WO2002019479A3 - Injection laser - Google Patents

Injection laser Download PDF

Info

Publication number
WO2002019479A3
WO2002019479A3 PCT/RU2001/000290 RU0100290W WO0219479A3 WO 2002019479 A3 WO2002019479 A3 WO 2002019479A3 RU 0100290 W RU0100290 W RU 0100290W WO 0219479 A3 WO0219479 A3 WO 0219479A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical confinement
maximal optical
underlayers
heterojunction
underlayer
Prior art date
Application number
PCT/RU2001/000290
Other languages
French (fr)
Russian (ru)
Other versions
WO2002019479A2 (en
Inventor
Aleksander Aleksandrov Chelnyy
Marina Shalvovna Kobiakova
Vladimir Aleksandrovic Simakov
Petr Georgievich Eliseev
Original Assignee
Federalnoe G Unitarnoe Predpr
Aleksander Aleksandrov Chelnyy
Marina Shalvovna Kobiakova
Vladimir Aleksandrovic Simakov
Petr Georgievich Eliseev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Federalnoe G Unitarnoe Predpr, Aleksander Aleksandrov Chelnyy, Marina Shalvovna Kobiakova, Vladimir Aleksandrovic Simakov, Petr Georgievich Eliseev filed Critical Federalnoe G Unitarnoe Predpr
Priority to AU2001276805A priority Critical patent/AU2001276805A1/en
Publication of WO2002019479A2 publication Critical patent/WO2002019479A2/en
Publication of WO2002019479A3 publication Critical patent/WO2002019479A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

The inventive projection laser has a heterostructure in which a background impurity is maintained between confining doped underlayers of the maximal optical confinement which are nearest to an active layer, and in the active layer itself. The ratio between the P concentration of holes in said underlayer of the maximal optical confinement having the p-type conductivity, from the p-side and the N concentration of electrons in said underlayer of the maximal optical confinement having the n-type conductivity from the n-type (P/N ratio) is chosen such that it is greater than one, including the edges of a p-i-n space charge of a heterojunction. In addition, the edges of a p-i-n space charge of a heterojunction are arranged in the confining doped underlayers of the maximal optical confinement. The invention considerably increases the power output of single frequency transmitters, stabilises the temperature characteristics thereof and improves the efficiency and reliability of said transmitters.
PCT/RU2001/000290 2000-08-30 2001-07-16 Injection laser WO2002019479A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276805A AU2001276805A1 (en) 2000-08-30 2001-07-16 Injection laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2000122574 2000-08-30
RU2000122574A RU2168249C1 (en) 2000-08-30 2000-08-30 Injection laser

Publications (2)

Publication Number Publication Date
WO2002019479A2 WO2002019479A2 (en) 2002-03-07
WO2002019479A3 true WO2002019479A3 (en) 2003-02-13

Family

ID=20239599

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2001/000290 WO2002019479A2 (en) 2000-08-30 2001-07-16 Injection laser

Country Status (3)

Country Link
AU (1) AU2001276805A1 (en)
RU (1) RU2168249C1 (en)
WO (1) WO2002019479A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2539117C1 (en) * 2013-10-09 2015-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российский академии наук Semiconductor amplifier of optical emission
RU184264U1 (en) * 2018-05-04 2018-10-19 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук INJECTION LASER WITH SWITCHABLE GENERATION SPECTRUM

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
EP0959540A2 (en) * 1998-05-14 1999-11-24 Anritsu Corporation Semiconductor laser having effective output increasing function

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
EP0959540A2 (en) * 1998-05-14 1999-11-24 Anritsu Corporation Semiconductor laser having effective output increasing function

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
RALSTON J D ET AL: "LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33 GHZ IN INGAAS/GAAS/ALGAAS PSEUDOMORPHIC MQWRIDGE-WAVEGUIDE LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 6, no. 9, 1 September 1994 (1994-09-01), pages 1076 - 1079, XP000468068, ISSN: 1041-1135 *
WRIGHT A P ET AL: "22 GHZ-BANDWIDTH 1.5 UM COMPRESSIVELY STRAINED INGAASP MQW RIDGE-WAVEGUIDE DFB LASERS", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 29, no. 21, 14 October 1993 (1993-10-14), pages 1848 - 1849, XP000404312, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
AU2001276805A1 (en) 2002-03-13
RU2168249C1 (en) 2001-05-27
WO2002019479A2 (en) 2002-03-07

Similar Documents

Publication Publication Date Title
JP2009065048A (en) Semiconductor light-emitting element and method of manufacturing the same
EP1803158A1 (en) Method and structure for improved led light output
JP2006190976A (en) External resonator type surface light-emitting laser element having a plurality of quantum wells
WO2009051664A3 (en) Light emitting and lasing semiconductor devices and methods
CN207602981U (en) Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of
EP1286440A3 (en) Semiconductor laser device
JP5346450B2 (en) Nitride semiconductor light emitting device
JP3249999B2 (en) Semiconductor laser device
WO2002019479A3 (en) Injection laser
US7012742B2 (en) Gain-clamped semiconductor optical amplifier using Raman amplification principle
US6603785B2 (en) Semiconductor laser device
TW373361B (en) Semiconductor laser device
WO2002019480A3 (en) Method for producing an injection laser
JP2008263196A (en) Light-emitting element
EP1195864A3 (en) Semiconductor laser device
JP2005519488A (en) Laser diode with low absorption diode junction
JP2003273395A (en) Semiconductor device
JP2008124123A (en) Semiconductor laser device
JPH01179488A (en) Optical amplifier
WO2002075876A3 (en) New quantum dot laser structure
US5923688A (en) Semiconductor laser
US20070237198A1 (en) Vertical-stacked coupled quantum-dot vertical cavity surface emitting laser
JP2005294753A (en) Semiconductor light emitting device
GB2428884A (en) Avalanche quantum intersubband transition semiconductor laser
WO2002019483A3 (en) Method for increasing laser modulation bandwidth

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP