface of the rotating substrate 10 from the head of the chemical liquid processing spray unit (not shown), the resist adhering to the surface is removed. When the supply of the stripping liquid is completed, the head retracts from above the substrate 10, and the head 21 of the spray unit 20 moves from the retracted position to the use position on the substrate 10 instead. Then, pure water is simultaneously discharged from the nozzles 23u and 23d.
【００２１】これにより、回転する基板１０の表面上に
全周にわたってリンス用の純水が供給される。基板１０
の表面上に供給された純水は、外周側へ流動してその表
面上から逐次排出される。これにより、薬液から純水へ
の置換が行われ、剥離処理が停止される。Thus, pure water for rinsing is supplied over the entire surface of the rotating substrate 10 for rinsing. Substrate 10
The pure water supplied on the surface of the surface flows toward the outer peripheral side and is sequentially discharged from the surface. Thereby, the chemical solution is replaced with pure water, and the peeling process is stopped.
【００２２】ここで、基板１０の回転円の回転方向に対
して上流側のノズル列Ｕでは、吐出液２４ｕの膜面が半
径線に対して比較的大きい約６０度の角度θｕで回転方
向に傾斜している。この向きは、基板１０の表面上での
純水の流動方向にほぼ一致している。このため、上流側
のノズル２３ｕから基板１０の表面上に吐出された純水
は、流動性がよく、下流側へ効率良く供給される。Here, in the nozzle row U on the upstream side with respect to the rotation direction of the rotation circle of the substrate 10, the film surface of the discharged liquid 24u is rotated in the rotation direction at an angle θu of about 60 degrees which is relatively large with respect to the radius line. It is inclined. This direction substantially matches the flow direction of pure water on the surface of the substrate 10. Therefore, the pure water discharged from the nozzle 23u on the upstream side onto the surface of the substrate 10 has good fluidity and is efficiently supplied to the downstream side.
【００２３】一方、基板１０の回転円の回転方向に対し
て下流側のノズル列Ｄでは、吐出液２４ｄの膜面が半径
線に対して比較的小さい約１０度の角度θｄで回転方向
に傾斜している。このため、下流側のノズル２３ｄから
基板１０の表面上に吐出された純水は、流動性が悪く、
上流側から供給されてくる純水を効率的に堰止める。そ
の結果、スプレーユニット２０の容量を増大させずと
も、上流側のノズル列Ｕと下流側のノズル列Ｄの間で純
水の膜厚が増大する。従って、基板１０の最小回転半径
Ｒ１の外側に位置する部分、特にコーナ部においても十
分な水膜厚さが確保され、液置換の遅れが回避される。On the other hand, in the nozzle row D on the downstream side with respect to the rotation direction of the rotation circle of the substrate 10, the film surface of the discharge liquid 24d is inclined in the rotation direction at an angle θd of about 10 degrees which is relatively small with respect to the radius line. are doing. Therefore, the pure water discharged from the downstream nozzle 23d onto the surface of the substrate 10 has poor fluidity,
Efficiently block pure water supplied from the upstream side. As a result, the thickness of pure water increases between the upstream nozzle row U and the downstream nozzle row D without increasing the capacity of the spray unit 20. Therefore, a sufficient water film thickness is secured even at a portion located outside the minimum rotation radius R1 of the substrate 10, particularly at a corner portion, and a delay in liquid replacement is avoided.
【００２４】上記実施形態では、基板処理装置は液晶用
ガラス基板のレジスト剥離処理に使用されているが、エ
ッチング処理にも同様に有効である。In the above embodiment, the substrate processing apparatus is used for the resist stripping process of the glass substrate for the liquid crystal, but it is similarly effective for the etching process.
【００２５】[0025]
【発明の効果】以上に説明したとおり、本発明の回転式
基板処理装置は、基板回転円の半径方向に沿って少なく
とも２列にノズルを配列し、各ノズルから吐出される処
理液の膜面の回転円半径方向に対する傾斜角度θを、基
板回転方向に対して上流側に配列されたノズルより下流
側に配列されたノズルで小とすることにより、流量を極
端に増大させずとも、基板コーナ部で十分な液膜厚さを
確保できる。従って、大型の角形基板の場合も処理ムラ
を経済的に回避できる。As described above, in the rotary substrate processing apparatus of the present invention, the nozzles are arranged in at least two rows along the radial direction of the substrate rotation circle, and the film surface of the processing liquid discharged from each nozzle is formed. The angle of inclination θ with respect to the radial direction of the rotating circle is made smaller at the nozzles arranged downstream than the nozzles arranged at the upstream side with respect to the substrate rotation direction, so that the flow rate of the substrate corner can be increased without extremely increasing the flow rate. A sufficient liquid film thickness can be secured in the portion. Therefore, even in the case of a large square substrate, processing unevenness can be economically avoided.
【図１】本発明の１実施形態を示すスプレーユニットの
ヘッド部の平面図である。FIG. 1 is a plan view of a head unit of a spray unit showing one embodiment of the present invention.
【図２】同ヘッド部の側面図である。FIG. 2 is a side view of the head unit.
【図３】従来のスプレーユニットのヘッド部の平面図で
ある。FIG. 3 is a plan view of a head portion of a conventional spray unit.
１０ 基板 ２０ スプレーユニット ２１ ヘッド ２３ ノズル ２４ 吐出液 DESCRIPTION OF SYMBOLS 10 Substrate 20 Spray unit 21 Head 23 Nozzle 24 Discharge liquid
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｇ０２Ｆ 1/13 １０１ Ｇ０２Ｆ 1/1333 ５００ 1/1333 ５００ Ｇ０３Ｆ 7/40 ５２１ Ｇ０３Ｆ 7/40 ５２１ 7/42 7/42 Ｈ０１Ｌ 21/30 ５７２Ｂ Ｈ０１Ｌ 21/306 21/306 Ｒ (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 H01L 21/304 H01L 21/306 B08B 3/00 ────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 7 Identification code FI G02F 1/13 101 G02F 1/1333 500 1/1333 500 G03F 7/40 521 G03F 7/40 521 7/42 7/42 H01L 21 / 30 572B H01L 21/306 21/306 R (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/027 H01L 21/304 H01L 21/306 B08B 3/00
Claims (3)
レーユニットにより上方から基板の表面に処理液を供給
する回転式基板処理装置において、前記スプレーユニッ
トは、基板回転円の半径方向に沿って少なくとも２列に
配列された複数のノズルを備えており、複数のノズル
は、処理液を両側へ広げて下方へ膜状に吐出すると共
に、各ノズルから吐出される処理液の膜面の回転円半径
方向に対する傾斜角度θが、基板回転方向に対して上流
側に配列されたノズルより下流側に配列されたノズルで
小となるように構成されていることを特徴とする回転式
基板処理装置。1. A rotary substrate processing apparatus for supplying a processing liquid from above to a surface of a substrate by a spray unit while rotating the substrate on a rotor, wherein the spray unit includes at least a radial direction of a substrate rotation circle. A plurality of nozzles arranged in two rows are provided. The plurality of nozzles spreads the processing liquid to both sides and discharges the liquid downward in a film shape, and the radius of rotation of the film surface of the processing liquid discharged from each nozzle. A rotary substrate processing apparatus characterized in that the inclination angle θ with respect to the direction is smaller for nozzles arranged downstream than nozzles arranged upstream with respect to the substrate rotation direction.
ノズルでは＋１０〜１２０度であり、下流側に配列され
たノズルでは−１５〜＋４５度である請求項１に記載の
回転式基板処理装置。2. The rotary substrate according to claim 1, wherein the inclination angle θ is +10 to 120 degrees for the nozzles arranged on the upstream side, and -15 to +45 degrees for the nozzles arranged on the downstream side. Processing equipment.
に使用される純水である請求項１に記載の回転式基板処
理装置。3. The rotary substrate processing apparatus according to claim 1, wherein the processing liquid is pure water used for a rinsing process after a chemical solution process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000238575A JP3334873B2 (en) | 2000-08-07 | 2000-08-07 | Rotary substrate processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000238575A JP3334873B2 (en) | 2000-08-07 | 2000-08-07 | Rotary substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002057080A JP2002057080A (en) | 2002-02-22 |
| JP3334873B2 true JP3334873B2 (en) | 2002-10-15 |
Family
ID=18730260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000238575A Expired - Lifetime JP3334873B2 (en) | 2000-08-07 | 2000-08-07 | Rotary substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3334873B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4312997B2 (en) * | 2002-06-04 | 2009-08-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and nozzle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1092784A (en) * | 1996-09-10 | 1998-04-10 | Toshiba Microelectron Corp | Wafer treatment equipment and wafer treatment method |
| JP3680897B2 (en) * | 1997-11-27 | 2005-08-10 | 大日本スクリーン製造株式会社 | Processing liquid discharge nozzle of substrate processing apparatus |
-
2000
- 2000-08-07 JP JP2000238575A patent/JP3334873B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002057080A (en) | 2002-02-22 |
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