WO2003054930A3 - Dispositif de gravure, de rincage et de sechage de substrats en atmosphere ultra-propre - Google Patents

Dispositif de gravure, de rincage et de sechage de substrats en atmosphere ultra-propre Download PDF

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Publication number
WO2003054930A3
WO2003054930A3 PCT/FR2002/004245 FR0204245W WO03054930A3 WO 2003054930 A3 WO2003054930 A3 WO 2003054930A3 FR 0204245 W FR0204245 W FR 0204245W WO 03054930 A3 WO03054930 A3 WO 03054930A3
Authority
WO
WIPO (PCT)
Prior art keywords
rinsing
etching
liquid
ultra
drying
Prior art date
Application number
PCT/FR2002/004245
Other languages
English (en)
Other versions
WO2003054930A2 (fr
Inventor
Olivier Raccurt
Original Assignee
Vaco Microtechnologies
Olivier Raccurt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vaco Microtechnologies, Olivier Raccurt filed Critical Vaco Microtechnologies
Priority to EP02801111A priority Critical patent/EP1456869A2/fr
Priority to US10/498,250 priority patent/US20050016680A1/en
Priority to AU2002364824A priority patent/AU2002364824A1/en
Priority to JP2003555559A priority patent/JP2005513798A/ja
Publication of WO2003054930A2 publication Critical patent/WO2003054930A2/fr
Publication of WO2003054930A3 publication Critical patent/WO2003054930A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)

Abstract

Un dispositif de gravure, de rinçage et de séchage pour substrats (7), comprend un bac (5) ayant un fond diffuseur (9) et une goulotte de débordement (2). Des buses de projection (10, 11) sont agencées dans le fond diffuseur (9), de manière à injecter, dans le bac, un liquide de gravure LG et un liquide de rinçage LR. Le bac (5) est équipé à la partie supérieure d'au moins une rampe (1) d'injection d'un liquide de séchage LS pour former une couche superficielle d'épaisseur homogène au-dessus de l'eau constituant le liquide de rinçage LR. Le liquide de séchage ILS est non miscible dans l'eau et présente une tension de surface et une densité plus faibles que celles de l'eau.
PCT/FR2002/004245 2001-12-18 2002-12-10 Dispositif de gravure, de rincage et de sechage de substrats en atmosphere ultra-propre WO2003054930A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP02801111A EP1456869A2 (fr) 2001-12-18 2002-12-10 Dispositif de gravure, de rincage et de sechage de substrats en atmosphere ultra-propre
US10/498,250 US20050016680A1 (en) 2001-12-18 2002-12-10 Device for etching rinsing and drying substrates in an ultra-clean atmosphere
AU2002364824A AU2002364824A1 (en) 2001-12-18 2002-12-10 Device for etching, rinsing and drying substrates in ultra-clean atmosphere
JP2003555559A JP2005513798A (ja) 2001-12-18 2002-12-10 超清浄雰囲気中で基板をエッチング、リンスおよび乾燥する装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR01/16415 2001-12-18
FR0116415A FR2833753B1 (fr) 2001-12-18 2001-12-18 Dispositif de gravure, de rincage, et de sechage de substrats en atmosphere ultra-propre

Publications (2)

Publication Number Publication Date
WO2003054930A2 WO2003054930A2 (fr) 2003-07-03
WO2003054930A3 true WO2003054930A3 (fr) 2004-01-22

Family

ID=8870660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2002/004245 WO2003054930A2 (fr) 2001-12-18 2002-12-10 Dispositif de gravure, de rincage et de sechage de substrats en atmosphere ultra-propre

Country Status (7)

Country Link
US (1) US20050016680A1 (fr)
EP (1) EP1456869A2 (fr)
JP (1) JP2005513798A (fr)
AU (1) AU2002364824A1 (fr)
FR (1) FR2833753B1 (fr)
TW (1) TW200303578A (fr)
WO (1) WO2003054930A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050061775A1 (en) * 2003-09-19 2005-03-24 Kuo-Tang Hsu Novel design to eliminate wafer sticking
FR2877766A1 (fr) * 2004-11-09 2006-05-12 Vaco Microtechnologies Sa Procede de gravure, de rincage et de sechage de substrats limitant les phenomenes de collage
JP2009141022A (ja) * 2007-12-04 2009-06-25 Tokyo Electron Ltd 基板処理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0331226A (ja) * 1989-06-28 1991-02-12 Central Glass Co Ltd 共沸様混合溶剤組成物
US5896875A (en) * 1995-09-01 1999-04-27 Matsushita Electronics Corporation Equipment for cleaning, etching and drying semiconductor wafer and its using method
US6152153A (en) * 1997-12-08 2000-11-28 Kabushiki Kaisha Toshiba Substrate cleaning/drying equipment and substrate cleaning/drying method
FR2797405A1 (fr) * 1999-08-12 2001-02-16 Coillard Sa Ets Bac de rincage a liquide ultra propre
WO2001024950A1 (fr) * 1999-10-06 2001-04-12 Speedfam-Ipec Corporation Procede et appareil de nettoyage de tranches a semi-conducteurs
EP1158257A1 (fr) * 1999-01-18 2001-11-28 Toho Kasei Ltd. Technique de s chage de substrat et dispositif correspondant

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514355B1 (en) * 1999-02-08 2003-02-04 International Business Machines Corporation Method and apparatus for recovery of semiconductor wafers from a chemical tank
US6399517B2 (en) * 1999-03-30 2002-06-04 Tokyo Electron Limited Etching method and etching apparatus
KR100595302B1 (ko) * 2000-12-30 2006-07-03 엘지.필립스 엘시디 주식회사 액정표시소자 제조를 위한 유리기판 식각장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0331226A (ja) * 1989-06-28 1991-02-12 Central Glass Co Ltd 共沸様混合溶剤組成物
US5896875A (en) * 1995-09-01 1999-04-27 Matsushita Electronics Corporation Equipment for cleaning, etching and drying semiconductor wafer and its using method
US6152153A (en) * 1997-12-08 2000-11-28 Kabushiki Kaisha Toshiba Substrate cleaning/drying equipment and substrate cleaning/drying method
EP1158257A1 (fr) * 1999-01-18 2001-11-28 Toho Kasei Ltd. Technique de s chage de substrat et dispositif correspondant
FR2797405A1 (fr) * 1999-08-12 2001-02-16 Coillard Sa Ets Bac de rincage a liquide ultra propre
WO2001024950A1 (fr) * 1999-10-06 2001-04-12 Speedfam-Ipec Corporation Procede et appareil de nettoyage de tranches a semi-conducteurs

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 015, no. 154 (C - 0825) 18 April 1991 (1991-04-18) *

Also Published As

Publication number Publication date
WO2003054930A2 (fr) 2003-07-03
TW200303578A (en) 2003-09-01
AU2002364824A1 (en) 2003-07-09
FR2833753B1 (fr) 2004-02-20
JP2005513798A (ja) 2005-05-12
FR2833753A1 (fr) 2003-06-20
US20050016680A1 (en) 2005-01-27
EP1456869A2 (fr) 2004-09-15

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