WO2002092885A1 - Ensemble mandrin electroconducteur pour cristal germe - Google Patents

Ensemble mandrin electroconducteur pour cristal germe Download PDF

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Publication number
WO2002092885A1
WO2002092885A1 PCT/US2001/015622 US0115622W WO02092885A1 WO 2002092885 A1 WO2002092885 A1 WO 2002092885A1 US 0115622 W US0115622 W US 0115622W WO 02092885 A1 WO02092885 A1 WO 02092885A1
Authority
WO
WIPO (PCT)
Prior art keywords
chuck
seed crystal
chuck assembly
elongate member
set forth
Prior art date
Application number
PCT/US2001/015622
Other languages
English (en)
Inventor
Carl F. Cherko
Original Assignee
Memc Electronic Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials, Inc. filed Critical Memc Electronic Materials, Inc.
Priority to PCT/US2001/015622 priority Critical patent/WO2002092885A1/fr
Publication of WO2002092885A1 publication Critical patent/WO2002092885A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Definitions

  • This invention relates generally to the production of semiconductor ingots, and in particular to a seed chuck assembly which is electrically conductive for detecting contact between a seed crystal and a molten semiconductor source material.
  • Most semiconductor chips used in electronic devices are fabricated from single crystal silicon prepared by the Czochralski method.
  • a quantity of molten source material is formed by melting polycrystalline silicon in a quartz crucible in a low pressure, inert gas environment.
  • a seed crystal is lowered into the crucible to a point where its bottom tip touches the surface of molten source material.
  • source material crystallizes on the seed crystal and grows into an ingot, it is slowly pulled upwardly from the melt.
  • the seed crystal is held in a chuck which is suspended from an end of a cable or a rod above the melt.
  • the cable is typically wrapped around a drum which is rotated to lower the seed crystal or to slowly pull the ingot upwardly from the melt as it grows.
  • the seed crystal should be lowered until its bottom tip just touches the surface of the melt. That point establishes a position reference where the source material begins crystallizing and forming a neck to support the ingot. If lowered too far, the seed crystal is partially submerged and begins to melt, leading to subsequent inaccuracies in neck length and potential degradations in crystal quality.
  • an operator determines the position of the seed crystal relative to the surface of the melt by a visual method through a window, using either a camera or manual observation. Unfortunately, these methods are prone to inaccuracy because visibility inside the crucible is often poor.
  • the window is positioned above the crucible at a vantage point which fails to provide direct line-of-sight to the bottom tip of the seed crystal.
  • a method providing better accuracy in determining when the tip of the seed crystal first contacts the melt is to detect electrical continuity. Specifically, an electrical voltage is applied across the melt and cable. When the seed crystal touches the melt, it completes an electrical circuit passing through the chuck assembly which initiates flow of an electrical current. Detection of a current establishes the position of the seed crystal and chuck relative to the melt surface. The motion of the chuck is stopped so that the neck of the ingot begins forming on the tip of the seed crystal.
  • the method is readily adaptable for automated processes in crystal growing because machine operation may be pre- programmed and it does not require manual intervention.
  • a drawback to the electrical method is that some chucks are not conductive and thereby prevent flow of electrical current.
  • Some chucks are formed in two parts, including an upper part which attaches to the cable and a lower part which holds the seed crystal. Both parts must be made of materials which can withstand the high temperature environment and which avoid releasing contaminative particles into the melt.
  • the lower part is made of graphite and the upper part is made from a material suitable for thermally insulating the lower end of the cable, such as quartz.
  • graphite is an effective electrical conductor
  • quartz has high electrical resistance which effectively blocks electrical continuity between the cable and the seed crystal unless undesirably high voltages are used.
  • the chuck is therefore practically unable to complete an electrical circuit or serve as a tool for detecting when the seed crystal initially contacts the melt.
  • a chuck assembly for electronically detecting contact between a semiconductor seed crystal and a molten source material; the provision of such an assembly providing electrical continuity between the seed crystal and a supporting cable; the provision of such an assembly which maintains electrical continuity for a range of dimensional variations within the chuck assembly arising from both manufacturing tolerances and thermal expansion; and the provision of such an assembly which may be formed from existing chucks without substantial modification.
  • a chuck assembly holds a seed crystal and suspends the seed crystal from an elongate member in a growth chamber as an ingot is grown on the seed crystal from a semiconductor source material according to the Czochralski process.
  • the assembly provides electrical continuity between the seed crystal and the elongate member to enable flow of electrical current therethrough for sensing contact between the seed crystal and the source material.
  • the chuck assembly comprises an upper chuck body constructed for attachment to an end of the elongate member, the upper body having an electrically conductive portion in electrical continuity with the elongate member when the upper body is attached to the elongate member.
  • a lower chuck body is constructed for holding the seed crystal, the lower body having an electrically conductive portion in electrical continuity with the seed crystal when the lower body is holding the seed crystal.
  • the upper body and lower body are constructed for connection in an attached configuration to suspend the seed crystal from the elongate member.
  • An electrically conductive element extends between the conductive portions of the upper and lower chuck bodies at the attached configuration for providing electrical continuity between the seed crystal and the elongate member.
  • FIG. 1 is a schematic cross sectional view of a crystal puller including a chuck assembly of the present invention
  • FIG. 2 is an elevational view of the chuck assembly with an upper part broken away;
  • FIG. 3 is an exploded view of the chuck assembly
  • FIG. 4 is an enlarged, fragmentary section of the chuck assembly of Fig. 2
  • FIG. 5 is an enlarged sectional view of a helical spring of the chuck assembly.
  • the crystal puller 10 includes a growth chamber 12 and a crucible 14 for initially holding solid semiconductor source material, such as polycrystalline silicon, which is heated to a temperature above the melting point of the material to form a liquid melt 16.
  • solid semiconductor source material such as polycrystalline silicon
  • a seed chuck assembly is constructed for holding a seed crystal 22 and is suspended in the growth chamber 12 from an elongate member 24 suitable for supporting an ingot 26.
  • the elongate member 24 is preferably a flexible cable, as shown in Fig. 1 , although it can be a rigid rod or other support.
  • the cable 24 is attached to a puller apparatus which includes a winch (generally indicated at 28) for raising or lowering the chuck 20.
  • the winch 28 includes a drum 30 on which the cable is wound, a pulley 32, and a motor (not shown).
  • the winch 28 is located in a housing 34 above the growth chamber.
  • the chuck 20 is lowered until a bottom tip of the seed crystal 22 comes into contact with the molten semiconductor source material 16.
  • the chuck 20 is raised to lift the ingot.
  • the crucible 14 rests on a turntable used to rotate the crucible about a vertical axis.
  • the turntable can also raise the crucible within the growth chamber 12 to maintain the surface of the molten source material 16 at the same level relative to the growth chamber 12 as the ingot 26 is grown and source material is removed from the melt.
  • the chuck assembly 20 includes an upper chuck body 40 and a lower chuck body 42 which are joined together in an attached configuration and suspended from the cable 24.
  • the upper and lower chuck bodies 40, 42 are generally cylindrical with approximately equal diameters. It is understood that chucks with other shapes and relative dimensions do not depart from the scope of this invention.
  • the upper and lower chuck bodies 40, 42 are longitudinally aligned together in the attached configuration and commonly aligned in vertical orientation with the cable 24.
  • the seed crystal 22 is a monocrystalline silicon rod which is releasably retained in a bottom end of the lower chuck body 42 so that when production of the ingot 26 is complete, it can be easily separated from the chuck for further processing.
  • a retention device (not shown) for retaining the seed crystal 22 in the chuck is typically a latch pin which is interengaged with a corresponding notch formed in the seed crystal.
  • a socket 48 (Fig. 3) is formed in the upper chuck body 40 for receiving a corresponding post 50 formed on the lower chuck body 42.
  • the post 50 extends from the center of an upper side 52 of the lower chuck body 42.
  • the post 50 is preferably cylindrical in shape and sized with a length and diameter suitable for aligning and firmly joining the lower chuck body 42 with the upper chuck body 40.
  • the socket 48 is located generally in the center of a lower side
  • the post 50 is received in the socket 48, and the upper and lower chuck bodies 40, 42 are coaxial.
  • An annular ridge 56 extends around the perimeter of the upper side 52 of the lower chuck body 42. The ridge 56 comprises an engagement surface which engages the lower side 54 of the upper chuck body 40 in the attached configuration.
  • a connecting pin 60 secures the upper and lower chuck bodies 40, 42 together in the attached configuration.
  • a transverse passage 62 extends across the entire upper chuck body 40, passing through the socket 48.
  • the post 50 has a corresponding transverse passage 64 extending through the post.
  • the transverse passages 62, 64 of the upper and lower bodies are aligned and the connecting pin 60 inserted through the passages to secure the upper and lower chuck bodies together.
  • a passageway 66 located in the upper chuck body 40 and extending from the socket 48 to an opening 68 on the upper side, is suitable for receiving the cable 24.
  • the passageway 66 has a relatively wider lower portion toward the socket 48, a relatively narrower upper portion toward the opening 68, and a conical neck 76 where a diameter of the passageway transitions between the wider and narrower portions.
  • the upper chuck body 40 includes a cable coupling 78 receivable in the upper body.
  • the neck 76 is configured for receiving the cable coupling 78 for suspending the chuck assembly 20 from the cable 24.
  • the coupling 78 has conically shaped shoulders which are sized and shaped for engagement against the neck 76 to support the weight of the chuck 20 and ingot 26.
  • a spherical tip end 82 of the cable 24 is receivable in the coupling 78 such that the chuck may self-align and hang vertical on the end of the cable during the crystal pulling operation.
  • the upper and lower bodies 40, 42 are made of materials selected to withstand the high temperature environment and avoid release of particles that would contaminate the melt 16, potentially causing crystal dislocations during ingot growth.
  • the lower body 42 is preferably made of graphite for its high temperature integrity. Graphite is an effective electrical conductor, so that substantially the entire lower chuck body is conductive.
  • the cable 24 and cable coupling 78 are each made of a refractory metal, such as tungsten, which is electrically conductive. These metals are subject to creep failure or oxidation after repeated use at high temperature.
  • the upper body 40 is made of a suitable material which provides thermal protection, such as quartz, to insulate the cable 24 and the cable coupling 78.
  • quartz provides low thermal conductivity to protect the cable 24, it unfortunately also exhibits low electrical conductivity (high resistance). Therefore the cable coupling 78 is the only conductive portion of the upper chuck body 40.
  • the coupling 78 is in direct contact with the cable 24 to provide electrical continuity. It is understood that chuck bodies with different conductive portion(s) do not depart from the scope of this invention.
  • an electric potential source 86 (Fig. 1) is provided.
  • the potential source 86 is connected either directly or indirectly to the cable 24 and to the melt 16, creating an electric potential between the two.
  • An electric circuit is completed when the seed crystal 22 contacts the melt 16, producing current which is detected by the crystal puller 10 for use in operating the puller to grow the semiconductor ingot.
  • the quartz upper body 40 would block conduction of electrical current through the chuck 20 to the seed crystal 22.
  • the cable 24, coupling 78, lower body 42, seed crystal 22, and melt 16 are each formed of electrically conductive or semiconductive materials, the quartz upper body 40, if needed to complete the circuit, would block that conduction.
  • the chuck assembly 20 includes a conductive element, indicated generally at 90, extending between a conductive portion of the upper body 40 and a conductive portion of the lower body 42.
  • the conductive element 90 is a helical or coil type spring which extends from the cable coupling 78 to the post 50. Without the conductive element 90, the chuck 20 would not readily provide electrical continuity between the cable 24 and the seed crystal 22 because there would be no conductive path through the chuck assembly. In the attached configuration of the chuck 20, there is a space or gap between the top of the post 50 of the lower chuck body and the cable coupling 78.
  • the spring 90 spans that gap and is made from a conductive material so as to provide the chuck assembly with electrical continuity from the cable 24 to the seed crystal 22.
  • the spring 90 extends into the passageway 66. At its upper end the spring 90 engages the cable coupling 78, and at its lower end the spring engages the post 50 in a depression 92 typically formed in the end of the post. It is understood that any conductive element in any shape or form, including a flexible wire or rigid member, does not depart from the scope of this invention. Further, the conductive element may extend between any conductive portions or components of the chuck assembly 20 which provide electrical continuity.
  • the conductive element 90 is preferably a spring because it is resiliently compliant in an axial direction, and can vary in length between its ends while applying force at the ends to ensure effective electrical contact. Length variations of the spring 90 compensate for differing internal dimensions of the chuck due to accumulated manufacturing tolerances of the components and/or differing rates of thermal expansion.
  • the quartz upper body 40 has a lower coefficient of thermal expansion than the tungsten cable 24, the tungsten cable coupling 78 and the graphite lower body 42. As the assembly is heated and cooled, differential thermal expansion produces variation in spacing between the upper and lower bodies.
  • the spring 90 is resiliently compliant, providing continuous positive contact with the cable coupling 78 and the post 50 of the lower body 42 to bypass the quartz upper body 40 and maintain a low electrical resistance path.
  • the spring 90 has a symmetrical helix arrangement with about ten turns 94 about a central axis C.
  • the turns 94 have a trapezoid shaped cross section for purposes of manufacturing, as described below. It is understood that the spring 90 may have any number of turns or any cross sectional shape without departing from the scope of this invention.
  • the spring 90 is axially compressed in the attached configuration to provide the force required to ensure positive contact.
  • a chuck 20 sized for holding a twenty millimeter square seed crystal 22 has a spring 90 with a free, uncompressed height H (Fig. 5) of 46.0 mm and a minimum, compressed height of 36.8 mm where all of the turns 94 are in engagement with each other.
  • a nominal height, where the spring 90 is installed in the chuck at the attached configuration, is about halfway between, or 41.4 mm.
  • the spring 90 applies a force (4.9 N or 1.1 lbs. for this example spring) against the cable coupling 78 and the lower chuck body 42 to ensure effective contact.
  • the spring can axially compress or expand from the nominal height, preferably at least
  • a preferred external diameter D1 for this spring is 25.0 mm with an internal diameter D2 of 17.0 mm.
  • the spring 90 has a spacing between corresponding points on adjacent turns 94, or pitch P, of about 4.5 mm with a minimum spacing S between turns of about 0.9 mm. It is understood the spring may have any dimensions without departing from the scope of the present invention.
  • the spring 90 is made of an electrically conductive material which can withstand the thermal environment of the growth chamber 12, avoid contaminating the melt 16, and resiliently maintain application of force. Few materials maintain elasticity at these temperatures while avoiding creep failure after repetitive uses.
  • the spring 90 is formed from a dense, finegrained, isomolded graphite.
  • a particular grade of graphite is selected to have maximum strength for resiliently withstanding the forces and bending moments within a spring as it compresses and expands.
  • the material must have sufficient strength such that at the solid compressed height, maximum torsion stress in the turns 94 is below a maximum allowable torsion strength of the material.
  • the material is isomolded (i.e., having equal properties in all directions) to support the highly three-dimensional stress pattern prevalent in a spring.
  • SFG-2 grade graphite supplied by Poco Graphite, Inc. of Decatur, Texas. This graphite has the following approximate properties: compressive strength 28,000 psi (1.93 x 10 8 N/m 2 ), flexural strength 18,000 psi (1.24 x 10 8 N/m 2 ), tensile strength 13,000 psi (0.90 x 10 8 N/m 2 ), torsion strength 6,500 psi
  • the spring 90 can be made of any electrically conductive material, particularly a refractory metal such as molybdenum, tungsten, or tantalum, without departing from the scope of the invention.
  • the spring 90 is manufactured by machining a one piece, solid rod or bar of graphite material. Graphite is generally brittle and it cannot be drawn and formed as are metals when manufacturing conventional, metallic helical springs.
  • a high strength graphite such as SFG-2 can be machined without fracturing and it provides a better surface finish and integrity than refractory metals or less dense grades of graphite.
  • the bar of graphite is machined to a cylinder having the desired external spring diameter D1.
  • Material between turns 94 is next removed using a V-shaped threading tool (not shown).
  • the tool has an included angle A (Fig. 5) of about 20 degrees and a depth slightly greater than 4 mm.
  • the internal diameter D2 is next drilled and bored out to the desired dimension, and ends of the spring are machined to a square face. The result is a spring 90 with turns 94 having a trapezoidal cross section.
  • the turns 94 may have any angle or cross sectional shape without departing from the scope of this invention.
  • the chuck assembly 20 facilitates accurate detection of initial contact between the seed crystal 22 and the source melt 16. A voltage is applied across the system by the potential source 86 and the chuck is lowered. When the bottom tip of the seed crystal 22 initially contacts the melt 16, it completes an electrical circuit and current begins flowing. The circuit extends sequentially through the cable 24, coupling 78, spring 90, post 50 and lower chuck body 42, seed crystal 22, and melt 16. Detection of current establishes an accurate position of the seed crystal 22 relative to the surface of the melt 16, and establishes a reference position which may be subsequently used during the ingot pulling process.
  • Provision of an electric signal that the seed crystal has contacted the melt facilitates automation of crystal puller operation.
  • the seed crystal 22 is positioned at the initial contact point and the neck (not shown) and ingot 26 begin crystallizing on the seed.
  • the spring 90 is formed of graphite which is capable of withstanding the high temperature environment over repeated uses, and is constructed to resiliently apply axial force against the coupling 78 and lower chuck body 42 to maintain effective electrical contact as internal dimensions of the chuck vary.
  • a second application of the electrical melt sensing system and chuck assembly 20 is detection of final contact with the melt 16.
  • the spring 90 may be readily installed in existing, conventional chucks without modification. The spring is merely inserted in the socket 48 and passageway 66 of the upper chuck body 40 when the chuck is being assembled to the attached configuration. When the post 50 of the lower chuck body 42 is received in the socket 48 and the connecting pin 60 installed, the spring 90 is captured between the upper and lower chuck bodies and is an engagement with conductive portions of the upper body and lower body.
  • the spring is axially compressed to the nominal height and may resiliently adjust to variations in spacing between the upper and lower chuck bodies while continually applying force to maintain effective contact.
  • the chuck assembly 20 provides effective electrical continuity. If desired, the invention facilitates fully automated crystal puller operation without active participation by an operator, because it may be pre-programmed and avoids reliance upon visual methods. In view of the above, it will be seen that the several objects of the invention are achieved and other advantageous results obtained.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention porte sur un ensemble mandrin électroconducteur destiné à détecter un contact initial entre un cristal germe de semi-conducteur et un matériau source fondu de semi-conducteur de façon à étirer un lingot selon le processus de Czochralski. L'ensemble mandrin retient le cristal germe en le maintenant en suspension à partir d'un élément allongé. L'ensemble mandrin comprend un corps supérieur dans la continuité électrique de l'élément allongé et un corps inférieur dans la continuité électrique du cristal germe. Un élément électroconducteur s'étend entre des parties conductrices des corps supérieur et inférieur de façon à générer une continuité électrique entre le cristal germe et l'élément allongé pour permettre l'écoulement du courant lorsque le cristal germe touche le matériau fondu. L'élément conducteur est de préférence un ressort hélicoïdal qui se règle de manière résiliente par rapport aux variations dans l'espacement entre les corps supérieur et inférieur du mandrin.
PCT/US2001/015622 2001-05-15 2001-05-15 Ensemble mandrin electroconducteur pour cristal germe WO2002092885A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2001/015622 WO2002092885A1 (fr) 2001-05-15 2001-05-15 Ensemble mandrin electroconducteur pour cristal germe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/015622 WO2002092885A1 (fr) 2001-05-15 2001-05-15 Ensemble mandrin electroconducteur pour cristal germe

Publications (1)

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WO2002092885A1 true WO2002092885A1 (fr) 2002-11-21

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PCT/US2001/015622 WO2002092885A1 (fr) 2001-05-15 2001-05-15 Ensemble mandrin electroconducteur pour cristal germe

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010078205A1 (fr) * 2008-12-30 2010-07-08 Memc Electronic Materials, Inc. Procédés et assemblages de traction permettant de tirer un lingot de silicium polycristallin d'un bain de fusion de silicium
CN114737252A (zh) * 2022-04-13 2022-07-12 江苏鑫华半导体科技股份有限公司 籽晶夹头、硅芯及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957984A (ja) * 1982-09-29 1984-04-03 Sumitomo Electric Ind Ltd 種結晶又は基板の接触方法
JPH01197383A (ja) * 1988-01-30 1989-08-09 Nippon Steel Corp 磁場印加単結晶引上げ装置用種結晶保持器
US5725660A (en) * 1995-07-18 1998-03-10 Komatsu Electronic Metals Co. Ltd. Semiconductor single crystal growing apparatus
DE19754961A1 (de) * 1997-12-11 1999-06-17 Leybold Systems Gmbh Vorrichtung zum Halten eines Kristallblockes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957984A (ja) * 1982-09-29 1984-04-03 Sumitomo Electric Ind Ltd 種結晶又は基板の接触方法
JPH01197383A (ja) * 1988-01-30 1989-08-09 Nippon Steel Corp 磁場印加単結晶引上げ装置用種結晶保持器
US5725660A (en) * 1995-07-18 1998-03-10 Komatsu Electronic Metals Co. Ltd. Semiconductor single crystal growing apparatus
DE19754961A1 (de) * 1997-12-11 1999-06-17 Leybold Systems Gmbh Vorrichtung zum Halten eines Kristallblockes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 494 (C - 651) 8 November 1989 (1989-11-08) *
PATENT ABSTRACTS OF JAPAN vol. 8, no. 156 (C - 234)<1593> 19 July 1984 (1984-07-19) *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010078205A1 (fr) * 2008-12-30 2010-07-08 Memc Electronic Materials, Inc. Procédés et assemblages de traction permettant de tirer un lingot de silicium polycristallin d'un bain de fusion de silicium
US8524000B2 (en) 2008-12-30 2013-09-03 MEMC Singapore Ptd. Ltd. Pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt
US8932550B2 (en) 2008-12-30 2015-01-13 Memc Singapore Pte. Ltd. Methods for pulling a multicrystalline silicon ingot from a silicon melt
CN114737252A (zh) * 2022-04-13 2022-07-12 江苏鑫华半导体科技股份有限公司 籽晶夹头、硅芯及其制备方法

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