WO2002099883A2 - Electronic device and relative fabrication method - Google Patents
Electronic device and relative fabrication method Download PDFInfo
- Publication number
- WO2002099883A2 WO2002099883A2 PCT/IT2002/000367 IT0200367W WO02099883A2 WO 2002099883 A2 WO2002099883 A2 WO 2002099883A2 IT 0200367 W IT0200367 W IT 0200367W WO 02099883 A2 WO02099883 A2 WO 02099883A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic device
- heat
- absorbent material
- dimensional
- electronic circuit
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 23
- 230000002745 absorbent Effects 0.000 claims abstract description 19
- 239000002250 absorbent Substances 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 8
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229920000742 Cotton Polymers 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims 2
- 239000011491 glass wool Substances 0.000 claims 1
- 239000011490 mineral wool Substances 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 235000013311 vegetables Nutrition 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06589—Thermal management, e.g. cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06593—Mounting aids permanently on device; arrangements for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
There is described a three-dimensional electronic device (9) having a number of integrated electronic circuits (1) stacked and forming respective gaps in which are deposited an absorbent material (10) and a liquid impregnating the absorbent material (10). The integrated electronic circuits (1) are enclosed in a hermetic package (7); and, during operation of the electronic device (9), the heat produced by the integrated electronic circuits (1) causes the liquid to evaporate, the vapor comes into contact with, and transfers heat to, the walls of the package (7), and, on cooling, condenses once more to the liquid state, which, by virtue of the capillarity of the absorvent material (10), is brought once more into contact with the integrated electronic circuits (1).
Description
ELECTRONIC DEVICE AND RELATIVE FABRICATION METHOD
TECHNICAL FIELD The present invention relates to an electronic device and relative fabrication method, and in particular to a three-dimensional electronic device comprising integrated circuits .
BACKGROUND ART As is known, a three-dimensional electronic device is defined by a number of electronic circuits stacked and housed in a package made of plastic material, typically epoxy resin, and from which connecting pins project.
Recent developments in electronics have led to the production of increasingly small three-dimensional electronic circuits, in particular integrated circuits. Circuit miniaturization, however, is limited by the need to dissipate the heat produced during operation of the electronic circuits. More specifically, in the case of conventional three-dimensional electronic circuits, the heat produced by each circuit is dissipated by straightforward heat exchange between the circuit and the surrounding air.
Such a simple structure, however, fails to provide for optimum dissipation, and often results in failure of the circuits .
The above limitation currently prevents widespread use of three-dimensional electronics and adequate exploitation of all the advantages it affords. DISCLOSURE OF THE INVENTION
It is an object of the present invention to provide an electronic device and relative fabrication method, designed to at least partly eliminate the aforementioned drawbacks, and which, in particular, provide for rapid dissipation of the heat produced by electronic circuits, and therefore greater circuit miniaturization.
According to the present invention, there is provided an electronic device as claimed in Claim 1.
According to the present invention, there is also provided a method of fabricating an electronic device, as claimed in Claim 11.
BRIEF DESCRIPTION OF THE DRAWING A preferred, non-limiting embodiment of the invention will be described, purely by way of example, with reference to the accompanying drawing showing the steps in a method of fabricating a three-dimensional electronic device. BEST MODE FOR CARRYING OUT THE INVENTION
As shown in the accompanying drawing, the fabrication method comprises a step of stacking a number of integrated electronic circuits 1 - only three of which
are shown for the sake of simplicity.
More specifically, each integrated electronic circuit 1 comprises a so-called die 2 glued or soldered to a flexible support 3 having a structure similar to that of a printed circuit board, and on which are formed leads 4 connected electrically at one end to respective test pads 5 equally spaced along a peripheral portion of flexible support 3, and, at the other end, to respective regions of die 2 by means of connecting wires . The stacking step is followed by a step of depositing an absorbent material 10 between each integrated electronic circuit 1 and the next.
More specifically, absorbent material 10 is deposited in the gaps between integrated electronic circuits 1, which may, for example, be located 0.2 mm apart, and each be, for example, roughly 1 cm2 in size.
Absorbent material 10 is then soaked with a two- phase mixture of a thermally stable insulating liquid, which impregnates and spreads by capillarity inside absorbent material 10.
More specifically, absorbent material 10 may be a fibrous-structure material capable of forming capillary vessels, such as cotton or cloth or powder.
The thermally stable insulating liquid used is a nonionic liquid, preferably an organic solvent, such as a hydrocarbon or a mixture of appropriately selected hydrocarbons, preferably with a boiling point of 50°C to
100°C.
With reference to the accompanying drawing, the step of depositing the absorbent material is followed by a molding step, in which a substantially parallelepiped- shaped package 7 made of epoxy resin and enclosing integrated electronic circuits 1 is formed.
Package 7 is then sawed to expose leads 4.
A plating step is then performed, in which the lateral walls of package 7 are plated with conducting material, e.g. a nickel and gold alloy. The plating step is followed by a connecting step, in which a laser beam defines conducting tracks 8 electrically connecting leads 4 as required, so as to obtain the three-dimensional electronic device indicated as a whole by 9. In actual use, when integrated electronic circuits 1 heat up, the liquid serves as a means of transferring heat. That is, the liquid permeates absorbent material 10 contacting integrated circuits 1, is converted to vapor, and then comes into contact with, and transfers heat to, the walls of package 7, which serve as heat-dissipating means .
The vapor then cools and returns to the liquid state.
The liquid is then reabsorbed by absorbent material 10 and, exploiting the capillarity of the absorbent material, is again brought into contact with integrated circuits 1.
This therefore substantially exploits the principle
that two-phase mixtures are isothermal, and the materials are therefore selected according to the size of three- dimensional electronic device 9 and, hence, the amount of heat to be dissipated. The heat produced by the electronic circuits of three-dimensional electronic devices can therefore be dissipated rapidly and effectively by appropriately combining a nonpolar solvent absorbed by an absorbent material as described above. Three-dimensional electronic device 9 has the following advantages :
Firstly, by improving heat dispersion, the method of fabricating three-dimensional electronic device 9 provides for further miniaturization of the electronic circuits of three-dimensional electronic device 9.
Secondly, improving dissipation of the heat produced by the circuits also reduces the failure rate, and provides for optimum operating conditions , of conventional three-dimensional electronic devices. Clearly, changes may be made to the three- dimensional electronic device as described herein without, however, departing from the scope of the present invention.
In particular, as opposed to being defined by the walls of package 7, the heat-dissipating means may be external to package 7.
Moreover, the present invention may be used for dissipating heat in any type of electronic device, even
other than three-dimensional, or comprising even only one electronic circuit.
Claims
1) A three-dimensional electronic device (9) comprising at least one electronic circuit (1) ; heat- dissipating means (7) for dissipating the heat produced by said electronic circuit (1) ; and heat-transferring means (10) for transferring heat from the electronic circuit (1) to said heat-dissipating means (7); characterized in that said heat-transferring means (10) comprise an absorbent material (10) ; and a two-phase mixture defined by a liquid in the presence of its own vapor.
2) A three-dimensional electronic device as claimed in Claim 1, characterized in that said absorbent material (10) comprises fibers.
3) A three-dimensional electronic device as claimed in Claim 2, characterized in that said absorbent material (10) is of vegetable fibers.
4) A three-dimensional electronic device as claimed in Claim 2, characterized in that said absorbent material
(10) is cotton.
5) A three-dimensional electronic device as claimed in Claim 1, characterized in that said absorbent material (10) is rock wool or glass wool. 6) A three-dimensional electronic device as claimed in Claim 5, characterized in that said two-phase mixture is a hydrocarbon or a mixture of hydrocarbons .
7) A three-dimensional electronic device as claimed
in Claim 6, characterized in that said hydrocarbon or said mixture of hydrocarbons boils at a temperature of 50°C to 100°C.
8) A three-dimensional electronic device as claimed in any one of the foregoing Claims, characterized in that said package (7) is hermetic.
9) A three-dimensional electronic device as claimed in any one of the foregoing Claims, characterized in that said electronic circuit (1) is an integrated circuit. 10) A three-dimensional electronic device as claimed in any one of the foregoing Claims, characterized by comprising a second electronic circuit (1) ; and in that said first and said second electronic circuit (1) are stacked, spaced apart, inside a package (7) . 11) A method of fabricating an electronic device comprising at least a first electronic circuit (1) ; said method comprising a step of depositing heat-transferring means for transferring heat to heat-dissipating means; and being characterized in that said heat-transferring means comprise a two-phase mixture.
12) A method of fabricating an electronic device (9) as claimed in Claim 11, said device comprising at least a second electronic circuit (1) stacked with and spaced apart from said first electronic circuit (1) inside a package (7) ; said method being characterized by comprising a step of stacking said first and said second electronic circuit (1) ; and in that said step of depositing heat-transferring means comprises a step of
depositing an absorbent material (10) during said step of stacking said first and said second electronic circuit (1) , and is followed by a step of soaking said absorbent material (10) .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02741171A EP1412983A2 (en) | 2001-06-05 | 2002-06-05 | Electronic device and relative fabrication method |
| AU2002314532A AU2002314532A1 (en) | 2001-06-05 | 2002-06-05 | Electronic device and relative fabrication method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2001TO000540A ITTO20010540A1 (en) | 2001-06-05 | 2001-06-05 | ELECTRONIC DEVICE AND RELATED MANUFACTURING PROCESS. |
| ITTO2001A000540 | 2001-06-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002099883A2 true WO2002099883A2 (en) | 2002-12-12 |
| WO2002099883A3 WO2002099883A3 (en) | 2004-03-04 |
Family
ID=11458933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IT2002/000367 WO2002099883A2 (en) | 2001-06-05 | 2002-06-05 | Electronic device and relative fabrication method |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1412983A2 (en) |
| AU (1) | AU2002314532A1 (en) |
| IT (1) | ITTO20010540A1 (en) |
| WO (1) | WO2002099883A2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673306A (en) * | 1970-11-02 | 1972-06-27 | Trw Inc | Fluid heat transfer method and apparatus for semi-conducting devices |
| US5270571A (en) * | 1991-10-30 | 1993-12-14 | Amdahl Corporation | Three-dimensional package for semiconductor devices |
| US5349237A (en) * | 1992-03-20 | 1994-09-20 | Vlsi Technology, Inc. | Integrated circuit package including a heat pipe |
| US20010004934A1 (en) * | 1999-12-24 | 2001-06-28 | Masaaki Yamamoto | Compressed mesh wick, method for manufacturing same, and plate type heat pipe including compressed mesh wick |
-
2001
- 2001-06-05 IT IT2001TO000540A patent/ITTO20010540A1/en unknown
-
2002
- 2002-06-05 EP EP02741171A patent/EP1412983A2/en not_active Withdrawn
- 2002-06-05 WO PCT/IT2002/000367 patent/WO2002099883A2/en not_active Application Discontinuation
- 2002-06-05 AU AU2002314532A patent/AU2002314532A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673306A (en) * | 1970-11-02 | 1972-06-27 | Trw Inc | Fluid heat transfer method and apparatus for semi-conducting devices |
| US5270571A (en) * | 1991-10-30 | 1993-12-14 | Amdahl Corporation | Three-dimensional package for semiconductor devices |
| US5349237A (en) * | 1992-03-20 | 1994-09-20 | Vlsi Technology, Inc. | Integrated circuit package including a heat pipe |
| US20010004934A1 (en) * | 1999-12-24 | 2001-06-28 | Masaaki Yamamoto | Compressed mesh wick, method for manufacturing same, and plate type heat pipe including compressed mesh wick |
Also Published As
| Publication number | Publication date |
|---|---|
| ITTO20010540A0 (en) | 2001-06-05 |
| AU2002314532A1 (en) | 2002-12-16 |
| EP1412983A2 (en) | 2004-04-28 |
| ITTO20010540A1 (en) | 2002-12-05 |
| WO2002099883A3 (en) | 2004-03-04 |
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