WO2002035607A3 - Semiconductor assembly and method for producing semiconductor assemblies of this type - Google Patents

Semiconductor assembly and method for producing semiconductor assemblies of this type Download PDF

Info

Publication number
WO2002035607A3
WO2002035607A3 PCT/DE2001/003880 DE0103880W WO0235607A3 WO 2002035607 A3 WO2002035607 A3 WO 2002035607A3 DE 0103880 W DE0103880 W DE 0103880W WO 0235607 A3 WO0235607 A3 WO 0235607A3
Authority
WO
WIPO (PCT)
Prior art keywords
interposer
semiconductor
assemblies
type
chip
Prior art date
Application number
PCT/DE2001/003880
Other languages
German (de)
French (fr)
Other versions
WO2002035607A2 (en
Inventor
Bernhard Brabetz
Anton Wimmer
Original Assignee
Siemens Ag
Bernhard Brabetz
Anton Wimmer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Bernhard Brabetz, Anton Wimmer filed Critical Siemens Ag
Publication of WO2002035607A2 publication Critical patent/WO2002035607A2/en
Publication of WO2002035607A3 publication Critical patent/WO2002035607A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An interposer (IP) comprised of an elastic dielectric is formed on the active surface of a semiconductor wafer, whereby electrically conductive connections (V) that are formed inside the interposer (IP) connect, in an electrically conductive manner, chip-side contacts (K) with terminals (A) on the top surface (OS) of the interposer (IP). The individual semiconductor assemblies (HA) subsequently result by dividing up the semiconductor wafer. The different thermal expansion behavior of the chip (C) and of the circuit support is largely compensated for by the elasticity of the interposer (IP) and by the preferably meandering design of the connections (V).
PCT/DE2001/003880 2000-10-23 2001-10-10 Semiconductor assembly and method for producing semiconductor assemblies of this type WO2002035607A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10052452.4 2000-10-23
DE2000152452 DE10052452A1 (en) 2000-10-23 2000-10-23 Semiconductor arrangement and method for producing such semiconductor arrangements

Publications (2)

Publication Number Publication Date
WO2002035607A2 WO2002035607A2 (en) 2002-05-02
WO2002035607A3 true WO2002035607A3 (en) 2002-10-03

Family

ID=7660718

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/003880 WO2002035607A2 (en) 2000-10-23 2001-10-10 Semiconductor assembly and method for producing semiconductor assemblies of this type

Country Status (2)

Country Link
DE (1) DE10052452A1 (en)
WO (1) WO2002035607A2 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019673A (en) * 1990-08-22 1991-05-28 Motorola, Inc. Flip-chip package for integrated circuits
EP0465197A2 (en) * 1990-07-02 1992-01-08 General Electric Company Multi-sublayer dielectric layers
DE4228274A1 (en) * 1992-08-26 1994-03-03 Siemens Ag Device contacting process for high density connections - esp. for contacting LEDs on common silicon@ chip without use of bonding techniques
WO1998025298A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Semiconductor device, method for manufacture thereof, circuit board, and electronic equipment
WO1999065075A1 (en) * 1998-06-12 1999-12-16 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
WO2000003571A1 (en) * 1998-07-10 2000-01-20 Siemens S.A. Method for producing interconnections with electrically conductive cross connections between the top and the bottom part of a substrate and interconnections having such cross connections
WO2000004584A2 (en) * 1998-07-14 2000-01-27 Infineon Technologies Ag Semiconductor component in a chip format and method for the production thereof
EP0991119A1 (en) * 1997-06-06 2000-04-05 Matsushita Electronics Corporation Semiconductor device and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3050807B2 (en) * 1996-06-19 2000-06-12 イビデン株式会社 Multilayer printed wiring board
JPH1174399A (en) * 1997-08-28 1999-03-16 Mitsubishi Electric Corp Semiconductor device
SG111958A1 (en) * 1998-03-18 2005-06-29 Hitachi Cable Semiconductor device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0465197A2 (en) * 1990-07-02 1992-01-08 General Electric Company Multi-sublayer dielectric layers
US5019673A (en) * 1990-08-22 1991-05-28 Motorola, Inc. Flip-chip package for integrated circuits
DE4228274A1 (en) * 1992-08-26 1994-03-03 Siemens Ag Device contacting process for high density connections - esp. for contacting LEDs on common silicon@ chip without use of bonding techniques
WO1998025298A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Semiconductor device, method for manufacture thereof, circuit board, and electronic equipment
US6255737B1 (en) * 1996-12-04 2001-07-03 Seiko Epson Corporation Semiconductor device and method of making the same, circuit board, and electronic instrument
EP0991119A1 (en) * 1997-06-06 2000-04-05 Matsushita Electronics Corporation Semiconductor device and method for manufacturing the same
WO1999065075A1 (en) * 1998-06-12 1999-12-16 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
EP1091399A1 (en) * 1998-06-12 2001-04-11 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
WO2000003571A1 (en) * 1998-07-10 2000-01-20 Siemens S.A. Method for producing interconnections with electrically conductive cross connections between the top and the bottom part of a substrate and interconnections having such cross connections
WO2000004584A2 (en) * 1998-07-14 2000-01-27 Infineon Technologies Ag Semiconductor component in a chip format and method for the production thereof

Also Published As

Publication number Publication date
WO2002035607A2 (en) 2002-05-02
DE10052452A1 (en) 2002-05-08

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