WO2001075948A1 - Appareil d'exposition a des faisceaux multiples a objectif a plusieurs axes, objectif a plusieurs axes de focalisation de faisceaux d'electrons, et procede de fabrication de dispositifs semi-conducteurs - Google Patents

Appareil d'exposition a des faisceaux multiples a objectif a plusieurs axes, objectif a plusieurs axes de focalisation de faisceaux d'electrons, et procede de fabrication de dispositifs semi-conducteurs Download PDF

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Publication number
WO2001075948A1
WO2001075948A1 PCT/JP2001/002282 JP0102282W WO0175948A1 WO 2001075948 A1 WO2001075948 A1 WO 2001075948A1 JP 0102282 W JP0102282 W JP 0102282W WO 0175948 A1 WO0175948 A1 WO 0175948A1
Authority
WO
WIPO (PCT)
Prior art keywords
multiaxis
electron
lens
electron lens
exposure apparatus
Prior art date
Application number
PCT/JP2001/002282
Other languages
English (en)
French (fr)
Inventor
Shinichi Hamaguchi
Takeshi Haraguchi
Hiroshi Yasuda
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to JP2001573531A priority Critical patent/JP4401614B2/ja
Publication of WO2001075948A1 publication Critical patent/WO2001075948A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
PCT/JP2001/002282 2000-04-04 2001-03-22 Appareil d'exposition a des faisceaux multiples a objectif a plusieurs axes, objectif a plusieurs axes de focalisation de faisceaux d'electrons, et procede de fabrication de dispositifs semi-conducteurs WO2001075948A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001573531A JP4401614B2 (ja) 2000-04-04 2001-03-22 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000102619 2000-04-04
JP2000-102619 2000-04-04
JP2000251885 2000-08-23
JP2000-251885 2000-08-23
JP2000-342657 2000-10-03
JP2000342657 2000-10-03

Publications (1)

Publication Number Publication Date
WO2001075948A1 true WO2001075948A1 (fr) 2001-10-11

Family

ID=27342984

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/002282 WO2001075948A1 (fr) 2000-04-04 2001-03-22 Appareil d'exposition a des faisceaux multiples a objectif a plusieurs axes, objectif a plusieurs axes de focalisation de faisceaux d'electrons, et procede de fabrication de dispositifs semi-conducteurs

Country Status (5)

Country Link
US (1) US20010028044A1 (ja)
JP (1) JP4401614B2 (ja)
KR (1) KR100465117B1 (ja)
TW (1) TW480588B (ja)
WO (1) WO2001075948A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4856073B2 (ja) * 2004-05-17 2012-01-18 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビーム露光システム
WO2014188882A1 (ja) * 2013-05-22 2014-11-27 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP2015211040A (ja) * 2014-04-25 2015-11-24 アイエムエス ナノファブリケーション アーゲー パターン切削用マルチビーム・ツール
US9607806B2 (en) 2011-05-30 2017-03-28 Mapper Lithography Ip B.V. Charged particle multi-beam apparatus including a manipulator device for manipulation of one or more charged particle beams

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075947A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille elctronique multi-axiale, une lentille electronique multi-axiale pour la focalisation de faisceaux d'electrons, et procede de fabrication de dispositif semi-conducteur
JP4601146B2 (ja) * 2000-10-03 2010-12-22 株式会社アドバンテスト 電子ビーム露光装置
JP2003203836A (ja) 2001-12-28 2003-07-18 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法
DE10237135A1 (de) * 2002-08-13 2004-02-26 Leo Elektronenmikroskopie Gmbh Teilchenoptische Vorrichtung und Verfahren zum Betrieb derselben
KR101060557B1 (ko) 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
WO2004040614A2 (en) 2002-10-30 2004-05-13 Mapper Lithography Ip B.V. Electron beam exposure system
JP4794444B2 (ja) * 2003-09-05 2011-10-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 粒子光学システム及び装置、並びに、かかるシステム及び装置用の粒子光学部品
US8368037B2 (en) * 2011-03-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods providing electron beam writing to a medium
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US8455838B2 (en) * 2011-06-29 2013-06-04 Kla-Tencor Corporation Multiple-column electron beam apparatus and methods
JP2013168396A (ja) 2012-02-14 2013-08-29 Canon Inc 静電型の荷電粒子線レンズ及び荷電粒子線装置
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN107359101B (zh) 2012-05-14 2019-07-12 Asml荷兰有限公司 带电粒子射束产生器中的高电压屏蔽和冷却
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10593509B2 (en) * 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
CN115190839A (zh) * 2019-12-31 2022-10-14 戴弗根特技术有限公司 利用电子束阵列的增材制造
EP4376048A1 (en) * 2022-11-23 2024-05-29 ASML Netherlands B.V. Charged particle optical device, assessment apparatus, method of assessing a sample

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518633A1 (en) * 1991-06-10 1992-12-16 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
JPH05275322A (ja) * 1992-01-31 1993-10-22 Fujitsu Ltd 電子ビーム装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH1187206A (ja) * 1997-09-02 1999-03-30 Canon Inc 電子ビーム露光装置及び該装置を用いたデバイス製造方法
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3238487B2 (ja) * 1991-11-14 2001-12-17 富士通株式会社 電子ビーム装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518633A1 (en) * 1991-06-10 1992-12-16 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
JPH05275322A (ja) * 1992-01-31 1993-10-22 Fujitsu Ltd 電子ビーム装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH1187206A (ja) * 1997-09-02 1999-03-30 Canon Inc 電子ビーム露光装置及び該装置を用いたデバイス製造方法
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4856073B2 (ja) * 2004-05-17 2012-01-18 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビーム露光システム
US9607806B2 (en) 2011-05-30 2017-03-28 Mapper Lithography Ip B.V. Charged particle multi-beam apparatus including a manipulator device for manipulation of one or more charged particle beams
WO2014188882A1 (ja) * 2013-05-22 2014-11-27 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP2015211040A (ja) * 2014-04-25 2015-11-24 アイエムエス ナノファブリケーション アーゲー パターン切削用マルチビーム・ツール

Also Published As

Publication number Publication date
TW480588B (en) 2002-03-21
KR20020084289A (ko) 2002-11-04
JP4401614B2 (ja) 2010-01-20
US20010028044A1 (en) 2001-10-11
KR100465117B1 (ko) 2005-01-05

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