WO2001061735A3 - Implantationsmaske für hochenergieionenimplantation - Google Patents

Implantationsmaske für hochenergieionenimplantation Download PDF

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Publication number
WO2001061735A3
WO2001061735A3 PCT/DE2001/000596 DE0100596W WO0161735A3 WO 2001061735 A3 WO2001061735 A3 WO 2001061735A3 DE 0100596 W DE0100596 W DE 0100596W WO 0161735 A3 WO0161735 A3 WO 0161735A3
Authority
WO
WIPO (PCT)
Prior art keywords
implantation
mask
high energy
energy ion
ion implantation
Prior art date
Application number
PCT/DE2001/000596
Other languages
English (en)
French (fr)
Other versions
WO2001061735A2 (de
Inventor
Volker Lehmann
Michael Rueb
Jenoe Tihanyi
Original Assignee
Infineon Technologies Ag
Volker Lehmann
Michael Rueb
Jenoe Tihanyi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Volker Lehmann, Michael Rueb, Jenoe Tihanyi filed Critical Infineon Technologies Ag
Publication of WO2001061735A2 publication Critical patent/WO2001061735A2/de
Publication of WO2001061735A3 publication Critical patent/WO2001061735A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft eine wiederverwendbare Implantationsmaske (5) aus vorzugsweise Silizium mit speziell strukturierten Gräben und Löchern (2 bzw. 3), die direkt oder im Abstand von einem Devicewafer (7) vorgesehen wird, sowie ein Verfahren zum Justieren einer Weiterbehandlungsebene auf einer Implantationsebene bei einem mit einer solchen Implantationsmaske behandelten Halbleiterwafer (7).
PCT/DE2001/000596 2000-02-15 2001-02-15 Implantationsmaske für hochenergieionenimplantation WO2001061735A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10006523.6 2000-02-15
DE2000106523 DE10006523A1 (de) 2000-02-15 2000-02-15 Implantationsmaske für Hochenergieionenimplantation

Publications (2)

Publication Number Publication Date
WO2001061735A2 WO2001061735A2 (de) 2001-08-23
WO2001061735A3 true WO2001061735A3 (de) 2002-07-18

Family

ID=7630866

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/000596 WO2001061735A2 (de) 2000-02-15 2001-02-15 Implantationsmaske für hochenergieionenimplantation

Country Status (2)

Country Link
DE (1) DE10006523A1 (de)
WO (1) WO2001061735A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10143515B4 (de) * 2001-09-05 2006-09-07 Infineon Technologies Ag Maskenanordnung für einen Abbildungsprozess, Verfahren zu deren Herstellung sowie Verfahren zum optischen Abbilden bzw. zum Herstellen eines Kompensationsbauelements
DE10314596B3 (de) * 2003-03-31 2004-11-25 Infineon Technologies Ag MOS-Kompensationstransistorbauelement und Herstellungsverfahren dafür
CN111812941B (zh) * 2019-04-11 2023-10-10 中国科学院金属研究所 一种高精度硅物理掩膜版及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021276A (en) * 1975-12-29 1977-05-03 Western Electric Company, Inc. Method of making rib-structure shadow mask for ion implantation
US4256532A (en) * 1977-07-05 1981-03-17 International Business Machines Corporation Method for making a silicon mask
US4293374A (en) * 1980-03-10 1981-10-06 International Business Machines Corporation High aspect ratio, high resolution mask fabrication
JPS58106822A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd 不純物導入方法
US4448865A (en) * 1981-10-30 1984-05-15 International Business Machines Corporation Shadow projection mask for ion implantation and ion beam lithography
WO1999040614A2 (en) * 1998-02-09 1999-08-12 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with linearly doping profile
DE19835528A1 (de) * 1998-08-06 2000-02-10 Asea Brown Boveri Verfahren zur Einstellung der Trägerlebensdauer in einem Halbleiterbauelement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2454714C3 (de) * 1974-11-19 1979-04-19 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen Maskierverfahren zur Herstellung periodischer Strukturen in einem Substrat mittels Ionenimplantation
GB2078441A (en) * 1980-06-17 1982-01-06 Westinghouse Electric Corp Forming impurity regions in semiconductor bodies by high energy ion irradiation
DE19838263C2 (de) * 1998-08-22 2003-01-30 Georg Grathwohl Verfahren zur Herstellung von porösen Keramikkörpern mit offenen Porenkanälen und mikroporöser Matrix

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021276A (en) * 1975-12-29 1977-05-03 Western Electric Company, Inc. Method of making rib-structure shadow mask for ion implantation
US4256532A (en) * 1977-07-05 1981-03-17 International Business Machines Corporation Method for making a silicon mask
US4293374A (en) * 1980-03-10 1981-10-06 International Business Machines Corporation High aspect ratio, high resolution mask fabrication
US4448865A (en) * 1981-10-30 1984-05-15 International Business Machines Corporation Shadow projection mask for ion implantation and ion beam lithography
JPS58106822A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd 不純物導入方法
WO1999040614A2 (en) * 1998-02-09 1999-08-12 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with linearly doping profile
DE19835528A1 (de) * 1998-08-06 2000-02-10 Asea Brown Boveri Verfahren zur Einstellung der Trägerlebensdauer in einem Halbleiterbauelement
US6159830A (en) * 1998-08-06 2000-12-12 Asea Brown Boveri Ag Process for adjusting the carrier lifetime in a semiconductor component

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 007, no. 214 (E - 199) 21 September 1983 (1983-09-21) *

Also Published As

Publication number Publication date
WO2001061735A2 (de) 2001-08-23
DE10006523A1 (de) 2001-08-23

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