WO2001091982A1 - Procede et dispositif pour couper un lingot - Google Patents

Procede et dispositif pour couper un lingot Download PDF

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Publication number
WO2001091982A1
WO2001091982A1 PCT/US2000/018626 US0018626W WO0191982A1 WO 2001091982 A1 WO2001091982 A1 WO 2001091982A1 US 0018626 W US0018626 W US 0018626W WO 0191982 A1 WO0191982 A1 WO 0191982A1
Authority
WO
WIPO (PCT)
Prior art keywords
wire
ingot
cutting
cutting speed
slicing
Prior art date
Application number
PCT/US2000/018626
Other languages
English (en)
Inventor
Takashi Katano
Akihiro Inaba
Original Assignee
Memc Electronic Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials, Inc. filed Critical Memc Electronic Materials, Inc.
Publication of WO2001091982A1 publication Critical patent/WO2001091982A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
    • B23D57/00—Sawing machines or sawing devices not covered by one of the preceding groups B23D45/00 - B23D55/00
    • B23D57/003—Sawing machines or sawing devices working with saw wires, characterised only by constructional features of particular parts
    • B23D57/0046—Sawing machines or sawing devices working with saw wires, characterised only by constructional features of particular parts of devices for feeding, conveying or clamping work

Definitions

  • This invention relates generally to slicing a single crystal ingot into a plurality of wafers using a wire and, particularly, to improved method and apparatus for wafer slicing by reducing the incidence of wire breakage and groove skipping.
  • semiconductor wafers are produced by thinly slicing or cutting a generally cylindrical single crystal silicon ingot. After slicing, each wafer undergoes a number of processing operations to shape the wafer, reduce its thickness, remove damage caused by the slicing operation, and to create a highly reflective surface.
  • Known wafering processes include slicing an ingot into individual wafers with a cutting apparatus, such as a wire saw.
  • the wire saw uses a wire mounted on rollers for cutting the ingot.
  • the wire saw's drive mechanism moves the wire back and forth in a lengthwise direction around the rollers at an average speed of, for example, 600-900 meters per minute.
  • the saw slices the ingot in a direction normal to the ingot's longitudinal axis to produce as many as several hundred thin, disk-shaped wafers.
  • the reciprocating wire contacts the ingot while a liquid slurry containing abrasive particles (e.g., grains of silicon carbide) is supplied to the contact area between the ingot and the wire.
  • abrasive particles e.g., grains of silicon carbide
  • the saw removes silicon crystal and gradually slices the ingot.
  • the wire saw provides a gentle mechanical method useful for cutting silicon crystal, which is brittle and more likely damaged by other types of saws (e.g., conventional internal diameter saws).
  • Wire saws generally have three or four rollers that are rotatably mounted on a frame, each roller having a plurality of circumferential guide grooves for receiving segments of wire. Multiple parallel lengths of the wire extend between two of the rollers to form a wire web for slicing .the ingot into multiple wafers. The space between adjacent wires in the web generally corresponds to the thickness of one wafer before processing.
  • the frame is adjustable to change the spacing between the rollers for adjusting the tension in the wire.
  • the saw's drive mechanism includes spools for supplying and taking up the wire as it travels back and forth around the rollers.
  • the wire saw apparatus also includes an ingot support fixture for holding the silicon ingot in position for cutting.
  • the fixture is adjustable to accurately align an orientation of the crystalline structure of the ingot relative to the saw's cutting plane and has a mount to which the ingot is bonded during slicing.
  • a rack typically extends upward from the support fixture and a motor-driven pinion engages the rack for advancing and retracting the ingot.
  • the fixture is moveable in translation to bring the ingot into contact with the wire web.
  • a fluid dispensing system having a pump, tubing, and at least one nozzle, manifold, or other dispenser transports slurry from a nearby slurry container and dispenses it onto the wire web. A portion of the slurry then moves with the wire into a contact area between the wire and the ingot where the silicon crystal is cut.
  • two nozzles may be positioned on opposite sides of the ingot holder so that slurry is dispensed onto the web on both sides of the ingot, thus facilitating delivery of slurry to the cutting region for either direction of travel of the reciprocating wire.
  • Each nozzle is positioned above the wire web at close spacing and configured to dispense slurry in a generally thin, linear distribution pattern, forming a curtain or sheet of slurry.
  • the slurry curtain extends across a full width of the wire web so that slurry is delivered to every reach of wire and every slice in the ingot.
  • the cutting speed can be set at the beginning of the cutting operation to avoid these problems, it necessarily increases the cutting time and, thus, decreases throughput.
  • a method and an apparatus are desired for slicing wafers from relatively large ingots using high count grains while reducing incidents of wire breakage and groove skipping but without decreasing throughput.
  • the invention meets the above needs and overcomes the deficiencies of the prior art by providing an improved method for cutting a cylindrical workpiece such as a silicon single crystal.
  • a method and apparatus that reduce the incidence of wire malfunctions when beginning slicing of relatively large work pieces; the provision of such method and apparatus that reduce the incidence of wire malfunctions when beginning slicing using slurry having high count grains; the provision of such apparatus and method that improve throughput; and the provision of such method and apparatus that are economically feasible and commercially practical.
  • an embodiment of the present invention is directed a method of slicing an ingot of semiconductor material into wafers using a wire saw.
  • the wire saw includes a holder for supporting the ingot and a wire, movable in a forward direction and in a reverse direction, for slicing the ingot.
  • the method includes the step of feeding the holder and the wire relatively toward each other along a substantially linear feed path to force the ingot and the wire into contact during slicing.
  • the holder and wire are fed relatively toward each other at a first cutting speed for an initial interval and at a second cutting speed thereafter.
  • the first cutting speed is substantially constant and the second cutting speed is variable.
  • the method further includes providing a slurry containing abrasive particles to a contact area between the wire and the ingot during slicing.
  • a wire saw apparatus embodying aspects of the invention includes a wire movable in lengthwise forward and reverse directions for slicing an ingot of semiconductor material into wafers.
  • the saw apparatus also includes a plurality of grooved guide rollers for supporting and guiding the wire during slicing.
  • the wire is supported by the rollers in a reach between adjacent rollers.
  • the reach defines a cutting web that includes multiple generally parallel lengths of the wire for cutting multiple wafers from the ingot.
  • the apparatus includes a holder for supporting the ingot in registration with the cutting web and with a longitudinal axis of the ingot generally perpendicular to the lengths of the wire in the cutting web.
  • Yet another embodiment of the invention is directed to a method of slicing an ingot of semiconductor material into wafers using a wire saw.
  • the wire saw includes a holder for supporting the ingot and a wire, movable in a forward direction and in a reverse direction, for slicing the ingot.
  • the method includes the step of feeding the holder and the wire relatively toward each other along a substantially linear feed path to force the ingot and the wire into contact during slicing.
  • the holder and wire are fed relatively toward each other at a first cutting speed less than or equal to approximately 250 ⁇ m/min. for an initial interval and at a second cutting speed thereafter.
  • the first cutting speed is substantially constant and the second cutting speed is variable.
  • the method further includes providing a slurry containing abrasive particles to a contact area between the wire and the ingot during slicing.
  • the abrasive particles contained in the slurry have an average diameter of less or equal to approximately 8 ⁇ m.
  • the invention may comprise various other methods and apparatuses.
  • Other objects and features will be in part apparent and in part pointed out hereinafter.
  • FIGS. 1(a) to 1(c) illustrate cutting a cylindrical workpiece according to a preferred embodiment of the present invention.
  • FIG. 1(a) is a schematic diagram showing a site of a wire in cutting the cylindrical workpiece
  • FIG. 1(b) is a graph showing a correlation between cutting speed of the cylindrical workpiece and cutting time
  • FIG. 1(c) is a graph showing a correlation between secondary differentiation of cutting speed of the cylindrical workpiece and cutting time.
  • FIGS. 2(a) and 2(b) illustrate cutting a cylindrical workpiece according to a conventional method.
  • FIG. 2(a) is a schematic diagram showing a site of wire in cutting the cylindrical workpiece
  • FIG. 2(b) is a graph showing a correlation between cutting speed of the cylindrical workpiece and cutting time.
  • FIGS. 3(a) and 3(b) illustrate cutting a cylindrical workpiece according to another conventional method.
  • FIG. 3(a) is a schematic diagram showing a site in cutting the cylindrical workpiece; and
  • FIG. 2(b) is a graph showing a correlation between cutting speed of the cylindrical workpiece and cutting time.
  • FIG. 4 is a schematic view of an apparatus for cutting a cylindrical workpiece.
  • FIG. 5 is a perspective view of portions of the apparatus of FIG. 4.
  • Corresponding reference characters indicate corresponding parts throughout the drawings.
  • a single crystal ingot 1 i.e., the generally cylindrical workpiece
  • a slurry supply tube 2 sprays slurry 3 on a wire 4, which is running at a relatively high speed to cut the ingot 1 into wafers.
  • the wire saw includes a plurality of rollers 5 (see FIGS. 4 and 5) having a plurality of guide grooves 5a for arranging the wire 4 in a plurality of substantially parallel, regularly spaced lines defining a cutting web.
  • the rollers 5 preferably support wire 4 in a reach between adjacent rollers.
  • An ingot support fixture, or work bench, 6 preferably holds ingot 1 at a predetermined site using a holder, or beam, 7.
  • the wire saw begins slicing ingot 1 into wafers by reciprocating its wire 4 in a back and forth motion as wire 4 and ingot 1 feed relatively toward each other along a substantially linear feed path (i.e., the cutting direction).
  • the workbench 6 is movable for feeding ingot 1 toward wire 4, forcing the ingot and wire together during slicing.
  • FIGS. 2(a)-2(b) show cutting at a speed that is inversely proportional to the width or chord length of the cylindrical workpiece, ingot 1, at site.
  • the cutting speed is greater when the width of the portion of ingot 1 being sliced is smaller (i.e., at the beginning and ending of the cutting operation) than when the width of the portion of ingot 1 being sliced is greater (i.e., at the middle of the cutting operation).
  • the wire saw By varying cutting speed in this manner, the wire saw aims to provide a relatively uniform cutting force during cutting at all sites.
  • Another conventional cutting. method such as shown in FIGS. 3(a) and 3(b), suppresses the cutting speed in a vicinity c near the end of cutting of the cylindrical workpiece in an attempt to reduce vibrations and, thus, avoid breaking wafer(s).
  • cutting speed also known as “feed rate” refers to the relative speed at which ingot 1 moves toward wire 4 during cutting while the term “wire speed” refers to the speed at which wire 4 travels back and forth.
  • FIGS. 1(a) to 1(c) illustrate cutting ingot 1 according to a preferred embodiment of the present invention.
  • FIG. 1(a) is a schematic diagram showing a site of wire 4 in cutting ingot 1 ;
  • FIG. 1 (b) is a graph showing a correlation between cutting speed of ingot 1 and cutting time;
  • FIG. 1(c) is a graph showing a correlation between secondary differentiation of cutting speed of ingot 1 and cutting time.
  • the present invention provides for cutting at most about 40% of a cutting plane of ingot 1 while the wire saw maintains a substantially constant cutting speed.
  • the problem of breaking wire 4 is not caused when beginning to cut ingot 1 at the initial cutting speed. This reduces the likelihood that wire 4 will break or jump over a groove on the saw's main roller 5 when slurry 3 contains grains of high count (e.g., No. 1500 or higher) or when ingot 1 has a relatively large diameter (e.g., 200 mm or more).
  • the invention of FIGS. l(a)-l(c) is found to be economically excellent.
  • a main characteristic of the method of the present invention is that ingot 1 is cut at a substantially constant speed from the beginning of cutting to a predetermined time of cutting as shown in FIG. 1(b).
  • the secondary differential equation F'(t) preferably has a negative region as shown in FIG. 1(c).
  • conventional cutting methods call for the cutting speed to be inversely proportional to the chord length of a cylindrical workpiece at site.
  • l(a)-l(c) reduces the load on wire 4 caused at the moment wire 4 contacts ingot 1 in the case of using grains (e.g., fine grains having average diameter of 8 ⁇ m or less) of high count (e.g., No. 1500 or higher) or in the case of cutting a cylindrical workpiece having a relatively large diameter (e.g., 200 mm or more).
  • grains e.g., fine grains having average diameter of 8 ⁇ m or less
  • high count e.g., No. 1500 or higher
  • the present invention reduces the risk of breaking wire 4 upon cutting and the risk of having wire 4 jump over a groove on main roller 5.
  • the present invention performs the cutting operation in an economical manner because cutting speed in a portion where cutting speed becomes lowest may be increased to a certain degree so that cutting time is not extended unnecessarily.
  • beginning the cutting operation with an interval of substantially constant speed permits continued operation over the varying speed portion of the cutting time to be at a higher speed than the corresponding portion when cutting performed according to a conventional method.
  • the silicon ingot 1 (i.e., the cylindrical workpiece), having a diameter of approximately 300 mm, was subjected to cutting according to the schedule shown in FIG. 1(b) using the wire saw of FIG. 4.
  • Table I shows the cutting conditions.
  • the slurry 3 used in the Examples had an average particle diameter of approximately
  • a wire saw operating in accordance with a preferred embodiment of the.present invention suppresses breakage of wire 4 as well as reduces the likelihood that wire 4 will jump or skip out of one or more of the grooves on the saw's roller 5 when slurry 3 contains grains of high count, such as No. 1500 or higher, and/or when ingot 1 has a relatively large diameter, such as 200 mm or more, but is also economically excellent.
  • slurry 3 contains grains of high count, such as No. 1500 or higher, and/or when ingot 1 has a relatively large diameter, such as 200 mm or more, but is also economically excellent.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un procédé et un dispositif pour couper un lingot de matériau semi-conducteur en tranches en utilisant une scie à fil . Cette scie à fil comprend un support pour soutenir ce lingot et un fil mobile dans le sens de la longueur en va et vient pour couper le lingot en tranche. Le support et le fil sont amenés l'un vers l'autre à une première vitesse de coupe sensiblement constante pendant un laps de temps initial afin de faire entrer en contact le fil et le lingot pendant la coupe et ensuite à une seconde vitesse de coupe, variable. Une suspension épaisse contenant des particules abrasives est amenée jusqu'à la zone de contact entre le fil et le lingot pendant la coupe.
PCT/US2000/018626 2000-05-30 2000-07-07 Procede et dispositif pour couper un lingot WO2001091982A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000160291A JP2001334452A (ja) 2000-05-30 2000-05-30 円柱状ワークの切断方法
JP2000-160291 2000-05-30

Publications (1)

Publication Number Publication Date
WO2001091982A1 true WO2001091982A1 (fr) 2001-12-06

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Application Number Title Priority Date Filing Date
PCT/US2000/018626 WO2001091982A1 (fr) 2000-05-30 2000-07-07 Procede et dispositif pour couper un lingot

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JP (1) JP2001334452A (fr)
TW (1) TW452880B (fr)
WO (1) WO2001091982A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015020235A (ja) * 2013-07-18 2015-02-02 信越半導体株式会社 ワークの切断方法及びワイヤソー
JP2015066677A (ja) * 2013-09-26 2015-04-13 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ ワークピースから多数のウェハを同時に切り出すための方法
US9174361B2 (en) 2012-06-14 2015-11-03 Siltronic Ag Method for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece
CN113799277A (zh) * 2021-08-10 2021-12-17 威科赛乐微电子股份有限公司 一种晶体多线切割方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102283879B1 (ko) * 2021-01-14 2021-07-29 에스케이씨 주식회사 탄화규소 웨이퍼의 제조방법, 탄화규소 웨이퍼 및 웨이퍼 제조용 시스템

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02274460A (ja) * 1989-04-12 1990-11-08 Sumitomo Metal Ind Ltd ワイヤ式切断装置の切断速度制御方法およびその装置
JPH06155278A (ja) * 1992-11-25 1994-06-03 Shin Etsu Chem Co Ltd ワイヤソー切断方法
EP0791385A1 (fr) * 1996-02-21 1997-08-27 Shin-Etsu Handotai Company Limited Procédé de récupération de suspension liquide résiduaire soluble dans l'eau
EP0856388A2 (fr) * 1997-01-29 1998-08-05 Shin-Etsu Handotai Company Limited Procédé et scie à fil pour découper des pièces
JPH11188603A (ja) * 1997-12-25 1999-07-13 Tokyo Seiko Co Ltd ワイヤ式切断加工装置における被切断材の送り速度制御装置および方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02274460A (ja) * 1989-04-12 1990-11-08 Sumitomo Metal Ind Ltd ワイヤ式切断装置の切断速度制御方法およびその装置
JPH06155278A (ja) * 1992-11-25 1994-06-03 Shin Etsu Chem Co Ltd ワイヤソー切断方法
EP0791385A1 (fr) * 1996-02-21 1997-08-27 Shin-Etsu Handotai Company Limited Procédé de récupération de suspension liquide résiduaire soluble dans l'eau
EP0856388A2 (fr) * 1997-01-29 1998-08-05 Shin-Etsu Handotai Company Limited Procédé et scie à fil pour découper des pièces
JPH11188603A (ja) * 1997-12-25 1999-07-13 Tokyo Seiko Co Ltd ワイヤ式切断加工装置における被切断材の送り速度制御装置および方法

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* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 015, no. 035 (M - 1074) 28 January 1991 (1991-01-28) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 474 (M - 1668) 5 September 1994 (1994-09-05) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9174361B2 (en) 2012-06-14 2015-11-03 Siltronic Ag Method for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece
DE102012209974B4 (de) * 2012-06-14 2018-02-15 Siltronic Ag Verfahren zum gleichzeitigen Abtrennen einer Vielzahl von Scheiben von einem zylindrischen Werkstück
JP2015020235A (ja) * 2013-07-18 2015-02-02 信越半導体株式会社 ワークの切断方法及びワイヤソー
JP2015066677A (ja) * 2013-09-26 2015-04-13 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ ワークピースから多数のウェハを同時に切り出すための方法
US9333673B2 (en) 2013-09-26 2016-05-10 Siltronic Ag Method for simultaneously cutting a multiplicity of wafers from a workpiece
CN113799277A (zh) * 2021-08-10 2021-12-17 威科赛乐微电子股份有限公司 一种晶体多线切割方法
CN113799277B (zh) * 2021-08-10 2024-04-19 威科赛乐微电子股份有限公司 一种晶体多线切割方法

Also Published As

Publication number Publication date
TW452880B (en) 2001-09-01
JP2001334452A (ja) 2001-12-04

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