WO2003025676A1 - Materiau pour la formation de motif, et procede relatif a la formation de motif - Google Patents
Materiau pour la formation de motif, et procede relatif a la formation de motif Download PDFInfo
- Publication number
- WO2003025676A1 WO2003025676A1 PCT/JP2002/009381 JP0209381W WO03025676A1 WO 2003025676 A1 WO2003025676 A1 WO 2003025676A1 JP 0209381 W JP0209381 W JP 0209381W WO 03025676 A1 WO03025676 A1 WO 03025676A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pattern
- forming
- forming material
- chemical formula
- formula
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02765525A EP1403711A4 (en) | 2001-09-13 | 2002-09-12 | STRUCTURE EDUCATION MATERIAL AND STRUCTURAL EDUCATION METHOD |
US10/415,272 US7041428B2 (en) | 2001-09-13 | 2002-09-12 | Pattern-forming material and method of forming pattern |
JP2003529245A JP3893380B2 (ja) | 2001-09-13 | 2002-09-12 | パターン形成材料及びパターン形成方法 |
KR10-2003-7008720A KR100524448B1 (ko) | 2001-09-13 | 2002-09-12 | 패턴형성재료 및 패턴형성방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-277589 | 2001-09-13 | ||
JP2001277589 | 2001-09-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003025676A1 true WO2003025676A1 (fr) | 2003-03-27 |
Family
ID=19102094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/009381 WO2003025676A1 (fr) | 2001-09-13 | 2002-09-12 | Materiau pour la formation de motif, et procede relatif a la formation de motif |
Country Status (7)
Country | Link |
---|---|
US (1) | US7041428B2 (ja) |
EP (1) | EP1403711A4 (ja) |
JP (1) | JP3893380B2 (ja) |
KR (1) | KR100524448B1 (ja) |
CN (1) | CN100337161C (ja) |
TW (1) | TW589514B (ja) |
WO (1) | WO2003025676A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016071207A (ja) * | 2014-09-30 | 2016-05-09 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物 |
JP2016170360A (ja) * | 2015-03-13 | 2016-09-23 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
JP2019052142A (ja) * | 2017-09-15 | 2019-04-04 | 住友化学株式会社 | 化合物、レジスト組成物及びレジストパターンの製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI278012B (en) * | 2001-09-13 | 2007-04-01 | Matsushita Electric Ind Co Ltd | Pattern forming material and method of pattern formation |
JP4133399B2 (ja) * | 2003-02-10 | 2008-08-13 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
EP1505439A3 (en) * | 2003-07-24 | 2005-04-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and method of forming resist pattern |
JP5035562B2 (ja) * | 2007-08-22 | 2012-09-26 | 信越化学工業株式会社 | パターン形成方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0773478A1 (en) * | 1995-11-10 | 1997-05-14 | Matsushita Electric Industrial Co., Ltd. | Patterning material and patterning method |
EP0791856A2 (en) * | 1996-02-26 | 1997-08-27 | Matsushita Electric Industrial Co., Ltd. | Pattern forming material and pattern forming method |
JPH11218926A (ja) * | 1998-02-02 | 1999-08-10 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2000330289A (ja) * | 1999-03-12 | 2000-11-30 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
US20020081524A1 (en) * | 2000-12-22 | 2002-06-27 | Yasunori Uetani | Chemical amplifying type positive resist composition |
JP2002322217A (ja) * | 2001-04-26 | 2002-11-08 | Shin Etsu Chem Co Ltd | 高分子化合物、化学増幅レジスト材料及びパターン形成方法 |
JP2002333715A (ja) * | 2000-09-26 | 2002-11-22 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4689289A (en) * | 1986-04-30 | 1987-08-25 | General Electric Company | Block polymer compositions |
JPH09189998A (ja) * | 1995-11-10 | 1997-07-22 | Matsushita Electric Ind Co Ltd | パターン形成材料及びパターン形成方法 |
JP3273897B2 (ja) * | 1996-02-26 | 2002-04-15 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
JP3198915B2 (ja) * | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
ATE237830T1 (de) * | 1996-09-02 | 2003-05-15 | Ciba Sc Holding Ag | Alkylsulfonyloxime für i-line-photoresists hoher auflösung und empfindlichkeit |
US6576392B1 (en) * | 1996-12-07 | 2003-06-10 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
DK199901098A (da) * | 1998-08-18 | 2000-02-19 | Ciba Sc Holding Ag | Sylfonyloximer til i-linie-fotoresists med høj følsomhed og høj resisttykkelse |
TWI264442B (en) * | 2002-03-25 | 2006-10-21 | Shinetsu Chemical Co | Novel esters, polymers, resist compositions and patterning process |
-
2002
- 2002-08-27 TW TW091119405A patent/TW589514B/zh not_active IP Right Cessation
- 2002-09-12 EP EP02765525A patent/EP1403711A4/en not_active Withdrawn
- 2002-09-12 CN CNB028026411A patent/CN100337161C/zh not_active Expired - Fee Related
- 2002-09-12 US US10/415,272 patent/US7041428B2/en not_active Expired - Fee Related
- 2002-09-12 WO PCT/JP2002/009381 patent/WO2003025676A1/ja active IP Right Grant
- 2002-09-12 JP JP2003529245A patent/JP3893380B2/ja not_active Expired - Fee Related
- 2002-09-12 KR KR10-2003-7008720A patent/KR100524448B1/ko not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0773478A1 (en) * | 1995-11-10 | 1997-05-14 | Matsushita Electric Industrial Co., Ltd. | Patterning material and patterning method |
EP0791856A2 (en) * | 1996-02-26 | 1997-08-27 | Matsushita Electric Industrial Co., Ltd. | Pattern forming material and pattern forming method |
JPH11218926A (ja) * | 1998-02-02 | 1999-08-10 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2000330289A (ja) * | 1999-03-12 | 2000-11-30 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2002333715A (ja) * | 2000-09-26 | 2002-11-22 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
US20020081524A1 (en) * | 2000-12-22 | 2002-06-27 | Yasunori Uetani | Chemical amplifying type positive resist composition |
JP2002322217A (ja) * | 2001-04-26 | 2002-11-08 | Shin Etsu Chem Co Ltd | 高分子化合物、化学増幅レジスト材料及びパターン形成方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1403711A4 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016071207A (ja) * | 2014-09-30 | 2016-05-09 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物 |
JP2016170360A (ja) * | 2015-03-13 | 2016-09-23 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
JP2019052142A (ja) * | 2017-09-15 | 2019-04-04 | 住友化学株式会社 | 化合物、レジスト組成物及びレジストパターンの製造方法 |
JP7129272B2 (ja) | 2017-09-15 | 2022-09-01 | 住友化学株式会社 | 化合物、レジスト組成物及びレジストパターンの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20030082560A (ko) | 2003-10-22 |
JPWO2003025676A1 (ja) | 2004-12-24 |
TW589514B (en) | 2004-06-01 |
US7041428B2 (en) | 2006-05-09 |
CN100337161C (zh) | 2007-09-12 |
KR100524448B1 (ko) | 2005-10-26 |
EP1403711A1 (en) | 2004-03-31 |
CN1524200A (zh) | 2004-08-25 |
EP1403711A4 (en) | 2007-12-12 |
US20040029035A1 (en) | 2004-02-12 |
JP3893380B2 (ja) | 2007-03-14 |
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