JP2010232454A - 基板とその位置決め方法、光電変換素子とその製造方法及び製造装置、及び太陽電池 - Google Patents
基板とその位置決め方法、光電変換素子とその製造方法及び製造装置、及び太陽電池 Download PDFInfo
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- 239000001023 inorganic pigment Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- PXZQEOJJUGGUIB-UHFFFAOYSA-N isoindolin-1-one Chemical compound C1=CC=C2C(=O)NCC2=C1 PXZQEOJJUGGUIB-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
- 239000001053 orange pigment Substances 0.000 description 1
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- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 description 1
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- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
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- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 239000012321 sodium triacetoxyborohydride Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- 229910052714 tellurium Inorganic materials 0.000 description 1
- JOUDBUYBGJYFFP-FOCLMDBBSA-N thioindigo Chemical compound S\1C2=CC=CC=C2C(=O)C/1=C1/C(=O)C2=CC=CC=C2S1 JOUDBUYBGJYFFP-FOCLMDBBSA-N 0.000 description 1
- 150000007944 thiolates Chemical class 0.000 description 1
- OKYDCMQQLGECPI-UHFFFAOYSA-N thiopyrylium Chemical class C1=CC=[S+]C=C1 OKYDCMQQLGECPI-UHFFFAOYSA-N 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000001052 yellow pigment Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
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Abstract
【解決手段】本発明の基板は、特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有する。特定波長域の光が、近赤外線、赤外線、近紫外線、又は紫外線であることが好ましい。位置決め用のマーカが基板の裏面に形成されていることが好ましい。
【選択図】なし
Description
従来、太陽電池においては、バルクの単結晶Si又は多結晶Si、あるいは薄膜のアモルファスSiを用いたSi系太陽電池が主流であったが、Siに依存しない化合物半導体系太陽電池の研究開発がなされている。化合物半導体系太陽電池としては、GaAs系等のバルク系と、Ib族元素とIIIb族元素とVIb族元素とからなるCIS(Cu−In−Se)系あるいはCIGS(Cu−In−Ga−Se)系等の薄膜系とが知られている。CIS系あるいはCIGS系は、光吸収率が高く、高エネルギー変換効率が報告されている。
本発明はまた、基板に対して最終的に使用されない耳端部を設ける必要なく、基板に位置決め用のマーカを形成することができる基板とその位置決め方法を提供することを目的とするものである。
本発明はまた、上記基板を用いた光電変換素子とその製造方法及び製造装置を提供することを目的とするものである。
基板上に下部電極と光吸収により電流を発生する光電変換半導体層と上部電極との積層構造を有し、かつ該積層構造が複数の開溝部によって複数のセルに分割された光電変換素子において、
前記基板は、特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有することを特徴とするものである。
特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有する基板を用い、
前記位置決め用のマーカに対して前記特定波長域内の検出光を照射し、前記位置決め用のマーカからの反射光を検出することで、前記基板の位置決めを行うことを特徴とするものである。
基板上に下部電極と光吸収により電流を発生する光電変換半導体層と上部電極との積層構造を有し、かつ該積層構造が複数の開溝部によって複数のセルに分割された光電変換素子の製造方法において、
前記基板として、特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有する基板を用い、
前記位置決め用のマーカに対して前記特定波長域内の検出光を照射し、前記位置決め用のマーカからの反射光を検出することで、前記基板の位置決めを行う工程を有することを特徴とするものである。
前記基板の位置決めを行う工程を実施した後に、得られた前記基板の位置データに基づいて、前記複数の開溝部を形成する工程を有することが好ましい。
前記位置決め用のマーカに対して前記特定波長域内の検出光を照射する光照射手段と、
前記位置決め用のマーカからの反射光を検出する検出手段とを備えたことを特徴とするものである。
本発明の光電変換素子の製造装置はさらに、前記複数の開溝部を形成するスクライブ加工手段を備えたことが好ましい。
本発明によれば、基板に対して最終的に使用されない耳端部を設ける必要なく、基板に位置決め用のマーカを形成することができる基板とその位置決め方法を提供することができる。
本発明によれば、上記基板を用いた光電変換素子とその製造方法及び製造装置を提供することができる。
本発明の基板は、特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有することを特徴とするものである。
光吸収剤による光吸収率、光反射剤による光反射率は特に制限なく、位置検出が可能なレベルであればよい。
近赤外線又は赤外線を吸収する染料としては、市販の染料及び例えば「染料便覧」(有機合成化学協会編集、昭和45年刊)等の文献に記載されている公知のものが利用できる。具体的には、アゾ染料、金属錯塩アゾ染料、ピラゾロンアゾ染料、ナフトキノン染料、アントラキノン染料、フタロシアニン染料、カルボニウム染料、キノンイミン染料、メチン染料、シアニン染料、スクワリリウム色素、ピリリウム塩、金属チオレート錯体等の染料が挙げられる。
さらに、アデカスタブLA−31(商品名:旭電化社製)等のように、紫外線吸収骨格がメチレン等を介して2量化した分子量の大きい化合物もまた好ましく用いられる。
本明細書において、基板上に形成される電極、光電変換半導体層、及び必要に応じて設けられる他の任意の層の「主成分」は、含量90質量%以上の成分であると定義する。
特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有する基板を用い、
前記位置決め用のマーカに対して前記特定波長域内の検出光を照射し、前記位置決め用のマーカからの反射光を検出することで、前記基板の位置決めを行うことを特徴とするものである。
図面を参照して、本発明に係る一実施形態の光電変換素子の構造について説明する。図1Aは光電変換素子の短手方向の模式断面図、図1Bは光電変換素子の長手方向の模式断面図、図2は陽極酸化基板の構成を示す模式断面図、図3は陽極酸化基板の製造方法を示す斜視図、図4は基板の裏面を示す平面図である。視認しやすくするため、図中、各構成要素の縮尺等は実際のものとは適宜異ならせてある。
本実施形態において、陽極酸化基板10はAlを主成分とする金属基材11の少なくとも一方の面側を陽極酸化して得られた基板である。陽極酸化基板10は、図2の左図に示すように、金属基材11の両面側に陽極酸化膜12が形成されたものでもよいし、図2の右図に示すように、金属基材11の片面側に陽極酸化膜12が形成されたものでもよい。陽極酸化膜12はAl2O3を主成分とする膜である。
光電変換層30は光吸収により電流を発生する層である。その主成分は特に制限されず、少なくとも1種のカルコパイライト構造の化合物半導体であることが好ましい。光電変換層30の主成分は、Ib族元素とIIIb族元素とVIb族元素とからなる少なくとも1種の化合物半導体であることが好ましい。
光電変換層30の主成分は、
Cu及びAgからなる群より選択された少なくとも1種のIb族元素と、
Al,Ga及びInからなる群より選択された少なくとも1種のIIIb族元素と、
S,Se,及びTeからなる群から選択された少なくとも1種のVIb族元素とからなる少なくとも1種の化合物半導体であることが好ましい。
CuAlS2,CuGaS2,CuInS2,
CuAlSe2,CuGaSe2,CuInSe2(CIS),
AgAlS2,AgGaS2,AgInS2,
AgAlSe2,AgGaSe2,AgInSe2,
AgAlTe2,AgGaTe2,AgInTe2,
Cu(In1−xGax)Se2(CIGS),Cu(In1−xAlx)Se2,Cu(In1−xGax)(S,Se)2,
Ag(In1−xGax)Se2,及びAg(In1−xGax)(S,Se)2等が挙げられる。
3段階法(J.R.Tuttle et.al,Mat.Res.Soc.Symp.Proc.,Vol.426(1996)p.143.等)と、
ECグループの同時蒸着法(L.Stolt et al.:Proc.13th ECPVSEC(1995,Nice)1451.等)とが知られている。
前者の3段階法は、高真空中で最初にIn、Ga、及びSeを基板温度300℃で同時蒸着し、次に500〜560℃に昇温してCu及びSeを同時蒸着後、In、Ga、及びSeをさらに同時蒸着する方法である。後者のECグループの同時蒸着法は、蒸着初期にCu過剰CIGS、後半でIn過剰CIGSを蒸着する方法である。
a)イオン化したGaを使用する方法(H.Miyazaki, et.al, phys.stat.sol.(a),Vol.203(2006)p.2603.等)、
b)クラッキングしたSeを使用する方法(第68回応用物理学会学術講演会 講演予稿集(2007秋 北海道工業大学)7P−L−6等)、
c)ラジカル化したSeを用いる方法(第54回応用物理学会学術講演会 講演予稿集(2007春 青山学院大学)29P−ZW−10等)、
d)光励起プロセスを利用した方法(第54回応用物理学会学術講演会 講演予稿集(2007春 青山学院大学)29P−ZW−14等)等が知られている。
CuInSe2多結晶をターゲットとした方法、
Cu2SeとIn2Se3をターゲットとし、スパッタガスにH2Se/Ar混合ガスを用いる2源スパッタ法(J.H.Ermer,et.al, Proc.18th IEEE Photovoltaic Specialists Conf.(1985)1655-1658.等)、
Cuターゲットと、Inターゲットと、SeまたはCuSeターゲットとをArガス中でスパッタする3源スパッタ法(T.Nakada,et.al, Jpn.J.Appl.Phys.32(1993)L1169-L1172.等)が知られている。
下部電極20及び上部電極50はいずれも導電性材料からなる。光入射側の上部電極50は透光性を有する必要がある。
下部電極20の主成分としては特に制限されず、Mo,Cr,W,及びこれらの組合わせが好ましく、Moが特に好ましい。下部電極20の厚みは特に制限されず、0.3〜1μmが好ましい。
上部電極50の主成分としては特に制限されず、ZnO,ITO(インジウム錫酸化物),SnO2,及びこれらの組合わせが好ましい。上部電極50の厚みは特に制限されず、0.6〜1.0μmが好ましい。
下部電極20及び/又は上部電極50は、単層構造でもよいし、2層構造等の積層構造もよい。
下部電極20及び上部電極50の成膜方法は特に制限されず、電子ビーム蒸着法やスパッタリング法等の気相成膜法が挙げられる。
好ましい組成の組合わせとしては例えば、Mo下部電極/CdSバッファ層/CIGS光電変換層/ZnO上部電極が挙げられる。
光電変換素子1は必要に応じて、上記で説明した以外の任意の構成を備えることができる。
本実施形態の光電変換素子1は陽極酸化基板10を用いた素子であるので、軽量かつフレキシブルであり、連続工程(Roll to Roll工程)による製造が可能であり、低コストで製造可能な素子である。
図面を参照して、本発明に係る一実施形態の製造装置(スクライブ加工装置)の構造について説明する。図6は装置の概略斜視図である。
10 陽極酸化基板
11 金属基材
12 陽極酸化膜
13 位置決め用のマーカ
20 下部電極
30 光電変換半導体層
40 バッファ層
50 上部電極
61〜64 開溝部
100 製造装置(スクライブ加工装置)
130 スクライブ加工手段
150 位置検出手段
151 光照射手段
152 検出手段
L1 検出光
L2 反射光
B 可撓性基板
H 開溝部
Claims (13)
- 特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有することを特徴とする基板。
- 前記特定波長域の光が、近赤外線、赤外線、近紫外線、又は紫外線であることを特徴とする請求項1に記載の基板。
- Alを主成分とする金属基材の少なくとも一方の面側に陽極酸化膜を有する陽極酸化基板であることを特徴とする請求項1又は2に記載の基板。
- 下部電極と光吸収により電流を発生する光電変換半導体層と上部電極との積層構造を有する光電変換素子用の基板であることを特徴とする請求項1〜3のいずれかに記載の基板。
- 基板上に下部電極と光吸収により電流を発生する光電変換半導体層と上部電極との積層構造を有し、かつ該積層構造が複数の開溝部によって複数のセルに分割された光電変換素子において、
前記基板は、特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有することを特徴とする光電変換素子。 - 前記特定波長域の光が、近赤外線、赤外線、近紫外線、又は紫外線であることを特徴とする請求項5に記載の光電変換素子。
- 前記位置決め用のマーカが前記基板の裏面に形成されていることを特徴とする請求項5又は6に記載の光電変換素子。
- 請求項5〜7のいずれかに記載の光電変換素子を備えたことを特徴とする太陽電池。
- 特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有する基板を用い、
前記位置決め用のマーカに対して前記特定波長域内の検出光を照射し、前記位置決め用のマーカからの反射光を検出することで、前記基板の位置決めを行うことを特徴とする基板の位置決め方法。 - 基板上に下部電極と光吸収により電流を発生する光電変換半導体層と上部電極との積層構造を有し、かつ該積層構造が複数の開溝部によって複数のセルに分割された光電変換素子の製造方法において、
前記基板として、特定波長域の光を選択的に吸収する光吸収剤、又は特定波長域の光を選択的に反射する光反射剤を用いて形成された位置決め用のマーカを有する基板を用い、
前記位置決め用のマーカに対して前記特定波長域内の検出光を照射し、前記位置決め用のマーカからの反射光を検出することで、前記基板の位置決めを行う工程を有することを特徴とする光電変換素子の製造方法。 - 前記基板の位置決めを行う工程を実施した後に、得られた前記基板の位置データに基づいて、前記複数の開溝部を形成する工程を有することを特徴とする請求項10に記載の光電変換素子の製造方法。
- 請求項5〜7のいずれかに記載の光電変換素子を製造する製造装置であって、
前記位置決め用のマーカに対して前記特定波長域内の検出光を照射する光照射手段と、
前記位置決め用のマーカからの反射光を検出する検出手段とを備えたことを特徴とする光電変換素子の製造装置。 - さらに、前記複数の開溝部を形成するスクライブ加工手段を備えたことを特徴とする請求項12に記載の光電変換素子の製造装置。
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