Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
  • C23C14/0036—Reactive sputtering
  • C23C14/0089—Reactive sputtering in metallic mode
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
  • C23C14/0036—Reactive sputtering
  • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Definitions

• the invention relates to a coating system with a recipient having a suction and a gas supply, in which a nebulizer cathode and a substrate holder are accommodated and in which the recipient is divided into a cathode space and a substrate space by a screen arranged between the atomizer cathode and the substrate holder is.
• a coating system of the above type is the subject of EP 0 795 623.
• argon and oxygen process gas flows near the substrate into the substrate space and is removed above the screen via a suction device on the cathode space.
• a measuring device designed as a lambda probe in the cathode compartment serves to monitor the oxygen content in the cathode compartment and to control the performance of the atomizing cathode based on the oxygen content.
• the joint supply of the reactive gas and the process gas and the removal of the gas via a suction at the cathode compartment cannot prevent the target of the atomizing cathode from being exposed to a considerable oxygen concentration.
• the diaphragm according to EP 0 795 623 has the sense of preventing the layer quality from being reduced by oblique coating.
• the invention is based on the problem of designing a coating installation of the type mentioned at the outset in such a way that a sufficiently high concentration of reactive gas is possible in order to enable the layer which forms to react completely, without at the same time undesirably causing the target surface to react with the reactive gas reacts and this leads to a reduction in the performance of the coating system.
• both the cathode space and the substrate space have direct suction and each have their own gas supply and that the gas supply to the cathode space is connected to a process gas source and the gas supply to the substrate space is connected to a reactive gas source.
• This design of the coating system results in largely independent gas flows in the cathode space and the substrate space.
• the reactive gas is shielded from the sputtering process by the diaphragm.
• the reactive gas usually oxygen - reach the cathode compartment, so that there is no reaction of the target surface and thus a reduction in the coating performance of the coating system.
• the flow of the particles forming the layer and originating from the target surface reaches the substrate through the opening of the diaphragm.
• the opening in the aperture can be large, so that the particles originating from the target surface are little obstructed on the way to the substrate without, conversely, an undesirable amount of oxygen reaching the sputtering cathode and becoming one there Oxidation is coming. It was found that the dimming effect of the aperture for the sputtered particles can be overcompensated by the possible rate increase at the target due to the lower reactive gas content there. Particularly significant increases in the specific coating performance were obtained with the coating system according to the invention in the production of transparent SnO and ZnO layers with reactively operated DC atomizing cathodes.
• the gas flows are separated particularly well if the cathode compartment and the substrate compartment are each connected to their own vacuum pumping station.
• the anode is arranged in the substrate space covered by the screen between the screen and the substrate holder.
• Such an anode has the effect that the plasma flow extends through the aperture opening over the coating location of the substrate in the direction of the slot lock. This can also improve the layer properties. In particular, a high layer density can be achieved with such an anode arrangement. Since the anode is covered by the screen, there is no significant coating of the anode.
• the anode can be designed in the usual way. It is particularly advantageous if the anode is heated pipes is formed. Since SnO and ZnO have a relatively high conductivity, the coating of the anode which inevitably takes place during the coating process of the substrate and the resulting loss of activity in such coating materials is irrelevant. However, provision can also be made for the anode, surrounded by a weak magnetic field, to be set in pulses to a negative potential in order to keep it conductive and clean.
• the anode also forms the screen.
• the cathode is a double magnetron cathode.
• the cathode is a rotary cathode.
• a measuring device for reactive gas is arranged in the cathode compartment and the coating system has a power control of the atomizing cathode depending on the concentration of the reactive gas in the cathode compartment.
• the ratio of the aperture opening length of the aperture measured in the transport direction of the substrate to the width of the atomizing cathode measured in the transport direction of the substrate is less than 0.75, preferably 0.5 to 0.3.
• the drawing shows in section a coating system according to the invention.
• This has a recipient 1, which is subdivided into a cathode space 3 and a substrate space 4 by an aperture 2.
• an atomizer cathode 5 which is electrically insulated from the recipient 1 and which in this exemplary embodiment is designed as a magnetron cathode and has a target 6 on the side of the screen 2.
• An anode 7 is arranged in the substrate space 4 below the aperture 2 and covered by it.
• a gas supply 8 which is connected to a process gas source 9.
• a suction 10 with a vacuum pumping station 11 is arranged on the opposite side of the cathode chamber 3.
• the substrate space 4 there is a substrate holder 12 with a substrate 13 to be coated.
• the ratio of the aperture opening length of the aperture 2 measured in the transport direction of the substrate 13 to the width of the atomizing cathode 5 measured in the transport direction of the substrate 13 is less than 0.75, preferably 0.5 up to 0.3.
• the substrate space 4 has a gas supply 14 on the same side as the cathode space 3, which has a connection to a reactive gas source 15.
• a suction 16 with a vacuum pumping station 17 is provided opposite the gas supply 14.
• a measuring device designed as a lambda probe is arranged in the cathode chamber 3.
• device 18 arranged with a probe heater 20, which has a connection to a power control 19 of the atomizing cathode 5.

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• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Physical Vapour Deposition (AREA)
• Electrodes For Compound Or Non-Metal Manufacture (AREA)
• Fuel Cell (AREA)

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Applications Claiming Priority (2)

Publications (2)

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Citations (6)

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• 2002
  • 2002-04-15 DE DE2002116671 patent/DE10216671A1/de not_active Withdrawn
• 2003
  • 2003-04-11 CN CN 03813834 patent/CN1662672A/zh active Pending
  • 2003-04-11 EP EP03746233A patent/EP1495152A2/de not_active Withdrawn
  • 2003-04-11 WO PCT/DE2003/001216 patent/WO2003087426A2/de not_active Application Discontinuation
  • 2003-04-11 AU AU2003232604A patent/AU2003232604A1/en not_active Abandoned
  • 2003-04-11 JP JP2003584359A patent/JP2005522584A/ja not_active Withdrawn

Patent Citations (6)

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