CN117542762A - Silicon wafer cleaning method and silicon wafer cleaning equipment - Google Patents
Silicon wafer cleaning method and silicon wafer cleaning equipment Download PDFInfo
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- CN117542762A CN117542762A CN202311605017.5A CN202311605017A CN117542762A CN 117542762 A CN117542762 A CN 117542762A CN 202311605017 A CN202311605017 A CN 202311605017A CN 117542762 A CN117542762 A CN 117542762A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 223
- 239000010703 silicon Substances 0.000 title claims abstract description 223
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 222
- 238000004140 cleaning Methods 0.000 title claims abstract description 164
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000007921 spray Substances 0.000 claims abstract description 144
- 239000007788 liquid Substances 0.000 claims abstract description 79
- 239000003814 drug Substances 0.000 claims abstract description 40
- 238000005507 spraying Methods 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 22
- 238000000889 atomisation Methods 0.000 claims description 20
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 20
- 239000012498 ultrapure water Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 180
- 229910052751 metal Inorganic materials 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000005498 polishing Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a silicon wafer cleaning method and silicon wafer cleaning equipment, and belongs to the technical field of semiconductor manufacturing. Silicon wafer cleaning equipment includes: the rotary fixing structure is used for bearing the silicon wafer and driving the silicon wafer to rotate on a horizontal plane; the first cleaning structure is arranged right above the rotary fixing structure and comprises at least one first cleaning spray head and a first cleaning liquid supply structure communicated with the first cleaning spray head, and the first cleaning spray head is used for spraying the cleaning liquid to the front surface of the silicon wafer so as to clean the front surface of the silicon wafer; the second cleaning structure is arranged right below the rotary fixing structure and comprises at least one second spray type spray head and a second cleaning liquid medicine providing structure communicated with the second spray type spray head, and the second spray type spray head is used for spraying the cleaning liquid medicine to the back surface of the silicon wafer so as to clean the back surface of the silicon wafer. The technical scheme of the invention can improve the cleaning effect on the back surface of the silicon wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a silicon wafer cleaning method and silicon wafer cleaning equipment.
Background
Chemical Mechanical Polishing (CMP) refers to a process of planarizing a wafer surface using chemical reactions and mechanical friction. In order to further improve the flatness and cleanliness of the silicon wafer and meet the increasingly strict process requirements of the semiconductor industry, the chemical mechanical polishing process is also continuously optimized.
In the prior art, chemical mechanical polishing of a silicon wafer is mainly divided into two steps of double-sided polishing and final polishing. The double-sided polishing can polish the front surface and the back surface of the silicon wafer at the same time, is favorable for rapidly removing damaged layers on the front surface and the back surface of the silicon wafer, and primarily controls the flatness and the thickness of the silicon wafer. And finally polishing is mainly performed on the front surface of the silicon wafer, so that the flatness of the silicon wafer is further optimized, and residual particles are rapidly stripped and removed.
In order to clean particles, polishing liquid and other impurities remained after the chemical mechanical polishing of the silicon wafer at the first time, the polishing machine is linked with the single-chip cleaning machine. After the silicon wafer is subjected to final polishing, the silicon wafer can be primarily cleaned in a single-chip cleaning machine at the first time, so that the cleanliness level of the surface of the silicon wafer can be effectively improved. In the cleaning process of the single-chip cleaning machine, the front side of the silicon wafer is always kept upwards, the cleaning liquid medicine on the back side of the silicon wafer is influenced by gravity, and the time for remaining on the back side of the silicon wafer is short, so that the cleaning effect of the single-chip cleaning machine on the back side of the silicon wafer is relatively poor. In the subsequent final cleaning process of the silicon wafer with insufficient back surface cleaning, impurities on the back surface of the silicon wafer can be flushed to the front surface of the silicon wafer, and the yield and quality of the silicon wafer are affected.
Disclosure of Invention
In order to solve the technical problems, the embodiment of the invention provides a silicon wafer cleaning method and a silicon wafer cleaning device, which can improve the cleaning effect on the back surface of a silicon wafer.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the invention is as follows:
a silicon wafer cleaning apparatus comprising:
the rotary fixing structure is used for bearing the silicon wafer and driving the silicon wafer to rotate on a horizontal plane;
the first cleaning structure is arranged right above the rotary fixing structure and comprises at least one first cleaning spray head and a first cleaning liquid supply structure communicated with the first cleaning spray head, and the first cleaning spray head is used for spraying cleaning liquid to the front surface of the silicon wafer so as to clean the front surface of the silicon wafer;
the second cleaning structure is arranged right below the rotary fixing structure and comprises at least one second spray type spray head and a second cleaning liquid supply structure communicated with the second spray type spray head, and the second spray type spray head is used for spraying the cleaning liquid to the back of the silicon wafer so as to clean the back of the silicon wafer.
In some embodiments, the first cleaning head comprises at least one of:
the hydrogen fluoride liquid medicine spray head is used for spraying the hydrogen fluoride liquid medicine to the front surface of the silicon wafer;
the ozone water spray head is used for spraying ozone water to the front surface of the silicon wafer;
and the ultrapure water spray head is used for spraying ultrapure water to the front surface of the silicon wafer.
In some embodiments, the second spray head comprises at least one of:
the hydrogen fluoride spray nozzle is used for spraying hydrogen fluoride liquid medicine to the back surface of the silicon wafer;
the ozone water spray nozzle is used for spraying ozone water to the back surface of the silicon wafer;
and the ultrapure water spray nozzle is used for spraying ultrapure water to the back surface of the silicon wafer.
In some embodiments, the angle between the second spray nozzle and the horizontal plane is adjustable.
In some embodiments, the included angle between the second spray nozzle and the horizontal plane is between 45 degrees and 60 degrees.
In some embodiments, the nozzle of the second spray nozzle includes a plurality of spray holes and a baffle plate corresponding to the spray holes, and the opening degree of the spray holes can be adjusted by moving the baffle plate.
In some embodiments, the second spray head comprises:
an air duct;
the atomization main body is cylindrical, the inner space of the atomization main body is an airflow channel, the airflow channel is provided with an airflow outlet and an airflow inlet, the airflow inlet is communicated with the air duct, the atomization main body is provided with a liquid supply channel, the liquid supply channel is communicated with the airflow channel, liquid in the airflow channel is atomized by airflow and the atomized fluid is blown out from the airflow outlet.
In some embodiments, the silicon wafer cleaning apparatus further comprises:
the upper brush is used for cleaning the front surface of the silicon wafer when the first cleaning structure sprays cleaning liquid medicine to the front surface of the silicon wafer;
and the lower brush is used for cleaning the back surface of the silicon wafer when the second cleaning structure sprays cleaning liquid medicine to the back surface of the silicon wafer.
In some embodiments, the silicon wafer cleaning apparatus further comprises:
and the nitrogen spray head is used for spraying nitrogen to the surface of the cleaned silicon wafer so as to dry the silicon wafer.
The embodiment of the invention also provides a silicon wafer cleaning method, which comprises the following steps:
providing the silicon wafer cleaning equipment, and fixing the silicon wafer on the rotary fixing structure;
and controlling the rotation fixing structure to bear the rotation of the silicon wafer, and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer.
The beneficial effects of the invention are as follows:
in this embodiment, when cleaning the silicon wafer, design the nozzle below the silicon wafer into the second spray type shower nozzle, the cleaning solution that jets out from the second spray type shower nozzle is atomizing form, and the area of contact of atomizing form cleaning solution and the silicon wafer back is bigger to can remain at the silicon wafer back for a longer time, can effectively improve the cleaning performance to the silicon wafer back, and then improve the yield and the quality of silicon wafer.
Drawings
FIG. 1 shows a schematic diagram of a prior art silicon wafer cleaning apparatus;
FIG. 2 shows a schematic structural view of a silicon wafer cleaning apparatus according to an embodiment of the present invention.
Reference numerals
01 rotary fixing structure
02. Silicon wafer
03. Round hole type nozzle
04. Second spray type nozzle
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
Fig. 1 shows a schematic structure of a silicon wafer cleaning device in the prior art, as shown in fig. 1, when the silicon wafer cleaning device cleans a silicon wafer 02, a round hole-shaped nozzle 03 is arranged below the back surface of the silicon wafer 02, cleaning liquid sprayed by the round hole-shaped nozzle 03 is in a relatively concentrated water column shape, and after contacting the back surface of the silicon wafer 02, the cleaning liquid can quickly drop down due to the action of gravity, so that the retention time of the cleaning liquid on the back surface of the silicon wafer 02 is far less than the retention time of the front surface of the silicon wafer 02, and the cleaning capability of the silicon wafer cleaning device on the back surface of the silicon wafer 02 is weaker.
In order to solve the technical problems, the embodiment of the invention provides a silicon wafer cleaning method and a silicon wafer cleaning device, which can improve the cleaning effect on the back surface of a silicon wafer.
The embodiment of the invention provides silicon wafer cleaning equipment, as shown in fig. 2, comprising:
the rotary fixing structure 01 is used for bearing the silicon wafer 02 and driving the silicon wafer 02 to rotate on a horizontal plane;
the first cleaning structure is arranged right above the rotary fixing structure 01 and comprises at least one first cleaning spray head and a first cleaning liquid supply structure communicated with the first cleaning spray head, and the first cleaning spray head is used for spraying cleaning liquid to the front surface of the silicon wafer 02 so as to clean the front surface of the silicon wafer 02;
the second cleaning structure is arranged right below the rotary fixing structure 01 and comprises at least one second spray type spray head 04 and a second cleaning liquid supply structure communicated with the second spray type spray head 04, and the second spray type spray head 04 is used for spraying the cleaning liquid to the back surface of the silicon wafer 02 so as to clean the back surface of the silicon wafer 02.
In this embodiment, when cleaning the silicon wafer, design the nozzle below the silicon wafer into the second spray type shower nozzle, the cleaning solution that jets out from the second spray type shower nozzle is atomizing form, and the area of contact of atomizing form cleaning solution and the silicon wafer back is bigger to can remain at the silicon wafer back for a longer time, can effectively improve the cleaning performance to the silicon wafer back, and then improve the yield and the quality of silicon wafer.
In some embodiments, the first cleaning head comprises at least one of:
the hydrogen fluoride liquid medicine spray head is used for spraying hydrogen fluoride liquid medicine to the front surface of the silicon wafer 02, and the main function of the hydrogen fluoride liquid medicine is to remove an oxide film on the surface of the silicon wafer, and in the process of removing the oxide film, metal elements wrapped in the oxide film are removed along with the removal of the oxide film, so that the effect of removing metal impurities on the front surface of the silicon wafer is achieved;
the ozone water spray head is used for spraying ozone water to the front surface of the silicon wafer, and has the main functions of removing organic matters and particles on the surface of the silicon wafer and oxidizing the surface of the silicon wafer, so that metal elements on the surface of the silicon wafer can be wrapped in an oxide film, and the oxide film can be removed by using hydrogen fluoride liquid medicine in the follow-up process, so that the metal elements wrapped in the oxide film are removed;
the ultrapure water spray head is used for spraying ultrapure water to the front surface of the silicon wafer, and the main function of the ultrapure water is to remove residual liquid medicine on the surface of the silicon wafer and avoid the residual liquid medicine from affecting the quality of the silicon wafer.
In some embodiments, the second spray head comprises at least one of:
the hydrogen fluoride spray nozzle is used for spraying hydrogen fluoride liquid medicine to the back surface of the silicon wafer, the main function of the hydrogen fluoride liquid medicine is to remove an oxide film on the surface of the silicon wafer, and in the process of removing the oxide film, metal elements wrapped in the oxide film are removed along with the removal of the oxide film, so that the function of removing metal impurities on the back surface of the silicon wafer is achieved;
the ozone water spray nozzle is used for spraying ozone water to the back surface of the silicon wafer, and has the main functions of removing organic matters and particles on the surface of the silicon wafer and oxidizing the surface of the silicon wafer, so that metal elements on the surface of the silicon wafer can be wrapped in an oxide film, and the oxide film can be removed by using hydrogen fluoride liquid medicine in the follow-up process, so that the metal elements wrapped in the oxide film are removed;
the ultrapure water spray nozzle is used for spraying ultrapure water to the back surface of the silicon wafer, and the main function of the ultrapure water is to remove residual liquid medicine on the surface of the silicon wafer and avoid the residual liquid medicine from affecting the quality of the silicon wafer.
In this embodiment, the silicon wafer 02 is fixed by the rotary fixing structure 01, and in the cleaning process, the rotary fixing structure 01 drives the silicon wafer 02 to be in a rotary state, so that cleaning liquid ejected by the first cleaning nozzle and the second spraying nozzle can reach each position of the front surface and the back surface of the silicon wafer, and impurities such as particles on the front surface and the back surface of the silicon wafer are removed.
In this embodiment, if the rotation speed of the rotation fixing structure 01 is too fast, there is not enough time for the cleaning liquid to effectively clean the silicon wafer 02, and if the rotation speed is too slow, the cleaning efficiency is affected, preferably, the rotation speed of the rotation fixing structure 01 is 100-2000rpm, so that the cleaning liquid can effectively clean the silicon wafer 02, and the cleaning efficiency is ensured.
In some embodiments, the angle between the second spray nozzle 04 and the horizontal plane is adjustable. The direction of the spray heads of the second spray type spray heads 04 and the horizontal plane can have the same included angle, so that the distance between the second spray type spray heads 04 is convenient to control, the distance between the second spray type spray heads 04 is the same, and the cleaning force of the silicon wafers is the same.
In some embodiments, the included angle between the second spray nozzle 04 and the horizontal plane is between 45 degrees and 60 degrees. The second spray type spray nozzle 04 is inclined towards the center of the silicon wafer, namely, the center direction of the silicon wafer, and an included angle between the second spray type spray nozzle 04 and the horizontal plane is between 45 degrees and 60 degrees. For example, the included angle between the second spray nozzle 04 and the horizontal plane may be 45 degrees, 50 degrees, 55 degrees, 60 degrees. That is, the second spray nozzle 04 may be inclined inwardly at an angle of between 30 degrees and 45 degrees. Therefore, the generation of turbulent flow can be avoided, and the cleaning effect is optimized.
The second spray head may be implemented in a variety of ways in this embodiment. In some embodiments, the spray head of the second spray-type spray head 04 includes a plurality of spray holes and a baffle plate corresponding to the spray holes, and the opening degree of the spray holes can be adjusted by moving the baffle plate, so as to adjust the atomization degree of the cleaning liquid sprayed by the second spray-type spray head 04.
In some embodiments, the second spray nozzle 04 includes:
an air duct;
the atomization main body is cylindrical, the inner space of the atomization main body is an airflow channel, the airflow channel is provided with an airflow outlet and an airflow inlet, the airflow inlet is communicated with the air duct, the atomization main body is provided with a liquid supply channel, the liquid supply channel is communicated with the airflow channel, liquid in the airflow channel is atomized by airflow and the atomized fluid is blown out from the airflow outlet.
According to the embodiment, the air flow channel and the liquid supply channel are arranged on the cylindrical atomization main body, so that the cleaning liquid medicine can be atomized by utilizing the impact between the air flow and the liquid, the atomization degree of the cleaning liquid medicine can be controlled by utilizing the air flow speed and the liquid flow speed, and the adjustable and controllable atomization degree of the cleaning liquid medicine can be realized.
In some embodiments, the silicon wafer cleaning apparatus further comprises:
the upper hairbrush is used for cleaning the front surface of the silicon wafer when the first cleaning structure sprays cleaning liquid medicine to the front surface of the silicon wafer, and the cleaning effect on the front surface of the silicon wafer can be ensured through the mutual matching of the upper hairbrush and the first cleaning structure;
the lower hairbrush is used for cleaning the back surface of the silicon wafer when the second cleaning structure sprays cleaning liquid medicine to the back surface of the silicon wafer, and the cleaning effect on the back surface of the silicon wafer can be ensured by the mutual matching of the lower hairbrush and the second cleaning structure.
In some embodiments, the silicon wafer cleaning apparatus further comprises:
and the nitrogen spray head is used for spraying nitrogen to the surface of the cleaned silicon wafer so as to dry the silicon wafer. The nitrogen mainly acts to dry the surface and the edge of the silicon wafer and dry the silicon wafer. The nitrogen gas spray head can be arranged above and/or below the silicon wafer, and the nitrogen gas spray head can be outside the projection range of the silicon wafer so as to dry the center and the edge of the silicon wafer. The nitrogen nozzle is connected with the nitrogen supply mechanism.
The embodiment of the invention also provides a silicon wafer cleaning method, which comprises the following steps:
providing the silicon wafer cleaning equipment, and fixing the silicon wafer on the rotary fixing structure;
and controlling the rotation fixing structure to bear the rotation of the silicon wafer, and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer.
In this embodiment, when cleaning the silicon wafer, design the nozzle below the silicon wafer into the second spray type shower nozzle, the cleaning solution that jets out from the second spray type shower nozzle is atomizing form, and the area of contact of atomizing form cleaning solution and the silicon wafer back is bigger to can remain at the silicon wafer back for a longer time, can effectively improve the cleaning performance to the silicon wafer back, and then improve the yield and the quality of silicon wafer.
Specifically, the silicon wafer cleaning method of the embodiment includes the following steps:
step 1, after chemical mechanical polishing is carried out on a silicon wafer, the silicon wafer is conveyed to a cleaning area, the silicon wafer is clamped by utilizing a rotary fixing structure, the rotation speed of the silicon wafer is set to be 1000-2000rpm, an ozone water spray head and an ozone water spray head are simultaneously opened, ozone water is respectively sprayed to the front side and the back side of the silicon wafer, the spraying time can be 10-15s, and the concentration of the ozone water can be 10-30ppm;
the ozone water has the main functions of removing organic matters and particles on the surface of the silicon wafer and oxidizing the surface of the silicon wafer, so that metal elements on the surface of the silicon wafer can be wrapped in an oxide film, and then the oxide film can be removed by using hydrogen fluoride liquid medicine, so that the metal elements wrapped in the oxide film can be removed;
step 2, setting the rotation speed of the silicon wafer to be 100-300rpm, opening a hydrogen fluoride liquid medicine spray head and a hydrogen fluoride spray type spray head, and respectively spraying the hydrogen fluoride liquid medicine to the front surface and the back surface of the silicon wafer, wherein the concentration of the hydrogen fluoride liquid medicine can be 1-3%, and the spraying time can be 5-10s;
the main function of the hydrogen fluoride liquid medicine is to remove the oxide film on the surface of the silicon wafer, and in the process of removing the oxide film, the metal elements wrapped in the oxide film and the particles on the surface of the oxide film are removed along with the removal of the oxide film, so that the function of removing the metal impurities on the surface of the silicon wafer is achieved;
the steps 1-2 are repeated for three times, so that metal impurities and particles on the back and front sides of the silicon wafer can be effectively removed;
step 3, setting the rotation speed of the silicon wafer to be 400-800rpm, and simultaneously opening an ultrapure water spray nozzle and an ultrapure water spray nozzle to spray ultrapure water to the front surface and the back surface of the silicon wafer respectively, wherein the spraying time can be 10-15s; the main function of the ultrapure water is to remove the residual liquid medicine and particulate matters on the surface of the silicon wafer, so as to avoid the influence of the residual liquid medicine and the particulate matters on the quality of the silicon wafer;
the front surface of the silicon wafer can be cleaned by using the upper hairbrush while the ultrapure water is sprayed to the front surface of the silicon wafer, and the cleaning effect of the front surface of the silicon wafer can be improved by using the upper hairbrush; the back surface of the silicon wafer can be cleaned by using the lower hairbrush while the ultrapure water is sprayed to the back surface of the silicon wafer, and the cleaning effect on the back surface of the silicon wafer can be improved by using the lower hairbrush.
And 4, setting the rotation speed of the silicon wafer to be 1000-2000rpm, and simultaneously opening a nitrogen spray head, wherein the nitrogen mainly acts to dry the surface and the edge of the silicon wafer by drying the water of the silicon wafer.
After the silicon wafer is dried, the silicon wafer cleaning equipment can withdraw from the silicon wafer to finish cleaning.
In this embodiment, the silicon wafer 02 is fixed by the rotary fixing structure 01, and in the cleaning process, the rotary fixing structure 01 drives the silicon wafer 02 to be in a rotary state, so that cleaning liquid ejected by the first cleaning nozzle and the second spraying nozzle can reach each position of the front surface and the back surface of the silicon wafer, and impurities such as particles on the front surface and the back surface of the silicon wafer are removed.
In the process of cleaning the silicon wafer 02, the included angle between the second spray nozzle 04 and the horizontal plane can be adjusted. The direction of the spray heads of the second spray type spray heads 04 and the horizontal plane can have the same included angle, so that the distance between the second spray type spray heads 04 is convenient to control, the distance between the second spray type spray heads 04 is the same, and the cleaning force of the silicon wafers is the same.
In some embodiments, the included angle between the second spray nozzle 04 and the horizontal plane is between 45 degrees and 60 degrees. The second spray type spray nozzle 04 is inclined towards the center of the silicon wafer, namely, the center direction of the silicon wafer, and an included angle between the second spray type spray nozzle 04 and the horizontal plane is between 45 degrees and 60 degrees. For example, the included angle between the second spray nozzle 04 and the horizontal plane may be 45 degrees, 50 degrees, 55 degrees, 60 degrees. That is, the second spray nozzle 04 may be inclined inwardly at an angle of between 30 degrees and 45 degrees. Therefore, the generation of turbulent flow can be avoided, and the cleaning effect is optimized.
In the cleaning process, the atomization degree of the cleaning liquid medicine can be adjusted according to the requirement, in some embodiments, the spray heads of the second spray type spray heads 04 comprise a plurality of spray holes and baffles corresponding to the spray holes, and the opening degree of the spray holes can be adjusted by moving the baffles, so that the atomization degree of the cleaning liquid medicine sprayed out of the second spray type spray heads 04 is adjusted.
In some embodiments, the second spray nozzle 04 includes: an air duct; the atomization main body is cylindrical, the inner space of the atomization main body is an airflow channel, the airflow channel is provided with an airflow outlet and an airflow inlet, the airflow inlet is communicated with the air duct, the atomization main body is provided with a liquid supply channel, the liquid supply channel is communicated with the airflow channel, liquid in the airflow channel is atomized by airflow and the atomized fluid is blown out from the airflow outlet. The atomization degree of the cleaning liquid medicine can be controlled by utilizing the airflow velocity and the liquid flow velocity, so that the atomization degree of the cleaning liquid medicine sprayed out by the second spray type spray nozzle 04 is adjusted.
In this specification, all embodiments are described in a progressive manner, and identical and similar parts of the embodiments are all referred to each other, and each embodiment is mainly described in a different way from other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is relatively simple, and the relevant points are found in the section of the product embodiments.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the description of the above embodiments, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A silicon wafer cleaning apparatus, comprising:
the rotary fixing structure is used for bearing the silicon wafer and driving the silicon wafer to rotate on a horizontal plane;
the first cleaning structure is arranged right above the rotary fixing structure and comprises at least one first cleaning spray head and a first cleaning liquid supply structure communicated with the first cleaning spray head, and the first cleaning spray head is used for spraying cleaning liquid to the front surface of the silicon wafer so as to clean the front surface of the silicon wafer;
the second cleaning structure is arranged right below the rotary fixing structure and comprises at least one second spray type spray head and a second cleaning liquid supply structure communicated with the second spray type spray head, and the second spray type spray head is used for spraying the cleaning liquid to the back of the silicon wafer so as to clean the back of the silicon wafer.
2. The silicon wafer cleaning apparatus of claim 1, wherein the first cleaning showerhead comprises at least one of:
the hydrogen fluoride liquid medicine spray head is used for spraying the hydrogen fluoride liquid medicine to the front surface of the silicon wafer;
the ozone water spray head is used for spraying ozone water to the front surface of the silicon wafer;
and the ultrapure water spray head is used for spraying ultrapure water to the front surface of the silicon wafer.
3. The silicon wafer cleaning apparatus of claim 1, wherein the second spray head comprises at least one of:
the hydrogen fluoride spray nozzle is used for spraying hydrogen fluoride liquid medicine to the back surface of the silicon wafer;
the ozone water spray nozzle is used for spraying ozone water to the back surface of the silicon wafer;
and the ultrapure water spray nozzle is used for spraying ultrapure water to the back surface of the silicon wafer.
4. The silicon wafer cleaning apparatus of claim 1, wherein the angle between the second spray nozzle and the horizontal is adjustable.
5. The silicon wafer cleaning apparatus according to claim 4, wherein the included angle between the second spray nozzle and the horizontal plane is between 45 degrees and 60 degrees.
6. The silicon wafer cleaning apparatus according to claim 1, wherein the nozzle of the second spray nozzle comprises a plurality of nozzle holes and a shutter corresponding to the nozzle holes, and the opening degree of the nozzle holes can be adjusted by moving the shutter.
7. The silicon wafer cleaning apparatus according to claim 1, wherein the second spray nozzle comprises:
an air duct;
the atomization main body is cylindrical, the inner space of the atomization main body is an airflow channel, the airflow channel is provided with an airflow outlet and an airflow inlet, the airflow inlet is communicated with the air duct, the atomization main body is provided with a liquid supply channel, the liquid supply channel is communicated with the airflow channel, liquid in the airflow channel is atomized by airflow and the atomized fluid is blown out from the airflow outlet.
8. The silicon wafer cleaning apparatus according to any one of claims 1 to 7, further comprising:
the upper brush is used for cleaning the front surface of the silicon wafer when the first cleaning structure sprays cleaning liquid medicine to the front surface of the silicon wafer;
and the lower brush is used for cleaning the back surface of the silicon wafer when the second cleaning structure sprays cleaning liquid medicine to the back surface of the silicon wafer.
9. The silicon wafer cleaning apparatus according to any one of claims 1 to 7, further comprising:
and the nitrogen spray head is used for spraying nitrogen to the surface of the cleaned silicon wafer so as to dry the silicon wafer.
10. The silicon wafer cleaning method is characterized by comprising the following steps:
providing a silicon wafer cleaning apparatus according to any one of claims 1-9, fixing a silicon wafer on the rotary fixing structure;
and controlling the rotation fixing structure to bear the rotation of the silicon wafer, and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer.
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| CN202311605017.5A CN117542762A (en) | 2023-11-28 | 2023-11-28 | Silicon wafer cleaning method and silicon wafer cleaning equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117878026A (en) * | 2024-03-12 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | Silicon wafer cleaning equipment and silicon wafer cleaning method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117878026A (en) * | 2024-03-12 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | Silicon wafer cleaning equipment and silicon wafer cleaning method |
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