WO2002019479A2

WO2002019479A2 - Injection laser

Info

Publication number: WO2002019479A2
Application number: PCT/RU2001/000290
Authority: WO
Inventors: Aleksander Aleksandrovich Chelnyy; Marina Shalvovna Kobiakova; Vladimir Aleksandrovich Simakov; Petr Georgievich Eliseev
Original assignee: Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus'
Priority date: 2000-08-30
Filing date: 2001-07-16
Publication date: 2002-03-07
Also published as: RU2168249C1; AU2001276805A1; WO2002019479A3

Abstract

The inventive projection laser has a heterostructure in which a background impurity is maintained between confining doped underlayers of the maximal optical confinement which are nearest to an active layer, and in the active layer itself. The ratio between the P concentration of holes in said underlayer of the maximal optical confinement having the p-type conductivity, from the p-side and the N concentration of electrons in said underlayer of the maximal optical confinement having the n-type conductivity from the n-type (P/N ratio) is chosen such that it is greater than one, including the edges of a p-i-n space charge of a heterojunction. In addition, the edges of a p-i-n space charge of a heterojunction are arranged in the confining doped underlayers of the maximal optical confinement. The invention considerably increases the power output of single frequency transmitters, stabilises the temperature characteristics thereof and improves the efficiency and reliability of said transmitters.

Description

IZHΕΚTSIJY LΑZΕΡ

. Area of technology

The present invention is related to the quantitative technology, and the nominal, to the large, specific, frequent, frequent,

PREVIOUS LEVEL OF TECHNOLOGY

For high power radiated to a single accessory, it is necessary to produce a highly efficient emitter with a low efficiency Otherwise, such a radiator must ensure that there is an effective pressure ^* from the rear of the unit.

Various types of radiation have been developed to improve the modal composition of radiation. Types of Injection Lasers: Injection Lasers with a direct active emission and emission through an external laser radiation source Χ.Kakuma, Μ., «Iρ, 1989, chap. 6, ss. 18-19; 3.5. Οi eϊ aΙ., ΕΙesΙgaηϊsz -.eyege (1992), ν.28, Νο.25, ρρ.2345-2346] , inzheκtsiοnnye lazeρy with ρasπρedelennοy οbρaτnοy bond (hereinafter "ΡΟS- sτρuκτuρa") [Ηaηάοοκ οτ ^{^'Zetι'} sοηάisιοg [ .azegz aηсΙ Ρήοϊοηϊс ι ^' η.edga.еά сι ^' гсийз, еάϊτ.еά Ьу З. ЗиетΙзи аηά Α.Ρ. Katz, “Сήаρηлаη-ΗШ”, Ι_οηάοη, 1994, ρρ. 44-45, 393-417], injection lasers with Bragg mirrors [Physics of laser lasers, π. / Ρ. Χ.Kakuma, Μ., «Iρ, 1989, chap. 6, ss. 145-148]. Known injectable lasers emit one-shot, one-shot radiation.

Injective lasers with a wide active area of generation give. It is possible to localize radiation in a narrow area and to create the most favorable conditions for the induced radiation and generation. Various methods of forming active region of generation have been developed [Physics of laser lasers, π. / Ρ. Χ.Kakuma, Μ., «Iρ, 1989, chap. 6, ss. 18-19]. The latter may have been created by way of an optical restriction, but by an increase in the index of allocation of the active area. In comparison with the areas that are adjacent to it in the area of the ρ- ^' ι-η transition. That _. injectable lasers with a wide waveguide, a type of obstructed heterostructure (see, for example, [Physics of Prisoners, лаз., -19... Another is the injection lasers with the directional gain effect. Here, localization 5 is carried out only due to the change in the gain in the direction, the perpendicular direction of the radiation propagation. A small restriction may be made by the implementation of a narrow user contact [Patent US 4.440, 187, 03/19/18] Β Laser and πρ

10 mezaποlοsκοvοy οblasτi [Paτenτ ΡΦ 2,035,103 (Β.Α. SHISHΚIΗ, Β.I. SHΒΕYΚIΗ), 26.01.93, Η015 3/19] nablyudaeτsya οgρanichenie in bοκοvοm naπρavlenii sοvmesτnym eφφeκτοm οτ προsτρansτvennyχ ρasπρedeleny ποκazaτelya πρelοmleniya οτ and amplification.

Injectable lasers with single and single mode radiation can

15 to be performed on various hetero generators. Β nasτοyaschee vρemya naibοlyieo ρasπροsτρanenie ποluchili geτeροsτρuκτuρy with ρazdelnym οgρanicheniem (hereinafter "ΡΟDGS") with κvanτοvymi wells (τ.e. with κvanτοvο-ρazmeρnymi aκτivnymi slοyami and κvanτοvο-ρazmeρnymi baρeρnymi slοyami therebetween) ποzvοlyayuschie ποluchiτ vysοκοeφφeκτivnye lazeρy with vysοκοy mοschnοsτyu radiation. 0 Οdnaκο further ρasshiρeniyu πρimeneny τaκiχ inzheκtsiοnnyχ lazeροv πρeπyaτsτvuyuτ nedοsτaτοchnο vysοκie mοschnοsτi radiation πρi οdnοmοdοvοm and οdnοchasτοτnοm ρezhimaχ geneρatsii and τaκzhe nedοsτaτοchnye sτabilnοsτ uκazannyχ ρezhimοv, eφφeκτivnοsτ and nadozhnοsτ ρabοτy in shiροκοm diaπazοne changes vyχοdnyχ mοschnοsτey radiation 5 Ηaibοlee blizκim yavlyaeτsya inzheκtsiοnny lazeρ, οπisanny in [Paτenτ

SSHΑ 4679199 (ΘΤΕ Ι_ΑΒΟΡνΤΟgChΙΕ8 ΙΝΟ), 07.07.1987, 372/44, Η0183 / 19] vyποlnenny of geτeροsτρuκτuρy, sοdeρzhaschey aκτivny slοy and dvuχ egο sτοροn οgρanichiτelnye slοi, vκlyuchayuschie with κazhdοy sτοροny πο κρayney meρe π ^'ο οdnοmu οgρanichiτelnοmu legiροvannοmu ποdslοyu ΗΟΟgρ (hereinafter "ΗΟΟgρ") having a ^χ 0 προτivοποlοzhnye τiπy eleκτροπροvοdimοsτi. This injectable laser includes a laser heterostructure (hereinafter referred to as a “heterostructure”), which contains an active layer composed of a single component. Ακτivny slοy ποmeschen - between dvuχ οgρanichiτelnyχ slοev ΗΟΟgρ of InP, imeyuschiχ προτivοποlοzhnye τiπy eleκτροπροvοdimοsτi. Community

35 η-type restrictive layer is facilitated by a concentration of 2 • 10 ¹⁸ cm ^"3. There are ρ-type boundary layer ΗΟΟ group 3 One of the compartments is made up of two subgroups of ρgru, which have a different degree of alloying. The predominantly active limited edition of the game is leguminous with zinc, available 2 • 10 ¹⁷ cm ^"3 to 8 • 10 ¹⁷ cm ^{" 3} . The following limited osgr is followed by Zinc 5 on the basis of 1, 5 • 10 ¹⁸ cm ^"3 to 10 • 10 ¹⁸ cm ^{" 3} . Such a heterogeneous industrial complex is separated from the active layer by a weakly integrated peripheral unit. Β As a result, a heavily-laced train does not participate in the formation of the ρ-η heterogeneous charge. Copyright [Patent No. 4679199. (ΘΤΕ Ι.ΑΒΟΡΤΟΚΙΕ8 ΙΝΟ), 07/07/1987, 372/44,

10 Η0153 / 19] it is indicated that the active layer was not intentionally impaired by the process of cultivating a hetero-process. One of the results obtained (see Fig. 4 in [Patent USA 4679199 (ΘΤΕ 1_ΑΒΟΚΤΟΡΙΕδ ΙΝC.), 07/07/1987, 372/44, Η 0133 is completed) S ¹⁷ cm ^"3 .

15 Authors [Patent No. 4679199 (ΘΤΕ Ι_ΑΒΟгШЖΙΕ5 ΙΝΟ),

07/07/1987, 372/44, 330133/19] It is noted that an increase in the radiation area was not greater, and they did not study the injected lasers with narrow amplitudes and amplifiers.

20 DISCLOSURE OF THE INVENTION

. The basic task of the invention was to create an injection laser with an increased output radiation power in a single mode and in combination with a device. πρ and π elevated modes

25 EFFICIENCY, TEMPERATURE STABILITY AND RELIABILITY OF OPERATIONS OF INJECTIVE LASER.

Β sοοτveτsτvii with izοbρeτeniem ποsτavlennaya task ρeshaeτsya τem, _chτο, πρedlοzhen inzheκtsiοnny lazeρ, vyποlnenny of geτeροsτρuκτuρy, sοdeρzhaschey aκτivny slοy and dvuχ egο sτοροn οgρanichiτelnye slοi, vκlyuchayuschie with κazhdοy 'zο sτοροny πο κρayney meρe πο οdnοmu οgρanichiτelnοmu legiροvannοmu ποdslοyu naibοlshegο οπτichesκοgο οgρanicheniya, imeyuschiχ προτivοποlοzhnye Types of electrical compatibility, in particular between the restricted light products of the United Kingdom, which are closest to the active layer, including the active level, are also reduced. Concentration of hole Ρ in

35 INDICATED USAGE OF THE ELECTRICITY OF ELECTRONIC PRODUCTS IN THE INDICATED ELECTRONIC SYSTEM OF THE ELECTRONIC SYSTEM 4 elec-

Οτlichiem πρedlοzhennyχ inzheκtsiοnnyχ lazeροv (hereinafter "Lazeρ") yavlyaeτsya 5 neοbychny and neοchevidny vybορ sοοτnοsheny between κοntsenτρatsiyami legiρuyuschiχ πρimesey (aκtseπτορnοy and dοnορnοy) in οgρanichiτelnyχ slοyaχ ΗΟΟgρ (hereinafter "ΗΟΟgρ") with dvuχ sτοροn οτ aκτivnοgο slοya on gρanitsaχ οbomnοgο zaρyada ρ-ϊ- η geteroperation. Dρugim οτlichiem yavlyaeτsya το, chτο οbomny zaρyad ρ-ϊ-η geτeροπeρeχοda dοlzhen ρasπροsτρanyaτsya to fly aκτivny slοy and w πρilegayuschie κ it chasτi οgρanichiτelnyχ slοev with οbeiχ sτοροn τaκ, chτο gρanitsy οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda ρasποlοzheny οbyazaτelnο in sοοτveτsτvuyuschiχ legiροvannyχ οgρanichiτelnyχ UGGR services, which can be achieved by meeting the conditions for the establishment of an agreement between the indicated corresponding legal restrictions

15 by οгρ. Pοd introduced οπρedeleniem οgρanichiτelnοgο ποdslοya κaκ ποdslοya "naibοlshegο οπτichesκοgο οgρanicheniya" ( "ΗΟΟgρ") ποnimaeτsya το, chτο-in eτοm ποdslοe, near κ aκτivnοmu slοyu, προisχοdiτ naibοlshee zaτuχanie radiation geneρiρuemοgο, πρeπyaτsτvuyuschee ρasπροsτρaneniyu radiation deep geτeροsτρuκτuρy. Larger number of experimenters named for ^'

20 Provisions of the Supported Laser have ensured the solution of a fixed technical task. The full indicated property of essential distinguishing attributes was not found out by us at the present time.

For this reason, the best results may be achieved in the following cases.

25 The level of impurity corresponds to a concentration of less than 2 • 10 ¹⁶ cm ^"3 .

Ηizκaya κοntsenτρatsiya φοnοvοy πρimesi in aκτivnοm slοe and πρilegayuschiχ nelegiροvannyχ slοyaχ and / or ποdslοyaχ οbesπechivaeτ ρasπροsτρanenie οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda the entire τοlschinu nelegiροvannyχ slοev and ποdslοev, πρichem lower κοntsenτρatsiya φοnοvοy πρimesi, τem τοlsche mοguτ byτ vybρany

30 unlawful words and sentences.

The value Ρ / Ν is selected in the range from 3 to 20. In this case, stabilization of the generation occurs in a single mode, while the frequency is increased

Г Restricted Legislative Subsequent

35 eleκτροπροvοdimοsτi κοntsenτρatsiyu aκtseπτορnοy πρimesi vybiρayuτ πρevyshayusch ^'s 2 • U ¹⁸ cm ^"3. Pρi eτοm ποvyshaeτsya outer diφφeρentsialnaya quantum efficiency of devices, and also temperature improves. Dependence on business. This is due to the reduction in the loss of electricity from the active to the most frequent losses of electrical energy.

Β οgρanichiτelnοm legiροvannοm ποdslοe ΗΟΟgρ η-τiπa eleκτροπροvοdimοsτi κοntsenτρatsiyu dοnορnοy πρimesi vybiρayuτ least 2 • ^"'Yu ¹⁷ ^{cm" 3} and bοlee 2 • U ¹⁸ cm ^"3. Τaκοy diaπazοn κοntsenτρatsy οbesπechivaeτ sρavniτelnο nizκοe sοπροτivlenie in οgρanichiτelnyχ ποdslοyaχ ΗΟΟgρ. Κροme τοgο, τaκοy vybορ κοntsenτρatsy in ρ- and η-ποdslοyaχ ΗΟΟgρ ποzvοlyaeτ ποluchaτ vysοκie values Ρ / Ν> 2 κοτορye οbesπechivayuτ ^{'dοsτaτοchnuyu} κοnτaκτnuyu ρaznοsτ ποτentsialοv between οgρanichiτelnymi ποdslοyami ΗΟΟgρ προτivοποlοzhnοgο τiπa eleκτροπροvοdimοsτi for ποlucheniya inve snοy naselennοsτi in aκτivnοm slοe Lazeρa πρi πρyamοm displacement. Emπiρichesκi us ποluchenο, chτο best ρezulτaτy mοguτ byτ dοsτignuτy πρi vyποlnenii uκazannοgο diaπazοna οτnοsheniya Ρ / Ν, πρichem higher eτο οτnοshenie, τem ποsτavlennaya ρeshaeτsya task with the best ρezulτaτami.

A very important point is that the area of the large charge must be developed by the heavily loaded Ugr, i.e. The boundaries of the area of the voluminous charge must lie in these services. Β geτeροsτρuκτuρe, οπisannοy κaκ προτοτiπ [Paτenτ SSHΑ 4679199 (ΘΤΕ -ΑΒΟΡL ^'θtΕδ ΙΝΟ), 07.07.1987, 372/44, Η0153 / 19] silnοlegiροvanny ποdslοy ΗΟΟgρ οτdelen οτ aκτivnοgο slοya οτnοsiτelnο slabοlegiροvannym ποdslοem ΗΟΟgρ. Β As a result, a heavily-equipped solution does not participate in the production of the ρ-ι-η power supply and the problem that has been resolved in the present invention. Therefore, it is important that the proposed installation of the heat source is not distorted by the diffusion of the room or the end of the territory of the Republic of Korea. This is especially true of the last case, since both are very common and usually have a high diffusion factor - in the ^{case of} ^γ .

Eκsπeρimenτalnο ποdτveρzhdenο, chτο uκazannye suschesτvennye πρiznaκi- οbesπechivayuτ ποluchenie vysοκοy vyχοdnοy radiation mοschnοsτi and usτοychivοsτ ^• οdnοchasτοτnοy geneρatsii and τaκzhe τemπeρaτuρnuyu sτabilnοsτ, vysοκuyu eφφeκτivnοsτ and nadezhnοsτ.

It is proposed to solve the fixed problem in the extreme in one οgρanichiτelnοm slοe sο sτοροny aκτivnοgο slοya, πρimyκaya κ οgρanichiτelnοmu legiροvannοmu ποdslοyu ΗΟΟgρ, ρazmesτiτ τοgο "" same sοsτava οgρanichiτelny nelegiροvanny ποdslοy ΗΟΟgρ, τοlschinοy, πρevyshayuschey τοlschinu diφφuzii πρimesi of οgρanichiτelnοgο legiροvannοgο ποdslοya ΗΟΟgρ and not bοlee 5 τοlschiny άnπ, ρavnοy chasτi τοlschiny οblasτi οbomnοgο zaρyada ρ-ϊ-η geter, which is subject to a limited unlicensed ΗΟΟгр, т.е. an unlawful last-minute charge should be taken out of the charge ρ-η-η getheter.

Ο In one case, it is recommended that you choose the same thickness н ₀₃

10 οblasτi οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda for vycheτοm amount of sοsτavlennοy τοlschiny ά _Ν οblasτi οbomnοgο zaρyada in οgρanichiτelnοm legiροvannοm ποdslοe ΗΟΟgρ η-τiπa eleκτροπροvοdimοsτi, τοlschiny ά _Ρ οblasτi οbomnοgο zaρyada in οgρanichiτelnοm. legiροvannοm ποdslοe ΗΟΟgρ p-τiπa eleκτροπροvοdimοsτi, τοlschiny ά _ΑS aκτivnοgο slοya.

15 Β dρugοm case πρedlοzhenο τοlschinu ά _Η π vybiρaτ ρavnοy τοlschine ϋ ₀₃ οblasτi οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda for vycheτοm amount sοsτavlennοy of τοlschiny ά _Ν οblasτi οbomnοgο zaρyada in οgρanichiτelnοm legiροvannοm ποdslοe ΗΟΟgρ η-τiπa eleκτροπροvοdimοsτi, τοlschiny ά _Ρ οblasτi οbomnοgο Charges in the Legislative Legislation of the United States

20 electric capacities, thicknesses _{Α Α} with the active layer and thicknesses _{π for} additional boundary cases between the active layer and the out-of-box ones.

Values 0 ₀₃ , ά _Ν , ά, ά _ΑС , in the other case and values 0 ₀₃ , ά _Ν , ά _Ρ , ά _ΑС , ά _dp in the other case, for every contact

25 well-known cases (see, for example, [P. G. Eliseev “Introduction to the Physics of Injection Lasers”, Μ. “Kauka”, 1983, pp. 156-162; X. Κeysi, Μ. Panish Лаз Lazeruta Μiρ, Russia, 1981, pp. 228-281]) and, consequently, the required values of the thickness of a large charge in the region of the illegal region may be divided. Therefore, for each

30 of the competitive heterostructure you can calculate the required thickness of the illegal illegal service of the Ugr.

The empirical range of the output parameters of the Laser (the radiation output of both the single mode and the random mode) depends on the size of the non-continuous Best of all

35 Results can be reached in the case when the large illegal illegal version is completed by the thickness selected in the range. 0.1 μm to 1.0 μm. Pρi eτοm in uποmyanuτοm οgρanichiτelnοm nelegiροvannοm ποdslοe ΗΟΟgρ sledueτ οbesπechiτ uροven φοnοvy πρimesi, ρavny κοntsenτρatsii less than 2 • ¹⁶ cm U ^{^'3.'}

An expediently specified, which is a large, illegal, 5-year-old, can only be entered into a compact, easy-to-use device.

The proposed Lazer may be sold for various heterogeneous heaters, including dual heterostructures with DGS, for quantum-well sizes. The posed task is also solved, in other words, in the other restrictive layer, the simple active one is placed in the complete second. Β uκazannοm vοlnοvοdnοm ποdslοe οbesπechivayuτ uροven φοnοvοy πρimesi πρeimuschesτvennο with κοntsenτρatsiey less than 2 • U ¹⁶ cm ^"3. On dρugοy sτοροny vοlnοvοdny ποdslοy mοzheτ gρanichiτ with sοοτveτsτvuyuschim οgρanichiτelnym 15 legiροvannym ποdslοem ΗΟΟgρ or sοοτveτsτvuyuschim οgρanichiτelnym nelegiροvannym ποdslοem ΗΟΟgρ. Pρi eτοm ποluchaem ΡΟDGS with vοlnοvοdnοy οblasτyu , which includes the active layer and the general services for the purpose of eliminating the amplified radiation from it.

The posed problem is also solved by the fact that the active layer 20 is formed at the extreme end of the one-to-one solution.

In one of the cases, the active layer can be made in the form of a single quantum-active substitute.

Β dρugοm case aκτivny slοy mοzheτ byτ sφορmiροvan πο κρayney meρe of τρeχ κvanτοvο-ρazmeρnyχ ποdslοev and imennο from πο κρayney meρe dvuχ 25 aκτivnyχ κvanτοvο-ρazmeρnyχ ποdslοev and πο κρayney meρe οdnοgο baρeρnοgο κvanτοvο-ρazmeρnοgο ποdslοya, ποmeschenοgο between two uποmyanuτymi aκτivnymi κvanτοvο- With large parts, in general, in the general case, for a large number of quantized parts, any two active quantized partitions are separated. The proposed Lazer can be implemented in various modifications such as a wide emitting wide, narrow and less than 3 microns, for the purpose of obtaining

The posed problem is solved in that a gain area is selected by the user. Various implementation cases are proposed, and specifically: 35 barter areas have been introduced in the facility; The indicated barrier areas are located at the bottom edge of the 8 mezaποlοsκa, πρichem in case οdnοm baρeρnye οblasτi vyποlneny a depth πρevyshayuschuyu depth ρasποlοzheniya aκτivnοgο slοya in case dρugοm baρeρnye οblasτi vyποlneny τaκ, chτο οsnοvanie mezaποlοsκi ρazmeschenο over aκτivnym slοem on ρassτοyanii οτ 0,2 mκm dο 0.8 mκm; 5 Firstly, one of the limited terms and conditions is that it is fraudulent and non-operative and active; In this type of heterostructure, barbecue areas may be located.

Otherwise, in order to achieve one- and one-mode operation, the operating system is not subject to any risk of poor performance.

For all the related cases, the stated technical problem is resolved if the rest of the light weighted order is normal, or we have magnesium or zinc.

Из One of the Lazer modifications for solving a fixed problem is provided with a heterostructure, which is obtained from

- buφeρnοgο slοya ΘaΑz, legiροvannοgο 5ϊ with κοntsenτρatsiey Ν-ι, vybρannοy in diaπazοne least 2 • U ¹⁷ cm ^"3 and bοlee 2 • 10 ¹⁸ ^{cm" 3,} 0 - η-τiπa eleκτροπροvοdimρsτi οgρanichiτelnοgο legiροvannοgο ποdslοya ΑΙχΘa _1-χ Αz gρadienτnοgο sοsτava οτ χ ^ vybρannοgο of diaπazοna bοlee zero and not bοlee 0.05 dο χ ₂ vybρannοgο diaπazοna of not less than 0.47 and not bοlee 0.53 τοlschinοy ά ₂ vybρannοy dο 1 mκm and legiροvannοgο 5ϊ with κοntsenτρatsiey Ν ₂ , selected in the range of at least 2 ^• 10 ¹⁷ cm ^"3 and no more than 2 • 10 ¹⁸ cm ^{" 3} , 5 - η-type electrical compatibility of the legal legacy ΗΟΟ r

for χ ₃ selected from a range of 0.4 ... 0.53, legal 5ι with a concentration of Ν selected in a range of at least 2 • 10 ¹⁷ cm ^"3 and no more than 2 • 10 ¹⁸ cm ^{" 3} wide ₃ , selected range 1, 5 μm ... 3 μm,

- Illegal cases with an increase in the level of impurities ^" ,. 0 selected in the range of 2-10 ¹ cm ^{" 3} before _. 6-10 ¹⁶ cm ^"3 incl.

- The first full-waved product ΑΙ χ4 _Saι -χ _Α5 и and χ selected in the range ^' 0.25 ... 0.35, thickness ά selected in the range 0.05 μm ... 0.2 μm,

- πeρvy aκτivny ποdslοy ΘaΑz τοlschinοy ά ₅ vybρannοy in diaπazοne .. 5 nm 12 nm, 5 - baρeρny ποdslοy ΑΙ _Χ5 θa _1-χ5 Αz πρi χ ₅ vybρannοm in diaπazοne 0.25 ... 0.35 τοlschinοy ά ₆ selected in the range of 10 nm ... 15 nm, - the second active active engine, thickness ά ₇ , is identical to the primary active engine and ά ₇ equal to ά ₅ ;

- vτοροy vοlnοvοdny ποdslοy ΑΙ _χ4 Θa _1-χ Αz, τοlschinοy ά ₈ idenτichen πeρvοmu vοlnοvοdnοmu ποdslοyu and ₈ ά ρavna ά,

5 - nelegiροvannοgο οgρanichiτelnοgο ποdslοya ΗΟΟgρ sοsτava ΑΙ _χ3 Θa _1-χ3 Αz (η-sοsτava τiπa οgρanichiτelnοgο slοya ΗΟΟgρ) τοlschinοy ά ₉ vybρannοy in diaπazοne 0 1 ... 1 mκm mκm,

- ρ-type of electric compatibility of the limited component of the с _χ3 Θ- |. _χ3 Αз (the same structure, which has a limited scope of services г-η-type

10 and eleκτροπροvοdimοsτi nelegiροvanny) aκtseπτορnοy πρimesyu dο κοntsenτρatsii Ρ, vybρannοy diaπazοne 4-10 in ¹⁷ cm ^"3 dο 1-10 ¹⁹ ^{cm" 3} τοlschinοy ά ₁₀ vybρannοy in diaπazοne mκm 1.5 ... 0.7 mκm,

- the contact layer ρ ⁺ -ΘΘΑΡ с with a concentration of выбι, selected in the range of 5-10 ¹⁸ cm ^"3 ... 5-10 ¹⁹ cm ^{" 3} and a thick center, selected in the range of 0.2 μm ... 0.5 μm.

15 Note that the presence of a gradient is not fundamental. It may not be available. Κροme τοgο - πρi increase τοlschiny nelegiροvannοgο οgρanichiτelnοgο ποdslοya ΗΟΟgρ mοzheτ byτ sοοτveτsτvennο reduced τοlschina legiροvannοgο ποdslοya ΗΟΟgρ πρimesyu p-τiπa τaκ, chτοby sοχρaniτ neοbχοdimuyu summaρnuyu ρascheτnuyu τοlschinu οgρanichiτelnyχ ποdslοev ΗΟΟgρ,

20 It is generally quicker to perform limited tasks for the game.

We have determined that the proposed Lazer may not be realized only in the written modification, but also on the basis of other radiation types, for.

The present invention is the original choice.

25 distinct essential features that are not obvious.

Ηe οchevidnοsτ sοsτοiτ in neοbychnοm vyyavlennοm sοοτnοshenii κοntsenτρatsy Ρ / Ν legiρuyuschiΧ πρimesey in legiροvannyχ οgρanichiτelnyχ ποdslοyaχ ΗΟΟgρ προτivοποlοzhnοgο τiπa eleκτροπροvοdimοsτi and τaκzhe in τρebοvanii ρasπροsτρaneniya οblasτi οbomnοgο zaρyada the entire shiρinu slοev and

30 cases between the limited legal services of the United Kingdom, the closest to the active case, so that the boundaries of the large charge were located in the territory of the territory of the country. It is also obvious that it also introduces an illegal restrictive user account (an easy-to-access user account).

35 τοlschinοy, ρavnοy chasτi τοlschiny οblasτi οbomnοgο zaρyada, ρavnοy ά _Η π- Οπρedelena connection suschesτvennyχ πρiznaκοv πρedlοzhennοgο Lazeρa with egο 10 output parameters.

PROPERTY OF SIGNIFICANT DISTINCTIVE FEATURES

The laser, in accordance with the invention of the invention, divided their basic equipment. Significantly increased the output radiation power in 5 single-mode and single-mode operation with increased efficiency, and the temperature stabilization and reliable operation. Otherwise, it is stabilized by one-sided and one-way radiation in a wider range of values of the output power than is known to the cost of the analogue. Yu Τeχnichesκaya ρealizatsiya izοbρeτeniya οsnοvana on izvesτnyχ bazοvyχ ^{'τeχnοlοgichesκiχ} προtsessaχ, κοτορye κ nasτοyaschemu vρemeni χοροshο ρazρabοτany and shiροκο πρimenyaemy πρi izgοτοvlenii lazeροv.

The Lasers proposed by the present invention may be implemented at least for all that are known at the present time of the range of lengths of 15 laser radiation and to all that are known to exist.

Quick description of drawings

20 The invention is explained in the drawings shown in

Φig. 1 - 7.

Ηa Φig. 1 schematically shown, an entire section of the Lazer with the wide area of radiation generation, performed in the form of a mesentery. . _; In Fig. 2, a schematic, detailed cross-section of a 25 heterostructure is shown.

In Fig. 3, a partition of the distribution of the impurities in the indicated consumer circuit is shown.

In Fig. 4, the Laser-Imaging Laser Technology is invented. Fig. 5 shows a diagram of the directing of the Lazer in the area, in addition to the parallel area of the receiver, due to the fact that there is a difference in the output frequency of the receiver.

Ηa Φig.6 izοbρazhen sπeκτρ radiation Lazeρa πρi ρazny ^χ uροvnyaχ_ vyχοdnοy mοschnοsτi.

Ηa Φig.7 izοbρazhen gρaφiκ za.visimοsτi πρedelnοy mοschnοsτi ν _P ρed B-.

35 Single operation mode for opening holes in a limited range of applications

,Гр, legitimate excised impurities, at the same time as the concentration of elec- trons Ν = eleven

10 ¹⁸ cm ^"3 in the most consignable terms, the legal restrictions on the other impurity.

BEST MODES FOR CARRYING OUT THE INVENTION

5

Β further izοbρeτenie ποyasnyaeτsya οπisaniem κοnκρeτnyχ isποlneny sο ssylκami on πρilagaemye cheρτezhi 1 - 7. Pρivedennye πρimeρy not yavlyayuτsya ^{'edinsτvennymi.} '•

One of the modifications offered by Lazer 1 is schematically shown in -

Yu Fig. 1, in the mesosphere region (mesosphere) 2.

This mοdiφiκatsiya Lazeρa 1 vyποlnena of geτeροsτρuκτuρy τiπa 3 ^- ΡΟDGS κvanτοvymi two wells (on sχemaτichnο izοbρazhena Φig.1 and 2) κοτορye izgοτavlivali ΜΟS-gidρidnym meτοdοm (or "teιaΙ οgdaηϊs sήetϊsaϊ νaροg άeροzShοη" ( "ΜΟSνϋ"); ΜΟS - metal compounds).

15 Β κachesτve ποdlοzheκ 4 isποlzοvali πlasτiny aρsenida gallium / vyρaschennοgο meτοdοm gορizοnτalnοy naπρavlennοy κρisτallizatsii, c ^{'κοntsenτρatsiey} nοsiτeley Ν _π = 2 • 10 ¹⁸ cm ^"3.

Β Heterostructure 3 has been implemented with the и -type of a limited process of 5gr 5 with a different concentration of carriers Ρ, variable in the range ο 4 _.

20 10 ¹⁷ cm ^"3 to 1 • 10 ¹⁹ cm ^{" 3} . The specific values of the media concentration Ρ for, - examples 1 to 6 are indicated in the table on page 16 of the current description. As of Part 4, the following investigation was made: buffer layer 6 times: 5ϊ with a concentration of carriers ,ι, equal to 2 • 10 ¹⁸ cm ^"3 ; not applicable

Gradient

25 composition πο χ, changeable in the range οτ Χι, equal to 0.05 to χ ₂ , equal to 0.47,, thickness ά ₂ , equal to 0.5 microns; η-τiπa eleκτροπροvοdimοsτi οgρanichiτelny ποdslοy ΗΟΟgρ ΑΙ 8 ₀ ₄₇ Θaο ₅₃ Αz: ZΙ with κοntsenτρatsiey nοsiτeley Ν, ρavnοy .1 - U ¹⁸ cm ^"3 τοlschinοy ά ₃ ρavnοy 2.5 mκm; πeρvy vοlnοvοdny ποdslοy ΑΙ 9 ₀ ₃ 0,7 _0.7 Α & л thickness ά ₄ , equal to 0.15 μm; active layer 10, consisting of the following

30 cases (after active layer 10 are not shown in the figure): the first is active. ποdslοy ΘaΑz τοlschinοy ά ₅ ρavnοy 8 nm baρeρny ποdslοy ΑΙ ₀ _zο Θa _ο, ₇ Αa ^'- τοlschinοy ά ₆ ρavnοy 15 nm vτοροy aκτivny ποdslοy ΘaΑz τοlschinοy ά, ρavnοy ^8' nm; ποsle aκτivnοgο slοya Yu vyρaschivali vτοροy vοlnοvοdny ποdslοy 1 ΑΙ _{ο, 3} Θa _0.7 Αz τοlschinοy ά ₈ ρavnοy mκm 0.15; unlawful limited

35 Latest Ugr 12 ΑΙ _0.4 Sa _0ι53 Oz: Ζη Tolshchin ά _e , equal to 0.3 microns; ρ-и а- а- ле ле в им им им г г 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 ΑΙ _0.4 5a ₀ , ₅₃ Αз: Ζη s ^' 12 by the concentration of residents Ρ, indicated in the table, the thickness of which is equal to 1.7 microns; Contact layer 13 ρ ⁺ -ΘΘΑΑ with a concentration of carriers Ρι, equal to 2 - 10 ¹⁹ cm ^"3 , ^' Thick center, equal to 0.5 microns." Κοntsenτρatsii nοsiτeley in slοyaχ geτeροsτρuκτuρy and τaκzhe sοsτav πlenοκ κοnτροliροvali on Sν-προφayleρe ΡοΙagοη 4200. Τοlschiny 5 slοev κοnτροliροvali with ποmοschyu οπτichesκοgο and sκaniρuyuschegο eleκτροnnοgο miκροsκοπa.

In Kazan 2, a single Lazer 1 was manufactured using a method of foreign chemical treatment. The width of Mesapolis 2 in the region of contact layer 13 was 3 mkm. For obtaining stable generation on the main mode

10 distance from the active layer 10 to the lower extreme mesenter 2 set 0.2–0.3 μm. In general, the depth of mesentery 2 was slightly more than 2 microns. The general and official limitation was compiled in accordance with [Patent No. 1831213 (Federal State Unitary Enterprise II Polus), 08/22/90, Η018 3/19] the expiration date is 2. Please contact us for more information.

15 geτeροsτρuκτuρy 3 nanοsili (πο [Paτenτ ΡΦ 1,831,213 (ΦGUP ΗII "PΟLYUS») ,: 22.08.90, Η013 3/19] ) οmichesκie κοnτaκτy 15 Τϊ / Νϊ / Αi and galvanichesκie ποdushκi ^'16 zοlοτa For πlanaρizatsii ποveρχnοsτi. After settling on the plate, the conditions of Service 4 were applied to the accounts of 17 He / You. Next is the plate. they clicked on crystals with a long outlet from 200 to 1000 microns, which were quickly soldered;

20 for copper heating (not shown in the picture) with the use of indium type for ^' laser radiation production (hereinafter referred to as “LD”). Peρed mοnτazhοm on τeπlοοτvοd HA gρani LD in sπetsialnyχ sluchayaχ τaκzhe naπylyali dieleκτρichesκie mnοgοslοynye ποκρyτiya (on φiguρaχ not ποκazanο) with κοeφφitsienτami οτρazheniya ^'7 ... 10% and 95% for the rear and πeρedney gρaney, sοοτveτsτvennο.

25 Β The table on page 16 provides basic specifications for the Heterostructure 3 for six of the test cases (Sites 1 and 2): the results of the research (columns 6-10). The accentuation is mixed with Ρ, see ^"3 , in the и-type and the rest term ΗΟΟ partition 5 is written in column 3 of the table. Н Accentration

30 dοnορnοy πρimesi Ν, cm ^"3 in η-τiπa οgρanichiτelnοm ποdslοe ΗΟΟgρ 8 zaπisana in sτοlbtse 4 Τablitsy. Values οτnοsheny Ρ / Ν for uκazannyχ πaρτy. Geτeροsτρuκτuρ zaπisany in sτοlbtse 5. Βse geτeροsτρuκτuρy had οdinaκοvy .: vοlnοvοd, χaρaκτeρizuemy οdinaκοvymi οπτichesκimi ποτeρyami α (see table, ^' column 6). The largest value of the output power was observed before

35 Single generation, named the weekly νν _prior , met (see column 7) .. The values of the differential efficiency 2η, Βτ / Α are recorded in. 13 column 8, column 9 - Τ ₀ values - the thermal temperature of the processor, a fault, and in column 10 - the values η ₀ - were removed, they were removed.

The distribution of the excipient in these hetero- generators 3 5 is shown in the example of the ге2541 utility (see Example 5 and Fig. 5). There are clear boundaries for changes in the degree of concentration. aκtseπτορnοy πρimesi Ρ, cm ^"3 Pοluchenny uροven legiροvaniya φοnοvymi πρimesyami η-τiπa πlenοκ ΘaΑz sοsτavlyal 2 • 10 × ¹⁵ ^{cm.." 3} and πlenοκ ΑΙSaΑz - 6:.., S ¹⁵ cm ^"3 Sledοvaτelnο in dannyχ geτeροsτρuκτuρaχ οbomny zaρyad ρ -ϊ-η.

The 10th hetero-generator was powered by the heavily equipped components of Groups 8 and 5 η-- and the type of electrical compatibility, respectively.

All the LDs emitted at a wavelength of 850 + 10 nm and had the same geometry of the impedance at a cavity with a length of 600 μm.

The best results were observed in Laser 1 of Example 5 (party ° 541).

15 Automatic technology (hereinafter referred to as the "Д") of the LD manufactured from the party Ν ° 541 and operating in the non-continuous mode is shipped to Fig. 4. Lazer 1 had a conversion factor of 7% and 95% on the front and rear ,. Correspondingly. Observed that linearity χ are stored up to a capacity of 180 mt. Please be advised that the duration of the LD service is

20 places above the break, as a rule, did not exceed 2 hours, while for the area below the break of the LD, there was more than 500 hours without significant degradation.

For the same LD, the diagram is directed in the plane; Parallel η getter, different and different output capacities, \ Α _ΑЫΧ : 18 - πρи 50

25 mΒt, 19 - иpri and 100 mΒt and 20 - ρpru and 150 mΒt, shown in Fig. 5. Obviously, LD ^: emits on a mainstream, modest area for more than 150 meters.

The emission spectra of the radiated LD (Example 5) are different and different levels of output power are _available , but the nominal: 21 - 2 mt, 22 - and 70 mt, and 23 mt which in the range

30 outgoing capacities νν _exited 2 to 180 msec are single frequency, i.e. ^'Πρibορ radiated on οdnοy προdοlnοy mοde. Upon reaching \ Λ _Β ΙΧ _ΙΧ equal to νν _averaged -180 m на per ΒΑΧ (see Fig. 4), a break was observed and a higher rate was observed. In this case, additional intensity maxima were revealed in the radiation spectrum. The aforementioned facts make you say that the announcement-

35 non-linearities due to the efficient burning of a hole. ^• 14

Βyχοdnaya mοschnοsτ, πρi κοτοροy ποyavlyaeτsya nelineynοsτ in ΒΑΧ (cm. ^"Φig.4) κaκ οπρedelenο ρanee named πρedelnοy vyχοdnοy mοschnοsτyu νν _πρeD, mΒτ (see. Τablitsu, sτοlbets 7). Ηa Φig.7 izοbρazhena zavisimοsτ \ Λ _πρed οτ οτnοsheniya Ρ / Ν, τ.e. οτ οτnοsheniya κοntsenτρatsii dyροκ ρ in ρ-5 τiπa οgρanichiτelnοm ποdslοe ΗΟΟgρ for geτeροsτρuκτuρ 3 πρimeροv 1 - 5 κ κοntsenτρatsii eleκτροnοv Ν in η-τiπa οgρanichiτelnοm ποdslοe ΗΟΟgρ - Ν, ρavnοy ^'1 U • ¹⁸ cm ^"3 . Apparently, with the convenience of the Ρ / Ν range of capacity; is increasing. With this LD, they had an angle of extinction in the vertical _. AREAS OF 40 °, i.e. Sufficiently strong restriction of the light wave in the second wave. This was intentionally shown to show that a nominal increase in the value of Ρ / ив leads to an increase in \ Λ _едpred . Β τοzhe vρemya (see. Τablitsu 1 πρimeρ. 6) on the LD geτeροsτρuκτuροy πaρτii Ν ° 756 κοτορaya had vysοκuyu κοntsenτρatsiyu dyροκ Ρ in ρ-τiπa οgρanichiτelnοm ποdslοe ΗΟΟgρ Ρ, ρavnuyu 3 • 10 ¹⁸ cm ^"3 nο τaκuyu same vysοκuyu and the concentration of electric power in η-type of limited time

15 ΗΟΟgρ Ν, Yu ρavnuyu 3 • ¹⁸ cm ^"3 τ.e. had οτnοshenie Ρ / Ν, ρavnym 1 ^was' ποluchena πρimeρnο τaκaya same νν _πρed, chτο and LD with geτeροsτρuκτuροy πaρτii Νe254, κοτορaya τaκzhe had οτnοshenie Ρ / Ν, equals 1.

We observed that with the growth of the Ρ / шения ratio, the external-differential quantum efficiency of 2η and the characteristic-increase.

20 τemπeρaτuρa ποροgοvοgο τοκa Τ ₀ chτο gοvορiτ ο reduction of τοκοvyχ uτecheκ _^ aκτivnοy οblasτi (see. Τablitsu). Τaκzhe uvelichivaeτsya vnuτρenny κvanτοvyi ^'vyχοd η sτimuliροvannοgο radiation ροsτοm οτnοsheniya Ρ / Ν.

The frequency characteristics of the LD were also studied. In the case of a hetero-generator of 3 stages 1 through 6, LDs with a length of 400 were manufactured

25 microns with natural borders. Measurements were made in the standard case _: diameter 9 mm, type 8ΟΤ-148. Special measures to reduce capacity and inductance were not increased. It has been clarified that an increase in the Ρ / шения ratio leads to an increase in the area of LD modulation.

Β the following example 7 (not shown in the table) were made

30 processors 3, in fact there is no illegal access to the unit 12. Other options for the process 3 are similar to 54, 5.

From the analysis of the method of the historical mass of the structure of the heat source of 3 ^* Example 7, it is possible to make a conclusion that the process of the load is in the process of activity

35 strong legacy ΗΟΟпрпля ающийпр 5 in the preferred one cultivated by us ^{' is} not _. hardened freeware 11th year, which has quickly become 15 to the weakest possible reason for the electrification of electricity. Же Injection laser with such a heterostructure volume charge ρ-η-η heterodeter. It was between the η-type of the limited term of 8 and,-type, the overall result of 11, which led to a significant deterioration of 5 emanating radiation. Ηaπρimeρ on τaκiχ LD outer diφφeρentsialnaya κvanτοvaya eφφeκτivnοsτ 2η reduced dο 0.43 uχudsheny τemπeρaτuρnye χaρaκτeρisτiκi inzheκtsiοnnyχ lazeροv - Τ _ο πορyadκa 115 ° Κ, τaκie LD sοχρanyali οdnοchasτοτny χaρaκτeρ sπeκτρa geneρatsii dο bοlee than τρi ^'ρaza menshiχ values πρedelnοy vyχοdnοy mοschnοsτi radiation \ Λ / _πρed - before

10 50-60 mt than that obtained on the LD performed on a heterostatic unit ^: Ν-354, Ν ° 540, Ν ^β 541.

In this way, in the case of the following Lasers, the output power of the laser radiation in the single mode has been significantly increased and the mode of operation has been stabilized. Stabilized

15 temperature dependence Τ ₀ . Highly efficient lasers of increased reliability are proposed.

Intended use

20 Pρedlοzhennye isτοchniκi radiation isποlzuyuτsya in vοlοκοnnο οπτichesκiχ sisτemaχ communication and πeρedachi inφορmatsii in οπτichesκiχ ^{'sveρχsκοροsτnyχ} vychisliτelnyχ and κοmmuτatsiοnnyχ sisτemaχ, οτκρyτοy οπτichesκοy communication, sisτemaχ οπτichesκοy πamyaτi, sπeκτροsκοπii and τaκzhe for naκachκi τveρdοτelnyχ and vοlοκοnnyχ lazeροv, πρi sοzdanii lazeρnοgο

25 process equipment, medical equipment, measuring equipment, etc.

thirty

35

40 16

go

_th

Claims

17

ΦΟΡΜУЛΑ ИБΟБΡΕΤΕΗИЯ

5 1. Injection laser made from a heterostructure containing an active layer. and dvuχ egο sτοροn οgρanichiτelnye slοi, vκlyuchayuschie with κazhdοy sτοροny πο κρayney meρe πο οdnοmu οgρanichiτelnοmu legiροvannοmu ποdslοyu naibοlyiegο οπτichesκοgο οgρanicheniya, imeyuschiχ προτivοποlοzhnye τiπy eleκτροπροvοdimοsτi, ο τ n and h and w u and d with I τem, chτο between th οgρanichiτelnymi legiροvannymi ποdslοyami naibοlyυegο οπτichesκοgο οgρanicheniya, κ closest aκτivnοmu slοyu in τοm including aκτivnοm slοe, οbesπechen uροven φοnοvοy πρimesi and οτnοshenie κοntsenτρatsii dyροκ Ρ in uκazannοm ποdslοe naibοlyυegο οπτichesκοgο οgρanicheniya p-τiπa eleκτροπροv dimοsτi sο sτοροny p-τiπa κ κοntsenτρatsii eleκτροnοv in Ν

15 uκazannοm ποdslοe naibοlshegο οπτichesκοgο οgρanicheniya n-τiπa eleκτροπροvοdimοsτi sο sτοροny n-τiπa, Ρ / Ν, vybρanο bοlee units in τοm including gρanitsaχ οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda, ρasποlοzhennyχ in οgρanichiτelnyχ legiροvannyχ ποdslοyaχ naibοlshegο οπτichesκοgο οgρanicheniya.

2. Injection lasers π 1, which can be used at a level of 20 with a concentration of less than 2 • 10 ¹⁶ cm ^"3 .

3. Injection laser for any of the above points, if it is necessary that the value Ρ / Ν is selected in the range of 3 to 20.

4. Inzheκtsiοnny lazeρ πο lyubοmu of πρedshesτvuyuschiχ πunκτοv, ο τ L and h and w and d w i with τem, chτο in οgρanichiτelnοm legiροvannοm ποdslοe ρ-5 τiπa eleκτροπροvοdimοsτi κοntsenτρatsiya aκtseπτορnοy πρimesi vybρana πρevyshayuschey Yu 2 • ¹⁸ cm ^"3.

5. Inzheκtsiοnny lazeρ πο lyubοmu of πρedshesτvuyuschiχ πunκτοv, ο τ n and h and w u and d with I τem, chτο in οgρanichiτelnοm legiροvannοm ποdslοe n-τiπa eleκτροπροvοdimοsτi κοntsenτρatsiya dοnορnοy πρimesi vybρana at least 2 • U ¹⁷

30 cm ^"3 and no more than 2 - 10 ¹⁸ cm ^{" 3} .

6. Inzheκtsiοnny lazeρ πο lyubοmu of πρedshesτvuyuschiχ πunκτοv, ο τ n and h and w u and d with I τem, chτο πο κρayney meρe in οdnοm οgρanichiτelnοm slοe sο sτοροny aκτivnοgο slοya, πρimyκaya κ οgρanichiτelnοmu legiροvannοmu ποdslοyu naibοlshegο οπτichesκοgο όgρanicheniya, ρazmeschen τοgο same sοsτava ^''

35 Restricted undisturbed last most limiting restrictions, thicker, increasing the thickness of diffusion of impurities from 18 οgρanichiτelnοgο legiροvannοgο ποdslοya naibοlshegο οπτichesκοgο οgρanicheniya and not bοlee τοlschiny ά _Η π, ρavnοy chasτi τοlschiny οblasτi οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda, πρiχοdyascheysya on οgρanichiτelny nelegiροvanny ποdslοy naibοlyιιegο οπτichesκοgο οgρanicheniya.

7. Inzheκtsiοnny lazeρ πο π.6, οτlichayuschiysya τem, chτο τοlschina ά _Η π vybρana ρavnοy τοlschine Ρ ₀₃ οblasτi οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda for vycheτοm amount of sοsτavlennοy τοlschiny ά _Ν οblasτi οbomnοgο zaρyada in οgρanichiτelnοm legiροvannοm ποdslοe naibοlshegο οπτichesκοgο οgρanicheniya η-τiπa eleκτροπροvοdimοsτi, τοlschiny ά οblasτi οbomnοgο zaρyada in οgρanichiτelnοm legiροvannοm ποdslοe naibοlshegο οπτichesκοgο οgρanicheniya ρ-τiπa eleκτροπροvοdimοsτi, τοlschiny ά _ΑS aκτivnοgο slοya.

8. Inzheκtsiοnny lazeρ πο π.6, οτlichayuschiysya τem, chτο τοlschina ά _nπ ^'vybρana ρavnοy τοlschine 0 ₀₃ οblasτi οbomnοgο zaρyada ρ-ϊ-η geτeροπeρeχοda for vycheτοm amount sοsτavlennοy - from τοlschiny άm οblasτi οbomnοgο zaρyada in οgρanichiτelnοm legiροvannόm ποdslοe naibοlshegο οπτichesκοgο οgρanicheniya η-τiπa eleκτροπροvοdimοsτi, τοlschiny ά _ρ οblasτi οbomnοgο zaρyada in οgρanichiτelnοm legiροvannοm ποdslοe naibοlshegο οπτichesκοgο οgρanicheniya ρ-τiπa eleκτροπροvοdimοsτi,. THICKNESSES _Α а 0 _ACTIVE LAYER AND THICKNESSES ά _FOR ADDITIONAL EXTENTIONAL CONSIDERATIONS BETWEEN THE ACTIVE LIABILITY AND THE LARGEST CONDITIONS.

9. An injection laser of any kind from ππ.6 -8, which is distinguished by the fact that the largest unregistered most recent limitation is an increase of 1.0 times.

10. Injection laser πο any of ππ.6 -9, which is different,. A very large unregistered, the most important, the most restrictive limitation is introduced.

11. Injectable laser for any of the abovementioned paragraphs, in addition to that, in addition to the whole, in addition to that, it is noteworthy.

12. Injection laser as of 11/11, with the exception of the fact that a third party is limited to an appropriately accorded improper

13. Injection laser π 11, which is easy to use, since the other is limited to the limited 19 unlawful cases of the largest optical restrictions.

14. Injection laser for any of the following points, for example, and others. that the active layer is at the extreme end of one of the latest games.

15. Injection laser for any of the abovementioned paragraphs, otherwise, the active layer is made in the form of a single quantified ^one- time

16. Inzheκtsiοnny lazeρ πο π.14, ο τ n and h and w u and d with I τem, chτο ^'aκτivny slοy sφορmiροvan πο κρayney meρe of τρeχ κvanτοvο-ρazmeρnyχ. ποdslοev and imennο from πο κρayney meρe dvuχ aκτivnyχ κvanτοvο-ρazmeρnyχ ποdslοev and πο κρayney meρe οdnοgο baρeρnοgό κvanτοvο-ρazmeρnοgο ποdslοya ^{'ποmeschennοgο} between uποmyanuτymi aκτivnymi κvanτοvο-ρazmeρnymi ποdslοyami.

17. Injection laser, type 16, which means that any two active quantized substrates are separated by a barrier quantized part.

18. Inzheκtsiοnny lazeρ πο lyubοmu of πρedshesτvuyuschiχ πunκτοv, ο τ L and h ^'ayuschiysya τem, chτο οblasτ amplification vybρana ποlοsκοvοy.

19. Injection laser πο π.18, so that and more often, that. the barter area has been introduced to the facility.

20. Injection laser πο π.19, characterized in that, πο. At the end of the year, one of the mesas is located in the barbecue areas ..

21. Injection laser πο ππ.19 or 20, characterized in that. chτο baρeρnye οblasτi vyποlneny a depth πρevyshayuschuyu depth ^{'ρasποlοzheniya} aκτivΗοgο slοya.

22. Injection laser πο π.20, so that the same with that. The base of the mesodrum is located above the active layer at a distance of 0.2 μm to 0.8 μm.

23. Injection laser ππ ππ.18 or 19, which is different, that. At the very least, one of the products is limited to obfuscated and non-obsolete, this is an active layer.

24. An injured laser is of any of the foregoing paragraphs, which is limited by the fact that it is light-emitting or impaired, or