CN105448652A - Contact tank cleaning process and contact layer forming method - Google Patents
Contact tank cleaning process and contact layer forming method Download PDFInfo
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- CN105448652A CN105448652A CN201410415548.2A CN201410415548A CN105448652A CN 105448652 A CN105448652 A CN 105448652A CN 201410415548 A CN201410415548 A CN 201410415548A CN 105448652 A CN105448652 A CN 105448652A
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Abstract
The invention provides a contact tank cleaning process and a contact layer forming method. The contact tank cleaning process comprises the following steps of: S1, cleaning the bottom surface of a contact tank by using SC1 cleaning liquid and removing particles on the bottom surface; S2, after the step S1, cleaning the bottom surface by using ozonization deionized water, oxidizing the bottom surface and forming a oxide on the bottom surface in order that the bottom surface tends to smoothness; S3, and after the step S2, cleaning the bottom surface by using a SiCoNi pre-cleaning process and removing the oxide formed in the step S2. The contact tank cleaning process enhances the contact degree between metal silicide and a silicon surface between the metallic plug of the contact layer and the silicon surface so as to decrease contact resistance and improve the electrical performance of a semiconductor component.
Description
Technical field
The application relates to technical field of manufacturing semiconductors, more specifically, relates to and a kind ofly contacts the cleaning procedure of groove and the formation method of contact layer.
Background technology
In integrated circuit fabrication, usually need between the metal closures and silicon face of contact layer (contact, CT), to arrange metal silicide to increase electric conductivity.If before metal silicide is formed at contact layer, be first metal silicide technology (silicide-firstprosess); If after metal silicide is formed at contact layer, then it is rear metal silicide technology (silicide-lastprosess).
In prior art, the pre-clear technique of SiCoNi is generally used as cleaning metal silicide surface in first metal silicide technology.But in rear metal silicide technology, because the silicon face for the formation of metal silicide after etching is unclean and rough, the silicon face adopting the pre-clear technique of SiCoNi to be not enough to forming metal silicide carries out surface treatment.
Fig. 1 is after adopting the pre-clear technique of SiCoNi to carry out surface treatment to the silicon face forming metal silicide in rear metal silicide technology, the scanning electron microscope (SEM) photograph of the metal silicide formed and corresponding active area and contact layer.As shown in Figure 1, wherein, metal silicide 20 ' (as NiPtSi metal silicide) is arranged between the silicon face of active area 10 ' and the metal closures 30 ' of contact layer, but, owing to only adopting the pre-clear technique of SiCoNi before formation metal silicide 20 ', surface treatment is carried out to silicon face, therefore, and it is rough and uneven in surface between the silicon face of active area 10 ', this causes metal silicide 20 ' to increase with the contact resistance of active area 10 ', thus has a negative impact to the electric property of semiconductor components and devices.
In addition, along with CMOS (ComplementaryMetalOxideSemi-conductor, CMOS (Complementary Metal Oxide Semiconductor)) characteristic size reach 20nm and following, after high-k/metal gate, grid technique (HighkMetalGatelast) is applied, but needs annealing in process to improve the quality of high K medium material after high K medium deposition of material.High temperature during annealing in process can have an impact to NiPtSi metal silicide, therefore, in order to avoid this impact, metal silicide between the metal closures and silicon face of contact layer need be formed after metal gate is formed, and NiPt or W need be deposited when forming this metal silicide in the contact groove of ILD (interlayerdielectric, inter-level dielectric).
Under normal circumstances, in the formation process of NiPtSi metal silicide, by inter-level dielectric CMP (ChemicalMechanicalPolishing, chemico-mechanical polishing), after photoresist covers, step such as etching inter-level dielectric etc. defines contact groove, need clean contact groove, after clean, in the lower surface of contact groove, form NiPtSi metal silicide again.In prior art, the cleaning procedure adopted during clean contact groove for first cleaning contact groove with DHF cleaning procedure, then cleans contact groove by the pre-clear technique of SiCoNi.
Fig. 2 A to Fig. 2 C is the structural representation of the main flow node forming contact layer in the rear grid technique of prior art.Wherein, Fig. 2 A is in the rear grid technique of prior art in contact layer forming process, the structural representation that contact trench etch is complete; Fig. 2 B is in the rear grid technique of prior art, contact in contact layer forming process groove clean after structural representation; Fig. 2 C is in the rear grid technique of prior art, forms metal silicide (as NiPtSi) and structural representation after plated metal plug material (as tungsten) in contact layer forming process.
In Fig. 2 A to Fig. 2 C, each label represents respectively: 1 is silicon substrate, and 2 is STI (ShallowTrenchIsolation, shallow trench isolation from), 3 is doped region (as N+ district or P+ district), and 4 is high-K metal gate, 5 is SiN layer, 6 is ILD layer (as PEOX, plasma heavier-duty Si oxide), and 7 is coarse silicon face, 8 is smooth silicon face, 9 is metal silicide, and 11 is the metal closures of contact layer, and 19 is contact groove.
In prior art shown in Fig. 2 A to Fig. 2 C, owing to adopting DHF cleaning procedure to clean contact groove before the pre-clear technique of SiCoNi, DHF cleaning adopts HF solution as cleaning fluid, and HF has higher rate of etch to the oxide forming ILD, not only the lower surface of contact groove is cleaned, also the side direction of contact groove and the ILD oxide portions at top are removed, this becomes large by causing the critical size of the metal closures of contact layer, also causes the metal closures of contact layer to shorten simultaneously.Thus the electric property of semiconductor components and devices is deteriorated, and be the semiconductor components and devices of below 20nm for live width, even may seriously to causing short circuit between adjacent electrode.
Summary of the invention
The application's object is that providing a kind of contacts the cleaning procedure of groove and the formation method of contact layer, is intended to the electric property improving semiconductor components and devices.
The application's first aspect provides a kind of cleaning procedure contacting groove, and described cleaning procedure comprises the steps: step S1: adopt SC1 cleaning fluid to clean the lower surface of described contact groove, remove the particle of described lower surface; Step S2: after described step S1, adopts ozonated deionized water to clean described lower surface, is oxidized described lower surface and forms oxide in described lower surface to make described lower surface smooth-out; Step S3: after described step S2, adopts the pre-clear technique of SiCoNi to clean described lower surface, removes the described oxide formed in described step S2.
Further, in described step S1, in described SC1 cleaning fluid, the volume ratio of each composition is NH4OH:H2O2:H2O=1:1 ~ 4:50 ~ 200.
Further, in described step S1, the cleaning temperature of employing is room temperature 23 DEG C to 25 DEG C.
Further, in described step S1, the time that cleaning continues is 30s to 120s.
Further, in described step S2, O in described ozonated deionized water
3concentration be 10ppm to 80ppm.
Further, in described step S2, the cleaning temperature of employing is room temperature 23 DEG C to 25 DEG C.
Further, in described step S2, the time that cleaning continues is 30s to 120s.
Further, in described step S3, the removal quantity of described oxide is
The application's second aspect provides a kind of formation method of contact layer, and described formation method comprises the steps: step S20: etch to form contact groove to inter-level dielectric; Step S40: after described step S20, adopts the lower surface of cleaning procedure to described contact groove contacting groove according to any one of the application's first aspect to clean; Step S60: after described step S40, the lower surface of described contact groove deposits the first metal and forms metal silicide; Step S80: after described step S60, deposits the second metal to form contact layer in described contact groove.
Further, described step S60 comprises: sub-step S62: in the lower surface of described contact groove, deposit described first metal; Sub-step S64: carry out thermal annealing, forms metal silicide; Sub-step S66: remove unreacted described first metal.
Further, described first metal is NiPt or W.
Further, described first metal deposited in described sub-step S62 is NiPt; Described sub-step S64 comprises: S641 step by step, carries out a thermal annealing to generate Ni2PtSi; S643 step by step, carries out second heat annealing to generate NiPtSi metal silicide after described S641 step by step; Described sub-step S66 is at described S641 step by step and describedly carry out between S643 step by step.
Further, a described thermal annealing is Low Temperature Thermal annealing, and the temperature of Low Temperature Thermal annealing is 230 DEG C to 300 DEG C, and annealing time is 20s to 40s; Described second heat is annealed into high-temperature thermal annealing, and the temperature of high-temperature thermal annealing is 450 DEG C to 600 DEG C, and annealing time is 20s to 40s, or the annealing of described second heat adopts laser annealing, and the temperature of laser annealing is 800 DEG C to 900 DEG C.
Further, in described sub-step S66, the mixture of sulfuric acid and hydrogen peroxide is adopted to carry out wet method stripping to described first metal.
According to the cleaning procedure of the contact groove of the application and the formation method of contact layer, due to the lower surface adopting SC1 cleaning fluid to clean contact groove, remove the particle of this lower surface, and adopt ozonated deionized water to clean this lower surface, being oxidized this lower surface and forming oxide in this lower surface makes this lower surface smooth-out, lower surface is cleaned again by the pre-clear technique of SiCoNi, the oxide formed in cleaning course before removing, exposure level between metal silicide between the metal closures of contact layer and silicon face and silicon face can be improved, thus minimizing contact resistance, improve the electric property of semiconductor components and devices.In addition, adopt in the rear grid technique of above cleaning procedure replacement the conventional cleaning process that DHF cleaning procedure when forming contact layer and the pre-clear process integration of SiCoNi use, the critical size of the metal closures of contact layer can be improved, thus improve the electric property of semiconductor components and devices.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 is in rear metal silicide technology, adopts the pre-clear technique of SiCoNi, after surface treatment is carried out to the silicon face forming metal silicide, and the scanning electron microscope (SEM) photograph of the metal silicide formed and corresponding active area and contact layer;
Fig. 2 A is in the rear grid technique of prior art in contact layer forming process, the structural representation that contact trench etch is complete;
Fig. 2 B is in the rear grid technique of prior art in contact layer forming process, the structural representation after contact groove cleans;
Fig. 2 C is in the rear grid technique of prior art in contact layer forming process, forms metal silicide and structural representation after plated metal plug material;
Fig. 3 A is in the cleaning procedure of contact groove of the application's preferred embodiment, adopts the structural representation that SC1 cleaning fluid cleans contact groove;
Fig. 3 B is in the cleaning procedure of contact groove of the application's preferred embodiment, adopts the structural representation that ozonated deionized water cleans contact groove;
Fig. 3 C is in the cleaning procedure of contact groove of the application's preferred embodiment, adopts the structural representation that the pre-clear technique of SiCoNi cleans contact groove;
Fig. 3 D is after the cleaning procedure of the contact groove adopting the application's preferred embodiment, defines the structural representation of metal silicide;
Fig. 4 is after adopting the cleaning procedure of the contact groove of the application's preferred embodiment to carry out surface treatment to silicon face in rear metal silicide technology, the metal silicide of formation and the scanning electron microscope (SEM) photograph of corresponding active area and contact layer;
Fig. 5 is the schematic flow sheet of the formation method of the contact layer of the application's preferred embodiment;
When Fig. 6 A is the formation method of the contact layer adopting the application's preferred embodiment in rear grid technique, the structural representation that contact trench etch is complete;
When Fig. 6 B is the formation method of the contact layer adopting the application's preferred embodiment in rear grid technique, the structural representation after contact groove cleans;
When Fig. 6 C is the formation method of the contact layer adopting the application's preferred embodiment in rear grid technique, form metal silicide and structural representation after plated metal plug material.
Embodiment
Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
Introducing as background technology, there is the technical problem of the semiconductor components and devices electric property attenuating that the cleaning procedure because contacting groove causes in prior art.For solving this technical problem, the application provides a kind of cleaning procedure contacting groove, comprises the steps: step S1, adopts SC1 cleaning fluid to clean the lower surface of contact groove, removes the particle of this lower surface; Step S2, after step S1, adopts ozonated deionized water (DIW) this lower surface clean, is oxidized this lower surface and forms oxide in this lower surface to make this lower surface smooth-out; Step S3, after step S2, adopts the pre-clear technique of SiCoNi to clean this lower surface, removes the oxide formed in step s 2.
Due to the lower surface adopting SC1 cleaning fluid to clean contact groove, remove the particle of this lower surface, and adopt ozonated deionized water to clean this lower surface, being oxidized this lower surface and forming oxide in this lower surface makes this lower surface smooth-out, this lower surface is cleaned again by the pre-clear technique of SiCoNi, the oxide formed in cleaning course before removing, exposure level between metal silicide between the metal closures of contact layer and silicon face and silicon face can be improved, thus minimizing contact resistance, improve the electric property of semiconductor components and devices.In addition, adopt in the rear grid technique of above cleaning procedure replacement the conventional cleaning process that DHF cleaning procedure when forming contact layer and the pre-clear process integration of SiCoNi use, the critical size of the metal closures of contact layer can be improved, thus improve the electric property of semiconductor components and devices.
Wherein, the formula of SC1 cleaning fluid is NH
4oH:H
2o
2: H
2o.Due to H
2o
2effect, silicon chip surface has one deck natural oxide film SiO
2, in hydrophily, can be soaked into by cleaning fluid between silicon chip surface and particle.Because the natural oxidizing layer of silicon chip surface and the Si of silicon chip surface are by NH
4oH corrodes, and the particle being therefore attached to silicon chip surface just falls into cleaning fluid, thus reaches the object removing particle.At NH
4while OH corrosion of silicon surface, H
2o
2new oxide-film is formed again on oxidized silicon chip surface.Therefore, SC1 cleaning fluid carrys out undercutting with oxidation and microetch and removes surface particles, also can remove slight organic pollution and partially metallised pollutant.Preferably, in above step S1, in SC1 cleaning fluid, the volume ratio of each composition is preferably NH
4oH:H
2o
2: H
2o=1:1 ~ 4:50 ~ 200, the volume ratio of each composition is more preferably NH
4oH:H
2o
2: H
2o=1:2 ~ 3:100 ~ 150, the cleaning temperature of employing is preferably room temperature 23 DEG C to 25 DEG C, and the time that cleaning continues is preferably 30s to 120s.Select the advantage of above parameter area to be both to remove particle and metallic pollution, oppose side wall erosion amount is few again.In step s 2, ozonated deionized water can form silica by silicon oxide surface.Wherein, O in ozonated deionized water
3concentration be preferably 10ppm to 80ppm, the temperature of employing is preferably room temperature 23 DEG C to 25 DEG C, cleaning continue time be preferably 30s to 120s.Select the advantage of above parameter area to be to remove organic contamination, also oxidable bottom silicon, the absorption to impurity can be prevented again.The raw material of the pre-clear technique of SiCoNi is NF
3and NH
3.The pre-clear technique of SiCoNi provides a kind of low intensive chemical etching method and removes oxide-film, has extraordinary selectivity, reduce the loss of silicon base and the change of profile for silica erosion.In step s3 preferably, the removal quantity contacting the oxide of the lower surface of groove is
what provide in above step S1 and step S2 is preferable temperature, but the present invention does not get rid of and suitably relaxes temperature range in some cases.
Fig. 3 A to Fig. 3 D shows the cleaning procedure schematic flow sheet of the contact groove of the application's preferred embodiment.Wherein, Fig. 3 A is in the cleaning procedure of contact groove of the application's preferred embodiment, adopts the structural representation that SC1 cleaning fluid cleans contact groove; Fig. 3 B is in the cleaning procedure of contact groove of the application's preferred embodiment, adopts the structural representation that ozonated deionized water cleans contact groove; Fig. 3 C is in the cleaning procedure of contact groove of the application's preferred embodiment, adopts the structural representation that the pre-clear technique of SiCoNi cleans contact groove; Fig. 3 D, after the cleaning procedure of the contact groove adopting the application's preferred embodiment cleans contact groove, defines the structural representation of metal silicide.In Fig. 3 A to Fig. 3 D, each label represents respectively: 1 is silicon substrate, and 2 is STI, and 3 is doped region (as N+ district or P+ district), 4 is high-K metal gate, and 5 is SiN layer, and 6 is ILD layer, 9 is metal silicide, and 12 is the oxide of silicon substrate material, 19 representative contact grooves.
After Fig. 4 shows and adopts the cleaning procedure of the contact groove of the application's preferred embodiment to carry out surface treatment to silicon face in rear metal silicide technology, the metal silicide of formation and the scanning electron microscope (SEM) photograph of corresponding active area and contact layer.As shown in Figure 4, wherein, metal silicide 20 (as NiPtSi metal silicide) is arranged between the silicon face of active area 10 and the metal closures 30 of contact layer, owing to adopting the SC1 cleaning fluid in the application before forming metal silicide 20, ozonated deionized water carries out surface treatment with the pre-clear technique of SiCoNi to the lower surface contacting groove, therefore, connecting portion between the silicon face of metal silicide 20 and active area 10 is smoother, thus the reduction for the prior art corresponding to Fig. 1 of the contact resistance between metal silicide 20 and active area 10, the electric property of corresponding semiconductor components and devices is improved.
The application also provides a kind of formation method of contact layer, and the formation method of this contact layer comprises the steps: step S20, carries out etching form contact groove to inter-level dielectric; Step S40, the cleaning procedure adopting the pre-clear process integration of aforesaid SC1 cleaning fluid, ozonated deionized water and SiCoNi to clean after step S20 cleans the surface contacting groove; Step S60, after step S40, the lower surface of contact groove deposits the first metal and forms metal silicide; Step S80, deposits the second metal and forms contact layer after step S60 in contact groove.
Fig. 5 is the schematic flow sheet of the formation method of the contact layer of the application's preferred embodiment.As shown in Figure 5, in the preferred embodiment:
First carry out step S10, CMP is carried out to inter-level dielectric.
After step 10, carry out step S20, step 20 comprises the techniques such as photoresist coating, exposure, photoetching and forms contact groove to inter-level dielectric etching.
The cleaning procedure that have employed aforementioned contact groove in cleaning procedure adopted in step s 40 successively cleans contact groove, and therefore, step S40 specifically comprises aforesaid step S1, S2 and S3.
Step S60 comprises: sub-step 62, and the lower surface of contact groove deposits the first metal; Sub-step 64, carries out thermal annealing, forms metal silicide; Sub-step 66, removes unreacted first metal.
In this preferred embodiment, in sub-step 62, the first metal of deposition is NiPt, and wherein the ratio of Pt is preferably 5% ~ 10% mass percent.Certainly, the present invention is not limited thereto, the first metal also other can form the metal of the metal silicide of conduction for W etc.
Sub-step S64 preferably includes: S641 step by step, first carries out a thermal annealing (firstRTA) to generate Ni
2ptSi; S643 step by step, carries out second heat annealing (secondRTA) to generate NiPtSi metal silicide after S641 step by step.Now, sub-step S66 is at S641 step by step with carry out between S643 step by step.
Wherein, the thermal annealing carried out in S641 is step by step Low Temperature Thermal annealing, and temperature range is preferably 230 DEG C to 300 DEG C, is more preferably about 250 DEG C; Annealing time is preferably 20 to 40s, is more preferably about 30s.The second heat annealing carried out in S643 step by step can be high-temperature thermal annealing, and temperature range, for being preferably 450 DEG C to 600 DEG C, is more preferably about 550 DEG C; Annealing time is preferably 20s to 40s, is more preferably about 30s.Or the annealing of this second heat can be laser annealing, and the temperature of laser annealing is preferably 800 DEG C to 900 DEG C, is more preferably about 850 DEG C.Laser annealing can realize second heat annealing process instantaneously compared with high-temperature thermal annealing, and annealing time greatly reduces.
In addition, in sub-step S66 at the temperature of 120 DEG C to 150 DEG C, the mixture (SPM) of sulfuric acid and hydrogen peroxide is adopted to carry out wet method stripping to the first metal.SPM has very high oxidability, can be dissolved in after burning in cleaning fluid, and oxidation operation can be generated CO
2and H
2o.Heavy organic contaminant and the part metals of silicon chip surface can be removed with SPM cleaning silicon chip.
Second metal is W in the present embodiment.Certainly, the second metal can for being suitable for other metal of the material as contact layer, as silver.
The structural representation of the main flow node of formation contact layer when Fig. 6 A to Fig. 6 C is the formation method of the contact layer adopting the application's preferred embodiment in rear grid technique.Wherein: when Fig. 6 A is the formation method of the contact layer adopting the application's preferred embodiment in rear grid technique, the structural representation that contact trench etch is complete, the structural representation namely in Fig. 5 after step S20 enforcement; When Fig. 6 B is the formation method of the contact layer adopting the application's preferred embodiment in rear grid technique, the structural representation after contact groove cleans, the structural representation namely in Fig. 5 after step S40 enforcement; When Fig. 6 C is the formation method of the contact layer adopting the application's preferred embodiment in rear grid technique, form metal silicide (such as NiPtSi) and structural representation after plated metal plug material (such as W), namely in Fig. 5 step S60 and S80 implement after structural representation.
In Fig. 6 A to Fig. 6 C, each label represents respectively: 1 is silicon substrate, and 2 is STI, and 3 is doped region, 4 is high-K metal gate, and 5 is SiN layer, and 6 for forming ILD layer, and 7 is coarse silicon face, 8 is smooth silicon face, and 9 is metal silicide, and 11 is the metal closures of contact layer, 19 representative contact grooves.
As shown in Fig. 6 A to Fig. 6 C, owing to adopting aforesaid SC1 cleaning fluid, the cleaning procedure that ozonated deionized water cleans with the pre-clear process integration of SiCoNi cleans contacting groove, use SC1 cleaning fluid, ozonated deionized water instead of DHF cleaning fluid of the prior art, thus decrease the removal total amount of ILD wall films, therefore, the critical size improving the metal closures of the contact groove caused because of the etching of HF to oxide in DHF cleaning fluid in prior art becomes large, and the phenomenon that the metal closures of contact layer shortens, the critical size of metal closures is made more to meet designing requirement, thus be conducive to improving semiconductor components and devices, especially live width is the electric property of the semiconductor components and devices of below 20nm.
Below with reference to embodiment and comparative example, further illustrate the beneficial effect of the application.
Embodiment 1
Etching is carried out to inter-level dielectric and forms contact groove; The cleaning procedure adopting the pre-clear process integration of SC1 cleaning fluid, ozonated deionized water and SiCoNi to clean cleans the surface contacting groove according to the operating condition of embodiment in table 11; The lower surface of contact groove after the cleaning deposits NiPt as the first metal, and thermal annealing formation metal silicide is carried out to the first metal; In contact groove and metal silicide deposits W and form contact layer as the second metal.In embodiment 1, a thermal annealing is Low Temperature Thermal annealing, and second heat is annealed into high-temperature thermal annealing.
Embodiment 2
Identical with embodiment 1 step, the operation of the cleaning process of SC1 and the cleaning process of ozonated deionized water is implemented according to the parameter of embodiment in table 12.In embodiment 2, a thermal annealing is Low Temperature Thermal annealing, and second heat is annealed into high-temperature thermal annealing.
Embodiment 3
Identical with embodiment 1 step, the operation of the cleaning process of SC1 and the cleaning process of ozonated deionized water is implemented according to the parameter of embodiment in table 13.In embodiment 3, a thermal annealing is Low Temperature Thermal annealing, and second heat is annealed into laser annealing.
Embodiment 4
Identical with embodiment 1 step, the operation of the cleaning process of SC1 and the cleaning process of ozonated deionized water is implemented according to the parameter of embodiment in table 14.In embodiment 4, a thermal annealing is Low Temperature Thermal annealing, and second heat is annealed into laser annealing.
Embodiment 5
Identical with embodiment 1 step, the operation of the cleaning process of SC1 and the cleaning process of ozonated deionized water is implemented according to the parameter of embodiment in table 15.In embodiment 5, a thermal annealing is Low Temperature Thermal annealing, and second heat is annealed into laser annealing.
Comparative example 1
Adopt the DHF cleaning procedure of prior art and the pre-clear process integration of SiCoNi to cleaning enforcement contact groove and clean.
Table 1
Contrast known through each embodiment 1 to 5 with comparative example 1, in embodiment 1 to 5, (effect of embodiment 1 is shown in Fig. 4, the effect of embodiment 2 to 5 and embodiment 1 is similar to) middle smooth between metal silicide and silicon face, the longitudinal cross-section above-below direction change of the metal closures of contact layer is less.And (effect is shown in Fig. 1) is uneven between metal silicide and silicon face in comparative example 1, the longitudinal cross-section of the metal closures of contact layer is up big and down small.As can be seen here, adopt the cleaning procedure of the application that contact bottom surface can be made to become smooth, contribute to the structure improving metal silicide, make the critical size of the metal closures of contact layer more meet designing requirement, be conducive to the electric property improving semiconductor.
Known according to above description, the above embodiment tool of the application has the following advantages:
With the pre-clear process integration of SiCoNi, the surface contacting trench bottom is cleaned with ozonated deionized water by SC1 cleaning fluid, this surface is made to become smooth, contribute to the structure improving metal silicide, improve the contact resistance of metal silicide and silicon face, thus improve the electric property of corresponding semiconductor components and parts.
In rear grid technique, metal suicide structure before the metal closures of contact layer is formed adopts the aforementioned cleaning procedure of the application not only to make the lower surface of contact groove smooth when being formed, and the critical size of contact layer metal closures can be improved, improve the electric property of corresponding semiconductor components and parts.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (14)
1. contact a cleaning procedure for groove, it is characterized in that, described cleaning procedure comprises the steps:
Step S1: adopt SC1 cleaning fluid to clean the lower surface of described contact groove, remove the particle of described lower surface;
Step S2: after described step S1, adopts ozonated deionized water to clean described lower surface, is oxidized described lower surface and forms oxide in described lower surface to make described lower surface smooth-out;
Step S3: after described step S2, adopts the pre-clear technique of SiCoNi to clean described lower surface, removes the described oxide formed in described step S2.
2. cleaning procedure according to claim 1, is characterized in that, in described step S1, in described SC1 cleaning fluid, the volume ratio of each composition is NH
4oH:H
2o
2: H
2o=1:1 ~ 4:50 ~ 200.
3. cleaning procedure according to claim 1, is characterized in that, in described step S1, the cleaning temperature of employing is room temperature 23 DEG C to 25 DEG C.
4. cleaning procedure according to claim 1, is characterized in that, in described step S1, the time that cleaning continues is 30s to 120s.
5. cleaning procedure according to claim 1, is characterized in that, in described step S2, and O in described ozonated deionized water
3concentration be 10ppm to 80ppm.
6. cleaning procedure according to claim 1, is characterized in that, in described step S2, the cleaning temperature of employing is room temperature 23 DEG C to 25 DEG C.
7. cleaning procedure according to claim 1, is characterized in that, in described step S2, the time that cleaning continues is 30s to 120s.
8. cleaning procedure according to claim 1, is characterized in that, in described step S3, the removal quantity of described oxide is
9. a formation method for contact layer, is characterized in that, described formation method comprises the steps:
Step S20: etch to form contact groove to inter-level dielectric;
Step S40: after described step S20, adopts the lower surface of cleaning procedure to described contact groove contacting groove according to any one of claim 1 to 8 to clean;
Step S60: after described step S40, the lower surface of described contact groove deposits the first metal and forms metal silicide;
Step S80: after described step S60, deposits the second metal to form contact layer in described contact groove.
10. formation method according to claim 9, is characterized in that, described step S60 comprises:
Sub-step S62: deposit described first metal in the lower surface of described contact groove;
Sub-step S64: carry out thermal annealing, forms metal silicide;
Sub-step S66: remove unreacted described first metal.
11. formation methods according to claim 9, is characterized in that, described first metal is NiPt or W.
12. formation methods according to claim 9, is characterized in that,
Described first metal deposited in described sub-step S62 is NiPt;
Described sub-step S64 comprises: S641 step by step, carries out a thermal annealing to generate Ni
2ptSi; S643 step by step, carries out second heat annealing to generate NiPtSi metal silicide after described S641 step by step;
Described sub-step S66 is at described S641 step by step and describedly carry out between S643 step by step.
13. formation methods according to claim 12, is characterized in that,
A described thermal annealing is Low Temperature Thermal annealing, and the temperature of Low Temperature Thermal annealing is 230 DEG C to 300 DEG C, and annealing time is 20s to 40s;
Described second heat is annealed into high-temperature thermal annealing, and the temperature of high-temperature thermal annealing is 450 DEG C to 600 DEG C, and annealing time is 20s to 40s, or the annealing of described second heat adopts laser annealing, and the temperature of laser annealing is 800 DEG C to 900 DEG C.
14. formation methods according to claim 10, is characterized in that, in described sub-step S66, adopt the mixture of sulfuric acid and hydrogen peroxide to carry out wet method stripping to described first metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410415548.2A CN105448652B (en) | 2014-08-21 | 2014-08-21 | The cleaning procedure of contact groove and the forming method of contact layer |
Applications Claiming Priority (1)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030001782A (en) * | 2001-06-28 | 2003-01-08 | 주식회사 하이닉스반도체 | method for cleaning of semiconductor device |
| CN102148191A (en) * | 2010-02-10 | 2011-08-10 | 上海宏力半导体制造有限公司 | Formation method for contact hole |
| CN103730433A (en) * | 2012-10-16 | 2014-04-16 | 中芯国际集成电路制造(上海)有限公司 | Electric conducting plug and forming method of electric conducting plug |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030001782A (en) * | 2001-06-28 | 2003-01-08 | 주식회사 하이닉스반도체 | method for cleaning of semiconductor device |
| CN102148191A (en) * | 2010-02-10 | 2011-08-10 | 上海宏力半导体制造有限公司 | Formation method for contact hole |
| CN103730433A (en) * | 2012-10-16 | 2014-04-16 | 中芯国际集成电路制造(上海)有限公司 | Electric conducting plug and forming method of electric conducting plug |
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