WO2001046724A1 - Systeme pour produire des circuits optiques par gravure dans un materiau semi-conducteur - Google Patents
Systeme pour produire des circuits optiques par gravure dans un materiau semi-conducteur Download PDFInfo
- Publication number
- WO2001046724A1 WO2001046724A1 PCT/EP2000/011932 EP0011932W WO0146724A1 WO 2001046724 A1 WO2001046724 A1 WO 2001046724A1 EP 0011932 W EP0011932 W EP 0011932W WO 0146724 A1 WO0146724 A1 WO 0146724A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- doped
- etching
- semiconductor material
- channels
- optical circuits
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00993541A EP1250617A1 (fr) | 1999-12-22 | 2000-11-29 | Systeme pour produire des circuits optiques par gravure dans un materiau semi-conducteur |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1999161970 DE19961970A1 (de) | 1999-12-22 | 1999-12-22 | Anordnung zur Herstellung optischer Schaltungen durch Ätzung aus Halbleitermaterial |
DE19961970.0 | 1999-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001046724A1 true WO2001046724A1 (fr) | 2001-06-28 |
Family
ID=7933778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/011932 WO2001046724A1 (fr) | 1999-12-22 | 2000-11-29 | Systeme pour produire des circuits optiques par gravure dans un materiau semi-conducteur |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1250617A1 (fr) |
DE (1) | DE19961970A1 (fr) |
WO (1) | WO2001046724A1 (fr) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4995953A (en) * | 1989-10-30 | 1991-02-26 | Motorola, Inc. | Method of forming a semiconductor membrane using an electrochemical etch-stop |
WO1999041626A1 (fr) * | 1998-02-10 | 1999-08-19 | Infineon Technologies Ag | Structure optique et son procede de fabrication |
US5987208A (en) * | 1995-07-21 | 1999-11-16 | Siemens Aktiengesellschaft | Optical structure and method for its production |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5161059A (en) * | 1987-09-21 | 1992-11-03 | Massachusetts Institute Of Technology | High-efficiency, multilevel, diffractive optical elements |
US5342737A (en) * | 1992-04-27 | 1994-08-30 | The United States Of America As Represented By The Secretary Of The Navy | High aspect ratio metal microstructures and method for preparing the same |
US6093246A (en) * | 1995-09-08 | 2000-07-25 | Sandia Corporation | Photonic crystal devices formed by a charged-particle beam |
DE19610656A1 (de) * | 1996-03-05 | 1997-09-11 | Deutsche Telekom Ag | Optische Mehrwege-Weiche mit elektrisch einstellbaren Photonenkristallen |
-
1999
- 1999-12-22 DE DE1999161970 patent/DE19961970A1/de not_active Withdrawn
-
2000
- 2000-11-29 EP EP00993541A patent/EP1250617A1/fr not_active Withdrawn
- 2000-11-29 WO PCT/EP2000/011932 patent/WO2001046724A1/fr not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4995953A (en) * | 1989-10-30 | 1991-02-26 | Motorola, Inc. | Method of forming a semiconductor membrane using an electrochemical etch-stop |
US5987208A (en) * | 1995-07-21 | 1999-11-16 | Siemens Aktiengesellschaft | Optical structure and method for its production |
WO1999041626A1 (fr) * | 1998-02-10 | 1999-08-19 | Infineon Technologies Ag | Structure optique et son procede de fabrication |
Non-Patent Citations (2)
Title |
---|
GRUENING U ET AL: "TWO-DIMENSIONAL INFRARED PHOTONIC BAND GAP STRUCTURE BASED ON POROUS SILICON", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 66, no. 24, 12 June 1995 (1995-06-12), pages 3254 - 3256, XP002017882, ISSN: 0003-6951 * |
LEHMANN V: "The Physics of Macropore Formation in Low Doped n-Type Silicon", JOURNAL OF THE ELECTROCHEMICAL SOCIETY,US,ELECTROCHEMICAL SOCIETY,MANCHESTER,NEW HAMPSHIRE, vol. 140, no. 10, 1 October 1993 (1993-10-01), pages 2836 - 2843, XP000060466 * |
Also Published As
Publication number | Publication date |
---|---|
EP1250617A1 (fr) | 2002-10-23 |
DE19961970A1 (de) | 2001-06-28 |
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