WO2003054590A1 - Materiau en cristal de fluorure pour un dispositif optique utilise pour un materiel photolithographique et son procede de fabrication - Google Patents
Materiau en cristal de fluorure pour un dispositif optique utilise pour un materiel photolithographique et son procede de fabrication Download PDFInfo
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- WO2003054590A1 WO2003054590A1 PCT/JP2002/012928 JP0212928W WO03054590A1 WO 2003054590 A1 WO2003054590 A1 WO 2003054590A1 JP 0212928 W JP0212928 W JP 0212928W WO 03054590 A1 WO03054590 A1 WO 03054590A1
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- fluoride crystal
- crystal material
- lens
- birefringence
- holder
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
- G02B5/3091—Birefringent or phase retarding elements for use in the UV
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
Definitions
- the present invention relates to a fluoride crystal material for an optical element used in an optical lithography apparatus and a method for producing the same.
- the present invention relates to a fluoride crystal material for an optical element used in an optical lithography apparatus, an optical element, and a method for producing the same, and more particularly to a wavelength of 200 nm or less, for example, a wavelength of 193 3171 or 15
- the present invention relates to a fluoride crystal material for an optical element used in an optical lithography apparatus using light of 7 nm as a light source and a method for producing the same, and an optical element using the fluoride crystal material, an optical apparatus, and an optical lithography apparatus.
- an optical lithography method is generally used.
- the exposure wavelength gradually becomes shorter, followed by a projection exposure apparatus (stepper or scanner) using KrF excimer laser (wavelength: 248 nm) as a light source, followed by an ArF excimer laser ( Projection exposure equipment with a wavelength of 193 nm) is also available.
- KrF excimer laser wavelength: 248 nm
- ArF excimer laser Projection exposure equipment with a wavelength of 193 nm
- High imaging performance resolution, depth of focus
- the resolution and depth of focus are determined by the wavelength ⁇ of the light used for exposure and the numerical aperture of the lens ⁇ ⁇ .
- the focal depth two k 2 - represented by ⁇ / (1- (1- ⁇ ⁇ 2)).
- k and k 2 are proportional constants.
- the exposure wavelength is the same, the angle of the diffracted light increases as the pattern becomes finer, so that the diffracted light cannot be captured unless the NA of the lens is large. Also, the shorter the exposure wavelength, the smaller the angle of the diffracted light in the same pattern, so the NA of the lens can be small. From the above formula, to improve the resolution, it is necessary to increase the NA of the lens (increase the lens diameter) or shorten the exposure wavelength. From the above formula, it can be seen that it is more advantageous to increase the resolution while keeping the depth of focus deeper than to increase the NA.
- the exposure light wavelength lambda, K r F excimer short ⁇ consists wavelength 2 4 8 nm single laser light to A r F wavelength 1 9 3 nm excimer laser light, more F 2 laser It is expected that the wavelength of light will be shortened to 157 nm.
- the numerical aperture NA of the lens already exceeds 0.6 for the projection lens of the projection exposure apparatus that uses KrF excimer laser light as the light source, and the NA of the ArF excimer laser exceeds It has become. In the projection lens of the F 2 laser as the light source, but 0.7 is also expected to become higher.
- the raw material can be used as it is as a powder, but in this case, a semi-molten product or a crushed product thereof is generally used because the volume decreases sharply when the powder is melted. Also, it is possible to reuse the crystal-grown block as a raw material of the calcium fluoride single crystal.
- a method for producing calcium fluoride by the Bridgman method will be described. First, a crucible filled with a raw material of calcium fluoride is placed in the growing device, and the inside of the growing device is discharged. Air to be kept in a vacuum atmosphere of 1 0- 3 1 0- 4 P a .
- the temperature in the growing apparatus is raised to a temperature equal to or higher than the melting point of calcium fluoride to melt the raw materials in the rutupo.
- constant power output control or high-precision PID control is performed to minimize temporal fluctuations in the temperature inside the growing device.
- the crucible is pulled down at a speed of about 0.15 mm / hour in the growth apparatus, so that the crystal is gradually crystallized from the lower part of the crucible.
- the crystal growth is completed, and simple slow cooling is performed avoiding rapid cooling so that the grown crystal (ingot) does not crack.
- the temperature inside the growing device has dropped to about room temperature, open the device to the atmosphere and remove the ingot.
- a calcium fluoride single crystal used for a projection lens or the like of a projection exposure apparatus high uniformity is required, so that the ingot is subjected to simple annealing (heat treatment) as it is. Then, after being cut into an appropriate size as a lens material, annealing is further performed. After the completion of annealing, various characteristics for quality assurance are measured and selected. Lens materials that have passed quality assurance are subjected to spherical or aspherical polishing on the surface shape required for optical lenses, and then coated. The finished optical lenses are held one by one at the periphery by a metal or resin holding tool, and a plurality of lenses are adjusted and assembled in a container called a lens barrel to complete the projection lens.
- fluoride crystals belonging to the equiaxed crystal system have a birefringence inherent to the crystal.
- fluorinated lithium crystals in the crystal plane orientation where the maximum intrinsic birefringence appears, 3.4 nm / cm for light with a wavelength of 193 nm and 1 1 for light with a wavelength of 157 nm It is known that birefringence of 2 nm / cm is present (H. Burnett et al Phys. Rev. B64, 241102 (2001)).
- the intrinsic birefringence depends on the traveling direction of light passing through the crystal and the polarization direction of the light. That is, depending on the direction of the transmitted light, there is a polarization direction (fast axis) where the refractive index is minimum and a polarization direction (slow axis) where the refractive index is maximum.
- the advancing axis and the lagging axis are orthogonal.
- the light When light is applied to the processed projection lens, the light passes through the optical axis (center axis of the lens) at the center of the lens, but enters the optical axis at a finite incident angle to the optical axis at the other parts. And is affected by birefringence. For example, there is almost no intrinsic birefringence for light that is perpendicularly incident on the ⁇ 111 ⁇ or ⁇ 100 ⁇ plane of the fluoride crystal, but light deviated from the perpendicular direction, that is, There is an inherent birefringence for incident light that is angled with respect to the vertical axis of the ⁇ 1 1 1 ⁇ plane or ⁇ 100 ⁇ plane.
- the Strehl intensity is also called a point image intensity distribution, and is the ratio of the height of the highest point of the diffraction image of the lens having an aberration to the height of the peak of the aberration-free lens.
- the Strehl bow angle is 1.0 for an aberration-free lens, and becomes a positive value smaller than 1 as the aberration increases.
- the present inventor has disclosed, in Japanese Patent Application Laid-Open No. 11-240798, a method for producing a fluorite single crystal having sufficiently small birefringence, which is used in an optical system for photolithography. I have. In this method, a fluorite single crystal produced by the Bridgman method is annealed according to a specific temperature schedule. However, this document does not heat the crystal in such a way that a specific heat distribution occurs. Disclosure of the invention
- the present invention has been made to solve the above-mentioned problems of the prior art, and a first object of the present invention is to provide a fluoride crystal material with reduced birefringence inherent to a fluoride crystal and a method for producing the same. It is to be.
- the second object of the present invention is to use a short wavelength such as a vacuum ultraviolet region.
- An object of the present invention is to provide an optical element having good imaging characteristics for light in a region, an optical device using the same, and an optical lithography apparatus.
- a fluoride crystal material for an optical element used in an optical lithography apparatus, wherein a birefringence for a light source having a wavelength of about 157 nm is 2.
- a fluoride crystal material for an optical element used in an optical lithography apparatus there is provided a fluoride crystal material for an optical element used in an optical lithography apparatus.
- a fluoride crystal material characterized by having a maximum birefringence of 1.0 nm / cm or less for a light source having a wavelength of about 193 nm.
- the crystalline material has a very low birefringence ⁇ suppressed even for light with a short wavelength of about 157 nm or about 193 ⁇ m, so good imaging characteristics can be obtained even with a short wavelength light source. Can be maintained.
- the average value of the birefringence is 1.7 nm / cm or less for light having a wavelength of about 157 nm, and 0.8 nm for light having a wavelength of about 193001. / cm or less.
- the fast axis (and the slow axis) of the refractive index of the fluoride crystal cut out in a disc shape from the ingot of the fluoride crystal is determined by actual measurement or calculation, and based on the characteristics thereof. It is obtained by generating internal stress in the fluoride crystal material so as to reduce the birefringence inherent in the crystal.
- the fluoride crystal material for an optical element of the present invention is preferably a calcium fluoride crystal.
- the light incidence surface of the calcium fluoride crystal may be a ⁇ 111 ⁇ plane, a ⁇ 110 ⁇ plane or a ⁇ 100 ⁇ plane.
- internal stress is generated in the fluoride crystal material so as to reduce the amount of birefringence inherent to the fluoride crystal material.
- This internal stress is It can be generated by pressing the above-mentioned fluoride crystal material from the outside or by heat-treating the fluoride crystal material. Further, the internal stress may be generated by both heat treatment of the fluoride crystal material and external pressure treatment.
- an optical element formed of the fluoride crystal material of the present invention and an optical lithography apparatus including the optical element are ideal for short wavelength light source such as F 2 laser used for high resolution.
- an optical apparatus used in an optical lithography apparatus is ideal for short wavelength light source such as F 2 laser used for high resolution.
- the optical device of the present invention includes a pressing member that presses the lens to generate stress in the lens, birefringence of the lens is generated by generating stress inside the lens by pressing a specific direction of the lens. Can be reduced.
- the maximum value of the birefringence for light having a wavelength of about 157 nm is less than 2.0 nm / cm within the effective diameter (light transmission area) of the lens.
- the maximum value of the amount of birefringence for light having a wavelength of about 193 nm can be made to be 1.0 nm / cm or less within the effective diameter of the lens.
- the pressing member since the pressing member is provided on the holder, it is possible to maintain the state where the pressing force is applied to the lens as long as the lens is held by the holder.
- the pressing member includes a plurality of pressing portions (internal pressure generating members), and each pressing portion can press different positions on the lens outer periphery.
- each pressing part has a rotationally symmetric position on the outer periphery of the lens, for example, twice, three times. It is desirable that the lens is provided on the holder so as to press the lens at the four-fold symmetric position. More specifically, every 30 ° (supported at 12 points), every 60 ° (supported at 6 points), every 120 ° (supported at three points), every 120 ° with respect to the center axis of the lens, Alternatively, a pressing portion can be provided on the holder corresponding to the position of 180 ° (two-point support).
- the holder may be provided with a holding member for holding the lens separately from the pressing member, or the lens may be held by the pressing member.
- the holding member When the holding member is provided on the holder, the holding member may be configured to hold the outer peripheral portion of the lens.
- a fixing member for fixing the pressing portion on the holder in a state where each pressing portion presses the lens for example, a holding screw may be provided.
- the holder if the holder is designed according to the purpose for which the lens is installed, it can be installed as it is.
- the holder 1 may constitute a part of a lens barrel of a projection optical system used for optical lithography. This facilitates assembly of the projection optical system and adjustment of various characteristics of the lens.
- an optical lithography apparatus comprising: a step of growing a fluoride crystal; and a heat treatment step of raising the temperature of the grown fluoride crystal, holding the crystal for a certain time, and then lowering the temperature.
- a method for producing a fluoride crystal material for an optical element wherein the heat treatment step heats the fluoride crystal such that a non-uniform heat distribution is generated in the fluoride crystal.
- a manufacturing method is provided. In the method for producing a fluoride crystal material of the present invention, the fluoride crystal is heated so that a non-uniform heat distribution is generated in the fluoride crystal. Internal stress (thermal stress) that cancels the amount of refraction can be generated.
- the apparatus used for the heat treatment may use heat treatment furnace capable of providing a temperature distribution in the 3-fold symmetry and four-fold symmetry in the circumferential direction of the fluoride crystal material, heat treatment This can be achieved by arranging a heater at a desired symmetric position in the furnace or arranging a heat insulator, a reflector, a heat sink, etc. at a desired symmetric position.
- heat treatment furnace capable of providing a temperature distribution in the 3-fold symmetry and four-fold symmetry in the circumferential direction of the fluoride crystal material
- heat treatment This can be achieved by arranging a heater at a desired symmetric position in the furnace or arranging a heat insulator, a reflector, a heat sink, etc. at a desired symmetric position.
- a fluoride crystal material cut out in a disk shape such that the ⁇ 111 ⁇ plane is the upper and lower surfaces of the lens, 120 ° in the circumferential direction with respect to the vertical axis of the disk-shaped fluoride crystal material.
- each has its own birefringence peak. That is, the distribution of the birefringence amount has a distribution shape symmetrical three times in the circumferential direction with respect to the vertical axis of the disc-shaped fluoride crystal material. Birefringence hardly occurs when light is incident from the same direction as the vertical axis. However, when this fluoride crystal material is used as a lens, ⁇ 11 1 ⁇ Intrinsic birefringence occurs in directions other than the plane direction. Therefore, for a fluoride crystal material that is cut into a disk shape so that the ⁇ 111 ⁇ plane becomes the upper and lower surfaces, a temperature distribution that is three-fold symmetrical in the circumferential direction with respect to the central axis of the fluoride crystal material is obtained.
- an optical lithography apparatus comprising: a step of growing a fluoride crystal; and a heat treatment step of raising the temperature of the grown fluoride crystal, holding the crystal for a certain time, and then lowering the temperature.
- the method for producing a fluoride crystal material for an optical element comprising a step of partially pressing the fluoride crystal so that an internal stress is generated in the fluoride crystal subjected to the heat treatment step.
- a method for producing a fluoride crystal material is provided. As in the method according to the fifth aspect of the present invention, heat treatment is performed in a state where a pressing force is applied to the outer periphery of the fluoride crystal material, and the external stress is removed after the heat treatment, whereby the internal stress of the fluoride crystal material is reduced. May be generated.
- the pressing force applied to the outer periphery may be non-uniform in the circumferential direction with respect to the central axis of the fluoride crystal material, for example, a pressing force such as three-fold symmetry or four-fold symmetry in the circumferential direction with respect to the central axis.
- a fluoride crystal is held by applying a partial pressing force to the fluoride crystal using a holder provided with a pressing member, and the holder holding the fluoride crystal is subjected to a heat treatment step. it can.
- FIG. 1 shows an optical element holding the calcium fluoride crystal described in Example 1
- FIG. 1 (a) is a plan view
- FIG. 1 (b) is a broken line A 1— in FIG. 1 (a).
- FIG. 3 is a cross-sectional view in the A1 direction.
- FIG. 2 shows a method of holding the calcium fluoride crystal when measuring the birefringence of the calcium fluoride crystal described in Example 1
- FIG. 2 (a) is a plan view
- FIG. 2 (b) is a diagram
- FIG. 2 (a) is a cross-sectional view in the direction of dashed line A2-A2.
- FIG. 3 shows a method for measuring the birefringence of the calcium fluoride crystal described in Example 1 with respect to oblique incident light.
- FIG. 4 shows an optical element holding the calcium fluoride crystal described in Example 2
- FIG. 4 (a) is a plan view
- FIG. 4 (b) is a broken line A 3— in FIG. 4 (a).
- FIG. 3 is a cross-sectional view in the A3 direction.
- FIG. 5 shows a method of holding the calcium fluoride crystal when measuring the birefringence of the calcium fluoride crystal described in Example 2
- FIG. 5 (a) is a plan view
- FIG. 5 (b) is a diagram
- 5 (a) is a cross-sectional view in the direction of dashed line A4--A4.
- FIG. 6 shows an optical element holding the calcium fluoride crystal described in Example 3
- FIG. 6 (a) is a plan view
- FIG. 6 (b) is a broken line A 5— in FIG. 6 (a).
- FIG. 5 is a cross-sectional view in the A5 direction.
- FIG. 7 shows a method of holding the calcium fluoride crystal when measuring the birefringence of the calcium fluoride crystal described in Example 3,
- FIG. 7 (a) is a plan view
- FIG. 7 (b) is a diagram.
- FIG. 7 (a) is a cross-sectional view taken along a broken line A6-A6 in FIG.
- FIG. 8 is a cross-sectional view of the configuration of a heat treatment furnace when annealing a calcium fluoride crystal in which the upper and lower surfaces of the flat plate described in Example 4 are ⁇ 111 ⁇ planes.
- FIG. 9 shows a method of retaining calcium fluoride crystals during the heat treatment described in Example 5, FIG. 9 (a) is a plan view, and FIG. 9 (b) is a broken line A in FIG. 9 (a).
- FIG. 7 is a cross-sectional view in the 7_A7 direction.
- FIG. 10 is a conceptual diagram showing the entire structure of an optical lithography apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
- FIGS. 1A and 1B show an optical element (optical apparatus) used in lithography manufactured in Example 1.
- the optical element 110 manufactured in this example has a lens 111, a cylindrical holder 111, three holding members 111, and three The internal stress generating member (pressing member) is composed of 115.
- the lens 111 is a disc-shaped uneven lens made of calcium fluoride crystal, and the optical axis (center axis) 117 of the lens 111 is approximately the same as the [111] axis of the calcium fluoride crystal. I agree.
- “substantially coincide” means that the optical axis is ⁇ 3 with respect to the specified axis of the crystal. It indicates that they match within blueness.
- a convex portion 111a is formed in a circumferential direction on a side wall 111b of the outer periphery of the lens 111.
- the lens 111 is held in the holder 114 by a holding member 116 provided on the cylindrical holder 114.
- three holding members 116 are provided on the holder 114, and are provided at intervals of about 120 ° in the circumferential direction of the holder 114.
- the holding member 1 16b is an arm 1 16b extending from the inside of the inner peripheral wall of the holder 114 toward the center of the holder 1 and a holding portion provided at the tip thereof. (Recess) 1 16 a.
- the grip portion 116a has a structure for sandwiching the upper and lower surfaces of the convex portion 111a formed on the outer peripheral side wall of the lens 111a.
- the lens 1 1 1 is held coaxially with the center axis of the holder 1 1 4 by sandwiching the convex 1 1 1 a on the outer periphery of the lens 1 1 1 1 with the holding section 1 1 6 a of the holding member 1 1 6. ing.
- the holding member 116 and the internal stress generating member 115 are provided at positions that do not overlap with each other in the circumferential direction.
- the holder 111 is provided with three internal stress generating members (pressing portions) 115 for generating internal stress in the lens 111.
- This member 1 15 is divided into a rod 1 15 a movably inserted into a through hole 1 14 a penetrating the wall of the holder 1 14 and a lens-side end of the rod 1 15 a.
- the position of rod 1 1 5a with respect to holder 1 1 1 4 is fixed by screw 1 1 4c inserted into screw hole 1 1 4b formed in holder 1 1 4 pressing rod 1 1 5a.
- the internal stress-generating member 115 is 30 in the circumferential direction of the holder 114 from the [—110] axis 111 perpendicular to the lens center axis 117 ([111] axis).
- the internal stress generating member 1 15 is applied by applying a pressing force 113 toward the lens center axis 117 to the end of the load 1 115 a located outside the holder of the internal stress generating member 115.
- the elastic member 1 1 5c presses the outer peripheral wall 1 1 1 b of the lens 1 1 1 and the center axis of the lens 1 1 1 from the outside of the holder 1 1 4 in the radial direction.
- a pressing force 1 1 3 is applied toward 1 1 7.
- a calcium fluoride crystal used for the lens 111 was grown by a Bridgman method, and was manufactured by removing a thermal strain through a heat treatment step.
- a columnar calcium fluoride crystal having a diameter of 25 Omm was prepared.
- FIGS. 2 (a) and (b) show a state in which a calcium fluoride crystal material is mounted on a holder 124 for measuring birefringence.
- the holder 124 has the same structure as the holder 114 shown in FIG. 1 except that no holding member is provided. As shown in FIG. 2 (a), the calcium fluoride crystal material 121 is arranged coaxially with the center axis of the holder 124, and the [ ⁇ 110] axis 122 of the calcium fluoride crystal material 121 is arranged.
- the birefringence amount was reduced by externally applying a pressing force of about 50 N / cm 2 to the calcium fluoride crystal material 121.
- the amount of birefringence was measured by changing the pressing force in the same manner as described above, and it was found that the amount of birefringence was minimized when the pressing force was about 50 N / cm 2 .
- the intrinsic birefringence is the most efficient due to stress birefringence. ⁇ Canceled. Are offset, reducing the total birefringence of the material.
- the measurement light 13 emitted from the light source 13 4 holds the calcium fluoride crystal material 121 in the holder 124 with the internal stress generating member 125.
- the birefringence of the obliquely incident light was measured by detecting the transmitted light with the detector 1336 tilted with respect to 5.
- the inclination angles of the calcium fluoride crystal material 121 were set to 30 ° and 45 ° with respect to the incident direction of the measuring light 135. Note that the measurement was performed while moving the light irradiation position at an interval of 15 ° in a circumferential shape having a radius of 10 O mm in the in-plane region of the calcium fluoride crystal material 121. The measurement results are shown in Table 1B. Table 1 B
- the lens 111 was held coaxially with the central axis of the holder 114 by three holding members 111 provided on the holder 114.
- the pressing member 1 15 c of each internal stress generating member 1 15 provided on the holder 1 1 4 is pressed against the side wall 1 1 1 b formed on the outer periphery of the lens 1 1 1, Apply a pressing force 1 1 3 vertically to the center axis 1 1 7 of the lens 1 1 1 1
- a compressive stress was generated in the lens 1 1 1.
- Air pressure was used for the pressing force 1 13 and the pressure value was 50 ⁇ 5 N / cm 2 .
- the optical device for lithography 110 of Example 1 was produced.
- FIGS. 4A and 4B show the optical element for lithography manufactured in Example 2.
- the optical element 210 manufactured in this example includes a lens 21 K, a cylindrical holder 214, four holding members 216, and two internal stress generating members 215. It is composed of In this example, the central axis 217 of the lens 221 is set to the [110] axis of the calcium fluoride crystal. Further, as shown in FIG. 4A, four holding members 216 are provided at intervals of about 90 ° in the circumferential direction of the holder 214, and the internal stress generating member 215 is orthogonal to the center axis 217 of the lens.
- the configuration was the same as that of Example 1 except that the holder was provided at 0 ° and 180 ° in the circumferential direction of the holder 114 from the —110 ⁇ axis 212. However, as shown in FIG. 4A, the four holding members 216 and the two internal stress generating members 215 are provided at positions that do not overlap with each other.
- a method for manufacturing the optical element for lithography 210 manufactured in this example will be described. First, in the same manner as in Example 1, a calcium fluoride crystal used for the lens 211 is grown by the Bridgman method, and a heat treatment step is performed to remove thermal strain, thereby forming a columnar calcium fluoride crystal having a diameter of 250 mm. Produced.
- a disc-shaped material was cut out from the prepared calcium fluoride crystal ingot such that the [110] axis of the crystal substantially coincided with the central axis 217 of the lens 211, and the [110] axis was obtained.
- the [ ⁇ 110] axis direction orthogonal to the above was found by X-ray diffraction.
- the cut disk-shaped calcium fluoride crystal material is placed in a holder for birefringence measurement. Attached to. This is shown in Figure 5.
- the holder 224 has the same structure as the holder 224 shown in FIG. 4 except that the holding member 216 is not provided.
- the holder 2 2 4 When the calcium fluoride crystal material 2 2 1 is mounted on the holder 2 2 4 for measuring birefringence, the holder 2 2 4 is moved from the [-11 0] axis 2 2 2 of the calcium fluoride crystal material 2 2 1.
- Internal stress generating members 2 25 provided at 0 ° and 180 ° in the circumferential direction of the bearing apply a pressing force 2 23 of about 50 Ncm 2 from two directions toward the central axis 2 27 from two directions.
- the calcium fluoride crystal material 221 was held by the internal stress generating member 225 while being applied perpendicularly to the central axis 227.
- the measurement was carried out by moving the light irradiation position every 5 mm in the radial direction and every 30 ° in the circumferential direction in the in-plane region from the center of the calcium fluoride crystal material 222 to the outermost periphery.
- Table 2 shows the maximum and average measured values. For comparison, the birefringence when no pressing force is applied to the calcium fluoride crystal material 221 is also shown.
- the calcium fluoride crystal material 221 was once removed from the holder 224 and ground and polished so as to have a predetermined lens shape. .
- the side wall of the lens outer periphery is held by the holding member 2 14 with the lens 2 11 and pressed by the pressing member 2 15 c of the internal stress generating member 2 15 as shown in Fig. 4 (b).
- a convex portion 211a was formed.
- the processed lens was mounted on a holder 124 as shown in FIGS. 4 (a) and 4 (b).
- the lens 211 was held coaxially with the center axis of the holder -214 by the four holding members 216 provided on the holder 214.
- a pressing member 215 c of each internal stress generating member 215 provided on the holder 214 is pressed against a side wall portion 211 b of an outer periphery of the lens 211, and is pressed against a central axis 217 of the lens 211.
- a compressive stress was generated in the lens 211 by applying a pressing force 213 toward the center and perpendicular to the central axis 217. Air pressure was used for the pressing force 213, and the pressure value was 50 ⁇ 5 N / cm 2 .
- the lithographic optical element 210 of Example 2 was produced.
- FIG. 6 shows the optical element for lithography manufactured in Example 3.
- the optical element 310 manufactured in this example includes a lens 311, a cylindrical holder 314, four holding members 316, and four internal stress generating members 315.
- the central axis 317 of the lens 321 was the [100] axis of the calcium fluoride crystal.
- four holding members 316 are provided at intervals of about 90 ° in the circumferential direction of the holder 314, and the internal stress generating member 315 is connected to the center axis 317 of the lens. Cross the [001] 0 from the axis 312 in the circumferential direction of the holder 1314. , 90.
- the four holding members 316 and the four internal stress generating members 315 are provided at positions that do not overlap each other.
- a method of manufacturing the optical element 310 for lithography manufactured in this example will be described.
- a calcium fluoride crystal used for the lens 311 was grown by the Bridgman method, and a heat treatment step was performed to remove thermal strain to obtain a columnar calcium fluoride crystal having a diameter of 25 Omm.
- a heat treatment step was performed to remove thermal strain to obtain a columnar calcium fluoride crystal having a diameter of 25 Omm.
- the [100] axis of the crystal was obtained from the ingot of the calcium fluoride crystal.
- the disc-shaped material was cut out so as to substantially coincide with the central axis 3 17, and the [00 1] axis direction 3 12 orthogonal to the [100] axis was found by X-ray diffraction.
- the cut-out disk-shaped calcium fluoride crystal material was mounted on a holder for birefringence measurement. This is shown in FIG.
- the holder 324 has the same structure as the holder 314 shown in FIG. 6 except that the holding member 316 is not provided.
- the calcium fluoride crystal material 32 1 is mounted on the holder 324 for birefringence measurement, 0 ° in the circumferential direction of the holder 1 24 from the [00 1:] axis 322 of the calcium fluoride crystal material 32 1.
- Table 3 The results are shown in Table 3 below.
- the measurement was performed by moving the light irradiation position every 5 mm in the radial direction and every 30 ° in the circumferential direction in the in-plane region from the center of the calcium fluoride crystal material 321 to the outermost periphery.
- Table 3 shows the maximum and average measured values.
- the birefringence when no pressing force is applied to the calcium fluoride crystal material 321 is also shown.
- the crystal material 3221 was once removed from the holder 3224 and was ground and polished so as to have a predetermined lens shape. As shown in FIG. 6B, the side wall of the lens outer peripheral portion holds the lens 311 with the holding member 316 and the convex portion 3 so that the pressing member 315c can press the lens 311. Formed 1 1a.
- the processed lens was mounted on a holder 13 14 as shown in FIGS. 6 (a) and 6 (b). At that time, the lens 311 was held coaxially with the center axis of the holder 13 14 by four holding members 3 16 provided on the holder 13 14.
- each internal stress generating member 3 15 is pressed against the outer peripheral side wall 3 1 1 b of the lens 3 11, and is moved toward the central axis 3 17 of the lens 3 1 1.
- a compressive stress was generated in the lens 311 by applying a pressing force 313 vertically to the central axis 3117. Air pressure was used for the pressing force 3 13, and the pressure value was 50 ⁇ 5 N / cm 2 .
- the optical element for lithography 310 of Example 3 was produced.
- the birefringence of the lens 311 in the optical element 310 manufactured by the above manufacturing method was measured by the same method as the above-described birefringence measurement method. As a result, almost the same results as in Table 3 were obtained.
- the cut-out disk-shaped material of each calcium fluoride crystal was put into a heat treatment apparatus shown in FIG. 8 and heat-treated to generate internal stress in the calcium fluoride crystal.
- the center of the cylindrical heat treatment device 40 is The formed container 42 is arranged, and an airtight stainless steel container 43 is provided around the container 42. Outside the stainless steel container 43, an alumina heat insulating material 44 and a heater 45 are arranged, respectively.
- Alumina insulation material 44 is oriented in the circumferential direction 120 ° so that heat can be distributed three times circumferentially from the center of the container 42 (48) from the heat source 45. It is divided and installed for each.
- the heater 45 may be any heater as long as it can raise the temperature inside the heat treatment apparatus to 1200 ° C.
- a resistance heating element made of an alloy of nickel and chromium is used as a coil. It was used in a roll.
- a heat insulating material 46 and an outer frame 47 are provided outside the heater 45.
- the calcium fluoride crystal material 41 whose upper and lower surfaces were ⁇ 111 ⁇ planes was cut into the container 42 of the heat treatment apparatus 40. In the calcium fluoride crystal material 41 whose upper and lower surfaces are the ⁇ 111 ⁇ planes, there is a unique birefringence peak at every 120 ° around the center axis in the circumferential direction. I do.
- the calcium fluoride crystal material with the upper and lower surfaces of the disc material being ⁇ 100 ⁇ planes
- a temperature distribution that is four-fold symmetrical in the circumferential direction with respect to the central axis of the calcium fluoride crystal material is given.
- Alumina insulation was placed in the space (not shown).
- the fluoride fluoride crystal material having the ⁇ 111 ⁇ , ⁇ 110 ⁇ , and ⁇ 100 ⁇ planes on the upper and lower surfaces of the disc material is subjected to a heat treatment adapted to the respective birefringence distributions.
- the stainless steel container 43 was evacuated with an oil rotary pump together with an appropriate amount of ammonium hydrogen fluoride. After sealing the container 43, a heat treatment process of raising, holding, and lowering the temperature was performed. In this example, the following temperature control schedule was adopted for the heat treatment. First, the temperature is raised from 0 ° C to 150 ° C at a rate of 5 CTCZh, and is maintained at 150 ° C for 50 hours. 0212928
- Example 4 the same manner as in Example 1, using D 2 lamp as the light source, the birefringence measured by birefringence measurement apparatus. The measurement was performed at approximately 280 measurement points in the in-plane region of each calcium fluoride crystal material within a diameter of 21 Omm. Table 4 shows the results. Table 4 shows the maximum and average measured values. From Table 4, it can be seen that the birefringence of each of the crystal materials is sufficiently suppressed with respect to light having wavelengths of 193 nm and 157 nm. Table 4
- FIG. 9 As shown in FIG. 9, as shown in FIG. 9, as shown in FIG. 9, after being wound around a graphite kit 516, it is placed in a cylindrical holder 514, and an internal stress generating portion provided in the holder 514 is provided. A pressing force was applied from the outside to the central axis of the calcium fluoride crystal material 511 from the outside toward the central axis of the calcium fluoride crystal material 511, thereby generating internal stress in the calcium fluoride crystal.
- the internal stress generating members 515 provided at the positions of 50 ° and 270 ° press the calcium fluoride crystal material 51 1 from the outside in the semi-monstrous direction toward the central axis 517 to form the calcium fluoride crystal material 51 1 A three-fold symmetrical compressive stress was generated at the time.
- the pressing force was about 50 N / cm 2 .
- the calcium fluoride crystal material 51 1 in a state where compressive stress is generated in each internal stress generating member 51 5 is put into the heat treatment apparatus together with the holder 51 4, and the center axis 51 7 of the calcium fluoride crystal material 51 1 is
- the heat treatment was performed so as to be uniformly heated in the circumferential direction.
- the temperature control schedule of the heat treatment is as follows: first, the temperature is increased at a rate of 50 ° C / h from 0 ° C to 1050 ° C, and the temperature is maintained at 1050 ° C for 50 hours.
- a calcium fluoride crystal material is mounted on a holder, that is, a holder in which an internal stress generating member is provided diametrically opposed, and an internal stress is generated in the calcium fluoride crystal material, and heat treatment is performed in this state. went.
- the temperature control schedule was the same as for the disk material with the upper and lower surfaces being ⁇ 1 1 1 ⁇ surfaces.
- the center axis of the calcium fluoride crystal material is A calcium fluoride crystal material is mounted on a holder to which a pressing force symmetrical four times in the circumferential direction is applied, that is, a holder provided with internal stress generating members at a rotation angle interval of 90 °.
- the temperature control schedule was the same as for the disk material with the upper and lower surfaces being ⁇ 111 ⁇ surfaces.
- the calcium fluoride crystal material was removed from the holder, and the outer periphery of the calcium fluoride crystal material was ground at a pressure of about 2 mm.
- Light having wavelengths of 193 nm and 157 nm was irradiated in the direction of the central axis of the fluorinated calcium fluoride crystal material after grinding to measure the birefringence of the calcium fluoride crystal material, respectively.
- the measurement was performed in the in-plane area of 21 O mm in diameter from the center of the calcium fluoride crystal material, moving the measurement points every 5 mm in the radial direction and every 30 ° in the circumferential direction, and a total of about 280 Went in point.
- Table 5 shows the results.
- Table 5 shows the maximum and average measured values.
- Table 5 shows that the amount of birefringence was sufficiently suppressed for all crystal materials.
- Embodiments 1 to 3 have described examples in which the holding member for holding the lens in the optical element and the internal stress generating member for generating the internal stress in the lens are separate.
- the holding member may have an internal stress generating function, and the holding and pressing of the lens may be performed only by the holding member.
- the holder can be provided with a screw for allowing the arm of the holding member to move through the wall surface of the holder and for fixing the arm after pressing.
- the holding member can be omitted from the holder by supporting the lens with the internal stress generating member.
- calcium fluoride crystals were used as the lens forming material, but the present invention is not limited to this.
- a fluoride crystal belonging to an equiaxed crystal system such as barium fluoride and sodium fluoride
- the fluoride crystal material is cut into a disc shape from the ingot, the ⁇ 111 ⁇ , ⁇ 110 ⁇ , and ⁇ 100 ⁇ faces of the fluoride crystal are discs.
- cutting out the upper and lower surfaces has been described, cutting may be performed on surfaces other than these.
- FIG. 10 shows, as an example of an optical lithography apparatus, an exposure apparatus provided with a projection optical system accommodating the fluoride crystal lens manufactured in Example 1 above.
- FIG. 10 is a conceptual diagram of an exposure apparatus 10 for photolithography using an F 2 laser as a light source.
- 100 is F 2 laser-light source (center wavelength of 157.6 nm)
- IL is illumination optical system
- PL projection optical system
- R is reticle
- W silicon to be reduced and projected. Wafer.
- the light emitted from the light source 100 illuminates the reticle R on which the predetermined pattern is formed with uniform illuminance via the illumination optical system IL.
- the optical path between the light source 100 and the illumination optical system IL is sealed by casing (not shown), and the space from the light source 100 to the lens closest to the reticle of the illumination optical system IL is:
- An inert gas having a low absorptance of exposure light is filled.
- Reticle R is held on reticle stage RS via reticle holder RH so as to be parallel to the XY plane.
- the reticle R has a pattern to be transferred onto the wafer W. In the entire pattern area, a rectangular (slit) area having a short side along the X direction and a long side along the Y direction is illuminated.
- the reticle stage RS can move two-dimensionally along the reticle plane (that is, the XY plane), and its position coordinates are measured and controlled by a reticle interferometer RIF using a reticle moving mirror RM.
- the light passing through the pattern formed on the reticle R forms a reticle pattern image on the wafer W as a photosensitive substrate via the projection optical system PL.
- Wafer W is held on wafer stage WS via wafer table WT so as to be parallel to the XY plane.
- the wafer stage WS has a rectangular exposure area having a short side along the X direction on the wafer W and a long side along the Y direction, and a rectangular illumination area on the reticle R.
- the position coordinates of the wafer table WT are measured and controlled by the wafer interferometer WIF using the wafer moving mirror WM.
- the interior of the projection optical system P is configured to maintain an airtight state, and the interior space is filled with an inert gas.
- the optical elements 110a, 110b, and 110c with holders manufactured in Example 1 project the respective holders.
- Optical system Installed by mounting on the lens barrel of PL. In a narrow optical path between the illumination optical system IL and the projection optical system PL, a reticle R and a reticle stage RS are arranged.
- the inside of a casing (not shown) that hermetically surrounds the reticle R and the reticle stage RS is filled with an inert gas.
- an atmosphere in which the exposure light is hardly absorbed is formed over the entire optical path from the light source 100 to the wafer W.
- the illumination area on the reticle R and the exposure area on the reticle W illuminated via the projection optical system PL have a rectangular shape having a short side along the X direction. Therefore, while controlling the position of the reticle R and the wafer W using a drive system and an interferometer (RIF, WIF), etc., the reticle stage RS along the short side direction of the rectangular illumination area and the exposure area, ie, along the X direction.
- RIF interferometer
- the wafer stage WS and the wafer stage synchronously By moving (scanning) the wafer stage WS and the wafer stage synchronously, it has a width on the wafer W equal to the long side of the exposure area and a length corresponding to the amount of movement (scanning) of the wafer W.
- the reticle pattern is scan-exposed to the region having. P02 12928
- the exposure apparatus having such a configuration, it is possible to realize an optical lithography capable of obtaining a fine and clear pattern.
- the optical elements 110a, 110b and 110c with holders manufactured in Example 1 are directly mounted on the barrel of the projection optical system PL as shown in FIG. This makes it possible to assemble the projection optical system while maintaining good imaging characteristics of the lens.
- the imaging characteristics of the projection optical system can be controlled by adjusting the stress generating member provided on the holder, which is advantageous in terms of maintenance.
- the details of the structure of the exposure apparatus that can be used for the lens made of the fluoride crystal manufactured in the above-mentioned embodiment not only for the lens for the projection optical system but also for various lenses used in the illumination optical system are described in, for example, US Pat. 4 0, 4 4 1 B 1 and 6, 3 9 1, 5 0 3 B 2, and where permitted by national laws or regulations of the designated or elected country of the international application, these The content of the US patent is incorporated herein by reference.
- fluoride crystal material and the optical device (optical element) of the present invention it is possible to minimize the influence of the intrinsic birefringence of the fluoride crystal on the optical performance.
- fluoride crystal material for example, when using a projection exposure apparatus, in particular A r F laser or F 2 laser as a projection lens material for use in a projection exposure apparatus whose light source, to improve the Strehl value And high-resolution exposure.
- the optical device of the present invention since the imaging characteristics of the lens are adjusted by the holder, the work of assembling the lens and the adjustment and maintenance of the optical characteristics are facilitated.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Epidemiology (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02786076A EP1464992A1 (en) | 2001-12-10 | 2002-12-10 | Fluoride crystal material for optical device used for photolithographic apparatus and its manufacturing method |
AU2002354150A AU2002354150A1 (en) | 2001-12-10 | 2002-12-10 | Fluoride crystal material for optical device used for photolithographic apparatus and its manufacturing method |
JP2003555243A JPWO2003054590A1 (ja) | 2001-12-10 | 2002-12-10 | 光リソグラフィー装置に用いられる光学素子用のフッ化物結晶材料及びその製造方法 |
US10/862,473 US20040223212A1 (en) | 2001-12-10 | 2004-06-08 | Fluoride crystal material for optical element to be used for photolithography apparatus and method for producing the same |
Applications Claiming Priority (2)
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JP2001375775 | 2001-12-10 | ||
JP2001-375775 | 2001-12-10 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/862,473 Continuation US20040223212A1 (en) | 2001-12-10 | 2004-06-08 | Fluoride crystal material for optical element to be used for photolithography apparatus and method for producing the same |
Publications (1)
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WO2003054590A1 true WO2003054590A1 (fr) | 2003-07-03 |
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ID=19184087
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PCT/JP2002/012928 WO2003054590A1 (fr) | 2001-12-10 | 2002-12-10 | Materiau en cristal de fluorure pour un dispositif optique utilise pour un materiel photolithographique et son procede de fabrication |
Country Status (5)
Country | Link |
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US (1) | US20040223212A1 (ja) |
EP (1) | EP1464992A1 (ja) |
JP (1) | JPWO2003054590A1 (ja) |
AU (1) | AU2002354150A1 (ja) |
WO (1) | WO2003054590A1 (ja) |
Cited By (1)
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JP2015515142A (ja) * | 2012-04-17 | 2015-05-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 特にマイクロリソグラフィ投影露光装置の光学系 |
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US8014069B2 (en) * | 2005-04-01 | 2011-09-06 | University Of Rochester | Polarization converter, optical system, method and applications |
US20070115551A1 (en) * | 2005-04-01 | 2007-05-24 | Alexis Spilman | Space-variant waveplate for polarization conversion, methods and applications |
DE102005059531A1 (de) * | 2005-12-13 | 2007-06-14 | Schott Ag | Herstellung hochreiner, besonders strahlungsbeständiger großvolumiger Einkristalle aus Kristallscherben |
US8894227B2 (en) * | 2008-01-30 | 2014-11-25 | The Regents Of The University Of California | Method and apparatus for correcting optical aberrations using a deformable mirror |
CN110603695B (zh) * | 2017-06-13 | 2022-03-15 | 极光先进雷射株式会社 | 激光装置和光学元件的制造方法 |
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- 2002-12-10 JP JP2003555243A patent/JPWO2003054590A1/ja not_active Withdrawn
- 2002-12-10 AU AU2002354150A patent/AU2002354150A1/en not_active Abandoned
- 2002-12-10 EP EP02786076A patent/EP1464992A1/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
---|---|
EP1464992A1 (en) | 2004-10-06 |
JPWO2003054590A1 (ja) | 2005-04-28 |
US20040223212A1 (en) | 2004-11-11 |
AU2002354150A1 (en) | 2003-07-09 |
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