CN115763318A - Silicon wafer cleaning method and equipment - Google Patents

Silicon wafer cleaning method and equipment Download PDF

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Publication number
CN115763318A
CN115763318A CN202211522678.7A CN202211522678A CN115763318A CN 115763318 A CN115763318 A CN 115763318A CN 202211522678 A CN202211522678 A CN 202211522678A CN 115763318 A CN115763318 A CN 115763318A
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China
Prior art keywords
silicon wafer
cleaning
spray head
liquid medicine
controlling
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CN202211522678.7A
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Chinese (zh)
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李亮亮
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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Application filed by Xian Eswin Silicon Wafer Technology Co Ltd, Xian Eswin Material Technology Co Ltd filed Critical Xian Eswin Silicon Wafer Technology Co Ltd
Priority to CN202211522678.7A priority Critical patent/CN115763318A/en
Priority to TW111150307A priority patent/TW202324576A/en
Publication of CN115763318A publication Critical patent/CN115763318A/en
Pending legal-status Critical Current

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention provides a silicon wafer cleaning method and equipment, and belongs to the technical field of semiconductor manufacturing. Silicon wafer cleaning equipment includes: the rotary fixing structure is used for bearing the silicon wafer and driving the silicon wafer to rotate on a horizontal plane; the first cleaning structure comprises a first cleaning spray head and a first cleaning liquid medicine supply structure and is used for spraying cleaning liquid medicine to the central area of the silicon wafer so as to clean the central area of the silicon wafer; the second cleaning structure is arranged at the edge of the rotary fixing structure and comprises at least one second cleaning spray head and a second cleaning liquid medicine supply structure communicated with the second cleaning spray head, and the second cleaning structure is used for spraying cleaning liquid medicine to the edge of the silicon wafer so as to clean the edge of the silicon wafer; and the control structure is respectively connected with the rotary fixing structure, the first cleaning structure and the second cleaning structure and used for controlling the rotating speed of the rotary fixing structure and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer in different time periods. The technical scheme of the invention can remove the metal impurities on the edge of the silicon wafer.

Description

Silicon wafer cleaning method and equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a silicon wafer cleaning method and silicon wafer cleaning equipment.
Background
In the process of manufacturing the silicon wafer, metal pollution is introduced into almost every process section, so that metal ion impurities and/or metal atom impurities appear on the surface of the silicon wafer, the metal ion impurities and/or the metal atom impurities diffuse to the edge of the silicon wafer through contact, and under the action of high temperature, the metal ion impurities and/or the metal atom impurities accelerate to diffuse into the silicon wafer, so that the metal content of the silicon wafer is increased, the metal ion impurities and/or the metal atom impurities diffuse to an active region of a device in the subsequent process, and the performance and the yield of the device are greatly damaged.
Disclosure of Invention
In order to solve the technical problem, the invention provides a silicon wafer cleaning method and a silicon wafer cleaning device, which can remove metal impurities on the edge of a silicon wafer.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that:
a silicon wafer cleaning apparatus comprising:
the rotating and fixing structure is used for bearing a silicon wafer and driving the silicon wafer to rotate on a horizontal plane;
the first cleaning structure is arranged right above the rotary fixing structure, comprises at least one first cleaning spray head and a first cleaning liquid medicine providing structure communicated with the first cleaning spray head, and is used for spraying cleaning liquid medicine to the central area of the silicon wafer so as to clean the central area of the silicon wafer;
the second cleaning structure is arranged at the edge of the rotary fixing structure, comprises at least one second cleaning spray head and a second cleaning liquid medicine supply structure communicated with the second cleaning spray head, and is used for spraying cleaning liquid medicine to the edge of the silicon wafer so as to clean the edge of the silicon wafer;
and the control structure is respectively connected with the rotary fixing structure, the first cleaning structure and the second cleaning structure and is used for controlling the rotating speed of the rotary fixing structure and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer at different time periods.
In some embodiments, the first cleaning structure comprises:
the first hydrogen fluoride liquid medicine spray head is used for spraying hydrogen fluoride liquid medicine to the central area of the silicon wafer;
a first ozone water spray head for spraying ozone water to the central region of the silicon wafer;
a first ultra-pure water spray head for spraying ultra-pure water toward the central region of the silicon wafer.
In some embodiments, the second cleaning structure comprises:
the second hydrogen fluoride liquid medicine spray head is used for spraying hydrogen fluoride liquid medicine to the edge of the silicon wafer;
the second ozone water spray head is used for spraying ozone water to the edge of the silicon wafer;
and the second ultrapure water spray head is used for spraying ultrapure water to the edge of the silicon wafer.
In some embodiments, the at least one second cleaning spray head has the same included angle with a horizontal plane, and each second cleaning spray head has the same shortest distance with the upper surface of the silicon wafer.
In some embodiments, the second cleaning spray head is inclined towards the center of the silicon wafer, and the included angle between the second cleaning spray head and the horizontal plane is between 45 and 60 degrees.
In some embodiments, the second cleaning showerhead furthest from the center of the silicon wafer is outside the projection range of the silicon wafer.
In some embodiments, the rotating fixture rotates at a speed of 100-2000rpm.
In some embodiments, the silicon wafer cleaning apparatus further comprises:
and the nitrogen spray head is used for spraying nitrogen to the surface of the cleaned silicon wafer so as to dry the silicon wafer.
The embodiment of the invention also provides a silicon wafer cleaning method, which comprises the following steps:
providing the silicon wafer cleaning equipment, and fixing the silicon wafer on the rotary fixing structure;
controlling the rotation fixing structure to bear the silicon wafer to rotate, and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer at different time periods
In some embodiments, the method specifically comprises:
controlling the rotating speed of the rotary fixed structure to be 1000-2000rpm, and controlling the first ozone water spray head to spray ozone water to the central area of the silicon wafer;
controlling the rotating speed of the rotary fixing structure to be 100-300rpm, and controlling the first hydrogen fluoride liquid medicine spray head to spray hydrogen fluoride liquid medicine to the central area of the silicon wafer;
controlling the rotating speed of the rotary fixing structure to be 1000-2000rpm, and controlling the second ozone water spray head to spray ozone water to the edge of the silicon wafer;
controlling the rotating speed of the rotary fixing structure to be 100-300rpm, and controlling the second hydrogen fluoride liquid medicine spray head to spray hydrogen fluoride liquid medicine to the edge of the silicon wafer;
controlling the rotating speed of the rotating and fixing structure to be 400-800rpm, and controlling the first ultrapure water spray head to spray ultrapure water to the central area of the silicon wafer;
and controlling the rotating speed of the rotating and fixing structure to be 400-800rpm, and controlling the second ultrapure water spray head to spray ultrapure water to the edge of the silicon wafer.
The invention has the beneficial effects that:
in this embodiment, the silicon wafer cleaning equipment comprises a first cleaning structure and a second cleaning structure, the first cleaning structure can clean the central area of the silicon wafer, and the second cleaning structure can clean the edge of the silicon wafer, so that the metal impurities at the edge of the silicon wafer can be removed through the second cleaning structure, the metal impurities at the edge of the silicon wafer are prevented from diffusing into the silicon wafer in the subsequent process, and the yield of the silicon wafer is improved.
Drawings
FIG. 1 is a schematic view showing the construction of a silicon wafer cleaning apparatus according to the related art;
FIG. 2 is a schematic view showing a silicon wafer cleaning apparatus according to the related art;
FIG. 3 is a schematic structural diagram of a silicon wafer cleaning apparatus according to an embodiment of the present invention.
Reference numerals
1. Silicon wafer
2. First hydrogen fluoride liquid spray head
3. First ozone water spray head
4. First ultrapure water spray head
5. Third ozone water spray head
6. Nitrogen gas shower nozzle
7 second hydrogen fluoride liquid medicine spray head
8. Second ozone water spray head
9. Second ultrapure water spray head
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the related art, as shown in fig. 1, the silicon wafer cleaning apparatus includes a first hydrogen fluoride liquid spray head 2, a first ozone water spray head 3 and a first ultrapure water spray head 4 which are arranged right above a silicon wafer 1, as shown in fig. 2, when the silicon wafer 1 is cleaned by the silicon wafer cleaning apparatus, the cleaning liquid is thrown off the surface of the silicon wafer 1 along the radius direction under the action of centrifugal force when the silicon wafer 1 is in a high-speed rotation process, wherein a dotted line represents a traveling path of the cleaning liquid, and it can be seen that when the silicon wafer is cleaned by the silicon wafer cleaning apparatus, the contact between the cleaning liquid and the edge of the silicon wafer 1 is small, and metal impurities at the edge of the silicon wafer 1 cannot be effectively removed.
The invention provides a silicon wafer cleaning method and equipment, which can remove metal impurities on the edge of a silicon wafer.
The embodiment of the invention provides silicon wafer cleaning equipment, which comprises:
the rotating and fixing structure is used for bearing a silicon wafer and driving the silicon wafer to rotate on a horizontal plane;
the first cleaning structure is arranged right above the rotary fixing structure, comprises at least one first cleaning spray head and a first cleaning liquid medicine providing structure communicated with the first cleaning spray head, and is used for spraying cleaning liquid medicine to the central area of the silicon wafer so as to clean the central area of the silicon wafer;
the second cleaning structure is arranged at the edge of the rotary fixing structure, comprises at least one second cleaning spray head and a second cleaning liquid medicine supply structure communicated with the second cleaning spray head, and is used for spraying cleaning liquid medicine to the edge of the silicon wafer so as to clean the edge of the silicon wafer;
and the control structure is respectively connected with the rotary fixing structure, the first cleaning structure and the second cleaning structure and is used for controlling the rotating speed of the rotary fixing structure and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer at different time periods.
In this embodiment, the silicon wafer cleaning equipment comprises a first cleaning structure and a second cleaning structure, the first cleaning structure can clean the central area of the silicon wafer, and the second cleaning structure can clean the edge of the silicon wafer, so that the metal impurities at the edge of the silicon wafer can be removed through the second cleaning structure, the metal impurities at the edge of the silicon wafer are prevented from diffusing into the silicon wafer in the subsequent process, and the yield of the silicon wafer is improved.
In some embodiments, as shown in fig. 3, the first cleaning structure comprises:
the first hydrogen fluoride liquid medicine spray head 2 is used for spraying hydrogen fluoride liquid medicine to the central area of the silicon wafer, the hydrogen fluoride liquid medicine mainly has the effect of removing an oxidation film on the surface of the silicon wafer 1, and in the process of removing the oxidation film, metal elements wrapped in the oxidation film are removed along with the removal of the oxidation film, so that the effect of removing metal impurities in the central area of the silicon wafer is achieved;
the first ozone water spray head 3 is used for spraying ozone water to the central area of the silicon wafer, and the ozone water mainly has the functions of removing organic matters and particles on the surface of the silicon wafer and oxidizing the surface of the silicon wafer so that metal elements on the surface of the silicon wafer can be wrapped in an oxidation film, and thus, the oxidation film can be removed by using hydrogen fluoride liquid medicine subsequently, and the metal elements wrapped in the oxidation film can be removed;
the first ultrapure water spray head 4 is used for spraying ultrapure water to the central area of the silicon wafer, and the ultrapure water mainly has the function of removing residual liquid medicine on the surface of the silicon wafer and avoiding the residual liquid medicine from influencing the quality of the silicon wafer.
The silicon wafer is fixed through the rotary fixing structure, and in the cleaning process, the rotary fixing structure drives the silicon wafer to be in a rotary state, so that cleaning liquid medicine sprayed out of the first cleaning spray head can reach all positions of the central area of the silicon wafer, and metal elements in the central area of the silicon wafer are removed. The cleaning liquid medicine is in a liquid column flow type when leaving the spray head, can be called as jet flow, has certain impact force, and can wash away organic matters, particles and metal elements in the central area of the silicon wafer after contacting the central area of the silicon wafer, so the cleaning liquid medicine can be used for cleaning the central area of the silicon wafer.
In some embodiments, as shown in fig. 3, the second cleaning structure comprises:
the second hydrogen fluoride liquid medicine spray head 7 is used for spraying hydrogen fluoride liquid medicine to the edge of the silicon wafer, the hydrogen fluoride liquid medicine mainly has the function of removing an oxidation film on the surface of the silicon wafer 1, and in the process of removing the oxidation film, metal elements wrapped in the oxidation film are removed along with the removal of the oxidation film, so that the function of removing metal impurities on the edge of the silicon wafer is achieved;
the second ozone water spray head 8 is used for spraying ozone water to the edge of the silicon wafer, and the ozone water mainly has the functions of removing organic matters and particles on the surface of the silicon wafer and oxidizing the surface of the silicon wafer so that metal elements on the surface of the silicon wafer can be wrapped in an oxidation film, and thus the oxidation film can be removed by using hydrogen fluoride liquid medicine subsequently, and the metal elements wrapped in the oxidation film can be removed;
and the second ultrapure water spray head 9 is used for spraying ultrapure water to the edge of the silicon wafer, and the ultrapure water has the main function of removing residual liquid medicine on the surface of the silicon wafer and avoiding the residual liquid medicine from influencing the quality of the silicon wafer.
The silicon wafer is fixed through the rotary fixing structure, the rotary fixing structure drives the silicon wafer to be in a rotary state in the cleaning process, and therefore the cleaning liquid medicine sprayed by the second cleaning spray head can reach all positions of the edge of the silicon wafer to remove metal elements on the edge of the silicon wafer. The cleaning liquid medicine is in a liquid column flow type when leaving the spray head, can be called as jet flow, has certain impact force, and can wash away organic matters, particles and metal elements at the edge of the silicon wafer after contacting with the edge of the silicon wafer, so the cleaning liquid medicine can be used for cleaning the edge of the silicon wafer.
In some embodiments, as shown in fig. 3, the at least one second cleaning showerhead has the same included angle with the horizontal plane, i.e., the orientation of each second cleaning showerhead is the same, and each second cleaning showerhead has the same shortest distance with the upper surface of the silicon wafer, wherein the shortest distance is the vertical distance between the lowest point of the second cleaning showerhead and the upper surface of the silicon wafer.
The direction of each second cleaning spray head and the horizontal plane have the same included angle, so that the distance between the second cleaning spray heads is convenient to control, and the distances between the second cleaning spray heads are the same, so that the silicon wafer is cleaned with the same force.
In addition, the same distance is reserved between each second cleaning spray head and the lower surface of the silicon wafer, so that the silicon wafer is cleaned with the same force.
In some embodiments, the second cleaning nozzle is inclined toward the center of the silicon wafer, that is, toward the center of the silicon wafer, and an included angle between the second cleaning nozzle and the horizontal plane is between 45 degrees and 60 degrees. For example, the angle between the second cleaning nozzle and the horizontal plane may be 45 degrees, 50 degrees, 55 degrees, or 60 degrees. That is, the second cleaning nozzle may be inclined inward at an angle of 30 to 45 degrees. This prevents the generation of turbulence, thereby optimizing the cleaning effect.
In some embodiments, the second cleaning nozzle farthest from the center of the silicon wafer is outside the projection range of the silicon wafer, and the second cleaning nozzle may be obliquely disposed, so that the cleaning solution sprayed by the second cleaning nozzle reaches the edge of the silicon wafer, so as to effectively clean the edge of the silicon wafer.
In some embodiments, as shown in fig. 3, the silicon wafer cleaning apparatus further comprises: the third ozone water spray head 5 is arranged at the 1/2 position of the radius of the silicon wafer, ozone water can be sprayed on the silicon wafer at the position, the main effect of the ozone water is to remove organic matters and particles on the surface of the silicon wafer and oxidize the surface of the silicon wafer, so that metal elements on the surface of the silicon wafer can be wrapped in an oxidation film, the oxidation film can be removed by utilizing hydrogen fluoride liquid subsequently, and then the metal elements wrapped in the oxidation film are removed.
In this embodiment, if the rotation speed of the rotating and fixing structure is too fast, there is not enough time for the cleaning solution to effectively clean the silicon wafer, and if the rotation speed is too slow, the cleaning efficiency will be affected, preferably, the rotation speed of the rotating and fixing structure is 100-2000rpm, so that the cleaning solution can effectively clean the silicon wafer, and the cleaning efficiency is ensured.
In some embodiments, as shown in fig. 3, the silicon wafer cleaning apparatus further includes:
and the nitrogen spray head 6 is used for spraying nitrogen to the surface of the cleaned silicon wafer so as to dry the silicon wafer. The nitrogen mainly has the function of drying the moisture on the surface and the edge of the silicon wafer and drying the silicon wafer. The nitrogen shower 6 may be disposed above the silicon wafer, and the nitrogen shower 6 may be outside a projection range of the silicon wafer to dry the center and the edge of the silicon wafer. The nitrogen gas shower head 6 is connected with a nitrogen gas supply mechanism.
The embodiment of the invention also provides a silicon wafer cleaning method, which comprises the following steps:
providing the silicon wafer cleaning equipment, and fixing the silicon wafer on the rotary fixing structure;
and controlling the rotating and fixing structure to bear the silicon wafer to rotate, and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer at different time periods.
In this embodiment, the silicon wafer cleaning equipment comprises a first cleaning structure and a second cleaning structure, the first cleaning structure can clean the central area of the silicon wafer, and the second cleaning structure can clean the edge of the silicon wafer, so that the metal impurities at the edge of the silicon wafer can be removed through the second cleaning structure, the metal impurities at the edge of the silicon wafer are prevented from diffusing into the silicon wafer in the subsequent process, and the yield of the silicon wafer is improved.
In order to avoid mutual influence on cleaning of the central area of the silicon wafer and cleaning of the edge of the silicon wafer, cleaning liquid medicine sprayed by the spray head is disturbed to influence the cleaning effect; the first cleaning structure and the second cleaning structure clean the silicon wafer at different time periods. The central area of the silicon wafer can be cleaned by utilizing the first cleaning structure, and then the edge of the silicon wafer is cleaned by utilizing the second cleaning structure; or, the edge of the silicon wafer is cleaned by the second cleaning structure, and then the central area of the silicon wafer is cleaned by the first cleaning structure.
In a specific embodiment, the method specifically includes the steps of:
1. conveying the silicon wafer to a cleaning area, clamping the silicon wafer 1 by using a rotary fixing structure, setting the rotation speed of the silicon wafer 1 to be 1000-2000rpm, simultaneously opening a first ozone water spray head 3, and spraying ozone water to the central area of the silicon wafer 1 for 10-15s, wherein the concentration of the ozone water can be 10-30ppm; the ozone water has the main functions of removing organic matters and particles on the surface of the silicon wafer and oxidizing the surface of the silicon wafer, so that metal elements on the surface of the silicon wafer can be wrapped in the oxide film, the oxide film can be removed by using the hydrogen fluoride liquid medicine subsequently, and the metal elements wrapped in the oxide film can be removed;
2. opening a third ozone water spray head 5, and spraying ozone water to the 1/2 position of the radius of the silicon wafer, wherein the spraying time is 5-10s, and the concentration of the ozone water can be 10-30ppm;
3. setting the rotation speed of the silicon wafer 1 to be 100-300rpm, opening the first hydrogen fluoride liquid medicine spray head 2, and spraying hydrogen fluoride liquid medicine to the central area of the silicon wafer, wherein the concentration of the hydrogen fluoride liquid medicine can be 1-3%, and the spraying time is 5-10s; the hydrogen fluoride liquid medicine has the main function of removing an oxide film on the surface of the silicon wafer 1, and in the process of removing the oxide film, metal elements wrapped in the oxide film are removed along with the removal of the oxide film, so that the function of removing metal impurities in the central area of the silicon wafer is achieved;
4. opening a third ozone water spray head 5, and spraying ozone water to the 1/2 position of the radius of the silicon wafer, wherein the spraying time is 5-10s, and the concentration of the ozone water can be 10-30ppm;
5. setting the rotation speed of the silicon wafer 1 to be 1000-2000rpm, simultaneously opening a second ozone water spray head 8, and spraying ozone water to the edge of the silicon wafer, wherein the spraying time is 5-10s, and the concentration of the ozone water can be 10-30ppm; the ozone water has the main functions of removing organic matters and particles on the surface of the silicon wafer and oxidizing the surface of the silicon wafer to enable metal elements on the surface of the silicon wafer to be wrapped in the oxidation film, so that the oxidation film can be removed by utilizing hydrogen fluoride liquid medicine subsequently, and the metal elements wrapped in the oxidation film can be removed;
6. setting the rotation speed of the silicon wafer 1 to be 100-300rpm, simultaneously opening a second hydrogen fluoride liquid medicine spray head 7, and spraying hydrogen fluoride liquid medicine to the edge of the silicon wafer, wherein the concentration of the hydrogen fluoride liquid medicine can be 1-3%, and the spraying time can be 3-6s; the hydrogen fluoride liquid medicine mainly has the main function of removing an oxide film on the surface of the silicon wafer 1, and in the process of removing the oxide film, metal elements wrapped in the oxide film are removed along with the removal of the oxide film, so that the function of removing metal impurities on the edge of the silicon wafer is achieved;
7. repeating the steps 1-6 times, so that metal impurities in the central area and the edge of the silicon wafer can be effectively removed;
8. setting the rotation speed of the silicon wafer 1 to be 400-800rpm, simultaneously turning on a second ultrapure water spray head 9, and spraying ultrapure water to the edge of the silicon wafer, wherein the spraying time can be 10-15s; the ultrapure water has the main function of removing residual liquid medicine on the surface of the silicon wafer, so that the influence of the residual liquid medicine on the quality of the silicon wafer is avoided;
9. setting the rotation speed of the silicon wafer 1 to be 400-800rpm, simultaneously turning on a first ultrapure water spray head 4, and spraying ultrapure water to the central area of the silicon wafer, wherein the spraying time can be 15-30s; the ultrapure water has the main function of removing residual liquid medicine on the surface of the silicon wafer, so that the influence of the residual liquid medicine on the quality of the silicon wafer is avoided;
10. the rotation speed of the silicon wafer 1 is set to 1000-2000rpm, and the nitrogen gas shower head 6 is opened at the same time, and the spraying time is set to 10-20s. The nitrogen mainly has the function of drying the moisture on the surface and the edge of the silicon wafer and drying the silicon wafer.
After the silicon wafer 1 is dried, the silicon wafer cleaning equipment can be withdrawn from the silicon wafer to complete cleaning.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is simple, and the relevant points can be referred to the partial description of the product embodiments.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present disclosure, and shall cover the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims

Claims (10)

1. A silicon wafer cleaning apparatus, comprising:
the rotating and fixing structure is used for bearing a silicon wafer and driving the silicon wafer to rotate on a horizontal plane;
the first cleaning structure is arranged right above the rotary fixing structure, comprises at least one first cleaning spray head and a first cleaning liquid medicine providing structure communicated with the first cleaning spray head, and is used for spraying cleaning liquid medicine to the central area of the silicon wafer so as to clean the central area of the silicon wafer;
the second cleaning structure is arranged at the edge of the rotary fixing structure, comprises at least one second cleaning spray head and a second cleaning liquid medicine supply structure communicated with the second cleaning spray head, and is used for spraying cleaning liquid medicine to the edge of the silicon wafer so as to clean the edge of the silicon wafer;
and the control structure is respectively connected with the rotary fixing structure, the first cleaning structure and the second cleaning structure and is used for controlling the rotating speed of the rotary fixing structure and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer at different time periods.
2. The silicon wafer cleaning apparatus according to claim 1, wherein the first cleaning structure comprises:
the first hydrogen fluoride liquid medicine spray head is used for spraying hydrogen fluoride liquid medicine to the central area of the silicon wafer;
a first ozone water spray head for spraying ozone water to the central region of the silicon wafer;
a first ultra-pure water spray head for spraying ultra-pure water toward a central region of the silicon wafer.
3. The wafer cleaning apparatus according to claim 2, wherein the second cleaning structure comprises:
the second hydrogen fluoride liquid medicine spray head is used for spraying hydrogen fluoride liquid medicine to the edge of the silicon wafer;
the second ozone water spray head is used for spraying ozone water to the edge of the silicon wafer;
and the second ultrapure water spray head is used for spraying ultrapure water to the edge of the silicon wafer.
4. The wafer cleaning apparatus according to claim 1, wherein the at least one second cleaning showerhead has the same angle with a horizontal plane, and each second cleaning showerhead has the same shortest distance with the upper surface of the wafer.
5. The silicon wafer cleaning equipment as claimed in claim 4, wherein the second cleaning nozzle is inclined towards the center of the silicon wafer, and the included angle between the second cleaning nozzle and the horizontal plane is between 45 and 60 degrees.
6. The wafer cleaning apparatus according to claim 4, wherein the second cleaning showerhead most distant from the center of the wafer is outside the projection range of the wafer.
7. The silicon wafer cleaning apparatus according to claim 1, wherein the rotation speed of the rotating and fixing structure is 100 to 2000rpm.
8. The silicon wafer cleaning apparatus as claimed in claim 1, further comprising:
and the nitrogen spray head is used for spraying nitrogen to the surface of the cleaned silicon wafer so as to dry the silicon wafer.
9. A silicon wafer cleaning method is characterized by comprising the following steps:
providing the silicon wafer cleaning apparatus as defined in any one of claims 1 to 8, fixing the silicon wafer on the rotation fixing structure;
and controlling the rotating and fixing structure to bear the silicon wafer to rotate, and controlling the first cleaning structure and the second cleaning structure to clean the silicon wafer at different time periods.
10. The silicon wafer cleaning method according to claim 9, applied to the silicon wafer cleaning apparatus according to claim 3, the method specifically comprising:
controlling the rotating speed of the rotary fixing structure to be 1000-2000rpm, and controlling the first ozone water spray head to spray ozone water to the central area of the silicon wafer;
controlling the rotating speed of the rotary fixing structure to be 100-300rpm, and controlling the first hydrogen fluoride liquid medicine spray head to spray hydrogen fluoride liquid medicine to the central area of the silicon wafer;
controlling the rotating speed of the rotary fixing structure to be 1000-2000rpm, and controlling the second ozone water spray head to spray ozone water to the edge of the silicon wafer;
controlling the rotating speed of the rotary fixing structure to be 100-300rpm, and controlling the second hydrogen fluoride liquid medicine spray head to spray hydrogen fluoride liquid medicine to the edge of the silicon wafer;
controlling the rotating speed of the rotating and fixing structure to be 400-800rpm, and controlling the first ultrapure water spray head to spray ultrapure water to the central area of the silicon wafer;
and controlling the rotating speed of the rotating and fixing structure to be 400-800rpm, and controlling the second ultrapure water spray head to spray ultrapure water to the edge of the silicon wafer.
CN202211522678.7A 2022-11-30 2022-11-30 Silicon wafer cleaning method and equipment Pending CN115763318A (en)

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Application Number Priority Date Filing Date Title
CN202211522678.7A CN115763318A (en) 2022-11-30 2022-11-30 Silicon wafer cleaning method and equipment
TW111150307A TW202324576A (en) 2022-11-30 2022-12-28 Silicon wafer cleaning method and device

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Application Number Priority Date Filing Date Title
CN202211522678.7A CN115763318A (en) 2022-11-30 2022-11-30 Silicon wafer cleaning method and equipment

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CN115763318A true CN115763318A (en) 2023-03-07

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631849A (en) * 2023-07-21 2023-08-22 山东有研艾斯半导体材料有限公司 Silicon wafer cleaning method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631849A (en) * 2023-07-21 2023-08-22 山东有研艾斯半导体材料有限公司 Silicon wafer cleaning method
CN116631849B (en) * 2023-07-21 2024-05-07 山东有研艾斯半导体材料有限公司 Silicon wafer cleaning method

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