CN219457539U - Wafer cleaning equipment - Google Patents

Abstract

The utility model discloses wafer cleaning equipment, which comprises a carrying mechanism, a cleaning mechanism and a cleaning mechanism, wherein the carrying mechanism is used for carrying and rotating a wafer; the cleaning mechanism comprises a first cleaning component which is arranged on one side of the carrying mechanism and is used for cleaning the first surface of the wafer, and a second cleaning component which is arranged on the other side of the carrying mechanism and is used for cleaning the second surface of the wafer. Compared with the traditional single-side cleaning method, the first cleaning component and the second cleaning component of the wafer cleaning device can simultaneously clean two surfaces of a wafer under the assistance of the carrying mechanism, and the efficiency and the quality of wafer cleaning are remarkably improved.

Description

Wafer cleaning equipment

Technical Field

Embodiments of the present utility model relate to the field of semiconductor cleaning equipment. More particularly, the present utility model relates to a wafer cleaning apparatus.

Background

This section is intended to provide a background or context to the embodiments of the utility model that are recited in the claims. The description herein may include concepts that could be pursued, but are not necessarily ones that have been previously conceived or pursued. Accordingly, unless indicated otherwise, what is described in this section is not prior art to the description and claims in this application and is not admitted to be prior art by inclusion in this section.

In the field of semiconductor chip manufacturing, contaminants such as particles, organic residues, metal ions and the like deposited on the surface of a semiconductor wafer during processing determine the final yield of chips to a certain extent. Therefore, wafer cleaning is the most important and frequent process in the semiconductor manufacturing process, and the quality of the wafer cleaning is critical to the quality of the semiconductor chips. With the continuous development of semiconductor technology, the size of the semiconductor chip is gradually reduced, the structure is gradually complicated, the sensitivity of the chip to impurity content is also improved, and correspondingly, the surface quality requirement on the wafer is also more and more stringent.

At present, a single-sided wet cleaning process is generally used for removing contaminants on the surface of a wafer in the manufacture of a semiconductor wafer, namely, one side of the wafer is cleaned by using a cleaning agent, the other side of the wafer is cleaned by using the cleaning agent, and then the wafer is finely cleaned by using ultrapure water. However, the conventional single-sided cleaning method has low cleaning efficiency and insufficient cleaning capability, and needs repeated cleaning to achieve high cleanliness on the surface of the wafer, which seriously affects the production efficiency and the processing cost of wafer processing.

Therefore, it is desirable to provide a wafer cleaning apparatus for improving the cleaning quality and the cleaning efficiency of wafer cleaning.

Disclosure of Invention

To solve one or more of the technical problems mentioned above, the present utility model provides a wafer cleaning apparatus, comprising: the carrying mechanism is used for carrying and rotating the wafer; the cleaning mechanism comprises a first cleaning component and a second cleaning component, wherein the first cleaning component is arranged on one side of the carrying mechanism and used for cleaning the first surface of the wafer, and the second cleaning component is arranged on the other side of the carrying mechanism and used for cleaning the second surface of the wafer.

Through the wafer cleaning equipment provided by the utility model, the first cleaning component and the second cleaning component can simultaneously clean two surfaces of the wafer with the assistance of the carrying mechanism, so that the wafer cleaning efficiency is remarkably improved. Compared with the traditional single-side cleaning method, the wafer cleaning equipment provided by the application can utilize the carrying mechanism, the first cleaning assembly and the second cleaning assembly to simultaneously finish the two-side cleaning and drying of the wafer in one equipment, so that the wafer cleaning efficiency is greatly improved, different pollutants are prevented from being introduced in a plurality of different cleaning procedures, and the wafer cleaning quality is remarkably improved.

Drawings

The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present utility model will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. In the drawings, embodiments of the utility model are illustrated by way of example and not by way of limitation, and like reference numerals refer to similar or corresponding parts and in which:

FIG. 1 shows a structure of a wafer cleaning apparatus according to an embodiment of the present utility model;

FIG. 2 illustrates a first cleaning assembly and a first drive mechanism of the wafer cleaning apparatus of FIG. 1;

FIG. 3 illustrates a second cleaning assembly and a second drive mechanism of the wafer cleaning apparatus of FIG. 1;

FIG. 4 shows a carrier mechanism and a wafer of the wafer cleaning apparatus of FIG. 1;

fig. 5 shows a driven roller of the wafer cleaning apparatus shown in fig. 4.

Reference numerals illustrate:

10. a wafer cleaning apparatus; 1. a cleaning mechanism; 11. a first cleaning assembly; 111. a first driving mechanism; 12. a second cleaning assembly; 121. a second driving mechanism; 13. a sonic nozzle; 14. a brush; 15. a first rotation source; 2. a loading mechanism; 21. a drive roller; 22. driven roller; 22a, an annular groove; 20. a wafer; 20a, a first surface; 20b, a second surface.

Detailed Description

The following description of the technical solutions in the embodiments of the present disclosure will be made clearly and completely with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.

Fig. 1 shows a structure of a wafer cleaning apparatus according to an embodiment of the present utility model. As shown in fig. 1, an embodiment of the present application provides a wafer cleaning apparatus 10 in which a wafer 20 is a silicon wafer used in semiconductor chip fabrication. The wafer cleaning apparatus 10 includes a carrier mechanism 2 for carrying and rotating a wafer 20 and a cleaning mechanism 1 for cleaning the wafer 20. The carrying mechanism 2 can carry the wafer 20 and rotate the wafer 20, so that the cleaning mechanism 1 can clean the surface of the wafer 20 sufficiently and effectively. The cleaning mechanism 1 includes a first cleaning assembly 11 provided on one side of the carrier mechanism 2 for cleaning a first surface 20a of the wafer 20, and a second cleaning assembly 12 provided on the other side of the carrier mechanism 2 for cleaning a second surface 20b of the wafer 20. According to the wafer cleaning device 10 provided by the embodiment of the application, the first cleaning component 11 and the second cleaning component 12 can simultaneously clean two surfaces of the wafer 20 with the assistance of the carrying mechanism 2, so that the cleaning efficiency and quality of the wafer 20 are remarkably improved. Compared with the traditional single-side cleaning method, the wafer cleaning device 10 provided by the application can utilize the carrying mechanism 2, the first cleaning assembly 11 and the second cleaning assembly 12 to simultaneously finish the two-side cleaning and drying of the wafer 20 in one device, so that the cleaning efficiency of the wafer 20 is greatly improved, different pollutants are prevented from being introduced into a plurality of different cleaning procedures, and the cleaning quality of the wafer 20 is remarkably improved.

As shown in fig. 2 and 3, the first cleaning assembly 11 and/or the second cleaning assembly 12 includes an acoustic wave generator (not shown) for causing cavitation and acoustic streaming effects to be generated by the cleaning agent, and an acoustic wave nozzle 13 connected to the acoustic wave generator for spraying the cleaning agent that has generated cavitation and acoustic streaming effects. The cleaning agent generates cavitation effect and acoustic flow effect under the action of the acoustic wave generator and is sprayed to the surface of the wafer 20 through the acoustic wave nozzle 13, thereby realizing effective cleaning of the surface of the wafer 20. Specifically, cavitation effect refers to a series of dynamic processes that micro bubble nuclei in liquid vibrate and grow under the action of ultrasonic field/megasonic wave and continuously gather acoustic field energy, when the energy reaches a certain threshold value, cavitation bubbles collapse sharply and close and generate shock waves when closed. The bubbles release a large amount of energy when they collapse sharply and generate a micro-jet with a strong impact force, thereby peeling particles attached to the surface of the wafer 20 into the cleaning agent and then being carried away by the continuously flowing cleaning agent. And the acoustic streaming effect means that the cleaning agent generates rapid flow under the action of vibration energy. The fast flowing liquid may generate a peeling force on the particles attached to the surface of the wafer 20, and when the peeling force is greater than the van der Waals force and electrostatic force acting on the particles at the same time, the particles are peeled off the surface of the wafer 20 and carried away by the fast flowing cleaning agent.

Further, the cleaning agent in this embodiment includes an acidic cleaning agent, an alkaline cleaning agent, nitrogen gas, and/or ultrapure water. The alkaline cleaning agent is mainly used for removing particles and metal ions on the surface of the wafer 20; the acidic cleaning agent is mainly used for removing organic matters and metal ions on the surface of the wafer 20; ultrapure water is mainly used for removing acidic cleaning agents and alkaline cleaning agents and other contaminants remained on the surface of the wafer 20; the nitrogen gas is mainly used for drying the surface of the wafer 20. The sonic nozzle 13 can spray the above-mentioned several cleaning agents having generated cavitation effect and sonic flow effect to the surface of the rotating wafer 20 in a predetermined order, for example, the sonic nozzle 13 of the first cleaning member 11 and the second cleaning member 12 sprays alkaline cleaning agent to both sides of the wafer 20 to remove particles, metal ions, etc. remained on the surface of the wafer 20; after the alkaline cleaner sufficiently cleans the surface of the wafer 20, the sonic nozzle 13 sprays ultrapure water to the surface of the wafer 20 to remove the alkaline cleaner and other contaminants remaining on the surface of the wafer 20; after the ultrapure water sufficiently cleans the surface of the wafer 20, the sonic nozzle 13 sprays an acidic cleaning agent to the surface of the wafer 20 to remove organic matters and the like remaining on the surface of the wafer 20; after the acid cleaning agent sufficiently cleans the surface of the wafer 20, the sonic nozzle 13 sprays ultrapure water to the surface of the wafer 20 to remove the acid cleaning agent and other contaminants remaining on the surface of the wafer 20; after the surface of the wafer 20 is sufficiently cleaned by the ultrapure water, the sonic nozzle 13 sprays nitrogen gas to the surface of the wafer 20 to blow-dry the cleaned surface of the wafer 20; under the dual action of nitrogen and centrifugal force, a wafer 20 with both clean and dry surfaces is finally obtained.

Illustratively, sonic nozzle 13 may be selected from one or more for spraying several different cleaning agents that have produced cavitation effects and acoustic streaming effects. Preferably, the sonic nozzle 13 is selected to be two in this embodiment and respectively assigned to the first cleaning assembly 11 and the second cleaning assembly 12, and the first cleaning assembly 11 and the second cleaning assembly 12 each include a plurality of pipes (not shown) connected to the corresponding sonic nozzle 13 and used for accommodating different cleaning agents. For example, the above-mentioned acidic cleaner, alkaline cleaner, nitrogen gas and ultrapure water are stored in different pipes, respectively, thereby avoiding the mutual influence between different cleaners to reduce the cleaning effect, and simultaneously reducing the production cost and the occupied volume of the apparatus.

Preferably, the sonic generator and sonic nozzle 13 in this embodiment are megasonic generator and megasonic nozzle 13, respectively. In the ultrasonic cleaning field, ultrasonic cleaning (< 100 kHz) and megasonic cleaning (800 to 2000 kHz) are classified according to the vibration frequency of the sonic generator. The lower the vibration frequency of the sonic generator, the larger the bubble size, the larger the impact force generated upon collapse, the stronger the ability to remove particles but the greater the damage to the surface of the wafer 20. In addition, there is a relatively static boundary layer at the interface of the surface of the wafer 20 and the cleaning agent, and when the particle diameter attached to the surface of the wafer 20 is smaller than the boundary layer thickness, the effect of the acoustic streaming cannot act on the particles. While the higher the vibration frequency of the sonic generator, the thinner the boundary layer and thus the smaller the removable particle size. Compared with ultrasonic cleaning, the megasonic cleaning with higher frequency has smaller damage to the surface of the wafer 20 and stronger capability of cleaning tiny particles, and can further improve the quality of the surface cleaning of the wafer 20, thereby improving the quality of the semiconductor chips.

Further, the first cleaning assembly 11 and/or the second cleaning assembly 12 each further include a brush 14 for cleaning a surface of the wafer 20. The brush 14 can more effectively remove the difficult-to-remove contaminants attached to the surface of the wafer 20. The quality of the surface cleaning of the wafer 20 can be further improved by matching with the cleaning agent which has generated cavitation effect and acoustic streaming effect and is ejected from the acoustic wave nozzle 13. Preferably, the bristles of the brush 14 are perpendicular to the first surface 20a and/or the second surface 20b of the wafer 20, and the material of the brush 14 may be natural wool or artificial fiber according to the requirement of use, so as to prevent the brush 14 from damaging the surface of the wafer 20. The shape of the brush 14 is not limited, and may be selected according to practical requirements, such as a disk shape, a roller shape, etc.

Illustratively, as shown in fig. 2 and 3, the first cleaning assembly 11 and/or the second cleaning assembly 12 further include a first rotation source 15 for driving the brush 14 to rotate on the surface of the wafer 20 about an axis perpendicular to the surface of the wafer 20. The brush 14 is rotated by the first rotation source 15, and the rotating brush 14 rubs against the surface of the rotating wafer 20, thereby effectively removing particles, organic residues, metal ions, and other contaminants on the surface of the wafer 20. Preferably, the direction in which the brush 14 rotates is opposite to the direction in which the wafer 20 rotates, so that the surface of the wafer 20 can be better brushed sufficiently, and the cleaning effect is further improved.

Further, the first rotation source 15 may be selected from a device capable of outputting rotation, such as a motor. In this embodiment, the first rotation source 15 is preferably a speed-adjusting motor so as to adjust the rotation speed of the brush 14.

As shown in fig. 2 and 3, the wafer cleaning apparatus 10 of the present embodiment further includes a first driving mechanism 111 and/or a second driving mechanism 121. Wherein, the first driving mechanism 111 is connected to the first cleaning assembly 11 and drives the first cleaning assembly 11 to perform a translational motion on the first surface 20a of the wafer 20, and the second driving mechanism 121 is connected to the second cleaning assembly 12 and drives the second cleaning assembly 12 to perform a translational motion on the second surface 20b of the wafer 20. Wherein the translational movement of the first cleaning assembly 11 and/or the second cleaning assembly 12 can be selected from linear movement and/or swinging movement in the horizontal direction, and linear movement in the vertical direction can be added on the basis. It should be noted that the directions of the translational movements of the first cleaning assembly 11 and the second cleaning assembly 12 may be the same or different, and may be selected according to the actual use requirements.

The first drive mechanism 111 and the second drive mechanism 121 are illustratively two single-arm mechanical arms, or one double-arm mechanical arm. In this embodiment, the first driving mechanism 111 and the second driving mechanism 121 are selected as a double-arm mechanical arm, and compared with two single-arm mechanical arms, the arrangement can effectively reduce the occupation area and the production cost of the device. The double-arm mechanical arm means that two mechanical arm main bodies are arranged on the same foundation or support, and the two mechanical arm main bodies can independently finish driving of corresponding cleaning components.

In the present embodiment, as shown in fig. 1 and 4, the carrier mechanism 2 includes a plurality of rollers that are spaced apart along the circular edge of the wafer 20 and are capable of holding the wafer 20, at least one driving roller 21 and at least two driven rollers 22 are included in the plurality of rollers, and the at least two driven rollers 22 are spaced apart along the circumferential direction of the wafer 20. Wherein the driving roller 21 is used for driving the wafer 20 to rotate among a plurality of rollers, and the driven roller 22 is used for rotating and supporting the wafer 20. The wafer 20 is placed between a plurality of driving rollers 21 and driven rollers 22 and rotated by the driving rollers 21 and driven rollers 22 so that the first cleaning assembly 11 and/or the second cleaning assembly 12 can sufficiently clean the surface of the wafer 20. In the present embodiment, the loading mechanism 2 includes two driving rollers 21 and two driven rollers 22 arranged at intervals along the circular edge of the wafer 20.

In this embodiment, as shown in fig. 5, in order to better support the rotating wafer 20, the driven roller 22 further has an annular groove 22a, and the axial section of the driven roller is i-shaped, and the driven roller 22 supports the wafer 20 through the annular groove 22a, so that the wafer 20 rotates more reliably, and the driven roller is not easy to separate from the loading mechanism 2 even if the wafer 20 rotates. Preferably, the width of the annular recess 22a is slightly greater than the thickness of the wafer 20 to ensure that the wafer 20 can be more easily placed between the drive roller 21 and the driven roller 22.

In this embodiment, the wafer cleaning apparatus 10 further includes a second rotary source (not shown) coupled to the drive roller 21 for driving rotation thereof. The second rotation source may be a device capable of outputting rotation, such as a motor. In this embodiment, the second rotation source is preferably a variable speed motor to facilitate adjusting the speed at which the wafer 20 rotates. In addition to the carrying mechanism 2 described in the present embodiment, the carrying mechanism 2 may be other known structures that can achieve the same functions.

Alternatively, the material of the wafer 20 in this embodiment may be silicon carbide or silicon nitride. Silicon carbide has the advantages of wide forbidden band, high breakdown field, large heat conductivity, high electron saturation drift speed, strong radiation resistance, good chemical stability and the like, and is a key semiconductor material of a new generation of microelectronic devices and circuits.

The operation of the wafer cleaning apparatus 10 in this embodiment will be further described with reference to fig. 1 to 5.

The wafer 20 is first placed between the driving roller 21 and the driven roller 22, the driving roller 21 is connected to a second rotation source, and the second rotation source drives the driving roller 21 to rotate, so as to drive the wafer 20 and the driven roller 22 to rotate together. The first drive source then drives the brush 14 on the first cleaning assembly 11 and/or the second cleaning assembly 12 to rotate, and the direction of rotation of the brush 14 is opposite to the direction of rotation of the wafer 20. The first drive mechanism 111 and/or the second drive mechanism 121 then drive the first cleaning assembly 11 and/or the second cleaning assembly 12, respectively, proximate to the surface of the wafer 20 and cause the brush 14 thereof to move rotationally and translationally over the first surface 20a and/or the second surface 20b of the wafer 20, respectively. While the megasonic generator of the first cleaning assembly 11 and/or the second cleaning assembly 12 causes cavitation and acoustic streaming effects to occur with several cleaning agents. The megasonic nozzle 13 sprays alkaline cleaning agent which has generated cavitation effect and acoustic streaming effect, and simultaneously brushes the surface of the wafer 20 in cooperation with the rotating brush 14 to remove particles, metal ions and the like remained on the two surfaces of the wafer 20. After the brush 14 and alkaline cleaner sufficiently brush the surface of the wafer 20, the megasonic nozzle 13 sprays ultrapure water to the surface of the wafer 20 to remove alkaline cleaner and other contaminants remaining on the surface of the wafer 20. After the surface of the wafer 20 is sufficiently cleaned by brushing and ultra-pure water rinsing with the brush 14, the megasonic nozzle 13 sprays an acidic cleaning agent to the surface of the wafer 20 and brushes the surface of the wafer 20 in cooperation with the brush 14 to remove organic matters and the like remaining on both surfaces of the wafer 20. After the brush 14 and the acidic cleaner sufficiently clean the surface of the wafer 20, the megasonic nozzle 13 continues to spray ultrapure water onto the surface of the wafer 20 to remove the acidic cleaner and other contaminants remaining on the surface of the wafer 20. After the surface of the wafer 20 is sufficiently cleaned by brushing and ultra-pure water rinsing with the brush 14, finally the megasonic nozzle 13 sprays nitrogen gas to the surface of the wafer 20 to blow-dry both surfaces of the cleaned wafer 20. Under the dual actions of nitrogen blow-drying and centrifugal force spin-drying, the wafer 20 with clean and dry surfaces is finally obtained.

Thus, with the wafer cleaning apparatus 10 provided above, the first cleaning assembly 11 and the second cleaning assembly 12 thereof can achieve simultaneous cleaning of both surfaces of the wafer 20 with the aid of the carrier mechanism 2, and the cleaning efficiency of the wafer 20 is significantly improved. Furthermore, the first cleaning mechanism 1 and/or the second cleaning mechanism 1 can also utilize megasonic generators and megasonic nozzles to spray acidic cleaning agent/alkaline cleaning agent/ultrapure water/nitrogen gas to the first surface 20a and/or the second surface 20b of the wafer 20 and brush both sides of the wafer 20 in cooperation with the brush 14, thereby more effectively removing particles, organic residues, metallic ions and other contaminants deposited on the surface of the wafer 20. Compared with the traditional single-side cleaning method, the wafer cleaning device 10 provided by the application can utilize the carrying mechanism 2, the first cleaning assembly 11 and the second cleaning assembly 12 to simultaneously clean and dry two surfaces of the wafer 20 in one device, so that the cleaning efficiency of the wafer 20 is greatly improved, different pollutants are prevented from being introduced into a plurality of different cleaning procedures, and the cleaning quality of the wafer 20 is remarkably improved.

The comparison results of the wafer cleaning device and the cleaning method in the embodiment after cleaning the wafer are as follows:

as can be seen from the table, compared with the conventional cleaning method, the wafer cleaning device of the embodiment has the advantages that the particle number of more than 1um is reduced by 5 times, the particle number of less than 1um is reduced by 3.3 times, the re-cleaning rate is reduced by 5 times, the metal ion concentration is less than or equal to 5E10AT/cm < 2 >, the processing efficiency is improved by 2 times, and the service life of the cleaning liquid is prolonged by 1.67 times.

It should be noted that in the above description of the present application, the first surface and the second surface of the wafer are used to refer to two opposite surfaces, and one may be selected as the first surface from the two opposite surfaces of the wafer, while the remaining one is the second surface. In addition, the terms "first" or "second" and the like used in this application to refer to numbers or ordinal numbers are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" is at least two, for example, two, three or more, etc., unless explicitly defined otherwise.

In the foregoing description of the present application, the terms "fixed," "mounted," "connected," or "connected" are to be construed broadly, unless otherwise specifically indicated and defined. For example, in terms of the term "coupled," it may be fixedly coupled, detachably coupled, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intermediaries, or in communication with each other or in interaction with each other. Therefore, unless otherwise specifically defined herein, a person skilled in the art can understand the specific meaning of the above terms in the present utility model according to the specific circumstances.

While various embodiments of the present utility model have been shown and described herein, it will be obvious to those skilled in the art that such embodiments are provided by way of example only. Numerous modifications, changes, and substitutions will occur to those skilled in the art without departing from the spirit and scope of the utility model. It should be understood that various alternatives to the embodiments of the utility model described herein may be employed in practicing the utility model. The appended claims are intended to define the scope of the utility model and are therefore to cover all equivalents or alternatives falling within the scope of these claims.

Claims (11)

1. A wafer cleaning apparatus, comprising:

the carrying mechanism is used for carrying and rotating the wafer;

the cleaning mechanism comprises a first cleaning component which is arranged on one side of the carrying mechanism and is used for cleaning the first surface of the wafer, and a second cleaning component which is arranged on the other side of the carrying mechanism and is used for cleaning the second surface of the wafer;

the first cleaning component and/or the second cleaning component comprise an acoustic wave generator for promoting the cleaning agent to generate cavitation effect and acoustic flow effect, and an acoustic wave nozzle connected with the acoustic wave generator and used for spraying the cleaning agent which generates the cavitation effect and acoustic flow effect;

the first cleaning assembly and/or the second cleaning assembly also each include a brush for cleaning a surface of the wafer.

2. The wafer cleaning apparatus of claim 1, wherein the sonic generator is a megasonic generator and the sonic nozzle is a megasonic nozzle.

3. The wafer cleaning apparatus of claim 1, wherein the first cleaning assembly and/or second cleaning assembly further comprises a first rotation source for driving the brush to rotate on a surface of the wafer about an axis perpendicular to the surface.

4. The wafer cleaning apparatus of claim 3, wherein the first rotation source comprises a speed motor.

5. The wafer cleaning apparatus of any one of claims 1 to 4, comprising a first drive mechanism coupled to the first cleaning assembly and driving the first cleaning assembly in translational motion over the wafer, and/or a second drive mechanism coupled to the second cleaning assembly and driving the second cleaning assembly in translational motion over the surface of the wafer.

6. The wafer cleaning apparatus of claim 5, wherein the first and second drive mechanisms are two single arm robotic arms or one dual arm robotic arm.

7. The wafer cleaning apparatus of any one of claims 1 to 4, wherein the carrier mechanism comprises a plurality of rollers spaced along a circular edge of the wafer and capable of holding the wafer, at least one drive roller being included in the plurality of rollers for driving the wafer to rotate between the plurality of rollers.

8. The wafer cleaning apparatus according to claim 7, wherein among the plurality of rollers, at least two driven rollers having an annular groove and having an i-shaped axial cross section are included, the at least two driven rollers being spaced apart along a circumferential direction of the wafer and supporting the wafer through the annular groove.

9. The wafer cleaning apparatus of claim 7, further comprising a second rotational source coupled to the drive roller for driving rotation thereof.

10. The wafer cleaning apparatus of claim 9, wherein the second rotation source comprises a speed motor.

11. The wafer cleaning apparatus of any one of claims 1 to 4, wherein the material of the wafer is silicon carbide or silicon nitride.