WO2002019433A2 - Trench schottky rectifier - Google Patents
Trench schottky rectifier Download PDFInfo
- Publication number
- WO2002019433A2 WO2002019433A2 PCT/US2001/026954 US0126954W WO0219433A2 WO 2002019433 A2 WO2002019433 A2 WO 2002019433A2 US 0126954 W US0126954 W US 0126954W WO 0219433 A2 WO0219433 A2 WO 0219433A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- face
- trenches
- adjacent
- trench
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 10
- 239000010936 titanium Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001286905A AU2001286905A1 (en) | 2000-08-31 | 2001-08-29 | Trench schottky rectifier |
EP01966385A EP1314207B1 (en) | 2000-08-31 | 2001-08-29 | Trench schottky rectifier |
DE60118217T DE60118217T2 (en) | 2000-08-31 | 2001-08-29 | SCHOTTKY RECTIFIER WITH DIG |
KR1020037002858A KR100765924B1 (en) | 2000-08-31 | 2001-08-29 | Trench schottky rectifier and method of forming the same |
JP2002524229A JP4855636B2 (en) | 2000-08-31 | 2001-08-29 | Trench schottky rectifier |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/653,084 US6707127B1 (en) | 2000-08-31 | 2000-08-31 | Trench schottky rectifier |
US09/653,084 | 2000-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002019433A2 true WO2002019433A2 (en) | 2002-03-07 |
WO2002019433A3 WO2002019433A3 (en) | 2002-12-05 |
Family
ID=24619436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/026954 WO2002019433A2 (en) | 2000-08-31 | 2001-08-29 | Trench schottky rectifier |
Country Status (9)
Country | Link |
---|---|
US (2) | US6707127B1 (en) |
EP (1) | EP1314207B1 (en) |
JP (1) | JP4855636B2 (en) |
KR (1) | KR100765924B1 (en) |
CN (1) | CN1286187C (en) |
AU (1) | AU2001286905A1 (en) |
DE (1) | DE60118217T2 (en) |
TW (1) | TW523933B (en) |
WO (1) | WO2002019433A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7902075B2 (en) | 2008-09-08 | 2011-03-08 | Semiconductor Components Industries, L.L.C. | Semiconductor trench structure having a sealing plug and method |
US7960781B2 (en) | 2008-09-08 | 2011-06-14 | Semiconductor Components Industries, Llc | Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method |
US8889528B2 (en) | 2008-09-08 | 2014-11-18 | Semiconductor Components Industries, Llc | Method for manufacturing a semiconductor component |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10063443B4 (en) * | 2000-12-20 | 2005-03-03 | Infineon Technologies Ag | Method for producing an electrode of a field effect controllable semiconductor device and field effect controllable semiconductor device |
US20060038223A1 (en) * | 2001-07-03 | 2006-02-23 | Siliconix Incorporated | Trench MOSFET having drain-drift region comprising stack of implanted regions |
US7291884B2 (en) * | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
US7009247B2 (en) * | 2001-07-03 | 2006-03-07 | Siliconix Incorporated | Trench MIS device with thick oxide layer in bottom of gate contact trench |
US7033876B2 (en) * | 2001-07-03 | 2006-04-25 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
US7002187B1 (en) * | 2003-06-09 | 2006-02-21 | Micrel, Inc. | Integrated schottky diode using buried power buss structure and method for making same |
US6977208B2 (en) * | 2004-01-27 | 2005-12-20 | International Rectifier Corporation | Schottky with thick trench bottom and termination oxide and process for manufacture |
US7238976B1 (en) * | 2004-06-15 | 2007-07-03 | Qspeed Semiconductor Inc. | Schottky barrier rectifier and method of manufacturing the same |
FR2880193A1 (en) * | 2004-12-23 | 2006-06-30 | St Microelectronics Sa | SCHOTTKY DIODE WITH VERTICAL BARRIER |
US7989881B2 (en) * | 2005-02-08 | 2011-08-02 | Nxp B.V. | Semiconductor device structure with a tapered field plate and cylindrical drift region geometry |
US7948029B2 (en) | 2005-02-11 | 2011-05-24 | Alpha And Omega Semiconductor Incorporated | MOS device with varying trench depth |
US8093651B2 (en) * | 2005-02-11 | 2012-01-10 | Alpha & Omega Semiconductor Limited | MOS device with integrated schottky diode in active region contact trench |
US7671439B2 (en) * | 2005-02-11 | 2010-03-02 | Alpha & Omega Semiconductor, Ltd. | Junction barrier Schottky (JBS) with floating islands |
US7285822B2 (en) * | 2005-02-11 | 2007-10-23 | Alpha & Omega Semiconductor, Inc. | Power MOS device |
US8283723B2 (en) * | 2005-02-11 | 2012-10-09 | Alpha & Omega Semiconductor Limited | MOS device with low injection diode |
US8362547B2 (en) | 2005-02-11 | 2013-01-29 | Alpha & Omega Semiconductor Limited | MOS device with Schottky barrier controlling layer |
JP2006339508A (en) * | 2005-06-03 | 2006-12-14 | Sumitomo Electric Ind Ltd | Semiconductor device and its manufacturing method |
CN101361194B (en) * | 2005-12-27 | 2010-12-22 | 美商科斯德半导体股份有限公司 | Apparatus and method for a fast recovery rectifier structure |
US7602036B2 (en) * | 2006-03-07 | 2009-10-13 | International Rectifier Corporation | Trench type Schottky rectifier with oxide mass in trench bottom |
JP2008034572A (en) * | 2006-07-28 | 2008-02-14 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacturing method therefor |
US8159021B2 (en) * | 2008-02-20 | 2012-04-17 | Force-Mos Technology Corporation | Trench MOSFET with double epitaxial structure |
US7858506B2 (en) | 2008-06-18 | 2010-12-28 | Micron Technology, Inc. | Diodes, and methods of forming diodes |
IT1394649B1 (en) * | 2009-06-01 | 2012-07-05 | St Microelectronics Srl | PHOTODIODO WITH SCHOTTKY CONTACT ON THE WALLS OF PARALLEL TRINCEE AND ITS MANUFACTURING METHOD |
DE102009028248A1 (en) * | 2009-08-05 | 2011-02-10 | Robert Bosch Gmbh | A semiconductor device |
US9577079B2 (en) * | 2009-12-17 | 2017-02-21 | Infineon Technologies Ag | Tunnel field effect transistors |
JP2011199306A (en) * | 2011-06-03 | 2011-10-06 | Sumitomo Electric Ind Ltd | Semiconductor device and method of manufacturing the same |
CN102222701A (en) * | 2011-06-23 | 2011-10-19 | 哈尔滨工程大学 | Schottky device with groove structure |
CN103094100B (en) * | 2011-10-28 | 2015-09-30 | 比亚迪股份有限公司 | A kind of method forming Schottky diode |
CN103579368A (en) * | 2012-07-18 | 2014-02-12 | 朱江 | Groove schottky semiconductor device and preparation method thereof |
TWI511305B (en) * | 2012-11-01 | 2015-12-01 | Chip Integration Tech Co Ltd | Method of forming schottky rectifier device |
CN103022090A (en) * | 2012-12-27 | 2013-04-03 | 淄博美林电子有限公司 | High-efficiency high-voltage-resistant Schottky chip |
CN104124151B (en) * | 2014-07-14 | 2017-08-25 | 中航(重庆)微电子有限公司 | A kind of groove structure Schottky-barrier diode and preparation method thereof |
EP3067935A1 (en) * | 2015-03-10 | 2016-09-14 | ABB Technology AG | Power semiconductor rectifier with controllable on-state voltage |
JP7284721B2 (en) * | 2020-01-30 | 2023-05-31 | 株式会社豊田中央研究所 | diode |
CN113193053B (en) * | 2021-05-20 | 2023-11-07 | 电子科技大学 | Trench schottky diode with high forward current density |
JP2023079551A (en) * | 2021-11-29 | 2023-06-08 | Tdk株式会社 | schottky barrier diode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
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JPS5599774A (en) * | 1979-01-26 | 1980-07-30 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS562625A (en) * | 1979-06-20 | 1981-01-12 | Shindengen Electric Mfg Co Ltd | Manufacture of epitaxial wafer |
JPS6140841A (en) * | 1984-07-31 | 1986-02-27 | Miyazakiken | Porous moulded product of glass and its preparation |
EP0363552B1 (en) * | 1988-07-27 | 1993-10-13 | Tanaka Kikinzoku Kogyo K.K. | Process for preparing metal particles |
US4990988A (en) * | 1989-06-09 | 1991-02-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laterally stacked Schottky diodes for infrared sensor applications |
US4982260A (en) | 1989-10-02 | 1991-01-01 | General Electric Company | Power rectifier with trenches |
US5381026A (en) * | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
JP3297060B2 (en) * | 1990-09-17 | 2002-07-02 | 株式会社東芝 | Insulated gate thyristor |
JP2555475B2 (en) * | 1990-10-16 | 1996-11-20 | 工業技術院長 | Method for producing inorganic microspheres |
JPH05114723A (en) * | 1991-03-28 | 1993-05-07 | Murata Mfg Co Ltd | Schottky barrier semiconductor device and manufacture thereof |
US5262668A (en) | 1992-08-13 | 1993-11-16 | North Carolina State University At Raleigh | Schottky barrier rectifier including schottky barrier regions of differing barrier heights |
JP3173186B2 (en) * | 1992-10-08 | 2001-06-04 | 株式会社村田製作所 | Schottky barrier semiconductor device manufacturing method |
US5588983A (en) * | 1994-02-16 | 1996-12-31 | Murata Manufacturing Co., Ltd. | Production of copper powder |
JPH07263717A (en) * | 1994-03-23 | 1995-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Rectifying element and manufacture thereof |
US5609919A (en) * | 1994-04-21 | 1997-03-11 | Altamat Inc. | Method for producing droplets |
JP3329642B2 (en) * | 1995-04-20 | 2002-09-30 | 株式会社東芝 | Semiconductor device |
US5962893A (en) | 1995-04-20 | 1999-10-05 | Kabushiki Kaisha Toshiba | Schottky tunneling device |
US5705830A (en) * | 1996-09-05 | 1998-01-06 | Northrop Grumman Corporation | Static induction transistors |
JP3420698B2 (en) * | 1998-03-24 | 2003-06-30 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP2001068688A (en) * | 1999-08-26 | 2001-03-16 | Fuji Electric Co Ltd | Manufacture of schottky barrier diode and schottky barrier diode |
TW467779B (en) * | 1999-11-12 | 2001-12-11 | Mitsui Mining & Smelting Co | Nickel powder and conductive paste |
US6593620B1 (en) * | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
US6420768B1 (en) * | 2000-12-15 | 2002-07-16 | General Semiconductor, Inc. | Trench schottky barrier rectifier and method of making the same |
US6580141B2 (en) * | 2001-06-01 | 2003-06-17 | General Semiconductor, Inc. | Trench schottky rectifier |
-
2000
- 2000-08-31 US US09/653,084 patent/US6707127B1/en not_active Expired - Lifetime
-
2001
- 2001-08-29 JP JP2002524229A patent/JP4855636B2/en not_active Expired - Lifetime
- 2001-08-29 WO PCT/US2001/026954 patent/WO2002019433A2/en active IP Right Grant
- 2001-08-29 CN CNB018150403A patent/CN1286187C/en not_active Expired - Lifetime
- 2001-08-29 DE DE60118217T patent/DE60118217T2/en not_active Expired - Lifetime
- 2001-08-29 KR KR1020037002858A patent/KR100765924B1/en active IP Right Grant
- 2001-08-29 EP EP01966385A patent/EP1314207B1/en not_active Expired - Lifetime
- 2001-08-29 AU AU2001286905A patent/AU2001286905A1/en not_active Abandoned
- 2001-08-31 TW TW090121685A patent/TW523933B/en not_active IP Right Cessation
-
2002
- 2002-01-10 US US10/043,633 patent/US6518152B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7902075B2 (en) | 2008-09-08 | 2011-03-08 | Semiconductor Components Industries, L.L.C. | Semiconductor trench structure having a sealing plug and method |
US7960781B2 (en) | 2008-09-08 | 2011-06-14 | Semiconductor Components Industries, Llc | Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method |
US8106436B2 (en) | 2008-09-08 | 2012-01-31 | Semiconductor Components Industries, Llc | Semiconductor trench structure having a sealing plug |
US8372716B2 (en) | 2008-09-08 | 2013-02-12 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer |
US8889528B2 (en) | 2008-09-08 | 2014-11-18 | Semiconductor Components Industries, Llc | Method for manufacturing a semiconductor component |
US9000550B2 (en) | 2008-09-08 | 2015-04-07 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
KR100765924B1 (en) | 2007-10-11 |
DE60118217T2 (en) | 2006-12-28 |
US6518152B2 (en) | 2003-02-11 |
DE60118217D1 (en) | 2006-05-11 |
JP4855636B2 (en) | 2012-01-18 |
EP1314207A2 (en) | 2003-05-28 |
CN1286187C (en) | 2006-11-22 |
US6707127B1 (en) | 2004-03-16 |
EP1314207B1 (en) | 2006-03-22 |
CN1498425A (en) | 2004-05-19 |
AU2001286905A1 (en) | 2002-03-13 |
KR20030038718A (en) | 2003-05-16 |
TW523933B (en) | 2003-03-11 |
US20020066926A1 (en) | 2002-06-06 |
WO2002019433A3 (en) | 2002-12-05 |
JP2004521480A (en) | 2004-07-15 |
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