WO2003095700A1

WO2003095700A1 - Method for high purity purification of high functional material and method for deposition of high functional material by mass separation method

Info

Publication number: WO2003095700A1
Application number: PCT/JP2003/005595
Authority: WO
Inventors: Nobuyuki Mori; Takashi Ushida; Yoshimi Kamijo; Ko Nakajima; Akihiro Okazaki; Akira Mitsuzuka; Takehiro Takoshima; Naohiko Mikami
Original assignee: Umk Technologies Co., Ltd.
Priority date: 2002-05-10
Filing date: 2003-05-01
Publication date: 2003-11-20
Also published as: TW591078B; JP2004031887A; TW200306332A

Abstract

A method for high purity purification, wherein an organic compound, such as dimethyl zinc, or a gaseous element compound, such as oxygen as a starting material is irradiated with an excimer laser (21), dissociated and ionized by the non-resonant multiphoton absorption not passing by way of an intermediate level, and the ionized element is freed of impurities by the mass separation method using the electromagnetic field (55) to thereby deposit a predetermined ionized element alone on a target (61). In an embodiment, elements to be ionized are Zn and, Se or O, and N, Cl or the like is used as a dopant. The method allows the reduction of the load by impurities derived from starting materials and the improvement of ionization efficiency, resulting in the improvement of productivity, in a high purity purification process by the mass separation method for an element such as zinc or selenium.

Description

Specification

'' High-purity purification of high-performance materials by mass separation and deposition of high-performance materials

The present invention relates to a method for purifying a material as a functional material such as a metal and a semiconductor material with high purity and a film forming method for forming a laminated structure and the like constituting a device. Background art

Conventionally, materials used for manufacturing semiconductor devices and sensors, so-called high-performance materials, etc., need to be in a very high purity state in order to exhibit their physical properties. It is necessary to form the substrate by laminating or by laminating as a substrate.

For this reason, oxides and other raw materials that have been used as raw materials have been reduced to single substances, and a more sophisticated purification process has been required, and chemical and physical processes have been repeated to remove impurities to achieve high purity. ing. A typical example of these is high-purity Si used in semiconductor devices and the like. After the reduction step, the degree of dullness is increased through a physicochemical process such as utilizing segregation.

However, these refining processes are generally not only complicated and low in productivity due to the repetition of physical processes including a high-temperature metallurgical reduction process, but also include impurities from the refining environment during the process. Because it is unavoidable, its purification has a certain range of limitations.

In addition, not only Si, but also II-VI group semiconductors and III-V group semiconductors have been studied along with the development of semiconductor devices as elements requiring high purification, and they have been applied and commercialized as light emitting diodes. However, for these elements such as Zn, Se, Ga, and As used in the light-emitting diode, a practical high-purity purification method like Si has not been completed. At present, the high-purity physical properties of these have not been fully elucidated. For this reason, blue light-emitting diodes using ZnSe-based II-VI semiconductors, which have recently been put to practical use, are said to be the ultimate blue devices. However, the achievement of high purity is one of the bottlenecks that hinders practical application.In addition, the method uses epitaxial growth using GaAs with a lattice constant close to that of the substrate, Defects are likely to occur, which shortens the life of the product, and has defects such as large luminescence loss absorbed by the substrate.

For this reason, as described above, it is desired to purify Zn and Se as materials and to develop a method for forming a pulp serving as a substrate composed of these materials or a film forming method as a substrate structure.

On the other hand, mass spectrometry is a method of high purification that can be widely applied regardless of the type of target element, in which ionized elements are deflected by an electromagnetic field and deposited on a target to separate impurities. Purification methods using the principle of the vessel have been proposed, and these methods have been combined with ionization by selective excitation using a laser. Various applications have been attempted.

Conventional technology

Patent Document 1: Japanese Patent Application Laid-Open No. Hei 5-4-1357

Patent Document 2: Japanese Patent Publication No. 58-5092

Patent Document 3: Japanese Patent Application Laid-Open No. 6-26209

Patent Document 4: Japanese Patent Application Laid-Open No. Hei 6-226020

Patent Document 5: Japanese Patent Application Laid-Open No. 6-26203

Patent Document 6: Japanese Patent Application Laid-Open No. 6-2646428

These include, for example, the target element or element in a high-purification method in which elements and molecules evaporated at a high temperature from a Balta-like raw material produced by metallurgical methods are ionized and deflected by an electric field to separate impurities. Improve ionization efficiency by irradiating them with radiation energy, such as a laser with two or more frequencies, that excites only the molecules from the ground state to the intermediate energy level and then to the energy level that ionizes them. Further, attempts have been made to form a composite film of a high-purity element or compound by separating the impurities in this way and depositing them directly on a collecting substrate. By the way, in these methods, in each case, an element or a molecule to be subjected to high purity purification is previously purified through conventional chemical and physical processes, and then heated and evaporated with a crucible or the like to remove atoms or molecules. It is selectively excited and ionized by laser irradiation.

However, when targeting these elements, particularly elements such as zinc and selenium, unlike ore, the ore, which is a mixture of various elements, is used as a starting material, Since other metal elements are simultaneously reduced and accompanied, it is inevitable that these various impurities are mixed.

For this reason, in each of the above prior arts, deflecting an ionized element by an electromagnetic field to separate impurities, or performing selective ionization with a laser beam of a specific wavelength, inevitably requires a considerable amount of these. Aiming at the removal of impurities based on the premise of the presence of impurities, the load on the refining process is large due to these impurities as long as these pulp metals are used as starting materials. It is difficult to achieve the extremely high purity levels that have been achieved. In particular, these prior art methods of selectively exciting an element having an energy level corresponding to an energy level in a multi-stage manner by using a specific wavelength selectively ionize only a specific metal atom. It is stated that the use of a wavelength corresponding to the excitation energy gap of these specific elements makes it possible to efficiently put atoms into an excited state.

However, as described in the above-mentioned prior art document, in order to obtain a laser beam having a specific wavelength, a dye laser having selectivity at a specific wavelength is used, and an excimer laser is used as an excitation light source in accordance with the absorption band. Since optical pumping is performed using such a method, the final output is significantly reduced, that is, the overall energy efficiency is significantly reduced.In ionization, it is necessary to input a plurality of laser beams coaxially. There are restrictions.

That is, these selective ionization processes themselves also serve as a means for separating impurities. In these prior arts, as described above, rather than the overall energy efficiency and productivity, the impurity concentration of the starting material is determined. Therefore, reduction of these impurities is an issue. There is also a method of dissociating and ionizing the vaporized raw material compound by plasma treatment. Others are lost as they accumulate in the surroundings even if dissociated. In addition, impurities are also ionized at this stage with almost no distinction, so that the efficiency is low and the load on maintenance is low.

-On the other hand, in order to manufacture a device using the high-purity material purified in this way, --- the purified high-purity material is subjected to another process such as electron beam melting with a rutupo, etc., and then to the VJ method. The pulp formed in this manner is processed into a substrate, or the pulp made of the same purified element is used as a raw material on these substrates through a film formation process using MBE or the like. Impurities are taken in again from the surrounding environment and the like in the melting step and the like for the highly purified material, so that it is difficult to maintain the high achieved purity without lowering the purity. Under such circumstances, the extremely high purity required for device manufacturing as described above is practically difficult to achieve.

Attempts have been made to realize such an extremely high-purity film formation method by ionizing heated and vaporized elements and depositing them on a substrate according to the principle of mass separation. Although the high degree of dullness can be achieved by separating the ionized target element by impurities using an electromagnetic field, the above problem can be solved with regard to the improvement of the efficiency of impurity removal and ionization in the process from starting material to ionization. Not something.

Conventional technology

Patent Literature 1: Japanese Patent Application Laid-Open No. Hei 8-172051

Patent Document 2: Japanese Patent Application Laid-Open No. H11-1877343

Patent Document 3: Japanese Patent Application Laid-Open No. 2000-201 2

The present inventors have previously obtained many of these elements as organic compounds which are easily vaporized, and these organic compounds are originally of high purity because they do not go through a so-called metallurgical high-temperature reduction process. It is proposed that by using these as starting materials and dissociating by plasma treatment, a certain level of high purity can be easily achieved. (Japanese Patent Application No. 2000-2014).

Therefore, by using these as starting materials, a consistent purification method that ionizes the target element and separates impurities by an electromagnetic field can reduce the load on the purification process, and further integrate the film formation process leading to device formation. With this process in mind, we have considered that it is possible to easily achieve an extremely high level of purification without going through a multi-stage purification process, and have been studying purification methods that can actually achieve high efficiency. However, when the target element is ionized using these organometallic compounds as starting materials, it is different from ionization of a single element or molecule as it is.In the dissociation process, the dissociation process and the ionization process are performed for organic compounds. Must go through.

On the other hand, when plasma is used, the efficiency is not necessarily high as described above.

In addition, the above-described method of performing ionization by selective excitation in the prior art is basically aimed at ionization for separating a single element, and is performed by adding a dissociation process of such a compound. As described above, it is very difficult to practically use the laser irradiation utilizing wavelength selectivity until ionization of the target element due to the reduced energy efficiency and low productivity.

Problems of the Invention

In a method of deflecting ionized elements with an electromagnetic field to remove impurities on the same principle as a mass spectrometer and depositing them on a target to obtain a high-purity substance, a relatively high-purity vaporizable organic compound of metal or semiconductor As a starting material, the overall efficiency of the ionization process is improved, the ionization rate of the target element is improved, and the load on mass separation is reduced. In addition, it is possible to directly form a film such as a walter or a laminate without deteriorating the purity of the high-purity material obtained in this way, and to apply the method to a depice manufacturing technique. Disclosure of the invention

The present invention provides a method for dissociation and ionization of non-resonant multiphoton absorption that does not pass through an intermediate level by excimer laser irradiation on a vaporized metal or semiconductor organic compound. A high-purity purification method characterized in that the ionized element is separated into impurities by a mass separation method using an electromagnetic field, and only a predetermined ionized element is deposited on a target.

Particularly, Zn or Se is used as the above element, and dimethyl or selenium is used as the organic compound.

In addition, the starting materials of the elements that become high-performance semiconductor materials are metal or semiconductor organic compounds and gaseous element compounds, which are dissociated and ionized by nonresonant multiphoton absorption that does not pass through intermediate levels by excimer laser irradiation. This is a deposition method in which only a predetermined ionized element is deposited on a target by a mass separation method using an electromagnetic field, and a barta or a laminated structure of a high-performance material is directly obtained. When depositing only a specified ionization element on a target by mass separation using an electromagnetic field, two or more ions are alternately directed from each ion source toward the target, simultaneously, or before or after these. And the ions are in a beam form and run on a target to form a film. It is, to control the ratio of ionic species.

Further, the predetermined elements are Zn, Se or O, and the starting materials are dimethyl zinc, dimethyl selenium, and O ₂ or dimethyl ether, respectively, each of which is composed of ZnSe or Zηθ. A high-performance material is deposited and formed.

In addition, N and C1 as dopants are added as the above-mentioned predetermined elements, and N ₂ , ammonia, trimethyl 4-amine, a type of nitrogen oxide, and C 1 _{Use 2} or HC1.

In the present invention, the target of ionization is not a metal element or molecule evaporated from Balta by heating at a high temperature, but a vaporizable substance such as a vaporizable organic compound of metal or semiconductor as a starting material. Metals and semiconductor elements are ionized at the same time as dissociation.Unlike molecules of these organometallic compounds, the electronic state is not limited to the electron energy level, but the vibration and rotation of molecules. There is an advantage that the wavelength selection range can be widened according to the energy state due to the energy state.

In addition, the ionization process is performed without passing through an intermediate level by excimer laser irradiation. It depends on the multiphoton absorption of resonance.

This process has been known as a phenomenon in which the transition probability increases in proportion to the square of the incident light intensity.However, the absolute value of the conventional light intensity is small, and sufficient efficiency cannot be obtained. However, its application had not been reached.

The present inventors irradiate the molecule directly with an excimer laser,

It was confirmed that the efficiency in the two-photon process could sufficiently reach the practical range by the square law if 3 ° was used, and conditions suitable for the above purpose were examined.

When an excimer laser with high light intensity is directly irradiated on the organometallic compound molecules and ionization is performed in a two-photon process due to the high light density, the molecules can absorb multiple lights within one laser pulse. Has a lower dissociation energy than the ionization energy, so molecules dissociate by one-photon absorption.

Therefore, the ionization process and the dissociation process occur in competition with each other, where the ionized molecules further absorb light and sequentially dissociate these alkyl groups or the like, or the dissociated molecules absorb light and absorb. The target metal ion can be obtained by ionization.

According to this method, it is possible to apply to various organometallic compounds using only one excimer laser as compared with the above-described method in which different wavelengths must be used for each metal atom.

Further, by selecting a molecule whose excitation energy gap is close to the wavelength of the excimer laser, it is possible to ionize efficiently.

In the present invention, as described above, a vaporizable organic compound or a gaseous elemental compound of the target element is used as a starting material for ionization, and in these starting materials, the impurity concentration is low due to the origin of the manufacturing process. Extremely low, the load on the subsequent purification process due to impurities is not a problem.

Metals, organic compounds of semiconductors, and gaseous element compounds were selected as such starting materials in the present invention because of these characteristics, and there are no particular restrictions on the form suitable for excimer laser irradiation. Not applicable.

According to these raw materials, selective ion separation of co-existing high-concentration impurities can be achieved, as in the case where a simple substance in the form of pulp is vaporized and vaporized at high temperature and ionized. It is not necessary to perform this step by the conversion process, and the overall energy efficiency can be significantly improved by applying the above-described dissociation / ionization process by laser irradiation.

Considering the case of using an ArF excimer laser (193 nm, 6.4 eV) or KrF excimer laser (248 nm, 5.0 eV) as the irradiation laser and using dimethyl zinc as a raw material, the two-photon process In this case, it corresponds to absorbing energy of ArF: 12.8 eV and KrF: 10. OeV, respectively.

On the other hand, the ionization energy of dimethylzinc (CH ₃ ) ₂ Zn is 8.9 eV, and the elementary processes of the ionization and dissociation reactions are as follows.

(CH ₃ ) ₂ Z n + 2 v (CH ₃ ) ₂ Z n ⁺ + e- (1) CH ₃ Z n + 2 hv-CH ₃ Z n ⁺ + e- (2)

(CH ₃ ) ₂ Z n + hv ^ CH ₃ Z n + CH ₃ (3) CH ₃ Z n + hv → Z n + CH ₃ (4)

(CH ₃ ) ₂ Z n ⁺ + hv → CH ₃ Zn ⁺ + CH ₃ (5) CH, Z n ⁺ + hv-Z n ⁺ + CH ₃ or Z n + CH ₃ ⁺ (6)

(CH ₃ ) ₂ Z n ⁺ C¾Z n ++ CH (7)

CH ₃ Z n ⁺ - _{in> Z n ++ CH 3 or Z} n + CH 3 (8) above reaction formula, (1), (2) I O emissions reaction by light absorption of dimethyl zinc, (3 ) And (4) show the process of the dissociation reaction due to the light absorption of dimethylzinc.

In addition, dissociation reactions due to light absorption (5) and (6) also occur when dimethylzinc has excess energy, as shown in (7) and (8).

On the other hand, the activation energy of the dissociation reaction in the electronic ground state is as follows.

_{_{(CH 3) 2 Z n →}} CH 3 Z n + CH 3 63.7Kcal / mol (= 2.7eV)

(9)

CH, Zn → Zn + CH, 24.5Kcal / mol (= l.leV) (10) Therefore, from the ionization and dissociation reactions listed above,

(CH ₃ ) ₂ Zn → Zn ⁺ processes include (1) → (5) → (6) or (1) → (7) → (8) or (1) → (7) → (6 ) Or (1) → (7) → (8), where the ionization reaction occurs first, and (3) → (2) → (6) or (3) → (2) → (8) There may be pathways for dissociation reactions.

(7) and (8) react in the electronic ground state with the activation energy (9) and (1)

0), and the excess energy when ionized in a two-photon process by an ArF excimer laser is

Since 12.8 eV-8.9 eV = + 3.9 eV, it can be sufficiently dissociated in the course of these reactions, and the intended zinc ion can be obtained.

Further, as described above, there is a reaction such as (2) in which the dissociated molecules absorb light and are ionized. Therefore, even when the surplus energy does not reach the activation energy of (9) or (10), the zinc ion Is obtained.

For these reasons, the above-mentioned KrF excimer laser with low absorption energy can also be used.

In addition, the following other organometallic compounds can also be used as raw materials, as can be seen from the ionization energy described.

Jechiru Zinc _{_{_{(C 2 H 5) 2 Z}}} n: 8. 6 eV

Dimethyl selenium (CH ₃ ) ₂ Se: 8.4 eV

Jechiruseren (C ₂ H _5). S e: 8.3 eV

When introducing oxygen (0) as a gaseous element compound as a raw material other than organic metal or nitrogen (N) or chlorine (C1) as a dopant into the system, the following raw materials can be used It is.

Oxygen (0): 0 ₂ Gas: 1 2. 0 eV

Dimethinolete: 10.0 eV

Nitrogen _{(N): N 2: 1} 5. 6 eV

Ammonia (NH ₂ ): 1 0.1 eV

(CH _a ) ₃ N: 7.9 eV Other various nitric oxide:.. 9 3~1 2 9 eV chlorine _{(C 1): C 1 2} :.. 1 1 5~1 1 6 eV

Hydrogen chloride (HC 1): 12.7 eV

In addition to the above, laser irradiation means and other organometallic compounds, gases or vaporizable compounds, whose ionization energy and two-photon absorption energy satisfy these relationships, can be ionized by the same process. Applicable to process.

As described above, in the present invention, it is possible to obtain target ions with high efficiency by a two-photon absorption process by irradiation with a laser having a high light intensity such as an excimer laser, and at the same time, a highly pure organometallic compound is used as a starting material. Therefore, the load on the purification process can be reduced and the purity level of the ion can be easily improved.

Raw materials of interest, certain purity as described above is secured _{_{(CH 3) 2 Z n,}} (CH 3) an organic compound such as ₂ S e, at present CVD (Chemica 1 Vaper Deposition) material It can be obtained relatively inexpensively. In particular, these organometallic compounds are easily vaporized at room temperature, which is advantageous in handling in the dissociation and ionization processes.

In the ionization process of the present invention, since the ionized target element can be sent to the separation process using an electromagnetic field with high purity, higher purity is achieved and the load on the apparatus is significantly reduced.

Therefore, the purity of the obtained ions is synergistically enhanced by the high purity derived from these raw materials and the high purity in the selective ionization excitation process, and extremely high purity is obtained.

Free radicals and remaining impurity components generated in these ionization processes are quickly discharged out of the system as gaseous.

Method itself of the elements separated by the principles of mass analyzer is a speak classic, well used in isotope separation, such as U ^235, are currently in the widely used as a precision measuring instruments chemical analysis and molecular composition However, due to the low ionization efficiency, production I "production was not improved, and as described above, its use was limited to analytical instruments. In the present invention, it is possible to form an extremely high-density ion beam with high efficiency. As a result, it is possible to secure sufficient efficiency and productivity by applying the method as a means for purifying a pure material. became.

In addition, ions that have been deflected in the electromagnetic field and have undergone the impurity separation process are directed to the target along a predetermined trajectory and are deposited.However, since the ions are excited including their kinetic energy, they are deposited on the target. As the heat is released, a stable crystal structure is obtained.

Therefore, the target has a predetermined crystal structure (a single crystal composed of the same element and has a consistency with the crystal structure) in advance, and the kinetic energy and the preheating conditions are controlled to obtain a layer structure having the predetermined crystal structure. Can be formed. In addition, since the deposition process forms a stable crystal structure, it can be recovered as a bulk body.

Furthermore, the target element is not limited to one kind, but is ionized using two or more kinds of elements as described above, and the separated and purified ion beams from the respective ion sources are alternately applied to the target or at a predetermined ratio. By cross-mixing with each other and depositing them at a predetermined thickness, an arbitrary laminated structure or a structure composed of an arbitrary combination of compounds can be obtained.

When the laminated structure is extremely thin, elements from each ion source can be deposited and laminated, and a compound layer can be formed with a stable crystal structure, and can be replaced with an epitaxy layer. To form a laminated structure composed of each element or compound layer.

Conventionally, such a film formation method has been attempted to form a thin film as MBE. However, since the amount of deposition is very small, only a very thin (several nm) thin film of several atomic layers can be formed. Although it was not possible to confirm the results and to apply the method as a manufacturing method, the film forming method of the present invention was able to form a relatively thick and layered structure under evenly controlled conditions. Application to natural depays can be expected.

Further, by cross-mixing and depositing the beam of each element ion, it is possible to form various target compound semiconductor layers.

These deposited layers of the present invention have a high deposition rate, a high productivity and a stable crystal structure. By forming the structure, it is possible to secure a practical level of productivity at once, instead of the conventional trial scale.

According to these methods for manufacturing and forming a Balta, since the Balta and the laminated structure are formed directly as highly purified elements or compounds, the impurity concentration is maintained in the purification process. In addition to improving the productivity, it can satisfy the strict high-purity conditions required for manufacturing devices made of these functional materials. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a diagram showing the structure and principle of the purification device of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, a specific description will be given with reference to the drawings.

In the figure, a source gas such as dimethyl zinc / dimethyl selenium, which is vaporizable, is sprayed and supplied from a source gas supply unit 11 to be vaporized. The entire apparatus is composed of a vacuum chamber evacuated by vacuum pumps 70, 71, 72, 73, and is operated by gate valves 30, 31, 32, respectively, along the source gas route. It is divided into ionization stage 10, acceleration stage 40, drawing stage 50, magnetic separation stage 55, and deposition stage 60.

In the figure, a single course from the raw material supply unit to the deposition stage is shown for explanation of the high-purity refining process, but high-performance materials such as ZnSe and ZnO For the step of forming the compound and the step of injecting N, C1, etc. as these dopants, a course from the raw material supply unit to the deposition stage is provided for each of these steps.

In the ionization stage, the vaporized source gas is irradiated by an excimer laser to dissociate and the metal elements are ionized.

The laser light is opaque to the wavelength because the wavelength excites the metal element, and is efficiently absorbed. However, while the laser light is irradiated along the gas flow path in the chamber, the laser light is emitted. Absorbing efficiency by placing a mirror on the wall facing Can be improved.

The ionized metal is accelerated by the electric potential applied between the accelerating electrodes 41 of the accelerating stage due to its electric charge, and enters the constriction stage. The dissociated organic gas is removed by the vacuum pump 70, 7 together with impurities. It is discharged out of the system by 1 and the inside of the champ is maintained at a high vacuum.

In order to introduce only the ionized metal into the deposition stage, the ion is focused by the magnetism of the focusing coil 51 of the aperture stage so that the ion beam is focused at the aperture 54.

In the acceleration stage, the ions are accelerated by an electric field, converged into a beam by a converging stage, incident on a magnetic separation stage, further deflected by a magnetic field, and charged with a different Z-mass ratio. It is deflected from 2 and blocked by the aperture 4 3 and separated.

In the deposition stage, the neutralized metal element is deposited on the target 61.

By adjusting the deposition conditions such as the target temperature and acceleration conditions, the film formation conditions on the target can be adjusted, and not only a single deposited layer such as Zn or Se, but also the composition of these compounds Can be formed.

When a predetermined deposition process is completed, the target 61 is sequentially replaced by the motor 62, so that the purification process and the film formation process can be continued without breaking the vacuum. Although the ion beam is depicted as having a certain width in the figure, the beam aperture may be adjusted according to the deposition area on the target.

By scanning the target while deflecting the ion beam by an electromagnetic field in a charged state, the deposition conditions on the target can be made uniform, or the deposition area can be arbitrarily changed.

Furthermore, the ion beam is expanded, the aperture conditions are adjusted, and the deposition conditions are changed to achieve uniform deposition. In addition, the acceleration conditions are controlled to control the ion implantation and the crystallization conditions. It can be used for adjustment, furthermore, these processes can be performed on an arbitrary area, or the ion beam can be scanned to control the deposition conditions and for uniform deposition over a large area. Industrial applicability

The high-purity refining method and film-forming method of the present invention achieve ultra-high purity, which is essential for realizing new depises for elements that could not previously achieve ultra-high purity, especially elements such as zinc and selenium. The application of mass separation methods and ionization methods by multiphoton absorption by direct irradiation of high-intensity excimer laser, which have been known in principle as elemental technologies and put to practical use, as technical means for new issues. As a result, a purification method with high practicality and high productivity is realized, thereby contributing to industrial development.

Claims

The scope of the claims

1. Excimer laser irradiation dissociates and ionizes the vaporized metal or semiconductor organic compound by non-resonant multiphoton absorption that does not pass through an intermediate level, and removes the ionized element by mass separation using an electromagnetic field. A high-purity purification method comprising separating and depositing only a predetermined ionized element on a target.

2. The high-purity purification method according to claim 1, wherein the element is Zn or Se, and dimethyl zinc or dimethyl selenium is used as the organic compound.

3. An organometallic compound and a gaseous elemental compound are used as starting materials for elements that become semiconductor high-performance materials, and dissociation and ionization are performed by non-resonant multiphoton absorption without intermediate levels by excimer laser irradiation. A deposition method in which only ionized elements are deposited on a target by a predetermined ionizing element by a mass separation method using an electromagnetic field to directly obtain a balta or a laminated structure of a high-performance material.

4. When depositing only the specified ionized elements on the target by the mass separation method using an electromagnetic field, two or more ions are alternately or simultaneously or simultaneously directed from each ion source toward the target. 4. The deposition method according to claim 3, wherein the deposition is performed at an arbitrary ratio before and after these steps.

5. The deposition method according to claim 4, wherein the ions are in the form of a beam, and the thickness of the film and the ratio of the ion species are controlled by scanning over the target.

6. The predetermined element, and Z n, an S e or O,, respectively it as a starting material dimethyl dumbbell, dimethyl selenium, and及Pi 0 ₂ or dimethyl ether, highly functional material deposited each Z n S e 5. The deposition method according to claim 3, wherein the deposition method is ZnO.

7. As the above-mentioned predetermined elements, N and C 1 as dopants are further added, and N ₂ , ammoua, trimethylamine, a kind of nitrogen oxide, and C 1 ₂ or 5. The deposition method according to claim 3, wherein the deposition method is HC1.