WO2003043188A1 - Resonateur baw et filtre baw passives - Google Patents

Resonateur baw et filtre baw passives Download PDF

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Publication number
WO2003043188A1
WO2003043188A1 PCT/EP2002/011425 EP0211425W WO03043188A1 WO 2003043188 A1 WO2003043188 A1 WO 2003043188A1 EP 0211425 W EP0211425 W EP 0211425W WO 03043188 A1 WO03043188 A1 WO 03043188A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
layer
baw resonator
baw
resonator according
Prior art date
Application number
PCT/EP2002/011425
Other languages
German (de)
English (en)
Inventor
Robert Aigner
Guenter Ehrler
Lueder Elbrecht
Andreas Meckes
Winfried Nessler
Alfred Niklas
Hans-Joerg Timme
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2003043188A1 publication Critical patent/WO2003043188A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors

Definitions

  • the present invention relates to BAW resonators
  • the present invention relates to a passivated BAW resonator. Furthermore, the present invention relates to BAW filters which include such BAW resonators.
  • An exemplary filter configuration is the bandpass filter, which is used, among other things, in mobile communication devices. For this application, it is necessary for SAW filters to be hermetically installed in a housing.
  • BAW filter arrangements such as BAW bandpass filters.
  • Hermetic housings e.g. Ceramic housings, however, are disadvantageous for BAW filter arrangements, since they can only be manufactured with great effort. Therefore, non-hermetic housings, e.g. Plastic housings common in HF applications, preferred to hermetic housings, since they are much easier, smaller and cheaper to manufacture. Since it is the housing that significantly influences the filter production costs, the use of non-hermetic housings is desirable and imperative in order to be able to further save production costs in the future.
  • BAW filters consist of circuits that were built using BAW resonators.
  • a BAW resonator is basically a piezoelectric layer that is between two E- electrodes is arranged. Both electrodes consist of a single metal layer or a multilayer metallization.
  • Typical piezoelectric materials for the piezoelectric layer (active layer) are PZT (lead zirconium titanate), ZnO (zinc oxide) and A1N (aluminum nitride).
  • Typical metals used for the electrodes include e.g. B. AI (aluminum) and W (tungsten).
  • the electrodes of a BAW resonator preferably have a high conductivity in order to conduct a resonator current without significant ohmic losses (parasitic effects).
  • the electrodes since the electrodes not only have an electrical function, but at the same time also determine the acoustic properties of the resonator, they cannot be optimized solely from an electrical point of view. So would be B. Sufficiently thick Al layers are suitable for minimizing ohmic (parasitic) losses if, on the other hand, they do not have important properties such as, for example, the load on the resonator. B. would worsen the bandwidth.
  • the electrodes also influence the resonance frequencies of a BAW resonator.
  • the BAW resonator is used in a non-hermetic housing, reliability problems can arise. This is especially true when the top layer of the top electrode is made of Al or another base metal. In contrast to hermetic housings, moisture enters into non-hermetic housings. , This moisture itself does not have to attack the electrode. However, condensation of moisture occurs in the non-hermetic housing, e.g. B. causes water droplets to form on the electrode. With AI electrodes z. B. there is a reaction (corrosion) which leads to decomposition of the electrode, which in turn leads to a change in the resonator properties (frequency, quality, etc.).
  • Another problem with water droplets arises during the manufacture of the BAW resonators, in which a large number of individual BAW resonators are generally formed on a wafer and are separated at the end of the manufacture.
  • the wafers are sawn using cooling or rinsing water, which causes the problems outlined above when it hits the electrodes.
  • the present invention has for its object to provide a BAW resonator that has a high level of reliability without a hermetic housing.
  • the present invention provides a BAW resonator with
  • a first electrode arranged on a surface of the substrate
  • a piezoelectric layer that is at least partially arranged on the first electrode
  • a second electrode which is arranged at least partially on the piezoelectric layer and at least partially overlapping with the first electrode
  • a passivation layer which is arranged on the second electrode in order to protect the second electrode.
  • a BAW filter is created which comprises one or more of the BAW resonators according to the invention.
  • the present invention is based on the finding that the required protection for the electrode can be achieved by adding an acoustically thin passivation film to the surface of the upper electrode of a BAW resonator.
  • This additional layer is not required to achieve proper functioning of the BAW resonator, nor is it necessary to achieve reliable operation when the BAW resonator is housed in a hermetic housing, such as in a ceramic housing with a soldered or welded metal lid.
  • a hermetic housing can be dispensed with, and nevertheless optimal protection of the BAW resonator can be achieved by protecting the upper electrode of the BAW resonator with a thin passivation film.
  • Silicon oxide or silicon nitride or TiN (titanium nitride) is advantageously used as the material for this passivation film.
  • Precious metals, such as B. gold or platinum can also be used. It is important that the passivation film is quite thin in order to avoid a deterioration in the resonator behavior, in particular in the bandwidth (mass charge effect).
  • the passivation film is preferably already taken into account in the design of the BAW resonator in order to keep its acoustic influence on the resonator behavior low or to take it into account.
  • the thickness of the passivation layer is preferably between 20 nm and 200 nm.
  • aluminum nitride (A1N) is used as the piezoelectric material for the piezoelectric layer, which is provided with opposite aluminum electrodes (where both electrodes can also be multi-layer electrodes in which different materials are used).
  • a silicon nitride layer is provided as the upper passivation layer, a typical thickness of this silicon nitride layer preferably being between 20 nm and 100 nm.
  • the present invention offers the advantage that the upper electrode of a BAW resonator withstands environmental influences even in the unhoused or in the non-hermetically sealed state. Furthermore, due to the protective effect of the upper layer, the high conductivity of the electrode underneath is retained, so that the resonator current can be conducted without significant losses.
  • the upper electrode is also protected during process steps during the manufacture of the individual BAW resonators, such as, for example, against electrochemical corroding due to the water that is used when sawing the wafers.
  • the applied passivation layer can be used to set a frequency of the BAW resonator to a desired target frequency.
  • the passivation layer can be used to set a detuning with respect to a desired frequency in a BAW resonator, as is required for filter arrangements that use a plurality of BAW resonators.
  • One example is the so-called ladder topology for bandpass filters, in which all parallel resonators are detuned from the series resonators in order to achieve the desired bandpass filter effect.
  • the so-called parallel resonance of the parallel resonators must correspond to the so-called series resonance of the series resonators, ie the frequency detuning between the series and parallel resonators essentially corresponds to the resonator Bandwidth (the frequency distance between the two resonance frequencies of a resonator).
  • FIG. 1 shows a first exemplary embodiment of a BAW resonator according to the invention.
  • FIG. 2 shows a second exemplary embodiment of a BAW resonator according to the invention.
  • the BAW resonator 100 comprises a substrate 102, which has a first, lower main surface 104 and a second, upper
  • Main surface 106 includes.
  • a first, lower electrode 108 is formed on the second main surface 106 and is made of aluminum in the exemplary embodiment shown. Furthermore, an insulating section 110 is shown, which is also on the upper main surface 106 of the
  • Substrate 100 is arranged.
  • a piezoelectric layer 112 which is an AIN layer in the exemplary embodiment described, is applied to a section of the lower electrode 108 and to the insulating section 110.
  • a second, upper electrode 114 also made of aluminum, is formed on a section of the side of the piezoelectric layer 112 facing away from the substrate 100.
  • the BAW resonator or the active region thereof is formed by the region of the piezoelectric layer 112 in which the lower electrode 108 and the upper electrode 114 overlap.
  • the lower electrode 108 comprises a section which extends from the piezoelectric layer 112, that is to say is not covered by the same.
  • a first connection 116 (input or output) is provided, via which the BAW resonator 100 can be connected with a wire 118 (optional).
  • the upper electrode 114 is also pulled out in a section, this section lying opposite the insulating section 110.
  • a second connection 120 (output or input) is provided, via which the BAW resonator 100 can be connected via a wire 122 (optional).
  • the BAW resonator is electrically connected to other components via the connections 116 and 120.
  • the substrate comprises a reflector section 124, in which an acoustic reflector 126 is arranged, which has a plurality of individual layers 126a to 126c, which alternately have a high acoustic impedance and a low acoustic impedance.
  • the BAW resonator arrangement arranged above is acoustically decoupled from the portions of the substrate 102 lying under the reflector 126.
  • the surface of the upper electrode 114 facing away from the piezoelectric layer 112 is covered with a passivation layer 128. Basically, it is sufficient to use only the upper surface of the electrode 114
  • the layer thicknesses of the layers 108, 112, 114 are usually in the um or nm range, the flank regions are not very critical and do not necessarily have to be covered by the passivation layer.
  • the passivation layer 124 can also cover the entire exposed surface of the Cover layer sequence 110, 112.
  • the contacts 116, 120 are preferably formed after the passivation layer has been applied by exposing corresponding areas in the same.
  • the passivation layer 128 is a silicon nitride layer in the exemplary embodiment shown.
  • an aluminum nitride material was used for the piezoelectric layer, which does not deteriorate in moist environments, and is in particular corrosion-resistant.
  • Aluminum is also used as the material for the electrode layers, which is readily available in standard semiconductor manufacturing processes, offers high conductivity and can also be used as pad metallization (see FIG. 1).
  • exemplary embodiments include the cases in which the lower electrode 108 is made of a different material or is a multilayer electrode, and the cases in which the upper electrode 114 is made of a different material or is a multilayer electrode.
  • a typical thickness of the silicon nitride film is between 20 nm and 200 nm.
  • a BAW resonator or a BAW filter arrangement which comprises a plurality of BAW resonators, each comprising upper electrodes made of aluminum without a passivation layer, was initially enclosed in a non-hermetic housing.
  • the non-hermetic isolation of the individual BAW resonators led to corrosion of the upper aluminum electrodes due to the precipitation occurring in the housing, so that the BAW filters housed in this way were no longer functional because their filter characteristics had changed.
  • the present invention offers the advantage that only a thin film, e.g. B. of silicon nitride, is sufficient to ensure very good protection of the upper electrode.
  • This thin passivation film is also acoustically thin, i.e. it only influences the resonance behavior of the resonator to a small extent.
  • Another advantage of using the very thin passivation film is that it can be used specifically to improve the temperature coefficient for temperature shifts (TCF).
  • the approach taught by the present invention to use passivation layers in BAW resonators has never been pursued, since it has always been assumed that passivation layers influence the acoustic behavior of the BAW resonators too strongly, and in particular significantly worsen the bandwidth.
  • the present invention teaches a very thin passivation film, which develops the required protective effect, but has essentially no influence on the acoustic properties of the BAW resonator.
  • thick passivation stacks made of silicon nitride and silicon oxide, as z In contrast to thick passivation stacks made of silicon nitride and silicon oxide, as z.
  • the main aspect of the passivation layers on a BAW filter is not to prevent alkali ions from diffusing into the substrate, but rather to prevent corrosion of the upper electrode. be prevented. A certain diffusion rate and even so-called pinhole defects are acceptable as long as no corrosion of the electrode is found.
  • FIG. 2 shows a BAW resonator 200, which in turn comprises a substrate 102, on the upper surface 106 of which a first electrode 108 is formed.
  • the piezoelectric layer 112, on which the upper electrode 114 of the BAW resonator was produced, is in turn formed on this electrode.
  • the passivation layer 128 is completely deposited on the surface of the arrangement, so that, in addition to the upper electrode 114, the exposed sections of the upper surface 106 of the substrate 102 and the side walls of the
  • Layer stacks 108, 112, 114 are covered by the passivation layer 128.
  • This deposition of the passivation layer is to be preferred in terms of design and production technology, since it enables complete protection of the wafer or chip surface to be achieved in one operation (the contact surfaces of the pads of course having to be opened).
  • the membrane area 132 consists of a
  • Support membrane made of the substrate material on which the actual resonator consists of a piezoelectric layer with lower and upper electrodes.
  • Such arrangements can be manufactured using the so-called volume micromechanics (bulk micromachining).
  • the support membrane consists of a thin deposited layer such as polysilicon or silicon nitride, and the ent by a thin cavity on the substrate material ⁇ are coupled.
  • Such membrane solutions can be produced by means of surface micromachining.
  • membrane structures are possible in which the membrane consists purely of the piezoelectric material including the lower and upper electrodes and dispenses with a carrier membrane.
  • the passivation layer 128 can also be used to adjust or to detune the resonance frequencies of the BAW resonator. For this it is generally necessary to adjust the thickness of the passivation layer accordingly.
  • the present invention is not restricted to these materials.
  • the passivation layer can generally be produced from an oxide layer, a nitride layer, a combination thereof or from a noble metal.
  • the passivation layer preferably consists of silicon oxide, silicon nitride, A1 2 0 3 , Ta 2 0 3 , TiN, Au or Pt.
  • TiN titanium nitride
  • Au gold
  • PT conductive materials
  • the passivation layer preferably has a thickness of approximately 20 nm to 200 nm. These thicknesses can also be larger or smaller as long as it is ensured that the applied passivation layer does not impermissibly impair the acoustic properties of the BAW resonator.
  • the piezoelectric layer 112 can be formed, for example, by a first layer and a second layer, the first layer comprising a piezoelectric material with a first orientation and the second layer comprising a piezoelectric material with a second orientation u, the directions of orientation of the two materials being opposite are.
  • the two layers in the layer sequence 112 are acoustically coupled.
  • the piezoelectric layer can consist of one material, e.g. B.
  • the piezoelectric layer 112 can also comprise a plurality of first and second layers or first and second sections which are alternately acoustically coupled to one another.
  • multi-layer electrodes can also be used, which then have different materials, e.g. B. Materials with different acoustic impedance (e.g. AI, W) alternately.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Résonateur à ondes acoustiques en volume (BAW) qui comporte un substrat (102), une première électrode (108) placée sur une surface (106) du substrat (102), une couche piézo-électrique (112) placée au moins partiellement sur la première électrode (108) et une seconde électrode (114) qui est placée au moins en partie sur la couche piézo-électrique (112) et qui chevauche au moins en partie la première électrode (108). En outre, une couche de passivation (128) est appliquée sur la seconde électrode (114) pour protéger cette dernière.
PCT/EP2002/011425 2001-11-14 2002-10-11 Resonateur baw et filtre baw passives WO2003043188A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001155927 DE10155927A1 (de) 2001-11-14 2001-11-14 Passivierter BAW-Resonator und BAW-Filter
DE10155927.5 2001-11-14

Publications (1)

Publication Number Publication Date
WO2003043188A1 true WO2003043188A1 (fr) 2003-05-22

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2391408A (en) * 2002-07-30 2004-02-04 Agilent Technologies Inc FBAR thin-film resonator with protective layer
WO2005034345A1 (fr) * 2003-10-06 2005-04-14 Philips Intellectual Property & Standards Gmbh Structure de resonateur et son procede de fabrication
GB2424775A (en) * 2004-12-22 2006-10-04 Agilent Technologies Inc Thin film acoustic resonator suppresses parasitic modes to improve Q
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US8618620B2 (en) 2010-07-13 2013-12-31 Infineon Technologies Ag Pressure sensor package systems and methods
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature

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EP0865157A2 (fr) * 1997-03-13 1998-09-16 Nokia Mobile Phones Ltd. Filtre à ondes acoustiques de volume
EP1047189A2 (fr) * 1999-04-19 2000-10-25 Murata Manufacturing Co., Ltd. Résonateur piézoélectrique
US6249074B1 (en) * 1997-08-22 2001-06-19 Cts Corporation Piezoelectric resonator using sacrificial layer and method of tuning same

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US4456850A (en) * 1982-02-09 1984-06-26 Nippon Electric Co., Ltd. Piezoelectric composite thin film resonator
US4638536A (en) * 1986-01-17 1987-01-27 The United States Of America As Represented By The Secretary Of The Army Method of making a resonator having a desired frequency from a quartz crystal resonator plate
US5692279A (en) * 1995-08-17 1997-12-02 Motorola Method of making a monolithic thin film resonator lattice filter
EP0865157A2 (fr) * 1997-03-13 1998-09-16 Nokia Mobile Phones Ltd. Filtre à ondes acoustiques de volume
US6249074B1 (en) * 1997-08-22 2001-06-19 Cts Corporation Piezoelectric resonator using sacrificial layer and method of tuning same
EP1047189A2 (fr) * 1999-04-19 2000-10-25 Murata Manufacturing Co., Ltd. Résonateur piézoélectrique

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2391408A (en) * 2002-07-30 2004-02-04 Agilent Technologies Inc FBAR thin-film resonator with protective layer
WO2005034345A1 (fr) * 2003-10-06 2005-04-14 Philips Intellectual Property & Standards Gmbh Structure de resonateur et son procede de fabrication
US7466213B2 (en) 2003-10-06 2008-12-16 Nxp B.V. Resonator structure and method of producing it
KR101130145B1 (ko) * 2003-10-06 2012-03-28 엔엑스피 비 브이 공진기 구조체, 필터, 공진기 구조체의 제조 방법과 이들을사용하는 송/수신기
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
GB2424775A (en) * 2004-12-22 2006-10-04 Agilent Technologies Inc Thin film acoustic resonator suppresses parasitic modes to improve Q
GB2424775B (en) * 2004-12-22 2009-05-13 Agilent Technologies Inc Acoustic resonators
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8618620B2 (en) 2010-07-13 2013-12-31 Infineon Technologies Ag Pressure sensor package systems and methods
US11192777B2 (en) 2010-07-13 2021-12-07 Infineon Technologies Ag MEMS sensor package systems and methods
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9859205B2 (en) 2011-01-31 2018-01-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature

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Publication number Publication date
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