WO2001027987A1 - Dry etching gas - Google Patents
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- WO2001027987A1 WO2001027987A1 PCT/JP2000/006593 JP0006593W WO0127987A1 WO 2001027987 A1 WO2001027987 A1 WO 2001027987A1 JP 0006593 W JP0006593 W JP 0006593W WO 0127987 A1 WO0127987 A1 WO 0127987A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Definitions
- the present invention relates to a dry etching gas.
- Japanese Patent No. 27233384 discloses that an oxide film can be formed by using tetrafluoroethylene and a CO gas or a NO gas without generating a crystal defect layer in a silicon substrate. Can be etched.
- W097 / 247500 shows that the use of tetrafluoroethylene as an etching gas reduces the sharp trench profile and the microloading.
- An object of the present invention is to provide a dry etching gas which does not have the above-mentioned problems of the prior art.
- the present inventors have predicted in advance that when tetrafluoroethylene is used as an etching gas, even if impurities in tetrafluoroethylene are minute, It has been found that it is preferable to keep the amount of difluoromethane, trifluoroethylene, hydrogen and carbon monoxide below a predetermined amount in order to minimize the effect on the device. On the other hand, it is characterized in that these disadvantages can be avoided by using high purity tetrafluoroethylene with few impurities.
- the present invention relates to a dry etching gas composed of tetrafluoroethylene having a purity of not less than 99.999% by weight, preferably having difluoromethine as an impurity of 2 ppm or less and trifluorethylene having a purity of 1 ppm or less. It relates to a dry etching gas consisting of tetrafluoroethylene with ppm or less, hydrogen with 1 ppm or less, and carbon monoxide with 1 ppm or less.
- tetrafluoroethylene is produced by the thermal decomposition of chlorodifluoromethane, and in the product after the thermal decomposition, in addition to tetrafluoroethylene, unreacted chlorodifluoromethane and hexafluoroethylene are contained. It contains many compounds such as propylene, difluoromethane, and trifluoroethylene.
- a rectification operation which is a usual separation method, can be mentioned.However, high-purity tetrafluoroethylene with a purity of 99.9% or more can be obtained. To obtain it, separation by a high number of rectification columns is required.
- tetrafluoroethylene with difluoromethane of 2 ppm or less, trifluoroethylene of 1 ppm or less, hydrogen of 1 ppm or less, and carbon monoxide of 1 ppm or less cannot be obtained by ordinary purification operations.
- High-stage rectification tower Separation is required.
- Dry etching gas of the present invention He, Ne, Ar, Xe , rare gas such as Kr; inert gas such as N 2; 0 2; CO, C0 2 oxygen compound gas such as; CF 3 I, CF 3 CF 2 I, iodine compounds such as (CF 3 ) CFI; and CH 2 F 2 , CHF 3 , CHF 3 , CF 3 CHF 2 , CHF 2 CHF 2 , CF 3 CH 2 F, CHF 2 CH 2 F, CF3CH3, CH 2 FCH 2 R CH 3 CHF 2 , CH 3 CH 2 F, CF 3 CF 2 CF 2 H, CF 3 CHFCF 3 , CHF 2 CF 2 CHF 2 , CF 3 CF 2 CH 2 F> CF 2 CHFCHF 2 , CF 3 CH 2 CF 3 , CHF 2 CF 2 CH 2 F, CF 3 CF 2 CH 3 , CF
- HFC Hydrofluorocarbon
- Rare gases such as He, Ne, Ar, Xe, and Kr can change the plasma electron temperature and electron density, and also have a dilution effect. By using such a rare gas together, it is possible to control the balance between fluorocarbon radicals and fluorocarbon ions and determine the appropriate etching conditions.
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- Engineering & Computer Science (AREA)
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Abstract
A dry etching gas comprising tetrafluoroethylene having a purity of 99.999 wt.% or higher.
Description
明細書 Specification
ドライエッチングガス Dry etching gas
技術分野 Technical field
本発明は、 ドライエッチングガスに関する。 The present invention relates to a dry etching gas.
背景技術 Background art
半導体製造用に用いられているドライエッチングガスとしては、テトラフルォロ メタン、 トリフルォロメタン、ォク夕フルォロシクロブタンなどが知られているが、 近年これら化合物は地球温暖化への寄与が大きいことが指摘されており、環境保護 の面からこれらの使用は好ましくない。 As dry etching gases used for semiconductor manufacturing, tetrafluoromethane, trifluoromethane, octylfluorocyclobutane, and the like are known.In recent years, these compounds have a large contribution to global warming. It has been pointed out that their use is not desirable in terms of environmental protection.
これらに代替するガスとして、多くのガスが評価されており、その一つとしてテ トラフルォロエチレンがあげられており （特開平 4— 1 7 0 0 2 6号公報） 、 テト ラフルォロエチレンなど分子内に少なくとも 1個の不飽和結合を有するフルォロ 力一ボン系ガスを含むエッチングガスを用いることにより、対レジスト選択性、お よび対シリコン下地選択性に優れ、しかも高速でパーティクル汚染が少ないシリコ ン化合物層のエツチングが可能となることが示されている。 Many gases have been evaluated as alternatives to these gases, and one of them is tetrafluoroethylene (Japanese Patent Application Laid-Open No. 4-170006). Use of an etching gas containing a fluorocarbon-based gas having at least one unsaturated bond in the molecule, for example, has excellent selectivity to resist and selectivity to silicon underlayer, and has high speed and low particle contamination It is shown that etching of a silicon compound layer becomes possible.
また、 特許第 2 7 2 3 3 8 4号公報には、 テトラフルォロエチレンと COガスま たは NOガスとを使用することで、 シリコン基板内に結晶欠陥層を発生させること なく酸化膜がエッチングできることが示されている。 Also, Japanese Patent No. 27233384 discloses that an oxide film can be formed by using tetrafluoroethylene and a CO gas or a NO gas without generating a crystal defect layer in a silicon substrate. Can be etched.
さらに、 W09 7 / 2 4 7 5 0にはテトラフルォロエチレンをエッチングガスと して用いるとシャープなトレンチプロファイルとマイクロローデイングが小さく なることも示されている。 In addition, W097 / 247500 shows that the use of tetrafluoroethylene as an etching gas reduces the sharp trench profile and the microloading.
また、 Μ J. RES. DEVELOP., Vol. 23, Nol，1979にはテトラフルォロエチレンの エッチング特性の評価結果が例示されている。 用であることがわかるが、テトラフルォロエチレンの純度に関しては何ら述べられ ていない。例えば、 上記の公知文献には、 テトラフルォロエチレン等の不飽和フル ォロカーボンに共存ガスとしてエチレン （特開平 4一 1 7 0 0 2 6号公報） 、 CO または NO (特許第 2 7 2 3 3 8 4号公報） 、水素、 酸素、 メチルメルカブタン（W 09 7 / 2 4 7 5 0 ) 、 C F 4 (IBM J. RES. DEVELOP.，Vol. 23, Nol,1979) など
が用いられており、テトラフルォロエチレンを高純度に精製する課題は存在しない。 本発明は、上記従来技術の問題のないドライエツチングガスを提供することを目 的とする。 Also, Μ J. RES. DEVELOP., Vol. 23, Nol, 1979 exemplifies the results of evaluating the etching characteristics of tetrafluoroethylene. However, there is no mention of the purity of tetrafluoroethylene. For example, in the above-mentioned known documents, as a coexisting gas with an unsaturated fluorocarbon such as tetrafluoroethylene, ethylene (Japanese Patent Application Laid-Open No. H4-170026), CO or NO (Japanese Patent No. 3 8 4 JP), hydrogen, oxygen, methyl Melka butane (W 09 7/2 4 7 5 0), CF 4 (IBM J. RES. DEVELOP., Vol. 23, Nol, 1979) , etc. Is used, and there is no problem of purifying tetrafluoroethylene with high purity. An object of the present invention is to provide a dry etching gas which does not have the above-mentioned problems of the prior art.
発明の開示 Disclosure of the invention
ULSI等の半導体装置に見られるように高度な微細化、 高集積化が進行するに伴 レ 、酸化シリコンなどのエッチングに用いられるドライエッチングガスに関する技 術的要求もますます厳しくなつてきている。 As semiconductor devices such as ULSI and the like have advanced in miniaturization and high integration, technical requirements for dry etching gas used for etching silicon oxide and the like have become increasingly severe.
本発明者は、上記従来技術の課題に鑑み検討を重ねた結果、エッチングガスとし てテトラフルォロエチレンを用いた場合、テトラフルォロエチレン中の不純物は微 量であっても事前に予想できない影響を与える可能性があり、特にジフルォロメタ ン、 トリフルォロエチレン、 水素及び一酸化炭素については、 デバイスへの影響を 最小限に抑える為に所定量以下にするのが好ましいことを見出した。 にあたり、不純物が少なく高純度のテトラフルォロエチレンを使用することにより これらの不都合を回避できることを特徴としている。 As a result of repeated studies in view of the above-mentioned problems of the prior art, the present inventors have predicted in advance that when tetrafluoroethylene is used as an etching gas, even if impurities in tetrafluoroethylene are minute, It has been found that it is preferable to keep the amount of difluoromethane, trifluoroethylene, hydrogen and carbon monoxide below a predetermined amount in order to minimize the effect on the device. On the other hand, it is characterized in that these disadvantages can be avoided by using high purity tetrafluoroethylene with few impurities.
本発明は、純度が 9 9 . 9 9 9重量％以上であるテトラフルォロエチレンからな るドライエッチングガスに関し、好ましくは不純物として含まれるジフルォロメ夕 ンが 2 p p m以下、 トリフルォロエチレンが 1 p p m以下、水素が 1 p p m以下、 一酸化炭素が 1 P P m以下であるテトラフルォロエチレンからなるドライエッチ ングガスに関するものである。 The present invention relates to a dry etching gas composed of tetrafluoroethylene having a purity of not less than 99.999% by weight, preferably having difluoromethine as an impurity of 2 ppm or less and trifluorethylene having a purity of 1 ppm or less. It relates to a dry etching gas consisting of tetrafluoroethylene with ppm or less, hydrogen with 1 ppm or less, and carbon monoxide with 1 ppm or less.
通常テトラフルォロエチレンはクロロジフルォロメ夕ンの熱分解により製造さ れ、熱分解後の生成物中にはテトラフルォロエチレンのほかに、未反応のクロロジ フルォロメタン、 へキサフルォロプロピレン、 ジフルォロメタン、 トリフルォロェ チレンなど多くの化合物が含まれている。これらの混合物からテトラフルォロェチ レンを分離するには、通常の分離方法である精留操作が挙げられるが、純度が 9 9. 9 9 9 %以上の高純度のテトラフルォロエチレンを得るためには、高段数の精留塔 による分離が必要となる。特に、 ジフルォロメタンが 2 p p m以下、 トリフルォロ エチレンが 1 p pm以下、水素が 1 p p m以下、一酸化炭素が 1 p pm以下である テトラフルォロエチレンは、通常の精製操作では得られず、非常に高段数の精留塔
による分離が必要となる。 Normally, tetrafluoroethylene is produced by the thermal decomposition of chlorodifluoromethane, and in the product after the thermal decomposition, in addition to tetrafluoroethylene, unreacted chlorodifluoromethane and hexafluoroethylene are contained. It contains many compounds such as propylene, difluoromethane, and trifluoroethylene. To separate tetrafluoroethylene from these mixtures, a rectification operation, which is a usual separation method, can be mentioned.However, high-purity tetrafluoroethylene with a purity of 99.9% or more can be obtained. To obtain it, separation by a high number of rectification columns is required. In particular, tetrafluoroethylene with difluoromethane of 2 ppm or less, trifluoroethylene of 1 ppm or less, hydrogen of 1 ppm or less, and carbon monoxide of 1 ppm or less cannot be obtained by ordinary purification operations. High-stage rectification tower Separation is required.
本発明のドライエッチングガスは、 He、 Ne、 Ar、 Xe、 Krなどの希ガス； N2など の不活性ガス； 02； CO, C02などの酸素化合物ガス； CF3I、 CF3CF2I、 （CF3)CFIなど のヨウ素化合物；及び CH2F2、 CHF3、 CHF3、 CF3CHF2、 CHF2CHF2、 CF3CH2F、 CHF 2CH2F、 CF3CH3, CH2FCH2R CH3CHF2、 CH3CH2F、 CF3CF2CF2H、 CF3CHFCF3、 CHF2 CF2CHF2、 CF3CF2CH2F> CF2CHFCHF2、 CF3CH2CF3、 CHF2CF2CH2F、 CF3CF2CH3、 CFDry etching gas of the present invention, He, Ne, Ar, Xe , rare gas such as Kr; inert gas such as N 2; 0 2; CO, C0 2 oxygen compound gas such as; CF 3 I, CF 3 CF 2 I, iodine compounds such as (CF 3 ) CFI; and CH 2 F 2 , CHF 3 , CHF 3 , CF 3 CHF 2 , CHF 2 CHF 2 , CF 3 CH 2 F, CHF 2 CH 2 F, CF3CH3, CH 2 FCH 2 R CH 3 CHF 2 , CH 3 CH 2 F, CF 3 CF 2 CF 2 H, CF 3 CHFCF 3 , CHF 2 CF 2 CHF 2 , CF 3 CF 2 CH 2 F> CF 2 CHFCHF 2 , CF 3 CH 2 CF 3 , CHF 2 CF 2 CH 2 F, CF 3 CF 2 CH 3 , CF
3 CH2CHF2、 CH3CF2CHF2、 CH3CHFCH3、 CF2=CHF, CHF=CHF、 CH2=CF2、 CH2=CHF、 CF3CH=CF2、 CF3CH=CH2、 CH3CF=CH2などからなる HFC(Hydrofluorocarbon)ガスか らなる群から選ばれる少なくとも 1種以上のガスをエッチングガス成分と混合し て使用しても良い。 3 CH 2 CHF 2, CH 3 CF 2 CHF 2, CH 3 CHFCH 3, CF 2 = CHF, CHF = CHF, CH 2 = CF 2, CH 2 = CHF, CF 3 CH = CF 2, CF 3 CH = CH 2. At least one gas selected from the group consisting of HFC (Hydrofluorocarbon) gas composed of CH 3 CF = CH 2 and the like may be used as a mixture with an etching gas component.
He、 Ne、 Ar、 Xe、 Krなどの希ガスは、 プラズマの電子温度、 電子密度を変化さ せることができ、 また、 希釈効果もある。 この様な希ガスを併用することにより、 フルォロカ一ボンラジカルやフルォロカーボンイオンのバランスをコントロール して、 エッチングの適正な条件を決めることができる。 Rare gases such as He, Ne, Ar, Xe, and Kr can change the plasma electron temperature and electron density, and also have a dilution effect. By using such a rare gas together, it is possible to control the balance between fluorocarbon radicals and fluorocarbon ions and determine the appropriate etching conditions.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
ドライエッチングガス中の不純物として問題となるのは水素を含有する化合物 (ジフルォロメタン、 トリフルォロエチレンなど） 、 水素、 一酸化炭素などであり、 これらのものを合計量として 0 . 0 0 1重量％未満、特に、 ジフルォロメタンが 2 p pm以下、 トリフルォロエチレンが 1 p pm以下、水素が 1 p pm以下及び一酸 化炭素が 1 p pm以下の場合には、基板上に堆積物が多く発生することはなく、微 細化の進んだ半導体装置の製造に関してもコンスタントに良好な結果を与えるこ とがでさる。 Compounds containing hydrogen (difluoromethane, trifluoroethylene, etc.), hydrogen, carbon monoxide, etc., which pose a problem as impurities in the dry etching gas, are 0.001% by weight in total. Less than 2 ppm, especially less than 2 ppm of trifluoromethane, less than 1 ppm of trifluoroethylene, less than 1 ppm of hydrogen and less than 1 ppm of carbon monoxide, a lot of deposits are generated on the substrate. It is possible to always give good results in the production of miniaturized semiconductor devices.
本発明の不純物が少ない高純度のテトラフルォロエチレンをドライエッチング ガスとして用いることにより、 不純物による悪影響なく、微細化、 高集積化の進ん だ半導体装置が安定的に生産可能となる。
By using high-purity tetrafluoroethylene having a small amount of impurities according to the present invention as a dry etching gas, it is possible to stably produce a miniaturized and highly integrated semiconductor device without adverse effects due to impurities.
Claims
1 . テトラフルォロエチレンの純度が 9 9 . 9 9 9重量％以上のテトラフルォロ エチレンからなるドライエッチングガス。 1. A dry etching gas consisting of tetrafluoroethylene with a purity of more than 99.99% by weight.
2. テトラフルォロエチレン中のジフルォロメタンが 2 p p m以下、 トリフルォ 口エチレンが 1 p p m以下、 水素が 1 p p m以下、 一酸化炭素が 1 p p m以 下である請求項 1に記載のドライエッチングガス。 2. The dry etching gas according to claim 1, wherein difluoromethane in tetrafluoroethylene is 2 ppm or less, trifluoroethylene is 1 ppm or less, hydrogen is 1 ppm or less, and carbon monoxide is 1 ppm or less.
3. さらに希ガス、 不活性ガス、 NH3、 H2、 炭化水素、 02、 酸素化合物、 ヨウ素 化合物、 HFC(Hydrofluorocarbon)及び請求項 1〜 3以外の二重結合を持つ PFC (perfluorocarbon)ガスからなる群から選ばれる少なくとも 1種を含む請求項 1に記載のドライエッチングガス。 3. Further rare gas, inert gas, NH 3, H 2, hydrocarbons, 0 2, oxygen compounds, iodine compounds, HFC (Hydrofluorocarbon) and PFC (perfluorocarbon) gases having a double bond other than claims 1-3 2. The dry etching gas according to claim 1, comprising at least one member selected from the group consisting of:
4. さらに He、 Ne、 Ar、 Xe、 Krからなる群から選ばれる希ガス、 N2からなる不 活性ガス、 ΝΗ3、 Η2、 α¾、 QF^ 、 などからなる炭化水素、4. Further He, Ne, Ar, Xe, rare gas selected from the group consisting of Kr, inert gas comprising N 2, ΝΗ 3, Η 2 , α¾, QF ^, and the like hydrocarbons,
02、 CO、 C02、（CF3)2C=0、 CF3CFOCF2、 CF3OCF3などからなる酸素化合物、 CF3I、 CF3CF2I、 （CF3)CFI、 CF2=CFIなどからなるヨウ素化合物、 CH2F2、 CHFO 2 , CO, C0 2 , (CF 3 ) 2 C = 0, CF 3 CFOCF 2 , CF 3 OCF 3 etc., oxygen compounds, CF 3 I, CF 3 CF 2 I, (CF 3 ) CFI, CF 2 = Iodine compound consisting of CFI, CH 2 F 2 , CHF
3、 CHF3、 CF3CHF2、 CHF2CHF2、 CF3CH2F、 CHF2CH2F> CF3CH3、 CH2FCH2F、 CF2=CHF、 CHF=CHF、 CH2=CF2、 CH2=CHF、 CF3CH=CF2、 CF3CH=CH2, CH3 CF=CH2などからなる HFC(Hydrofluorocarbon)及び CF2=CF2、 CF2=CFCF=CF2、 CF3CF=CFCF=CF2、 c-C5F8などからなる PFC(perfluorocarbon)ガスからなる群か ら選ばれる少なくとも 1種のガスを含む請求項 1に記載のドライエツチン グガス。
3, CHF 3 , CF 3 CHF 2 , CHF 2 CHF 2 , CF 3 CH 2 F, CHF 2 CH 2 F> CF 3 CH 3 , CH 2 FCH 2 F, CF 2 = CHF, CHF = CHF, CH 2 = HFC (Hydrofluorocarbon) composed of CF 2 , CH 2 = CHF, CF 3 CH = CF 2 , CF 3 CH = CH 2 , CH 3 CF = CH 2 and the like, CF 2 = CF 2 , CF 2 = CFCF = CF 2 , CF 3 CF = CFCF = CF 2 , cC 5 Doraietsuchin Gugasu of claim 1 consisting of a F 8 PFC (perfluorocarbon) is selected the group or al of a gas including at least one gas.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11/291548 | 1999-10-13 | ||
| JP29154899 | 1999-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2001027987A1 true WO2001027987A1 (en) | 2001-04-19 |
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ID=17770349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2000/006593 WO2001027987A1 (en) | 1999-10-13 | 2000-09-26 | Dry etching gas |
Country Status (1)
| Country | Link |
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| WO (1) | WO2001027987A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101384258B1 (en) | 2012-12-17 | 2014-04-11 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma etching method |
| JP2016197713A (en) * | 2015-04-06 | 2016-11-24 | セントラル硝子株式会社 | Dry etching gas and dry etching method |
| JP2021031491A (en) * | 2019-08-13 | 2021-03-01 | ダイキン工業株式会社 | Method for producing 1,1,2-trifluoroethylene, hexafluoro-1,3-butadiene, or 1,2-dichlorohexafluorocyclobutane |
| WO2023157442A1 (en) * | 2022-02-16 | 2023-08-24 | 株式会社レゾナック | Etching method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03223219A (en) * | 1990-01-26 | 1991-10-02 | Tokuyama Soda Co Ltd | Purification of tetrafluroethylene |
| JPH04170026A (en) * | 1990-11-02 | 1992-06-17 | Sony Corp | Dry etching |
| JPH04170027A (en) * | 1990-11-02 | 1992-06-17 | Sony Corp | Dry etching |
| JPH0513376A (en) * | 1991-06-28 | 1993-01-22 | Sharp Corp | Manufacture of semiconductor device |
-
2000
- 2000-09-26 WO PCT/JP2000/006593 patent/WO2001027987A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03223219A (en) * | 1990-01-26 | 1991-10-02 | Tokuyama Soda Co Ltd | Purification of tetrafluroethylene |
| JPH04170026A (en) * | 1990-11-02 | 1992-06-17 | Sony Corp | Dry etching |
| JPH04170027A (en) * | 1990-11-02 | 1992-06-17 | Sony Corp | Dry etching |
| JPH0513376A (en) * | 1991-06-28 | 1993-01-22 | Sharp Corp | Manufacture of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101384258B1 (en) | 2012-12-17 | 2014-04-11 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma etching method |
| JP2016197713A (en) * | 2015-04-06 | 2016-11-24 | セントラル硝子株式会社 | Dry etching gas and dry etching method |
| JP2021031491A (en) * | 2019-08-13 | 2021-03-01 | ダイキン工業株式会社 | Method for producing 1,1,2-trifluoroethylene, hexafluoro-1,3-butadiene, or 1,2-dichlorohexafluorocyclobutane |
| JP7072153B2 (en) | 2019-08-13 | 2022-05-20 | ダイキン工業株式会社 | Method for producing 1,1,2-trifluoroethylene, hexafluoro-1,3-butadiene or 1,2-dichlorohexafluorocyclobutane |
| WO2023157442A1 (en) * | 2022-02-16 | 2023-08-24 | 株式会社レゾナック | Etching method |
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