WO2003029767A1 - Appareil de detection d'impulsions electroniques et puce de detection d'impulsions electroniques - Google Patents

Appareil de detection d'impulsions electroniques et puce de detection d'impulsions electroniques Download PDF

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Publication number
WO2003029767A1
WO2003029767A1 PCT/JP2002/009978 JP0209978W WO03029767A1 WO 2003029767 A1 WO2003029767 A1 WO 2003029767A1 JP 0209978 W JP0209978 W JP 0209978W WO 03029767 A1 WO03029767 A1 WO 03029767A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic pulse
pulse detection
mcp
anode
detection
Prior art date
Application number
PCT/JP2002/009978
Other languages
English (en)
French (fr)
Inventor
Takayoshi Yumii
Kyoji Doi
Noriaki Kimura
Original Assignee
Mitsui Engineering & Shipbuilding Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering & Shipbuilding Co., Ltd. filed Critical Mitsui Engineering & Shipbuilding Co., Ltd.
Priority to CA2461302A priority Critical patent/CA2461302C/en
Priority to US10/489,422 priority patent/US6984815B2/en
Priority to EP02768094A priority patent/EP1441207B1/en
Priority to KR1020047003713A priority patent/KR100934148B1/ko
Publication of WO2003029767A1 publication Critical patent/WO2003029767A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
    • H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
PCT/JP2002/009978 2001-09-27 2002-09-26 Appareil de detection d'impulsions electroniques et puce de detection d'impulsions electroniques WO2003029767A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA2461302A CA2461302C (en) 2001-09-27 2002-09-26 Electronic pulse detection apparatus and electronic pulse detection chip
US10/489,422 US6984815B2 (en) 2001-09-27 2002-09-26 Electronic pulse detection apparatus and electronic pulse detection chip
EP02768094A EP1441207B1 (en) 2001-09-27 2002-09-26 Electronic pulse detection apparatus and electronic pulse detection chip
KR1020047003713A KR100934148B1 (ko) 2001-09-27 2002-09-26 전자 펄스 검출 장치 및 전자 펄스 검출 칩

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001296036A JP4897164B2 (ja) 2001-09-27 2001-09-27 電子パルス検出装置および電子パルス検出チップ
JP2001-296036 2001-09-27

Publications (1)

Publication Number Publication Date
WO2003029767A1 true WO2003029767A1 (fr) 2003-04-10

Family

ID=19117354

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009978 WO2003029767A1 (fr) 2001-09-27 2002-09-26 Appareil de detection d'impulsions electroniques et puce de detection d'impulsions electroniques

Country Status (6)

Country Link
US (1) US6984815B2 (ja)
EP (1) EP1441207B1 (ja)
JP (1) JP4897164B2 (ja)
KR (1) KR100934148B1 (ja)
CA (1) CA2461302C (ja)
WO (1) WO2003029767A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3890210B2 (ja) * 2000-08-11 2007-03-07 キヤノン株式会社 画像撮影装置及び画像撮影装置の制御方法
US7326900B2 (en) * 2002-11-18 2008-02-05 Mitsui Engineering & Shipbuilding Co., Ltd. Two-dimensional weak radiation detector with a detection means based on orthogonal modulation
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
US9228947B2 (en) * 2009-10-23 2016-01-05 Koninklijke Philips N.V. Device for monitoring a plurality of discrete fluorescence signals
DE102011077056A1 (de) 2011-06-07 2012-12-13 Siemens Aktiengesellschaft Strahlungsdetektor und bildgebendes System
CN105609511B (zh) * 2014-11-21 2019-01-15 中国科学院微电子研究所 一种单光子成像探测器及其制造方法
JP7100549B2 (ja) * 2018-09-25 2022-07-13 浜松ホトニクス株式会社 高エネルギ線検出器および断層画像取得装置
CN111037586A (zh) * 2019-12-27 2020-04-21 深圳市越疆科技有限公司 多组件系统及机器人设备
CN113794847B (zh) * 2021-09-23 2023-05-09 华东光电集成器件研究所 一种用于电子倍增ccd的多路可调脉冲信号源

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956181A (ja) * 1982-09-25 1984-03-31 Shimadzu Corp リング型シングルフオトンｅｃｔ装置
JPS60187878A (ja) * 1984-03-08 1985-09-25 Res Dev Corp Of Japan 半導体放射線分布検出装置
JPH05211321A (ja) * 1991-10-25 1993-08-20 Canon Inc アバランシェフォトダイオード、及びそれを具備する信号処理装置
JPH10290015A (ja) * 1997-04-16 1998-10-27 Yokogawa Electric Corp 光電変換装置
JP2000058808A (ja) * 1998-08-07 2000-02-25 Sharp Corp 二次元画像検出器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69205100T2 (de) * 1991-07-24 1996-03-21 Hamamatsu Photonics Kk Vorrichtung zur Schwachlichtmessung.
JPH0697408A (ja) * 1992-09-10 1994-04-08 Canon Inc 光電変換装置及びその製造方法
US6285018B1 (en) * 1999-07-20 2001-09-04 Intevac, Inc. Electron bombarded active pixel sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956181A (ja) * 1982-09-25 1984-03-31 Shimadzu Corp リング型シングルフオトンｅｃｔ装置
JPS60187878A (ja) * 1984-03-08 1985-09-25 Res Dev Corp Of Japan 半導体放射線分布検出装置
JPH05211321A (ja) * 1991-10-25 1993-08-20 Canon Inc アバランシェフォトダイオード、及びそれを具備する信号処理装置
JPH10290015A (ja) * 1997-04-16 1998-10-27 Yokogawa Electric Corp 光電変換装置
JP2000058808A (ja) * 1998-08-07 2000-02-25 Sharp Corp 二次元画像検出器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1441207A4 *

Also Published As

Publication number Publication date
US6984815B2 (en) 2006-01-10
JP2003098006A (ja) 2003-04-03
EP1441207A1 (en) 2004-07-28
JP4897164B2 (ja) 2012-03-14
KR100934148B1 (ko) 2009-12-29
EP1441207B1 (en) 2013-03-06
EP1441207A4 (en) 2006-11-08
CA2461302C (en) 2011-04-19
CA2461302A1 (en) 2003-04-10
KR20040037082A (ko) 2004-05-04
US20050072898A1 (en) 2005-04-07

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