WO2002019479A3 - Laser a injection - Google Patents

Laser a injection Download PDF

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Publication number
WO2002019479A3
WO2002019479A3 PCT/RU2001/000290 RU0100290W WO0219479A3 WO 2002019479 A3 WO2002019479 A3 WO 2002019479A3 RU 0100290 W RU0100290 W RU 0100290W WO 0219479 A3 WO0219479 A3 WO 0219479A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical confinement
maximal optical
underlayers
heterojunction
underlayer
Prior art date
Application number
PCT/RU2001/000290
Other languages
English (en)
Russian (ru)
Other versions
WO2002019479A2 (fr
Inventor
Aleksander Aleksandrov Chelnyy
Marina Shalvovna Kobiakova
Vladimir Aleksandrovic Simakov
Petr Georgievich Eliseev
Original Assignee
Federalnoe G Unitarnoe Predpr
Aleksander Aleksandrov Chelnyy
Marina Shalvovna Kobiakova
Vladimir Aleksandrovic Simakov
Petr Georgievich Eliseev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Federalnoe G Unitarnoe Predpr, Aleksander Aleksandrov Chelnyy, Marina Shalvovna Kobiakova, Vladimir Aleksandrovic Simakov, Petr Georgievich Eliseev filed Critical Federalnoe G Unitarnoe Predpr
Priority to AU2001276805A priority Critical patent/AU2001276805A1/en
Publication of WO2002019479A2 publication Critical patent/WO2002019479A2/fr
Publication of WO2002019479A3 publication Critical patent/WO2002019479A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

L'invention concerne un laser à injection possédant une hétérostructure dans laquelle, d'une part, le taux d'impuretés de fond est assuré entre les sous-couches de limitation dopées qui sont disposées le plus près de la couche active ainsi que dans la couche active elle-même; d'autre part, le rapport de la concentration de trous P dans cette sous-couche de type 'p' du côté du type 'p' par rapport à la concentration d'électrons N dans ladite sous-couche de type 'n' du côté du type 'n', P/N, est supérieur à un, y compris sur les frontières de la charge d'espace de l'hétérojonction p-i-n; enfin, les frontières de la charge d'espace de l'hétérojonction se trouvent dans les sous-couches du dopant de limitation. Tous ces éléments permettent d'augmenter considérablement la puissance d'émission de sortie des émetteurs à fréquence unique et stabiliser leurs caractéristiques thermiques ainsi que d'augmenter leur efficacité et améliorer leur fiabilité.
PCT/RU2001/000290 2000-08-30 2001-07-16 Laser a injection WO2002019479A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276805A AU2001276805A1 (en) 2000-08-30 2001-07-16 Injection laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2000122574A RU2168249C1 (ru) 2000-08-30 2000-08-30 Инжекционный лазер
RU2000122574 2000-08-30

Publications (2)

Publication Number Publication Date
WO2002019479A2 WO2002019479A2 (fr) 2002-03-07
WO2002019479A3 true WO2002019479A3 (fr) 2003-02-13

Family

ID=20239599

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2001/000290 WO2002019479A2 (fr) 2000-08-30 2001-07-16 Laser a injection

Country Status (3)

Country Link
AU (1) AU2001276805A1 (fr)
RU (1) RU2168249C1 (fr)
WO (1) WO2002019479A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2539117C1 (ru) * 2013-10-09 2015-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российский академии наук Полупроводниковый усилитель оптического излучения
RU184264U1 (ru) * 2018-05-04 2018-10-19 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Инжекционный лазер с переключаемым спектром генерации

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
EP0959540A2 (fr) * 1998-05-14 1999-11-24 Anritsu Corporation Laser à semi-conducteur à puissance élevée

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
EP0959540A2 (fr) * 1998-05-14 1999-11-24 Anritsu Corporation Laser à semi-conducteur à puissance élevée

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
RALSTON J D ET AL: "LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33 GHZ IN INGAAS/GAAS/ALGAAS PSEUDOMORPHIC MQWRIDGE-WAVEGUIDE LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 6, no. 9, 1 September 1994 (1994-09-01), pages 1076 - 1079, XP000468068, ISSN: 1041-1135 *
WRIGHT A P ET AL: "22 GHZ-BANDWIDTH 1.5 UM COMPRESSIVELY STRAINED INGAASP MQW RIDGE-WAVEGUIDE DFB LASERS", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 29, no. 21, 14 October 1993 (1993-10-14), pages 1848 - 1849, XP000404312, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
AU2001276805A1 (en) 2002-03-13
WO2002019479A2 (fr) 2002-03-07
RU2168249C1 (ru) 2001-05-27

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