WO2002047053A1 - Dispositif afficheur d'images son procede de fabrication et ci de commande d'affichage d'images - Google Patents

Dispositif afficheur d'images son procede de fabrication et ci de commande d'affichage d'images Download PDF

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Publication number
WO2002047053A1
WO2002047053A1 PCT/JP2001/010605 JP0110605W WO0247053A1 WO 2002047053 A1 WO2002047053 A1 WO 2002047053A1 JP 0110605 W JP0110605 W JP 0110605W WO 0247053 A1 WO0247053 A1 WO 0247053A1
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WO
WIPO (PCT)
Prior art keywords
image display
display device
transistor
receiving element
signal
Prior art date
Application number
PCT/JP2001/010605
Other languages
English (en)
Japanese (ja)
Inventor
Hikaru Nishitani
Makoto Yamamoto
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Publication of WO2002047053A1 publication Critical patent/WO2002047053A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2370/00—Aspects of data communication
    • G09G2370/18—Use of optical transmission of display information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body

Definitions

  • Image display device Description Image display device, method of manufacturing image display device, and image display driver IC
  • the present invention relates to an image display device, a method of manufacturing the image display device, and an image display driver IC.
  • an image display unit in which a plurality of pixels are arranged in a matrix are provided.
  • the image display unit is formed by two substrates and liquid crystal sealed between the substrates.
  • a pixel electrode corresponding to each pixel is formed on one substrate, and a counter electrode is formed on the other substrate so as to face each pixel electrode. I have.
  • a plurality of scanning signal lines for driving each pixel and a data signal line are provided so as to intersect each other.
  • a thin film transistor hereinafter, referred to as “TFT” having a function of switching the pixel electrode is formed at each intersection of the scanning signal line and the data signal line.
  • TFT thin film transistor
  • a scanning signal is applied to a scanning signal line by an image signal, and the scanning signal controls ON / OFF of the TFT. Further, a data signal is applied to the data signal line by the image signal. That is, TFT ONZ The liquid crystal is controlled for each pixel by the scanning signal and the data signal for performing the OFF control, whereby each pixel is turned on, and as a result, an image is displayed on the image display unit. .
  • the liquid crystal display device includes a scan driver for driving the scan signal line and a data driver for driving the data signal line.
  • Each of these drivers is composed of IC and has a driving circuit for driving the TFT.
  • the IC constituting the scanning driver and the IC constituting the data driver are collectively referred to as “image display driver IC”.
  • TAB Transmission Automated Bonding
  • COG Chip On Glass
  • FIG. 17 is a diagram showing a conventional liquid crystal display device in which an image display driver IC is connected by a TAB method.
  • 1 is an array substrate
  • 2 is a counter substrate
  • 3 is an image display driver IC.
  • Liquid crystal (not shown) is sealed between the array substrate 1 and the opposing substrate 2, and a portion of the array substrate 1 enclosing the liquid crystal, the liquid crystal, and the opposing substrate 2 is displayed on the screen. Department.
  • a TCP (Tape Carrier Package) 4 configured by bonding an image display dryino IC 3 to a flexible tape is used.
  • the TCP 4 is electrically connected to the connection portions 1 a to le provided near the outer periphery of the array substrate 1 by thermocompression. 5 is a peripheral substrate.
  • FIG. 18 is a diagram illustrating a conventional liquid crystal display device in which an image display driver IC is connected by a COG method. Note that among the symbols used in FIG. 18, those used in FIG. 17 are the same as those in FIG. 17. As shown in FIG. 18, in the connection by the C ⁇ ⁇ G method, the image display driver IC 3 is directly mounted near the outer periphery of the glass substrate 1. Each terminal of the image display driver IC is electrically connected to a scanning signal line or a data signal line by a conductive paste.
  • Reference numeral 6 denotes a connector for connecting the peripheral substrate 5 and the image display driver IC 3, and is formed by a flexible tape.
  • liquid crystal display devices for personal computers have been increased in the number of colors and the resolution to represent images close to natural images, and the number of input data bits has tended to increase. Therefore, the number of input terminals of the image display driver IC 3 connected to the peripheral board 5 also tends to increase.
  • the present invention has been made in view of such problems, and provides an image display device capable of reducing unnecessary radiation and reducing the number of data signal input terminals, a method of manufacturing the same, and an image display driver IC. Aim to
  • a first image display device of the present invention transmits a signal from a peripheral circuit to a drive circuit, and drives the plurality of transistors arranged in a matrix by the drive circuit to display an image.
  • An image display device for displaying wherein the peripheral circuit is configured to transmit the signal as an optical signal, and the driving circuit includes a light receiving element for receiving the optical signal. It is characterized by having.
  • part of at least one of the drive circuit and the transistor and part or all of the light receiving element can be formed in the same process. Specifically, when the light receiving element and the transistor are formed on at least an insulating film, an impurity implantation region, and an electrode on the same substrate, the electrode of the light receiving element and the transistor are formed. An electrode in the evening, a part or all of the impurity-implanted region of the light-receiving element and a part or all of the impurity-implanted region of the transistor, or the insulating film of the light-receiving element and the insulating film of the transistor. Can be formed by the same process.
  • the first image display device may include a solar cell.
  • a part of the drive circuit, a part of the transistor, a part or all of the light receiving element, and the solar cell Can be formed by the same process.
  • the driving circuit has a light emitting element for transmitting an optical signal to the peripheral circuit
  • the peripheral circuit has a light receiving element for receiving an optical signal from the driving circuit.
  • the optical signal transmitted from the driving circuit can include at least one of tablet position information, signal synchronization information, and peripheral luminance information.
  • At least one part of the light emitting element and part or all of the light emitting element are the same. It can be formed depending on the process. Specifically, when the light emitting element and the transistor are formed on at least an insulating film, an impurity implantation region, and an electrode on the same substrate, the electrode of the light emitting element and the electrode of the transistor are formed. Alternatively, the insulating film of the light emitting element and the insulating film of the transistor can be formed by the same process.
  • a part of the drive circuit, a part of the transistor, a part or all of the light receiving element, and a part or all of the light emitting element can be formed by the same process.
  • the first image display device may include a solar cell, and a part of the drive circuit, a part of the transistor, a part or all of the light emitting element, Some or all of the solar cells can be formed by the same process. In this case, some or all of the light receiving elements can be formed by the same process.
  • the optical signal is modulated light.
  • the peripheral circuit and the transistor are formed on separate substrates, respectively, and the substrate on which the peripheral circuit is formed and the substrate on which the transistor is formed are fixed.
  • a second image display device of the present invention transmits a signal from a peripheral circuit to a driving circuit, and drives the plurality of transistors arranged in a matrix by the driving circuit to display an image.
  • An image display device for displaying wherein the peripheral circuit is configured to transmit the signal as a radio signal, and the driving circuit includes a receiving element for receiving the radio signal. It is characterized by having.
  • the driving circuit has a transmitting element for transmitting a radio signal to the peripheral circuit, and the peripheral circuit has a receiving element for receiving a radio signal from the driving circuit.
  • the radio signal transmitted from the driving circuit can include at least one of evening position information, signal synchronization information, and peripheral luminance information.
  • a portion including the drive circuit and the transistor is detachable from a portion including the peripheral circuit, and an image can be displayed in a state separated from the portion including the peripheral circuit.
  • Configuration. it is preferable to provide a power supply for image display in a portion including the driving circuit and the transistor.
  • a solar cell can be used as the power source, and the solar cell can be provided on a substrate on which the transistor is disposed.
  • the first and second image display devices can be used as any one of a liquid crystal display device, an EL display device, and a field emission display device.
  • a peripheral circuit transmits an optical signal to a driving circuit, and the driving circuit receives the optical signal by a light receiving element and arranges the matrix in a matrix.
  • a method of manufacturing an image display device that displays an image by driving a plurality of transistors, wherein at least a part of the drive circuit and the transistor and a part or all of the light receiving element are simultaneously formed. It is characterized by having at least a forming step.
  • an electrode of the light receiving element is provided. And the electrode of the transistor, and part or all of the impurity-implanted region of the light-receiving element and part or all of the impurity-implanted region of the transistor, or insulating the insulating film of the light-receiving element from the transistor. It can be formed simultaneously with the film Wear.
  • the driving circuit includes a light emitting element for transmitting an optical signal including at least one of tablet position information, signal synchronization information, and peripheral luminance information to the peripheral circuit.
  • the peripheral circuit includes a light receiving element for receiving an optical signal including at least one of the tablet position information, signal synchronization information, and peripheral luminance information, wherein the driving circuit and the transistor At least one part thereof and part or all of the light emitting element can be formed at the same time.
  • the electrode of the light emitting element and the electrode of the transistor are formed on the same substrate with at least an insulating film, an impurity implantation region, and an electrode provided.
  • the electrode of the light emitting element and the electrode of the transistor are formed.
  • the insulating film of the light emitting element and the insulating film of the transistor can be formed simultaneously.
  • a first image display driver IC includes a light receiving element that converts an input optical signal into an electric signal.
  • the light receiving element is monolithically formed on a silicon substrate constituting the image display driver IC. Further, the light receiving element is preferably a photodiode or a phototransistor.
  • the second image display driver IC includes a light emitting element for converting an input electric signal into an optical signal.
  • the light emitting element is monolithically formed on a silicon substrate constituting the image display driver IC. Further, it is preferable that the light emitting element is an LED or a laser.
  • the driver IC is characterized by having a solar cell.
  • a fourth image display driver IC includes a device that receives a radio wave and converts it into an electric signal, and a device that converts an electric signal into a radio wave and transmits the same. It is characterized by having at least one.
  • a fifth image display driver IC includes an element for receiving a signal by magnetism and converting it into an electric signal, and a device for converting an electric signal into a magnetic signal and transmitting the signal. And at least one of the following elements.
  • FIG. 1 is a diagram illustrating a side surface of the image display device according to the first embodiment.
  • FIG. 2 is a diagram illustrating an upper surface of the image display device according to the first embodiment.
  • FIG. 3 is a sectional view showing an example of the light receiving element.
  • FIG. 4 is a diagram showing an example in which the light receiving element is formed on the substrate of the image display driver IC.
  • FIG. 5 is a cross-sectional view of the image display device according to the first embodiment, taken along line AA ′ in FIG.
  • FIG. 6 is a cross-sectional view showing an image display device in which light receiving elements are formed on an array substrate.
  • FIG. 7 is a diagram illustrating a side surface of the image display device according to the second embodiment.
  • FIG. 8 is a diagram illustrating an upper surface of the image display device according to the second embodiment.
  • FIG. 9 is a cross-sectional view illustrating an example of a light emitting element.
  • FIG. 10 is a cross-sectional view showing an example in which a light emitting element is formed on a substrate of an image display driver IC.
  • FIG. 11 shows an image display device in which light emitting elements are formed on an array substrate. It is sectional drawing.
  • FIG. 12 is a diagram illustrating an upper surface of the image display device according to the third embodiment.
  • FIG. 13 is a cross-sectional view illustrating the image display device in which a solar cell is formed on an array substrate.
  • FIG. 14 is a cross-sectional view showing an example in which the image display device shown in FIG. 6 is an EL display device.
  • FIG. 15 is a cross-sectional view showing an example in which the image display device shown in FIG. 11 is an EL display device.
  • FIG. 16 is a cross-sectional view showing an example in which the image display device shown in FIG. 13 is an EL display device.
  • FIG. 17 is a diagram showing a conventional liquid crystal display device in which an image display driver IC is connected by a TAB method.
  • FIG. 18 is a diagram illustrating a conventional liquid crystal display device in which an image display driver IC is connected by a COG method.
  • An image display device inputs a signal from a peripheral circuit to an image display driver IC, and drives a TFT provided on an array substrate by a drive circuit of the image display driver IC to display an image. Things.
  • the image display device includes a liquid crystal display device, an EL (Electro
  • Luminescent It can be used as a display device and a field emission display device. It should be noted that the image display device according to the present invention may be used as any of the above-described image display devices basically in a portion above the array substrate. The signal transmission is determined by the structure of the image display side (that is, the portion on the image display side), and the signal transmission is common to any of the above image display devices.
  • FIGS. 1 to 6 and 14 show an example in which the image display device according to the first embodiment is a liquid crystal display device
  • FIG. 14 shows an example in which the image display device according to the first embodiment is an EL display device. Is shown.
  • FIG. 1 is a diagram illustrating a side surface of the image display device according to the first embodiment.
  • FIG. 2 is a diagram illustrating an upper surface of the image display device according to the first embodiment.
  • the image display driver IC 3 including the drive circuit is mounted on the array substrate 1 by COG. Note that the drive circuit can be formed on a glass substrate for forming the array substrate 1 together with the TFT constituting the array substrate 1 as described later.
  • a peripheral circuit (not shown) for sending a signal to the image display driver IC 3 is provided on a peripheral substrate 5 separate from the array substrate 1 and the counter substrate 2.
  • Peripheral circuits provided on the peripheral substrate 5 provide image signals for driving the TFTs formed on the array substrate 1 to the array substrate 1 and control the TFTs formed on the array substrate 1 A control signal and a signal such as driving power are transmitted.
  • the light emitting element 7 is provided on the peripheral substrate 5, and the image display driver IC 3 has the light receiving element 8. Therefore, the peripheral circuit can convert the signal into an optical signal and transmit it to the image display driver IC 3, and the image display driver IC 3 can receive the optical signal transmitted from the light emitting element 7 .
  • Embodiment 1 what is transmitted as an optical signal is An image signal and a control signal, and driving power is supplied from the peripheral substrate 5 to the power supply wiring on the array substrate 1 via a flexible substrate or the like.
  • the light emitting element 7 and the light receiving element 8 are positioned so that an optical signal can be transmitted from the light emitting element 7 to the light receiving element 8.
  • a parallel-serial conversion circuit (not shown) is provided on the peripheral substrate 5, and a serial-parallel conversion circuit (not shown) is provided in the image display driver IC 3.
  • a parallel-serial conversion circuit (not shown) is provided on the peripheral substrate 5
  • a serial-parallel conversion circuit (not shown) is provided in the image display driver IC 3.
  • Modulated light is used for optical transmission.
  • the number of the light emitting elements 7 and the number of the light receiving elements 8 may be significantly smaller than the number of data bits.
  • each image display driver IC 3 receives light.
  • the elements 8 are provided one by one.
  • Each image display driver I C3 receives an image signal and a control signal corresponding to a signal line to be driven.
  • the light receiving element 8 may be formed only in a part of the image display driver 3 or only one image display driver IC 3.
  • the image signal and the control signal corresponding to the signal lines driven by all or a plurality of image display driver ICs 3 can be collectively received by one light receiving element 8, and the image display driver without the light receiving element 8 is formed.
  • a configuration for transmitting a signal to IC 3 is possible.
  • the image display driver IC 3 is mounted such that the surface of the silicon substrate on which the transistors and the like are formed does not face the array substrate.
  • the light-receiving element 8 is formed on the surface of the silicon substrate on which the transistor and the like are formed, and the light-receiving element 8 causes the light to be emitted. Since it is necessary to receive signals, the image display driver IC 3 is mounted so that the surface on which the light receiving element 8 such as a star is formed faces the array substrate 1.
  • the array substrate 1 and the peripheral substrate 5 are bonded by an adhesive. This is to prevent the positions of the light receiving element 8 and the light emitting element 7 from being shifted, and to realize stable light transmission and reception even when an external force is applied.
  • the connection reliability and the yield can be improved, and the return rate can be reduced.
  • simplifying the connection costs can be reduced, and unnecessary radiation (EMS, EMI) can be reduced, so that image quality can be stabilized and adverse effects on other devices can be reduced. can do.
  • the light receiving element 8 a single light receiving element manufactured separately from the image display driver IC 3 and the array substrate 1 can be used.
  • the light receiving element 8 may be mounted on the array substrate 1 separately from the image display driver IC 3, or may be packaged together with the image display driver IC 3. In the latter case, one IC package is formed by the image display driver IC 3 and the light receiving element 8.
  • the light receiving element 8 is formed (monolithically formed) together with the transistors constituting the pixel driver IC 3 on the silicon substrate on which the pixel driver IC 3 is formed. It is also preferable to form it on a glass substrate for forming the array substrate 1 together with the TFT.
  • the number of components mounted by COG can be reduced.
  • the drive circuit, the light-receiving element 8, and the TFT can all be formed on the same substrate, so that COG mounting is performed. The number of parts can be further reduced.
  • FIG. 3 is a sectional view showing an example of the light receiving element.
  • the light receiving element shown in FIG. 3 is formed separately from the image display driver IC and the array substrate. A light receiving element and a method for forming the same will be described with reference to FIG.
  • n-layer 13 is formed by doping phosphorus from the surface (upper surface in the figure) of p-type silicon substrate 11. Further, a P + layer (not shown) is formed by doping boron on the rear surface (the lower surface in the figure). An ion doping device is used for doping.
  • annealing is performed at 800 on the p-type silicon substrate 11 to form an SOG film as an anti-reflection film 9 on the surface side of the p-type silicon substrate 11 c
  • an n-electrode 10 is formed I do.
  • the n-electrode 10 is formed by removing a part of the antireflection film 9 by photolithographic etching, forming an aluminum film thereon by a sputtering device, and performing photolithographic etching.
  • an aluminum electrode 12 is formed on the back surface of the p-type silicon substrate 11 by a sputtering apparatus.
  • the light receiving element shown in FIG. 3 is completed.
  • the light receiving element shown in FIG. 3 is a photodiode.
  • FIG. 4 is a cross-sectional view showing an example in which a light receiving element is formed on a substrate of an image display driver IC. Based on Fig. 4, light receiving element and image display driver I The transistors constituting C and their manufacturing steps will be described.
  • a transistor will be described. As shown in FIG. 4, first, a resist pattern is formed by photolithography on a p-type silicon substrate 40, and phosphorus is implanted by ion doping into a portion where the resist pattern is not formed, so that a low impurity region is formed. A concentration implantation region (n—) 45 is formed.
  • annealing is performed in water vapor to form a thermal oxide film (gate oxide film) 49. Further, photolithography and etching are performed to remove the thermal oxide film other than the portion where the gate electrode 48 is to be formed and the gate electrode wiring. Next, a gate electrode 48 is formed by photolithography and a CVD method.
  • a resist pattern is formed by photolithography, and phosphorus is implanted by ion doping to form a high-concentration implantation region (n +) 44 serving as an impurity implantation region.
  • a silicon oxide film (Si 2 film) 42 is formed by TEOS-CVD.
  • contact holes are formed by photolithography and etching. Further, a titanium film and an aluminum film serving as electrodes are formed, and the titanium film and the aluminum film are formed by photolithography and etching except for the portions serving as the source electrode 43a, the drain electrode 43b, and the source / drain electrode wiring. Is removed. As a result, a transistor constituting the image display driver IC is completed.
  • an n-type amorphous silicon film 41 is formed on a p-type silicon substrate 40 with a thickness of 70 nm.
  • the n-type amorphous silicon film 41 is formed by a plasma CVD method.
  • the source gas is silane, which is a normal source gas.
  • a mixed gas containing phosphine is used.
  • boron is implanted by ion doping to form a p region 46.
  • the ion doping is performed at a high accelerating voltage, here 70 keV.
  • boron is implanted again by ion doping to form ap + region 47 near the surface of the amorphous silicon film 41. In this case, ion doping is performed at a low accelerating voltage, here, 10 keV.
  • a resist pattern is formed by photolithography, and phosphorus is implanted by ion doping to form a high-concentration implantation region (n +) 44 serving as an impurity implantation region.
  • a silicon oxide film 42 is formed by a TE ⁇ S—CVD method. Further, by photolithography and etching, and c to form a contact hole, a titanium film and an aluminum film serving as the electrode is formed and the by Fotorisogu Raffi and etching, anode electrode 4 3 c, the force cathode electrode 4 3 d and wiring the c This removing the titanium film and the aluminum film other than the portion, the light receiving element (PN photodiode) is completed.
  • PN photodiode light receiving element
  • the transistor and the light receiving element are formed on the same p-type silicon substrate 40.
  • the formation of the high-concentration implantation region (n +) 44, the silicon oxide film 42, and the electrodes (43a to 43d) are simultaneously performed in the same process in both the transistor and the light receiving element. It has been done.
  • a photodiode is formed as a light receiving element, but the light receiving element is not limited to this. It is not something to be done.
  • the light receiving element is a phototransistor
  • CCD, MOS, etc. may be used.
  • FIG. 5 is a cross-sectional view of the image display device according to the first embodiment, taken along a line AA ′ in FIG. Note that FIG. 5 shows only a part of the image display unit.
  • An image display unit of the image display device according to the first embodiment and a manufacturing process thereof will be described based on FIG.
  • the array substrate will be described. As shown in FIG. 5, first, a 300 nm-thick silicon oxide film is formed on the glass substrate 14 by TEOS-CVD to prevent impurities from diffusing from the glass substrate 14. The film is formed as 5.
  • the glass substrate 14 is used as the substrate.
  • the present invention is not limited to this, and a plastic substrate or a film substrate may be used.
  • the thickness of the base film 15 is not limited to 300 nm, and various settings can be made. Furthermore, a silicon nitride film can be used as the base film 15. The thickness of the base film 15 may be 200 nm or more in any case of the silicon oxide film and the silicon nitride film. If the thickness is 200 nm or less, the impurities from the glass substrate 14 diffuse into the silicon layer of the TFT, causing problems such as Vt shift of TFT characteristics.
  • an amorphous silicon film (not shown) is formed by a plasma CVD method.
  • the amorphous silicon film can be formed by using a low pressure CVD method or a sputtering method.
  • the thickness of the amorphous silicon film is preferably set to 30 nm to 90 nm, and is set to 70 nm in the first embodiment.
  • a heat treatment is performed at 450 ° C. for one hour as a dehydration step in order to remove hydrogen in the formed amorphous silicon film.
  • spa When a film formation method in which hydrogen is not contained in the amorphous silicon film or the amount of hydrogen is small is used, the dehydrogenation treatment is not required.
  • the amorphous silicon film is crystallized.
  • the amorphous silicon film becomes a polycrystalline silicon film.
  • the crystallization is performed by melting and crystallizing the amorphous silicon film using a laser annealing device.
  • the laser annealing device can move the substrate vertically and horizontally. If the amorphous silicon film is crystallized by irradiating a laser beam, it is necessary to irradiate with an energy density of about 16 OmJ / cm 2 or more at room temperature.
  • monodentate wavelength 30 8 nm
  • a plurality of pulses are emitted while changing the relative position between the optical axis of the laser beam and the substrate, and further overlapping the laser pulse and the change in the relative position.
  • the film is left in a hydrogen plasma, for example, at 450 ° C. for 2 hours as a hydrogenation step.
  • the polycrystalline silicon layer is patterned by photolithography and dry etching.
  • the polycrystalline silicon layer includes an LDD region (low-concentration implantation region) 17 described later, a source region and a drain region (hereinafter collectively referred to as a “source-drain region”) 16, and a channel region 21. Become.
  • a silicon oxide film is formed as a gate insulating film 18 to have a required thickness, for example, about 100 nm by a TEOS-C VD method.
  • a molybdenum-tungsten alloy film is formed by sputtering, and is patterned into a predetermined shape by etching to form a gate electrode 19.
  • the gate electrode 19 is used as a mask by an ion doping apparatus. Then, low-concentration phosphorus is implanted to form LDD regions (low-concentration implantation regions) 17. The channel area 21 is between the LDD area 17 and the LDD area 17. Next, a resist pattern is formed on the gate electrode 19 and 1 m from both ends by photolithography, and high-concentration phosphorus is implanted by an ion doping apparatus using the resist pattern as a mask to form a source. ⁇ An N-type region (impurity-implanted region) 16 serving as a drain region is formed.
  • a silicon oxide film 20b to be an interlayer insulating film is formed by a TEOS-CVD method, and annealing is performed at 55 in a nitrogen atmosphere to activate the implanted ions. Then, by etching, silicon oxide film
  • a contact hole penetrating through 20b and the gate insulating film 18 and reaching the source / drain region 16 formed of the polycrystalline silicon film is opened.
  • a titanium film and an aluminum-zirconium alloy film are formed by sputtering and patterned into a predetermined shape by etching to form a source electrode and a drain electrode (hereinafter collectively referred to as a “source-drain electrode”). ) To form 22.
  • n-type TFT is completed. If a p-type TFT is required, a photolithographic process and a B doping process may be added.
  • the amorphous silicon layer is used as the semiconductor layer, and the mobility is about lcm 2 / VS (1 ⁇ 10 4 m 2 / VS).
  • the image driver IC including the drive circuit is mounted by the TAB method or by directly pasting it on the glass substrate 14.
  • the mobility can be greatly improved (for example, 100 cm 2 / VS (IX 1 0 6 m 2 XVS)), in the example of FIG. 5, for the CMOS tiger Njisuta constituting a driving circuit (not shown), an image display portion on the glass substrate 1 4 formed around the TFT to configure ing.
  • An array substrate is completed by sequentially forming a silicon oxide film 20a to be formed, a planarizing film 29 made of a polyimide resin, a transparent electrode 28, and an alignment film 27.
  • an insulating substrate for example, a glass substrate of Corning Co., Ltd., part number 1737 is used, and this is used as a glass substrate 25.
  • liquid crystal 30 is sealed between the obtained array substrate and the opposing substrate to complete the image display section.
  • FIG. 6 shows a case where the light receiving element is formed on an array substrate.
  • FIG. 2 is a cross-sectional view showing an image display device according to an embodiment.
  • the image display device shown in FIG. 6 is also a liquid crystal display device similar to the image display device shown in FIG.
  • the TFT and the counter substrate are the same as those shown in FIG. 5, and are formed in the same steps. Therefore, the manufacturing process of the light receiving element will be described below.
  • a base film 15 is formed on a glass substrate 14.
  • a crystalline polysilicon film is formed, and high-concentration phosphorus is implanted to form an N-type region 16.
  • the base film 15 and the N-type region 16 are the same as those formed in the image display section, and are formed simultaneously by the same process. Has been established.
  • a p + polycrystalline silicon film is formed to a thickness of 70 nm by a plasma CVD apparatus using a mixed gas of silane and diporane as a source gas. Thereafter, a part of the p + polycrystalline silicon film is removed by photolithography and etching to form a P-type region 61. Further, a silicon oxide film 20b serving as a protective insulating film is formed by a TEOS-CVD method, and annealing is performed at 550 ° C. in a nitrogen atmosphere to activate the implanted ions. This silicon oxide film 20b is also the same as that formed in the image display section, and is formed simultaneously by the same process.
  • a contact hole reaching the N-type region 16 and a contact hole reaching the P-type region 61 are formed in the silicon oxide film 2 Ob by photolithography and etching.
  • a titanium film and an aluminum-zirconium alloy film are formed by sputtering, and are patterned into a predetermined shape by etching to form a force source electrode 60a and an anode electrode 60b.
  • the force source electrode 60a and the anode electrode 60b have different shapes from the source / drain electrodes 22, but are formed simultaneously with the source / drain electrodes 22 by the same process.
  • the light receiving element (PN-type photodiode) is completed by the above process. Also, in the example of FIG. 6, similarly to the example of FIG. 5, the transistors constituting the drive circuit are simultaneously formed on the glass substrate 14 in the same process as the image display TFT.
  • FIG. 14 is a cross-sectional view showing an example in which the image display device shown in FIG. 6 is an EL display device. Also in the image display device shown in FIG. 14, a TFT for pixels and a light receiving element are formed on a glass substrate 14 as in FIG. I However, since the image display device shown in FIG. 14 is an EL display device, the configuration of a portion closer to the display surface than the pixel TFT is different from the image display device shown in FIG.
  • an IT electrode 71 serving as a transparent electrode connected to the TFT drain electrode 22 is formed on the array substrate.
  • the ITO electrode is formed in the same manner as in the case of the liquid crystal display device shown in FIG. After that, the pattern between the IT electrodes is filled with a resin black resist by photolithography to form a light blocking layer 72. .
  • red, green, and blue light-emitting materials are applied in a pattern using, for example, an ink-jet printing apparatus to form a light-emitting layer 73.
  • polyvinyl carbazole is vacuum-deposited to form a hole injection layer 74.
  • an aluminum quinolinol complex 75 is formed, and a reflective pixel electrode 76 is formed thereon, for example, of aluminum.
  • a reflective pixel electrode 76 is formed thereon, for example, of aluminum.
  • the TFT when a pulse signal is applied to the scanning line so that the TFT is turned on and a display signal is applied to the signal line, the TFT is turned on and the current is supplied from the current supply line. Electric current flows, and the luminescent cell emits light.
  • a polydialkylfluorene derivative is used as an electroluminescent material, but the material is not limited to this.
  • the electroluminescent material include other organic materials, for example, other polyfluorene-based materials, polyphenylvinylene-based materials, and inorganic materials.
  • the formation of the light-emitting layer 73 using an electoran luminescent material is described above.
  • the present invention is not limited to the discharge formation by the ink jet described above, but may be a formation by coating such as a spin coat or a formation by vapor deposition.
  • a part of a TFT for image display, a part of a transistor forming a drive circuit, and a light receiving element are formed on a common glass substrate. Part of the element can be formed simultaneously. Therefore, compared to the case where the light receiving element is connected as a separate chip, (1) it is possible to reduce the connection failure, (2) the installation area is small, and the size can be reduced, and (3) the cost for connecting the light receiving element is reduced. The effect that reduction can be achieved can be obtained.
  • light transmission and reception by the light emitting element and the light receiving element are performed between the peripheral substrate and the image display driver IC.
  • an electromagnet or the like instead of a light emitting element and a light receiving element, as with the optical transceiver also c This can also be configured to transmit and receive signals by magnetic, reducing the connection wire Can be.
  • the light emitting element and the light receiving element it is possible to use a transmitting element for transmitting a radio wave and a receiving element for receiving the radio wave to transmit and receive a signal by the radio wave. Also in this case, the number of connection wirings can be reduced as in the case of optical transmission / reception. Furthermore, when signals are transmitted and received by radio waves, there are advantages that the signal transmission distance is long and that signals are transmitted even if there is an obstacle.
  • FIG. 7 to 11 show examples in which the image display device according to the second embodiment is a liquid crystal display device
  • FIG. 15 shows an example in which the image display device according to the first embodiment is an EL display device.
  • FIG. 7 is a diagram illustrating a side surface of the image display device according to the second embodiment.
  • FIG. 8 is a diagram illustrating an upper surface of the image display device according to the second embodiment.
  • the image display device according to the second embodiment is also a liquid crystal display device similar to the first embodiment.
  • the image display driver IC 3 including the drive circuit is mounted on the array substrate 1 by COG.
  • the image display driver IC 3 has the light emitting element 3, and the peripheral substrate 5 has the light emitting element 7.
  • the image display device according to the second embodiment is characterized in that the tablet is formed in the image display unit, the image driver IC 3 has the light emitting element 31, and the peripheral substrate 5 has the light receiving element 32.
  • This is different from the image display device according to the first embodiment in that it has the same configuration as the image display device according to the first embodiment.
  • the array substrate 1 and the opposing substrate 2 of the image display device according to the second embodiment have the same configuration as the array substrate and the opposing substrate shown in FIG.
  • the optical signal transmitted from the image display driver IC 3 for example, the optical signal including at least one of evening bullet position information, signal synchronization information, and peripheral luminance information
  • the signal can be transmitted to the peripheral board 5.
  • the positioning of the light emitting element 31 and the light receiving element 32 is performed in the same manner as the positioning of the light emitting element 7 and the light receiving element 8 so that an optical signal can be transmitted.
  • a parallel / serial conversion circuit (see FIG. (Not shown), and a serial-to-parallel conversion circuit is provided on the peripheral board 5. Modulated light is used for optical transmission. Therefore, if the image display device according to the second embodiment is applied to an image display device that needs to transmit a signal from the image display driver IC 3 to the peripheral substrate 5, it is possible to suppress an increase in signal wiring, and Transmission reliability can be improved, and high-speed transmission is possible.
  • each image display driver IC 3 is provided with one light emitting element 31 in addition to the light receiving element 8.
  • Each image display driver IC 3 receives an image signal and a control signal corresponding to a signal line to be driven, and transmits tablet information, signal synchronization information and peripheral luminance information corresponding to the signal line to be driven.
  • the light receiving element 8 and the light receiving element 31 may be formed only in a part of the image display driver 3 or only one image display driver IC 3.
  • the image signal and the control signal corresponding to the signal lines driven by all or a plurality of the image display driver ICs 3 can be collectively received by one light receiving element 8. It is possible to adopt a configuration in which a signal is transmitted to the image display driver IC 3 where the element 8 is not formed.
  • the tablet information, signal synchronization information, and peripheral luminance information corresponding to the signal lines driven by all or a plurality of image display driver ICs 3 can be transmitted collectively by one light emitting element, and the light emitting element 31
  • the signal of the unformed image display driver IC 3 can also be transmitted to the peripheral substrate 5.
  • the image display driver IC 3 is mounted such that the surface on which the light receiving element 8 and the light emitting element 31 are formed faces the array substrate 1 such as a transistor. ing.
  • the array substrate 1 and the peripheral substrate 5 are adhered by an adhesive.
  • the power supply line needs to be electrically connected between the peripheral substrate 5 and the array substrate 1, and the peripheral substrate 5
  • the number of connection points between the plate 5 and the array substrate 1 can be greatly reduced. Therefore, by using the image display device and the image display driver IC according to the second embodiment, the connection reliability and the yield can be improved, and the return rate can be reduced. In addition, cost can be reduced by simplifying the connection, and unnecessary radiation (EMS, EMI) can be reduced, so that image quality can be stabilized and adverse effects on other devices can be reduced. can do.
  • EMS unnecessary radiation
  • the light receiving element 8 can be formed in the same manner as in the first embodiment.
  • the light emitting element 31 a single light emitting element manufactured separately from the image display driver IC 3 and the array substrate 1 can be used.
  • the light emitting element 31 may be mounted on the array substrate 1 separately from the image display driver IC 3, or may be packaged together with the image display driver IC 3.
  • the number of components mounted by COG can be reduced.
  • the drive circuit is formed on a glass substrate for forming the array substrate 1, the drive circuit, the light-receiving element 8, and the TFT can all be formed on the same substrate, so that COG mounting is performed. The number of parts can be further reduced.
  • FIG. 9 is a cross-sectional view illustrating an example of a light emitting element.
  • the light emitting device shown in FIG. It is created separately from the image display driver IC and array substrate. A light emitting device and a method for forming the same will be described with reference to FIG.
  • an oxide film 34 is formed on the surface (upper surface in the figure) of the P-type silicon substrate 11 using a CVD apparatus.
  • a part of the oxide film 34 is removed by photolithography and etching, and a silicon ultrafine particle film 35 is formed by a laser ablation method.
  • the light-emitting element shown in FIG. 9 is an EL light-emitting element (LED).
  • FIG. 10 is a cross-sectional view showing an example in which a light emitting element is formed on a substrate of an image display driver IC.
  • the transistors that constitute the light emitting element and the image display (dry) IC, and their manufacturing steps will be described.
  • the transistor shown in FIG. 10 is the same as the transistor shown in FIG. 4, and is formed by the manufacturing process shown in FIG.
  • 50 is a p-type silicon substrate
  • 51 is a silicon oxide film
  • 52 is a thermal oxide film
  • 56 a is a source electrode
  • 56 b is a drain electrode
  • 57 is a high-concentration implantation region.
  • a thermal oxide film 52 is formed on a p-type silicon substrate 50 by performing annealing in steam. Further, the thermal oxide film is removed by photolithography and etching except for the peripheral protection portion of the portion to be the light emitting portion.
  • a silicon ultrafine particle film 54 having a thickness of 70 nm is formed by a laser ablation method. Specifically, an n + silicon substrate is set up, a hole is formed on top of it, and a patterned mask is set up. The substrate is irradiated with laser light at a high intensity to scatter the n + silicon substrate and form a silicon ultrafine particle film 54.
  • an ITO film 55 is formed by sputtering, and portions other than the upper surface of the light emitting portion are removed by photolithography and etching. Thereafter, a silicon oxide film 51 serving as a protective film is formed by a TEOS-CVD apparatus.
  • a contact hole is formed in the silicon oxide film 51 by photolithography and etching.
  • a titanium film and an aluminum film to be electrodes are formed, and the titanium film and the aluminum film other than the portions that become the anode electrode 53 a and the force source electrode 53 b are removed by photolithography and etching. Thereby, the light emitting element is completed.
  • the transistor and the light emitting element are formed on the same p-type silicon substrate 50.
  • the formation of the silicon oxide film 51, the thermal oxide film 52, and the electrodes (53a, 53b, 56a, 56b) is performed in the same process in both the transistor and the light emitting element. At the same time.
  • an LED is formed as a light emitting element, but the light emitting element is not limited to this.
  • the light emitting element may be an LED using another material, for example, GaAs, InP or the like.
  • FIG. 11 is a cross-sectional view showing an image display device in which light emitting elements are formed on an array substrate.
  • the image display device shown in FIG. 11 is also a liquid crystal display device similar to the image display device shown in FIG.
  • the TFT and the opposing substrate are the same as those shown in FIG. 5, and are formed in the same steps.
  • the manufacturing process of the light emitting device will be described.
  • a base film 15 is formed on a glass substrate 14.
  • This base film 15 is the same as that formed in the image display section, and is formed simultaneously by the same process.
  • an ITO film to be a transparent electrode 64 is formed by a sputtering method.
  • a silicon ultrafine particle film 63 having a thickness of 70 nm is formed by a laser abrasion method. Specifically, an n + silicon substrate is installed, and a laser beam is irradiated to the n + silicon substrate with high intensity, and the n + silicon substrate is scattered to form a silicon ultrafine particle film (N-type region) 63. Film.
  • a 70 nm-thick p + polycrystalline silicon film 62 (P-type region) was formed and injected by a plasma CVD apparatus using a mixed gas of silane and diporane as a source gas. Anneal at 550 ° C in a nitrogen atmosphere to activate the ions.
  • This silicon oxide film 20b is also the same as that formed in the image display section, and is formed simultaneously by the same process. Thereafter, unnecessary portions of the P + polycrystalline silicon film 62 and the fine particle silicon film 63 are removed by photolithography and etching.
  • a contact hole reaching the transparent electrode 64 and a contact hole reaching the p + polycrystalline silicon film 62 are formed in the silicon oxide film 2 Ob by photolithography and etching.
  • a titanium film and an aluminum-zirconium alloy film are sputtered.
  • a film is formed by a ring, and is patterned into a predetermined shape by etching to form a force source electrode 60a and an anode electrode 60b.
  • the source electrode 60 a and the anode electrode 60 b have different shapes from the source / drain electrode 22, but are formed simultaneously with the source / drain electrode 22 by the same process.
  • a light emitting device (LED) is completed.
  • the CMOS transistors constituting the drive circuit are simultaneously formed on the glass substrate 14 by the same process as the TFT for image display.
  • FIG. 15 is a cross-sectional view showing an example in which the image display device shown in FIG. 11 is an EL display device.
  • a TFT for pixels and a light emitting element are formed on a glass substrate 14 similarly to FIG. 11, but the image display device shown in FIG. 15 is an EL display device.
  • the configuration of the portion closer to the display surface than the pixel TFT is different from the image display device shown in FIG.
  • the configuration of the portion on the display surface side from the pixel TFT is the same as the configuration shown in FIG.
  • a part of a TFT for image display, a part of a transistor forming a driving circuit, and a light emitting device are formed on a common glass substrate.
  • Part of the element can be formed simultaneously. Therefore, as compared with the case where the light emitting element is connected as a separate chip, (1) connection failure can be reduced, (2) the installation area can be reduced and the size can be reduced, and (3) the cost for connecting the light emitting element can be reduced. The effect that reduction can be achieved can be obtained.
  • a configuration can be adopted in which transmission and reception by a magnetic signal are performed by using an electromagnet or the like instead of the light emitting element and the light receiving element, and the radio wave is transmitted. Transmitting transmitting element and receiving radio waves It is possible to adopt a configuration in which transmission and reception by radio signals are performed using the receiving element.
  • FIG. 12 is a diagram illustrating an upper surface of the image display device according to the third embodiment.
  • the image display device includes an array substrate 1 and a counter substrate 2 similar to those of the first embodiment, but includes a peripheral substrate (not shown).
  • This embodiment differs from the first embodiment in that a transmitting element (not shown) for transmitting a radio signal is attached, and the image display driver IC 3 has a receiving element 38 for receiving the radio signal.
  • a solar cell 36 having an amorphous silicon or polysilicon light-receiving layer on the array substrate 1 is formed.
  • the image display unit is driven by the solar cell 36.
  • the image display device according to the third embodiment includes a rechargeable secondary battery 37.
  • the secondary battery 37 is charged by the solar battery 36 to stabilize the power supply to the image display.
  • the array substrate 1 is provided with the power supply, and the peripheral substrate and the image display driver transmit and receive by radio signals. Therefore, the array substrate 1 and the counter substrate 2 can be detached from the peripheral substrate, that is, from the image display device. Further, since the array substrate 1 is provided with a power supply by the solar cell 38, it is possible to display an image in a state where the array substrate 1 is separated from the peripheral substrate.
  • the images according to Embodiments 1 and 2 It is possible for the image display device to have a solar cell.
  • the array substrate 1 and the counter substrate 2 can be configured to be detachable from the peripheral substrate.
  • the image display devices according to the first and second embodiments transmission and reception by optical signals are performed, so that the signal transmission distance is short, and it is difficult to transmit signals if there is an obstacle. There's a problem. From this point, it can be said that the image display device according to the third embodiment is more suitable for a detachable configuration.
  • the supply of light to the solar cell 38 may be performed by external light or by irradiation of light from a peripheral substrate. It is also possible to design so that part of the light emitted by the backlight used for image display is incident on the solar cell.
  • the image display driver IC 3 can be provided with a transmitting element in addition to the transmitting element 38, and the peripheral substrate can be provided with a receiving element in addition to the transmitting element. it can.
  • a radio signal including at least one of, for example, tablet position information, signal synchronization information, and peripheral luminance information can be transmitted to the peripheral board, as in the second embodiment.
  • the solar cell 38 is formed around the image display unit, but is not limited to this, and may be formed in the image display unit. Further, the solar cell 38 may be a single solar cell manufactured separately from the image display driver IC 3 and the array substrate 1. The solar cell 38 may be packaged together with the image display driver IC 3. In this case, the image display driver IC 3 and the solar cell 38 form one IC package.
  • the solar cells 38 It is preferable to form them (monolithically) together with the transistors constituting the pixel driver IC 3 on a silicon substrate for forming the driver IC 3, and to form a TFT and a TFT on a glass substrate for forming the array substrate 1. It is also preferable to form them together.
  • one IC chip is formed by the solar cell 38 and the transistor constituting the image display driver IC3, so that the number of components mounted by COG can be reduced.
  • a drive circuit is formed on a glass substrate for forming the array substrate 1, the drive circuit, the solar cell 38, and the TFT can all be formed on the same substrate. The number of parts required can be further reduced.
  • the step of forming the light receiving element shown in FIG. 4 may be performed so that the area of the light receiving section is increased.
  • FIGS. 12 to 13 show an example in which the image display device according to the third embodiment is a liquid crystal display device
  • FIG. 16 shows an example in which the image display device according to the first embodiment is an EL display device. An example is shown.
  • FIG. 13 is a cross-sectional view showing an image display device in which a solar cell is formed on an array substrate.
  • the image display device shown in FIG. 13 is also a liquid crystal display device similar to the image display device shown in FIG.
  • the TFT and the counter substrate are the same as those shown in FIG. 5, and are formed in the same steps.
  • the manufacturing process of the solar cell will be described.
  • a base film 15 is formed on a glass substrate 14.
  • a crystalline polysilicon film is formed, and high-concentration phosphorus is implanted to form an N-type region 16.
  • the underlayer 15 and the N-type region 16 are connected to the image display section. Are formed at the same time by the same process.
  • a p + polycrystalline silicon film is formed to a thickness of 70 nm by a plasma CVD apparatus using a mixed gas of silane and diporane as a source gas. Then, a part of the P + polycrystalline silicon film is removed by photolithography and etching to form a P-type region 61.
  • a silicon oxide film 2 Ob serving as a protective insulating film is formed by a TEOS-CVD method, and annealing is performed at 550 ° C. in a nitrogen atmosphere to activate the implanted ions.
  • This silicon oxide film 20b is also the same as that formed in the image display section, and is formed simultaneously by the same process.
  • a contact hole reaching the N-type region 16 and a contact hole reaching the P-type region 61 are formed in the silicon oxide film 2 Ob by photolithography and etching.
  • the contact holes are formed so that the distance between the contact holes is shorter than in the case of the light emitting element shown in FIG.
  • a titanium film and an aluminum-zirconium alloy film are formed by sputtering, and patterned into a predetermined shape by etching to form a force source electrode 64a and an anode electrode 64b.
  • the source electrode 64 a and the anode electrode 64 b have different shapes from the source / drain electrodes 22, but are formed simultaneously with the source / drain electrodes 22 by the same process.
  • FIG. 16 is a cross-sectional view showing an example in which the image display device shown in FIG. 13 is an EL display device.
  • the image display device shown in FIG. 16 is an EL display device.
  • a TFT for pixels and a light emitting element are formed on the glass substrate 14 as in FIG. 13 c.
  • the image display device shown in FIG. 16 is an EL display device. Therefore, the configuration of the portion closer to the display surface than the pixel TFT is different from the image display device shown in FIG. The configuration of the portion on the display surface side from the pixel TFT is the same as the configuration shown in FIG.
  • a part of a TFT for image display, a part of a transistor forming a driving circuit, and a part of a solar cell are simultaneously formed on a common glass substrate. Can be formed. Therefore, compared to the case where a solar cell is separately installed and connected, (1) connection failure can be reduced, (2) the installation area can be reduced, and the size can be reduced. (3) The cost for connecting the solar cell can be reduced. The effect that reduction is possible can be obtained. Industrial applicability
  • a mode in which a light receiving element is provided in a peripheral circuit and a light emitting element is provided in a drive circuit it becomes possible to transmit the tablet information without increasing the number of connection wires of the image display unit. Further, by transmitting the signal synchronization information from the driving circuit to the peripheral circuit, the reliability of signal transmission can be improved, and a signal having a larger amount of information can be transmitted.
  • the signal transmission and reception distance can be increased, and signal transmission and reception can be performed even if there is a shield between the peripheral circuit and the drive circuit. It is possible.
  • a solar cell and a rechargeable battery can be installed on an array substrate.
  • electrical connection wiring between the peripheral circuit and the drive circuit can be eliminated, and the reliability can be further improved.
  • the image display portion can have a detachable structure, and the degree of freedom in using the image display device of the present invention can be increased.

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  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
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Abstract

L'invention concerne un dispositif afficheur d'images pour la transmission d'un signal à un CI de commande d'affichage d'images (3) à partir d'un substrat périphérique (5) et pour la commande des transistors disposés dans une matrice, au moyen du CI de commande d'affichage d'images, de sorte qu'une image soit affichée. Un élément luminescent (7) est prévu sur le substrat périphérique (5), de manière que le signal soit converti en un signal lumineux et soit transmis, et un élément récepteur de lumière (8) pour recevoir le signal lumineux est prévu dans l'IC de commande d'affichage d'images (3). Une partie du CI de commande d'affichage d'image (3), une partie des transistors prévus dans une matrice et une partie de l'élément récepteur de lumière (8) sont formées simultanément en une étape.
PCT/JP2001/010605 2000-12-05 2001-12-05 Dispositif afficheur d'images son procede de fabrication et ci de commande d'affichage d'images WO2002047053A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3509103A4 (fr) * 2016-08-31 2020-04-08 Boe Technology Group Co. Ltd. Panneau d'affichage, dispositif d'affichage et dispositif de transmission de signal

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Publication number Priority date Publication date Assignee Title
JPH04322296A (ja) * 1990-11-30 1992-11-12 Philips Gloeilampenfab:Nv アドレスできるマトリックス装置
JPH08314413A (ja) * 1995-05-23 1996-11-29 Matsushita Electric Ind Co Ltd 液晶表示装置および液晶駆動用ｉｃ
JPH11133392A (ja) * 1997-11-04 1999-05-21 Rohm Co Ltd 液晶表示素子
JP2000020011A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 画像表示装置
JP2000172216A (ja) * 1998-09-28 2000-06-23 Sharp Corp ディスプレイの駆動方法および駆動装置
JP2000258792A (ja) * 1999-03-10 2000-09-22 Rohm Co Ltd 液晶表示装置およびその基板

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Publication number Priority date Publication date Assignee Title
JPH04322296A (ja) * 1990-11-30 1992-11-12 Philips Gloeilampenfab:Nv アドレスできるマトリックス装置
JPH08314413A (ja) * 1995-05-23 1996-11-29 Matsushita Electric Ind Co Ltd 液晶表示装置および液晶駆動用ｉｃ
JPH11133392A (ja) * 1997-11-04 1999-05-21 Rohm Co Ltd 液晶表示素子
JP2000020011A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 画像表示装置
JP2000172216A (ja) * 1998-09-28 2000-06-23 Sharp Corp ディスプレイの駆動方法および駆動装置
JP2000258792A (ja) * 1999-03-10 2000-09-22 Rohm Co Ltd 液晶表示装置およびその基板

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3509103A4 (fr) * 2016-08-31 2020-04-08 Boe Technology Group Co. Ltd. Panneau d'affichage, dispositif d'affichage et dispositif de transmission de signal
US10657920B2 (en) 2016-08-31 2020-05-19 Boe Technology Group Co., Ltd. Display panel, display device and signal transmission device

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