WO2002001639A2 - Substrat et module - Google Patents

Substrat et module Download PDF

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Publication number
WO2002001639A2
WO2002001639A2 PCT/DE2001/002373 DE0102373W WO0201639A2 WO 2002001639 A2 WO2002001639 A2 WO 2002001639A2 DE 0102373 W DE0102373 W DE 0102373W WO 0201639 A2 WO0201639 A2 WO 0201639A2
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WO
WIPO (PCT)
Prior art keywords
substrate
module
frequency
flip
chip
Prior art date
Application number
PCT/DE2001/002373
Other languages
German (de)
English (en)
Other versions
WO2002001639A3 (fr
Inventor
Patric Heide
Alexander Dabek
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10031658A external-priority patent/DE10031658A1/de
Priority claimed from DE10041770A external-priority patent/DE10041770A1/de
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2002001639A2 publication Critical patent/WO2002001639A2/fr
Publication of WO2002001639A3 publication Critical patent/WO2002001639A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
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    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
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    • H01L2223/66—High-frequency adaptations
    • H01L2223/6688—Mixed frequency adaptations, i.e. for operation at different frequencies
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • H—ELECTRICITY
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1903—Structure including wave guides
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
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    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H05K1/0298—Multilayer circuits

Definitions

  • the invention relates to a substrate, a module using the substrate and a method for producing the module and an SMD component containing the module.
  • modules i. H. a modular component
  • high production technology requirements are placed, for example with regard to assembly or production under clean room conditions.
  • economic production is only possible to a limited extent.
  • SMD Surface Mounted Device
  • a high-frequency component has generally been based on an Al 2 0 3 ceramic substrate structured on one or two sides using thin-film technology.
  • Today's resolution of thin-film structured ceramics is in the range of a few ⁇ m, for thick-layer ceramics around 100 ⁇ m and for an etched thick layer around 5-10 ⁇ .
  • the so-called "LTCC" technology Low Temperature Cofired Ceramic
  • LTCC Low Temperature Cofired Ceramic
  • Multi-layer technology is also possible for the high frequency (HF) range up to approx. 2 GHz.
  • FC flip-chip
  • CSP chip-size packaging
  • WSP wafer scale packaging
  • An SMD automatic manufacturing machine is able to process FC / BGA ("Ball Grid Array") / CSP modules, for example for mobile telephones.
  • SMD assembly technology uses pad / pitch sizes of approx. 500 ⁇ mastered production technology; the placement accuracy is in the range of ⁇ 50 ⁇ m.
  • the pad sizes required in the maximum frequency range are in the range of 100 ⁇ m with an associated placement accuracy in the range of 5 ⁇ m. Mastering these techniques is, however, very complex and currently not yet possible in large-scale production.
  • a high-frequency module or a high-frequency substrate can also be installed in or on a housing. It is disadvantageous here that the assembly process is relatively complicated, that the standard housing that is generally used is not optimal, and that many external elements are necessary as a bias circuit.
  • the substrate has at least a first insulating layer, a high-frequency structural layer and a low-frequency structural layer.
  • the insulating layer is intended to electrically isolate the two structural layers from one another.
  • the high-frequency structure layer contains at least one high-frequency distribution network.
  • a voltage signal can be fed into the low-frequency structural position, in particular for the power supply.
  • Both the high-frequency structure layer and the low-frequency structure layer can contain active and passive electrical and / or electronic components, for example a resistor, a capacitor, a coil or else more complex elements such as Resonant circuits, waveguides or a microelectronic circuit.
  • a structure can also be used exclusively for electrical conduction, e.g. B. for connecting differently arranged vias.
  • This substrate has the advantage that high-frequency and low-frequency structures and electronic components can be integrated in a small space.
  • the substrate can simultaneously fulfill a housing function.
  • a second insulation layer is advantageously applied to the first insulation layer. Mechanical protection can thereby be improved and a further high-frequency or low-frequency structural layer can be integrated into the substrate.
  • At least one layer has at least one LTCC base material, because it provides a simple and gentle connection between the individual
  • Layers is given. It is particularly advantageous if all of them Layers consist of an LTCC base material.
  • the LTCC material comes e.g. B. Dupont "Green Tape", Heraeus KQ.
  • the high-frequency structural layer is attached to an outer surface of the substrate, because a simple and interference-free connection to an application module operated at high or high frequency, for example a frequency generator, an MMIC or a microwave antenna, can be produced in this way.
  • an application module operated at high or high frequency for example a frequency generator, an MMIC or a microwave antenna
  • the electromagnetic active connection can, for. B. by means of simple vias or waveguide.
  • the electromagnetic active connection can also be understood to mean that a high-frequency structure layer and a low-frequency structure layer are connected via a frequency generator which is fed by means of the low-frequency structure layer and which conducts the generated high-frequency signal into the high-frequency structure layer.
  • At least one flip-chip contact pad is present on the input side of a low-frequency structure layer.
  • all electrical contacts on the input side are in the form of flip-chip contact pads.
  • the flip-chip contact pads are provided for using the BGA method.
  • the substrate can be placed on the input side of a conventional SMD component.
  • the high-frequency structure layer also has flip-chip contact pads, in particular for accommodating application components. For use with maximum frequencies> 10 GHz, it is particularly advantageous if the contact pads are fine pitch contact pads.
  • the high frequency structure layer has at least one waveguide.
  • the use of a microstrip waveguide and / or a coplanar waveguide is particularly favorable.
  • Application modules can thus be attached to the high-frequency structure layer, for example by means of flip-chip technology, and at the same time can be supplied with the frequency signal by means of a waveguide.
  • a module which has the substrate described above and, on the outside of the substrate on the outside thereof, is equipped with at least one application module which is operatively connected to the high-frequency structural layer.
  • the active connection can, for example, be a direct electrical contact, e.g. be a flip-chip connection or an active connection based on a waveguide or
  • An application element can be, for example, an MMIC, a frequency generator, a microwave antenna or a microchip.
  • the application element is connected to the substrate, in particular the high-frequency structural layer, by means of flip-chip bonding, in particular by means of fine-pitch flip-chip bonding.
  • the at least one application module is in operative connection with the high-frequency structural layer by means of a waveguide.
  • the waveguide is a microstrip waveguide or a coplanar waveguide.
  • the use of an MMIC, a filter or an antenna as an application module is particularly advantageous.
  • the application module can be connected to the waveguide in particular by means of FC technology.
  • At least one application element is a frequency generator or a signal amplifier.
  • the insulation layers do not need to be suitable for high frequencies, but can be stable and simple, e.g. B. with a high layer thickness.
  • a frequency signal can be generated by the frequency generator, fed into the high-frequency structural position, and used by other application modules, eg. B. a transmitting antenna can be tapped.
  • a configuration can also be implemented, for example, in which a frequency signal is supplied from the outside, e.g. B. over the air, and then only amplified by an amplifier.
  • the substrate is particularly advantageous because it is not susceptible to interference and can be used in the maximum frequency range which is typically in the range from 10 GHz upwards.
  • the at least one application element is covered by a cover which, for example, is placed on the substrate.
  • the module is on the input side Can be set up by means of a flip-chip technology, in particular as a ball grid array (“BGA").
  • BGA ball grid array
  • a module is manufactured in such a way that at least one general application module, preferably all application modules, is bonded to the substrate by means of flip-chip technology. Finepitch flip-chip bonding is particularly advantageous in order to guarantee a high and maximum frequency connection that is not susceptible to interference.
  • the bonding can e.g. B. Thermocompression FC bonding, typically under pressure and a temperature of about 300 ° C. This process is sequential, i. H. that the application components are bonded piece by piece to the substrate.
  • FC soldering can be used.
  • the application components and the substrate have solder bumps, typically made of AuSn or PbSn).
  • the substrate is then first fitted with the application modules, the elements being fixed by means of an adhesive point. Then the module is placed in an oven, e.g. B. a reflow oven, heated so that the solder connection is made.
  • the soldering process has the advantage that the substrate and all application components are soldered simultaneously and a high throughput can thus be achieved.
  • the application modules are preferably supplied in “bare chip” form via wafers (eg made of GaAs, Si, ceramic) on blue tape. Alternatively, waffle pack, gel pack, surftape and tape & reel methods can also be used.
  • Module is bonded to an SMD component using flip-chip technology. It is particularly advantageous if this bonding can take place with standard methods, e.g. B. by means of BGA-FC bonding on an FR4 circuit board. Of course, several modules can also be applied to the SMD component. In addition, there may also be other components on the SMD component, e.g. B. a microprocessor.
  • This manufacturing process has the advantage that its high-frequency connection is established between the SMD component. Also, so many individual functions of different technology, e.g. B. modules made of Si, GaAs,
  • InP ceramics, LTCC, etc., can be combined into a functional and inexpensive component.
  • the module is applied to the SMD component by means of FC soldering. If the module has already been bonded to the substrate using FC soldering, please note that bumps with a higher melting point, e.g. B. from AuSn, are used as in the second soldering, z. B. using PbSn bumps.
  • the assembled modules can be further processed in the standard SMD manufacturing process as drop-in SMD modules.
  • a dosage form for the modules come e.g. B.
  • the SMD process can, for example, do the following: screen printing the circuit board (mostly standard circuit board made of FR4), SMD assembly of the SMD board with the modules and then reflow soldering.
  • the specified process flow in connection with the flexible module concept has the advantage that an automatable, integrated manufacturing process is created. Only the module itself is typically manufactured in a clean room, the rest, e.g. The SMD assembly, for example, takes place under a standard condition.
  • the assembly philosophy for module assembly and SMD assembly is largely the same, the main differences are in the positioning requirements. It is therefore also conceivable that the module assembly and the SMD assembly are carried out in one operation. This would further avoid costly and error-prone assembly processes.
  • the modules or components containing them such as SMD components are e.g. preferably applicable in the field of sensors (e.g. distance radar) or in communication technology (e.g. broadband wireless access, last mile)
  • sensors e.g. distance radar
  • communication technology e.g. broadband wireless access, last mile
  • FIG. 1 shows a module using a substrate
  • FIG. 2 shows another module
  • FIG. 3 shows a module
  • FIG. 4 shows an SMD printed circuit board equipped with modules
  • FIG. 5 shows a method for equipping a module
  • FIG. 6 shows a method for equipping an SMD component with modules.
  • Figure 7 shows a high-frequency device according to the prior art
  • FIG. 7 shows a sectional side view of a high-frequency component according to the prior art for an application up to approximately 2 GHz.
  • FIG. 1 shows a sectional view in side view of a module M using a substrate S.
  • a high-frequency structural layer 4 which is predominantly metallic, is applied to a first insulating layer 1 made of LTCC.
  • the function of the high-frequency structure layer 4 corresponds to that of a high-frequency network, which is therefore applied to an outer surface of the substrate S.
  • the high-frequency structure layer 4 includes several waveguides MW, z. B. micro or millimeter waveguide, each fine pitch FPK contact pads for receiving application modules AI, A2, A3 in FC technology.
  • a low-frequency structural layer 3 is applied, the contact pads FCK in standard flip-chip technology, for. B. with respect to the BGA method.
  • the low-frequency structure layer 3 has only conductor tracks, by means of which a voltage signal, typically a low-frequency voltage signal, fed in via the contact pads FCK can be passed on to an application module AI, A2, A3, e.g. B. a high voltage generator.
  • an application module AI A2, A3, e.g. B. a high voltage generator.
  • FIG. 2 shows a sectional view in side view of a module M using a substrate S.
  • the substrate S has two further insulating layers 2, 5 lying one above the other.
  • the insulation layers 1,2,5 consist of LTCC base materials (eg Dupont "Green Tape", Heraeus KQ) and are laminated together. Low-frequency structural layers 6.7 are attached between the insulating layers 1,2,5.
  • a low-frequency structure layer 6 has components B1, B2, the low-frequency structure layer 6 lying above, on the other hand, has no component, but serves to establish a connection between the plated-through holes D of the other structure layers.
  • components Bl, B2 z For example, a resistor, a capacitor, a coil or a more complex element such as an oscillating circuit, waveguide or a microelectronic circuit. This can e.g. They are used, for example, to control and / or monitor a voltage supply, or to process measured values.
  • the insulating layers 1, 2, 5 are designed as LTCC layers, because these are only present as solid ceramics after heating, and are relatively flexible beforehand.
  • structural layers can be applied to them in a simple manner, e.g. B. as a thin layer in screen printing technology.
  • the components B1, B2 of a structural layer 3, 6, 7 can also be applied in screen printing. This can be achieved, for example, by printing resistance pastes, etc.
  • Such principles of applying structures are known from thick or thin layer technology.
  • Both the high-frequency structure layer 4 and the low-frequency structure layers 3, 6, 7 can contain active and passive electrical and / or electronic components.
  • the different structural positions 3, 4, 6, 7. each perform different tasks, which may also lie in different frequency ranges.
  • a combination of low-frequency and high or ultra-high frequency functions in the substrate S has the advantage that a complete and compact unit is produced.
  • At least one outer structure layer 4 can operate in the high or maximum frequency range, while the structure layers 6, 7 located in the interior of the substrate S operate at low frequency or with direct current. If the inner structural layers 6,7 are also suitable for high frequencies, a coplanar and / or triplate structure is advantageous here. Waves, in particular microwaves and millimeter waves, can be guided via waveguides.
  • the structural layers 3, 4, 6, 7 are processed differently. From cost For this reason, it is preferable to precisely structure a high-frequency structure layer 4, for example using thin-film technology or etched thick-film technology, and to process the low-frequency structures 3, 6, 7 using a coarser structuring process, for example thick layer.
  • the module M has application modules AI, A2, A3 on the outside of the substrate S, connected to the high-frequency structure 4.
  • An application module serves as a high-frequency generator AI. It is connected via plated-through holes D to the FC contact pads FCK on the input side and, on the other hand, can conduct a generated high and maximum frequency signal through the high-frequency structural layer 4 acting as a network to the other application components A2, A3.
  • the high-frequency generator AI is connected to the high-frequency structure 4 by a waveguide MW, to which it is attached by means of fine pitch FC bumps FCB.
  • An application element A2 can of course also be connected to the high-frequency structure 4 by direct contact.
  • Typical application elements AI, A2, A3 are MMICs, discrete semiconductors, ceramic elements (filters etc.), transmitting and / or receiving antennas, high-frequency generators and amplifiers.
  • the module M also includes a cover 8, which consists of a frame and a cover.
  • a cover 8 which consists of a frame and a cover.
  • material z. B dielectric materials or metals in question. Metal has the advantage that there is no radiation. If the module M, however, contains application modules AI, A2, A3 which are radiating, for example antennas, a dielectric cover which is well penetrated by high-frequency or high-frequency technology is advantageous.
  • the FC contact pads FCK of the substrate S are arranged in such a way that they can be connected via a so-called BGA ("ball grid array").
  • BGA ball grid array
  • the substrate S or the module M can by further processing like a standard SMD attachment element ("Surface Mounted Device").
  • a BGA-LTTC module M When using a BGA-LTTC module M, it can also be advantageous if only the radio-frequency-related functions are accommodated in it. All other complex system functions can be accommodated on a base carrier holding module M (e.g. SMD-FR4 board). Such an arrangement has the advantage that a system in which such a BGA / LTTC module M is contained can be manufactured under standard conditions.
  • a base carrier holding module M e.g. SMD-FR4 board
  • the substrate S and the module M are particularly advantageous to use in high and ultra-high frequency technology, particularly in the field of sensors, e.g. B. distance radar and communication technology, e.g. B. Broadband wireless access. Use at maximum frequencies> 10 GHz, in particular greater than 20-30 GHz, is particularly advantageous.
  • a module M is placed in an oblique view.
  • Several application modules AI, ..., A4 are attached to the substrate S in FC technology and connected to one another by means of HF lines as part of the high-frequency structure 4.
  • An application module A3 is an antenna, so that this module M z. B. can be used as a radar, in particular as an FMCW radar.
  • FIG. 4 shows a sectional side view of two modules M, both of which are attached to a standard FR4 circuit board by means of standard flip-chip technology, which in turn are connected to an electrical or electronic system by means of standard SMD assembly is.
  • the two modules M can represent a transmitting and a receiving unit for a microwave radar.
  • FIG. 5 shows a manufacturing method for manufacturing a module M by equipping the substrate S with application modules AI, ..., A4.
  • a substrate S is prefabricated and z. B. stored in a magazine.
  • the substrate S is introduced into a production plant and equipped with the application modules AI, ..., A4 by means of batch processing. All application components AI, ..., A4 are preferably bonded to the substrate S by means of flip-chip technology. Because of the increased demands on connection technology in the highest frequency range> 10 GHz, especially from 30 GHz, there is a difference between application modules
  • the bonding can e.g. B. Thermocompression FC bonding, but FC soldering is preferred.
  • the application modules AI, ..., A4 and the substrate S have solder bumps, typically made of AuSn or PbSn.
  • the substrate S is then first equipped with the application modules AI, ..., A4 ("pick and place"), and then the popular module M in an oven, for. B. a reflow oven, heated so that the solder connection is made.
  • the soldering process has the advantage that the substrate S and all application modules AI, ..., A4 can be connected at the same time, and thus a high throughput can be achieved.
  • the application modules AI, ..., A4 are preferably fed in "bare chip” form over wafers (eg made of GaAs, Si, ceramic) on blue tape.
  • wafers eg made of GaAs, Si, ceramic
  • waffle pack, gel pack, surf tape and tape & reel methods can also be used.
  • the high frequency connections are typically carried out in a clean room. After the substrate S has been populated, the high-frequency module M is ready for further processing. It can now be stored outside the clean room, e.g. B. in another magazine. This manufacturing process can be used for all possible high and high frequency devices.
  • FIG. 6 shows a further production method in which at least one popular module M is processed further.
  • the module M is treated as a compact SMD application module and connected to an SMD component T with a standard SMD circuit board L.
  • the module M can of course also be bonded to another part of the SMD component T.
  • a bare FR4 SMD circuit board L is taken from a magazine and its wiring is applied by means of screen printing. Then the circuit board L is equipped with at least one popular module M, preferably by means of FC bonding, in particular FC soldering. It is particularly advantageous if this bonding takes place using standard methods, e.g. B. by means of BGA-FC bonding on an FR4 circuit board.
  • modules M happens z. B. by means of tape & reel, tray, Auer boat, surf tape etc.
  • other components typically standard SMD components, can also be applied to the SMD component T, typically using "tape & reel".
  • the connection between the modules M and the printed circuit board T is preferably made by means of reflow bonding.
  • the melting temperature T2 when soldering the standard SMD bumps e.g. from PbSn
  • the soldering temperature Tl when soldering the application modules AI, ..., A4 to the substrate S e.g. using AuSn as the material of the solder bumps.
  • modules M can also be mounted on the SMD board L be applied.
  • This manufacturing method has the advantage that a connection suitable for the highest frequency is established between the SMD component T. Also, so many individual functions of different technology, e.g. B. modules made of Si, GaAs, InP, ceramics, LTCC, etc., can be assembled into a functional and inexpensive component.
  • the method is not restricted to a specific type of module or SMD component.
  • By merging the module and SMD production it is possible to implement high and ultra-high frequency applications and low frequency applications on one component, and only to produce the necessary work steps under more stringent conditions (clean room).
  • the idea is applicable to reduce complex process steps (for high frequency applications etc.) to a minimum and to use standard process steps as extensively as possible.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

L'invention concerne un substrat (S) qui présente: au moins une première couche isolante (1); au moins une couche structurale haute fréquence (4), qui contient un réseau de répartition haute fréquence; et au moins une couche structurale basse fréquence (3), dans laquelle un signal de tension peut être injecté par le côté entrée. La couche structurale haute fréquence (4) est séparée de la couche structurale basse fréquence (3) par la couche isolante (1).
PCT/DE2001/002373 2000-06-29 2001-06-27 Substrat et module WO2002001639A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10031658.1 2000-06-29
DE10031658A DE10031658A1 (de) 2000-06-29 2000-06-29 Substrat und Modul
DE10041770A DE10041770A1 (de) 2000-08-25 2000-08-25 Substrat und Modul
DE10041770.1 2000-08-25

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Publication Number Publication Date
WO2002001639A2 true WO2002001639A2 (fr) 2002-01-03
WO2002001639A3 WO2002001639A3 (fr) 2002-06-27

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1414279A2 (fr) 2002-10-23 2004-04-28 Murata Manufacturing Co., Ltd. Module à haute fréquence et appareil de communication
EP1443561A2 (fr) * 2003-01-30 2004-08-04 Endicott Interconnect Technologies, Inc. Boítier électronique avec support laminé pour un empilage de puces et sa méthode de fabrication
EP1443811A2 (fr) * 2003-01-30 2004-08-04 Endicott Interconnect Technologies, Inc. Panneau de circuit à grande vitesse et son procédé de fabrication

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5188280A (en) * 1989-04-28 1993-02-23 Hitachi Ltd. Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
EP0961321A2 (fr) * 1998-05-29 1999-12-01 Kyocera Corporation Module pour hautes fréquences
US6008534A (en) * 1998-01-14 1999-12-28 Lsi Logic Corporation Integrated circuit package having signal traces interposed between power and ground conductors in order to form stripline transmission lines

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Publication number Priority date Publication date Assignee Title
US5188280A (en) * 1989-04-28 1993-02-23 Hitachi Ltd. Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
US6008534A (en) * 1998-01-14 1999-12-28 Lsi Logic Corporation Integrated circuit package having signal traces interposed between power and ground conductors in order to form stripline transmission lines
EP0961321A2 (fr) * 1998-05-29 1999-12-01 Kyocera Corporation Module pour hautes fréquences

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BROWN R L ET AL: "THE INTEGRATION OF PASSIVE COMPONENTS INTO MCMS USING ADVANCED LOW-TEMPERATURE COFIRED CERAMICS" , INTERNATIONAL JOURNAL OF MICROCIRCUITS AND ELECTRONIC PACKAGING, INTERNATIONAL MICROELECTRONICS & PACKAGING SOCIETY, US, VOL. 16, NR. 4, PAGE(S) 328-337 XP000408872 ISSN: 1063-1674 das ganze Dokument *
DREVON ET AL: "Mixed LF/RF MCM" , ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, 1997. PROCEEDINGS., 47TH SAN JOSE, CA, USA 18-21 MAY 1997, NEW YORK, NY, USA,IEEE, US, PAGE(S) 497-501 XP010234087 ISBN: 0-7803-3857-X das ganze Dokument *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1414279A2 (fr) 2002-10-23 2004-04-28 Murata Manufacturing Co., Ltd. Module à haute fréquence et appareil de communication
EP1443561A2 (fr) * 2003-01-30 2004-08-04 Endicott Interconnect Technologies, Inc. Boítier électronique avec support laminé pour un empilage de puces et sa méthode de fabrication
EP1443811A2 (fr) * 2003-01-30 2004-08-04 Endicott Interconnect Technologies, Inc. Panneau de circuit à grande vitesse et son procédé de fabrication
EP1443561A3 (fr) * 2003-01-30 2008-01-02 Endicott Interconnect Technologies, Inc. Boîtier électronique avec support laminé pour un empilage de puces et sa méthode de fabrication
US7665207B2 (en) 2003-01-30 2010-02-23 Endicott Interconnect Technologies, Inc. Method of making a multi-chip electronic package having laminate carrier

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