WO2002005340A1 - Resine reticulee et procede de fabrication d'oxydes utilisant cette resine reticulee - Google Patents
Resine reticulee et procede de fabrication d'oxydes utilisant cette resine reticulee Download PDFInfo
- Publication number
- WO2002005340A1 WO2002005340A1 PCT/FR2001/002189 FR0102189W WO0205340A1 WO 2002005340 A1 WO2002005340 A1 WO 2002005340A1 FR 0102189 W FR0102189 W FR 0102189W WO 0205340 A1 WO0205340 A1 WO 0205340A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ceramic
- alkoxide
- glass
- manufacturing
- crosslinked resin
- Prior art date
Links
- 239000011347 resin Substances 0.000 title claims abstract description 52
- 229920005989 resin Polymers 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 23
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims abstract description 22
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims abstract description 22
- -1 silicon alkoxides Chemical class 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims abstract description 11
- 239000004312 hexamethylene tetramine Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 229960004011 methenamine Drugs 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 19
- 150000004703 alkoxides Chemical class 0.000 claims description 14
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 5
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 150000007942 carboxylates Chemical class 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 description 9
- 238000005119 centrifugation Methods 0.000 description 3
- SHZIWNPUGXLXDT-UHFFFAOYSA-N ethyl hexanoate Chemical compound CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-M 2-ethylhexanoate Chemical compound CCCCC(CC)C([O-])=O OBETXYAYXDNJHR-UHFFFAOYSA-M 0.000 description 1
- 206010019345 Heat stroke Diseases 0.000 description 1
- 208000007180 Sunstroke Diseases 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Definitions
- the field of the invention is that of thin layer oxides and more specifically oxides in the form of glass or ceramic obtained by sol gel processes.
- the sol gel process makes it possible, from a colloidal solution based on metal alkoxides or silicon alkoxide, to manufacture powders or thin layers of oxides in the form of glass or ceramic. More precisely, the alkoxides are dissolved in a solvent, their hydrolysis leads to the condensation of polymer networks of oxides and hydroxides. However, it is not easy to control the rate and kinetics of hydrolysis when it comes to the synthesis of complex phases containing a large number of elements with different properties.
- the cations are dissolved in a solution where polymerization (or maturation) is caused by the reaction of two organic compounds: acetylacetone (ACAC) and hexamethylenetetramine (HMTA). More precisely these two compounds brought into contact with hot acid lead to a polymeric species.
- the assembly thus formed is therefore a binder comprising grains of metal oxides.
- This resin can then be deposited on a substrate, to be brought to high temperature and lead to obtaining a ceramic in a thin layer.
- the resin deposited on the substrate is first of all brought to a calcination temperature of the order of 500 ° C. During this operation, the solvent is evaporated and certain chemical species are calcined to obtain amorphous oxides.
- a rapid annealing operation is then carried out at approximately 700 ° C. in order to obtain the desired crystalline phase from the corresponding ceramic.
- the invention proposes to use a crosslinked resin, which can be calcined subsequently so as to reduce the stresses caused during this heating for the manufacture of ceramic or glass.
- this crosslinked resin makes it possible to obtain very direct ceramic patterns of very small dimensions compared to the solutions of the prior art.
- the resin disclosed in patent application No. 431999 can advantageously be exposed by ultraviolet radiation to result in a crosslinked resin whose performance is improved.
- the invention more specifically relates to a crosslinked resin characterized in that it comprises a material obtained from the mixture of one or more simple or complex alkoxides of metal or silicon, acetylacetone and hexamethylene tetramine, then heating and exposure of said mixture.
- the simple metal alkoxides are of the titanium alkoxide or zirconium alkoxide type.
- the metal complex alkoxide is produced from lead carboxylate, from titanium alkoxide. and zirconium alkoxide.
- the mixture also comprises photo-initiating agents to increase the performance of the crosslinked resin obtained.
- These agents can in particular be radical photoinitiators of the Irgacure 184 or 1800 type from the company Ciba, or alternatively benzophenone or diphenylketone.
- the solvent is of type 2 ethyl hexanol and / or acetic acid.
- the subject of the invention is also a method of manufacturing a ceramic or a glass comprising:
- the exposure of the photosensitive resin by ultraviolet radiation leads to a denser gel and therefore to thicker layers of glass or ceramic oxides than according to the prior art.
- the substrate is glass.
- Another subject of the invention is a process for manufacturing ceramic or glass patterns on the surface of a substrate, characterized in that:
- the insolation is carried out through a mask so as to define insolated patterns and non-insolated patterns;
- Ceramic patterns are used in particular in ferroelectric memory type applications, integrated capacitors, pyroelectric detectors for infrared imaging or detection, or else piezoelectric sensors and microsystems, etc.
- the invention finally relates to components of the capacitor, piezoelectric transducer or ferroelectric memory type. obtained from the process for manufacturing a ceramic or a glass according to the invention.
- a photosensitive resin can be deposited on the surface of a ceramic layer previously produced on the surface of a substrate.
- the photosensitive resin is exposed through a substrate through a mask, then the insolated or non-insolated resin (depending on whether it is a negative or positive resin) is dissolved using a solvent.
- Figure 1 illustrates the different stages of a photolithography process for defining ceramic patterns. More precisely, FIG. 1a represents a layer of ceramic 1 on a substrate 0, covered with a layer of photosensitive resin 2.
- FIG. 1b shows diagrammatically the photosensitive resin 2 exposed through a mask 3. The exposed parts of the resin may become insoluble in certain solvents while the non-insoluble parts remain soluble in said solvents.
- a mask is thus defined which makes it possible, for example, to engrave the unmasked parts of FIG. 1c, with an acid of HCI / HF type in the case of a thin layer of PZT, to obtain the patterns illustrated in FIG.
- This chemical attack is isotropic and does not allow very fine resolution. Typically, it is difficult to produce patterns with a width of less than 10 ⁇ m.
- the crosslinked resin according to the invention allows ceramic or glass patterns to be produced directly, bypassing the need to use a masking resin and an isotropic etching process.
- FIG. 1a-1d illustrate the steps of the masking process according to the known art for defining ceramic patterns
- FIG. 2a-2c illustrate the process steps according to the invention for defining ceramic patterns
- FIGS. 3a and 3b illustrate a layer of metal oxides a few microns thick on a silicon substrate before and after sintering
- FIG. 4a and 4b illustrate patterns of metal oxides a few microns thick on a silicon substrate before and after sintering, obtained according to the invention.
- n zirconium butoxide 0.5 mole of n zirconium butoxide, and 0.5 mole of n titanium butoxide, are mixed at 60 ° C.
- a heavy carboxylate, 2 ethyl hexanoate is chosen to obtain a resin sufficiently viscous for deposition on the substrate leading to sufficient thickness.
- a solvent of heavy alcohol type for example 2 ethyl hexanol, to adjust the viscosity of said solution.
- a solution A is thus obtained based on lead, zirconium, titanium and ACAC oxides.
- HMTA hexamethylene tetramine
- Solutions A and B are brought together and are heated to form the resin.
- a PZT resin is thus obtained in which the grains of PZT oxides are taken up in a polymer matrix formed from HMTA and ACAC.
- the resin 11 formed in step 3 may typically have a kinematic viscosity of the order of 25 centistokes and be deposited by conventional methods of centrifugation or soaking on the surface of a substrate 01 ( Figure 2a).
- the resin is then exposed to the sun by ultraviolet radiation, typically at 335 nm, making it possible to densify the resin and make it insoluble in certain solvents, including 2 ethyl hexanol and / or dilute acetic acid.
- the exposure can advantageously be carried out through a mechanical mask 31 so as to define soluble patterns 11 and insoluble patterns 12 in the resin layer (FIG. 2b).
- the resin layers beyond a thickness of the order of 2 microns, deposited on plates of about 10 cm in diameter tend to fail during the sintering step due to the stresses generated between the layer and the substrate during the reduction in volume linked to the passage of a porous gel to a dense oxide .
- the substrate may tend to bend.
- the initial gel is denser due to ultraviolet radiation
- the surface under which these stresses are exerted is lower and these can relax on the edges of the pattern as illustrated in Figures 3 and 4 which respectively represent Figures 3a and 3b an oxide layer 13 of a few microns on a substrate silicon 03 before sintering and after sintering and Figures 4a and 4b of the oxide patterns 14 previously made a few microns thick on a silicon substrate 04 before sintering and after sintering.
- the ceramic patterns thus defined without deformation can have dimensions less than a few microns as well as dimensions of a few tens or even a few hundred microns.
- the photolithography, sunstroke and dissolution stages allow in particular the production of very fine patterns, unlike the isotropic chemical etching operations of ceramic of the prior art.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Glass Compositions (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01954061A EP1230674A1 (fr) | 2000-07-07 | 2001-07-06 | Resine reticulee et procede de fabrication d'oxydes utilisant cette resine reticulee |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR00/08920 | 2000-07-07 | ||
FR0008920A FR2811317B1 (fr) | 2000-07-07 | 2000-07-07 | Resine reticulee et procede de fabrication d'oxydes utilisant cette resine reticulee |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002005340A1 true WO2002005340A1 (fr) | 2002-01-17 |
Family
ID=8852265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2001/002189 WO2002005340A1 (fr) | 2000-07-07 | 2001-07-06 | Resine reticulee et procede de fabrication d'oxydes utilisant cette resine reticulee |
Country Status (4)
Country | Link |
---|---|
US (1) | US20020135001A1 (fr) |
EP (1) | EP1230674A1 (fr) |
FR (1) | FR2811317B1 (fr) |
WO (1) | WO2002005340A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8859051B2 (en) * | 2008-05-28 | 2014-10-14 | Mitsubishi Materials Corporation | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof |
GB2521405B (en) * | 2013-12-18 | 2015-12-02 | Dublin Inst Of Technology | A surface coating |
WO2018105264A1 (fr) * | 2016-12-08 | 2018-06-14 | 株式会社デンソー | Dispositif de climatisation de siège |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0431999A1 (fr) * | 1989-11-20 | 1991-06-12 | Thomson-Csf | Procédé de dépôt d'une composition céramique en couche mince, et produit obtenu par ce procédé |
WO1997033310A1 (fr) * | 1996-03-05 | 1997-09-12 | Symetrix Corporation | Procedes et appareil pour deposer des produits avec un appret |
US5846686A (en) * | 1991-11-14 | 1998-12-08 | Rohm Co., Ltd. | Agent for forming a fine pattern of ferroelectric film, and method of forming a fine pattern of ferroelectric film |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR431999A (fr) | 1911-02-01 | 1911-11-24 | Hermann Jacoby | Indicateur automatique de dégonflement pour bandages pneumatiques |
US4541855A (en) * | 1983-08-18 | 1985-09-17 | Corning Glass Works | Method of forming a glass or ceramic product |
US4957945A (en) * | 1988-04-01 | 1990-09-18 | The Goodyear Tire & Rubber Company | Preparation of ultra high molecular weight polyester |
US5100764A (en) * | 1989-12-26 | 1992-03-31 | Iowa State University Research Foundation, Inc. | Method of making patterned metal oxide films comprising a sol-gel of metal oxide and a photoactive compound |
US5494700A (en) * | 1994-04-05 | 1996-02-27 | The Curators Of The University Of Missouri | Method of coating a substrate with a metal oxide film from an aqueous solution comprising a metal cation and a polymerizable organic solvent |
JP2990088B2 (ja) * | 1997-02-28 | 1999-12-13 | 日本電気株式会社 | マンガン含有複合酸化物,およびその複合酸化物を用いた複合ぺロブスカイト化合物組成物の製造方法 |
US5944866A (en) * | 1997-09-26 | 1999-08-31 | Lucent Technologies Inc. | Fabrication including sol-gel processing |
US6002031A (en) * | 1998-09-04 | 1999-12-14 | International Business Machines Corporation | Metal alkoxyalkoxidecarboxylates and use to form films |
-
2000
- 2000-07-07 FR FR0008920A patent/FR2811317B1/fr not_active Expired - Fee Related
-
2001
- 2001-07-06 WO PCT/FR2001/002189 patent/WO2002005340A1/fr not_active Application Discontinuation
- 2001-07-06 EP EP01954061A patent/EP1230674A1/fr not_active Withdrawn
- 2001-07-06 US US10/069,951 patent/US20020135001A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0431999A1 (fr) * | 1989-11-20 | 1991-06-12 | Thomson-Csf | Procédé de dépôt d'une composition céramique en couche mince, et produit obtenu par ce procédé |
US5846686A (en) * | 1991-11-14 | 1998-12-08 | Rohm Co., Ltd. | Agent for forming a fine pattern of ferroelectric film, and method of forming a fine pattern of ferroelectric film |
US5846686B1 (en) * | 1991-11-14 | 2000-04-11 | Rohm Co Ltd | Agent for forming a fine pattern of ferroelectric film and method of forming a fine pattern of ferroelectric film |
WO1997033310A1 (fr) * | 1996-03-05 | 1997-09-12 | Symetrix Corporation | Procedes et appareil pour deposer des produits avec un appret |
Non-Patent Citations (3)
Title |
---|
KWON Y T ET AL: "Effect of sol-gel precursors on the grain structure of PZT thin films", MATERIALS RESEARCH BULLETIN,US,ELSEVIER SCIENCE PUBLISHING, NEW YORK, vol. 34, no. 5, 15 March 1999 (1999-03-15), pages 749 - 760, XP004179912, ISSN: 0025-5408 * |
SCHWARTZ R W ET AL: "EFFECTS OF ACETYLACETONE ADDITIONS ON PZT THIN FILM PROCESSING", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, 1995, XP000933537 * |
TOHGE N ET AL: "DIRECT FINE-PATTERNING OF PZT THIN FILMS USING PHOTOSENSITIVE GEL FILMS DERIVED FROM CHEMICALLY MODIFIED METAL-ALKOXIDES", JOURNAL OF MATERIALS SCIENCE. MATERIALS IN ELECTRONICS,CHAPMAN AND HALL, LONDON,GB, vol. 10, no. 4, June 1999 (1999-06-01), pages 273 - 277, XP000912742, ISSN: 0957-4522 * |
Also Published As
Publication number | Publication date |
---|---|
FR2811317B1 (fr) | 2002-10-11 |
US20020135001A1 (en) | 2002-09-26 |
EP1230674A1 (fr) | 2002-08-14 |
FR2811317A1 (fr) | 2002-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1761462B1 (fr) | Procede pour synthetiser des materiaux hybrides en oxyde metallique, et applications correspondantes | |
EP0961756B1 (fr) | Materiau polymerique inorganique a base d'oxyde de tantale, notamment a indice de refraction eleve, mecaniquement resistant a l'abrasion, son procede de fabrication, et materiau optique comprenant ce materiau | |
FR2493301A1 (fr) | Procede de production de verres de silice et procede de recouvrement en verres de silice a partir d'une solution d'un alcoolate d'un metal | |
WO1998034884A1 (fr) | Procede de preparation d'un materiau optique multicouches avec reticulation-densification par insolation aux rayons ultraviolets et materiau optique ainsi prepare | |
EP1969155B1 (fr) | Procede de realisation d'un revetement a base d'une ceramique oxyde conforme a la geometrie d'un substrat presentant des motifs en relief | |
EP1846344B1 (fr) | Procede de preparation de ceramiques oxydes a base de plomb, de titane, de zirconium et de lanthanide(s) | |
EP2232597A1 (fr) | Procede de fabrication de capteurs a couche de co-polymere p(vdf-trfe) et capteur correspondant | |
EP1756882B1 (fr) | Procede de preparation de materiaux piezoelectriques | |
US6074962A (en) | Method for the formation of silica-based coating film | |
EP0431999B1 (fr) | Procédé de dépôt d'une composition céramique en couche mince, et produit obtenu par ce procédé | |
WO2002005340A1 (fr) | Resine reticulee et procede de fabrication d'oxydes utilisant cette resine reticulee | |
WO2003024871A1 (fr) | Procede de preparation d'un sol stable de zircono-titanate de plomb et procede de preparation de films a partir dudit sol | |
KR100416760B1 (ko) | 졸겔공정을 이용한 지르콘산-티탄산 납 후막의 제조방법 | |
CH669951A5 (en) | Producing semiconductor strontium titanate particles | |
JP2000016812A (ja) | 金属酸化物膜の製造方法 | |
JP3969178B2 (ja) | 電子部品及びその製造方法 | |
Bhatt et al. | Feasibility study of RF sputtered ZnO film for surface micromachining | |
TW201011335A (en) | Anti-reflective surfaces and methods for making the same | |
JP3614195B2 (ja) | 酸化チタン膜付き球状粒子の製造方法 | |
JP2007316633A (ja) | マイクロレンズ構造を形成するためのゾルゲル膜を緻密化する方法およびマイクロレンズ | |
EP3391425B1 (fr) | Procede de preparation d'une solution sol-gel utilisable pour la preparation d'une ceramique de titanate de baryum dope par du hafnium et/ou par au moins un element lanthanide | |
JP2007126354A (ja) | 高誘電性薄膜用コーティング溶液及びこれを用いた誘電薄膜の製造方法、並びにこの製造方法により製造される誘電薄膜およびこの誘電薄膜を含むエンベッディドキャパシタ | |
JPH0766438A (ja) | 光電変換装置用基板の製造方法 | |
JP4868432B2 (ja) | メソポーラスシリカ構造体の製造方法、並びに、メソポーラスシリカ構造体及びそれを有する液晶素子 | |
KR101059750B1 (ko) | 고밀도의 압전 후막의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10069951 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2001954061 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2001954061 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2001954061 Country of ref document: EP |