WO2003054247A3 - Gaz de nettoyage pour equipement de production de semi-conducteurs et procede de nettoyage faisant appel a ce gaz - Google Patents
Gaz de nettoyage pour equipement de production de semi-conducteurs et procede de nettoyage faisant appel a ce gaz Download PDFInfo
- Publication number
- WO2003054247A3 WO2003054247A3 PCT/JP2002/013002 JP0213002W WO03054247A3 WO 2003054247 A3 WO2003054247 A3 WO 2003054247A3 JP 0213002 W JP0213002 W JP 0213002W WO 03054247 A3 WO03054247 A3 WO 03054247A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cleaning
- gas
- production equipment
- semiconductor production
- semiconductor
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-7009691A KR20040065154A (ko) | 2001-12-13 | 2002-12-12 | 반도체 제조장치용 클리닝가스 및 이 가스를 사용한클리닝방법 |
US10/250,924 US20040231695A1 (en) | 2001-12-13 | 2002-12-12 | Cleaning gas for semiconductor production equipment and cleaning method using the gas |
AU2002366920A AU2002366920A1 (en) | 2001-12-13 | 2002-12-12 | Cleaning gas composition for semiconductor production equipment and cleaning method using the gas |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001379401A JP2003178986A (ja) | 2001-12-13 | 2001-12-13 | 半導体製造装置のクリーニングガスおよびクリーニング方法 |
JP2001-379401 | 2001-12-13 | ||
US39162202P | 2002-06-27 | 2002-06-27 | |
US60/391,622 | 2002-06-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003054247A2 WO2003054247A2 (fr) | 2003-07-03 |
WO2003054247A3 true WO2003054247A3 (fr) | 2004-02-26 |
Family
ID=26625031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/013002 WO2003054247A2 (fr) | 2001-12-13 | 2002-12-12 | Gaz de nettoyage pour equipement de production de semi-conducteurs et procede de nettoyage faisant appel a ce gaz |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040231695A1 (fr) |
KR (1) | KR20040065154A (fr) |
AU (1) | AU2002366920A1 (fr) |
WO (1) | WO2003054247A2 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4272486B2 (ja) * | 2003-08-29 | 2009-06-03 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成装置の洗浄方法 |
US7581549B2 (en) | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
CN100393913C (zh) * | 2005-12-09 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种多晶硅刻蚀中的干法清洗工艺 |
US20080142046A1 (en) * | 2006-12-13 | 2008-06-19 | Andrew David Johnson | Thermal F2 etch process for cleaning CVD chambers |
US9627180B2 (en) * | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
WO2011141516A2 (fr) * | 2010-05-11 | 2011-11-17 | Ultra High Vaccum Solutions Ltd. T/A Nines Engineering | Procédé et appareil pour contrôler la modification de texture superficielle de tranches de silicium pour des dispositifs de cellule photovoltaïque |
JP5751895B2 (ja) * | 2010-06-08 | 2015-07-22 | 株式会社日立国際電気 | 半導体装置の製造方法、クリーニング方法および基板処理装置 |
RU2522662C2 (ru) * | 2011-08-03 | 2014-07-20 | Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") | Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора |
JP6210039B2 (ja) * | 2014-09-24 | 2017-10-11 | セントラル硝子株式会社 | 付着物の除去方法及びドライエッチング方法 |
US20190157051A1 (en) * | 2017-11-20 | 2019-05-23 | Lam Research Corporation | Method for cleaning chamber |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS64728A (en) * | 1987-03-20 | 1989-01-05 | Canon Inc | Forming method of deposit film |
JPH03183125A (ja) * | 1983-09-22 | 1991-08-09 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
JPH0697075A (ja) * | 1992-09-14 | 1994-04-08 | Toshiba Corp | 薄膜堆積室のプラズマクリーニング方法 |
JPH1072672A (ja) * | 1996-07-09 | 1998-03-17 | Applied Materials Inc | 非プラズマ式チャンバクリーニング法 |
US5756400A (en) * | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
JPH11181569A (ja) * | 1997-12-22 | 1999-07-06 | Ulvac Corp | フッ素ガスを用いた選択cvd方法 |
EP1138802A2 (fr) * | 2000-03-27 | 2001-10-04 | Applied Materials, Inc. | Procédé pour nettoyer une chambre de traitement de semi-conducteurs utilisant fluor |
WO2001098555A1 (fr) * | 2000-06-21 | 2001-12-27 | Messer Griesheim Gmbh | Procede et dispositif pour nettoyer un reacteur de depot physique en phase vapeur ou de depot chimique en phase vapeur, ainsi que ses conduites de gaz brules |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
US6366346B1 (en) * | 1998-11-19 | 2002-04-02 | Applied Materials, Inc. | Method and apparatus for optical detection of effluent composition |
US6358327B1 (en) * | 1999-06-29 | 2002-03-19 | Applied Materials, Inc. | Method for endpoint detection using throttle valve position |
US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
JP2002129334A (ja) * | 2000-10-26 | 2002-05-09 | Applied Materials Inc | 気相堆積装置のクリーニング方法及び気相堆積装置 |
US6810886B2 (en) * | 2001-05-24 | 2004-11-02 | Applied Materials, Inc. | Chamber cleaning via rapid thermal process during a cleaning period |
US7159597B2 (en) * | 2001-06-01 | 2007-01-09 | Applied Materials, Inc. | Multistep remote plasma clean process |
-
2002
- 2002-12-12 KR KR10-2003-7009691A patent/KR20040065154A/ko not_active Application Discontinuation
- 2002-12-12 WO PCT/JP2002/013002 patent/WO2003054247A2/fr active Application Filing
- 2002-12-12 US US10/250,924 patent/US20040231695A1/en not_active Abandoned
- 2002-12-12 AU AU2002366920A patent/AU2002366920A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183125A (ja) * | 1983-09-22 | 1991-08-09 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
JPS64728A (en) * | 1987-03-20 | 1989-01-05 | Canon Inc | Forming method of deposit film |
JPH0697075A (ja) * | 1992-09-14 | 1994-04-08 | Toshiba Corp | 薄膜堆積室のプラズマクリーニング方法 |
US5756400A (en) * | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
JPH1072672A (ja) * | 1996-07-09 | 1998-03-17 | Applied Materials Inc | 非プラズマ式チャンバクリーニング法 |
JPH11181569A (ja) * | 1997-12-22 | 1999-07-06 | Ulvac Corp | フッ素ガスを用いた選択cvd方法 |
EP1138802A2 (fr) * | 2000-03-27 | 2001-10-04 | Applied Materials, Inc. | Procédé pour nettoyer une chambre de traitement de semi-conducteurs utilisant fluor |
WO2001098555A1 (fr) * | 2000-06-21 | 2001-12-27 | Messer Griesheim Gmbh | Procede et dispositif pour nettoyer un reacteur de depot physique en phase vapeur ou de depot chimique en phase vapeur, ainsi que ses conduites de gaz brules |
Non-Patent Citations (5)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 013, no. 166 (E - 746) 20 April 1989 (1989-04-20) * |
PATENT ABSTRACTS OF JAPAN vol. 015, no. 434 (E - 1129) 6 November 1991 (1991-11-06) * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 359 (E - 1574) 6 July 1994 (1994-07-06) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 08 30 June 1998 (1998-06-30) * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) * |
Also Published As
Publication number | Publication date |
---|---|
US20040231695A1 (en) | 2004-11-25 |
AU2002366920A1 (en) | 2003-07-09 |
AU2002366920A8 (en) | 2003-07-09 |
KR20040065154A (ko) | 2004-07-21 |
WO2003054247A2 (fr) | 2003-07-03 |
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