WO2001018869A3 - Halbleiterbauelement für hohe sperrspannungen bei gleichzeitig niedrigem einschaltwiderstand und verfahren zu dessen herstellung - Google Patents
Halbleiterbauelement für hohe sperrspannungen bei gleichzeitig niedrigem einschaltwiderstand und verfahren zu dessen herstellung Download PDFInfo
- Publication number
- WO2001018869A3 WO2001018869A3 PCT/EP2000/008706 EP0008706W WO0118869A3 WO 2001018869 A3 WO2001018869 A3 WO 2001018869A3 EP 0008706 W EP0008706 W EP 0008706W WO 0118869 A3 WO0118869 A3 WO 0118869A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor element
- production
- high blocking
- voltages during
- simultaneously low
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 230000000903 blocking effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Abstract
Die Erfindung betrifft ein Halbleiterbauelement, bei dem in ein die Raumladungszone aufnehmendes Halbleitergebiet (3) des einen Leitungstyps Halbleiterbereiche (4) des anderen Leitungstyps eingelagert sind, die zur Beschleunigung des Schaltvorganges über fadenförmige Halbleiterzonen (9, 15, 18) des anderen Leitungstyps mit der Sourceelektrode verbunden sind.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/095,270 US6762455B2 (en) | 1999-09-09 | 2002-03-11 | Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19943143A DE19943143B4 (de) | 1999-09-09 | 1999-09-09 | Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung |
DE19943143.4 | 1999-09-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/095,270 Continuation US6762455B2 (en) | 1999-09-09 | 2002-03-11 | Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001018869A2 WO2001018869A2 (de) | 2001-03-15 |
WO2001018869A3 true WO2001018869A3 (de) | 2001-08-02 |
Family
ID=7921378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/008706 WO2001018869A2 (de) | 1999-09-09 | 2000-09-06 | Halbleiterbauelement für hohe sperrspannungen bei gleichzeitig niedrigem einschaltwiderstand und verfahren zu dessen herstellung |
Country Status (3)
Country | Link |
---|---|
US (1) | US6762455B2 (de) |
DE (1) | DE19943143B4 (de) |
WO (1) | WO2001018869A2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2807569B1 (fr) * | 2000-04-10 | 2004-08-27 | Centre Nat Rech Scient | Perfectionnement apportes aux diodes schottky |
DE10061528C1 (de) * | 2000-12-11 | 2002-07-25 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares Halbleiterbauelement |
DE10061529A1 (de) * | 2000-12-11 | 2002-06-27 | Infineon Technologies Ag | Feldeffekt gesteuertes Halbleiterbauelement und Verfahren |
US6465304B1 (en) * | 2001-10-04 | 2002-10-15 | General Semiconductor, Inc. | Method for fabricating a power semiconductor device having a floating island voltage sustaining layer |
US6566201B1 (en) * | 2001-12-31 | 2003-05-20 | General Semiconductor, Inc. | Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion |
US6656797B2 (en) * | 2001-12-31 | 2003-12-02 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation |
US6686244B2 (en) | 2002-03-21 | 2004-02-03 | General Semiconductor, Inc. | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step |
JP3652322B2 (ja) * | 2002-04-30 | 2005-05-25 | Necエレクトロニクス株式会社 | 縦型mosfetとその製造方法 |
US7166890B2 (en) | 2003-10-21 | 2007-01-23 | Srikant Sridevan | Superjunction device with improved ruggedness |
US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US7834376B2 (en) * | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
JP2007012858A (ja) * | 2005-06-30 | 2007-01-18 | Toshiba Corp | 半導体素子及びその製造方法 |
JP4488984B2 (ja) * | 2005-08-25 | 2010-06-23 | 株式会社東芝 | ショットキーバリアダイオード |
US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
US7659588B2 (en) * | 2006-01-26 | 2010-02-09 | Siliconix Technology C. V. | Termination for a superjunction device |
US9627552B2 (en) * | 2006-07-31 | 2017-04-18 | Vishay-Siliconix | Molybdenum barrier metal for SiC Schottky diode and process of manufacture |
DE102007018631B4 (de) * | 2007-04-19 | 2009-01-22 | Infineon Technologies Austria Ag | Halbleiterbauelement mit Kompensationszonen und Entladestrukturen für die Kompensationszonen |
DE102007020659B4 (de) * | 2007-04-30 | 2012-02-23 | Infineon Technologies Austria Ag | Halbleiterbauelement und Verfahren zur Herstellung desselben |
US7880224B2 (en) * | 2008-01-25 | 2011-02-01 | Infineon Technologies Austria Ag | Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same |
JP5606019B2 (ja) * | 2009-07-21 | 2014-10-15 | 株式会社東芝 | 電力用半導体素子およびその製造方法 |
US8680613B2 (en) | 2012-07-30 | 2014-03-25 | Alpha And Omega Semiconductor Incorporated | Termination design for high voltage device |
US8785279B2 (en) | 2012-07-30 | 2014-07-22 | Alpha And Omega Semiconductor Incorporated | High voltage field balance metal oxide field effect transistor (FBM) |
US9224852B2 (en) | 2011-08-25 | 2015-12-29 | Alpha And Omega Semiconductor Incorporated | Corner layout for high voltage semiconductor devices |
JP6135364B2 (ja) * | 2013-07-26 | 2017-05-31 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
KR101514537B1 (ko) * | 2013-08-09 | 2015-04-22 | 삼성전기주식회사 | 전력 반도체 소자 및 그 제조 방법 |
US20150118810A1 (en) * | 2013-10-24 | 2015-04-30 | Madhur Bobde | Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path |
US9985094B2 (en) * | 2013-12-27 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Super junction with an angled trench, transistor having the super junction and method of making the same |
CN104733535A (zh) * | 2015-03-17 | 2015-06-24 | 北京中科新微特科技开发股份有限公司 | 一种功率mosfet |
US10243039B2 (en) * | 2016-03-22 | 2019-03-26 | General Electric Company | Super-junction semiconductor power devices with fast switching capability |
US10600649B2 (en) * | 2017-09-21 | 2020-03-24 | General Electric Company | Systems and method for charge balanced semiconductor power devices with fast switching capability |
US11233157B2 (en) * | 2018-09-28 | 2022-01-25 | General Electric Company | Systems and methods for unipolar charge balanced semiconductor power devices |
US11316042B2 (en) * | 2020-01-31 | 2022-04-26 | Power Integrations, Inc. | Process and structure for a superjunction device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0344514A2 (de) * | 1988-05-31 | 1989-12-06 | Siemens Aktiengesellschaft | Abschaltbarer Thyristor |
DE19534154A1 (de) * | 1995-09-14 | 1997-03-20 | Siemens Ag | Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement |
WO1997029518A1 (de) * | 1996-02-05 | 1997-08-14 | Siemens Aktiengesellschaft | Durch feldeffekt steuerbares halbleiterbauelement |
DE19839970A1 (de) * | 1998-09-02 | 2000-03-16 | Siemens Ag | Randstruktur und Driftbereich für Halbleiterbauelement |
WO2000017937A2 (de) * | 1998-09-24 | 2000-03-30 | Infineon Technologies Ag | Verfahren zum herstellen eines halbleiterbauelements |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5917203A (en) * | 1996-07-29 | 1999-06-29 | Motorola, Inc. | Lateral gate vertical drift region transistor |
US6452230B1 (en) * | 1998-12-23 | 2002-09-17 | International Rectifier Corporation | High voltage mosgated device with trenches to reduce on-resistance |
-
1999
- 1999-09-09 DE DE19943143A patent/DE19943143B4/de not_active Expired - Fee Related
-
2000
- 2000-09-06 WO PCT/EP2000/008706 patent/WO2001018869A2/de active Application Filing
-
2002
- 2002-03-11 US US10/095,270 patent/US6762455B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0344514A2 (de) * | 1988-05-31 | 1989-12-06 | Siemens Aktiengesellschaft | Abschaltbarer Thyristor |
DE19534154A1 (de) * | 1995-09-14 | 1997-03-20 | Siemens Ag | Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement |
WO1997029518A1 (de) * | 1996-02-05 | 1997-08-14 | Siemens Aktiengesellschaft | Durch feldeffekt steuerbares halbleiterbauelement |
DE19839970A1 (de) * | 1998-09-02 | 2000-03-16 | Siemens Ag | Randstruktur und Driftbereich für Halbleiterbauelement |
WO2000017937A2 (de) * | 1998-09-24 | 2000-03-30 | Infineon Technologies Ag | Verfahren zum herstellen eines halbleiterbauelements |
Also Published As
Publication number | Publication date |
---|---|
US6762455B2 (en) | 2004-07-13 |
WO2001018869A2 (de) | 2001-03-15 |
US20020117715A1 (en) | 2002-08-29 |
DE19943143A1 (de) | 2001-03-22 |
DE19943143B4 (de) | 2008-04-24 |
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