WO2002080355A1 - Amplificateur haute frequence - Google Patents

Amplificateur haute frequence Download PDF

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Publication number
WO2002080355A1
WO2002080355A1 PCT/JP2002/002393 JP0202393W WO02080355A1 WO 2002080355 A1 WO2002080355 A1 WO 2002080355A1 JP 0202393 W JP0202393 W JP 0202393W WO 02080355 A1 WO02080355 A1 WO 02080355A1
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Prior art keywords
terminal
transistor
grounded
base
transmission line
Prior art date
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PCT/JP2002/002393
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English (en)
Japanese (ja)
Inventor
Hiroki Tanaka
Eiji Suematsu
Original Assignee
Sharp Kabushiki Kaisha
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Publication of WO2002080355A1 publication Critical patent/WO2002080355A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's

Definitions

  • the present invention relates to a high-frequency amplifier for amplifying a signal in a microwave band (including a millimeter wave band) such as a grounded base amplifier and a cascode amplifier.
  • a base-grounded amplifier using a bipolar transistor there is a base-grounded amplifier using a bipolar transistor.
  • the base terminal of the NPN transistor 214 is grounded, the input terminal 211 is connected to the emitter terminal via the input matching circuit 213, and the output terminal is connected to the collector terminal via the output matching circuit 215.
  • the transistor is operated by applying a negative voltage to the emitter terminal to ground the base terminal.
  • Another high-frequency amplifier is a cascode amplifier in which the base terminal of a transistor is AC grounded.
  • the collector terminal (or drain terminal) of the first transistor whose emitter terminal (or source terminal) is grounded, and the base terminal (or gate terminal) are connected to a metal insulator metal (MIM).
  • the first transistor has a collector terminal (or a drain terminal) and a second transistor, and has an emitter terminal and a source terminal of the second transistor which are AC grounded by a capacitor or the like.
  • the emitter terminal (or source terminal) is connected DC through an interstage circuit.
  • the cascaded amplifier with the above configuration can provide the gain of a two-stage amplifier with a chip area of almost one stage amplifier, and has excellent high-frequency characteristics. Therefore, high-frequency amplification in the millimeter wave band (30 to 300 GHz) Applied to vessels.
  • Fig. 7 shows a coplanar HEMT (High Electron Mobility Transistor) described in IEE MI CROWAVE AND GUIDED WAVE LETTERS (VOL.8, No. 12, DECEMBER 1998).
  • Mobility transistor> MM IC (Monolithic Microwave Integrated Circuit) is an equivalent circuit diagram of a cascode amplifier. As shown in Fig. 7, the input terminal 311 is connected to the gate terminal and the source terminal is connected to the first transistor 313 connected to the ground, and is transmitted to the drain terminal of the first transistor 313.
  • a second transistor 3 15 whose source terminal is connected via an inter-stage circuit 3 14 composed of a line and a base terminal is connected to a bias terminal 3 17, and the second transistor 3 15 mentioned above and the ground And a MIM capacitor 316 connected between the two.
  • the output terminal 3 12 is connected to the drain terminal of the second transistor 3 15.
  • the drain terminal of the first transistor 3 13 and the source terminal of the second transistor 3 15 are DC-connected via the interstage circuit 3 14, and the second transistor 3 1 Gate terminal 5 is AC grounded by MIM capacitor 316.
  • the MM IC substrate on which the cascode amplifier is formed is mounted on a ceramic substrate.
  • the parasitic element of the inductance component of the bonding wire and the like poses a problem, and the connection between the ground on the MM IC substrate surface and the ground on the ceramic substrate leads to stable grounding. Have difficulty. Therefore, it is preferable to configure the MMIC using a microstrip line whose back surface is the ground.
  • the grounded base amplifier is formed on the MM IC substrate by a microstrip line
  • the land is on the back surface of the MM IC substrate
  • a via hole reaching the back surface of the compound semiconductor substrate is provided near the terminal of the transistor to be grounded.
  • DC and AC grounding is required.
  • the cascode amplifier is formed on the MM IC substrate by a microstrip line
  • the DC and AC grounds of the emitter terminal of the first transistor are provided on the back surface of the MM IC substrate via via holes. This is done by connecting to the land metal, and the base terminal of the second transistor is connected to the MIM capacitor and via It must be provided and grounded alternately.
  • Fig. 8 shows a circuit diagram of a grounded-base amplifier.
  • the emitter terminal of an NPN transistor 415 is connected to the input terminal 411 via the input matching circuit 413, and the transistor 415 is connected to the input terminal 411.
  • the collector terminal is connected to the output terminal 4 12 via the output matching circuit 4 17.
  • the base terminal of the transistor 415 is connected to the ground via a via hole 416.
  • the via hole 416 has a parasitic inductance L4.
  • FIG. 9 shows a circuit diagram of a cascode amplifier, in which the input terminal 511 is connected to the gate terminal of the first transistor 513, and the source terminal of the first transistor 513 is connected to the via hole. The ground is connected via 5 14. The source terminal of the second transistor 516 is connected to the drain terminal of the first transistor 513 via an interstage circuit 515 composed of a transmission line.
  • the ground terminal is connected to the gate terminal of the transistor 516 via the MIM capacitor 517 and the via hole 518, and the ground terminal of the second transistor 516 is connected to the ground terminal.
  • the output terminal 5 12 is connected to the drain terminal of the second transistor 5 16.
  • the base terminal of the grounded-base amplifier cannot be sufficiently grounded in an AC manner due to the influence of the inductance component of the via hole, and the characteristics of the high-frequency amplifier deteriorate.
  • the source terminal of the first transistor of the cascode amplifier cannot be sufficiently grounded in an AC manner due to the influence of the inductance component of the via hole and the like. Characteristics are degraded.
  • Fig. 10 shows the MSG (Maximum Stable Gain) and the stabilization coefficient K (Fig. 10: “K”) at an operating frequency of 6 OGHz when inductance is added to the ground terminal of the emitter-grounded transistor and the base-grounded transistor. factor ").
  • the horizontal axis represents the ground connection inductance
  • the vertical axis represents MSG and stabilization coefficient K.
  • the ground-based amplifier has a large decrease in gain when the ground terminal of the transistor is not sufficiently AC-grounded, as compared to the emitter-grounded amplifier.
  • the base terminal of the second transistor of the cascode amplifier is also affected by the characteristics of the ⁇ ⁇ ⁇ capacitor, and it is not possible to perform sufficient AC grounding, so the gain of the high-frequency amplifier decreases. .
  • the influence of the via hole parasitic component described above is large, and the characteristics of the ⁇ ⁇ ⁇ ⁇ capacitor deviate from the ideal capacitor characteristics. It is difficult to obtain.
  • a via hole is provided near the source terminal of the first transistor, and a capacitor and a via hole are provided near the gate terminal of the second transistor, and these are connected.
  • a step of opening a via hole is performed near the base terminal of the base-grounded transistor or near the source terminal of the first transistor of the cascode amplifier, or near the gate terminal of the second transistor of the cascode amplifier.
  • a step of forming a MI ⁇ capacitor, a step of forming a via hole, and a step of connecting a MI ⁇ capacitor and a via hole must be performed.
  • an object of the present invention is to connect a via hole sufficiently away from a terminal to be grounded without connecting a capacitor to a terminal to be grounded of the transistor, and to connect the terminal to be grounded of the transistor in a DC manner.
  • An object of the present invention is to provide a high-frequency amplifier with a high yield that can be grounded in an AC manner and a high frequency characteristic.
  • a high-frequency amplifier according to the present invention comprises: And a means for performing the operation.
  • the terminal of the transistor can be DC and AC grounded without connecting a capacitor to the terminal to be grounded or the terminal to be connected to the bias terminal.
  • the means for AC grounding is a transmission line with an open end
  • the transistor is a transistor whose base terminal or gate terminal is to be grounded.
  • At least one via hole for connecting a ground conductor to the base terminal or the gate terminal is provided, and one end of the at least one open-ended transmission line is connected to the base terminal or the gate terminal of the transistor.
  • the base terminal of the transistor and the ground conductor are connected by at least one via hole, so that the base terminal is connected to a direct current. Ground.
  • the AC grounding of the base terminal can be improved. It is possible to do. Therefore, a capacitor for grounding the base terminal of the above transistor in an AC manner is connected.
  • a via hole that connects the above terminal to the ground conductor can be provided sufficiently far from the terminal without providing it, and the base terminal of the transistor can be easily grounded DC and AC with a high yield.
  • a high-frequency amplifier with excellent high-frequency characteristics can be realized. Note that the same applies to the case where a grounded-gate amplifier is configured using a field-effect transistor.
  • the means for AC grounding is a transmission line with an open end
  • the transistor is a transistor whose emitter terminal or source terminal is to be grounded, and the emitter terminal of the transistor is Alternatively, an input circuit for connecting a ground conductor to the source terminal, and a bias supply wiring having one end connected to the base terminal or the gate terminal of the transistor, wherein at least one of the open ends is connected to the base terminal or the gate terminal of the transistor.
  • One end of the transmission line is connected.
  • the emitter terminal of the transistor is DC-grounded via the input circuit, and at least one of the base terminal of the transistor is connected to the base terminal of the transistor.
  • AC grounding of the base terminal can be performed well.
  • the length of the transmission line having the open end it is possible to compensate for the inductance component of the base electrode and the base lead-out wiring inside the transistor and to add feedback. Can be stabilized.
  • a via hole for connecting the emitter terminal of the transistor to the ground conductor can be provided at a place sufficiently distant from the terminal, and a capacitor and a via hole for AC grounding of the base terminal are provided near the element.
  • the high-frequency amplifier includes a first transistor having an emitter terminal or a source terminal grounded, an interstage circuit having one end connected to a collector terminal or a drain terminal of the first transistor, Connect the emitter terminal to the other end of the Or a second transistor to which a source terminal is connected, and a bias supply line having one end connected to a base terminal or a gut terminal of the second transistor and the other end connected to the bias terminal.
  • the base terminal or the good terminal of the second transistor is AC grounded by the AC grounding means.
  • the emitter terminal of the second transistor is connected to the emitter terminal of the second transistor via the interstage circuit, the base terminal of the second transistor is connected to one end of a bias supply line, and the base terminal of the second transistor is connected to the base terminal of the second transistor.
  • Grounding in alternating current In this cascode amplifier, by providing means for grounding the base terminal of the second transistor in an alternating manner, it is possible to favorably ground the base terminal of the second transistor in an alternating manner. Note that the same applies to the case where a cascode amplifier is configured using a field effect transistor. Further, the high-frequency amplifier of one embodiment is characterized in that the AC grounding means includes at least one open-ended transmission line.
  • the high-frequency amplifier of the embodiment it is possible to easily apply feedback to the amplifier by adjusting the length of the open transmission line provided at the base terminal (or gate terminal) of the second transistor. Becomes
  • the high-frequency amplifier of one embodiment is characterized in that at least one open-ended transmission line having one end connected to the emitter terminal or the source terminal of the first transistor is provided.
  • the open-ended transmission line provided at the emitter terminal (source terminal) of the first transistor is made capacitive at the operating frequency, so that the inside of the first transistor is Emitter electrode (or source electrode) It is possible to compensate for the parasitic inductance component of the emitter line (or source line), improve the gain, and stabilize the operation.
  • at least one of the open-ended transmission lines has an electrical length of approximately 1 Z4 wavelength at an operating frequency. It is characterized by having.
  • the base-grounded amplifier in which the base terminal of the transistor is connected to the ground conductor through the via hole is provided.
  • the base terminal may be affected by parasitic elements such as inductance at the operating frequency. Therefore, better grounding can be obtained as compared with the case where grounding is performed using a MIM capacitor and a via hole.
  • the cascade circuit includes a collector terminal of the first transistor whose emitter terminal is grounded and an emitter terminal of the second transistor connected via an interstage circuit.
  • the electrical length of the open-ended transmission line connected to the base terminal of the second transistor functioning as the base-grounded transistor, which is to be grounded at high frequency is set to be approximately 1/4 wavelength at the operating frequency.
  • the base terminal is not affected by parasitic elements such as inductance at the operating frequency, and a better grounding can be obtained as compared with the case where the grounding is performed using a MIM capacitor and a via hole.
  • the electrical length of the open-ended transmission line connected to the emitter terminal of the first transistor of the cascode amplifier to be approximately 14 wavelengths at the operating frequency, the emitter terminal can be operated at a high frequency at the operating frequency.
  • FIG. 1 is a circuit diagram of a grounded-base amplifier as a high-frequency amplifier according to a first embodiment of the present invention.
  • FIG. 2 is a diagram showing a change in characteristics with respect to the ground connection inductance in the above-described grounded-base amplifier.
  • FIG. 3 is a diagram comparing the characteristics of the above-mentioned common base amplifier with those of the conventional common base amplifier.
  • FIG. 4 is a circuit diagram of a grounded-base amplifier as a high-frequency amplifier according to a second embodiment of the present invention.
  • FIG. 5 is a circuit diagram of a cascode amplifier as a high-frequency amplifier according to a third embodiment of the present invention.
  • FIG. 6 is a circuit diagram of a conventional grounded base amplifier.
  • FIG. 7 is a circuit diagram of a conventional cascode amplifier.
  • FIG. 8 is a circuit diagram of a conventional grounded base amplifier.
  • FIG. 9 is a circuit diagram of the conventional cascode amplifier.
  • FIG. 10 is a diagram comparing changes in characteristics with respect to ground inductance in a common-emitter amplifier and a common-base amplifier.
  • FIG. 11 is a circuit diagram of a cascode amplifier as a high-frequency amplifier according to a fourth embodiment of the present invention.
  • FIG. 1 is a circuit diagram of a grounded-base amplifier as a high-frequency amplifier according to an embodiment of the present invention.
  • the emitter terminal of NPN transistor 14 is connected to input terminal 11 via input matching circuit 13 and the output terminal is connected to collector terminal of transistor 14 via output matching circuit 18.
  • Terminals 1 and 2 are connected.
  • One end of the transmission line 15 is connected to the base terminal of the transistor 14, and the ground is connected to the other end of the transmission line 15 via the via hole 16.
  • one end of the open transmission line 17 is connected to the base terminal of the transistor 14.
  • the open-ended transmission line 17 is a microstrip line having an electrical length of approximately 1Z4 wavelength at the operating frequency.
  • a parasitic inductance L 1 which is a main parasitic element of the via hole 16, is connected between the base terminal of the transistor 14 and the ground.
  • the base terminal of the transistor 14 is DC-grounded by the via hole 16 and the open terminal of the microstrip line having an electrical length of approximately 1 Z4 wavelength at the operating frequency is connected to the base terminal of the transistor 14. 7, the base terminal is AC grounded at the operating frequency.
  • Fig. 2 shows the grounded-base amplifier shown in Fig. 1, in which one end of an open-ended transmission line with an electrical length of 1Z4 wavelength at an operating frequency of 60 GHz is connected to the base terminal of transistor 14; It shows the change of the MSG and the stabilization coefficient K at 60 GHz with respect to the ground connection inductance of the via hole 16 connected to the base terminal.
  • Fig. 3 shows the characteristics when the grounded base amplifier shown in Fig. 1 is formed as an MM IC on a compound semiconductor substrate (S11 is input return loss, S22 is output return loss, and S21 is U). Is shown.
  • the base terminal of the transistor 14 is equivalently grounded by the open-ended transmission line 17 near the operating frequency of 60 GHz, so that the open-ended transmission terminal is connected to the base terminal. The gain was improved by 3 dB compared to the case where the line 17 was not provided.
  • the via hole 16 is provided by being drawn out by the transmission line 15, it is not necessary to provide a via hole near the base terminal 14B of the transistor, and the yield can be improved.
  • the length of the open-ended transmission line 17 so that the open-ended transmission line 17 composed of the microstrip line becomes capacitive at the operating frequency, a grounded base amplifier can be obtained. Feedback can be added to stabilize the operation.
  • the grounded base amplifier of the present invention by adjusting the length of the open transmission line 17 connected to the base terminal 14 B of the transistor 14, the amount of feedback can be easily adjusted, and the MIM can be easily adjusted. Since no capacitors are used, there is no effect of parasitic components and the reproducibility is excellent.
  • one transmission line 17 having an electrical length of approximately 1 wavelength at the operating frequency is provided at the base terminal 14 B of the transistor 14, but more preferably two transmission lines are provided. Be sure to connect the ground with an open transmission line Ground terminal can be grounded.
  • the emitter terminal is replaced with a source terminal
  • the base terminal is replaced with a gate terminal
  • the collector terminal is replaced with a drain terminal. Similar effects can be obtained when a single-grounded amplifier is configured.
  • FIG. 4 is a circuit diagram of a grounded-base amplifier as a high-frequency amplifier according to a second embodiment of the present invention.
  • an emitter terminal of an NPN transistor 26 is connected to an input terminal 21 via a transmission line 25 made of a microstrip line.
  • One end of a transmission line 23 composed of a microstrip line is connected to the input terminal 21, and the other end of the transmission line 23 is connected to ground via a via hole 24.
  • the output terminal 22 is connected to the collector terminal of the transistor 26 via the output matching circuit 36.
  • one end of an open-ended transmission line 27 composed of a microstrip line is connected to the base terminal 26 B of the transistor 26, and the transmission line 28 is connected to the base terminal 26 B of the transistor 26.
  • Resistor 29, transmission line 30 and via hole 31 are connected to ground.
  • a bias terminal 35 is connected to a base terminal 26 B of the transistor 26 via a transmission line 32, a resistor 33 and a bias supply wiring 34.
  • the transmission line 23, via hole 24, and transmission line 25 constitute an input matching circuit, and the transmission line 23, via hole 24 connects between one end of the input terminal 21 side of the transmission line 25 and ground. By connecting, the emitter terminal of transistor 26 is DC grounded.
  • the via holes 24 and 31 have parasitic inductances L21 and L22, which are main parasitic elements, respectively.
  • the electrical length of the transmission line 27 having the open end is set to approximately 1/4 wavelength at the operating frequency.
  • the emitter terminal of the transistor 26 is DC grounded via the via hole 24 provided at one end of the transmission line 23 constituting the input matching circuit.
  • transistor 2 6 is grounded by the open transmission line 27 provided at the base terminal 26 B.
  • the open-ended transmission line 27 consisting of the microstrip line described above has a value of 5 ph to 30 ph because the inductance of the base electrode and the base lead wire inside the base grounded transistor 26 is 5 ph to 30 ph. In order to compensate for this, it is more preferable that the electrical length of the transmission line 27 is set to be not less than 15 wavelengths and not more than 1/4 wavelength at the operating frequency.
  • the field effect transistor is used by replacing the emitter terminal with the source terminal, replacing the base terminal with the gate terminal, and replacing the collector terminal with the drain terminal.
  • the same effect can be obtained when a common-gate amplifier is configured.
  • FIG. 5 is a circuit diagram of a cascode amplifier as a high-frequency amplifier according to a third embodiment of the present invention.
  • the base terminal of the NPN-type first transistor 44 is connected to the input terminal 41 via the input matching circuit 43, and the emitter terminal 44E of the first transistor 44 is connected to One end of an open-ended transmission line 45 composed of a microstrip line is connected. Further, the ground is connected to the emitter terminal 44 E of the first transistor 44 via the via hole 46.
  • the emitter terminal of an NPN-type second transistor 48 is connected to the collector terminal of the first transistor 44 via an interstage circuit 47 composed of a microstrip line.
  • One end of an open-ended transmission line 49 made of a microstrip line is connected to the base terminal 48 B of the second transistor 48, and a bias is supplied to the base terminal 48 B of the second transistor 48.
  • the bias terminal 51 is connected via the wiring 50.
  • the output terminal 42 is connected to the collector terminal of the second transistor 48 via the output matching circuit 52.
  • the via hole 46 has a parasitic inductance L3, which is a main parasitic element.
  • the electrical length of the transmission lines 45 and 49 is approximately 1/4 wave at the operating frequency. I am long.
  • the base terminal 48 B of the second transistor 48 is connected to the bias terminal 50 in terms of DC, and at the operating frequency, the electrical length provided at the base terminal 48 B is
  • the second transistor 48 functions as a grounded-base transistor whose base terminal 48 B is grounded at its operating frequency because it is grounded by the open-ended transmission line 49 having approximately 1 Z 4 wavelengths.
  • the base terminal 48B of the second transistor 48 is grounded at a high frequency by the open transmission line 49 at the operating frequency, a MIM capacitor and a via hole are formed near the base terminal 48B. Since the influence of the parasitic element is smaller than when grounding is performed, good grounding is possible. Therefore, at the operating frequency, the gain of the high-frequency amplifier can be improved as compared with the case where it is grounded by the MIM capacitor and the via hole.
  • the emitter terminal 44 E of the first transistor 44 is grounded by a via hole 46 in terms of direct current, and the electrical length provided at the emitter terminal 44 E is substantially equal to the operating length at the operating frequency. It is grounded at a high frequency by a transmission line 4 5 with an open end that becomes 1/4 wavelength. In this manner, the via hole 46 for grounding the emitter terminal 44 E of the first transistor 44 can be provided at a location sufficiently distant from the transistor 44, and the yield is improved.
  • the emitter terminal 44 E of the first transistor 44 is AC grounded by the open-ended transmission line 45 composed of a microstrip line, so that the gain due to the parasitic inductance L 3 of the via hole 46 is obtained. Deterioration can be prevented.
  • the transmission line 45 with the open end has a value of 5 h to 30 ph because the inductance of the emitter electrode and the emitter lead wire inside the first transistor 44 is 5 h to 30 ph.
  • the electrical length of the open transmission line 4 5 It is more preferable that the operating frequency be 1/5 wavelength or more and 1/4 wavelength or less.
  • the base terminal 48 B of the second transistor 48 is connected to
  • One end of one open-ended transmission line 49 is connected, but by providing a plurality of open-ended transmission lines connected to the base terminal of the second transistor, the second transistor 48
  • the base terminal 48B of the power supply can be AC grounded.
  • a cascode amplifier is configured using a microstrip line having ground metal on the back of the MM IC substrate and the MM IC substrate is mounted on a ceramic substrate, the ground on the MM IC substrate surface and the land on the ceramic substrate Because it is possible to connect directly between them, excellent grounding at high frequencies is possible.
  • the emitter terminal is replaced with a source terminal
  • the base terminal is replaced with a gate terminal
  • the collector terminal is replaced with a drain terminal. Similar effects can be obtained when a scode amplifier is configured.
  • FIG. 11 is a circuit diagram of a cascode amplifier as a high-frequency amplifier according to a fourth embodiment of the present invention.
  • the input terminal 61 is connected to an NPN type
  • the base terminal of the first transistor 66 is connected, and the ground is connected to the emitter terminal 66 E of the first transistor 66 via a transmission line 73 a composed of a microstrip line and a viahorn 72 a. I have. Further, a ground is connected to an emitter terminal 66 E of the first transistor 66 via a transmission line 73 b composed of a microstrip line and a via hole 72 b.
  • the emitter terminal of an NPN-type second transistor 67 is connected to the collector terminal of the first transistor 66 via an interstage circuit 68 made of a microstrip line.
  • One ends of open-ended transmission lines 69 a and 69 b composed of microstrip lines having an operating frequency of approximately 1 Z4 wavelength are connected to the base terminal 67 B of the second transistor 67.
  • the ground is connected to the base terminal 67B of the second transistor 67 via the transmission line 70a composed of a microstrip line, the MIM capacitor 7la, and the via hole 72c.
  • one end of a transmission line 7 Ob composed of a microstrip line is connected to the base terminal 67B of the second transistor 67, and the bias terminal 63 is connected to the other end of the transmission line 70b.
  • the other end of the transmission line 70 is connected to ground via a MIM capacitor 71b and a via hole 72d.
  • the output terminal 62 is connected to the collector terminal of the second transistor 67 via the output matching circuit 65.
  • L61 to L64 represent parasitic inductances, which are the main parasitic elements of the via holes 72a, 72b, 72c, 72d formed on the compound semiconductor substrate, for example.
  • the emitter terminal 66E of the first transistor 66 is DC and AC grounded by two via holes 72a and 72b.
  • the collector terminal of the first transistor 66 is connected to the emitter terminal of the second transistor 67 in a DC manner via an interstage circuit 68.
  • the base terminal 67B of the second transistor 67 is DC-connected to the bias terminal 63, and at the operating frequency, the electrical length provided at the base terminal 67B is approximately 1Z4 wavelength.
  • the second transistor 67 Since the second transistor 67 is grounded by 69a and 69b, the second transistor 67 functions as a base-grounded transistor whose base terminal 67B is grounded at the operating frequency.
  • the base terminal 67B of the second transistor 67 is grounded at a high frequency by the two open-ended transmission lines 69a and 69b at the operating frequency.
  • the frequency range of grounding can be widened as compared with the case where the grounding is performed.
  • the two open transmission lines 69a and 69b can be arranged on both sides of the element, the layout is also easy.
  • the emitter terminal 66 E of the first transistor 66 is connected to the transmission line 73 a,
  • the two via holes 72a and 72b can be arranged on both sides of the device.
  • 73 a and 73 b have the same effect as the ground inductance and degrade the transistor gain.
  • the gain degradation due to the increase in the ground inductance is slower for the common emitter transistor than for the common base transistor.
  • the cascode type In addition to the effect of further stabilizing the operation of the amplifier, the interval between the via holes 72a and 72b and the transistor 66 is widened, and the yield is improved.
  • two via holes 72a and 72b are connected to the emitter terminal 66E via transmission lines 73a and 73b. If 66 E and via holes 72a and 72b are placed close to each other, the gain can be improved.
  • the emitter terminal is replaced with a source terminal
  • the base terminal is replaced with a gate terminal
  • the collector terminal is replaced with a drain terminal. Similar effects can be obtained when a scode amplifier is configured.

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  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Abstract

On relie la borne de base (14B) d'un transistor (14) à la terre par un trou d'interconnexion (16) dans un système c.c. On relie une extrémité d'une ligne (17) de transmission à bout ouvert à la borne de base (14B) du transistor (14). La longueur électrique de ladite ligne (17) est fixée à environ ¼ de la longueur d'onde de la fréquence de fonctionnement. On prévient l'affaiblissement du gain en mettant à la terre borne de base (14B) du transistor (14) de même manière dans la fréquence de fonctionnement. Ce montage donne un amplificateur haute fréquence à fort rendement et à excellentes caractéristiques haute fréquence pour systèmes c.a. et c.c. si l'on relie la borne de mise à la terre du transistor par un trou d'interconnexion situé à une distance suffisante de ladite borne sans y connecter de capacité.
PCT/JP2002/002393 2001-03-28 2002-03-14 Amplificateur haute frequence WO2002080355A1 (fr)

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JP2001092228 2001-03-28
JP2001-92228 2001-03-28
JP2002-30947 2002-02-07
JP2002030947A JP2002359530A (ja) 2001-03-28 2002-02-07 高周波増幅器

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JP5019989B2 (ja) * 2007-08-01 2012-09-05 三菱電機株式会社 高周波増幅器
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JP5235750B2 (ja) * 2009-03-27 2013-07-10 三菱電機株式会社 歪補償回路
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JPS61285811A (ja) * 1985-06-13 1986-12-16 Fujitsu Ltd マイクロ波回路
JPH01305602A (ja) * 1988-06-02 1989-12-08 Sharp Corp マイクロ波回路
JPH0273818U (fr) * 1988-11-25 1990-06-06
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JPH07235740A (ja) * 1994-02-23 1995-09-05 Taiyo Yuden Co Ltd 高周波能動素子接地回路
JPH0918255A (ja) * 1995-06-30 1997-01-17 Nec Corp 半導体装置
JPH10322149A (ja) * 1997-05-16 1998-12-04 Nippon Telegr & Teleph Corp <Ntt> 高周波可変利得増幅器
JP2000101309A (ja) * 1998-09-22 2000-04-07 Nec Eng Ltd グランド回路及びこれを含むプリント基板

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