WO2002019479A2 - Laser a injection - Google Patents

Laser a injection Download PDF

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Publication number
WO2002019479A2
WO2002019479A2 PCT/RU2001/000290 RU0100290W WO0219479A2 WO 2002019479 A2 WO2002019479 A2 WO 2002019479A2 RU 0100290 W RU0100290 W RU 0100290W WO 0219479 A2 WO0219479 A2 WO 0219479A2
Authority
WO
WIPO (PCT)
Prior art keywords
οπτichesκοgο
τiπa
οgρanicheniya
injection laser
chτο
Prior art date
Application number
PCT/RU2001/000290
Other languages
English (en)
Russian (ru)
Other versions
WO2002019479A3 (fr
Inventor
Aleksander Aleksandrovich Chelnyy
Marina Shalvovna Kobiakova
Vladimir Aleksandrovich Simakov
Petr Georgievich Eliseev
Original Assignee
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus'
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus' filed Critical Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus'
Priority to AU2001276805A priority Critical patent/AU2001276805A1/en
Publication of WO2002019479A2 publication Critical patent/WO2002019479A2/fr
Publication of WO2002019479A3 publication Critical patent/WO2002019479A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Definitions

  • the present invention is related to the quantitative technology, and the nominal, to the large, specific, frequent, frequent,
  • Types of Injection Lasers Injection Lasers with a direct active emission and emission through an external laser radiation source ⁇ .Kakuma, ⁇ ., «I ⁇ , 1989, chap. 6, ss. 18-19; 3.5.
  • Injective lasers with a wide active area of generation give. It is possible to localize radiation in a narrow area and to create the most favorable conditions for the induced radiation and generation.
  • Various methods of forming active region of generation have been developed [Physics of laser lasers, ⁇ . / ⁇ . ⁇ .Kakuma, ⁇ ., «I ⁇ , 1989, chap. 6, ss. 18-19]. The latter may have been created by way of an optical restriction, but by an increase in the index of allocation of the active area. In comparison with the areas that are adjacent to it in the area of the ⁇ - ' ⁇ - ⁇ transition. That .
  • This injectable laser includes a laser heterostructure (hereinafter referred to as a “heterostructure”), which contains an active layer composed of a single component.
  • a laser heterostructure hereinafter referred to as a “heterostructure”
  • 35 ⁇ -type restrictive layer is facilitated by a concentration of 2 • 10 18 cm "3.
  • ⁇ -type boundary layer ⁇ group 3 One of the compartments is made up of two subgroups of ⁇ gru, which have a different degree of alloying.
  • the predominantly active limited edition of the game is leguminous with zinc, available 2 • 10 17 cm “3 to 8 • 10 17 cm “ 3 .
  • the following limited osgr is followed by Zinc 5 on the basis of 1, 5 • 10 18 cm “3 to 10 • 10 18 cm “ 3 .
  • Such a heterogeneous industrial complex is separated from the active layer by a weakly integrated peripheral unit. ⁇ As a result, a heavily-laced train does not participate in the formation of the ⁇ - ⁇ heterogeneous charge. Copyright [Patent No. 4679199. ( ⁇ ⁇ . ⁇ 8 ⁇ ), 07/07/1987, 372/44,
  • the basic task of the invention was to create an injection laser with an increased output radiation power in a single mode and in combination with a device. ⁇ and ⁇ elevated modes
  • the level of impurity corresponds to a concentration of less than 2 • 10 16 cm "3 .
  • the value ⁇ / ⁇ is selected in the range from 3 to 20. In this case, stabilization of the generation occurs in a single mode, while the frequency is increased
  • the empirical range of the output parameters of the Laser depends on the size of the non-continuous Best of all
  • the proposed Lazer may be sold for various heterogeneous heaters, including dual heterostructures with DGS, for quantum-well sizes.
  • the posed task is also solved, in other words, in the other restrictive layer, the simple active one is placed in the complete second. ⁇ u ⁇ azann ⁇ m v ⁇ ln ⁇ v ⁇ dn ⁇ m ⁇ dsl ⁇ e ⁇ bes ⁇ echivayu ⁇ u ⁇ ven ⁇ n ⁇ v ⁇ y ⁇ imesi ⁇ eimusches ⁇ venn ⁇ with ⁇ ntsen ⁇ atsiey less than 2 • U 16 cm "3.
  • the posed problem is also solved by the fact that the active layer 20 is formed at the extreme end of the one-to-one solution.
  • the active layer can be made in the form of a single quantum-active substitute.
  • the posed problem is solved in that a gain area is selected by the user.
  • Various implementation cases are proposed, and specifically: 35 barter areas have been introduced in the facility; The indicated barrier areas are located at the bottom edge of the 8 meza ⁇ l ⁇ s ⁇ a, ⁇ ichem in case ⁇ dn ⁇ m ba ⁇ e ⁇ nye ⁇ blas ⁇ i vy ⁇ lneny a depth ⁇ evyshayuschuyu depth ⁇ as ⁇ l ⁇ zheniya a ⁇ ivn ⁇ g ⁇ sl ⁇ ya in case d ⁇ ug ⁇ m ba ⁇ e ⁇ nye ⁇ blas ⁇ i vy ⁇ lneny ⁇ a ⁇ , ch ⁇ ⁇ sn ⁇ vanie meza ⁇ l ⁇ s ⁇ i ⁇ azmeschen ⁇ over a ⁇ ivnym sl ⁇ em on ⁇ ass ⁇ yanii ⁇ 0,2 m ⁇ m d ⁇ 0.8 m ⁇ m; 5 Firstly, one of the limited terms and conditions is that it
  • the operating system is not subject to any risk of poor performance.
  • the present invention is the original choice.
  • the laser in accordance with the invention of the invention, divided their basic equipment. Significantly increased the output radiation power in 5 single-mode and single-mode operation with increased efficiency, and the temperature stabilization and reliable operation. Otherwise, it is stabilized by one-sided and one-way radiation in a wider range of values of the output power than is known to the cost of the analogue.
  • the Lasers proposed by the present invention may be implemented at least for all that are known at the present time of the range of lengths of 15 laser radiation and to all that are known to exist.
  • ⁇ a ⁇ ig. 1 schematically shown, an entire section of the Lazer with the wide area of radiation generation, performed in the form of a mesentery. . ;
  • Fig. 2 a schematic, detailed cross-section of a 25 heterostructure is shown.
  • Fig. 3 a partition of the distribution of the impurities in the indicated consumer circuit is shown.
  • Fig. 4 shows a diagram of the directing of the Lazer in the area, in addition to the parallel area of the receiver, due to the fact that there is a difference in the output frequency of the receiver.
  • Heterostructure 3 has been implemented with the Consequently -type of a limited process of 5gr 5 with a different concentration of carriers ⁇ , variable in the range ⁇ 4 .
  • the 10th hetero-generator was powered by the heavily equipped components of Groups 8 and 5 ⁇ -- and the type of electrical compatibility, respectively.
  • LD emits on a mainstream, modest area for more than 150 meters.
  • the emission spectra of the radiated LD (Example 5) are different and different levels of output power are available , but the nominal: 21 - 2 mt, 22 - and 70 mt, and 23 mt which in the range
  • the frequency characteristics of the LD were also studied.
  • LDs with a length of 400 were manufactured
  • processors 3 in fact there is no illegal access to the unit 12.
  • Other options for the process 3 are similar to 54, 5.
  • P ⁇ edl ⁇ zhennye is ⁇ chni ⁇ i radiation is ⁇ lzuyu ⁇ sya in v ⁇ l ⁇ nn ⁇ ⁇ iches ⁇ i ⁇ sis ⁇ ema ⁇ communication and ⁇ e ⁇ edachi in ⁇ matsii in ⁇ iches ⁇ i ⁇ 'sve ⁇ s ⁇ s ⁇ ny ⁇ vychisli ⁇ elny ⁇ and ⁇ mmu ⁇ atsi ⁇ nny ⁇ sis ⁇ ema ⁇ , ⁇ y ⁇ y ⁇ iches ⁇ y communication, sis ⁇ ema ⁇ ⁇ iches ⁇ y ⁇ amya ⁇ i, s ⁇ e ⁇ s ⁇ ii and ⁇ a ⁇ zhe for na ⁇ ach ⁇ i ⁇ ve ⁇ d ⁇ elny ⁇ and v ⁇ l ⁇ nny ⁇ laze ⁇ v, ⁇ i s ⁇ zdanii laze ⁇ n ⁇ g ⁇

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

L'invention concerne un laser à injection possédant une hétérostructure dans laquelle, d'une part, le taux d'impuretés de fond est assuré entre les sous-couches de limitation dopées qui sont disposées le plus près de la couche active ainsi que dans la couche active elle-même; d'autre part, le rapport de la concentration de trous P dans cette sous-couche de type 'p' du côté du type 'p' par rapport à la concentration d'électrons N dans ladite sous-couche de type 'n' du côté du type 'n', P/N, est supérieur à un, y compris sur les frontières de la charge d'espace de l'hétérojonction p-i-n; enfin, les frontières de la charge d'espace de l'hétérojonction se trouvent dans les sous-couches du dopant de limitation. Tous ces éléments permettent d'augmenter considérablement la puissance d'émission de sortie des émetteurs à fréquence unique et stabiliser leurs caractéristiques thermiques ainsi que d'augmenter leur efficacité et améliorer leur fiabilité.
PCT/RU2001/000290 2000-08-30 2001-07-16 Laser a injection WO2002019479A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276805A AU2001276805A1 (en) 2000-08-30 2001-07-16 Injection laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2000122574 2000-08-30
RU2000122574A RU2168249C1 (ru) 2000-08-30 2000-08-30 Инжекционный лазер

Publications (2)

Publication Number Publication Date
WO2002019479A2 true WO2002019479A2 (fr) 2002-03-07
WO2002019479A3 WO2002019479A3 (fr) 2003-02-13

Family

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Application Number Title Priority Date Filing Date
PCT/RU2001/000290 WO2002019479A2 (fr) 2000-08-30 2001-07-16 Laser a injection

Country Status (3)

Country Link
AU (1) AU2001276805A1 (fr)
RU (1) RU2168249C1 (fr)
WO (1) WO2002019479A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2539117C1 (ru) * 2013-10-09 2015-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российский академии наук Полупроводниковый усилитель оптического излучения
RU184264U1 (ru) * 2018-05-04 2018-10-19 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Инжекционный лазер с переключаемым спектром генерации

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
EP0959540A2 (fr) * 1998-05-14 1999-11-24 Anritsu Corporation Laser à semi-conducteur à puissance élevée

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
EP0959540A2 (fr) * 1998-05-14 1999-11-24 Anritsu Corporation Laser à semi-conducteur à puissance élevée

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
RALSTON J D ET AL: "LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33 GHZ IN INGAAS/GAAS/ALGAAS PSEUDOMORPHIC MQWRIDGE-WAVEGUIDE LASERS" IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 6, no. 9, 1 September 1994 (1994-09-01), pages 1076-1079, XP000468068 ISSN: 1041-1135 *
WRIGHT A P ET AL: "22 GHZ-BANDWIDTH 1.5 UM COMPRESSIVELY STRAINED INGAASP MQW RIDGE-WAVEGUIDE DFB LASERS" ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 29, no. 21, 14 October 1993 (1993-10-14), pages 1848-1849, XP000404312 ISSN: 0013-5194 *

Also Published As

Publication number Publication date
AU2001276805A1 (en) 2002-03-13
RU2168249C1 (ru) 2001-05-27
WO2002019479A3 (fr) 2003-02-13

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