JPH0786164A - Method and equipment for producing fine structure material and light emission element having fine structure - Google Patents

Abstract

PURPOSE:To provide a method and equipment for producing a fine structure material, e.g. a cluster (quantum box) having arranged particle size and particle size distribution, a coating of different substance therefor, a one dimensional polymer having high orientation, a one dimensional electric conductor, a fine line cluster (quantum fine line), and a light emission element having fine structure. CONSTITUTION:A group of clusters 101 generated in a first process and a group of material particles (atomic or molecular state) of a substance 102 having a band gap larger than the cluster 101 generated in a second process are fed simultaneously or alternately to a substrate 104 thus filling the substance 102 compactly with the clusters 101, while controlling the density thereof, without producing any gap on the periphery.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to clusters having uniform particle diameters (typically, those having a spherical diameter of about several tens of nm or less, the same applies hereinafter), in other words, a quantum box (electronic box). , A 0-dimensional electron system in which charged bodies such as excitons are three-dimensionally confined in a minute region of several tens of nm or less), a 1-dimensional polymer with a uniform alignment direction, a 1-dimensional electric conductor or a thin linear cluster, in other words Then quantum wires (charged substances such as electrons and excitons are two-dimensionally confined in a minute region of several tens nm or less 1
Dimensional electronic system), etc.
Then, the present invention relates to a light emitting device using these.

[0002]

2. Description of the Related Art In recent years, photoelectron devices using quantum well structures such as optical modulators, bistable optical devices, and quantum well lasers have been actively developed.

By using a quantum well structure (two-dimensional electron system), for example, in the case of a quantum well laser, as compared with a normal double heterojunction laser, (1) increase in differential gain and (2) relaxation oscillation frequency The characteristics have been improved by increasing, (3) decreasing the spectral line width, and the like.

Further, the two-dimensional electron system is further reduced in dimension, that is, quantum wires (one-dimensional electron system) and quantum boxes (0
Attempts have been made to further improve the characteristics of the optoelectronic device or to construct a device based on a new physical phenomenon by realizing a dimensional electron system.

For example, if a quantum box laser is realized,
(1) reduction of threshold current, (2) relaxation of temperature dependence of threshold current, (3) further improvement of characteristics of items (1) to (3) described in the quantum well laser, etc. Be expected.

These situations are, for example, "solid state physics".
(Yasuhiko Arakawa, Vol. 22, No. 2, p. 71 (1987))
It is described in.

On the other hand, from the viewpoint of optical nonlinearity, quantum wires and quantum boxes are drawing attention.

The optical non-linearity is usually classified by the non-linear susceptibility, and a material having a high second-order non-linear susceptibility (proportional constant of the non-linear polarization component proportional to the square of the applied electric field) is the second.
Materials with high harmonic generation (SHG), optical mixing or optical parametric oscillation, and high third-order nonlinear susceptibility (proportional constant of nonlinear polarization component proportional to the cube of the applied electric field) generate the third harmonic. (THG), non-linear refractive index change, stimulated Raman effect, etc. are greatly utilized in application to optoelectronic devices.

Such optical nonlinearity is increased by using a quantum well structure (two-dimensional electron system), a quantum wire (one-dimensional electron system) or a quantum box (0-dimensional electron system) rather than a bulk crystal. To do.

For example, the third-order nonlinear susceptibility of a quantum box is
Although it depends on the constituent materials and dimensions, it is expected to be 200 to 8000 times larger than that of the bulk crystal.

Even if the material contains only about 1% of quantum boxes, the third-order nonlinear susceptibility becomes 2 to 80 times.

Further, in the quantum box, the change in energy state due to the quantum confinement (quantum size) effect is remarkable, and in the case of a light emitting element, the emission spectrum width is reduced (monochromaticity is increased) and the photon energy is increased. This has a great effect on the increase (shortening of the emission wavelength).

These circumstances are described, for example, in "Nonlinear Optoelectronics in Latest Patents-From Materials to Devices-" (Takao Fushimi, published by Kogyo Kenkyukai Co., Ltd. (199).
2)), or "Journal of the Physical Society of Japan" (Toshihiro Arai, Vol. 44, No. 4, p. 252 (1989)).

By the way, many optoelectronic devices including the quantum wire or quantum box applications use semiconductor materials.
It is composed of a group III-V or group II-VI direct transition semiconductor, and indirect transition semiconductors such as silicon crystals are rarely used except for solar cells.

It is said that it is difficult to manufacture an efficient optoelectronic device (especially a light emitting device) in an indirect transition type semiconductor because it requires interposition of lattice vibration (phonon) for absorption and emission of light. It is due to the fact.

However, in recent years, the use of quantum wires or quantum boxes exhibiting the quantum confinement effect has revealed the possibility of obtaining an efficient light-emitting device even if an indirect transition semiconductor is used.

These situations are described, for example, in "Applied".
Physics Letters "(LTCanham, Applied Physi
cs Letters Vol.57, No.10, 1046 (1990)).

The advantages in realizing an optoelectronic device (especially a light emitting device) by using an indirect transition type semiconductor will be described below.

For example, silicon, which constitutes a typical indirect transition type semiconductor, is different from III-V group or II-VI group semiconductor constituent substances, and is present in large amounts on the earth (that is, it is inexpensive) and is safe. Is high (that is, it is not toxic) and is a central substance that constitutes an electronic device such as an IC or VLSI.

That is, if it is possible to realize a light emitting element having characteristics comparable to those of conventional ones by using silicon,
A great effect is brought about in terms of price, environmental friendliness, and compatibility when considering integration with electronic devices.

As described above, the scope and expectation of quantum wire or quantum box applications for optoelectronic devices, including the use of silicon materials, are great.

In particular, by obtaining quantum wires or quantum boxes with uniform shapes and dimensions at high density, it is possible to obtain a light emitting element having strong monochromaticity and high luminous efficiency, a nonlinear optical element having high optical nonlinearity, and the like.

Techniques that have hitherto been attempted to realize these include those using a lithographic method (that is, fabrication of quantum wires and quantum boxes), heat treatment of mixed crystal substances or metal (or semiconductor) particle-dispersed glass, etc. To precipitate clusters (that is, the production of quantum boxes), direct generation of clusters by the dry process (that is, production of quantum boxes), or one-dimensional polymers (that is, the production of quantum wires), and porous silicon Material utilization (that is, utilization of quantum wire and / or quantum box effect) and the like can be raised.

The first conventional technique using the lithographic technique will be described below. Normal quantum well structure (two-dimensional electron system)
Is epitaxially grown on the substrate, and then a mask pattern is transferred by a normal photolithography technique. The minimum horizontal size obtained at this time is 0.3-1 μm.
It is a degree.

After that, the quantum well layer is etched by wet etching to separate the substrate in the horizontal direction (quantization into thin lines or quantum boxes), and the side dimension is used to reduce the horizontal dimension. , To control the size of the horizontal quantum wires or quantum boxes.

As a similar second conventional technique, after a normal quantum well structure (two-dimensional electron system) is epitaxially grown on a substrate, (1) a mask by X-ray lithography or focused electron (or ion) beam lithography is used. Quantum thinning or quantum boxing is performed by pattern transfer and dry etching, or (2) quantum thinning or quantum boxing is performed by simultaneously performing lithography and etching using a focused ion beam. is there.

A third conventional technique by heat treatment of a mixed crystal substance is, for example, "Applied Physics Letters" (Y. Maeda et al., Applied Physics Letters Vol.
59, No. 24, 3168 (1991)).

First, Ge, by a high frequency (RF) magnetron sputtering method using a silicon oxide (SiO ₂ ) target on which a germanium (Ge) chip is arranged,
A mixed crystal material of Si and O is deposited on a Si substrate.

Next, heat treatment (800 ° C., 30 minutes) is performed to obtain Ge clusters (microcrystals, average particle size: 6 nm) embedded in SiO ₂ glass.

As a result, the peak wavelength is 5 at 570 nm.
At room temperature, visible light emission having a spectrum extending from 00 to 700 nm is obtained.

In the fourth conventional technique by heat treatment of metal (or semiconductor) particle-dispersed glass, diffusion, ion exchange, ion implantation or the like is usually used for particle dispersion.
It should be noted that this technique has been widely used in the past as a method of manufacturing a nonlinear optical material.

A fifth conventional technique relating to the direct generation of clusters by a dry process is, for example, Japanese Patent Laid-Open No.
There is a method described in Japanese Patent Publication No. 65930.

This conventional example will be described below with reference to the schematic view of the conventional manufacturing apparatus shown in FIG.

Microwave of gas gas (2.45 GHz)
From a nozzle 502 of a cluster (ultrafine particle) source 501 utilizing excitation, a semiconductor (S
i) Generate a cluster (ultrafine particle) beam 503.

On the other hand, a nozzle 505 of a similar cluster source 504 generates an insulator (SiO ₂ ) cluster (ultrafine particle) beam 506 having a particle size equal to or larger than the Si cluster.

By irradiating the substrate 507 with both cluster beams 503 and 506, a cluster formed by mixing and depositing semiconductor clusters (ultrafine particles) 508 and insulator clusters (ultrafine particles) 509 as shown in FIG. A (ultrafine particle) film 510 is produced.

In the cluster film 510, an optical absorption spectrum suggesting the quantum confinement effect is obtained.

The sixth prior art relating to one-dimensional polymers as quantum wires is described in, for example, "Surface Science" (Nobuo Matsumoto, Vol. 13, No. 4, page 219 (1992)). There is.

Among them, the one-dimensional polymer obtained by chemical synthesis is a one-dimensional linear array polysilane: (R ¹ R ² Si) _n.
Here, R ¹ and R ² are organic groups such as an alkyl group such as a methyl group and an ethyl group. Specifically, a dichlorosilane derivative having two organic groups and two chlorine groups:
R ¹ R ² SiCl ₂ is used as a raw material molecule.

First, an organic solvent such as toluene is put in a flask, metallic sodium (Na) is melted by heating under reflux in an argon (Ar) atmosphere, and the raw material molecules are dropped while stirring. When the reaction is carried out for several hours in this state, white one-dimensional linear array polysilane is deposited.

A schematic diagram of the chemical synthesis of the present polysilane is shown in FIG.
Shown in. The use of the seventh prior art porous silicon material has been extensively studied for several years.

This is basically a single crystal silicon (Si).
It is obtained by anodizing the surface of a substrate in a hydrogen fluoride-based solution, and has so far produced a wavelength of 700 (red) to 45.
A large number of emission in the visible region of 0 nm (blue) has been confirmed.

In addition to photoluminescence, confirmation of light emission characteristics by current injection has been conducted, and attempts have been made to manufacture current injection type light emitting devices (for example, LEDs).

The structure and light emitting mechanism of the light emitting layer in porous Si are
Although it has not been clarified in detail, the quantum layer is
A microcrystal corresponding to a line or a quantum box, for example, an oxide layer (S
iO ₂) Covered with Si (semiconductor) region or its field
Planes, that is, quantum confinement regions are densely present,
A charged body confined in a chain is bound to the k-conservative transition selection rule
Light emission mechanism that light emission occurs because it is not
Is considered as one theory.

These conditions are described, for example, in "Research Report on Applied Electronic Property Subcommittee" (published by Japan Society of Applied Physics, No. 446 (1992)), or "Nikkei Microdevice".
(Nikkei BP, May issue, page 15 (1993)).

[0046]

In the case of the first and second prior arts, the minimum horizontal dimension that can be obtained is at most 10n.
It is about m. In addition, although the first conventional technique is simple in that it uses a normal process technique, it is almost impossible to stably obtain a dimension as designed due to the use of wet etching. Since only one quantum wire or quantum box can be obtained in the range of several hundreds of nm, there is a limit to high density.

In the case of the third and fourth prior arts, since the thermal equilibrium process is used, it is expected that a dense cluster-embedded structure with stable photoelectron characteristics will be manufactured, but control exceeding the thermodynamic natural law is expected. Is impossible in principle.
That is, there is a limit to high density embedding of clusters, control of particle size and particle size distribution, and the like. For example, the embedding density is usually said to be up to several percent. Also, the fact that the width of the particle size distribution cannot be narrowed is as follows:
This leads to an increase in the emission spectrum width (a decrease in monochromaticity).

In the cluster (ultrafine particle) film manufactured by the example of the fifth prior art, since the semiconductor ultrafine particles and the insulator ultrafine particles are mixed and deposited, the voids as shown in FIG. 18 are obtained. 511 is likely to occur, and problems remain in terms of stability of photoelectron characteristics, life, and the like. Also, no consideration is given to particle size control.

The method of manufacturing a one-dimensional polymer (quantum wire) of the sixth example of the prior art is simple, but the arrangement direction of the one-dimensional polymer, the length of each polymer, etc. are completely random. A problem remains in using it as the quantum wire for the optoelectronic device.

In the case of the seventh prior art, the visible light emitting material has a feature that it can be easily manufactured using silicon crystals, but at present, the characteristics change sensitively depending on the manufacturing conditions and the like.
Further, there is a problem that the change (deterioration) with time is remarkable.

When manufacturing a current injection type light emitting device, in order to obtain a device having high emission efficiency and stable characteristics, a P type (charged body is a hole) layer on one of both surfaces of the light emitting layer,
On the other hand, it is necessary to form an N-type (electron is a charged body) semiconductor electrically conductive layer. However, in the application of the seventh conventional technique, the light emitting layer is a porous layer, and thus the electrically conductive layer having good interface characteristics is used. Layer formation is difficult.

The present invention solves various problems of the prior art described above, and includes clusters (quantum boxes) having a uniform grain size and grain size distribution, and dense and high-density embedding thereof, or It enables the production of a heterogeneous material coating, a highly oriented one-dimensional polymer, a one-dimensional electric conductor or a thin wire cluster (quantum wire), and in particular, a light emitting device having strong monochromaticity and high luminous efficiency, Provided are a method for manufacturing a microstructured material, a manufacturing apparatus, and a light-emitting element, which bring great effects to the manufacture of a photoelectronic element such as a highly nonlinear nonlinear optical element and a light-emitting element using an indirect transition type semiconductor material such as silicon crystal. The purpose is to do.

[0053]

In order to achieve the above object, the first aspect of the present invention provides a first step of forming clusters and a method of converting raw material particles of a substance having a band gap larger than that of the clusters into atoms and molecules. It has a configuration in which a second process for producing in a state is independently provided, and both processes are performed simultaneously or alternately.

The second aspect of the present invention is to provide a solid target, a means for irradiating the solid target with laser light, a means for introducing a gas, and a means for introducing light for decomposing the gas, in a container that can be evacuated. And a substrate holder arranged at a position where both the cluster generated from the target and the substance generated by photolysis are deposited.

The third aspect of the present invention has a structure in which the step of chopping the generated clusters in synchronism with the laser pulse and selecting the particle size of the generated clusters is provided.

A fourth aspect of the present invention is provided with a solid target, a means for irradiating the solid target with pulsed laser light, and a means for chopping the generated clusters in synchronization with the laser pulse, in a container that can be evacuated. It has such a configuration.

In a fifth aspect of the present invention, a solid target, a means for irradiating the solid target with pulsed laser light, and a substrate on which clusters are deposited are rotated or reciprocated in synchronization with a laser pulse in a container that can be evacuated. It has a structure such that it is provided with a means for causing it.

In the sixth aspect of the present invention, a step of forming clusters, a step of modifying the surface of the formed clusters with a material having a larger band gap, or a step of coating with the material, and a step of forming the clusters or after the modification / coating treatment It has a configuration including a step of mass-separating clusters.

In a seventh aspect of the present invention, means for forming clusters, means for modifying the surface of the formed clusters to a material having a larger band gap or coating with the material, and means for forming the clusters or after the modification / coating treatment. It has a configuration in which a means for mass-separating the clusters is provided.

In the eighth aspect of the present invention, a high-concentration cluster raw material active particle is generated by photolysis of gas molecules at a laser beam focusing point, and the substrate is placed at a position away from the focusing point and directly irradiated with the laser beam. It has a structure in which clusters are deposited on top.

According to a ninth aspect of the present invention, a plane electrode in which a plurality of needles having the same shape and size are arranged in parallel is arranged close to and parallel to the substrate surface, and an electric field is applied between the tip of each needle and the substrate surface. And the first step on the substrate surface after the first step.
Second step of depositing the first substance, a third step of removing the first substance, and a second substance having a larger band gap than the first substance on the surface of the substrate after the third step. It has a configuration such as including the fourth step.

In a tenth aspect of the present invention, a substrate holder, a planar electrode having a plurality of needles having the same shape and size arranged in parallel, and a planar electrode provided on the substrate surface of the substrate holder are provided in a container capable of being evacuated. It comprises a means for arranging close and parallel to each other, one or a plurality of means for depositing a plurality of substances on the surface of the substrate, and a means for removing at least one of the substances.

In the eleventh aspect of the present invention, a substrate holder is provided in each of a plurality of containers that can be evacuated, and a planar electrode in which a plurality of needles having the same shape and size are arranged in parallel in any of the plurality of containers, A means for arranging the planar electrodes close to and parallel to the surface of the substrate placed on the substrate holder; one or a plurality of means for depositing a plurality of substances on the surface of the substrate; and a means for removing at least one of the substances, A plurality of containers are connected via a gate valve, and a means for transporting the substrate between the containers is provided.

The twelfth aspect of the present invention is such that an electric field is applied in one direction parallel to the substrate surface, and one-dimensional polymer raw material molecules or clusters whose surface is coated with a different substance are supplied onto the substrate surface. have.

In the thirteenth aspect of the present invention, an electric field is applied in the running direction of steps provided on the surface of a substrate, and a one-dimensional electric conductor containing a raw material particle substance supplied from the gas phase in its composition is run in the running direction of steps. It has a structure of growing along.

The fourteenth aspect of the present invention is directed to a substrate surface which is slightly inclined from a stable crystal plane and has a high density of terraces and steps.
The structure is such that a silicon atom is included in the composition and a one-dimensional electric conductor extending along the steps is provided.

The fifteenth aspect of the present invention is a light emitting source comprising a fine structure material in which a cluster, a fine line cluster or a one-dimensional polymer is embedded in a substance having a larger band gap, or a porous material originating from an indirect transition type semiconductor substance. Used for
It has a configuration in which a cold cathode is used as an excitation source.

[0068]

With the above structure, the first aspect of the present invention independently includes the first step and the second step, and it is possible to independently control the production amount of clusters and embedded material raw material particles per unit time. Therefore, the density of embedded clusters can be easily controlled. In addition, since the raw material particles in the second step are in the atomic / molecular state, and the first step and the second step are performed simultaneously or alternately repeatedly, clusters are formed without forming a gap in the periphery. , Can be embedded closely.

The second aspect of the present invention is provided with both means for producing clusters by laser ablation and means for producing raw material particles of an embedded substance in an atomic / molecular state by photolysis, so that the fine particles according to the first aspect of the present invention can be obtained. The production of the structural material can be realized with the same equipment and only by a photoexcitation process. Further, in the means by laser ablation, since the generated cluster particle size and particle size distribution can be controlled by controlling the irradiation laser light density, the particle size and particle size distribution of embedded clusters can be easily controlled.

Furthermore, the first and second inventions basically do not require a thermal equilibrium process of precipitating clusters by heat treatment of a mixed crystal substance or the like deposited on a substrate by an evaporation method. Compared with the above, higher density cluster embedding is possible and the controllability of particle size and particle size distribution is improved.

Since the third and fourth inventions are provided with a step or means for selecting the particle size of the produced cluster by chopping, the particle size of the cluster produced by laser ablation can be controlled more finely. A sharper particle size distribution can be obtained. Furthermore, since chopping itself is performed in synchronization with the laser pulse, accurate control becomes easy.

Since the fifth aspect of the present invention is provided with means for rotating or reciprocating the substrate in synchronization with the laser pulse, finer control of the grain size of clusters produced by laser ablation can be performed accurately and easily. A sharper particle size distribution can be obtained.

The sixth aspect of the present invention has a step of modifying (or coating) a different substance immediately after the formation of clusters, and therefore has a good interface characteristic with no gaps or impurities and has a larger band gap. A cluster covered with a substance, in other words, a quantum box having a high quantum confinement effect can be realized. In addition, it is possible to provide a plurality of cluster groups having a sharper particle size distribution by selecting the particle size in the mass separation step.

The seventh aspect of the present invention can realize the production of the microstructured material according to the sixth aspect of the present invention in the same apparatus.

In the eighth aspect of the present invention, active particles having a high concentration are generated at the laser beam converging point, form clusters by mutual self-bonding, and increase the particle size, while separating from the converging point and leaving the laser beam. Reaches a substrate arranged at a position where the is directly irradiated. That is, in the eighth aspect of the present invention, clusters can be generated only by a photochemical vapor phase reaction, and the distance between the active particle generating portion and the substrate can be easily changed by moving the focusing point or the substrate in the optical axis direction. Therefore, the cluster grain size deposited on the substrate can be controlled to a desired value. Further, as compared with the case where the laser beam irradiation direction is the horizontal direction above the substrate, it is easier to move the converging point due to the change in the distance, and the laser beam or the substrate scans to obtain a uniform grain size and grain size distribution. It is also possible to deposit clusters having a uniform distribution on the surface of a large-area substrate.

The ninth aspect of the present invention first uses the electric field applied to the minute space between the tips of a plurality of needles arranged in parallel on the plane electrode and having the same shape and size and the substrate surface.
By the process of (1), it is possible to form a plurality of fine holes (hole diameter: about several tens nm or less) of uniform shape and size on the substrate surface. Here, since the shape and size of the micropores can be controlled by the approach distance between the needle and the substrate surface and the electric field strength, the deposition of the first substance on the substrate surface after the formation of the micropores (second step) and removal (second step). In addition to the third step) and the deposition of the second material (fourth step), clusters of the first material having a desired shape and size can be embedded in the micropores.
Further, by repeating the first to fourth steps, 3
It is possible to realize a microstructured material in which the clusters that are dimensionally distributed are embedded with a second substance. Regarding the embedding density of the clusters, the density in the horizontal direction on the substrate surface is determined by the arrangement density of the needles on the planar electrode, and the density in the vertical direction is determined by the deposited film thickness of the second substance in the fourth step. That is, the embedding density can be flexibly controlled independently of the cluster shape / dimension control, and the embedding density can be made anisotropic.

The tenth and eleventh inventions can realize the production of the microstructured material according to the ninth invention in the same apparatus. In a tenth aspect of the present invention, a means for forming a plurality of micropores (pore diameter: about several tens nm or less) on the substrate surface, a means for depositing a substance, and a means for removing a substance are provided in one container. Therefore, the device structure is simplified. In addition, since the substrate is not transported between the processes performed by using the respective means, the process switching time is shortened. This is a great advantage when the first to fourth steps of the ninth aspect of the present invention are repeatedly performed to manufacture a microstructured material in which three-dimensionally distributed clusters are embedded with the second substance. . On the other hand, in the eleventh aspect of the present invention, since the respective means are provided in independent containers, there is no possibility that the steps performed by using the respective means influence each other. Further, maintenance / maintenance can be performed independently for each means, which brings about great convenience in a vacuum apparatus equipped with means having different functions.

The twelfth aspect of the present invention is to apply an electric field in one direction parallel to the substrate surface while supplying one-dimensional polymer raw material molecules or clusters whose surface is coated with a different substance onto the substrate surface. Therefore, electric polarization in the same direction occurs in all the raw material molecules or clusters adsorbed on the substrate surface, and the raw material molecules or clusters are bound to each other in the part where +/- polarity is generated. As the molecules or fine linear clusters grow, polarization also occurs in the growing one-dimensional macromolecules or fine linear clusters, so that the orientation directions of these one-dimensional macromolecules or fine linear clusters can be matched. In other words, it is possible to easily manufacture a high-density quantum thin wire having the same array direction.

In the thirteenth aspect of the present invention, the terrace &
Since steps are provided, particles such as atoms, molecules, or clusters adsorbed from the gas phase on the substrate surface stay on the terrace for a certain time, but reach the step by surface diffusion, and along the running direction on the step. Will be arranged (linear array). This is because the particles are usually more stable on the steps than on the terraces. On the other hand, an electric field is applied in the direction in which the steps run, and due to the action of electric polarization generated in the particles, the linearly arranged particles are bound to each other, so that a one-dimensional electric conductor can be grown. it can. That is, the 13th aspect of the present invention is capable of growing a one-dimensional electric conductor which is arranged in conformity with the running direction of steps by supplying particles such as atoms, molecules or clusters from the gas phase.

The fourteenth aspect of the present invention is to obtain a light emitting device made of a silicon material by using a one-dimensional electric conductor containing silicon atoms in its composition, that is, by utilizing the quantum confinement effect in a quantum wire. be able to. In addition, since the one-dimensional electric conductor extends along the steps of terraces and steps caused by a slight inclination from the stable crystal plane, the arrangement direction is controlled with atomic level accuracy, and the 1-dimensional electric conductor is arranged. The density of the three-dimensional electric conductor can be easily controlled by controlling the fine tilt angle. These contribute to the realization of a light emitting device having strong monochromaticity and high luminous efficiency. Furthermore, the light emitting device of the fourteenth invention can be easily realized by the manufacturing method of the thirteenth invention.

The fifteenth invention of the present invention is to provide a light emitting source comprising a fine structure material in which a cluster, a fine line cluster or a one-dimensional polymer is embedded in a material having a larger band gap or a porous material originating from an indirect transition type semiconductor material. Therefore, a light emitting device utilizing the quantum confinement effect of a quantum box or a quantum wire can be realized. On the other hand, since the cold cathode is used as the excitation source, unlike the current injection type light emitting device, it is not necessary to further form P-type and N-type electrically conductive layers on the material used for the light emitting source, The structure of the light source is simplified. Further, it is possible to manufacture the light emitting source and the excitation source independently, and in addition, the light emitting source can be manufactured with high quality by using the manufacturing method or the manufacturing apparatus of the first to thirteenth aspects of the present invention. Since the excitation source is a cold cathode that is generally present in the world, a high quality light emitting device can be easily manufactured. Further, it can be downsized and integrated similarly to the current injection type element.

[0082]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of one embodiment of the method for producing a microstructured material of the present invention.

FIG. 1 shows a group of clusters 101 formed in the first step and a group of raw material particles (atomic / molecular state) 103 of a substance 102 having a larger band gap than the cluster 101 formed in the second step, simultaneously. Alternately board 1
It is shown that the cluster 101 is embedded in the substance 102 by supplying the substance 101 to the substance 04.

The first step for forming the cluster 101 is, for example, laser ablation.
: ablative photodecomposition).

This is done by irradiating the surface of the solid material with a laser beam having a photon energy higher than the binding energy between the constituent atoms of the solid material or the intermolecular bond energy, or high energy density at which high density multiphoton absorption occurs. This is a process of directly breaking the bond and exploding (removing) the atoms / molecules constituting the solid material as particles, and in recent years, it is a method that has been used for thin film production or etching process.

Here, the morphology of the generated particles can be changed from clusters to molecules and molecules to atoms depending on the irradiation laser light density (generally, the higher the irradiation laser light density, the number of constituent atoms of the particles). Less).

Therefore, by controlling the irradiation laser light density by using laser ablation, it is possible to control the particle size of the generated clusters and the particle size distribution. Also,
The amount of produced particles can be controlled by controlling the total amount of irradiation laser light.

In addition to the above, in the first step, control of particle size and particle size distribution is more complicated than in laser ablation.
Other types of processes that produce cluster ion beams can also be used.

On the other hand, in the second step of producing the raw material particles 103, for example, photochemical vapor deposition (photochemical vapor deposition) is performed.
vapor deposition) is used.

This has been recently used as a method for depositing a thin film by active particles generated by photolysis of a reactive source gas.

This method has a feature that a thin film having a homogeneous and continuous property (for example, crystal grain agglomerate-free) can be easily obtained.

In this sense, thermal or electron beam evaporation, plasma or thermochemical vapor deposition may be used, but photochemical vapor deposition is a non-thermal equilibrium / low temperature process, so this method is used. As a result, in combination with the first step using the laser ablation or cluster ion beam generation process described above, the entire one embodiment of the manufacturing method of the present invention becomes a non-thermal equilibrium process, and the controllability of the embedding density, the particle size and the particle size distribution is controlled. Will increase.

Further, since it is a non-plasma process, there is no fear of plasma damage to the interface between the cluster and the embedded material.

Laser ablation may be used in the second step. In this case, the irradiation laser beam intensity and the like are controlled, and the generated particles are supplied onto the substrate 104 in the atomic or molecular state.

It is also possible to use laser ablation using ultraviolet laser light or photochemical vapor deposition in both the first and second steps.

As a result, it becomes possible to perform the first and second steps with only a single laser beam, and the whole manufacturing method is simplified.

FIG. 2 is a schematic view of an embodiment of an apparatus for producing a microstructured material of the present invention. In FIG. 2, laser light introduction windows 105 and 106 and gas introduction nozzles 107 and 1 are provided.
A single crystal silicon (Si) solid target 11 as a cluster raw material
0 and the substrate holder 111 are installed.

Here, the target 110 is arranged so that the surface of the target 110 is irradiated with the laser light (photon energy: hν ₁ ) 112 introduced through the window 105. The substrate holder 111 is the target 1
The particles ablated from 10 are arranged so that the surface of the holder 111 is irradiated with the particles.

The window 106 is also introduced through this.
Laser light (photon energy: hν ₂) 113, hold
Arranged so that it can directly irradiate the surface of the dar 111.
Has been.

However, the window 106 receives the laser light 113,
To pass horizontally near the surface of the holder 111,
That is, near the surface of the holder 111 (at a distance of at most ten and several c
It may be arranged so that it can be irradiated so as to pass through about m).

Furthermore, the nozzles 107 and 108 are positioned so that the gas introduced from them can reach the surface of the substrate 114 by spraying or diffusing directly or in the state of being photodecomposed into active particles by the laser beam 113. To place.

In the case of producing a microstructured material, such as a single crystal Si cluster embedded in silicon oxide (SiO ₂ ), with the production apparatus having the above configuration, the following is performed.

First, the substrate 114 is placed on the holder 111. The single crystal Si clusters are supplied onto the surface of the substrate 114 by ablation of the single crystal silicon (Si) solid target 110 with the laser light 112.

As the laser beam 112, it is desirable that the photon energy: hν ₁ is high enough to directly break the single crystal Si interatomic bond having the binding energy: 1.8 eV, and the absorption coefficient per unit deposition is high. The higher the ablation efficiency, the higher the hν ₁ is.

Specifically, taking into account the practicality of the laser itself, the second harmonic (hν ₁ = 2.3e) of the YAG laser is also taken into consideration.
V), XeCl (hν ₁ = 4.0 eV), KrF (hν ₁
= 5.0 eV) or ArF excimer laser (hν ₁
= 6.4 eV) and other high power short wavelength laser light is increased.

The grain size and grain size distribution of the clusters to be supplied onto the surface of the substrate 114 are controlled by the irradiation density of the laser beam 112, and the cluster supply amount per unit time is controlled by the total irradiation light amount.

On the other hand, in the container 109, the nozzles 107, 1
08, disilane gas (Si ₂ H ₆ ) and laughing gas (N ₂ O), or oxygen gas (O ₂ ) at such a low concentration that direct reaction with Si ₂ H ₆ does not occur are introduced therein. , ArF excimer laser light (h
Irradiation with ν ₂ = 6.4 eV).

The light of hν ₂ = 6.4 eV directly decomposes Si ₂ H ₆ gas molecules, so that the reaction between the generated Si active particles and the oxygen-based particles (or photo-decomposed oxygen-based active particles) is performed. , A SiO ₂ thin film is deposited on the surface of the substrate 114.

The deposition rate is controlled by the gas supply amount (or gas pressure) per unit time or the laser beam 113 irradiation amount.

As described above, it is possible to manufacture the fine structure material in which the cluster embedding density, particle size and particle size distribution are controlled.

Also in this embodiment, by using the ArF excimer laser for the ablation,
Only one laser light source is required.

FIG. 3 and FIG. 4 are process diagrams of one embodiment of the method for producing a microstructured material of the present invention.

In FIG. 3A, a row of the cluster group 115 having a particle size distribution of A is shown.

Each cluster group is generated and made to fly by laser ablation using a pulse laser. In addition,
A single pulse of laser produces one of the clusters.

In general, in such a cluster group,
Smaller clusters are located at the top of the group and come flying.

By utilizing this property and chopping each cluster group in synchronization with the laser pulse, it is possible to select only clusters having a desired particle size in the cluster group.

Specifically, the chopping frequency is made to match the repetition frequency of the pulse laser, or an integral multiple of the repetition frequency is set as the chopping frequency, and chopping is performed with an appropriate phase delay. The particle size to be selected can be controlled by changing the value of the phase delay.

FIG. 3B shows a row of the cluster group 116 having a particle size distribution B sharper than the distribution A after selection.

FIG. 4 is a schematic view of one embodiment of an apparatus for producing a microstructured material according to the present invention, which utilizes such a principle.

In FIG. 4, a container 117 capable of being evacuated.
Inside the solid target 118, which is a cluster raw material,
A substrate holder 119 and a rotary disk-type chopper 121 with a void 120 cut out in a part thereof are provided, and a pulse laser light source 122 is provided outside thereof.

Then, the container 117 is irradiated with the pulsed laser light (photon energy: hν ₁ ) 123 from the pulsed laser light source 122 so that the surface of the target 118 is irradiated with the pulsed laser light.
A laser beam introduction window 124 arranged in the above is provided.

The cluster group 125 ablated from the target 118 by a single pulse of the laser light 123.
Flies to the surface of the chopper 121 that is rotated at a rotation frequency: nf _C1 that matches or is an integral multiple of the repetition frequency: f _L of the laser light 123.

Here, the particle size can be selected by making the time t ₁ when the cluster group should pass through the chopper and the time t ₂ when the void 120 crosses the cluster group satisfy the relationship of t ₁ > t ₂ .

The time ratio: t₁/ T₂The larger the
The particle size distribution afterwards becomes sharp. t ₁/ T₂The size of
Change the size of the air gap 120 or the chopper rotation frequency
Control. The particle size is f_LAnd f_C1With
Controlled by changing the value of the phase delay
It

From the above, cluster group 1 after particle size selection
26 are sequentially deposited on the substrate placed on the substrate holder 119.

FIG. 5 is a schematic view of one embodiment of the apparatus for producing a microstructured material of the present invention, which is based on the same principle as that of the third embodiment.

In FIG. 5, a container 127 capable of being evacuated.
In the inside, a solid target 128, which is a cluster raw material,
A substrate holder 129 and a means for chopping the cluster group 130 described below are installed.

This chopping means uses so-called mass separation, and in this embodiment, an electron gun 131 for ionizing each cluster, and an accelerating section 132 for accelerating the speed of each ionized cluster. ,
And an electric field or magnetic field application unit 133 for mass-separating each cluster.

Further, the pulse laser light source 122 is used as the container 1
A pulse laser beam (photon energy: hν ₁ ) 123 from the main light source provided outside the target 27
A laser light introduction window 134 is provided in the container 127 so that the surface of the container is irradiated.

The cluster group 130 ablated from the target 128 by a single pulse of the laser light 123.
After being ionized and accelerated, the laser beam flies to the applying unit 133 which is applying the electric field or magnetic field pulse at the repetition frequency nf _C2 which is the same as the repetition frequency f _L of the laser light 123 or is an integral multiple.

Here, the particle size is selected by setting the time t ₃ for which the acceleration cluster group 135 should pass through the application unit 133 and the applied electric field or magnetic field pulse width t ₄ to have a relationship of t ₃ > t _4. You can

That is, by applying an electric field or a magnetic field to a part of the cluster group, the flying direction of part of the cluster is changed toward the substrate holder 129. The time ratio:
The larger t ₃ / t ₄ is, the sharper the particle size distribution after selection is, and the size of t ₃ / t ₄ is controlled by changing the size of t ₄ . Further, the particle size is controlled by changing the value of the phase delay given between f _L and f _C2 .

The amount of displacement in the flying direction is calculated by the particle size (more precisely, the mass) of the cluster to be selected and the acceleration unit 132.
Since it is determined by the accelerating voltage and the strength of the applied electric field or magnetic field, only the clusters to be selected can be made to fly toward the substrate holder by controlling these physical quantities.

As described above, cluster group 1 after particle size selection
36 are sequentially deposited on the substrate placed on the substrate holder 129.

FIG. 6 (a) shows a schematic view of one embodiment of the apparatus for producing a microstructured material of the present invention, and FIG. 6 (b) has a microstructure produced by the production apparatus of this embodiment. It is a block diagram of an element.

In FIG. 6A, a solid target 1 as a cluster raw material is placed in a container 137 which can be evacuated.
38 and a substrate holder 139 are installed, and the holder 139 has a mechanism capable of rotating at an arbitrary rotation frequency.

Further, the pulsed laser light source 122 is installed outside the container 137, and the laser light introduction window 140 is provided so that the pulsed laser light (photon energy: hν ₁ ) 123 from this light source is irradiated on the surface of the target 138. Container 1
37.

The cluster group 141 ablated from the target 138 by a single pulse of the laser light 123 is
The laser beam 123 flies to the holder 139 which is rotated at the rotation frequency: nf _C3 which is the same as the repetition frequency: f _L or is an integral multiple.

Here, as shown in FIG. 6A, when the holder 139 is a tetrahedron and the substrates are placed on the respective surfaces, the cluster group 141 has a sharper particle size distribution. It is divided into clusters of different types and deposited on each substrate: A, B, C, D in sequence.

In other words, the holder 139 itself chops the cluster group to select the particle size and simultaneously deposit the selected cluster.

Substrates A, B, C, D on which clusters are deposited
FIG. 6B shows an outline of each cross section of FIG.

The average grain size of the deposited clusters decreases in the order of the substrates A, B, C and D.

The holder 139 may be a polyhedron other than the tetrahedron, and in this case, the cluster group is divided and deposited accordingly.

FIG. 7 (a) shows a schematic view of one embodiment of the apparatus for producing a microstructured material of the present invention, and FIG. 7 (b) shows a microstructure produced by the production apparatus of this embodiment. It is a block diagram of an element.

In FIG. 7A, a solid target 1 as a cluster raw material is placed in a container 142 that can be evacuated.
43 and a substrate holder 144 are installed, and the holder 144 has a mechanism capable of reciprocating at an arbitrary frequency.

Further, the pulse laser light source 122 is provided outside the container 142, and the pulse laser light (photon energy: hν ₁ ) 123 from this light source is used as the target 143.
A laser beam introduction window 145 is provided in the container 142 so as to irradiate the surface of the container.

A cluster group 146 ablated from the target 143 by a single pulse of the laser light 123.
Flies to the holder 144 that reciprocates at the frequency: n _{L C4} that is the same as the repetition frequency: f _L of the laser light 123 or is an integral multiple, and is deposited on the substrate placed on the holder 144.

As a result, clusters having different grain types within the grain size distribution range of the cluster group 146 are distributed in the reciprocating direction on the substrate and are sequentially deposited.

In other words, the holder 144 itself chops the cluster group to select the particle size, and at the same time,
We are depositing selected clusters.

An outline of the cross section of the substrate on which the clusters are deposited is shown in FIG. 7 (b). The particle size of the deposited clusters decreases from right to left on the drawing.

As described above, in Examples 3 to 6, in summary, in the cluster group generated / flyed by pulse laser ablation, the smaller the particle size, the more the cluster is located at the head of the group. Using
It means that clusters having a uniform particle shape and particle size distribution generated by ablation are further finely classified to provide clusters having a sharper particle size distribution.

In the method of manufacturing a fine structure material of this embodiment,
First, in the step of forming clusters, for example, laser ablation is used, in which the generated cluster particle size and particle size distribution can be controlled by controlling the irradiation laser light density.

Next, when the generated cluster is composed of, for example, a Si material, the surface of the cluster is easily modified into an SiO ₂ layer having a larger band gap by irradiating with oxygen active particles after the above steps. can do.

Then, in the subsequent mass separation step,
For example, a method of ionizing the modified clusters and separating them by an electric field or a magnetic field, a method using a mechanical chopper, or a method using physical movement of cluster deposition or collection means is used.

By performing the above steps, not only the particle size and particle size distribution are more uniform than in the case where only laser ablation is used, but also a cluster covered with a material layer having a larger band gap can be manufactured. You can do it.

FIG. 8 is a schematic view of an embodiment of an apparatus for producing a microstructured material of the present invention based on the above principle.

In a container 147 capable of being evacuated, a solid target 148 as a cluster raw material, a laser light introducing window 150 arranged at a position where the surface of the target 148 is irradiated with laser light (photon energy: hν ₁ ) 149,
There are provided a source 151 of active particles as a source of surface modification or coating material for the generated clusters, and means for mass separating the generated clusters.

In this embodiment, this mass separation means is an electron gun 15 for ionizing the generated clusters.
2, an accelerating unit 153 for uniformizing and accelerating the speed of ionized clusters, and a magnetic field applying unit 154 for mass-separating the clusters.

In the manufacturing apparatus having the above structure, for example, SiO 2
_When manufacturing single crystal Si clusters coated with _two layers,
It becomes as follows.

First, the target 148 is made of single crystal Si.
To use. Further, as the laser beam 149, the second harmonic wave (hν ₁ = hν ₁ = of the YAG laser is used for the reason described in the description of the first embodiment of the apparatus for manufacturing a fine structure material of the second invention.
2.3 eV), XeCl (hν ₁ = 4.0 eV), Kr
A high power short wavelength laser such as F (hν ₁ = 5.0 eV) or ArF excimer laser (hν ₁ = 6.4 eV) is used.

Then, the laser beam 149 is used to drive the target.
Si clusters 155 generated from 148 are active particles.
The surface of the active particles 156 from the sub-source 151 is S
iO ₂Coated with layer 157.

Specifically, a microwave or radio frequency (RF) excited plasma source or the like is used as the active particle source 151, and Si is irradiated by irradiation of oxygen active particles.
The SiO ₂ layer can be easily coated by oxidizing the cluster surface.

In addition, a silane-based gas (Si _n H _{2n + 2} : n = 1,
2,3, ...) generated in the active particle source 151
Active particles and ground state oxygen-based molecules (eg, O ₂ , N ₂ O
Etc., an amorphous SiO ₂ film may be deposited on the Si clusters.

After that, the Si cluster coated with the SiO ₂ layer is ionized by the electrons 158 emitted from the electron gun 152 and accelerated by the accelerating unit 153 (accelerating voltage: V _a ),
The traveling direction is bent by a static magnetic field (magnetic flux density: B). When the cluster advancing direction is bent by a static magnetic field, its radius of curvature: r is generally expressed by the following equation.

[0165]

[Equation 1]

Here, e is the elementary charge and m is the mass of the cluster. Therefore, since the traveling direction differs depending on the difference in the mass of the clusters, in other words, the difference in the particle size, the particle size can be selected.

Regarding the particle size distribution of clusters,
Particle size distribution A before particle size selection, particle size distribution B ₁ after particle size selection,
B ₂ and B ₃ are shown in FIG.

One embodiment of the method for producing a microstructured material of the present invention will be described with reference to the schematic view of the production apparatus shown in FIG.

In FIG. 9, gas introduction nozzles 159 and 160 arranged at different positions in the vertical direction of the drawing,
A laser light introducing window 161 and a container 163 provided with a substrate 162 and capable of being evacuated are installed.

In such a manufacturing apparatus, first, Si ₂ H ₆ gas is introduced from the nozzle 159 into the container 163, where an ArF excimer laser (photon energy: hν ₂
(= 6.4 eV), the beam is focused and irradiated, and Si active particles having a higher concentration than other regions are exposed to Si ₂ H ₆ near the focusing point.
It is generated by photolysis of gas.

This laser beam irradiation direction is a direction in which the laser beam passes through the active particle generating section 164 and is directly irradiated onto the substrate 162.

Then, the high-concentration Si active particle producing section 164
A desired distance between the substrate and the substrate 162 so that the Si active particles self-bond to each other to form clusters having the desired particle size before reaching the substrate 162 by diffusion.

In other words, the grain size of the clusters deposited on the substrate 162 is controlled by changing the distance between the active particle generating portion and the substrate (for example, by moving the condensing point).

At this time, in order to obtain high-quality clusters, it is important to remove the surrounding impurity gas particles as much as possible in advance. For example, the container 163 is an all-metal sealed container, and Si ₂ H _{6 is used.} Before introducing the gas, treatment such as ultra-high vacuum exhaust (for example, 10 ^-9 Torr or less) is performed.

The laser beam irradiation direction is direct to the substrate 1.
Since the irradiation direction is 62, the focusing point can be moved more easily than in the case where the irradiation direction is the horizontal direction above the substrate 162, and a uniform particle size can be obtained by scanning the laser beam or the substrate. It has an advantage that clusters having a particle size distribution can be deposited in a uniform amount distribution on the surface of a large area substrate.

Further, after the formation of clusters having a desired grain size, that is, by introducing, for example, hydrogen gas 165 from the nozzle 160 into a region closer to the substrate 162, the surface is terminated with hydrogen atoms: terminated. Cluster 166 is obtained.

However, if the gas introduced from the nozzle 160 is an oxygen-based gas, it is possible to obtain a cluster covered with a SiO ₂ layer.

As described above, according to the method for producing a microstructured material of this embodiment, clusters having a controlled particle size and particle size distribution can be provided only by the photochemical vapor phase reaction.

Furthermore, by using the method of manufacturing the microstructured material of Example 1 described above in combination, a gap is not generated in the periphery.
It is also possible to densely embed the above cluster in a different material.

10 and 11 are process diagrams of one embodiment of the method for producing a microstructured material of the present invention.

First, in the first step shown in FIG. 10A, the plane electrode 168 having a plurality of metal needles 167 of the same shape and size arranged in parallel is kept parallel to the plane substrate 169. The high electric field having the same magnitude is applied between the tip of each needle 167 and the surface of the substrate 169.

The approach distance and the magnitude of the electric field strength are determined by the substrate 16
It is assumed that the substance of No. 9 is removed by a desired amount by field evaporation.

In this case, the smaller the approach distance or the larger the electric field strength, the larger the removal amount.
By changing these physical quantities, it is possible to control the shape and size of the holes after the substance is removed.

Therefore, due to evaporation by the applied high electric field, a plurality of holes 170 (hole diameter: hole 167 having the same shape and size determined by the shape and size of the needle 167, the approach distance and the electric field strength).
Can be formed on the surface of the substrate 169.
This state is shown in FIG.

To form the holes 170, a reactive gas is previously introduced between the electrode 168 and the substrate 169, and the tunnel gas generated as a result of the applied electric field causes the reactive gas and the substrate 1 to flow.
69. A method of inducing a chemical reaction with the surface of 69 to perform vapor phase etching may be used.

This is suitable when the substrate 169 is a conductive substance, and for example, when the substrate is a semiconductor such as Si, Cl ₂
For example, a chlorine-based gas such as

Next, as shown in FIG. 10C, a first substance 171 different from this substance is formed on the surface of the substrate 169.
A second step of depositing is deposited.

That is, the raw material particles 172 of the substance 171 are supplied onto the surface of the substrate 169. Specifically, chemical vapor deposition (CVD) method and molecular beam epitaxial growth (M
A method such as a vapor deposition method such as the BE method may be used.

Generally, in the thin film deposition using such a method, it is easier to increase the apparent deposition rate in the groove such as the micropore 170 as compared with the flat surface of the substrate surface. That is, as the deposition progresses, it is possible to fill the groove and flatten the surface of the deposited thin film.

Therefore, as shown in FIG.
At least the first substance 171 is deposited until the surface of the deposited thin film becomes flat.

Next, in a third step shown in FIG. 11B, the first substance deposited in the second step is removed.

Specifically, vapor-phase etching techniques such as photochemical vapor-phase etching, plasma etching, and reactive ion etching may be used.

By using this etching method, the first substance 171 can be removed while maintaining the flatness of the surface of the deposited thin film. The removal is performed until the flat portion of the surface of the substrate 169 is exposed.

Then, in the fourth step shown in FIG. 11C, the second substance having a band gap larger than that of the first substance 171 is used.
Then, the substance 173 is deposited.

Specifically, the same deposition technique as that used in the second step may be used. Note that FIG. 11 (c)
In the figure, 174 indicates a portion composed of raw material particles of the second substance 173. Is.

From the above, by performing the steps shown in FIGS. 10 and 11, the first substance 1 distributed on the two-dimensional plane is obtained.
The uniform particle size cluster 175 composed of 71 is the substrate 1
Embedded between 69 and the second material 173.

Further, the substrate 169 material and the second material 173
By making the same, the fine structure material such as the uniform grain size cluster 175 filled with the substance 173 having a larger band gap is manufactured.

By repeating the steps shown in FIG. 10 and FIG. 11, three-dimensionally distributed uniform particle size clusters 1 are obtained.
A microstructured material is produced such that 75 is filled with a material 173 having a larger band gap.

The shape and size of the cluster 175 are as follows.
It is determined in the first step of forming the hole 170.

Regarding the embedding density of the clusters 175, the density in the lateral direction on the surface of the substrate 169 is the plane electrode 16.
8 is determined by the arrangement density of the needles 167, and the vertical density is determined by the deposited film thickness of the second substance 173 in the fourth step.

As described above, according to the method of manufacturing a fine structure material of this embodiment, the embedding density of the clusters 175 can be controlled flexibly independently of the particle size control, and the embedding density can be made anisotropic. Is. The microstructured material having embedded density anisotropy contributes to the provision of a light emitting element and a non-linear optical element having optical anisotropy.

FIG. 12 is a schematic view of an embodiment of an apparatus for producing a microstructured material according to the present invention. In FIG. 12, a substrate holder 177 and a planar electrode 17 in which a plurality of needles having the same shape and size are arranged in parallel in a container 176 that can be evacuated.
8, a coarse movement mechanism 179 and a fine movement mechanism 180 for moving the plane electrode 178 in parallel to the substrate holder direction, vapor deposition sources 182, 183 for depositing two kinds of substances on the substrate 181 on the substrate holder, and the above two kinds of An ion source 184 is provided for supplying reactive ions for etching when one of the substances is removed by etching.

Reference numeral 185 denotes the flat electrode 178 and the substrate 1.
81 is a power source for applying a high electric field.

The coarse movement mechanism 179 and the fine movement mechanism 18
For 0, for example, a mechanism that is generally used in a scanning tunneling microscope (STM), that is, a mechanical mechanism and a piezoelectric element may be used.

In the manufacturing apparatus of this embodiment, for example, when manufacturing a microstructured material such as Si clusters having a uniform grain size embedded with SiO ₂ , a vapor deposition source 182 or 183 is used.
Since Si and the SiO ₂ raw material are respectively filled in and the etching removal symmetrical substance is Si, the gas supplied into the ion source 184 is a chlorine-based gas that produces chlorine-based ions.

Specifically, the steps carried out by the manufacturing apparatus of this embodiment are steps in which the respective steps of the method for manufacturing a microstructured material of the above embodiments are repeatedly performed.

Then, the second embodiment of the above-mentioned embodiment for carrying out the material deposition.
In the third step and the third step, the vapor deposition sources 182 and 183 shown in FIG. 12 are used, respectively.

FIG. 13 is a schematic view of an embodiment of an apparatus for producing a microstructured material according to the present invention.

In FIG. 13, a container 18 capable of being evacuated.
6, 187 and 188 are coupled via gate valves 189 and 190.

Also, the substrate holder 1 is provided for each container.
91, 192 and 193 are provided.

Further, in the container 186, a plane electrode 194 having a plurality of needles of the same shape and size arranged in parallel, a coarse movement mechanism 195 and a fine movement mechanism 196 for moving the plane electrode 194 in parallel in the substrate holder direction. Is provided.

The coarse movement mechanism 195 and the fine movement mechanism 19
For 6, for example, a mechanism that is generally used in a scanning tunneling microscope (STM), that is, a mechanical mechanism and a piezoelectric element may be used.

Reference numeral 197 denotes the plane electrode 194 and the substrate 1.
It is a power supply for applying a high electric field during 98.

Next, in the container 187, vapor deposition sources 199 and 200 of two kinds of substances are provided.

Further, the container 188 is provided with an ion source 201 for supplying reactive ions for etching when one of the two kinds of substances is removed by etching.

Further, 202 and 203 are substrates 198.
Is a substrate transporting mechanism that enables transporting between the containers and placing them in each substrate holder.

[0217] In the manufacturing apparatus of the present embodiment, for example, in the production of such embedded uniform particle size Si clusters SiO ₂ fine structure material deposition source 199 and 200
Since Si and the SiO ₂ raw material are respectively filled in and the etching removal symmetrical substance is Si, the gas supplied into the ion source 201 is a chlorine-based gas that generates chlorine-based ions.

Specifically, the steps carried out by the manufacturing apparatus of this embodiment are the steps of repeatedly carrying out the respective steps of the method for manufacturing a fine structure material of the ninth embodiment.

Then, the vapor deposition sources 199 and 200 shown in FIG. 13 are used in the second and third steps of Example 9 for depositing the substance, respectively.

FIG. 14 shows a process chart of one embodiment of the method for producing a microstructured material of the present invention. First, in FIG. 14A, an electric field: E (vector amount: this electric field only needs to have a direction component parallel to the substrate surface in one direction parallel to the surface of the substrate 301, and a component perpendicular to the substrate surface). May be present to some extent) and the one-dimensional polymer raw material molecule is supplied.

At this time, as the feedstock molecule, for example, a dichlorosilane derivative: R ¹ R ² SiCl ₂ is used. R ¹ and R ² are organic groups such as an alkyl group such as a methyl group and an ethyl group.

On the other hand, the surface of the substrate 301 on which R ¹ R ² SiCl ₂ molecules are adsorbed is irradiated with at least a first photon group 302 having an energy: hν ₃ sufficient to break the Si—Cl bond, and Causes a photochemical reaction represented by the formula.

[0223]

[Equation 2]

That is, a one-dimensional polymer having R ¹ and R ² as side chains: (R ¹ R ² Si) _n [n is 2 or more] grows.

The step of FIG. 14 (a) may be carried out as a gas phase process in a container which can be evacuated, or as a liquid phase process in an appropriate solvent (for example, toluene or methanol).

[0226] Incidentally, Cl ₂ molecules generated by the reaction of (Equation 2), when the former was evaporated leave Cl ₂ molecules, either as Cl ₂ molecules in the latter case blend as Cl ions in the solvent out of the solvent Evaporate.

Further, when the one-dimensional polymer: (R ¹ R ² Si) _n is produced by a liquid phase process in a solvent, Na atoms are used in the following formula as in the conventional method. The chemistry shown may be used.

[0228]

[Equation 3]

Since the electric field: E (vector amount) is applied on the surface of the substrate 301, the one-dimensional polymer ((R ¹ R ² Si) _n growing on the surface of the substrate 301 is as shown in FIG.
As shown in (a), polarization occurs internally from the stage where n is 2 or 3 and +/- polarity is generated, and
Orient in the direction of the applied electric field.

One-dimensional polymer having sufficient amount of carriers (electrons or holes) to induce / promote the polarization and orientation:
If the (R ¹ R ² Si) is not present in the _n is 1 dimensional polymer: (R ¹ R ² Si) _n higher energy than the band gap of: substrate and the second photon group 303 having hv ₄ 30
1. Irradiate on the surface.

As a result, carriers are generated to induce / promote the polarization and orientation (FIG. 14 (b)).

As described above, FIG. 14 (a) or FIG. 14 (b)
By performing the process shown in ¹And R²With the side chain
One-dimensional polymer: (R¹R²Si)_nThe columns of
It is formed on the plate 301 so as to be oriented in one direction (see FIG. 13).
(C)).

In other words, R ¹ and R ^{2 in the same} direction are aligned.
Thus, the Si quantum wire 304 finished in Step 1 is easily manufactured.

In the above embodiments, it is possible to use the same photon group having a photon energy of hν ₃ and a photon energy of hν ₄ or more. Further, it is desirable that these photon energies are lower than the respective binding energies of Si-R ¹ and Si-R ² .

FIG. 15 shows a process chart of one embodiment of the method for producing a microstructured material of the present invention. First, as shown in FIG. 15A, an electric field in one direction parallel to the surface of the substrate 305:
E (vector amount: the electric field only needs to have a direction component parallel to the substrate surface, and may have a component perpendicular to the substrate surface), and the surface is covered with a different substance: R ^X The formed cluster (for example, Si as a nucleus) 306 is supplied.

Here, R ^X is hydrogen, SiO ₂ or a material layer having a larger band gap than the material serving as the nucleus of the cluster 306.

Such a cluster can be manufactured by the apparatus for manufacturing a fine structure material according to the seventh embodiment or the method for manufacturing a fine structure material according to the eighth embodiment.

In FIG. 15A, the cluster 306 adsorbed on the surface of the substrate 305 is polarized by the electric field: E (vector amount), and + and-polarity is generated.

Therefore, in the portion where this polarity is generated, the clusters 306 are bonded to each other as shown by the portion "A" in FIG. 15 (a) to form the fine linear clusters 307 and the electric field application direction. Orient to.

Electric field: When fine line-shaped clusters are not formed only by E (vector amount), the cluster nuclei and R
^By irradiating the surface of the substrate 305 with the first photon group 308 having an energy: hν ₅ corresponding to the binding energy with ^X , the formation of the fine line clusters 307 is induced and promoted.

If there is not enough carriers (electrons or holes) in the fine linear clusters 307 to induce / promote the polarization and orientation, the energy: h larger than the band gap of the fine linear clusters 307.
A second photon group 309 having ν ₆ is irradiated on the surface of the substrate 305.

As a result, carriers are generated to induce / promote the polarization and orientation (FIG. 15 (b)).

The steps shown in FIG. 15 (a) or FIG. 15 (b) may be carried out as a gas phase process in a container capable of being evacuated, but a liquid phase process may be carried out in an appropriate solvent (eg toluene, methanol). You may go as.

As described above, FIG. 15 (a) or FIG. 15 (b)
By performing the process shown in FIG. 15C, the row of the quantum wires 310 of the cluster nucleus forming material covered with the R ^X layer is oriented in one direction on the substrate 305, as shown in FIG. Formed.

In the above embodiments, it is possible to use the same photon group having a photon energy of hν ₅ and a photon energy of hν ₆ or more.

FIG. 16 shows a process chart of one embodiment of the method for producing a microstructured material of the present invention. In FIG. 16 (a),
The substrate 311 has a stable crystal plane with a surface thereof, for example,
It is slightly tilted from the (100) plane of single crystal silicon.

Therefore, a large number of terraces 312 and steps 313 (width of about several tens nm or less) are present on the surface of the substrate (FIG. 16 (a)).

After that, the longitudinal direction of the terrace 312 is changed to
It is defined as the direction in which step 313 runs.

Further, the electric field E in the running direction of step 313 (vector amount: electric field only needs to have a component in the substrate surface which coincides with the running direction of step 313, and may have a component perpendicular to the substrate surface). It does not matter) is applied.

Electric field: Substrate 311 to which E (vector amount) is applied is a silane-based gas molecule (Si _n H _{2n + 2} : n = 1,2,
3, ...) 314 and energy: hν ₇
Irradiate photon group 315 having

For example, disilane gas (Si ₂ H ₆ ) is used for the gas molecule 314, and ArF excimer laser light (hν ₇ = 6.4 eV) is used for the photon group 315.

Naturally, the gas molecules 314 are on the terrace 3 on the substrate.
It is adsorbed on 12 and stays for a certain period of time, but eventually reaches step 313 due to surface diffusion.

Then, on step 313, the gas molecules 314 are arranged along the running direction (highly oriented linear array).

The reason for this is that the gas molecules 314 are more stable on the steps than on the terraces.

Electric field: Due to the electric polarization generated in the gas molecule by E and the action of the photon group 315, the highly oriented linearly arranged gas molecule 314 is bonded and the one-dimensional electric conductor 316 is grown (FIG. 16). (B)).

Usually, the linear substance grown in this way may be displaced from the step due to thermal motion, especially when the molecular weight is still small at the initial stage of growth. Then, those deviated from the step are difficult to react with the gas molecules because they exist in the terrace region where the gas molecules do not exist at a high density.

However, due to the action of the electric field: E, this is improved in this embodiment, and the linear substance polarized by the electric field: E is stabilized in a form extending in the electric field direction.

That is, this electric field direction is the traveling direction of step 313, and the linear substance which is going to deviate from step 313 due to thermal motion is kept in place.

As described above, according to this embodiment, the terrace and the step are provided on the substrate, and the electric field having the in-plane component of the substrate is provided in the running direction of the step. Can be manufactured (FIG. 16C).

The one-dimensional electric conductor 316 made of a silicon material manufactured in this example is a quantum wire having a width of several nm or less and is a light emitting element material.

That is, as shown in FIG. 16C, a stable crystal plane, for example, (10) of a single crystal silicon is used.
The present invention is a device composed of a surface of the substrate 311 that is slightly inclined from the (0) plane and has terraces and steps at a high density, and a one-dimensional electric conductor that contains silicon atoms in its composition and extends along step 313. It is also an example of the light emitting device.

FIG. 17 is a schematic view showing one embodiment of the light emitting device of the present invention. The light emitting device of this embodiment shown in FIG. 17A is composed of a light emitting source 401 and an excitation source 402.

The light emitting source 401 is basically a substrate 403.
And a porous silicon material formed on the microstructured material produced by any one of the production method or the production apparatus of the present invention of Example 1 to Example 14 or an indirect transition type semiconductor material. The light emitting layer 404 is made of a material.

On the substrate 403, a groove 405 having a depth exposing or near the light emitting layer 404 is formed.
The electron beam 406 is irradiated or absorbed by the light emitting layer 404 directly or efficiently.

The light emitting layer 404 is electrically grounded to prevent charge-up by the irradiation electron beam as much as possible.

On the other hand, the excitation source 402 is a so-called cold cathode, and basically comprises a substrate 407, an emitter 408, an insulating layer 409 and a gate 410 formed on the substrate 407. Then, an electric field (electric field strength: for example, 100 V /
electron beam 40 directed to the light emitting layer 404 by applying
Release 6

Further, for the substrates 403 and 407, for example, single crystal silicon is used. Then, the light emission source 401 and the excitation source 402 may be separately manufactured and then bonded together.

The light emitting device of this example has a thickness of 1 m.
The size can be easily reduced to m or less, and the dimension in the substrate surface inward direction: about several μm × several μm.

Therefore, the light emission source 401 and the excitation source 402
Are manufactured by monolithically arranging them on the same substrate, and then the substrates 411 and 412 are bonded to each other, whereby a large number of light emitting portions 413 are integrated at high density, or a large area thin film type light emission is performed. Element (Fig. 17)
It is also possible to produce (b)).

This brings a great effect to applications such as a thin film display or a parallel type optical information processing system.

As described above, a fine structure material obtained by embedding a cluster, a fine linear cluster, a one-dimensional electric conductor or a one-dimensional polymer in a material having a larger band gap or a porous material originating from an indirect transition type semiconductor material is obtained. It is possible to provide a light-emitting element which is utilized and which does not depend on current injection as described in the problem of the seventh prior art.

[0272]

INDUSTRIAL APPLICABILITY As described above, according to the present invention, a cluster having a uniform particle size and a uniform particle size distribution, its dense and high-density embedding, or a different substance coating, and a one-dimensional height having a high orientation are provided. By providing processes and means for producing molecules, one-dimensional electric conductors, fine linear clusters, etc., it is possible to produce optoelectronic elements such as light-emitting elements having strong monochromaticity and high emission efficiency, and nonlinear optical elements having high nonlinearity. It is possible to realize an excellent method and apparatus for producing a microstructured material, which brings about a great effect.

Furthermore, the present invention can provide a light emitting element or the like which utilizes the fine structure material or the porous material originating from the indirect transition type semiconductor substance and the like and which does not depend on so-called current injection. .

[Brief description of drawings]

FIG. 1 is a schematic view of one embodiment of a method for producing a microstructured material of the present invention.

FIG. 2 is a schematic view of an embodiment of an apparatus for producing a microstructured material of the present invention.

FIG. 3 is a process chart of one embodiment of the method for producing a microstructured material of the present invention.

FIG. 4 is a schematic view of a first embodiment of an apparatus for producing a microstructured material of the present invention.

FIG. 5 is a schematic view of a second embodiment of the apparatus for producing a microstructured material of the present invention.

6 (a) is a schematic view of a first embodiment of an apparatus for producing a microstructured material of the present invention. (B) Substrates A, B, C after clusters are deposited according to the embodiment of FIG. 6 (a). , D cross-sectional schematic

7 (a) is a schematic view of a second embodiment of an apparatus for producing a microstructured material of the fifth invention (b) A cross section of a substrate after clusters are deposited according to the embodiment of FIG. 7 (a). Schematic

FIG. 8 is a schematic view of an embodiment of an apparatus for producing a microstructured material of the present invention.

FIG. 9 is a schematic view of one manufacturing apparatus for embodying one embodiment of the method for manufacturing a microstructured material of the present invention.

FIG. 10 is a process chart of one embodiment of the method for producing a microstructured material of the present invention.

FIG. 11 is a process drawing of one embodiment of the method for producing a microstructured material of the present invention.

FIG. 12 is a schematic view of an embodiment of an apparatus for producing a microstructured material of the present invention.

FIG. 13 is a schematic view of an embodiment of an apparatus for producing a microstructured material of the present invention.

FIG. 14 is a process chart of the first embodiment of the method for producing a microstructured material of the present invention.

FIG. 15 is a process drawing of the second embodiment of the method for producing a microstructured material of the present invention.

FIG. 16 is a process drawing of one embodiment of a method for producing a microstructured material of the present invention, and a schematic view of one embodiment of a one-dimensional electric conductor constituting a light emitting device of the present invention.

FIG. 17 (a) Light emitting device of the present invention (single light emitting device)
(B) Schematic view of one embodiment of the light emitting device of the present invention (when a large number of light emitting parts are two-dimensionally and densely integrated)

FIG. 18 is a schematic view showing an example of a conventional cluster (ultrafine particle) film manufacturing apparatus.

FIG. 19 is a schematic sectional view of a cluster (ultrafine particle) film manufactured by the manufacturing apparatus of FIG.

FIG. 20: Conventional one-dimensional linear array polysilane: (R ¹ R ²
Si) _n [R ¹ and R ² are organic groups such as alkyl groups such as methyl group and ethyl group]

[Explanation of symbols]

101 Cluster 103 Raw Material Particles of Substance 102 (Atomic / Molecular State) 104 Substrate 105 Laser Light Introducing Window 106 Laser Light Introducing Window 107 Gas Injecting Nozzle 108 Gas Injecting Nozzle 109 Vacuum Evacuable Container 110 Solid Target 111 Substrate Holder 114 Substrate 115 Cluster Group 116 Cluster group after particle size selection 117 Vacuum evacuable container 118 Solid target 119 Substrate holder 121 Rotating disc chopper 124 Laser light introduction window 125 Cluster group 126 Cluster group after particle size selection 127 Vacuum evacuable container 128 Solid target 129 Substrate holder 130 Cluster group 133 Pulse electric field or magnetic field application section for mass-separating clusters 134 Laser light introduction window 136 Cluster group after particle size selection 137 Vacuum Evacuable container 138 Solid target 139 Substrate holder 140 Laser light introduction window 141 Cluster group 142 Vacuum evacuable container 143 Solid target 144 Substrate holder 145 Laser light introduction window 146 Cluster group 147 Vacuum evacuable container 148 Solid target 150 Laser light Introduction window 154 Magnetic field application section for mass-separating clusters 155 Si cluster 156 Active particles from active particle source 151 157 SiO ₂ layer 159 Gas introduction nozzle 160 Gas introduction nozzle 161 Laser light introduction window 162 Substrate 163 Evacuable container 164 High-concentration Si active particle generation part 165 Hydrogen gas 166 Cluster whose surface has been terminated by hydrogen atoms 167 Multiple metal needles with the same shape and size 169 Substrate 170 Micropores (pore diameter: 172 Raw material particles of the first substance 171 174 Raw material particles of the second substance 173 175 Uniform particle size clusters 176 Vacuum evacuable container 177 Substrate holder 178 Arranging a plurality of needles having the same shape and size in parallel Flat electrode 181 Substrate 182 Deposition source 183 Deposition source 184 Ion source 186 Vacuum evacuable container 187 Vacuum evacuable container 188 Vacuum evacuable container 191 Substrate holder 192 Substrate holder 193 Substrate holder 194 Multiple needles of equal shape and size Planar electrodes in which the electrodes are arranged in parallel 198 Substrate 199 Deposition source 200 Deposition source 201 Ion source 202 Substrate transport mechanism 203 Substrate transport mechanism 301 Substrate 304 Si quantum wire terminated by R ¹ and R ² 305 Substrate 306 Substrate heterogeneous substance: Cluster covered with R ^X ( As the nucleus, for example, Si) 307 fine linear cluster 310 R ^X layer covered with a cluster 306 nuclear constituent material (for example, Si) quantum wire 311 substrate 312 terrace 313 step 314 silane-based gas molecule (Si _n H _{2n + 2} : n = 1,2,3, ...
) 316 1-dimensional electric conductor 401 Luminescence source 402 Excitation source 403 Substrate 404 Light emitting layer 406 Electron beam 407 Substrate 411 Substrate 412 Substrate 413 Light emitting unit 507 Substrate

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Ken Iwata 3-10-1 Higashisanda, Tama-ku, Kawasaki City, Kanagawa Prefecture Matsushita Giken Co., Ltd.

Claims (25)

[Claims] 1. A first step of forming a cluster made of a metal or a semiconductor, and a raw material particle of a semiconductor or insulator in an atomic or molecular state of a substance having a band gap larger than that of the cluster obtained in the first step. A method for producing a microstructured material having a second step, wherein both steps are performed simultaneously or alternately and the clusters are embedded in the substance. 2. The method for producing a microstructure according to claim 1, wherein laser ablation is used in the first step, and photochemical vapor deposition is used in the second step. 3. The method for producing a fine structure according to claim 1, wherein ultraviolet laser light is used in both the first and second steps. 4. A solid target as a cluster raw material, a means for irradiating the solid target with laser light, a means for introducing a gas to be photodecomposed, and a light for decomposing the gas are provided in a container capable of being evacuated. An apparatus for producing a microstructured material, comprising: a means for introducing the material; and a substrate holder arranged at a position where both the clusters generated from the target and the substances generated by photolysis are deposited on the substrate. 5. A step of generating clusters by laser ablation using pulsed laser light, and chopping the clusters generated in the first step in synchronism with the pulse of the laser light to obtain a grain size of the generated clusters. And a method of manufacturing a microstructured material. 6. A solid target serving as a cluster raw material, means for irradiating the solid target with pulsed laser light, and means for chopping the clusters generated in synchronization with the pulse of the laser light in a container capable of being evacuated. An apparatus for manufacturing a microstructured material having: 7. The apparatus for producing a microstructured material according to claim 6, wherein the means for chopping is a mechanical chopper. 8. The fine means according to claim 6, wherein the chopping means is means for ionizing the generated clusters and means for mass-separating the ionized clusters by applying an electric field or magnetic field pulse synchronized with the laser pulse to the ionized clusters. Manufacturing equipment for structural materials. 9. A solid target serving as a cluster raw material, means for irradiating the solid target with pulsed laser light, and a substrate on which clusters are deposited are rotated or synchronized with a pulse of the laser light in a container capable of being evacuated. An apparatus for producing a microstructured material, comprising a means for reciprocating motion. 10. A step of forming clusters, a step of modifying the surface of the generated clusters with a material having a larger band gap, or coating with a material having a larger band gap, the generated clusters, or A method for producing a microstructured material, comprising a step of mass-separating the cluster after the modification or coating. 11. Means for producing clusters, means for modifying the surface of the produced clusters with a substance having a larger band gap or coating with a substance having a larger band gap, the produced clusters, or An apparatus for producing a microstructured material, comprising means for mass-separating the clusters after the modification / coating treatment. 12. A step of irradiating a focused laser beam on a gas molecule to generate high-concentration cluster raw material active particles at the focused point, and irradiating the laser beam directly away from the focused point. And a step of depositing clusters on a substrate arranged at a position. 13. A flat electrode, in which a plurality of needles having the same shape and size are arranged in parallel, is arranged close to and in parallel with the surface of the substrate, and an electric field is applied between each tip of the needle and the surface of the substrate. The first step, the second step of depositing the first substance on the substrate surface after the first step, the third step of removing the first substance, and the third step after the third step. The second material having a larger bandgap than the first material on the surface of the substrate.
And a fourth step of depositing the substance of 1. 14. A substrate holder, a planar electrode in which a plurality of needles having the same shape and size are arranged in parallel, and a surface of the substrate placed on the substrate holder are brought close to the planar electrode in a container that can be evacuated. Means for arranging in parallel, at least one means for depositing a plurality of substances on the surface of the substrate,
An apparatus for producing a microstructured material, comprising: a means for removing at least one of the substances. 15. A substrate holder is provided in all of a plurality of containers that can be evacuated, and a planar electrode in which a plurality of needles having the same shape and size are arranged in parallel in any of the plurality of containers, and the substrate holder. Means for arranging the planar electrodes close to and parallel to the surface of the substrate installed on the substrate, at least one means for depositing a plurality of substances on the surface of the substrate, a means for removing at least one of the substances, and the plurality of containers. An apparatus for producing a microstructured material, comprising: a joining unit that joins the substrates, and a unit that conveys the substrate between the containers. 16. A method for producing a microstructured material, wherein one-dimensional polymer raw material molecules or clusters whose surface is coated with a different substance are supplied onto the surface of the substrate while applying an electric field in one direction parallel to the surface of the substrate. . 17. When supplying a one-dimensional polymer raw material molecule or cluster, a first energy having an energy to cut a bond of the raw material molecule on the side forming the one-dimensional polymer main chain or a bond between the cluster and the coating different substance. 17. The method for producing a microstructured material according to claim 16, wherein the substrate surface is irradiated with a group of photons according to claim 16. 18. When supplying a one-dimensional polymer raw material molecule or cluster, a second energy having a larger energy than the band gap of the one-dimensional polymer or cluster deposited on the surface of the substrate or the thin linear cluster to which the one-dimensional polymer is bound.
The photon group of the above is irradiated onto the surface of the substrate.
A method for producing the described microstructured material. 19. The method according to claim 16, wherein the first and second photon groups are the same and are irradiated onto the surface of the substrate.
5. The method for producing a microstructured material according to any one of 1. 20. One-dimensional electrical conduction containing a raw material particle substance such as atoms, molecules or clusters supplied from the gas phase in its composition by applying an electric field in the longitudinal direction of the terrace provided on the surface of the substrate, that is, in the direction in which the steps run. A method for producing a microstructured material, wherein a body is grown along the running direction of the step. 21. The method for producing a microstructured material according to claim 20, wherein the surface of the substrate is irradiated with a group of photons having energy that contributes to the binding and growth of the raw material particles on the surface of the substrate. 22. The method for producing a microstructured material according to claim 20, wherein a terrace and steps are provided by slightly inclining the surface of the substrate from a stable crystal plane. 23. The method for producing a fine structure material according to claim 20, wherein the main component of the raw material particle substance is silicon. 24. Light emission comprising a substrate whose surface is slightly tilted from a stable crystal plane and terraces and steps are present at a high density, and a one-dimensional electric conductor which contains silicon atoms in its composition and extends along the steps. element. 25. A microstructured material obtained by embedding a cluster, a fine linear cluster, a one-dimensional electric conductor or a one-dimensional polymer in a material having a larger band gap, or a porous material originating from an indirect transition type semiconductor material. And a cold cathode that excites the light source.