WO2002089192A1 - Method of wet etching an inorganic antireflection layer - Google Patents
Method of wet etching an inorganic antireflection layer Download PDFInfo
- Publication number
- WO2002089192A1 WO2002089192A1 PCT/IB2002/001411 IB0201411W WO02089192A1 WO 2002089192 A1 WO2002089192 A1 WO 2002089192A1 IB 0201411 W IB0201411 W IB 0201411W WO 02089192 A1 WO02089192 A1 WO 02089192A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- silicon
- aqueous solution
- inorganic anti
- reflective layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000001039 wet etching Methods 0.000 title description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 239000007864 aqueous solution Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000003989 dielectric material Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XMIIGOLPHOKFCH-UHFFFAOYSA-N 3-phenylpropionic acid Chemical compound OC(=O)CCC1=CC=CC=C1 XMIIGOLPHOKFCH-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 NF iF Chemical compound 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- GRWZHXKQBITJKP-UHFFFAOYSA-N dithionous acid Chemical compound OS(=O)S(O)=O GRWZHXKQBITJKP-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
Definitions
- the invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti- reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti- reflective layer.
- a conductive layer e.g. of polycrystalline silicon
- a BARC layer provided with an oxide layer
- a resist mask The regions of the oxide layer selected by the resist mask, the BARC, and the conductive layer are etched. Then the resist mask is removed so that the subjacent oxide layer becomes exposed. The oxide layer is then removed using a conventional wet etching technique and HF (hydrofluoric acid) solution, which exposes the
- CD critical dimension
- the invention has for its object inter alia to provide a method of the kind 25 mentioned in the opening paragraph in which no or substantially no changes occur in the CD.
- the method according to the invention for this purpose comprises the steps of: patterning the inorganic anti-reflective layer by means of the resist mask, patterning the layer of silicon, removing the resist mask, and removing the inorganic anti-reflective layer by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.
- the inorganic anti-reflective layer attack of the exposed sidewalls of the layer of silicon is counteracted.
- the inorganic anti-reflective layer can be removed without any important change occurring in the critical dimension (CD).
- attack of this top wall is also counteracted during the above-mentioned etching process.
- the invention further relates to an apparatus for carrying out the step of removing an inorganic anti-reflective layer by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.
- Figs. 1 to 4 show in diagrammatic cross-sectional views successive stages in the manufacture of a semiconductor device using the method in accordance with the invention.
- Figs. 1 to 4 schematically show a number of stages in a process in accordance with the invention for the manufacture of a semiconductor device.
- Fig. 1 shows a substrate 1 , which consists of a semiconductor body, for example a silicon body, provided with a layer of a dielectric material 2 as uppermost layer. It will be clear to a person skilled in the art that, dependent on the stage of the manufacturing process, the substrate 1 can consist of other layers and structures in addition.
- a layer of dielectric material 2 there is a layer of silicon 3.
- an inorganic anti-reflective layer 4 is applied, which inorganic anti-reflective layer is advantageously applied as a layer of silicon nitride or silicon oxynitride, and preferably as a layer of silicon-rich silicon nitride or silicon- rich silicon oxynitride.
- the layer of dielectric material 2, which is applied as gate dielectric layer in the present example, is advantageously composed of a material with respect to which the inorganic anti-reflective layer (4) can be selectively etched, such as silicon oxide or a silicon oxide like material.
- the inorganic anti-reflective layer 4 is provided with a resist mask 6.
- the inorganic anti-reflective layer 4 In between the inorganic anti-reflective layer 4 and the resist mask 6 another layer such as, for example, a silicon oxide layer may be present.
- the inorganic anti-reflective layer 4 is patterned by means of the resist mask 6 in a usual way. Then, the resist mask 6 is removed in a usual way (Fig. 2).
- the layer of silicon 3 is patterned in a usual way down to the layer of dielectric material 2 by means of etching while using the patterned inorganic anti-reflective layer 4 as a hard mask.
- the inorganic anti-reflective layer 4 is removed by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, preferably a concentration in the range from about 0.001 to 0.1 M.
- the aqueous solution is applied at a high temperature, preferably a temperature in the range from about 30°C to 130°C, and more preferably a temperature in the range from 100°C to 130°C.
- the temperature of the aqueous solution can be increased to a value above 100°C by using the aqueous solution at elevated pressure. This can be accomplished, for example, by delivering a pressurized inert gas into the process chamber wherein etching of the inorganic anti-reflective layer is carried out.
- Another way of accomplishing the above may be by heating up the aqueous solution to the desired temperature in a closed airtight system. During this heating-up the pressure inside the closed airtight system rises which in turn causes an increase in the temperature of the aqueous solution that can be ultimately reached.
- a still further way may be by using a hydraulic pump.
- attack of the exposed sidewalls of the layer of silicon 3 is counteracted.
- the inorganic anti-reflective layer 4 can be removed without any important change occurring in the critical dimension (CD).
- CD critical dimension
- this etching process has in addition a good selectivity with respect to the layer of dielectric material 2, that is the inorganic anti- reflective layer 4 is etched at a rate significantly greater than that of the layer of dielectric material 2.
- the etch selectivity between the inorganic anti-reflective layer 4 and the layer of silicon 3 i.e.
- the aqueous solution in such a way that the layer of silicon 3 is kept in an non-oxidized state during etching the inorganic anti-reflective layer 4. This can be accomplished by means of removal of dissolved oxygen from the aqueous solution by evacuating the aqueous solution.
- Another way concerns exchange of dissolved oxygen for an inert gas, such as nitrogen (N 2 ) or argon (Ar), by means of bubbling the inert gas through the aqueous solution.
- the aqueous solution may be applied with one or more other additives, such as, for example, a pH modifier to control the etch rate and/or etch selectivity, a surfactant to improve the surface wetting and/or an organic solvent to control e.g. the etch selectivity.
- a pH modifier examples include NH 4 OH, NF iF, HCI, HNO 3 and H 2 SO 4 .
- the process of etching the inorganic anti-reflective layer 4 can be carried out by means of a multi-wafer process in e.g. a spray tool or a wet bench.
- a multi-wafer process is a process in which multiple wafers are processed simultaneously in one and the same process chamber.
- the process of etching the inorganic anti-reflective layer can also be advantageously carried out by means of a single-wafer process, i.e. a process in which just one wafer is processed in one and the same process chamber at a time.
- the device may be subjected to further usual and generally known process steps for the manufacture of integrated circuits, such as the provision of source and drain zones in the semiconductor body and the provision of connections between the transistors.
- process steps for the manufacture of integrated circuits such as the provision of source and drain zones in the semiconductor body and the provision of connections between the transistors.
- the resist mask may also be removed after the layer of silicon is patterned.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002586393A JP2004530301A (en) | 2001-04-27 | 2002-04-18 | Method for wet etching non-organic antireflection layer |
EP02724538A EP1386350A1 (en) | 2001-04-27 | 2002-04-18 | Method of wet etching an inorganic antireflection layer |
US10/475,884 US7001838B2 (en) | 2001-04-27 | 2002-04-18 | Method of wet etching an inorganic antireflection layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01201595.4 | 2001-04-27 | ||
EP01201595 | 2001-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002089192A1 true WO2002089192A1 (en) | 2002-11-07 |
WO2002089192A8 WO2002089192A8 (en) | 2002-12-05 |
Family
ID=8180237
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2002/001412 WO2002089193A1 (en) | 2001-04-27 | 2002-04-18 | Method of wet etching a silicon and nitrogen containing material |
PCT/IB2002/001411 WO2002089192A1 (en) | 2001-04-27 | 2002-04-18 | Method of wet etching an inorganic antireflection layer |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2002/001412 WO2002089193A1 (en) | 2001-04-27 | 2002-04-18 | Method of wet etching a silicon and nitrogen containing material |
Country Status (5)
Country | Link |
---|---|
US (3) | US7001838B2 (en) |
EP (2) | EP1386350A1 (en) |
JP (2) | JP2004530301A (en) |
KR (2) | KR100867086B1 (en) |
WO (2) | WO2002089193A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060011586A1 (en) * | 2004-07-14 | 2006-01-19 | Shea Kevin R | Method of etching nitrides |
KR101070204B1 (en) * | 2006-02-01 | 2011-10-06 | 자이단호진 고쿠사이카가쿠 신고우자이단 | Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface |
US7902082B2 (en) * | 2007-09-20 | 2011-03-08 | Samsung Electronics Co., Ltd. | Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers |
US8354347B2 (en) * | 2007-12-11 | 2013-01-15 | Globalfoundries Singapore Pte. Ltd. | Method of forming high-k dielectric stop layer for contact hole opening |
US20110076623A1 (en) * | 2009-09-29 | 2011-03-31 | Tokyo Electron Limited | Method for reworking silicon-containing arc layers on a substrate |
JP5913869B2 (en) * | 2011-08-31 | 2016-04-27 | 林純薬工業株式会社 | Etching solution composition and etching method |
US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
TWI558850B (en) * | 2014-03-29 | 2016-11-21 | 精密聚合物股份有限公司 | The processing liquid for electronic components and the production method of electronic components |
Citations (6)
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US3607480A (en) * | 1968-12-30 | 1971-09-21 | Texas Instruments Inc | Process for etching composite layered structures including a layer of fluoride-etchable silicon nitride and a layer of silicon dioxide |
US3709749A (en) * | 1969-12-01 | 1973-01-09 | Fujitsu Ltd | Method of etching insulating films |
JPH04192525A (en) * | 1990-11-27 | 1992-07-10 | Nec Corp | Nitride film wet etching device |
JPH0669303A (en) * | 1992-08-13 | 1994-03-11 | Mitsubishi Materials Corp | Method and apparatus for measuring thickness of oxide film on surface of silicon wafer |
JPH1064877A (en) * | 1996-08-14 | 1998-03-06 | Oki Electric Ind Co Ltd | Method for etching silicon nitride film and its device |
US6121123A (en) * | 1997-09-05 | 2000-09-19 | Advanced Micro Devices, Inc. | Gate pattern formation using a BARC as a hardmask |
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US4269654A (en) * | 1977-11-18 | 1981-05-26 | Rca Corporation | Silicon nitride and silicon oxide etchant |
JPH0541548Y2 (en) * | 1987-10-01 | 1993-10-20 | ||
JPH0296334A (en) * | 1988-10-01 | 1990-04-09 | Nisso Eng Kk | Method of circulation of high temperature etching solution |
JP3072876B2 (en) * | 1993-09-17 | 2000-08-07 | 日曹エンジニアリング株式会社 | Etching solution purification method |
JPH09275091A (en) * | 1996-04-03 | 1997-10-21 | Mitsubishi Electric Corp | Etching device of semiconductor nitride film |
JP3433632B2 (en) * | 1996-12-10 | 2003-08-04 | カシオ計算機株式会社 | Method for manufacturing thin film transistor |
JP3408090B2 (en) * | 1996-12-18 | 2003-05-19 | ステラケミファ株式会社 | Etching agent |
TW477907B (en) | 1997-03-07 | 2002-03-01 | Toshiba Corp | Array substrate, liquid crystal display device and their manufacturing method |
WO1999039999A1 (en) * | 1998-02-09 | 1999-08-12 | Nikon Corporation | Apparatus for supporting base plate, apparatus and method for transferring base plate, method of replacing base plate, and exposure apparatus and method of manufacturing the same |
JP2001168092A (en) * | 1999-01-08 | 2001-06-22 | Toshiba Corp | Semiconductor device and its manufacturing method |
US6200863B1 (en) * | 1999-03-24 | 2001-03-13 | Advanced Micro Devices, Inc. | Process for fabricating a semiconductor device having assymetric source-drain extension regions |
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JP3389166B2 (en) * | 1999-09-10 | 2003-03-24 | 日本電気株式会社 | Stripping composition for resist |
KR100327342B1 (en) * | 1999-10-27 | 2002-03-06 | 윤종용 | Composite etchant for a nitride etching in a semiconductor process and an etching method using the same etchant |
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JP2002341525A (en) * | 2001-05-14 | 2002-11-27 | Fuji Photo Film Co Ltd | Positive photoresist transfer material and method for working surface of substrate using the same |
US20060005771A1 (en) * | 2004-07-12 | 2006-01-12 | Applied Materials, Inc. | Apparatus and method of shaping profiles of large-area PECVD electrodes |
-
2002
- 2002-04-18 WO PCT/IB2002/001412 patent/WO2002089193A1/en active Application Filing
- 2002-04-18 KR KR1020027017740A patent/KR100867086B1/en not_active IP Right Cessation
- 2002-04-18 EP EP02724538A patent/EP1386350A1/en not_active Withdrawn
- 2002-04-18 JP JP2002586393A patent/JP2004530301A/en active Pending
- 2002-04-18 KR KR1020027017741A patent/KR100876170B1/en not_active IP Right Cessation
- 2002-04-18 US US10/475,884 patent/US7001838B2/en not_active Expired - Lifetime
- 2002-04-18 EP EP02724539A patent/EP1386351A1/en not_active Withdrawn
- 2002-04-18 WO PCT/IB2002/001411 patent/WO2002089192A1/en active Application Filing
- 2002-04-18 US US10/475,874 patent/US6887796B2/en not_active Expired - Fee Related
- 2002-04-18 JP JP2002586394A patent/JP4242158B2/en not_active Expired - Fee Related
-
2005
- 2005-03-30 US US11/096,125 patent/US20050211375A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607480A (en) * | 1968-12-30 | 1971-09-21 | Texas Instruments Inc | Process for etching composite layered structures including a layer of fluoride-etchable silicon nitride and a layer of silicon dioxide |
US3709749A (en) * | 1969-12-01 | 1973-01-09 | Fujitsu Ltd | Method of etching insulating films |
JPH04192525A (en) * | 1990-11-27 | 1992-07-10 | Nec Corp | Nitride film wet etching device |
JPH0669303A (en) * | 1992-08-13 | 1994-03-11 | Mitsubishi Materials Corp | Method and apparatus for measuring thickness of oxide film on surface of silicon wafer |
JPH1064877A (en) * | 1996-08-14 | 1998-03-06 | Oki Electric Ind Co Ltd | Method for etching silicon nitride film and its device |
US6121123A (en) * | 1997-09-05 | 2000-09-19 | Advanced Micro Devices, Inc. | Gate pattern formation using a BARC as a hardmask |
Non-Patent Citations (4)
Title |
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DECKERT C A: "PATTERN ETCHING OF CVD SI3N4/SIO2 COMPOSITES IN HF/GLYCEROL MIXTURES", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 127, no. 2, February 1980 (1980-02-01), pages 2433 - 2438, XP000840506, ISSN: 0013-4651 * |
PATENT ABSTRACTS OF JAPAN vol. 016, no. 513 (E - 1283) 22 October 1992 (1992-10-22) * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 311 (E - 1561) 14 June 1994 (1994-06-14) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 08 30 June 1998 (1998-06-30) * |
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KR100876170B1 (en) | 2008-12-31 |
JP2004530301A (en) | 2004-09-30 |
US20050211375A1 (en) | 2005-09-29 |
KR20040002407A (en) | 2004-01-07 |
WO2002089192A8 (en) | 2002-12-05 |
US6887796B2 (en) | 2005-05-03 |
EP1386351A1 (en) | 2004-02-04 |
WO2002089193A1 (en) | 2002-11-07 |
US7001838B2 (en) | 2006-02-21 |
JP2004528716A (en) | 2004-09-16 |
US20040121600A1 (en) | 2004-06-24 |
JP4242158B2 (en) | 2009-03-18 |
KR100867086B1 (en) | 2008-11-04 |
EP1386350A1 (en) | 2004-02-04 |
US20040115926A1 (en) | 2004-06-17 |
KR20040002406A (en) | 2004-01-07 |
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