WO2003007386A1 - Cellule solaire en couche mince fabriquee sur un substrat metallique souple - Google Patents

Cellule solaire en couche mince fabriquee sur un substrat metallique souple Download PDF

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Publication number
WO2003007386A1
WO2003007386A1 PCT/US2001/022192 US0122192W WO03007386A1 WO 2003007386 A1 WO2003007386 A1 WO 2003007386A1 US 0122192 W US0122192 W US 0122192W WO 03007386 A1 WO03007386 A1 WO 03007386A1
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WIPO (PCT)
Prior art keywords
layer
solar cell
thin
aluminum substrate
semiconductor absorber
Prior art date
Application number
PCT/US2001/022192
Other languages
English (en)
Inventor
John R. Tuttle
Rommel Noufi
Falah S. Hasoon
Original Assignee
Midwest Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midwest Research Institute filed Critical Midwest Research Institute
Priority to PCT/US2001/022192 priority Critical patent/WO2003007386A1/fr
Priority to US10/480,880 priority patent/US7053294B2/en
Publication of WO2003007386A1 publication Critical patent/WO2003007386A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This invention relates generally to a thin-film solar cell and, more particularly, to a thin- film solar cell fabricated on a flexible metallic aluminum or stainless steel substrate with appropriate means for inhibiting reaction between the aluminum substrate and the semiconductor absorber.
  • Photovoltaic devices i.e., solar cells
  • solar cells are capable of converting solar radiation into usable electrical energy.
  • the energy conversion occurs as the result of what is known as the photovoltaic effect.
  • Solar radiation impinging on a solar cell and absorbed by an active region of semiconductor material generates electricity.
  • technologies relating to thin-film solar cells have been advanced to realize inexpensive and lightweight solar cells and, therefore, thinner solar cells manufactured with less material have been demanded. This is especially true in the space industry with the solar cells powering satellites and other space vehicles.
  • the current state of the art in solar cell design is to deposit a photoactive material onto a dense substrate.
  • the substrate was constructed of glass or a low expansion glass ceramic with densities of approximately 2.2 gms/cc (2200 mg/cc) or higher.
  • the weight of an array or battery of such prior art solar cells is a determining factor in the size of the battery system to be launched into space due to payload weight constraints.
  • Heavy solar cells increase the cost of positioning the satellite into orbit and the operating costs by reducing the payload of the satellite and increasing the launch weight.
  • a lighter weight cell substrate would provide savings in size and weight thereby translating into an increased size for satellite photovoltaic energy systems, which implies higher reliability and accessibility of the satellite throughout its life cycle.
  • the present invention is a thin-film solar cell comprising a flexible metallic substrate, either aluminum or stainless steel, having a first surface and a second surface.
  • a back metal contact layer is deposited on the first surface of the flexible metallic substrate.
  • a semiconductor absorber layer is deposited on the back metal contact layer.
  • a photoactive film is deposited on the semiconductor absorber layer forming a heterojunction structure.
  • a grid contact is deposited on the heterojunction structure.
  • the present invention additionally includes a solar cell for converting solar radiation into usable electrical energy.
  • the solar cell comprises an aluminum substrate and a semiconductor absorber. Means between the aluminum substrate and the semiconductor absorber inhibit reaction between the aluminum substrate and the semiconductor absorber.
  • the present invention further includes a method of constructing a solar cell. The method comprises providing an aluminum substrate, depositing a semiconductor absorber layer on the aluminum substrate, and insulating the aluminum substrate from the semiconductor absorber layer to inhibit reaction between the aluminum substrate and the semiconductor absorber layer.
  • Figure 1 is a sectional view of a thin-film solar cell fabricated on a flexible metallic substrate, constructed in accordance with the present invention
  • Figure 2 is a sectional view of another embodiment of the thin-film solar cell fabricated on a flexible metallic substrate, constructed in accordance with the present invention
  • Figure 3 is a sectional view of still another embodiment of the thin-film solar cell fabricated on a flexible metallic substrate, constructed in accordance with the present invention
  • Figure 4 is a sectional view of yet another embodiment of the thin-film solar cell fabricated on a flexible metallic substrate, constructed in accordance with the present invention.
  • FIG. 5 is a sectional view of still yet another embodiment of the thin-film solar cell fabricated on a flexible metallic substrate, constructed in accordance with the present invention. Detailed Description of the Preferred Embodiments
  • the present invention is a thin-film solar cell, indicated generally at 10.
  • the thin-film solar 10 cell has a flexible metallic substrate 12 preferably constructed from an Aluminum (Al) material or a stainless steel material and a semiconductor absorber layer 14 deposited on the flexible metallic substrate 12.
  • the surface of the flexible metallic substrate 12 can be polished (to benefit the film structure of the absorber layer 14 and morphology) or it may be textured (to increase the path length of the reflected light).
  • a chromium adhesion layer although not always required, can be added to increase adhesion, i.e., a chromium adhesion layer between approximately lOOA and 40 ⁇ A.
  • the flexible metallic substrate 12 can be thin and flexible, i.e., approximately 25 ⁇ m to approximately 100 ⁇ m, in order that the thin-film solar cell 10 is lightweight, or the flexible metallic substrate 12 can be thick and rigid to improve handling of the thin-film, solar cell 10.
  • the semiconductor absorber layer 14 is a deposition of high quality Cu(In, Ga)Se 2 (CIGS) thin films providing the fabrication of a high efficiency thin-film solar cell 10.
  • CIGS Cu(In, Ga)Se 2
  • Example processes of deposition of the semiconductor absorber layer 14 are described in U.S. Patent No. 5,436,204 and U.S. Patent No. 5,441,897, which are assigned to the same assignee of the present application and are hereby herein incorporated by reference.
  • the deposition of the CIGS thin film 14 onto the flexible metallic substrate 12 can be by any of a variety of common techniques including, but not limited to, evaporation, sputtering electrodeposition, chemical vapor deposition, etc.
  • the fundamental hurdle for the deposition of CIGS thin films 14 onto the Aluminum substrate 12 is that the Aluminum in the Aluminum substrate 12 reacts with the Selenium in the CIGS thin film 14 to form Al 2 Se 3 (an unstable compound in air). Furthermore, at high temperatures, the Aluminum within the Aluminum substrate 12 alloys with the Copper, Indium, and Gallium in the CIGS thin film 14. With the reaction between the Aluminum and the Copper and the alloy of Aluminum with the
  • the Aluminum substrate 12 would be essentially consumed during the deposition of the CIGS thin film 14 on the Aluminum substrate 12.
  • a requirement for a properly functioning thin-film solar cell 10 is that the substrate be inert to the film deposited on the substrate.
  • a layer of suitable back metal contact (i.e., conductive metal layer) 16 can be deposited on one or both surfaces of the Aluminum substrate 12 between the Aluminum substrate 12 and the CIGS thin film 14.
  • the back metal contact layer 16 protects and isolates the Aluminum substrate 12 from the fluxes of the Selenium in the CIGS thin film 14 during the deposition of the CIGS thin film 14 onto the Aluminum substrate 12.
  • the back metal contact layer 16 is constructed from a Molybdenum (Mo) material.
  • Molybdenum back metal contact layer 16 preferably has a thickness between approximately 0.1 ⁇ m and approximately 1.0 ⁇ m although having a Molybdenum back metal contact layer 16 with a thickness less than approximately 0.1 ⁇ m and greater than approximately 1.0 ⁇ m is within the scope of the present invention.
  • back metal contact layers 16 besides a Molybdenum back metal contact layer 16 can be used including, but not limited to, a molybdenum/ gold combination, nickel, graphite, etc., (all which have been commonly employed in conventional solar cells).
  • a seed layer 18 of In 2 Se 3 or (In,Ga) 2 Se 3 can be deposited on the Molybdenum back metal contact layer 16 which also adds protection of the Aluminum substrate 12 from the CIGS thin film 14.
  • the seed layer 18 of In 2 Se 3 is then followed by the CIGS thin film 16 deposition scheme as described in U.S. Patent No. 5,436,204 and U.S. Patent No.
  • the Molybdenum back metal contact layer 16 is sufficient to protect the Aluminum substrate 12
  • the In 2 Se 3 seed layer 18 is an added protection at the start of the CIGS thin film 16 deposition, but will end up reacting with the Copper, Indium, Gallium, and Selenium fluxes during the CIGS thin film 14 growth, and is accounted for in the final CIGS thin film 14 composition.
  • an insulation layer 20 of SiO x and/or Al 2 O 3 can be deposited on the Aluminum substrate 12 followed by the Molybdenum back metal contact layer 16.
  • the insulation layer 20 serves as an additional protection for the Aluminum substrate 12 with the
  • the thin-film solar cell 10 of the present invention can be constructed in at least the following two variations:
  • the Al 2 O 3 insulation layer 20 can be deposited on the Aluminum substrate 12 by any of a variety of common techniques including, but not limited to, evaporation, sputtering electrodeposition, chemical vapor deposition, etc.
  • the Al 2 O 3 insulation layer 20 can be constructed by anodizing the Aluminum substrate 12. The anodization essentially converts the surfaces of the Aluminum substrate 12 to Al 2 O 3 by electrolytic means. It should be noted that in this embodiment, the adhesion layer between the Aluminum substrate 12 and alumina, as described above, is not necessary.
  • the CIGS can be paired with a II- VI film 22 to form a photoactive heterojunction.
  • the II- VI film 22 is constructed from Cadmium Sulfide (CdS) although constructing the ⁇ -VI films 22 from other materials including, but not limited to, Cadmium Zinc Sulfide (CdZnS), Zinc Selenide (ZnSe), etc., are within the scope of the present invention.
  • a transparent conducting oxide (TCO) layer 23 for collection of current is applied to the ⁇ -VI film.
  • the transparent conducting oxide layer 23 is constructed from Zinc Oxide (ZnO) although constructing the transparent conducting oxide layer 23 from other materials is within the scope of the present invention.
  • a suitable grid contact 24 or other suitable collector is deposited on the upper surface of the TCO layer 23 when forming a stand-alone thin-film solar cell 10.
  • the grid contact 24 can be formed from various materials but should have high electrical conductivity and form a good ohmic contact with the underlying TCO 23.
  • the grid contact 24 is constructed from a metal material, although constructing the grid contact 24 from other materials including, but not limited to, aluminum, indium, chromium, or molybdenum, with an additional conductive metal overlayment, such as copper, silver, nickel, etc., is within the scope of the present invention.
  • one or more anti-reflective coatings can be applied to the grid contact 24 to improve the thin-film solar cell's 10 collection of incident light.
  • any suitable anti-reflective coating is within the scope of the present invention.
  • the thin-film solar cell 10 is singular in nature and has variable size, ranging from approximately 1-cm 2 to approximately 100-cm 2 or even larger. In order to series connect singular thin-film solar cells 10, the thin-film solar cells 10 must be separated by cutting or slitting the flexible metallic substrate 12 and then reconnecting the grid contact 24 of one thin- film solar cell 10 to the flexible metallic substrate 12 of another thin-film solar cell 10. In the monolithic integration, the monolithic integrated scheme can be followed to connect the thin- film solar cells 10.
  • the thin-film solar cell 10 of the present invention provides a great advantage over conventional solar cells.
  • the thin-film solar cell 10 with the flexible metallic substrate 12, as described herein, is lighter, less space consuming, and less expensive than using glass or other metallic substrates. Lightness and size are especially useful in space applications where these criteria are important factors. Furthermore, the thin-film solar cell 10 of the present invention can be rolled and/or folded, depending on the desires of the user.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire en couche mince (10). Cette cellule solaire (10) comprend un substrat métallique souple (12) possédant des première et seconde surfaces. Une couche de contact métallique de fond (16) est déposée sur la première surface du substrat métallique souple (12). Une couche semi-conductrice d'absorbeur (14) est déposée sur le contact métallique de fond. Un film photo-actif, déposé sur la couche semi-conductrice d'absorbeur (14) forme une structure d'hétérojonction et un contact de grille (24) déposé sur la structure d'hétérojonction. Le substrat métallique flexible (12) peut être constitué d'aluminium ou d'acier inoxydable. L'invention concerne aussi un procédé de construction d'une cellule solaire. Ce procédé consiste à mettre en oeuvre un substrat d'aluminium (12), à déposer une couche semi-conductrice d'absorbeur (14) sur le substrat en aluminium (12), et à isoler le substrat en aluminium (12) de la couche semi-conductrice d'absorbeur (14) afin d'inhiber la réaction entre le substrat d'aluminium (12) et la couche semi-conductrice d'absorbeur (14).
PCT/US2001/022192 2001-07-13 2001-07-13 Cellule solaire en couche mince fabriquee sur un substrat metallique souple WO2003007386A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/US2001/022192 WO2003007386A1 (fr) 2001-07-13 2001-07-13 Cellule solaire en couche mince fabriquee sur un substrat metallique souple
US10/480,880 US7053294B2 (en) 2001-07-13 2001-07-13 Thin-film solar cell fabricated on a flexible metallic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/022192 WO2003007386A1 (fr) 2001-07-13 2001-07-13 Cellule solaire en couche mince fabriquee sur un substrat metallique souple

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Cited By (27)

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WO2005054538A1 (fr) * 2003-12-05 2005-06-16 Sandvik Intellectual Property Ab Bande d'acier revetue de zircone
WO2005088731A1 (fr) * 2004-03-11 2005-09-22 Solibro Ab Cellule solaire a couche mince et son procede de fabrication
WO2006033858A1 (fr) 2004-09-18 2006-03-30 Nanosolar, Inc. Formations de piles solaires sur des substrats en forme de feuille
US7276724B2 (en) 2005-01-20 2007-10-02 Nanosolar, Inc. Series interconnected optoelectronic device module assembly
WO2009041659A1 (fr) * 2007-09-28 2009-04-02 Fujifilm Corporation Cellule solaire
WO2009041660A1 (fr) * 2007-09-28 2009-04-02 Fujifilm Corporation Substrat pour cellule solaire et cellule solaire
WO2009041657A1 (fr) * 2007-09-28 2009-04-02 Fujifilm Corporation Substrat pour cellule solaire et cellule solaire
WO2009041658A1 (fr) * 2007-09-28 2009-04-02 Fujifilm Corporation Substrat pour cellule solaire et cellule solaire
WO2010032802A1 (fr) * 2008-09-18 2010-03-25 富士フイルム株式会社 Cellule solaire
WO2010032803A1 (fr) * 2008-09-18 2010-03-25 富士フイルム株式会社 Substrat de cellule solaire et cellule solaire associee
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
JP2010165878A (ja) * 2009-01-16 2010-07-29 Fujifilm Corp 光電変換素子、及びこれを用いた太陽電池
JP2010212337A (ja) * 2009-03-09 2010-09-24 Fujifilm Corp 光電変換素子、及び太陽電池
JP2010232454A (ja) * 2009-03-27 2010-10-14 Fujifilm Corp 基板とその位置決め方法、光電変換素子とその製造方法及び製造装置、及び太陽電池
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
EP2348540A2 (fr) * 2004-09-18 2011-07-27 Nanosolar Inc. Formation de cellules solaires sur des substrats en forme de feuille
US7989077B2 (en) 2003-08-12 2011-08-02 Sandvik Intellectual Property Ab Metal strip product
US8168089B2 (en) 2004-02-19 2012-05-01 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US8247243B2 (en) 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
US8309163B2 (en) 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US8372734B2 (en) 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US8541048B1 (en) 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
US8575476B2 (en) 2007-07-13 2013-11-05 Omron Corporation CIS solar cell and method for manufacturing the same
US8623448B2 (en) 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells

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