WO2002067054A3 - Structuration de photoresist haute resolution sur les structures a multiples couches deposees sur des substrats - Google Patents

Structuration de photoresist haute resolution sur les structures a multiples couches deposees sur des substrats Download PDF

Info

Publication number
WO2002067054A3
WO2002067054A3 PCT/EP2002/001140 EP0201140W WO02067054A3 WO 2002067054 A3 WO2002067054 A3 WO 2002067054A3 EP 0201140 W EP0201140 W EP 0201140W WO 02067054 A3 WO02067054 A3 WO 02067054A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
deposited onto
substrate
structure elements
layer structures
Prior art date
Application number
PCT/EP2002/001140
Other languages
English (en)
Other versions
WO2002067054A2 (fr
Inventor
Thomas Daeubler
Andreas Dietzel
Frank Voges
Original Assignee
Ibm
Ibm Deutschland
Thomas Daeubler
Andreas Dietzel
Frank Voges
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Ibm Deutschland, Thomas Daeubler, Andreas Dietzel, Frank Voges filed Critical Ibm
Priority to KR1020037010417A priority Critical patent/KR100582830B1/ko
Priority to AU2002229742A priority patent/AU2002229742A1/en
Priority to JP2002566721A priority patent/JP2004530255A/ja
Priority to EP02710837A priority patent/EP1433027A2/fr
Publication of WO2002067054A2 publication Critical patent/WO2002067054A2/fr
Publication of WO2002067054A3 publication Critical patent/WO2002067054A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

L'invention concerne la fabrication d'une structure à multiples couches, supérieure ou égale à 2 couches déposées sur un substrat, au cours de laquelle on irradie les éléments de la structure pour assurer l'exposition lithographique d'une couche de couverture et l'alignement automatique des différentes couches dans l'espace. Dans une première étape, on dépose une première couche sur le substrat. Dans une étape suivante, la première couche est structurée en éléments de structure. Dans une autre étape, une deuxième couche d'un matériau, qui est sensible à une interaction physique et/ou chimique appropriée pour un transfert d'image à partir des éléments de structure dans la deuxième couche, est déposée sur le substrat. La deuxième couche est exposée avec l'interaction préalablement mentionnée, émise ou modulée par les éléments de structure. Enfin, le matériau exposé ou non exposé de la deuxième couche est retiré du substrat, ce qui met en évidence la deuxième couche structurée en fonction dudit transfert d'image.
PCT/EP2002/001140 2001-02-21 2002-02-05 Structuration de photoresist haute resolution sur les structures a multiples couches deposees sur des substrats WO2002067054A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020037010417A KR100582830B1 (ko) 2001-02-21 2002-02-05 기판상에 증착된 다층 구조물에 대한 고분해능 포토레지스트 구조화
AU2002229742A AU2002229742A1 (en) 2001-02-21 2002-02-05 High-resolution photoresist structuring of multi-layer structures deposited onto substrates
JP2002566721A JP2004530255A (ja) 2001-02-21 2002-02-05 基板に堆積された多層構造の高分解能フォトレジスト構造化
EP02710837A EP1433027A2 (fr) 2001-02-21 2002-02-05 Structuration de photoresist haute resolution sur les structures a multiples couches deposees sur des substrats

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01104098 2001-02-21
EP01104098.7 2001-02-21

Publications (2)

Publication Number Publication Date
WO2002067054A2 WO2002067054A2 (fr) 2002-08-29
WO2002067054A3 true WO2002067054A3 (fr) 2003-04-17

Family

ID=8176547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/001140 WO2002067054A2 (fr) 2001-02-21 2002-02-05 Structuration de photoresist haute resolution sur les structures a multiples couches deposees sur des substrats

Country Status (5)

Country Link
EP (1) EP1433027A2 (fr)
JP (1) JP2004530255A (fr)
KR (1) KR100582830B1 (fr)
AU (1) AU2002229742A1 (fr)
WO (1) WO2002067054A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009072658A1 (fr) * 2007-12-04 2009-06-11 Canon Kabushiki Kaisha Procédé de fabrication d'écran plat
KR100980115B1 (ko) * 2008-01-07 2010-09-07 서울대학교산학협력단 발광 다이오드 코팅 방법
WO2011132805A1 (fr) * 2010-04-23 2011-10-27 우리엘에스티 주식회사 Procédé de revêtement d'une del
KR102037357B1 (ko) * 2018-06-21 2019-11-26 (주)라이타이저 색변환 다이오드의 제조방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399696A (en) * 1972-06-19 1975-07-02 Burroughs Corp Display panel printing apparatus
US4666236A (en) * 1982-08-10 1987-05-19 Omron Tateisi Electronics Co. Optical coupling device and method of producing same
US4709990A (en) * 1984-03-08 1987-12-01 Kabushiki Kaisha Toshiba Method of manufacturing a color-matrix-type liquid crystal display device
US4873175A (en) * 1986-01-08 1989-10-10 Shinto Paint Co., Ltd. Method of forming functional coating film between fine electric conductive circuits
JPH0273306A (ja) * 1988-09-09 1990-03-13 Toppan Printing Co Ltd カラーフィルタ及びその製造方法
WO1991010170A1 (fr) * 1989-12-22 1991-07-11 Manufacturing Sciences, Inc. Appareil de masquage programmable
EP0722100A1 (fr) * 1994-12-20 1996-07-17 Shinto Paint Company, Limited Méthode pour la fabrication d'un filtre polychrome et d'un dispositif d'affichage polychrome

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399696A (en) * 1972-06-19 1975-07-02 Burroughs Corp Display panel printing apparatus
US4666236A (en) * 1982-08-10 1987-05-19 Omron Tateisi Electronics Co. Optical coupling device and method of producing same
US4709990A (en) * 1984-03-08 1987-12-01 Kabushiki Kaisha Toshiba Method of manufacturing a color-matrix-type liquid crystal display device
US4873175A (en) * 1986-01-08 1989-10-10 Shinto Paint Co., Ltd. Method of forming functional coating film between fine electric conductive circuits
JPH0273306A (ja) * 1988-09-09 1990-03-13 Toppan Printing Co Ltd カラーフィルタ及びその製造方法
WO1991010170A1 (fr) * 1989-12-22 1991-07-11 Manufacturing Sciences, Inc. Appareil de masquage programmable
EP0722100A1 (fr) * 1994-12-20 1996-07-17 Shinto Paint Company, Limited Méthode pour la fabrication d'un filtre polychrome et d'un dispositif d'affichage polychrome

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 264 (P - 1057) 7 June 1990 (1990-06-07) *

Also Published As

Publication number Publication date
WO2002067054A2 (fr) 2002-08-29
AU2002229742A1 (en) 2002-09-04
JP2004530255A (ja) 2004-09-30
KR100582830B1 (ko) 2006-05-23
KR20040024545A (ko) 2004-03-20
EP1433027A2 (fr) 2004-06-30

Similar Documents

Publication Publication Date Title
EP0814503A3 (fr) Détecteur de radiation à l'état solide
WO2002095498A3 (fr) Technique de fabrication lithographique de dispositif
WO2006085220A3 (fr) Procede de formation d'une image dans une couche de resine photosensible comportant plusieurs couches antireflechissantes
US20100239833A9 (en) Elastomeric mask and use in fabrication of devices
EP0867929A3 (fr) Structure d'interconnexion électronique et méthode de fabrication associée
EP0810475A3 (fr) Méthode d'exposition utilisant le décalage de phase et masque à cet effet
KR100843553B1 (ko) 유기 전자 소자의 유기 물질층 패터닝 방법과 상기 방법을이용하여 제작된 유기 박막 트랜지스터 및 유기 전계 발광디바이스
EP0364740A3 (fr) Structure de dépôt d'une image de métallisation et procédé de formation d'une telle structure
JPS57130430A (en) Pattern formation
US20110081618A1 (en) Litho-litho etch (lle) double patterning methods
TW368685B (en) Method of fabricating bump electrode
EP1045289A3 (fr) Procédé lithographique avec une résolution en-dessous de la longueur d'onde d'exposition
WO2004079780A3 (fr) Procede de modelisation d'une photoresine sur une tranche a l'aide d'un masque reflechissant avec un revetement antireflechissant multicouche
JP2005519456A5 (fr)
WO2002067054A3 (fr) Structuration de photoresist haute resolution sur les structures a multiples couches deposees sur des substrats
US7914975B2 (en) Multiple exposure lithography method incorporating intermediate layer patterning
EP1054296A3 (fr) Méthode pour réaliser des motifs fins
WO2004006014A3 (fr) Utilisation d'une couche de carbone amorphe pour fabrication amelioree de reticules
US20010016247A1 (en) Laminate structure and method of manufacturing the same
JPS5595324A (en) Manufacturing method of semiconductor device
WO2002055990A3 (fr) Processus de microfabrication pour emetteurs de spectrometrie de masse en mode electronebulisation (electrospray)
JPH02156624A (ja) 半導体装置の製造方法
KR970077121A (ko) 고 분해능 리소그래피용 포토레지스트 시스템
JP2009184107A (ja) Ｍｅｍｓ装置を製造するためのシステムおよび方法
US20050255411A1 (en) Multiple exposure and shrink to achieve reduced dimensions

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020037010417

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002566721

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2002710837

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1020037010417

Country of ref document: KR

122 Ep: pct application non-entry in european phase
WWP Wipo information: published in national office

Ref document number: 2002710837

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1020037010417

Country of ref document: KR