KR20030001782A - method for cleaning of semiconductor device - Google Patents

method for cleaning of semiconductor device Download PDF

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Publication number
KR20030001782A
KR20030001782A KR1020010037469A KR20010037469A KR20030001782A KR 20030001782 A KR20030001782 A KR 20030001782A KR 1020010037469 A KR1020010037469 A KR 1020010037469A KR 20010037469 A KR20010037469 A KR 20010037469A KR 20030001782 A KR20030001782 A KR 20030001782A
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cleaning
semiconductor device
wet
deionized water
wet chemical
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KR1020010037469A
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Korean (ko)
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김동희
최근민
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주식회사 하이닉스반도체
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Priority to KR1020010037469A priority Critical patent/KR20030001782A/en
Publication of KR20030001782A publication Critical patent/KR20030001782A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: A method for cleaning semiconductor devices is provided to remove defective portions of an interlayer dielectric by using wet chemicals before growing a silicon epitaxial layer. CONSTITUTION: After forming an interlayer dielectric(23) on a semiconductor substrate(21), a contact hole(24) is formed to expose the substrate(21) by selectively etching the interlayer dielectric(23). At this time, defective portions(25) are generated on the interlayer dielectric and the substrate. A wet-cleaning is performed so as to remove the defective portions(25) by using mixed solutions of NH4OH and deionized water or NH4OH, H2O2 and deionized water as a wet chemical.

Description

반도체소자의 세정방법{method for cleaning of semiconductor device}Method for cleaning of semiconductor device

본 발명은 반도체소자의 세정방법에 관한 것으로서, 보다 상세하게 에피택셜층을 성장시키기 전에 반도체기판 및 층간절연막의 손상된 부분을 한 번의 습식 세정공정으로 제거하는 반도체소자의 세정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaning a semiconductor device, and more particularly, to a method of cleaning a semiconductor device in which damaged portions of a semiconductor substrate and an interlayer insulating film are removed by one wet cleaning process before the epitaxial layer is grown.

일반적으로, 반도체의 집적회로(Intergrated Circuit, IC)는 다양한 종류의박막(Thin Film)에 대하여 패턴을 형성하고 이를 적층(Stacking)함으로써 형성된다. 그리고, 이와 같은 과정 중 임의의 박막위에 감광막(photoresist, PR) 등을 패턴 마스크로 하여 마스킹이 되어 있지 않는 부분을 화학적 또는 물리적인 반응을 이용하여 제거하는 것을 식각(Etching)이라 한다.In general, an integrated circuit (IC) of a semiconductor is formed by forming patterns on various kinds of thin films and stacking them. In this process, the photomask (PR) is used as a pattern mask on an arbitrary thin film to remove portions that are not masked by chemical or physical reactions, called etching.

이러한 식각 공정에는 크게 습식과 건식 식각으로 나눌 수 있는 데, 용기에 산성 용액을 채운 후 웨이퍼를 일정시간 동안 담그어 처리하는 습식식각과 피가공 재료 위에 기체를 공급함으로써 활성화된 기체와 피가공 박막과의 반응을 통하여 증기압이 높은 물질을 생성시킴으로서 제거하는 건식식각이 있다.This etching process can be divided into wet and dry etching. The wet etching process is performed by filling a container with an acidic solution and then immersing the wafer for a predetermined time to supply a gas to the workpiece and the activated thin film to be processed. There is a dry etching that removes by generating a high vapor pressure material through the reaction.

반도체소자는 적층공정과 식각공정을 반복함으로써 형성되고, 상기 적층공정과 식각공정 후에는 세정공정이 따르게 된다.The semiconductor device is formed by repeating the lamination process and the etching process, and the cleaning process is followed by the lamination process and the etching process.

이하, 첨부된 도면을 참고로 하여 종래기술에 대하여 설명한다.Hereinafter, with reference to the accompanying drawings will be described in the prior art.

도 1a 내지 도 1d는 종래기술에 따른 반도체소자의 세정방법을 도시한 공정 단면도로서, 에피택셜 실리콘층을 성장시키기 전 공정을 도시한다.1A to 1D are cross-sectional views illustrating a method of cleaning a semiconductor device according to the related art, and show a process before growing an epitaxial silicon layer.

먼저, 반도체기판(11) 상부에 층간절연막(13)을 형성한다.First, an interlayer insulating film 13 is formed on the semiconductor substrate 11.

다음, 콘택마스크를 식각마스크로 상기 층간절연막(13)을 식각하여 상기 반도체기판(11)을 노출시키는 콘택홀(14)을 형성한다. 이때, 상기 식각공정으로 상기 층간절연막(13)과 반도체기판(11)의 표면에 손상된 부분(15)이 발생한다. (도 1a 참조)Next, the interlayer insulating layer 13 is etched using a contact mask as an etch mask to form a contact hole 14 exposing the semiconductor substrate 11. In this case, a portion 15 is damaged on the surface of the interlayer insulating layer 13 and the semiconductor substrate 11 by the etching process. (See Figure 1A)

그 다음, 상기 노출되는 반도체기판(11)에 에피택셜 실리콘층(도시안됨)을 형성한다. 이때, 상기 에피택셜 실리콘층을 형성하기 전에 상기 층간절연막(13)과반도체기판(11)의 표면에 손상된 부분(15)을 제거하는 세정공정을 실시한다.Next, an epitaxial silicon layer (not shown) is formed on the exposed semiconductor substrate 11. At this time, before forming the epitaxial silicon layer, a cleaning process of removing the damaged portion 15 on the surface of the interlayer insulating film 13 and the semiconductor substrate 11 is performed.

상기 세정공정은 3단계에 걸쳐 실시된다.The cleaning process is carried out in three stages.

먼저, 1단계로 플라즈마 식각 처리(plasma etch treatment)공정을 이용한 건식세정공정을 통하여 식각공정 중 손상된 부분(15)을 제거한다. 이때, 상기 층간절연막(13) 표면의 손상된 부분(15)은 제거되고, 상기 반도체기판(11) 상에는 SiO2막(17)이 형성된다. (도 1b 참조)First, the damaged part 15 of the etching process is removed through a dry cleaning process using a plasma etch treatment process in one step. At this time, the damaged portion 15 of the surface of the interlayer insulating film 13 is removed, and the SiO 2 film 17 is formed on the semiconductor substrate 11. (See FIG. 1B)

다음, 습식 케미칼(chemical)을 이용한 습식세정공정으로 상기 건식세정 후 발생한 SiO2막(17)을 제거한다. 이때, 상기 습식세정 후 잔류하는 SiO2막(19)이 발생한다. 상기 습식세정공정은 유기물을 제거하기 위해 H2SO4와 H2O2혼합용액을 사용하고 산화막을 제거하기 위하여 불소계열의 습식케미칼을 사용한다. (도 1c 참조)Next, the SiO 2 film 17 generated after the dry cleaning is removed by a wet cleaning process using a wet chemical. At this time, the SiO 2 film 19 remaining after the wet cleaning is generated. The wet cleaning process uses a H 2 SO 4 and H 2 O 2 mixed solution to remove organic matter, and uses a fluorine-based wet chemical to remove the oxide film. (See Figure 1C)

그 다음, 인-시튜(in-situ)로 H2분위기에서 베이크공정을 실시하여 상기 습식세정 후 잔류하는 SiO2막(19) 및 표면 불순물을 제거한다. (도1d 참조)Then, a bake process is performed in H 2 atmosphere in-situ to remove the SiO 2 film 19 and surface impurities remaining after the wet cleaning. (See Figure 1D)

상기와 같이 종래기술에 따른 반도체소자의 세정방법은, 서로 다른 종류의 세정공정이 각각 다른 장비에서 실시되어 공정이 복잡하고, 특히 마지막에 실시되는 베이크공정은 900℃ 이상의 고온에서 실시되기 때문에 접합 깊이(junction depth) 조절 등에 악영향을 미쳐 소자의 동작 특성 및 신뢰성을 저하시키는 문제점이 있다.As described above, the method for cleaning a semiconductor device according to the prior art is complicated because different kinds of cleaning processes are performed in different equipments, and the baking process is performed at a high temperature of 900 ° C. or higher, especially since the last baking process is performed. There is a problem that adversely affects the (junction depth) adjustment, such as to lower the operating characteristics and reliability of the device.

본 발명은 상기와 같은 문제점을 해결하기 위한 것으로서, 에피택셜 실리콘층을 성장시키기 전에 한 가지 습식 케미칼을 이용하여 반도체기판 및 층간절연막의 손상된 부분을 제거하는 반도체소자의 세정방법을 제공함에 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and to provide a method for cleaning a semiconductor device by removing a damaged portion of the semiconductor substrate and the interlayer insulating film by using a single wet chemical before growing the epitaxial silicon layer.

도 1a 내지 도 1d는 종래기술에 따른 반도체소자의 세정방법을 도시한 공정 단면도.1A to 1D are cross-sectional views illustrating a method of cleaning a semiconductor device according to the prior art.

도 2a 및 도 2b는 본 발명에 따른 반도체소자의 세정방법을 도시한 공정 단면도.2A and 2B are cross-sectional views illustrating a method of cleaning a semiconductor device in accordance with the present invention.

〈도면의 주요 부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>

11, 21 : 반도체기판 13, 23 : 층간절연막11, 21: semiconductor substrate 13, 23: interlayer insulating film

14, 24 : 콘택홀 15, 25 : 손상된 부분14, 24: contact hole 15, 25: damaged part

17 : 건식세정 후 발생한 SiO2막 19 : 습식세정 후 잔류하는 SiO2막17: SiO 2 film generated after dry cleaning 19: SiO 2 film remaining after wet cleaning

상기와 같은 목적을 달성하기 위한 본 발명에 따른 반도체소자의 세정방법의 특징은,Features of the cleaning method of a semiconductor device according to the present invention for achieving the above object,

콘택홀을 형성하기 위한 건식식각공정 후 실리콘층과 산화막의 손상된 부분을 동시에 제거할 수 있는 NH4OH계열의 습식 케미칼을 이용한 습식세정 공정을 포함하는 것을 특징으로 한다.And a wet cleaning process using NH 4 OH-based wet chemicals capable of simultaneously removing damaged portions of the silicon layer and the oxide film after the dry etching process for forming the contact holes.

이하, 본 발명에 따른 반도체소자의 세정방법에 관하여 첨부 도면을 참조하여 상세히 설명한다.Hereinafter, a method of cleaning a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

도 2a 및 도 2b는 본 발명에 따른 반도체소자의 세정방법을 도시한 공정 단면도이다.2A and 2B are cross-sectional views illustrating a method of cleaning a semiconductor device according to the present invention.

먼저, 반도체기판(21) 상부에 층간절연막(23)을 형성한다.First, an interlayer insulating film 23 is formed on the semiconductor substrate 21.

다음, 콘택마스크를 식각마스크로 상기 층간절연막(23)을 건식식각하여 상기 반도체기판(21)을 노출시키는 콘택홀(24)을 형성한다. 이때, 상기 건식식각공정으로 상기 반도체기판(21)과 층간절연막(23)의 표면에 손상된 부분(25)이 발생한다. (도 2a 참조)Next, the interlayer insulating layer 23 is dry etched using a contact mask as an etch mask to form a contact hole 24 exposing the semiconductor substrate 21. At this time, a damaged portion 25 is generated on the surface of the semiconductor substrate 21 and the interlayer insulating film 23 by the dry etching process. (See Figure 2A)

그 다음, 상기 손상된 부분(25)을 제거하기 위한 세정공정을 실시한다.Next, a cleaning process for removing the damaged portion 25 is performed.

상기 세정공정은 습식세정공정으로서 습식케미칼을 이용하여 실시된다. 상기 습식케미칼은 탈이온수에 0.05 ∼ 1wt%의 NH4OH가 혼합된 용액, 탈이온수에 0.05 ∼ 1wt%의 NH4OH와 0.5 wt%의 H2O2가 혼합된 용액, 탈이온수에 0.01 ∼ 0.1wt%의 HF와 0.5 wt%의 H2O2가 혼합된 용액 또는 탈이온수에 0.01 ∼ 0.1wt%의 HF와 0.5 ∼ 5wt%의 HNO3가 혼합된 용액이 사용된다.The washing step is performed using a wet chemical as a wet washing step. The wet chemical is a solution in which 0.05 to 1 wt% of NH 4 OH is mixed in deionized water, a solution in which 0.05 to 1 wt% of NH 4 OH and 0.5 wt% H 2 O 2 is mixed in deionized water, and 0.01 to A solution in which 0.1 wt% HF and 0.5 wt% H 2 O 2 is mixed or 0.01 to 0.1 wt% HF and 0.5 to 5 wt% HNO 3 in deionized water is used.

이때, 상기 NH4OH의 OH-는 기본적으로 실리콘을 식각하는 특성이 있고, 손상된 실리콘에 대해서는 더 빠른 식각률을 갖는다.At this time, OH- of the NH 4 OH has a characteristic of etching silicon basically, and has a faster etching rate for the damaged silicon.

그리고, 상기 반도체기판(21)의 손상된 부분(25)을 제거하기 위해서는 먼저 손상된 부분(25)을 산화시켜야 한다. 이때, 산화제로 H2O2또는 용존산소가 사용된다.In order to remove the damaged portion 25 of the semiconductor substrate 21, the damaged portion 25 must first be oxidized. At this time, H 2 O 2 or dissolved oxygen is used as the oxidizing agent.

한편, 손상된 부분(25)의 두께가 두꺼운 경우 H2O2와 NH4OH를 이용한 메카니즘을 반복하고 잔류하는 산화막은 불소계열의 케미칼을 이용하여 제거할 수 있다. (도 2b 참조)On the other hand, when the damaged portion 25 is thick, the mechanism using H 2 O 2 and NH 4 OH is repeated, and the remaining oxide film can be removed using a fluorine-based chemical. (See Figure 2b)

이상에서 설명한 바와 같이, 본 발명에 따른 반도체소자의 세정방법은 콘택을 형성하기 위한 건식식각 공정 후 반도체기판과 층간절연막의 손상된 표면을 제거하기 위해서 NH4OH 또는 NH4OH와 H2O2가 혼합용액을 습식 케미칼(wet chemical)을 이용한 습식세정공정을 실시한 후 에피택셜(epitaxial) 실리콘층을 성장시킴으로써고온 공정을 생략할 수 있으므로 소자의 동작 특성이 저하되는 것을 방지할 수 있고, 공정 단계를 감소시켜 공정을 단순하게 하는 이점이 있다.As described above, in the method of cleaning a semiconductor device according to the present invention, NH 4 OH or NH 4 OH and H 2 O 2 are added to remove the damaged surface of the semiconductor substrate and the interlayer insulating film after the dry etching process for forming the contact. Since the high temperature process can be omitted by growing the epitaxial silicon layer after the wet cleaning process using a wet chemical, the mixed solution can be prevented from deteriorating the operating characteristics of the device, There is an advantage to simplify the process by reducing.

Claims (6)

콘택홀을 형성하기 위한 건식식각공정 후 실리콘층과 산화막의 손상된 부분을 동시에 제거할 수 있는 NH4OH계열의 습식 케미칼을 이용한 습식세정 공정을 포함하는 반도체소자의 세정방법.A method of cleaning a semiconductor device comprising a wet cleaning process using a NH 4 OH-based wet chemical that can simultaneously remove damaged portions of a silicon layer and an oxide film after a dry etching process for forming contact holes. 제 1 항에 있어서,The method of claim 1, 상기 습식케미칼은 탈이온수에 0.05 ∼ 1wt%의 NH4OH가 혼합된 용액인 것을 특징으로 하는 반도체소자의 세정방법.The wet chemical is a cleaning method of a semiconductor device, characterized in that a solution of NH 4 OH of 0.05 ~ 1wt% mixed in deionized water. 제 1 항에 있어서,The method of claim 1, 상기 습식케미칼은 탈이온수에 0.05 ∼ 1wt%의 NH4OH와 0.5 wt%의 H2O2가 혼합된 용액인 것을 특징으로 하는 반도체소자의 세정방법.The wet chemical is a cleaning method of a semiconductor device, characterized in that a solution of 0.05 ~ 1wt% NH 4 OH and 0.5 wt% H 2 O 2 mixed in deionized water. 제 1 항에 있어서,The method of claim 1, 상기 습식케미칼은 탈이온수에 0.01 ∼ 0.1wt%의 HF와 0.5 wt%의 H2O2가 혼합된 용액인 것을 특징으로 하는 반도체소자의 세정방법.The wet chemical is a cleaning method of a semiconductor device, characterized in that a solution of 0.01 ~ 0.1wt% HF and 0.5wt% H 2 O 2 mixed in deionized water. 제 1 항에 있어서,The method of claim 1, 상기 습식케미칼은 탈이온수에 0.01 ∼ 0.1wt%의 HF와 0.5 ∼ 5wt%의 HNO3가 혼합된 용액인 것을 특징으로 하는 반도체소자의 세정방법.The wet chemical is a cleaning method of a semiconductor device, characterized in that a solution of 0.01 ~ 0.1wt% HF and 0.5 ~ 5wt% HNO 3 mixed in deionized water. 제 1 항에 있어서,The method of claim 1, 상기 습식케미칼은 탈이온수에 0.05 ∼ 1wt%의 NH4OH와 0.5 %의 H2O2가 혼합된 용액인 것을 특징으로 하는 반도체소자의 세정방법.The wet chemical is a cleaning method of a semiconductor device, characterized in that a solution of 0.05 ~ 1wt% NH 4 OH and 0.5% H 2 O 2 mixed in deionized water.
KR1020010037469A 2001-06-28 2001-06-28 method for cleaning of semiconductor device KR20030001782A (en)

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Publication number Priority date Publication date Assignee Title
CN105448652A (en) * 2014-08-21 2016-03-30 中芯国际集成电路制造(上海)有限公司 Contact tank cleaning process and contact layer forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448652A (en) * 2014-08-21 2016-03-30 中芯国际集成电路制造(上海)有限公司 Contact tank cleaning process and contact layer forming method

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