WO2003058671A2 - Poste de destination cible pour l'implantation ionique combinatoire et procede d'implantation ionique - Google Patents

Poste de destination cible pour l'implantation ionique combinatoire et procede d'implantation ionique Download PDF

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Publication number
WO2003058671A2
WO2003058671A2 PCT/EP2003/000293 EP0300293W WO03058671A2 WO 2003058671 A2 WO2003058671 A2 WO 2003058671A2 EP 0300293 W EP0300293 W EP 0300293W WO 03058671 A2 WO03058671 A2 WO 03058671A2
Authority
WO
WIPO (PCT)
Prior art keywords
sample
shutter
shutters
ion beam
defining
Prior art date
Application number
PCT/EP2003/000293
Other languages
English (en)
Other versions
WO2003058671A3 (fr
Inventor
Bernd Stritzker
Helmut Karl
Ingo Grosshans
Axel Wenzel
Original Assignee
Universität Augsburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universität Augsburg filed Critical Universität Augsburg
Publication of WO2003058671A2 publication Critical patent/WO2003058671A2/fr
Publication of WO2003058671A3 publication Critical patent/WO2003058671A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms

Abstract

La présente invention porte sur un dispositif (poste de destination cible) et sur un procédé d'implantation ionique combinatoire dans un échantillon. Le dispositif de cette invention comprend normalement une section de définition permettant de délimiter dans l'espace la dimension et la forme du faisceau ionique, une chambre d'échantillon dans laquelle l'échantillon à soumettre au rayonnement est placé, ainsi qu'un ensemble obturateur venant entre la section de la définition et la chambre d'échantillon. Cet ensemble comprend en règle générale deux systèmes obturateurs qui se commandent individuellement, chacun présentant un obturateur mobile que l'on peut placer à l'intérieur et à l'extérieur du faisceau ionique au cours d'étapes prédéterminées et/ou d'intervalles prédéterminés. L'obturateur à proprement parlé est de préférence un obturateur de type guillotine, les bords des deux obturateurs sont disposés de préférence perpendiculaires l'un par rapport à l'autre. Selon une variante, un obturateur ou les deux peut(vent) adopter la forme d'obturateurs à entaille, on peut même utiliser plus de deux systèmes obturateurs de manière à définir plus librement la dimension et la forme du faisceau ionique. L'avantage particulier de ce dispositif et de ce procédé vient du fait que l'on peut soumettre une pluralité de zones à un rayonnement sur un échantillon dans des circonstances identiques de processus de manière à économiser sensiblement du temps pendant la fabrication et la mise au point de matériaux, plus particulièrement de semi-conducteurs.
PCT/EP2003/000293 2002-01-14 2003-01-14 Poste de destination cible pour l'implantation ionique combinatoire et procede d'implantation ionique WO2003058671A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34729402P 2002-01-14 2002-01-14
US60/347,294 2002-01-14

Publications (2)

Publication Number Publication Date
WO2003058671A2 true WO2003058671A2 (fr) 2003-07-17
WO2003058671A3 WO2003058671A3 (fr) 2004-01-22

Family

ID=23363127

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/000293 WO2003058671A2 (fr) 2002-01-14 2003-01-14 Poste de destination cible pour l'implantation ionique combinatoire et procede d'implantation ionique

Country Status (1)

Country Link
WO (1) WO2003058671A2 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7309658B2 (en) 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
US7390739B2 (en) 2005-05-18 2008-06-24 Lazovsky David E Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
US7544574B2 (en) 2005-10-11 2009-06-09 Intermolecular, Inc. Methods for discretized processing of regions of a substrate
US7749881B2 (en) 2005-05-18 2010-07-06 Intermolecular, Inc. Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
US7867904B2 (en) 2006-07-19 2011-01-11 Intermolecular, Inc. Method and system for isolated and discretized process sequence integration
US7879710B2 (en) 2005-05-18 2011-02-01 Intermolecular, Inc. Substrate processing including a masking layer
US7955436B2 (en) 2006-02-24 2011-06-07 Intermolecular, Inc. Systems and methods for sealing in site-isolated reactors
US8011317B2 (en) 2006-12-29 2011-09-06 Intermolecular, Inc. Advanced mixing system for integrated tool having site-isolated reactors
US8084400B2 (en) 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
WO2014062515A1 (fr) * 2012-10-15 2014-04-24 Varian Semiconductor Equipment Associates, Inc. Source d'ions comportant un ensemble obturateur
US8772772B2 (en) 2006-05-18 2014-07-08 Intermolecular, Inc. System and method for increasing productivity of combinatorial screening
US8882914B2 (en) 2004-09-17 2014-11-11 Intermolecular, Inc. Processing substrates using site-isolated processing
WO2018067500A1 (fr) * 2016-10-05 2018-04-12 Magic Leap, Inc. Fabrication de réseaux de diffraction non uniformes
CN111599504A (zh) * 2020-05-29 2020-08-28 中国科学院近代物理研究所 一种重离子辐照系统及辐照方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4108404A1 (de) * 1990-04-09 1991-10-10 Jenoptik Jena Gmbh Verfahren zur steuerung der ionenstrahlbearbeitung von festkoerperoberflaechen
US5065034A (en) * 1989-05-10 1991-11-12 Hitachi, Ltd. Charged particle beam apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3965605B2 (ja) * 1996-03-14 2007-08-29 富士通株式会社 イオン注入装置及びイオン注入方法
JPH09283069A (ja) * 1996-04-12 1997-10-31 Toshiba Corp イオン注入装置
JPH10289679A (ja) * 1997-04-15 1998-10-27 Nissin High Voltage Co Ltd イオンビーム用可変コリメータ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065034A (en) * 1989-05-10 1991-11-12 Hitachi, Ltd. Charged particle beam apparatus
DE4108404A1 (de) * 1990-04-09 1991-10-10 Jenoptik Jena Gmbh Verfahren zur steuerung der ionenstrahlbearbeitung von festkoerperoberflaechen

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 01, 30 January 1998 (1998-01-30) & JP 09 245722 A (FUJITSU LTD), 19 September 1997 (1997-09-19) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 02, 30 January 1998 (1998-01-30) & JP 09 283069 A (TOSHIBA CORP), 31 October 1997 (1997-10-31) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01, 29 January 1999 (1999-01-29) & JP 10 289679 A (NISSIN HIGH VOLTAGE CO LTD), 27 October 1998 (1998-10-27) *

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8882914B2 (en) 2004-09-17 2014-11-11 Intermolecular, Inc. Processing substrates using site-isolated processing
US7309658B2 (en) 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
US8030772B2 (en) 2005-05-18 2011-10-04 Intermolecular, Inc. Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
US7390739B2 (en) 2005-05-18 2008-06-24 Lazovsky David E Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
US7749881B2 (en) 2005-05-18 2010-07-06 Intermolecular, Inc. Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
US7879710B2 (en) 2005-05-18 2011-02-01 Intermolecular, Inc. Substrate processing including a masking layer
US8084400B2 (en) 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
US7544574B2 (en) 2005-10-11 2009-06-09 Intermolecular, Inc. Methods for discretized processing of regions of a substrate
US7902063B2 (en) 2005-10-11 2011-03-08 Intermolecular, Inc. Methods for discretized formation of masking and capping layers on a substrate
US7955436B2 (en) 2006-02-24 2011-06-07 Intermolecular, Inc. Systems and methods for sealing in site-isolated reactors
US8772772B2 (en) 2006-05-18 2014-07-08 Intermolecular, Inc. System and method for increasing productivity of combinatorial screening
US8815013B2 (en) 2006-07-19 2014-08-26 Intermolecular, Inc. Method and system for isolated and discretized process sequence integration
US7867904B2 (en) 2006-07-19 2011-01-11 Intermolecular, Inc. Method and system for isolated and discretized process sequence integration
US8011317B2 (en) 2006-12-29 2011-09-06 Intermolecular, Inc. Advanced mixing system for integrated tool having site-isolated reactors
WO2014062515A1 (fr) * 2012-10-15 2014-04-24 Varian Semiconductor Equipment Associates, Inc. Source d'ions comportant un ensemble obturateur
WO2018067500A1 (fr) * 2016-10-05 2018-04-12 Magic Leap, Inc. Fabrication de réseaux de diffraction non uniformes
CN110036317A (zh) * 2016-10-05 2019-07-19 奇跃公司 制作非均匀衍射光栅
US10436958B2 (en) 2016-10-05 2019-10-08 Magic Leap, Inc. Fabricating non-uniform diffraction gratings
JP2019531508A (ja) * 2016-10-05 2019-10-31 マジック リープ， インコーポレイテッドＭａｇｉｃ Ｌｅａｐ，Ｉｎｃ． 不均一回折格子の加工
US11609365B2 (en) 2016-10-05 2023-03-21 Magic Leap, Inc. Fabricating non-uniform diffraction gratings
CN111599504A (zh) * 2020-05-29 2020-08-28 中国科学院近代物理研究所 一种重离子辐照系统及辐照方法
CN111599504B (zh) * 2020-05-29 2022-05-17 中国科学院近代物理研究所 一种重离子辐照系统及辐照方法

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Publication number Publication date
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