WO2001022501A1 - Composant electronique et agent de revetement - Google Patents

Composant electronique et agent de revetement Download PDF

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Publication number
WO2001022501A1
WO2001022501A1 PCT/DE2000/003290 DE0003290W WO0122501A1 WO 2001022501 A1 WO2001022501 A1 WO 2001022501A1 DE 0003290 W DE0003290 W DE 0003290W WO 0122501 A1 WO0122501 A1 WO 0122501A1
Authority
WO
WIPO (PCT)
Prior art keywords
coating agent
aqueous solution
stick layer
radiation
solder
Prior art date
Application number
PCT/DE2000/003290
Other languages
German (de)
English (en)
Inventor
Klaus Höhn
Günther Waitl
Original Assignee
Osram Opto Semiconductors Gmbh & Co. Ohg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh & Co. Ohg filed Critical Osram Opto Semiconductors Gmbh & Co. Ohg
Priority to EP00971253A priority Critical patent/EP1133800A1/fr
Priority to KR1020017006316A priority patent/KR20010107975A/ko
Priority to JP2001525774A priority patent/JP2003510818A/ja
Publication of WO2001022501A1 publication Critical patent/WO2001022501A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2081—Compound repelling a metal, e.g. solder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to an electronic component, in particular to an optoelectronic component, with a plastic housing that has at least one metallic contact surface. It also relates to a coating agent for such a component and to a method for producing such a component.
  • the object of the invention is to provide an electronic component in which the adhesion of solder residues or solder to surfaces of the component housing which are not provided for this purpose is largely prevented.
  • a surface-mountable component is to be developed that can be packaged in straps and by means of conventional pick-and-place processes of surface mounting technology (SMT technology) can be further processed.
  • SMT technology surface mounting technology
  • the plastic housing with the exception of the metallic soldering area, is coated with a non-stick solder layer.
  • the invention proposes to avoid those that occur in particular in solder baths or a wave soldering process
  • Soldering residues in the form of small solder accumulations at locations of the electrical component which are not provided for this purpose, provide a solder non-stick layer on the areas of the surface of the electrical component which are not intended for soldering, which prevents the solder from adhering.
  • solder non-stick layer consists essentially of siloxane.
  • solder non-stick layer is particularly preferably a siloxane layer based on polyether-modified dimethylpolysiloxane.
  • solder non-stick layer is preferably applied by a 0.01-5% aqueous solution and particularly preferably by a 0.01-2.5% aqueous solution. brings, which preferably contains no further solvent additives.
  • a 0.01-2.5% aqueous solution advantageously ensures that the coating is non-tacky, which is of crucial importance for the use of pick-and-place processes in surface mounting technology.
  • the solder non-stick layer is applied at room temperature.
  • the thickness of the non-stick solder layer in particular in the case of the optoelectronic transmitting and / or receiving components, is particularly preferably less than 3 ⁇ m and consequently has as far as possible no influence on the optical properties of the coated components.
  • a highly effective, homogeneous solder non-stick layer is produced, which advantageously does not use any nonvolatile solubilizers due to the special chemical structure and the use of aqueous systems.
  • a particular advantage that results from this is that environmentally friendly solvents are no longer used. Also, no droplet residues can occur due to highly volatile solubilizers, which complicate or prevent the perfect soldering of the electrical component.
  • a conventional thermal post-processing step is no longer required, which increases the yield and reduces production times. Functional impairments of the coated components do not occur.
  • the coatings obtained are also characterized by high storage stability and homogeneity, which improves the quality of the components and reduces the failure rate.
  • the invention further relates to a coating agent for reducing solder residues on surfaces not intended for soldering of an electrical see component that is to be soldered to at least one surface, wherein the coating agent is to be applied to the surfaces of the electrical component that are not intended for the soldering, the coating agent being a siloxane.
  • the coating composition consists of a polyether-modified dirnethyl polysiloxane.
  • the coating agent is advantageously dissolved in a 0.01-5% strength, particularly preferably in a 0.01-2.5% strength aqueous solution for application to a surface provided for this purpose, preferably without further solvent additions.
  • a uniform application of the coating agent is ensured without other difficult-to-evaporate solvent residues remaining.
  • a resultant advantage is that by using an aqueous solution, environmentally friendly solvents are no longer used.
  • the coating agent shows no other usual discolouration or residues on the component surface due to thermal decomposition reactions, which were caused by the previously required heat treatment to evaporate the solvents.
  • the aqueous solution is preferably applied to the whole by stamping (for example using a tampon, roller or sponge), dipping (for pulling through a dipping bath), spraying or application by microdosing with fine needles
  • the film is advantageously dried in an air stream which does not have to be at elevated temperatures.
  • the coating material also shows a low hazard potential for humans and the environment, in particular a low vapor pressure. Used coating solutions can consequently be disposed of without any problems and coated components can be used in particularly critical application areas, such as, for example, automotive applications in the interior, consumer electronics and medical areas, in particular because of the low vapor pressure.
  • Buffered coating solutions with a pH between approx. 5.0 and approx. 7.0 can advantageously be kept and used for up to three months.
  • the solder non-stick layer is advantageously very light-stable and can be further increased by adding light stabilizers and UV absorbers (for example benzophenones, benzoriazoles, sterically hindered amines with a pH preferably between 6.0 and 7.5), as a result of which the radiation and weather stability of the plastic housing is improved.
  • the coating is advantageously also suitable for optoelectronic components with intensive and / or more energy-producing radiation, eg. B. blue light and UV radiation emitting LEDs and high-performance LEDs.
  • the coating solutions are preferably on thermoplastic housings made of LCP, PBT, PET, PC, PA and / or particularly preferably on polyphthalamide with or without filler additive (such as
  • Titanium oxide, silicon oxide, aluminum oxide etc. and / or epoxy resin, silicone or acrylate casting compounds (preferably Epoxy anhydride molding materials) used.
  • the epoxy resin, silicone or acrylate casting compounds can contain diffuser materials such as calcium fluoride, barium sulfate, silicon oxide, aluminum oxide, glass spheres etc. and luminescence conversion pigments.
  • Figure 1 is a schematic sectional view of an embodiment of a soldered electrical component according to the invention with a solder non-stick layer;
  • Figure 2 is a schematic sectional view of a soldered, conventional electrical component with solder residues.
  • FIG. 1 shows a surface-mountable radiation-emitting and / or radiation-sensing optoelectronic component 1 in the soldered state.
  • the component 1 is in this case soldered to the metallic soldering areas 4 to be soldered by means of the solder 3 to the conductor tracks 8 printed on a circuit board 7.
  • the other areas 5 of the surface 2 of a plastic housing 14 of the component 1, which are not intended for soldering, are coated with a solder non-stick layer 6.
  • polyether-modified dimethylpolysiloxane according to the invention as an essential component of the solder non-stick layer 6, wetting of surfaces 5 of the plastic housing 14 with solder is largely prevented.
  • FIG. 1 Chen-mountable radiation-emitting and / or radiation-sensing optoelectronic component 1 without solder non-stick layer is shown schematically.
  • the component 1 is again shown in the soldered state.
  • the component 1 is in turn soldered to the soldering areas 4 to be soldered by means of the solder 3 to the conductor tracks 8 printed on a circuit board 7.
  • An aqueous solution of the material of the solder non-stick layer is preferably applied to the whole by stamping (for example using a tampon, roller or sponge), dipping (for pulling through a dipping bath), spraying or application by microdosing with fine needles
  • stamping for example using a tampon, roller or sponge
  • dipping for pulling through a dipping bath
  • the film is advantageously dried in an air stream which does not have to have elevated temperatures.
  • the aqueous solution of the polyether-modified dimethylpolysiloxane is composed of 0.1-5% polyethermo- dified dimethylpolysiloxane, for example BYK348 from Byk-Chemie GmbH, and deionized water together.
  • polyethermo- dified dimethylpolysiloxane for example BYK348 from Byk-Chemie GmbH
  • the solder non-stick layer preferably contains a light stabilizer and / or a UV absorber (for example benzophenones, benzoriazoles, sterically hindered amines with a pH preferably between 6.0 and 7.5), as a result of which the radiation and Weather stability of the plastic housing is improved.
  • a light stabilizer and / or a UV absorber for example benzophenones, benzoriazoles, sterically hindered amines with a pH preferably between 6.0 and 7.5

Abstract

L'invention concerne un composant électronique présentant, dans des zones prédéterminées, des régions brasées situées sur au moins une surface extérieure. Ce composant est revêtu, sur sa surface exempte de régions brasées, d'une couche empêchant l'adhérence des agents de brasage. L'invention concerne également un agent de revêtement servant à réduire la formation de résidus de brasage.
PCT/DE2000/003290 1999-09-21 2000-09-21 Composant electronique et agent de revetement WO2001022501A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP00971253A EP1133800A1 (fr) 1999-09-21 2000-09-21 Composant electronique et agent de revetement
KR1020017006316A KR20010107975A (ko) 1999-09-21 2000-09-21 전자 부품 및 코팅제
JP2001525774A JP2003510818A (ja) 1999-09-21 2000-09-21 電子構成素子および被覆剤

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19945131A DE19945131A1 (de) 1999-09-21 1999-09-21 Elektronisches Bauelement und Beschichtungs-Mittel
DE19945131.1 1999-09-21

Publications (1)

Publication Number Publication Date
WO2001022501A1 true WO2001022501A1 (fr) 2001-03-29

Family

ID=7922718

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/003290 WO2001022501A1 (fr) 1999-09-21 2000-09-21 Composant electronique et agent de revetement

Country Status (5)

Country Link
EP (1) EP1133800A1 (fr)
JP (2) JP2003510818A (fr)
KR (1) KR20010107975A (fr)
DE (1) DE19945131A1 (fr)
WO (1) WO2001022501A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003038912A2 (fr) * 2001-10-31 2003-05-08 Osram Opto Semiconductors Gmbh Composant optoelectronique
WO2014037263A1 (fr) * 2012-09-05 2014-03-13 Osram Opto Semiconductors Gmbh Boîtier pour élément optique, module, procédé de fabrication d'un boîtier et procédé de fabrication d'un module

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012217652B4 (de) 2012-09-27 2021-01-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil

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Publication number Priority date Publication date Assignee Title
JPS54135845A (en) * 1978-04-14 1979-10-22 Hodogaya Chem Co Ltd Polyphenylene sulfide resin composition
SU1152750A1 (ru) * 1983-10-27 1985-04-30 Предприятие П/Я Г-4311 Состав дл ограничени растекани припо
JPH02102594A (ja) * 1988-10-12 1990-04-16 Nec Corp 混成集積回路基板
EP0588040A2 (fr) * 1992-08-20 1994-03-23 Hewlett-Packard Company Source lumineuse et méthode pour montage de diodes électroluminescentes
EP0660403A1 (fr) * 1993-12-27 1995-06-28 Kabushiki Kaisha Toshiba Structure d'un électrode pour dispositif semi-conducteur
EP0720241A2 (fr) * 1994-12-27 1996-07-03 AT&T Corp. Structure de diode émettrice de lumière et méthode de fabrication
WO1998010920A1 (fr) * 1996-09-10 1998-03-19 Quantum Materials, Inc. Formulations contenant de la maleimide et utilisations de ces dernieres
US5784258A (en) * 1997-04-11 1998-07-21 Xerox Corporation Wiring board for supporting an array of imaging chips
JPH11168154A (ja) * 1997-08-25 1999-06-22 Motorola Inc 半導体素子および製造方法

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US4246147A (en) * 1979-06-04 1981-01-20 International Business Machines Corporation Screenable and strippable solder mask and use thereof
JPS62295958A (ja) * 1986-06-13 1987-12-23 Shin Etsu Chem Co Ltd 室温硬化性オルガノシロキサン組成物
JP3424835B2 (ja) * 1991-12-27 2003-07-07 松下電器産業株式会社 カラー固体撮像装置およびカラーフィルタ
ATE184900T1 (de) * 1996-05-23 1999-10-15 Doerken Ewald Ag Beschichtung aus einem pulverlack mit antihaft- effekt und verfahren zu seiner herstellung

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SU1152750A1 (ru) * 1983-10-27 1985-04-30 Предприятие П/Я Г-4311 Состав дл ограничени растекани припо
JPH02102594A (ja) * 1988-10-12 1990-04-16 Nec Corp 混成集積回路基板
EP0588040A2 (fr) * 1992-08-20 1994-03-23 Hewlett-Packard Company Source lumineuse et méthode pour montage de diodes électroluminescentes
EP0660403A1 (fr) * 1993-12-27 1995-06-28 Kabushiki Kaisha Toshiba Structure d'un électrode pour dispositif semi-conducteur
EP0720241A2 (fr) * 1994-12-27 1996-07-03 AT&T Corp. Structure de diode émettrice de lumière et méthode de fabrication
WO1998010920A1 (fr) * 1996-09-10 1998-03-19 Quantum Materials, Inc. Formulations contenant de la maleimide et utilisations de ces dernieres
US5784258A (en) * 1997-04-11 1998-07-21 Xerox Corporation Wiring board for supporting an array of imaging chips
JPH11168154A (ja) * 1997-08-25 1999-06-22 Motorola Inc 半導体素子および製造方法
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003038912A2 (fr) * 2001-10-31 2003-05-08 Osram Opto Semiconductors Gmbh Composant optoelectronique
WO2003038912A3 (fr) * 2001-10-31 2004-02-19 Osram Opto Semiconductors Gmbh Composant optoelectronique
CN100336233C (zh) * 2001-10-31 2007-09-05 奥斯兰姆奥普托半导体有限责任公司 光电元件
US7838357B2 (en) 2001-10-31 2010-11-23 Osram Opto Semiconductors Gmbh Optoelectronic component
WO2014037263A1 (fr) * 2012-09-05 2014-03-13 Osram Opto Semiconductors Gmbh Boîtier pour élément optique, module, procédé de fabrication d'un boîtier et procédé de fabrication d'un module

Also Published As

Publication number Publication date
DE19945131A1 (de) 2001-04-12
EP1133800A1 (fr) 2001-09-19
JP2003510818A (ja) 2003-03-18
KR20010107975A (ko) 2001-12-07
JP2005136438A (ja) 2005-05-26

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